JP5150314B2 - Method for manufacturing anode panel and method for forming phosphor region - Google Patents

Description

  The present invention relates to a method for manufacturing an anode panel constituting a flat display device and a method for forming a phosphor region.

  In the field of display devices used in television receivers and information terminal equipment, the flat panel type (flat panel) that can meet the demands of thinner, lighter, larger screens and higher definition than the conventional mainstream cathode ray tube (CRT). Type) display devices are rapidly moving. Examples of such a flat display device include a liquid crystal display (LCD), an electroluminescence display (ELD), a plasma display (PDP), and a cold cathode field emission display (FED: field emission display). Can do. Among these, liquid crystal display devices are widely used as display devices for information terminal equipment, but for application to stationary television receivers, there are still problems with high brightness and high-speed response. Yes. On the other hand, a cold cathode field emission display is a cold cathode field emission device (hereinafter, field emission) capable of emitting electrons from a solid into a vacuum based on the quantum tunnel effect without depending on thermal excitation. In some cases, it is called an element), and is attracting attention in terms of high brightness, high-speed response, and low power consumption.

  FIG. 6 shows a schematic partial end view of a cold cathode field emission display device (hereinafter sometimes referred to as a display device) provided with a field emission element, when the cathode panel CP and the anode panel AP are disassembled. FIG. 7 shows a schematic exploded perspective view of a part of the cathode panel CP and the anode panel AP. The field emission device shown in the figure is a so-called Spindt type field emission device having a conical electron emission portion. The field emission device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, a gate An opening 14 provided in the electrode 13 and the insulating layer 12 and a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14 are configured. In general, the cathode electrode 11 and the gate electrode 13 are each formed in a band shape in a direction in which the projected images of these two electrodes are orthogonal to each other, and an area where the projected images of these two electrodes overlap (for one subpixel). In general, a plurality of field emission elements are provided in this region (hereinafter referred to as an electron emission region EA). Further, the electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area EF (area that functions as an actual display portion) of the cathode panel CP. An interlayer insulating layer 16 is formed on the insulating layer 12, and a focusing electrode 17 is formed on the interlayer insulating layer 16.

  On the other hand, the anode panel AP includes a substrate 20, a phosphor region 22 formed on the substrate 20 and having a predetermined pattern, and an anode electrode 24 formed thereon. One sub-pixel (sub-pixel) faces a group of field emission elements provided in an overlapping area (electron emission area EA) between the cathode electrode 11 and the gate electrode 13 on the cathode panel side, and a group of these field emission elements. And the phosphor region 22 on the anode panel side. In the effective area EF, such pixels are arranged on the order of several hundred thousand to several million, for example. A light absorption layer (black matrix) 23 is formed on the substrate 20 between the phosphor region 22 and the phosphor region 22. In the figure, reference numeral 21 represents a partition, reference numeral 25 represents a spacer holding portion, reference numeral 26 represents a spacer extending in the first direction (X direction), and reference numeral 27 represents a joining member. Here, in FIG. 7, illustration of a partition and a spacer is abbreviate | omitted.

  The display device can be manufactured by arranging the anode panel AP and the cathode panel CP so that the electron emission region EA and the phosphor region 22 face each other and joining the outer peripheral portion via the joining member 27. . A through-hole (not shown) for evacuation is provided in the invalid area NF (for example, the invalid area NF of the cathode panel CP) that surrounds the effective area EF and has peripheral circuits for selecting pixels. An exhaust pipe (not shown) sealed after evacuation is connected around the through hole. That is, the space SP surrounded by the anode panel AP, the cathode panel CP, and the bonding member 27 is in a vacuum.

  The anode panel AP is usually manufactured by the following method (see, for example, Japanese Patent Application Laid-Open No. 2004-047408).

[Step-10]
First, a grid-like partition wall 21 is formed on the substrate 20 (see FIG. 10A). The partition wall 21 also functions as the spacer holding part 25. Specifically, after forming the photosensitive polyimide resin layer on the substrate 20 based on the coating method, the photosensitive polyimide resin layer is selectively removed by photolithography technique and development, and then the remaining photosensitive polyimide resin layer Is fired to form a grid-like partition wall 21 and a spacer holding portion 25. Before forming the partition walls 21, it is preferable to form a light absorption layer (black matrix) 23 made of, for example, chromium oxide on the surface of the portion of the substrate 20 where the partition walls 21 are to be formed. Specifically, a low melting point glass paste colored black with a metal oxide such as cobalt oxide is printed on the substrate 20 by a screen printing method, and then the low melting point glass paste is fired to form a lattice-like The light absorption layer 23 may be formed.

[Step-20]
Next, the phosphor region 22 is formed on the portion of the substrate 20 surrounded by the partition wall 21 (see FIG. 10B). Specifically, in order to form the red light emitting phosphor region 22R, for example, a red light emitting phosphor slurry in which red light emitting phosphor particles are dispersed in, for example, polyvinyl alcohol (PVA) resin and water and ammonium dichromate is further added. Then, the red light emitting phosphor slurry is dried. Thereafter, the portion of the red light emitting phosphor slurry in which the red light emitting phosphor region 22R is to be formed is irradiated with ultraviolet rays from the substrate side to expose the red light emitting phosphor slurry. The red light emitting phosphor slurry is gradually cured from the substrate side. The thickness of the red light-emitting phosphor region 22R to be formed is determined by the amount of ultraviolet light applied to the red light-emitting phosphor slurry. Thereafter, the red light-emitting phosphor region 22R can be formed in a predetermined region by developing the red light-emitting phosphor slurry. Hereinafter, the green light emitting phosphor region 22G is formed by performing the same process on the green light emitting phosphor slurry, and further, the blue light emitting phosphor region 22B is formed by performing the same process on the blue light emitting phosphor slurry. Form.

[Step-30]
Thereafter, a resin layer 28 (often referred to as an intermediate film) is formed on the top surface of the partition wall 21 and on the phosphor region 22 (see FIG. 10C). Specifically, the resin layer 28 can be formed based on a metal mask printing method or a screen printing method. Then, the resin layer 28 is dried.

[Step-40]
After that, an anode electrode 24 that covers the display area is formed (see FIG. 11A). Specifically, an anode electrode 24 made of aluminum (Al) is formed by various vacuum deposition methods or sputtering methods so as to cover the resin layer 28 formed on the top surface of the partition wall 21 and the phosphor region 22. To do.

[Step-50]
Next, the resin layer 28 is removed by heat treatment (see FIG. 11B). Specifically, the resin layer 28 is baked at about 400 ° C. By this firing treatment, the resin layer 28 is burned and burned out, and the anode electrode 24 made of aluminum (Al) is left on the phosphor region 22 and the partition wall 21. Through the above steps, the anode panel AP can be completed.

Japanese Patent Application Laid-Open No. 2004-047408 JP 2006-107738 A JP 2006-107775 A

  By the way, the manufacturing method of the conventional anode panel AP is a rather complicated process as described above. In addition, preparation of a dispersant in which phosphor particles are dispersed in polyvinyl alcohol (PVA) resin and water is a complicated operation, energy consumption for drying the phosphor slurry, and pure water in the development of the phosphor slurry. All of this consumption and wastewater treatment leads to an increase in the manufacturing cost of the anode panel AP. A method of forming a phosphor region by an ink jet printing method is known from, for example, Japanese Patent Application Laid-Open Nos. 2006-107738 and 2006-107775. In the methods disclosed in these patent publications, Since the phosphor region is formed by the ink jet printing method using the ink containing particles, there is a problem that the ink jet printing apparatus is easily clogged.

  Accordingly, an object of the present invention is to provide a method for manufacturing an anode panel constituting a flat display device and a method for forming a phosphor region by a very simple method.

In order to achieve the above object, a method for manufacturing an anode panel according to the first aspect of the present invention includes an anode panel in which a phosphor region and an anode electrode are provided on a substrate, and a two-dimensional matrix on a support. A method of manufacturing an anode panel in a flat panel display device in which a cathode panel having an arranged electron emission region is joined at the outer periphery, and a space sandwiched between the cathode panel and the anode panel is maintained in a vacuum. There,
(A) forming an adhesive region made of an adhesive on a portion where a phosphor region made of a plurality of phosphor particles is to be formed on the substrate so that the thickness is larger than the size of the phosphor particles ;
(B) phosphor particles in the bonding area was sprayed, then removed phosphor particles not in adhesion area,
(C) forming an anode electrode on the entire surface ;
(D) removing the bonded area by combustion;
Each step is a manufacturing method of Bei Elua node panel.

In order to achieve the above object, the phosphor region forming method according to the first aspect of the present invention includes forming a phosphor region in a flat display device having a display panel provided with at least the phosphor region on a substrate. A method,
(A) forming an adhesive region made of an adhesive on a portion where a phosphor region made of a plurality of phosphor particles is to be formed on the substrate so that the thickness is larger than the size of the phosphor particles ;
(B) Dispersing the phosphor particles in the adhesion area, and then removing the phosphor particles not in the adhesion area ;
(C) obtaining a phosphor region by removing the adhesion region;
A method for forming a phosphor region obtain Bei each step.

  A method for manufacturing an anode panel according to the first aspect of the present invention or a method for forming a phosphor region according to the first aspect of the present invention (hereinafter collectively referred to as “the method according to the first aspect of the present invention”). In the step (A) or step (a), an adhesive region made of an adhesive can be formed based on the printing method.

  In the method according to the first aspect of the present invention including the above preferred embodiment, in the step (B) or the step (b), the phosphor particles in a dry state can be dispersed over the entire surface. .

The anode panel manufacturing method according to the second aspect of the present invention for achieving the above object includes an anode panel in which a phosphor region and an anode electrode are provided on a substrate, and a two-dimensional matrix on a support. A method of manufacturing an anode panel in a flat panel display device in which a cathode panel having an arranged electron emission region is joined at the outer periphery, and a space sandwiched between the cathode panel and the anode panel is maintained in a vacuum. There,
(A) Scattering phosphor particles on the substrate ,
(B) An adhesive region made of an adhesive is formed on a portion where a phosphor region made of a plurality of phosphor particles is to be formed on the substrate so that the thickness is larger than the size of the phosphor particles. Remove phosphor particles that are not in the area ,
(C) forming an anode electrode on the entire surface ;
(D) removing the bonded area by combustion;
It is a manufacturing method of the anode panel obtaining Bei each step.

In order to achieve the above object, the phosphor region forming method according to the second aspect of the present invention includes forming a phosphor region in a flat display device having a display panel provided with at least the phosphor region on a substrate. A method,
(A) Scattering phosphor particles on the substrate ;
(B) forming an adhesive region made of an adhesive on a portion where a phosphor region made of a plurality of phosphor particles is to be formed on the substrate, and removing the phosphor particles not in the adhesive region ;
(C) obtaining a phosphor region by removing the adhesion region;
A method for forming a phosphor region obtain Bei each step.

  A method for manufacturing an anode panel according to the second aspect of the present invention or a method for forming a phosphor region according to the second aspect of the present invention (hereinafter collectively referred to as “the method according to the second aspect of the present invention”). In the step (B) or the step (b), an adhesive region made of an adhesive can be formed based on the printing method.

  In the method according to the second aspect of the present invention including the above preferred embodiment, the phosphor particles in the dry state can be dispersed in the step (A) or the step (a).

  In the method according to the first aspect or the second aspect of the present invention including the preferred embodiments and configurations described above (hereinafter, these may be collectively referred to simply as “the method of the present invention”), Suitable adhesives for use include, for example, acrylic adhesives (acrylic ester copolymers, methacrylic ester copolymers), epoxy adhesives, silicone adhesives, urethane adhesives, cyanoacrylate adhesives , Rubber adhesive [natural rubber adhesive, synthetic rubber adhesive such as isoprene rubber (IR), styrene butadiene rubber (SBR), polyisobutylene (butyl rubber, IIR), butadiene rubber (BR)], ethylene acetate Mention may be made of vinyl copolymers. The concept of adhesive includes an adhesive. In the method according to the first aspect of the present invention, from the viewpoint of preventing the adhesive from being dried after the formation of the adhesive region and before the phosphor particles are dispersed on the adhesive region, glycerin, It is preferable to add a slow-drying solvent such as triethylene glycol to the adhesive. In the above preferred form of the method of the present invention, an adhesive region made of an adhesive is formed based on a printing method. Specific printing methods include screen printing, ink jet printing, letterpress printing, and gravure printing. The law can be mentioned.

  A resin layer suitable for use in a preferred configuration in the method of the present invention is a kind of varnish in a broad sense, in which a cellulose derivative, generally a composition mainly composed of nitrocellulose, is dissolved in a volatile solvent such as a lower fatty acid ester. Or urethane lacquer, acrylic lacquer, and water-soluble acrylic emulsion using other synthetic polymers. The resin layer can be formed by, for example, a coating method or a printing method.

  In the preferred configuration of the method of the present invention, the dried phosphor particles are sprayed over the entire surface. As a specific spraying method, a so-called spray gun in which dried phosphor particles are sprayed from a nozzle with a compressed gas. , A method using a vibrating sieve, a method using a scatter method, a roller method, and a vibration type powder particle dispersion device. Specific methods for removing phosphor particles that are not in the adhesion region include a method of spraying water, a method of spraying compressed air, a method of vacuum suction, and a method of using these methods in combination.

  When removing the resin layer or the adhesion region by combustion, for example, combustion at about 400 ° C. in air can be exemplified as the combustion condition.

Although the average thickness of the phosphor region on the substrate is not limited, it is desirably 3 μm to 20 μm, preferably 5 μm to 10 μm. The phosphor particles can be appropriately selected and used from known phosphor particles. In the case of color display, phosphor particles whose color purity is close to the three primary colors specified by NTSC, the white balance when the three primary colors are mixed, the afterglow time is short, and the afterglow times of the three primary colors are almost equal. It is preferable to combine them. As the composition of the red-emitting phosphor particles constituting the red-emitting phosphor region, (Y ₂ O ₃ : Eu), (Y ₂ O ₂ S: Eu), (Y ₃ Al ₅ O ₁₂ : Eu), (Y ₂ SiO ₅ : Eu), (Zn ₃ (PO ₄ ) ₂ : Mn), and (CaAlSiN ₃ : Eu) can be exemplified, among which (Y ₂ O ₃ : Eu), (Y ₂ O ₂ S : Eu) is preferably used. The composition of the green light emitting phosphor particles constituting the green light emitting phosphor region is (ZnSiO ₂ : Mn), (Sr ₄ Si ₃ O ₈ Cl ₄ : Eu), (ZnS: Cu, Al), (ZnS). : Cu, Au, Al), [(Zn, Cd) S: Cu, Al], (Y ₃ Al ₅ O ₁₂ : Tb), (Y ₂ SiO ₅ : Tb), [Y ₃ (Al, Ga) ₅ O ₁₂ : Tb], (ZnBaO ₄ : Mn), (GbBO ₃ : Tb), (Sr ₆ SiO ₃ Cl ₃ : Eu), (BaMgAl ₁₄ O ₂₃ : Mn), (ScBO ₃ : Tb), (Zn ₂ Examples include SiO ₄ : Mn), (ZnO: Zn), (Gd ₂ O ₂ S: Tb), and (ZnGa ₂ O ₄ : Mn). Among these, (ZnS: Cu, Al), (ZnS : Cu, Au, Al), [(Zn, Cd) S: Cu, Al], (Y 3 Al 5 O 12: _{b), [Y 3 (Al} , Ga) 5 O 12: Tb], (Y 2 SiO 5: Tb) is preferably used. Furthermore, the composition of the blue light emitting phosphor particles constituting the blue light emitting phosphor region is (Y ₂ SiO ₅ : Ce), (CaWO ₄ : Pb), CaWO ₄ , YP _0.85 V _0.15 O ₄ , (BaMgAl _{14). O 23: Eu), (Sr} 2 P 2 O 7: Eu), (Sr 2 P 2 O 7: Sn), (ZnS: Ag, Al), (ZnS: Ag), ZnMgO, ZnGaO 4, (AlN: Eu) can be exemplified, and among these, (ZnS: Ag) and (ZnS: Ag, Al) are preferably used.

  The phosphor region may be composed of monochromatic phosphor particles or may be composed of three primary color phosphor particles. The arrangement pattern of the phosphor regions is, for example, a dot shape. Specifically, when the flat display device obtained by the method of the present invention (hereinafter referred to as “a flat display device based on the method of the present invention”) is a color display, the arrangement and arrangement of the phosphor regions are expressed as deltas. An array, a stripe array, a diagonal array, and a rectangle array can be exemplified. That is, one row of the phosphor regions arranged in a straight line is occupied by the row occupied by the red light emitting phosphor region, the row occupied by the green light emitting phosphor region, and the blue light emitting phosphor region. May be composed of a row in which a red light-emitting phosphor region, a green light-emitting phosphor region, and a blue light-emitting phosphor region are sequentially arranged. Here, the phosphor region is defined as a region of a phosphor that generates one bright spot on the anode panel (or display panel). One pixel (one pixel) is composed of a set of one red light emitting phosphor region, one green light emitting phosphor region, and one blue light emitting phosphor region, and one subpixel is one phosphor. The region is composed of one red light emitting phosphor region, one green light emitting phosphor region, or one blue light emitting phosphor region. A gap between adjacent phosphor regions may be filled with a light absorption layer (black matrix) for the purpose of improving contrast.

  In the method of the present invention, the step (A) and the step (B), or the step (a) and the step (b) may be performed only once or may be repeated a plurality of times. . When performing a plurality of repetitions, different phosphor regions can be formed in order to form a plurality of repetitions in order, and the same phosphor can be used to increase the thickness of the phosphor region. It may be configured to execute a plurality of repetitions in a region, or may be configured to combine these configurations. Further, when the flat display device based on the method of the present invention is a color display, the steps (A) and (B), or the steps (a) and (b) are provided in order to provide a red light emitting phosphor region. The process (A) and the process (B), or the process (a) and the process (b) are performed in order to provide the green light emitting phosphor region by performing the process only once or repeatedly by a plurality of times. The process (A) and the process (B), or the process (a) and the process (b) are performed only once in order to perform the process only once or repeatedly and repeatedly to provide the blue light emitting phosphor region. It may be executed or repeated several times. In some cases, a surface active agent or the like is previously applied to the portion of the substrate where the phosphor region is to be formed so that the adhesive is not applied to an undesired portion of the substrate. You may control the wettability of the adhesive at the time of forming.

  A flat display device obtained based on the method for manufacturing an anode panel according to the first or second aspect of the present invention (hereinafter referred to as “a flat display device based on a method for manufacturing an anode panel of the present invention”). In this case, an anode panel in which a phosphor region and an anode electrode are provided on a substrate, and a cathode panel having electron emission regions arranged in a two-dimensional matrix on a support are joined at the outer periphery. The space between the cathode panel and the anode panel is maintained in a vacuum. Here, in the flat display device based on the method for manufacturing an anode panel of the present invention, a cold cathode field emission device (hereinafter abbreviated as a field emission device) is used as an electron emission device constituting the electron emission region. A metal / insulating film / metal element (MIM element) and a surface conduction electron-emitting element can be mentioned. In addition, as a flat display device based on the method for manufacturing an anode panel of the present invention, a flat display device (cold cathode field electron emission display device) provided with a cold cathode field electron emission device, and a flat display device incorporating an MIM element. Examples thereof include a flat panel display device incorporating a device and a surface conduction electron-emitting device. On the other hand, examples of the flat display device based on the method of the present invention include a flat display device such as a plasma display device and a fluorescent display tube (VFD) in addition to the flat display device described above.

  In the flat display device based on the method of the present invention, when the number of pixels is M × N, specifically, VGA (640, 480), S-VGA (800, 600), XGA (1024, 768), APRC (1152,900), S-XGA (1280,1024), U-XGA (1600,1200), HD-TV (1920,1080), Q-XGA (2048,1536), (1920,1035) , (720, 480), (1280, 960), and the like, some of the image display resolutions can be exemplified, but are not limited to these values.

In the flat display device based on the method of the present invention, the support constituting the cathode panel, or the substrate constituting the anode panel (or display panel), is composed of an insulating member on the surfaces facing each other. And a glass substrate, a glass substrate with an insulating coating formed on the surface, a quartz substrate, a quartz substrate with an insulating coating formed on the surface, and a semiconductor substrate with an insulating coating formed on the surface, From the viewpoint of reducing the manufacturing cost, it is preferable to use a glass substrate or a glass substrate having an insulating film formed on the surface. As glass substrates, high strain point glass, low alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite (2MgO · SiO ₂₎ ), Lead glass (Na ₂ O · PbO · SiO ₂ ), and alkali-free glass.

  In the cathode panel constituting the flat display device based on the method for manufacturing an anode panel of the present invention, the electron emission regions are arranged in a two-dimensional matrix, but the first direction in which the electron emission regions are arranged ( The projection image in the X direction and the projection image in the second direction (Y direction) are orthogonal, that is, the first direction and the second direction are orthogonal. It is preferable from the viewpoint of simplification. Alternatively, in the cathode panel, the projected image of the cathode electrode and the projected image of the gate electrode are preferably orthogonal from the viewpoint of simplifying the structure of the cold cathode field emission display. Here, for example, the gate electrode may extend in the first direction (X direction), and the cathode electrode may extend in the second direction (Y direction).

When the flat display device based on the method for manufacturing an anode panel of the present invention is a cold cathode field electron emission display device including a cold cathode field electron emission device (abbreviated as a field emission device),
(A) a strip-shaped cathode electrode formed on a support;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a strip-shaped gate electrode formed on the insulating layer;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping region where the cathode electrode and the gate electrode overlap, and an exposed portion of the cathode electrode at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening, the electron emission being controlled by application of a voltage to the cathode electrode and the gate electrode;
Consists of.

  The type of the field emission device is not particularly limited, and a Spindt-type field emission device (a field emission device in which a conical electron emission portion is provided on the cathode electrode positioned at the bottom of the opening) or a flat type field emission device An element (a field emission element in which a substantially planar electron emission portion is provided on a cathode electrode positioned at the bottom of an opening) can be given. In the cathode panel, an overlapping region where the gate electrode and the cathode electrode overlap constitutes an electron emission region, and the electron emission region is arranged in a two-dimensional matrix in the effective region of the cathode panel. Each electron emission region is provided with one or a plurality of field emission elements.

  In a cold cathode field emission display, when a display is activated, a strong electric field generated by a voltage applied to the gate electrode and the cathode electrode is applied to the electron emission portion. As a result, electrons are emitted from the electron emission portion by the quantum tunnel effect. Is done. The electrons are attracted to the anode panel by the anode electrode provided on the anode panel, and collide with the phosphor region. As a result of the collision of electrons with the phosphor region, the phosphor region emits light and can be recognized as an image.

  Here, the effective area is a central display area that performs a display function that is a practical function as a flat display device, and the ineffective area is located outside the effective area, and the effective area is framed. Besieged.

In the cold cathode field emission display, the cathode electrode is connected to the cathode electrode control circuit, the gate electrode is connected to the gate electrode control circuit, and the anode electrode is connected to the anode electrode control circuit. Note that these control circuits can be constituted by known circuits. During display operation, the voltage (anode voltage) V _A applied to the anode electrode from the anode electrode control circuit is normally constant, and can be set to, for example, 5 to 15 kilovolts. Alternatively, when the distance between the anode panel and the cathode panel is d ₀ (where 0.5 mm ≦ d ₀ ≦ 10 mm), the value of V _A / d ₀ (unit: kilovolt / mm) is 0. It is desirable to satisfy 5 or more and 20 or less, preferably 1 or more and 10 or less, and more preferably 4 or more and 8 or less. At the time of display operation of the cold cathode field emission display device, for example, with respect to the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode, a voltage modulation method or a pulse width modulation method is adopted as a gradation control method. be able to.

A field emission device can be generally manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an insulating layer on the entire surface (on the support and the cathode electrode);
(3) forming a gate electrode on the insulating layer;
(4) forming an opening in a portion of the gate electrode and the insulating layer in a region where the cathode electrode and the gate electrode overlap, and exposing the cathode electrode at the bottom of the opening;
(5) A step of forming an electron emission portion on the cathode electrode located at the bottom of the opening.

Alternatively, the field emission device can be manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an electron emission portion on the cathode electrode;
(3) forming an insulating layer on the entire surface (on the support and the electron emission portion or on the support, the cathode electrode and the electron emission portion);
(4) forming a gate electrode on the insulating layer;
(5) A step of forming an opening in a portion of the gate electrode and the insulating layer in the overlapping region of the cathode electrode and the gate electrode, and exposing the electron emission portion at the bottom of the opening.

  In the flat display device based on the method for manufacturing an anode panel of the present invention, when a focusing electrode (focus electrode) is provided, an interlayer insulating layer is further provided on the gate electrode and the insulating layer, and the interlayer insulating layer is provided on the interlayer insulating layer. A structure in which a focusing electrode is provided or a structure in which a focusing electrode is provided above the gate electrode can be employed. Here, the focusing electrode is an electrode for converging the trajectory of emitted electrons that are emitted from the opening and directed toward the anode electrode, thereby improving the luminance and preventing optical crosstalk between adjacent pixels. It is. In a so-called high voltage type cold cathode field emission display, the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts or more and the distance between the anode electrode and the cathode electrode is relatively long. The electrode is particularly effective. A relatively negative voltage (for example, 0 volts) is applied to the focusing electrode from the focusing electrode control circuit. The focusing electrode does not necessarily have to be individually formed so as to surround each of the electron emission portion or the electron emission region provided in the overlapping region where the cathode electrode and the gate electrode overlap, for example, the electron emission portion or The electron emission regions may be extended along a predetermined arrangement direction, or the electron emission portion or the electron emission region may be surrounded by a single convergence electrode (that is, the convergence electrode may be formed in the entire effective region). In this case, a single sheet-like structure covering the plurality of electron emission portions or electron emission regions can be provided with a common convergence effect. Note that an opening (third opening) is provided in the focusing electrode and the interlayer insulating layer.

As constituent materials of the cathode electrode, the gate electrode, and the focusing electrode, chromium (Cr), aluminum (Al), tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), copper (Cu), gold ( Various metals including metals such as Au), silver (Ag), titanium (Ti), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn); Alloys (for example, MoW) or compounds (for example, TiW; nitrides such as TiN and WN; silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , and TaSi ₂ ); semiconductors such as silicon (Si); Examples thereof include carbon thin films such as diamond; conductive metal oxides such as ITO (indium oxide-tin), indium oxide, and zinc oxide. The gate electrode, the cathode electrode, and the focusing electrode can have a single layer structure or a stacked structure of these materials. In addition, as a method for forming these electrodes, for example, various physical vapor deposition methods (PVD methods) including vacuum deposition methods such as electron beam deposition method and hot filament deposition method, sputtering methods, ion plating methods, and laser ablation methods. Various chemical vapor deposition methods (CVD method); various printing methods including screen printing method, ink jet printing method, metal mask printing method; plating method (electroplating method and electroless plating method); lift-off method; sol-gel The method etc. can be mentioned, The combination of these methods and an etching method can also be mentioned. Here, by appropriately selecting the formation method, it is possible to directly form a patterned strip-shaped cathode electrode, gate electrode, and focusing electrode.

  In the Spindt-type field emission device, the material constituting the electron emission portion is molybdenum, molybdenum alloy, tungsten, tungsten alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and And at least one material selected from the group consisting of silicon (polysilicon and amorphous silicon) containing impurities. The electron emission portion of the Spindt-type field emission device can be formed by various PVD methods such as a sputtering method and a vacuum deposition method, and various CVD methods.

In the flat field emission device, it is preferable that the material constituting the electron emission portion is composed of a material having a work function Φ smaller than that of the material constituting the cathode electrode. What is necessary is just to determine based on the work function of the material which comprises a cathode electrode, the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emission electron current density requested | required, etc. Alternatively, the material constituting the electron emission portion may be appropriately selected from materials in which the secondary electron gain δ of the material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. Good. In the flat type field emission device, carbon, more specifically, amorphous diamond or graphite, a carbon nanotube structure (carbon nanotube and / or graphite nanofiber), as a particularly preferable constituent material of the electron emission portion, Examples thereof include ZnO whiskers, MgO whiskers, SnO ₂ whiskers, MnO whiskers, Y ₂ O ₃ whiskers, NiO whiskers, ITO whiskers, In ₂ O ₃ whiskers, and Al ₂ O ₃ whiskers. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

  Planar shape of the first opening (opening formed in the gate electrode) or the second opening (opening formed in the insulating layer) (shape when the opening is cut in a virtual plane parallel to the support surface) ) Can be any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, a rounded polygon. The formation of the first opening can be performed by, for example, anisotropic etching, isotropic etching, a combination of anisotropic etching and isotropic etching, or, depending on the method of forming the gate electrode, The first opening can also be formed directly. The second opening can also be formed by, for example, anisotropic etching, isotropic etching, or a combination of anisotropic etching and isotropic etching. The formation of the third opening provided in the focusing electrode and the interlayer insulating layer can be performed in the same manner.

  In the field emission device, depending on the structure of the field emission device, one electron emission portion may exist in one opening, or a plurality of electron emission portions may exist in one opening. In addition, a plurality of first openings are provided in the gate electrode, one second opening communicating with the first opening is provided in the insulating layer, and one or more are provided in one second opening provided in the insulating layer. There may be an electron emission portion.

In the field emission device, a resistor thin film may be formed between the cathode electrode and the electron emission portion. By forming the resistor thin film, the operation of the field emission device can be stabilized, the electron emission characteristics can be made uniform, and the leakage current between the cathode electrode and the gate electrode can be suppressed. Materials constituting the resistor thin film include carbon-based resistor materials such as silicon carbide (SiC) and SiCN, semiconductor resistor materials such as SiN and amorphous silicon, and high melting points such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride. Examples thereof include metal oxides and refractory metal nitrides. Examples of the method for forming the resistor thin film include various printing methods such as a sputtering method, a CVD method, and a screen printing method. The electric resistance value per one electron emitting portion may be about 1 × 10 ⁵ to 1 × 10 ¹¹ Ω, preferably several MΩ to several tens of gigaΩ.

Insulating layer, as a constituent material of the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; polyimide These insulating resins can be used alone or in appropriate combination. For forming the insulating layer and the interlayer insulating layer, known processes such as various printing methods such as various CVD methods, coating methods, sputtering methods, and screen printing methods can be used.

The anode electrode may be composed of one anode electrode as a whole, or may be composed of a plurality of anode electrode units. In the latter case, it is preferable that the anode electrode unit and the anode electrode unit are electrically connected by an anode electrode resistor layer. The material constituting the anode resistor layer is a carbon-based material such as carbon, silicon carbide (SiC), SiCN; SiN-based material; ruthenium oxide (RuO ₂ ), tantalum oxide, tantalum nitride, chromium oxide, titanium oxide, etc. Examples thereof include melting point metal oxides and high melting point metal nitrides; semiconductor materials such as amorphous silicon; ITO. It is also possible to realize a stable desired sheet resistance value by combining a plurality of films such as laminating a carbon thin film having a low resistance value on the SiC resistance film. Examples of the sheet resistance value of the anode electrode resistor layer include 1 × 10 ⁻¹ Ω / □ to 1 × 10 ¹⁰ Ω / □, preferably 1 × 10 ³ Ω / □ to 1 × 10 ⁸ Ω / □. it can. The number of anode electrode units [UN] may be two or more. For example, when the total number of phosphor regions arranged in a straight line is [un], [UN] = [un], or , [Un] = u · [UN] (u is an integer of 2 or more, preferably 10 ≦ u ≦ 100, more preferably 20 ≦ u ≦ 50), or spacers arranged at a constant interval. The number of pixels can be a number obtained by adding 1, or the number of pixels or the number of subpixels can be matched, or the number of pixels or the number of subpixels can be an integer. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may vary depending on the position of the anode electrode unit. An anode electrode resistor layer may be formed on one anode electrode as a whole. As described above, if the anode electrode is divided into anode electrode units having a smaller area, instead of being formed over almost the entire effective area, the static electricity between the anode electrode unit and the electron emission area is formed. The electric capacity can be reduced. As a result, the occurrence of discharge can be reduced, and the occurrence of damage to the anode electrode and the electron emission region due to the discharge can be effectively reduced.

  When the anode electrode is composed of an anode electrode unit and a partition wall (described later) is formed, the anode electrode unit may be formed so as to extend from each phosphor region to the partition wall side surface. it can. The anode electrode unit may be formed from each phosphor region to the middle of the side wall of the partition wall.

The anode electrode (including the anode electrode unit) may be formed using a conductive material layer. As a method for forming the conductive material layer, for example, vacuum deposition methods such as electron beam deposition method and hot filament deposition method, various PVD methods such as sputtering method, ion plating method and laser ablation method; various CVD methods; various methods including screen printing method Examples thereof include printing method; metal mask printing method; lift-off method; sol-gel method. That is, a conductive material layer is formed, and based on lithography technology and etching technology, this conductive material layer can be patterned to form an anode electrode. Alternatively, the anode electrode can be obtained by forming a conductive material based on various PVD methods or various printing methods through a mask or screen having an anode electrode pattern. The anode electrode resistor layer can also be formed by the same or similar method as the anode electrode. That is, an anode electrode resistor layer may be formed from a resistor material, and the anode electrode resistor layer may be patterned based on a lithography technique and an etching technique, or a mask or a screen having an anode electrode resistor layer pattern. The anode electrode resistor layer can be obtained by forming the resistor material through various PVD methods and various printing methods. 3 × 10 ⁻⁸ m (30 nm) to 1 as the average thickness of the anode electrode on the substrate (or above the substrate) (when the partition is provided as described later, the average thickness of the anode electrode on the top surface of the partition) Examples include x10 ⁻⁶ m (1 μm), preferably 5 × 10 ⁻⁸ m (50 nm) to 5 × 10 ⁻⁷ m (0.5 μm).

As the constituent material of the anode electrode, aluminum (Al), molybdenum (Mo), chromium (Cr), tungsten (W), niobium (Nb), tantalum (Ta), gold (Au), silver (Ag), titanium (Ti ), Cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi _2, etc.); silicon (Si), semiconductors; diamond, graphite and other carbon thin films; ITO (indium oxide-tin), indium oxide, zinc oxide, etc., conductive metal oxides Can be illustrated. When the anode electrode resistor layer is formed, the anode electrode is preferably made of a conductive material that does not change the electric resistance value of the anode electrode resistor layer. For example, the anode electrode resistor layer is made of silicon carbide (SiC). When comprised, it is preferable to comprise an anode electrode from molybdenum (Mo) or aluminum (Al). A metal back film may be formed on the anode electrode. The metal back film can also serve as the anode electrode.

  It is preferable from the viewpoint of improving the contrast of the display image that the light absorption layer that absorbs light from the phosphor region is formed between adjacent phosphor regions or between a partition wall and a substrate described later. Here, the light absorption layer functions as a so-called black matrix. As a material constituting the light absorption layer, it is preferable to select a material that absorbs 90% or more of light from the phosphor region. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. The light absorption layer depends on the material used, for example, a combination of a vacuum deposition method, a sputtering method and an etching method, a combination of a vacuum deposition method, a sputtering method, a spin coating method and a lift-off method, various printing methods, a lithography technique, etc. Thus, it can be formed by a method selected as appropriate.

  In order to prevent an electron recoiled from the phosphor region or a secondary electron emitted from the phosphor region from entering another phosphor region, so-called optical crosstalk (color turbidity) is generated. It is preferable to provide a partition wall. Examples of the partition wall forming method include a screen printing method, a dry film method, a photosensitive method, a casting method, and a sandblast forming method. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where a partition is to be formed, and the partition forming material on the screen is passed through the opening using a squeegee, and the partition is formed on the substrate. In this method, after the formation material layer is formed, the partition wall formation material layer is fired. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition wall is to be formed by exposure and development, embedding the partition wall forming material in the opening generated by the removal, and baking. . The photosensitive film is burned and removed by baking, and the partition wall-forming material embedded in the openings remains to form partition walls. The photosensitive method is a method in which a barrier rib-forming material layer having photosensitivity is formed on a substrate, the barrier rib-forming material layer is patterned by exposure and development, and then fired (cured). The casting method (embossing molding method) refers to a method for forming a partition wall forming material layer by extruding a partition wall forming material layer made of a paste-like organic material or inorganic material onto a substrate from a mold (cast). In this method, the partition wall forming material layer is fired. The sand blast forming method is, for example, a method for forming a partition wall forming material layer on a substrate using a screen printing method, a metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. In this method, the portion of the partition wall forming material layer to be formed is covered with a mask layer, and then the exposed portion of the partition wall forming material layer is removed by sandblasting. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall. Further, a part of the partition may function as a spacer holding portion.

  As a planar shape of the part surrounding the phosphor region in the partition wall (corresponding to the inner contour line of the projected image of the partition wall side surface and a kind of opening region), a rectangular shape, a circular shape, an elliptical shape, an oval shape, a triangular shape, Examples include pentagonal or more polygonal shapes, rounded triangular shapes, rounded rectangular shapes, rounded polygons, etc., and linear shapes extending parallel to two sides of the phosphor region (Rod-like shape). By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a lattice-like partition is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

Examples of the partition wall forming material include photosensitive polyimide resin, lead glass colored with a metal oxide such as cobalt oxide, SiO ₂ , and a low melting point glass paste. A protective layer (for example, made of SiO ₂ , SiON, or AlN) is provided on the surface (top surface and side surface) of the partition wall to prevent an electron beam from colliding with the partition wall and releasing gas from the partition wall. It may be formed.

The cathode panel and the anode panel are joined at the outer periphery, but the joining may be performed using an adhesive layer as a joining member, or a rod-like or frame-like (frame-like) insulation such as glass or ceramics. You may carry out using the joining member which consists of the frame body comprised from material and an adhesive layer. When using a joining member consisting of a frame and an adhesive layer, the height of the frame is appropriately selected, so that the cathode panel and the anode panel are compared with the case where a joining member consisting only of the adhesive layer is used. It is possible to set the facing distance between the longer. The material constituting the adhesive layer is generally a frit glass such as B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass, but has a melting point of about 120 to 400 ° C. These so-called low melting point metal materials may be used. As such low melting point metal materials, In (indium: melting point 157 ° C.); indium-gold low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.), Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C.) Tin (Sn) high-temperature solder such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.) (Pb) high temperature solder; zinc (Zn) high temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322 ° C.) Examples thereof include tin-lead based standard solder such as C); brazing material such as Au ₈₈ Ga ₁₂ (melting point 381 ° C.) (the above subscripts all represent atomic%).

  When joining the three members of the cathode panel, the anode panel, and the joining member, the three members may be joined at the same time, or in the first stage, either the cathode panel or the anode panel and the joining member are joined, In the second stage, the other of the cathode panel or the anode panel and the joining member may be joined. If the three-party simultaneous bonding or the second stage bonding is performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, and the bonding member becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the cathode panel, the anode panel, and the joining member can be evacuated to create a vacuum. When exhausting after joining, the atmosphere pressure during joining may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be nitrogen gas or a gas belonging to Group 0 of the periodic table (for example, Ar gas) ) Is preferable, but it can also be performed in the atmosphere.

  When exhaust is performed, the exhaust can be performed through an exhaust pipe called a tip pipe connected in advance to the cathode panel and / or the anode panel. The exhaust pipe is typically a glass pipe, or a metal or alloy having a low coefficient of thermal expansion [for example, an iron (Fe) alloy containing 42 wt% nickel (Ni), 42 wt% nickel (Ni), A hollow tube made of an iron (Fe) alloy containing 6 wt% chromium (Cr)], and the above-mentioned frit glass or After being joined using a low melting point metal material and the space has reached a predetermined degree of vacuum, it is sealed off by thermal fusion or sealed by crimping. In addition, if the whole flat display device is once heated and then cooled before sealing, it is preferable because residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. .

Since the space sandwiched between the cathode panel and the anode panel is maintained in a vacuum state, locally, between the cathode panel and the anode panel, so that the flat display device is not damaged by atmospheric pressure, It is preferable to arrange a spacer. One row of spacers may be composed of a single spacer or a plurality of spacers. That is, the number of spacers along the X direction may be one or two or more, and depends on the specifications of the flat display device. The spacer base | substrate which comprises a spacer can be comprised from ceramics or glass material, for example. When the spacer substrate is composed of ceramics, the ceramics include aluminum silicate compounds such as mullite, aluminum oxides such as alumina, barium titanate, lead zirconate titanate, zirconia (zirconium oxide), cordiolite, borosilicate barium, Examples thereof include iron silicate, glass ceramic materials, titanium oxide, chromium oxide, magnesium oxide, iron oxide, vanadium oxide, nickel oxide added to these, and for example, JP 2003-524280 A The materials described in (1) can also be used. In this case, a spacer substrate can be manufactured by forming a so-called green sheet, firing the green sheet, and cutting the fired green sheet product. Glass materials include high strain point glass, low alkali glass, non-alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), Examples thereof include stellite (2MgO · SiO ₂ ), lead glass (Na ₂ O · PbO · SiO ₂ ), and crystalline glass. In addition, it is preferable to chamfer the end portion of the spacer to remove the protruding portion and the like. For example, the spacer may be fixed by being sandwiched between partition walls provided in the anode panel, or, for example, a spacer holding portion may be formed on the anode panel and / or the cathode panel and fixed by the spacer holding portion. do it.

An antistatic film, a resistor film, or the like may be provided on the side surface of the spacer (more specifically, the side surface of the spacer base). The material constituting the antistatic film preferably has a secondary electron emission coefficient close to 1. As the material constituting the antistatic film, a semiconductor such as Si or Ge, a semimetal such as graphite, an oxide, or a boride , Carbides, sulfides, nitrides, and the like can be used. Specifically, for example, compounds containing a metalloid element such as a semi-metal and MoSe _x such as _{graphite, CrO x, NdO x, CrAl} x O y, manganese _{oxide, La x Ba 2-x CuO} 4, La x Y Oxides such as _1-x CrO ₃ , borides such as AlB _x and TiB _x , carbides such as SiC, sulfides such as MoS _x and WS _x , and compounds of tungsten nitride and germanium nitride, BN, TiN, AlN In addition, for example, materials described in JP-T-2004-500688 and the like can also be used. Examples of the material constituting the resistor film include ruthenium oxide (RuO _x ) and cermet. The film provided on the surface of the spacer such as an antistatic film may be made of a single type of material or may be made of a plurality of types of materials. For example, the film may have a single-layer structure, and the layer may be composed of a plurality of types of materials, or the film is formed by laminating a plurality of layers, and each layer is composed of different materials. Also good. These films can be formed by well-known methods such as various PVD methods such as sputtering and vacuum deposition, various CVD methods, and screen printing methods. Moreover, what is necessary is just to set arbitrarily the film thickness of these films | membranes as needed.

  In the method of the present invention, since the adhesive is formed only on the portion where the phosphor region is to be formed, the process for forming the phosphor region can be simplified, and mask exposure as in the prior art is performed. Is not required, and problems such as clogging do not occur in an apparatus (for example, a printing apparatus such as an inkjet printing apparatus or a screen printing apparatus) used for forming the phosphor region. Moreover, since the phosphor particles are attached (adhered) only to the portion where the phosphor region is to be formed, use of the phosphor particles is not wasted, and the effective utilization efficiency of the phosphor particles can be improved, Since the phosphor particles are used in a dry powder state, it is not necessary to prepare a phosphor slurry. Furthermore, since no hexavalent chromium compound such as ammonium dichromate, which is a photopolymerization cross-linking agent, is used, water treatment such as drainage is not necessary, and heat energy used for the drying process of the phosphor slurry, for development Use of necessary pure water can be reduced.

  Hereinafter, the present invention will be described based on examples with reference to the drawings. Prior to that, a common outline of flat-type display devices in examples 1 to 2 will be described below. Here, the flat display devices in Examples 1 and 2 are cold cathode field emission display devices (hereinafter, abbreviated as display devices). In the display devices according to the first and second embodiments, the strip-shaped gate electrode (for example, scanning electrode) 13 extends in the first direction (X direction), and the strip-shaped cathode electrode (for example, data electrode) 11 is the second. (Y direction).

  A schematic partial end view of the display device in the example is the same as that shown in FIG. 6, and a schematic exploded perspective view of a part of the cathode panel CP and the anode panel when the cathode panel CP and the anode panel are disassembled is as follows. This is the same as shown in FIG. That is, the display device according to the embodiment includes an anode panel in which the phosphor region 22 and the anode electrode 24 are provided on the substrate 20, and a first direction (X direction, row direction) and a second direction on the support 10. The cathode panel CP provided with the electron emission regions EA arranged in a two-dimensional matrix along the (Y direction, column direction) is bonded to the outer peripheral portion, more specifically via the bonding member 27. The space SP sandwiched between the cathode panel CP and the anode panel is kept in a vacuum. Alternatively, the display device according to the embodiment includes a display panel in which at least the phosphor region 22 is provided on the substrate 20. Hereinafter, the anode panel and the display panel are collectively referred to as an anode panel AP.

Here, the display device according to the embodiment includes an effective area EF and an invalid area NF surrounding the effective area EF. The effective area EF is a display area located substantially in the center that performs a practical image display function as a display device. The effective area EF is surrounded by an ineffective area NF that surrounds the frame. The space SP sandwiched between the cathode panel CP, the anode panel AP, and the bonding member 27 is maintained in a vacuum (pressure: for example, 10 ⁻³ Pa or less). The ineffective area NF of the cathode panel CP is provided with a through hole (not shown) for evacuation, and an exhaust pipe (not shown) called a tip pipe that is sealed after evacuation is provided around the through hole. Is attached.

In the embodiment, the field emission element constituting the electron emission region is constituted by, for example, a Spindt type field emission element. Spindt-type field emission devices
(A) a strip-shaped cathode electrode 11 formed on the support 10;
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a strip-shaped gate electrode 13 formed on the insulating layer 12;
(D) An opening 14 (provided in the gate electrode 13) provided in a portion of the gate electrode 13 and the insulating layer 12 located in the overlapping region where the cathode electrode 11 and the gate electrode 13 overlap, with the cathode electrode 11 exposed at the bottom. 14A of 1st opening parts, 2nd opening part 14B provided in the insulating layer 12, and,
(E) an electron emitting portion 15 provided on the cathode electrode 11 exposed at the bottom of the opening 14 and whose electron emission is controlled by applying a voltage to the cathode electrode 11 and the gate electrode 13;
It is composed of Here, the shape of the electron emission portion 15 is a conical shape. An interlayer insulating layer 16 is formed on the insulating layer 12, and a focusing electrode 17 is formed on the interlayer insulating layer 16.

  In the display device of the embodiment, the gate electrode 13 and the cathode electrode 11 are each formed in a strip shape in the directions (first direction and second direction) in which the projected images of the electrodes 13 and 11 are orthogonal to each other. In addition, a plurality of field emission elements are provided in a region where the projection images of these two electrodes overlap (corresponding to a region corresponding to one subpixel (subpixel), which is an electron emission region EA). For simplification of the drawing, FIG. 6 shows two electron emission portions 15 in each electron emission area EA. The electron emission areas EA are usually arranged in a two-dimensional matrix as described above in the effective area EF (area that functions as an actual display portion) of the cathode panel CP.

  The anode panel AP includes a substrate 20, a phosphor region 22 formed on the substrate 20 and having a predetermined pattern, and an anode electrode 24 formed thereon. One sub-pixel (one sub-pixel) includes an electron emission area EA and a phosphor area 22 on the anode panel side facing the electron emission area EA. In the effective area EF, the sub-pixels are arranged on the order of several hundred thousand to several million, for example. A light absorption layer (black matrix) 23 is formed on the substrate 20 between the phosphor region 22 and the phosphor region 22 in order to prevent color turbidity of the display image and occurrence of optical crosstalk. ing. The anode electrode 24 is made of aluminum (Al) having a thickness of about 0.3 μm, is in the form of a thin sheet that covers the effective region EF, and is provided so as to cover the phosphor region 22. In FIG. 7, illustration of the partition walls, spacers, and spacer holding portions is omitted. In the case of a color display device, one pixel (one pixel) is composed of a set of one red light emitting phosphor region 22R, one green light emitting phosphor region 22G, and one blue light emitting phosphor region 22B. Has been. A grid-like partition wall 21 surrounding each phosphor region 22 is formed on the substrate 20. The planar shape (corresponding to the inner contour line of the projected image of the partition wall side surface and a kind of opening region) of the portion surrounding the phosphor region 22 in the lattice-shaped partition wall 21 is a rectangular shape (rectangle), and these planes The shape (planar shape of the opening region) is arranged in a two-dimensional matrix (more specifically, a cross beam), and a lattice-like partition wall 21 is formed. A part of the partition functions as the spacer holding part 25.

In the display device of the embodiment, a plurality of rows of flat spacers 26 extending in the first direction (X direction) are arranged between the cathode panel CP and the anode panel AP. In addition, several tens to several hundreds of gate electrodes 13 are sandwiched between the spacers 26 and 26. The top surface and the bottom surface of the spacer 26 are parallel to the XY plane, the side surfaces are parallel to the XZ plane, and the end surfaces are parallel to the YZ plane. The spacer base 26A constituting the spacer 26 is made of, for example, aluminum oxide (Al ₂ O ₃ ), and the resistance value between the top surface and the bottom surface of the spacer 26 is about 1 × 10 ¹⁰ Ω (about ¹⁰ GΩ). Further, on the side surface of the spacer base 26A, for example, an antistatic film 26B made of chromium oxide (CrO _x ) having a thickness of 4 nm is formed based on an RF sputtering method. Chromium oxide has a relatively small secondary electron emission coefficient and is a very preferable material for the antistatic film under the condition that the spacer 26 is positively charged. Further, an end electrode layer 26C made of platinum (Pt) is formed on the top and bottom surfaces of the spacer base 26A. Alternatively, a nickel-vanadium alloy can be used as a material constituting the end electrode layer 26C.

In the display device according to the embodiment, the cathode electrode 11 is connected to the cathode electrode control circuit 31, the gate electrode 13 is connected to the gate electrode control circuit 32, and the focusing electrode is provided. Connected to a circuit (not shown), the anode electrode 24 is connected to an anode electrode control circuit 33. At the time of display operation of the display device, the anode voltage V _A applied from the anode electrode control circuit 33 to the anode electrode 24 is normally constant, for example, 5 to 15 kilovolts, specifically, for example, 9 kilovolts ( For example, d ₀ = 2.0 mm). On the other hand, regarding the voltage V _C applied to the cathode electrode 11 and the voltage V _G applied to the gate electrode 13 during the display operation of the display device,
(1) A method in which the voltage V _C applied to the cathode electrode 11 is constant and the voltage V _G applied to the gate electrode 13 is changed. (2) The voltage V _C applied to the cathode electrode 11 is changed and applied to the gate electrode 13. changing the voltage V _C is applied the voltage V _G to the method (3) a cathode electrode 11, fixed to, and, any method to change the voltage V _G applied to the gate electrode 13 may be employed but, In the display device in the embodiment, the above-described method (2) is adopted.

That is, during display operation of the display device, a relatively negative voltage (V _C ) is applied to the cathode electrode 11 from the cathode electrode control circuit 31, and a relatively positive voltage (V _G ) is applied to the gate electrode 13. When a focusing electrode is provided from the control circuit 32, for example, 0 V is applied to the focusing electrode from the focusing electrode control circuit, and a positive voltage (anode) higher than the gate electrode 13 is applied to the anode electrode 24. _A voltage V _A ) is applied from the anode electrode control circuit 33. In such a display device, when an image is displayed by a line sequential driving method, for example, a video signal is input from the cathode electrode control circuit 31 to the cathode electrode 11 and a scanning signal is input from the gate electrode control circuit 32 to the gate electrode 13. . When the cathode electrode 11 is a scan electrode and the gate electrode 13 is a data electrode, a scan signal is input from the cathode electrode control circuit 31 to the cathode electrode 11 and a video signal is input from the gate electrode control circuit 32 to the gate electrode 13. You can enter. Electrons are emitted from the electron emitter 15 based on the quantum tunnel effect due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, and the electrons are attracted to the anode electrode 24. It passes through and collides with the phosphor region 22. As a result, the phosphor region 22 is excited to emit light, and a desired image can be obtained. That is, the operation of this display device is basically controlled by the voltage V _G applied to the gate electrode 13 and the voltage V _C applied to the cathode electrode 11. The cathode electrode 11 is driven by a cathode electrode drive driver, and the gate electrode 13 is driven by a gate electrode drive driver. The cathode electrode control circuit 31, the gate electrode control circuit 32, the anode electrode control circuit 33, and the drive driver can be composed of known circuits.

  Example 1 relates to a method for manufacturing an anode panel according to the first aspect of the present invention and a method for forming a phosphor region according to the first aspect of the present invention. Hereinafter, referring to FIGS. 1A to 1C, FIGS. 2A to 2C, and FIGS. 3A to 3B, which are schematic partial end views of the substrate and the like. The method of Example 1 will be described.

[Step-100]
First, a grid-like partition wall 21 is formed on the substrate 20 (see FIG. 1A). The partition wall 21 also functions as the spacer holding part 25. Specifically, after forming the photosensitive polyimide resin layer on the substrate 20 based on the coating method, the photosensitive polyimide resin layer is selectively removed by photolithography technique and development, and then the remaining photosensitive polyimide resin layer Is fired to form a grid-like partition wall 21 and a spacer holding portion 25. Before forming the partition walls 21, it is preferable to form a light absorption layer (black matrix) 23 made of, for example, chromium oxide on the surface of the portion of the substrate 20 where the partition walls 21 are to be formed. Specifically, a low melting point glass paste colored black with a metal oxide such as cobalt oxide is printed on the substrate 20 by a screen printing method, and then the low melting point glass paste is baked to form a lattice-shaped light. The absorption layer 23 may be formed.

[Step-110]
Next, an adhesive region 41 made of an adhesive 42 is formed on the portion of the substrate 20 where the phosphor region 22 is to be formed. Specifically, the amount of the thickness after drying is several μm on the portion of the substrate 20 exposed between the partition walls 21 based on the printing method (more specifically, the inkjet printing method). An adhesive region 41 made of the adhesive 42 is formed (see FIG. 1B). The adhesive 42 is a milky white aqueous emulsion whose main component is an acrylic copolymer. And the viscosity is about 10 milliPa.sec, and solid content concentration is about dozens of%. In the process of forming the adhesive region 41 once, the adhesive region 41 made of the adhesive 42 is formed on the portion where the phosphor region 22 corresponding to about 1.3 million subpixels is to be formed. did.

[Step-120]
Next, phosphor particles 43 are dispersed on the undried adhesion region 41 (see FIG. 1C). Specifically, the phosphor particles in a dry state are dispersed over the entire surface using a vibrating sieve. Then, after drying the adhesive 42 which comprises the adhesion | attachment area | region 41 using a far-infrared heater, the fluorescent substance particle 43 which does not exist in the adhesion | attachment area | region 41 is removed (refer (A) of FIG. 2). Specifically, the phosphor particles 43 that are not in the adhesion region 41 are removed by spraying compressed air or vacuuming and then spraying water. Then, moisture is removed using hot air, an air knife, a far infrared heater, or by a vacuum drying method. Thus, the phosphor region 22 can be obtained. In the drawing, the phosphor particles 43 are not hatched.

  By repeating the above [Step-110] and [Step-120] a predetermined number of times, for example, the red light-emitting phosphor region 22R can be formed on the entire surface of the substrate 20. Furthermore, by repeating the above steps three times in total, the red light emitting phosphor region 22R, the green light emitting phosphor region 22G, and the blue light emitting phosphor region 22B can be formed on the entire surface of the substrate 20. (See FIG. 2B).

[Step-130]
Thereafter, the anode electrode 24 is formed on the entire surface. Specifically, first, the resin layer 28 is formed on the entire surface. That is, a resin layer 28 (intermediate film) is formed on the top surface of the partition wall 21 and on the phosphor region 22 (see FIG. 2C). Specifically, the resin layer 28 can be formed based on a metal mask printing method or a screen printing method. The resin layer 28 is a kind of varnish in a broad sense, and is a cellulose derivative, generally a mixture of nitrocellulose as a main component dissolved in a volatile solvent such as a lower fatty acid ester, or other synthetic polymer. It is composed of the urethane lacquer, acrylic lacquer, and water-soluble acrylic emulsion used. Next, the resin layer 28 is dried. That is, the substrate 20 is carried into a drying furnace and dried at a predetermined temperature. The drying temperature of the resin layer 28 is preferably in the range of 50 ° C. to 90 ° C., for example, and the drying time of the resin layer 28 is preferably in the range of several minutes to several tens of minutes, for example. Of course, as the drying temperature increases and decreases, the drying time decreases.

  Next, an anode electrode 24 that covers the display region is formed (see FIG. 3A). Specifically, an anode electrode 24 made of aluminum (Al) is formed by various vacuum deposition methods or sputtering methods so as to cover the resin layer 28 formed on the top surface of the partition wall 21 and the phosphor region 22. To do.

  Thereafter, the adhesion region 41 is removed by combustion (see FIG. 3B). Alternatively, the adhesion region 41 is removed to obtain the phosphor region 22. Specifically, the resin layer 28 and the adhesion region 41 are removed by combustion at about 400 ° C. in the air. As a result, the anode electrode 24 made of aluminum (Al) is left on the phosphor region 22 (including above the phosphor region 22) and the partition wall 21. Note that the gas generated by the combustion of the resin layer 28 and the adhesion region 41 is discharged to the outside through, for example, fine holes generated in the anode electrode 24. Since the holes are fine, they do not seriously affect the structural strength and image display characteristics of the anode electrode 24. Through the above steps, the anode panel AP (display panel) can be completed.

  Hereinafter, a method for manufacturing a Spindt-type field emission device is shown in FIGS. 8A, 8B, and 9A, which are schematic partial end views of the support 10 and the like constituting the cathode panel CP. As will be described with reference to (B), the cathode panel CP in Example 2 to be described later can also be manufactured by the same method. In the method described below, the description of the process of forming the interlayer insulating layer 16 and the focusing electrode 17 is omitted.

  This Spindt-type field emission device can be basically obtained by a method of forming the conical electron emission portion 15 by vertical vapor deposition of a metal material. That is, the vapor deposition particles are perpendicularly incident on the first opening 14A provided in the gate electrode 13, but use the shielding effect by the overhanging deposit formed near the opening end of the first opening 14A. Thus, the amount of vapor deposition particles reaching the bottom of the second opening 14B is gradually reduced, and the electron emission portion 15 that is a conical deposit is formed in a self-aligning manner. Here, a method of forming the separation layer 18 in advance over the gate electrode 13 and the insulating layer 12 in order to facilitate removal of unnecessary overhang-like deposits will be described. In the drawing for explaining the method of manufacturing the field emission device, only one electron emission portion is shown.

[Step-A0]
First, a cathode electrode conductive material layer made of, for example, polysilicon is formed on the support 10 made of, for example, a glass substrate by a plasma CVD method, and then the cathode electrode conductive material layer is formed based on a lithography technique and a dry etching technique. Is patterned to form a strip-like cathode electrode 11. Thereafter, an insulating layer 12 made of SiO _{2 is} formed on the entire surface by a CVD method.

[Step-A1]
Next, a gate electrode conductive material layer (for example, a TiN layer) is formed on the insulating layer 12 by a sputtering method, and then the gate electrode conductive material layer is patterned by a lithography technique and a dry etching technique. Thus, the strip-shaped gate electrode 13 can be obtained. The strip-shaped cathode electrode 11 extends in the left-right direction in the drawing, and the strip-shaped gate electrode 13 extends in the direction perpendicular to the drawing.

  The gate electrode 13 is formed by a well-known thin film such as a PVD method such as a vacuum evaporation method, a CVD method, a plating method such as an electroplating method or an electroless plating method, a screen printing method, a laser ablation method, a sol-gel method, a lift-off method. You may form by the combination of formation and an etching technique as needed. According to the screen printing method or the plating method, for example, a strip-shaped gate electrode can be directly formed.

[Step-A2]
Thereafter, a resist layer is formed again, the first opening 14A is formed in the gate electrode 13 by etching, the second opening 14B is formed in the insulating layer, and the cathode electrode 11 is formed at the bottom of the second opening 14B. Then, the resist layer is removed. Thus, the structure shown in FIG. 8A can be obtained.

[Step-A3]
Next, nickel (Ni) is obliquely deposited on the insulating layer 12 including the gate electrode 13 while rotating the support 10 to form a release layer 18 (see FIG. 8B). At this time, by selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal of the support 10 (for example, an incident angle of 65 to 85 degrees), nickel is hardly deposited on the bottom of the second opening 14B. A release layer 18 can be formed on the gate electrode 13 and the insulating layer 12. The release layer 18 protrudes in a bowl shape from the opening end of the first opening 14A, whereby the diameter of the first opening 14A is substantially reduced.

[Step-A4]
Next, for example, molybdenum (Mo) is vertically deposited as an electrically conductive material on the entire surface (incident angle: 3 to 10 degrees). At this time, as shown in FIG. 9A, as the conductive member layer 19 having an overhang shape grows on the release layer 18, the substantial diameter of the first opening 14A is gradually reduced. The vapor deposition particles that contribute to the deposition at the bottom of the second opening 14B are gradually limited to those that pass near the center of the first opening 14A. As a result, a conical deposit is formed at the bottom of the second opening 14 </ b> B, and this conical deposit becomes the electron emission portion 15.

[Step-A5]
Thereafter, as shown in FIG. 9B, the peeling layer 18 is peeled off from the surfaces of the gate electrode 13 and the insulating layer 12 by a lift-off method, and the conductive member layer 19 above the gate electrode 13 and the insulating layer 12 is selected. To remove. Thus, a cathode panel CP in which a plurality of Spindt type field emission devices are formed can be obtained. After that, it is preferable to perform isotropic etching to retract the side wall surface of the insulating layer 12 in the opening 14 so that the end of the gate electrode 13 protrudes in the first opening of the gate electrode 13. .

[Step-140]
Then, the anode panel AP and the cathode panel CP obtained based on the method described above are assembled. Specifically, the spacer 26 is attached to the spacer holding portion 25 provided in the anode panel AP, and the anode panel AP and the cathode panel CP are arranged so that the phosphor region 22 and the electron emission region EA face each other, and the anode The panel AP and the cathode panel CP (more specifically, the substrate 20 and the support 10) are joined at the outer peripheral portion via a joining member 27 made of a frame body having a height of about 2 mm made of ceramics or glass. To do. At the time of joining, frit glass as an adhesive layer is applied to the joining part between the joining member 27 and the anode panel AP and the joining part between the joining member 27 and the cathode panel CP, and the frit glass is dried by preliminary firing. Then, the anode panel AP, the cathode panel CP, and the bonding member 27 are bonded together, and the main baking is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the space SP surrounded by the anode panel AP, the cathode panel CP, and the joining member 27 is exhausted through a through hole (not shown) and an exhaust pipe (not shown), and the pressure of the space SP is 10 ⁻⁴ Pa. When reaching the degree, the exhaust pipe is sealed by heating and melting. In this manner, the space SP surrounded by the anode panel AP, the cathode panel CP, and the bonding member 27 can be evacuated. Alternatively, for example, the bonding member 27, the anode panel AP, and the cathode panel CP may be bonded together in a high vacuum atmosphere. Alternatively, depending on the structure of the display device, the anode panel AP and the cathode panel CP may be bonded together by using only an adhesive layer without a frame. Thereafter, wiring connection with necessary external circuits is performed, and the display device is completed. In the second embodiment to be described next, a display device can be obtained by the same method.

  Example 2 relates to a method for manufacturing an anode panel according to the second aspect of the present invention and a method for forming a phosphor region according to the second aspect of the present invention. Hereinafter, the method of Example 2 will be described with reference to FIGS. 4A to 4B and FIGS. 5A to 5B which are schematic partial end views of a substrate and the like.

[Step-200]
First, in the same manner as in [Step-100] of Example 1, a lattice-like partition wall 21 and a light absorption layer (black matrix) 23 are formed on the substrate 20.

[Step-210]
Next, phosphor particles 43 are dispersed on the substrate 20 (see FIG. 4A). Specifically, the phosphor particles in a dry state are dispersed over the entire surface using a vibrating sieve.

[Step-220]
Thereafter, an adhesive region 41 made of an adhesive 42 is formed on the phosphor particles 43 on the portion of the substrate 20 where the phosphor region 22 is to be formed. Specifically, based on a printing method (more specifically, an inkjet printing method) above the portion of the substrate 20 located between the partition walls 21 and 21, the thickness after drying becomes several μm. An adhesive region 41 composed of an appropriate amount of adhesive 42 is formed (see FIG. 4B). The adhesive 42 is the same adhesive as the adhesive 42 used in Example 1. The adhesive 42 enters the gap between the phosphor particles 43 and the phosphor particles 43. And after forming the adhesion area | region 41 in the whole surface of the board | substrate 20, the adhesive agent 42 which comprises the adhesion area | region 41 is dried using a far-infrared heater. Next, the phosphor particles 43 that are not in the adhesion region 41 are removed (see FIG. 5A). Specifically, the phosphor particles 43 that are not in the adhesion region 41 were removed by spraying compressed air and further spraying water. Thereafter, moisture is removed using hot air, an air knife, a far infrared heater, or by a vacuum drying method. Thus, the phosphor region 22 can be obtained.

  By repeating the above [Step-210] and [Step-220] three times in total, the red light emitting phosphor region 22R, the green light emitting phosphor region 22G, and the blue light emitting phosphor region are formed on the entire surface of the substrate 20. 22B can be formed (see FIG. 5B).

[Step-230]
Thereafter, an anode electrode 24 is formed on the entire surface in the same manner as in [Step-130] of Example 1. Specifically, first, the resin layer 28 is formed on the entire surface. That is, in the same manner as in Example 1, the resin layer 28 is formed on the top surface of the partition wall 21 and on the phosphor region 22. Next, an anode electrode 24 that covers the display region is formed. Thereafter, the adhesive region 41 is removed by combustion. Alternatively, the adhesion region 41 is removed to obtain the phosphor region 22. Through the above steps, an anode panel AP (display panel) similar to that shown in FIG. 3B can be completed.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configurations and structures of the flat display device, the cathode panel and the anode panel (display panel), the cold cathode field emission display device and the cold cathode field emission device described in the embodiments are examples, and may be changed as appropriate. it can. The display device has been described by taking color display as an example, but it may also be a single color display.

  In some cases, when forming the adhesive region 41 made of the adhesive 42 in [Step-110] of Example 1, if the thickness of the adhesive region 41 is sufficiently thicker than the size of the phosphor particles 43, The resin layer 28 can be replaced with the bonding region 41, and the formation of the resin layer 28 in [Step-130] can be omitted. Similarly, in some cases, in [Step-220] of Example 2, when forming the adhesive region 41 made of the adhesive 42, the thickness of the adhesive region 41 is sufficiently larger than the size of the phosphor particles 43. If it is formed thick, the resin layer 28 can be replaced with the bonding region 41, and the formation of the resin layer 28 in [Step-230] can be omitted.

  In the field emission device, a mode in which one electron emission portion corresponds to one opening has been described. However, depending on the structure of the field emission device, a mode in which a plurality of electron emission portions correspond to one opening. Alternatively, one electron emission portion may correspond to a plurality of openings. Alternatively, a plurality of first openings may be provided in the gate electrode, a second opening connected to the plurality of first openings related to the insulating layer may be provided, and one or a plurality of electron emission portions may be provided. .

The electron emission region can also be constituted by an electron emission element commonly called a surface conduction electron emission element. This surface conduction electron-emitting device is formed on a support made of glass, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide ( A pair of electrodes made of a conductive material such as (PdO), having a very small area and arranged with a predetermined gap (gap) are formed in a matrix. A carbon thin film is formed on each electrode. The row direction wiring is connected to one electrode (for example, the first electrode) of the pair of electrodes, and the column direction wiring is connected to the other electrode (for example, the second electrode) of the pair of electrodes. It has a configuration. By applying a voltage to the pair of electrodes (first electrode and second electrode), an electric field is applied to the carbon thin films facing each other across the gap, and electrons are emitted from the carbon thin film. By causing the electrons to collide with the phosphor region on the anode panel, the phosphor region is excited to emit light, and a desired image can be obtained. Alternatively, the electron emission region can be formed from a metal / insulating film / metal type element.

1A to 1C are schematic partial end views of a substrate and the like for explaining a method for manufacturing an anode panel and a method for forming a phosphor region in Example 1. FIG. 2 (A) to 2 (C) are schematic views of a substrate and the like for explaining the anode panel manufacturing method and the phosphor region forming method of Example 1 following FIG. 1 (C). FIG. 3A to 3B are schematic views of a substrate and the like for explaining the anode panel manufacturing method and the phosphor region forming method of Example 1 following FIG. 2C. FIG. 4A to 4B are schematic partial end views of a substrate and the like for explaining a method for manufacturing an anode panel and a method for forming a phosphor region in Example 2. FIG. FIGS. 5A and 5B are schematic views of a substrate and the like for explaining the anode panel manufacturing method and the phosphor region forming method of Example 1 following FIG. 4B. FIG. FIG. 6 is a schematic partial end view of a cold cathode field emission display device having a Spindt type cold cathode field emission device as a flat display device. FIG. 7 is a schematic exploded perspective view of a part of the cathode panel and the anode panel when the cathode panel and the anode panel constituting the cold cathode field emission display shown in FIG. 6 are disassembled. FIGS. 8A and 8B are schematic partial end views of a support and the like for explaining a method for manufacturing a Spindt-type cold cathode field emission device. FIGS. 9A and 9B are schematic partial end views of a support and the like for explaining the manufacturing method of the Spindt-type cold cathode field emission device following FIG. 8B. . 10A to 10C are schematic partial end views of a substrate and the like for explaining a method of manufacturing an anode panel constituting a conventional flat display device. 11A to 11B are schematic partial end views of a substrate and the like for explaining a manufacturing method of an anode panel constituting a conventional flat display device, following FIG. 10C. It is.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Support body, 11 ... Cathode electrode, 12 ... Insulating layer, 13 ... Gate electrode, 14, 14A, 14B ... Opening part, 15 ... Electron emission part, 16 ... Interlayer insulation layer, 17 ... convergence electrode, 18 ... release layer, 19 ... conductive member layer, 20 ... substrate, 21 ... partition, 22, 22R, 22G, 22B ... fluorescence Body region, 23 ... light absorption layer (black matrix), 24 ... anode electrode, 25 ... spacer holding part, 26 ... spacer, 26A ... spacer base, 26B ... antistatic film , 26C ... end electrode layer, 27 ... bonding member, 28 ... resin layer, 31 ... cathode electrode control circuit, 32 ... gate electrode control circuit, 33 ... anode electrode control circuit , 41 ... Adhesive region, 42 ... Adhesive, 43 ... Light particles, CP · · · cathode panel, AP · · · anode panel, EA · · · electron emitting region, EF · · · effective area, NF · · · invalid area

Claims (8)

And an anode panel having fluorescent region and an anode electrode is provided on the substrate, on the support and the cathode panel having electron emitting regions arranged in a two-dimensional matrix composed are joined at the outer peripheral portion, the cathode space sandwiched by the panel and said anode panel is a process for the preparation of the anode panel in the flat display device, which is held in a vacuum,
(A) An adhesive region made of an adhesive is formed on a portion where the phosphor region made of a plurality of phosphor particles is to be formed on the substrate so that the thickness is larger than the size of the phosphor particles. And
(B) said sprayed with the phosphor particles in the bonding area, then removing the not in the bonding region phosphor particles,
(C) forming the anode electrode on the entire surface,
(D) removing the adhesion region by combustion;
Method for producing the steps Bei Elua node panel. Wherein in the step (A), based on the printing method, the manufacturing method of the anode panel according to 請 Motomeko 1 you form the adhesive region. Wherein In step (B), the manufacturing method of the anode panel according to the phosphor particles in the dry state 請 Motomeko 1 or 2 you spread on the entire surface. And an anode panel having fluorescent region and an anode electrode is provided on the substrate, on the support and the cathode panel having electron emitting regions arranged in a two-dimensional matrix composed are joined at the outer peripheral portion, the cathode space sandwiched by the panel and said anode panel is a manufacturing method of the anode panel in a plane type display device which is held in a vacuum,
(A) was sprayed phosphor particles on the substrate,
(B) An adhesive region made of an adhesive is formed on a portion where the phosphor region made of a plurality of phosphor particles is to be formed on the substrate so that the thickness is larger than the size of the phosphor particles. and, removing the phosphor particles not in the bonding region,
(C) forming the anode electrode on the entire surface,
(D) removing the adhesion region by combustion;
Manufacturing method of the anode panel obtaining Bei each step. Wherein In step (B), based on the printing method, the manufacturing method of the anode panel according to 請 Motomeko 4 you form the adhesive region. Wherein in the step (A), method of manufacturing the anode panel according to 請 Motomeko 4 or 5 you spraying the phosphor particles in the dry state. A method of forming a phosphor region in a flat display device having a display panel having at least a phosphor region provided on a substrate,
(A) An adhesive region made of an adhesive is formed on a portion where the phosphor region made of a plurality of phosphor particles is to be formed on the substrate so that the thickness is larger than the size of the phosphor particles. And
(B) said spraying the phosphor particles in the bonding area, then removing the not in the bonding region phosphor particles,
(C) obtaining the phosphor region by removing said adhesion area,
Bei obtain phosphor region forming method of each process. A method of forming a phosphor region in a flat display device having a display panel having at least a phosphor region provided on a substrate,
(A) spraying the phosphor particles on the substrate,
The phosphor region consisting of (b) a plurality of phosphor particles on the portion to be formed on the substrate, to form an adhesive region comprising an adhesive, to remove the no phosphor particles on the adhesive area ,
(C) obtaining the phosphor region by removing the adhesion region;
Bei obtain phosphor region forming method of each process.

Images