JP2008041422A - Flat type display apparatus and spacer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flat type display apparatus reducing relative variation in luminance in picture elements along a spacer. <P>SOLUTION: The flat type display apparatus has a cathode panel CP and an anode panel AP joined in their periphery parts, a plate type spacer 40 installed between the cathode panel CP and the anode panel AP and a space between the cathode panel CP and the anode panel AP is retained to be a vacuum. When a longitudinal direction of the space is made direction X, a thickness direction is direction Y and a height direction is direction Z, the spacer 40 is formed by a spacer base material 50 and an electrification preventing film 60 formed on a side surface part 51 of the spacer base material 50 which is plane XZ. The electrification preventing film 60 is composed of a plurality of electrification preventing regions 61 separated by separating regions 62. When the electrification preventing film 60 is cut off by an arbitrary virtual plane YZ, a cross section of the separating region 62 is included in the cross section of the electrification preventing film 60. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a spacer used in a flat display device and a flat display device in which such a spacer is incorporated.

  As an image display device that replaces a cathode ray tube (CRT), various types of flat panel display devices have been studied. Examples of such a flat display device include a liquid crystal display device (LCD), an electroluminescence display device (ELD), and a plasma display device (PDP). Development of a flat display device incorporating an electron-emitting device is also underway. Here, cold cathode field emission devices, metal / insulating film / metal type devices (also called MIM devices), and surface conduction electron emission devices are known as electron emission devices. A flat display device incorporating an emitting element has attracted attention from the viewpoint of high resolution, high luminance color display, and low power consumption.

  A cold cathode field emission display device (hereinafter, simply referred to as a display device), which is a flat display device incorporating a cold cathode field emission device as an electron emission source, generally has a two-dimensional matrix shape. A cathode panel having an electron emission region corresponding to each of the arranged pixels (in the case of color display, each subpixel) and a phosphor layer that emits light when excited by collision with electrons emitted from the electron emission region The anode panel which has has the structure arrange | positioned facing through the space hold | maintained in the vacuum. The electron emission region is usually provided with one or a plurality of cold cathode field emission devices (hereinafter sometimes abbreviated as field emission devices). Examples of field emission devices include Spindt type, flat type, edge type, and planar type.

  As an example, a conceptual partial end view of a display device having a Spindt-type field emission device is shown in FIG. 15, and a schematic view of a part of the cathode panel CP and the anode panel AP when the cathode panel CP and the anode panel AP are disassembled. A simple exploded perspective view is shown in FIG. The Spindt-type field emission device constituting this display device is formed on a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, and an insulating layer 12. The gate electrode 13 and the opening 14 provided in the gate electrode 13 and the insulating layer 12 (the first opening 14A provided in the gate electrode 13 and the second opening 14B provided in the insulating layer 12). And a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14.

  In this display device, the cathode electrode 11 extends in the first direction (Y direction in FIGS. 15 and 16). The gate electrode 13 extends in a second direction (X direction in FIGS. 15 and 16) different from the first direction. In general, the cathode electrode 11 and the gate electrode 13 are each formed in a strip shape in a direction in which the projected images of both the electrodes 11 and 13 are orthogonal to each other. An overlapping region where the strip-shaped cathode electrode 11 and the strip-shaped gate electrode 13 overlap is an electron emission region EA, which corresponds to a region of one subpixel. The electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area of the cathode panel CP (area corresponding to the display area of the display device).

  On the other hand, the anode panel AP has a phosphor layer 22 (specifically, a red light-emitting phosphor layer 22R, a green light-emitting phosphor layer 22G, and a blue light-emitting phosphor layer 22B) having a predetermined pattern on the substrate 20. The phosphor layer 22 is formed and covered with the anode electrode 24. Between these phosphor layers 22, a light absorbing layer (black matrix) 23 made of a light absorbing material such as carbon is embedded to prevent display image color turbidity and optical crosstalk. ing. In the figure, reference numeral 21 represents a partition, reference numeral 140 represents a plate-like spacer, reference numeral 25 represents a spacer holding portion, reference numeral 26 represents a bonding member, and reference numeral 16 represents an interlayer insulating layer. Reference numeral 17 represents a focusing electrode. In FIG. 16, the illustration of the partition walls, the spacers, the spacer holding portion, the converging electrode, and the interlayer insulating layer is omitted.

  The anode electrode 24 has a function of preventing charging of the phosphor layer 22 in addition to a function as a reflection film that reflects light emitted from the phosphor layer 22. Further, the barrier rib 21 is configured such that electrons recoiled from the phosphor layer 22 or secondary electrons emitted from the phosphor layer 22 (hereinafter, these electrons are collectively referred to as backscattered electrons) are used as other fluorescence. It has a function of preventing so-called optical crosstalk (color turbidity) from colliding with the body layer 22.

  One sub-pixel is composed of an electron emission area EA on the cathode panel side and a phosphor layer 22 on the anode panel side facing these electron emission areas EA. In the case of a color display device, one pixel (one pixel) is composed of a set of one red-emitting phosphor layer, one green-emitting phosphor layer, and one blue-emitting phosphor layer. . In the effective area, such pixels are arranged on the order of hundreds of thousands to millions, for example.

Then, the anode panel AP and the cathode panel CP are arranged so that the electron emission region EA and the phosphor layer 22 face each other, and joined at the peripheral portion via the joining member 26, and then exhausted and sealed. Thus, a display device can be manufactured. A space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 26 is in a high vacuum (for example, 1 × 10 ⁻³ Pa or less).

  Therefore, unless the spacer 140 is disposed between the anode panel AP and the cathode panel CP, the display device is damaged by the atmospheric pressure. The spacer 140 includes a spacer base 150 and an antistatic film 160 provided on the side surface of the spacer base 150.

  A relatively negative voltage is applied to the cathode electrode 11 from the cathode electrode control circuit 31, a relatively positive voltage is applied to the gate electrode 13 from the gate electrode control circuit 32, and a convergence electrode control circuit ( A relatively negative voltage (for example, 0 volts) is applied from an anode electrode control circuit 33, and a higher positive voltage than that of the gate electrode 13 is applied to the anode electrode 24. When performing display in such a display device, for example, a scanning signal is input to the cathode electrode 11 from the cathode electrode control circuit 31, and a video signal is input to the gate electrode 13 from the gate electrode control circuit 32. Alternatively, a video signal is input from the cathode electrode control circuit 31 to the cathode electrode 11, and a scanning signal is input from the gate electrode control circuit 32 to the gate electrode 13. Electrons are emitted from the electron emitter 15 based on the quantum tunnel effect due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, and the electrons are attracted to the anode electrode 24. It passes and collides with the phosphor layer 22. As a result, the phosphor layer 22 is excited to emit light, and a desired image can be obtained. That is, the operation of the cold cathode field emission display is basically controlled by the voltage applied to the gate electrode 13 and the voltage applied to the cathode electrode 11.

  The spacer base material 150 constituting the spacer 140 is made of a rigid material such as mullite, ceramics such as alumina and barium titanate, or glass. Both ends of the spacer 140 are in contact with the anode electrode 24 and the focusing electrode 17, respectively. Therefore, a potential difference (voltage) between the voltage applied to the anode electrode 24 and the voltage applied to the focusing electrode 17 is applied between both ends of the spacer 140. Depending on the type of the display device, the cathode panel side of the spacer 140 may be in contact with another electrode, for example, the gate electrode 13. In this case, a potential difference (voltage) between the voltage applied to the anode electrode 24 and the voltage applied to the gate electrode 13 is applied between both ends of the spacer 140. Therefore, the spacer 140 is basically required to have a high electric resistance so that an excessive current does not flow through the spacer 140.

17A and 17B schematically show the trajectory of the electron beam in the pixel located in the vicinity of the spacer 140. FIG. In FIG. 17, or FIGS. 18, 6, and 7 (B) described later, the partition wall 21, the spacer holding portion 25, and the interlayer insulating layer 16 are not shown, and the focusing electrode 17 is Although it is illustrated as being formed directly on the insulating layer 12, the focusing electrode 17 is actually formed on the interlayer insulating layer 16. As shown in FIG. 17A, the electrons emitted from the electron emission portion 15 go to the phosphor layer 22. Backscattered electrons are generated as described above due to the electrons that have passed through the anode electrode 24 in the anode panel AP and collided with the phosphor layer 22. A part of the backscattered electrons collides with the side surface of the spacer 140 (see FIG. 17B). When electrons collide with the side surface of the spacer 140, secondary electrons are emitted from the surface. If there is a difference between the amount of electrons colliding with the spacer 140 and the amount of secondary electrons emitted from the spacer 140, the spacer 140 is charged and affects the trajectory of the electrons. A change in luminance occurs in the pixels along. For this reason, the antistatic film 160 made of a material having a secondary electron emission coefficient close to 1 is provided on the side surface of the spacer base material 150. Various materials such as semimetals such as graphite, oxides such as CrO _x , borides, carbides, sulfides, and nitrides can be used as materials constituting the antistatic film 160 (materials whose secondary electron emission coefficient is close to 1). Materials are known. For example, various materials are disclosed in JP-T-2004-500688.

  When the spacer 140 is a complete insulator as a whole, the charge on the side surface of the spacer 140 cannot flow to the anode panel side or the cathode panel side, and a luminance change occurs in the pixels along the spacer 140. Therefore, in the spacer 140, an excessive current does not flow due to a potential difference between a voltage applied to the anode electrode 24 and a voltage applied to the focusing electrode 17 (in some cases, a voltage applied to the gate electrode 13), and The electrical resistance is required to be high enough to allow charging on the side surface of the spacer 140 to the anode panel side or the cathode panel side without hindrance.

Special table 2003-524280 gazette JP-T-2004-500688

By the way, the electric field distribution in the vicinity of the spacer 140 may change due to a part of the backscattered electrons colliding with the side surface of the spacer 140 for a long time. As described above, when a metal oxide film made of, for example, CrO _x is provided as the antistatic film 160 on the side surface portion of the spacer base material 150, the metal oxide film is reduced by collision of electrons, The electrical resistance value may fluctuate (decrease). When the electric resistance characteristic of the antistatic film 160 changes, the electric field distribution near the spacer 140 changes and the electron beam trajectory is curved (see FIG. 18). As a result, the luminance characteristics of the pixels near the spacer 140 of the display device change.

  The fluctuation of the electric resistance characteristic of the antistatic film 160 (decrease in the electric resistance value) usually increases with the operating time of the display device. Therefore, the degree of the above-described curvature of the electron beam trajectory increases depending on the operation time of the display device. Accordingly, the luminance characteristics of the pixels in the vicinity of the spacer 140 of the display device change with time. On the other hand, the above phenomenon does not occur with respect to the pixels away from the spacer 140. For this reason, in the display screen of the display device, a relative luminance change occurs in the pixels along the spacers 140, and the uniformity of the display screen is deteriorated.

  Accordingly, an object of the present invention is to provide a flat panel display device capable of reducing a relative luminance change of pixels along the spacer, and a spacer used in the flat panel display device.

  In order to achieve the above object, the flat display device according to the present invention includes a cathode panel in which a plurality of electron-emitting regions for emitting electrons are formed on a support, and a fluorescence in which electrons emitted from the electron-emitting regions collide with each other. The anode panel formed by forming the body layer and the anode electrode on the substrate is joined at the peripheral edge thereof, and a plate-like spacer is disposed between the cathode panel and the anode panel, and is sandwiched between the cathode panel and the anode panel. This is a flat display device in which the space is maintained in a vacuum.

  In order to achieve the above object, the spacer of the present invention includes a cathode panel in which a plurality of electron emission regions for emitting electrons are formed on a support and a phosphor in which electrons emitted from the electron emission region collide. An anode panel having a layer and an anode electrode formed on a substrate is joined at the periphery thereof, and is used in a flat display device in which a space sandwiched between the cathode panel and the anode panel is maintained in a vacuum. It is a plate-shaped spacer arrange | positioned between a panel and an anode panel.

The spacer in the flat display device of the present invention or the spacer of the present invention (hereinafter, these spacers may be collectively referred to as the spacer of the present invention) is referred to as the X direction in the longitudinal direction and the thickness. When the direction is the Y direction and the height direction is the Z direction,
(A) a spacer substrate, and
(B) an antistatic film formed on the side surface of the spacer substrate corresponding to the XZ plane;
Consisting of
The antistatic film is composed of a plurality of antistatic regions separated by a separation region,
When the antistatic film is cut along an arbitrary virtual YZ plane, the cross section of the antistatic film includes the cross section of the separation region.

  That is, even when the spacer is cut along any virtual plane perpendicular to the X direction, the cross section of the antistatic film always includes the cross section of the separation region.

Although the spacer or spacer substrate has six surfaces, in the following description, the spacer or spacer substrate surface (corresponding to one of the XY planes) in contact with the cathode panel is the bottom surface of the spacer or the spacer substrate. The surface of the spacer or the spacer base material that contacts the anode panel (corresponding to the other of the XY planes) may be called the top surface of the spacer or the top surface of the spacer base material. Furthermore, the height reference is the top surface of the spacer or the top surface of the spacer base material, and the height of the spacer or spacer base material is H ₀ , N (where N is an integer of 2 or more). Is set to H _n (where n = 1, 2, 3... N). Note that the value of H _n in the nth antistatic region may be a constant value or a variable value along the X direction in the nth antistatic region. The first antistatic region is located closest to the anode panel, and the Nth antistatic region is located farthest from the anode panel (closest to the cathode panel).

In the spacer or the like of the present invention, the height H of some or all of the antistatic regions is not limited, but is 0.05 times or less the height H ₀ of the spacer substrate (0 <H / H ₀ ≦ 0.05), more preferably 0.025 times or less the height H ₀ of the spacer base material (0 <H / H ₀ ≦ 0.025). Note that the entire antistatic film may be occupied by an antistatic region that satisfies such a height regulation, and the separation region that is in contact with the cathode panel side, as will be described later, of the spacer base material. The antistatic region located on the side of the anode panel may satisfy such a height regulation. Thus, by dividing the antistatic film into a large number of small antistatic regions, even if the electric resistance value in a certain antistatic region varies, the influence on the variation of the electric resistance component of the entire spacer is further reduced. And disturbance of the electric field distribution can be reduced. In addition, even when a short circuit occurs between the antistatic region and the antistatic region, the influence can be reduced and disturbance of the electric field distribution can be reduced.

  Alternatively, it is desirable that the separation region is located on the anode panel side of the side surface portion of the spacer base material. In general, some of the backscattered electrons collide with a portion of the side surface of the spacer closer to the anode panel, so that the change in the electric resistance value of the antistatic region formed on the side portion of the spacer closer to the anode panel large. Therefore, by defining the position of the separation region in this way, even if the electrical resistance value in a certain antistatic region varies, the influence on the variation of the electrical resistance component of the entire spacer can be further reduced.

Here, when the separation region is composed of a single straight line or curve having a width extending in the X direction, the separation region is positioned on the anode panel side of the side surface portion of the spacer base material. When z ₁ is the center position (which is an arbitrary position in the X direction), for example, 0 <z ₁ / H ₀ ≦ 0.5, preferably 0 <z ₁ / H ₀ ≦ 0.4 More preferably, it means that 0 <z ₁ / H ₀ ≦ 0.3 is satisfied.

On the other hand, when the separation region is composed of M lines (where M is an integer of 2 or more) having a width extending in the X direction, the separation region is on the anode panel side of the side surface of the spacer base material. When the position of the center of the first separation region located closest to the anode panel in the Z direction (arbitrary position in the X direction) is z ₁ , z ₁ / H ₀ is For example, it means that the above relationship is satisfied. When the center position in the Z direction of the (N-1) th separation region located farthest from the anode panel (arbitrary position in the X direction) is z _(N-1) , 0 <z _(N-1) / H ₀ ≦ 0.8, preferably 0 <z _(N−1) / H ₀ ≦ 0.6 is satisfied.

  The spacer of the present invention including the preferred embodiment and configuration described above is not limited, but the extending direction of the separation region is substantially parallel to the X direction, that is, the separation region is in the X direction. It is desirable that it is composed of one or M substantially straight lines having a width (length along the Z direction) extending in the direction. With such a configuration of the separation region, the electric field distribution can be made more uniform over the entire length of the spacer.

  Here, “substantially parallel” and “substantially straight line” mean including a state deviating from a parallel or straight line in a strict sense due to manufacturing variation in formation of the separation region during the formation of the antistatic film. . The same applies to the following description.

  Alternatively, in the spacer of the present invention including the preferred embodiment and configuration described above, when the antistatic region is cut along the virtual XY plane, the cross section of the antistatic region is the cross section of the second separation region. May be included. That is, when the antistatic region is cut along a virtual plane perpendicular to the Z direction, the cross section of the antistatic region includes the cross section of the second separation region. The entire antistatic film may be occupied by the antistatic region having such a second separation region, and the separation region in contact with the cathode panel side is the side surface portion of the spacer base material as described above. Such an antistatic region located on the anode panel side may have such a second separation region. In this case, although not limited, the direction in which the separation region extends is substantially parallel to the X direction, and the direction in which the second separation region extends is substantially parallel to the Z direction. It consists of one or M substantially straight lines having a width (length along the Z direction) extending in the X direction, and the second separation region has a width (length along the X direction) extending in the Z direction. 1) or M ′ (where M ′ is an integer equal to or greater than 2). The second separation region adjacent in the Z direction may be configured on an imaginary straight line extending in the Z direction or may be configured not. That is, in the former configuration, the antistatic regions having a rectangular planar shape are arranged in a two-dimensional matrix, or are arranged in a grid pattern. On the other hand, in the latter configuration, the antistatic regions having a rectangular planar shape are arranged in a staggered manner. By adopting such a configuration for the antistatic region, even when a short circuit occurs between the antistatic region and the antistatic region, the effect can be further reduced, and the disturbance of the electric field distribution can be further reduced. be able to.

Furthermore, in the spacer of the present invention including the preferred embodiment and configuration described above, the area of one side surface portion of the spacer base material is S ₀ , and the total area of the separation regions in one side surface portion (note that When the second isolation region is formed, 0 <S ₁ / S ₀ ≦ 0.3, where S ₁ is the total area of the isolation region and the second isolation region on one side surface portion, Preferably, 0 <S ₁ / S ₀ ≦ 0.1, more preferably 0 <S ₁ / S ₀ ≦ 0.01 is satisfied.

  When one separation region is taken up, the width (length along the Z direction) of the separation region may be constant or may vary along the X direction. In addition, the width (length along the Z direction) of each separation region may be the same or different. Similarly, when one second separation region is taken up, the width (length along the X direction) of the second separation region may be constant or change along the Z direction. May be. Further, the width (length along the X direction) of each second separation region may be the same or different.

In the spacer or the like of the present invention, the spacer substrate can be made from a rigid material such as ceramic or glass. Here, as ceramic materials, aluminum silicate compounds such as mullite, aluminum oxide such as alumina, barium titanate, lead zirconate titanate, zirconia (zirconium oxide), cordiolite, barium borosilicate, iron silicate, glass ceramic Examples of the material include those added with titanium oxide, chromium oxide, magnesium oxide, iron oxide, vanadium oxide, nickel oxide, and the like. For example, the materials described in JP 2003-524280 A Can also be used. Glass materials include high strain point glass, low alkali glass, alkali-free glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite ( 2MgO · SiO ₂ ) and lead glass (Na ₂ O · PbO · SiO ₂ ) can be exemplified.

In addition, in the spacer of the present invention, as a material having a secondary electron emission coefficient close to 1 constituting the antistatic film, a semimetal such as graphite, oxide, boride, carbide, sulfide, and nitriding And the like. More specifically, for example, compounds containing a metalloid element such as a semi-metal and MoSe _x such as _{graphite, CrO x, NdO x, La} x Ba 2-x CuO 4, La x Ba 2-x CuO 4, La _x Y _1-x CrO _{3 and} other oxides, AlB _x and TiB _{x and} other borides, SiC and other carbides, MoS _x and WS _{x and} other sulfides, and BN, TiN, AlN and other nitrides For example, materials described in Japanese Patent Application Publication No. 2004-500688 can be used. When the antistatic film has a single layer structure, the layer may be composed of a single type of material, or the layer may be composed of a mixture of a plurality of types of materials. . Further, the antistatic film may have a structure in which a plurality of layers are laminated. In this case, each layer may be composed of a single type of material, or a mixture of a plurality of types of materials. It may consist of. When the antistatic film is made of a metal oxide, the layer constituting the antistatic film can be made of a mixture of (first metal oxide, second metal oxide). As combinations of (first metal oxide, second metal oxide), (chromium oxide, titanium oxide), (chromium oxide, indium oxide), (manganese oxide, titanium oxide), ( (Manganese oxide, indium oxide), (zinc oxide, titanium oxide) or (zinc oxide, indium oxide). The antistatic film may be provided directly on the side surface portion of the spacer base material. For example, a base film for improving adhesion or the like is formed on the spacer base material. An antistatic film may be formed on the surface.

  The antistatic film is formed by various physical vapor deposition methods (PVD method) such as vapor deposition methods including electron beam vapor deposition method and hot filament vapor deposition method, sputtering method, ion plating method and laser ablation method; It can be formed (film formation) by a known method such as a growth (CVD) method.

  When forming an antistatic film on the side surface of the spacer substrate, an antistatic area is obtained by forming a separation area by film formation based on, for example, a sputtering method or vapor deposition method using a hard mask. Can do. Alternatively, the antistatic region can be obtained by forming a separation region by removing a part of the antistatic film by a so-called lift-off method. Alternatively, after forming an antistatic film on the side surface of the spacer base material, an antistatic region is obtained by forming a separation region by an etching technique, a blast technique, or by laser irradiation. You can also. Furthermore, a groove portion is provided in advance on the side surface of the spacer base material, and an antistatic film is formed by sputtering or vapor deposition, thereby causing a break in the antistatic film in the groove portion. By forming it, an antistatic region can be obtained. Alternatively, the spacer base material is formed by forming an antistatic film made of a material having a thermal expansion coefficient smaller than that of the material constituting the spacer base material on the side surface portion of the spacer base material, and then performing a heat treatment. An antistatic region can be obtained by causing a crack in the antistatic film due to the thermal expansion of the film, and then removing the cracked portion by, for example, ultrasonic cleaning to form a separation region.

In the spacer or the like of the present invention, when the spacer substrate is composed of a ceramic material, the ceramic substrate constituting the spacer substrate is, for example,
(A) Using ceramic powder as a dispersoid, adding a binder to prepare a slurry for green sheets,
(B) A green sheet is obtained from the slurry for the green sheet, and then
(C) firing the green sheet;
Can be obtained. The ceramic material constituting the spacer substrate is formed by sintering the ceramic powder in the green sheet slurry. Examples of the material constituting the ceramic powder serving as the dispersoid of the green sheet slurry include the same materials as exemplified in the description of the spacer base material. If necessary, a conductivity-imparting material may be added to the slurry as a dispersoid. The conductivity-imparting material does not necessarily need to exhibit conductivity in the slurry. The conductivity-imparting material may have a chemical composition that changes when the green sheet is fired, or may have a chemical composition that does not change by firing. Specifically, by firing the green sheet, the conductivity-imparting material in the green sheet is also fired, but it is only necessary that the fired conductivity-imparting material exhibits conductivity. Examples of the conductivity imparting material used as the dispersoid of the slurry for the green sheet include noble metals such as gold and platinum; metal oxides such as molybdenum oxide, niobium oxide, tungsten oxide, and nickel oxide; titanium carbide, tungsten carbide Metal carbides such as nickel carbide; metal salts such as ammonium molybdate. Furthermore, a mixture thereof may be used. Examples of the material constituting the binder added to the green sheet slurry include organic binder materials (for example, acrylic emulsion, polyvinyl alcohol (PVA), polyethylene glycol) or inorganic binder materials (for example, water glass). be able to.

  In the flat display device of the present invention including the above preferred configurations and aspects, cold cathode field emission devices (field emission devices), metal / insulating film / metal type devices (MIM) are used as the electron emission devices constituting the electron emission region. Device) and surface conduction electron-emitting devices. Further, the flat display device of the present invention including the above preferred configurations and aspects can be a cold cathode field emission display device having an electron emission region composed of one or a plurality of cold cathode field emission devices. Alternatively, a flat display device having an electron emission region composed of a metal / insulating film / metal type element (also referred to as an MIM element), and a flat type having an electron emission region composed of a surface conduction type electron emission element It can also be a display device.

When the flat display device is a cold cathode field emission display device, a cold cathode field emission device (hereinafter abbreviated as a field emission device) constituting an electron emission region is provided in the cathode panel,
(A) a strip-shaped cathode electrode formed on the support and extending in the first direction;
(B) an insulating layer formed on the cathode electrode and the support;
(C) a strip-shaped gate electrode formed on the insulating layer and extending in a second direction different from the first direction;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping region where the cathode electrode and the gate electrode overlap, and an exposed portion of the cathode electrode at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening,
Consists of.

  Here, the type of the field emission device is not particularly limited, and a Spindt-type field emission device (a field emission device in which a conical electron emission portion is provided on the cathode electrode located at the bottom of the opening) or a flat type Type field emission device (a field emission device in which a substantially planar electron emission portion is provided on the cathode electrode located at the bottom of the opening).

  In the cathode panel, the projection image of the cathode electrode and the projection image of the gate electrode are orthogonal to each other, that is, the first direction and the second direction are orthogonal to each other in the structure of the cold cathode field emission display device. It is preferable from the viewpoint of simplification. An overlapping region where the cathode electrode and the gate electrode overlap corresponds to an electron emission region, and the electron emission region is arranged in a two-dimensional matrix in the effective region of the cathode panel. A plurality of field emission elements are provided.

  In the cold cathode field emission display, a strong electric field generated by a voltage applied to the cathode electrode and the gate electrode is applied to the electron emission portion, and as a result, electrons are emitted from the electron emission portion by the quantum tunnel effect. The electrons are attracted to the anode panel by the anode electrode provided on the anode panel, and collide with the phosphor layer. As a result of the collision of electrons with the phosphor layer, the phosphor layer emits light and can be recognized as an image.

In the cold cathode field emission display, the cathode electrode is connected to the cathode electrode control circuit, the gate electrode is connected to the gate electrode control circuit, and the anode electrode is connected to the anode electrode control circuit. Note that these control circuits can be constituted by known circuits. During actual operation, the voltage (anode voltage) V _A applied to the anode electrode from the anode electrode control circuit is normally constant, and can be, for example, 5 to 15 kilovolts. Alternatively, when the distance between the anode panel and the cathode panel is d ₀ (where 0.5 mm ≦ d ₀ ≦ 10 mm), the value of V _A / d ₀ (unit: kilovolt / mm) is 0. It is desirable to satisfy 5 or more and 20 or less, preferably 1 or more and 10 or less, and more preferably 4 or more and 8 or less. In actual operation of the cold cathode field emission display, the voltage modulation method can be adopted as the gradation control method for the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode.

A field emission device can be generally manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an insulating layer on the entire surface (on the support and the cathode electrode);
(3) forming a gate electrode on the insulating layer;
(4) forming an opening in a portion of the gate electrode and the insulating layer in a region where the cathode electrode and the gate electrode overlap, and exposing the cathode electrode at the bottom of the opening;
(5) A step of forming an electron emission portion on the cathode electrode located at the bottom of the opening.

Alternatively, the field emission device can be manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an electron emission portion on the cathode electrode;
(3) forming an insulating layer on the entire surface (on the support and the electron emission portion or on the support, the cathode electrode and the electron emission portion);
(4) forming a gate electrode on the insulating layer;
(5) A step of forming an opening in a portion of the gate electrode and the insulating layer in the overlapping region of the cathode electrode and the gate electrode, and exposing the electron emission portion at the bottom of the opening.

  The field emission device may be provided with a focusing electrode. That is, for example, a field emission element in which an interlayer insulating layer is further provided on the gate electrode and the insulating layer, and a focusing electrode is provided on the interlayer insulating layer, or a focusing electrode is provided above the gate electrode. It can also be a field emission device. Here, the focusing electrode is an electrode for converging the trajectory of emitted electrons that are emitted from the opening and directed toward the anode electrode, thereby improving the luminance and preventing optical crosstalk between adjacent pixels. It is. In a so-called high voltage type cold cathode field emission display, the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts or more and the distance between the anode electrode and the cathode electrode is relatively long. The electrode is particularly effective. A relative negative voltage (for example, 0 volts) is applied to the focusing electrode from the focusing electrode control circuit. The focusing electrode does not necessarily have to be individually formed so as to surround each of the electron emission portion or the electron emission region provided in the overlapping region where the cathode electrode and the gate electrode overlap, for example, the electron emission portion or The electron emission region may be extended along a predetermined arrangement direction, or the electron emission portion or the electron emission region may be surrounded by one focusing electrode (that is, the focusing electrode may be a cold cathode field electron). It may be a thin sheet-like structure covering the entire effective area, which is the central display area that performs a practical function as an emission display device), thereby providing a plurality of electron emission areas or electron emission areas. A common convergence effect can be exerted.

  In the Spindt-type field emission device, the material constituting the electron emission portion is molybdenum, molybdenum alloy, tungsten, tungsten alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and And at least one material selected from the group consisting of silicon (polysilicon and amorphous silicon) containing impurities. The electron emission portion of the Spindt-type field emission device can be formed by various PVD methods such as vacuum vapor deposition and sputtering, and various CVD methods.

In the flat field emission device, it is preferable that the material constituting the electron emission portion is composed of a material having a work function Φ smaller than that of the material constituting the cathode electrode. What is necessary is just to determine based on the work function of the material which comprises a cathode electrode, the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emission electron current density requested | required, etc. Alternatively, the material constituting the electron emission portion may be appropriately selected from materials in which the secondary electron gain δ of the material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. In the flat type field emission device, carbon, more specifically, amorphous diamond or graphite, a carbon nanotube structure (carbon nanotube and / or graphite nanofiber), as a particularly preferable constituent material of the electron emission portion, Examples thereof include ZnO whiskers, MgO whiskers, SnO ₂ whiskers, MnO whiskers, Y ₂ O ₃ whiskers, NiO whiskers, ITO whiskers, In ₂ O ₃ whiskers, and Al ₂ O ₃ whiskers. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

The constituent materials of the cathode electrode, gate electrode, and focusing electrode are aluminum (Al), tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), copper (Cu), gold ( Metals such as Au), silver (Ag), titanium (Ti), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn); these metal elements Alloys (eg, MoW) or compounds (eg, nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ); semiconductors such as silicon (Si); carbon thin films such as diamond; ITO ( Examples thereof include conductive metal oxides such as indium oxide-tin oxide, indium oxide, and zinc oxide. In addition, as a method for forming these electrodes, for example, a vapor deposition method such as an electron beam vapor deposition method or a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method, and an etching method; Various printing methods such as a metal mask printing method; plating methods (electroplating method and electroless plating method); lift-off method; laser ablation method; sol-gel method and the like can be mentioned. According to various printing methods and plating methods, for example, a strip-like cathode electrode or gate electrode can be directly formed.

As a material for constituting the insulating layer and the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; polyimide These insulating resins can be used alone or in appropriate combination. For forming the insulating layer or the interlayer insulating layer, a known process such as a CVD method, a coating method, a sputtering method, or various printing methods can be used.

  Planar shape of the first opening (opening formed in the gate electrode) or the second opening (opening formed in the insulating layer) (shape when the opening is cut in a virtual plane parallel to the support surface) ) Can be any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, a rounded polygon. The formation of the first opening can be performed by, for example, anisotropic etching, isotropic etching, a combination of anisotropic etching and isotropic etching, or, depending on the method of forming the gate electrode, The first opening can also be formed directly. The second opening can also be formed by, for example, anisotropic etching, isotropic etching, or a combination of anisotropic etching and isotropic etching.

  In the field emission device, depending on the structure of the field emission device, one electron emission portion may exist in one opening, or a plurality of electron emission portions may exist in one opening. In addition, a plurality of first openings are provided in the gate electrode, one second opening communicating with the first opening is provided in the insulating layer, and one or more are provided in one second opening provided in the insulating layer. There may be an electron emission portion.

In the field emission device, a resistor film may be provided between the cathode electrode and the electron emission portion. By providing the resistor film, the operation of the field emission device can be stabilized and the electron emission characteristics can be made uniform. The material constituting the resistor film includes carbon-based materials such as silicon carbide (SiC) and SiCN, semiconductor materials such as SiN and amorphous silicon, refractory metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride, A refractory metal nitride can be exemplified. Examples of the method for forming the resistor film include a sputtering method, a CVD method, and various printing methods. The electrical resistance value per one electron emitting portion may be approximately 1 × 10 ⁶ to 1 × 10 ¹¹ Ω, preferably several tens of gigaΩ.

As a support constituting the cathode panel or as a substrate constituting the anode panel, a glass substrate, a glass substrate with an insulating film formed on the surface, a quartz substrate, a quartz substrate with an insulating film formed on the surface, and a surface Examples of the semiconductor substrate include an insulating film. From the viewpoint of reducing manufacturing costs, it is preferable to use a glass substrate or a glass substrate having an insulating film formed on the surface. As glass substrates, high strain point glass, low alkali glass, non-alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite ( 2MgO · SiO ₂ ) and lead glass (Na ₂ O · PbO · SiO ₂ ) can be exemplified.

  In the flat display device, examples of the configuration of the anode electrode and the phosphor layer include (1) a configuration in which the anode electrode is formed on the substrate and the phosphor layer is formed on the anode electrode, and (2) on the substrate. The structure which forms a fluorescent substance layer and forms an anode electrode on a fluorescent substance layer can be mentioned. In the configuration (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor layer. In the configuration (2), a metal back film may be formed on the anode electrode.

The anode electrode may be composed of one anode electrode as a whole, or may be composed of a plurality of anode electrode units. In the latter case, it is desirable that the anode electrode unit and the anode electrode unit are electrically connected by an anode electrode resistor layer. The material constituting the anode electrode resistor layer includes carbon-based materials such as carbon, silicon carbide (SiC), and SiCN; SiN-based materials; ruthenium oxide (RuO ₂ ), tantalum oxide, tantalum nitride, chromium oxide, titanium oxide, and the like. Examples thereof include melting point metal oxides and high melting point metal nitrides; semiconductor materials such as amorphous silicon; ITO. Moreover, it is also possible to realize a stable desired sheet resistance value by combining a plurality of films such as laminating a carbon thin film having a low electric resistance value on the SiC resistance film. Examples of the sheet resistance value of the anode electrode resistor layer include 1 × 10 ⁻¹ Ω / □ to 1 × 10 ¹⁰ Ω / □, preferably 1 × 10 ³ Ω / □ to 1 × 10 ⁸ Ω / □. it can. The number (Q) of anode electrode units may be two or more. For example, when the total number of rows of phosphor layers arranged in a straight line is q, Q = q or q = k · Q (K is an integer of 2 or more, preferably 10 ≦ k ≦ 100, more preferably 20 ≦ k ≦ 50), or 1 for the number of spacers (or spacer groups) arranged at a constant interval. It can be an added number, or it can be a number that matches the number of pixels or subpixels, or an integer fraction of the number of pixels or subpixels. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may vary depending on the position of the anode electrode unit. An anode electrode resistor layer may be formed on one anode electrode as a whole.

The anode electrode (including the anode electrode unit) may be formed using a conductive material layer. As a method for forming the conductive material layer, for example, various deposition methods such as electron beam deposition and hot filament deposition, various PVD methods such as sputtering, ion plating, and laser ablation; various CVD methods; various printing methods; metal mask printing Lift-off method; sol-gel method and the like. That is, it is possible to form an anode electrode by forming a conductive material layer made of a conductive material and patterning the conductive material layer based on a lithography technique and an etching technique. Alternatively, the anode electrode can be obtained by forming a conductive material based on the PVD method or various printing methods through a mask or screen having a pattern of the anode electrode. The anode electrode resistor layer can also be formed by the same method. That is, an anode electrode resistor layer may be formed from a resistor material, and the anode electrode resistor layer may be patterned based on a lithography technique and an etching technique, or a mask or a screen having an anode electrode resistor layer pattern. The anode electrode resistor layer can be obtained by forming the resistor material through the PVD method and various printing methods. 3 × 10 ⁻⁸ m (30 nm) to 5 as the average thickness of the anode electrode on the substrate (or above the substrate) (when the partition is provided as described later, the average thickness of the anode electrode on the top surface of the partition) Examples include x10 ⁻⁷ m (0.5 μm), preferably 5 × 10 ⁻⁸ m (50 nm) to 3 × 10 ⁻⁷ m (0.3 μm).

As the constituent material of the anode electrode, molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), niobium (Nb), tantalum (Ta), gold (Au), silver (Ag), titanium (Ti) ), Cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ Silicide such as MoSi ₂ , TiSi ₂ , TaSi ₂ ); Semiconductor such as silicon (Si); Carbon thin film such as diamond; Conductive metal oxide such as ITO (indium oxide-tin oxide), indium oxide, zinc oxide can do. When the anode electrode resistor layer is formed, the anode electrode is preferably made of a conductive material that does not change the electric resistance value of the anode electrode resistor layer. For example, the anode electrode resistor layer is made of silicon carbide (SiC). When comprised, it is preferable to comprise an anode electrode from molybdenum (Mo).

  The phosphor layer may be composed of single-color phosphor particles or may be composed of three primary color phosphor particles. The arrangement pattern of the phosphor layers is, for example, a dot shape. Specifically, when the flat display device is a color display, examples of the arrangement and arrangement of the phosphor layers include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangle arrangement. That is, one line of the phosphor layers arranged in a straight line is occupied by a line occupied by the red light emitting phosphor layer, a line occupied by the green light emitting phosphor layer, and a blue light emitting phosphor layer. It may be comprised from the row | line | column, and it may be comprised from the row | line | column in which the red light emission fluorescent substance layer, the green light emission fluorescent substance layer, and the blue light emission fluorescent substance layer were arrange | positioned in order. Here, the phosphor layer is defined as a phosphor region that generates one bright spot on the anode panel. Further, one pixel (one pixel) is composed of a set of one red light emitting phosphor layer, one green light emitting phosphor layer, and one blue light emitting phosphor layer, and one subpixel is one phosphor. It is composed of layers (one red-emitting phosphor layer, one green-emitting phosphor layer, or one blue-emitting phosphor layer). A gap between adjacent phosphor layers may be filled with a light absorption layer (black matrix) for the purpose of improving contrast.

  The phosphor layer uses a luminescent crystal particle composition prepared from luminescent crystal particles. For example, a red photosensitive luminescent crystal particle composition (red luminescent phosphor slurry) is applied to the entire surface and exposed. And developing to form a red light-emitting phosphor layer, and then applying a green photosensitive light-emitting crystal particle composition (green light-emitting phosphor slurry) to the entire surface, exposing and developing the green light-emitting phosphor. Then, a blue photosensitive luminescent crystal particle composition (blue light emitting phosphor slurry) is applied to the entire surface, exposed and developed to form a blue light emitting phosphor layer. be able to. Alternatively, after sequentially applying the red light emitting phosphor slurry, the green light emitting phosphor slurry, and the blue light emitting phosphor slurry, each phosphor slurry may be sequentially exposed and developed to form each phosphor layer. Each phosphor layer may be formed by a screen printing method, an ink jet printing method, a float coating method, a sedimentation coating method, a phosphor film transfer method, or the like. The average thickness of the phosphor layer on the substrate is not limited, but is preferably 3 μm to 20 μm, preferably 5 μm to 10 μm. The phosphor material constituting the luminescent crystal particles can be appropriately selected from conventionally known phosphor materials. In the case of color display, a phosphor material whose color purity is close to the three primary colors specified by NTSC, white balance is achieved when the three primary colors are mixed, the afterglow time is short, and the afterglow time of the three primary colors is almost equal. It is preferable to combine them.

  The light absorption layer that absorbs light from the phosphor layer is preferably formed between adjacent phosphor layers or between the partition wall and the substrate from the viewpoint of improving the contrast of the display image. Here, the light absorption layer functions as a so-called black matrix. As the material constituting the light absorption layer, it is preferable to select a material that absorbs 90% or more of light from the phosphor layer. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. The light absorption layer depends on the material used, for example, a combination of vacuum deposition method, sputtering method and etching method, a combination of vacuum deposition method, sputtering method, spin coating method and lift-off method, various printing methods, lithography technology, etc. Thus, it can be formed by an appropriately selected method.

  In order to prevent the electrons recoiled from the phosphor layer or the secondary electrons emitted from the phosphor layer from entering other phosphor layers, so-called optical crosstalk (color turbidity) is generated. It is preferable to provide a partition wall.

  Examples of the partition wall forming method include a screen printing method, a dry film method, a photosensitive method, a casting method, and a sandblast forming method. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where a partition is to be formed, and the partition forming material on the screen is passed through the opening using a squeegee, and the partition is formed on the substrate. In this method, after the formation material layer is formed, the partition wall formation material layer is fired. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition wall is to be formed by exposure and development, embedding the partition wall forming material in the opening generated by the removal, and baking. . The photosensitive film is burned and removed by baking, and the partition wall-forming material embedded in the openings remains to form partition walls. The photosensitive method is a method in which a barrier rib-forming material layer having photosensitivity is formed on a substrate, the barrier rib-forming material layer is patterned by exposure and development, and then fired (cured). The casting method (embossing molding method) refers to a method for forming a partition wall forming material layer by extruding a partition wall forming material layer made of a paste-like organic material or inorganic material onto a substrate from a mold (cast). In this method, the partition wall forming material layer is fired. The sand blast forming method is, for example, forming a partition wall forming material layer on a substrate using a screen printing or metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. In this method, the part of the partition wall forming material layer to be covered is covered with a mask layer, and then the exposed part of the partition wall forming material layer is removed by sandblasting. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall.

  As the planar shape of the part surrounding the phosphor layer in the partition wall (corresponding to the inner contour line of the projected image of the partition wall side surface, which is a kind of opening region), rectangular shape, circular shape, elliptical shape, oval shape, triangular shape, Examples include pentagonal or more polygonal shapes, rounded triangular shapes, rounded rectangular shapes, rounded polygons, and the like. By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a grid-like partition is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

Examples of the partition wall forming material include photosensitive polyimide resin, lead glass colored with a metal oxide such as cobalt oxide, SiO ₂ , and a low melting point glass paste. A protective layer (for example, made of SiO ₂ , SiON, or AlN) is provided on the surface (top surface and side surface) of the partition wall to prevent an electron beam from colliding with the partition wall and releasing gas from the partition wall. It may be formed.

  For example, the spacer may be fixed by being sandwiched between partition walls provided in the anode panel, or, for example, a spacer holding portion may be formed on the anode panel and / or the cathode panel and fixed by the spacer holding portion. do it. Alternatively, the spacer and the cathode panel and / or the anode panel can be fixed by frit glass, a low melting point metal, or the like.

When the cathode panel and the anode panel are joined to each other at the peripheral edge by a joining member, the entire joining member can be made of a joining material such as frit glass, or the joining member can be formed in a rod shape or a frame shape (frame shape). A frame made of a rigid material such as glass or ceramic, a bonding material layer provided on a surface of the frame on the cathode panel side, and a bonding material layer provided on a surface of the frame on the anode panel side It can also consist of. By appropriately selecting the height of the frame, it is possible to set the facing distance between the cathode panel and the anode panel longer than in the case where the entire joining member is made of a joining material. As a material constituting the bonding material or the bonding material layer, frit glass such as B ₂ O ₃ —PbO-based frit glass and SiO ₂ —B ₂ O ₃ —PbO-based frit glass is generally used, but the melting point is 120 to 400 °. A so-called low melting point metal material of about C may be used. Such low melting point metal materials include In (indium: melting point 157 ° C.); indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.), Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C.) C) tin (Sn) type high temperature solder such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.), etc. Lead (Pb) high temperature solder; zinc (Zn) high temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322) Tin-lead standard solder such as ° C); brazing material such as Au ₈₈ Ga ₁₂ (melting point 381 ° C) (the above subscripts all represent atomic%).

  When joining the three members of the cathode panel, the anode panel, and the joining member, the three members may be joined at the same time, or in the first stage, either the cathode panel or the anode panel and the joining member are joined, In the second stage, the other of the cathode panel or the anode panel and the joining member may be joined. If the three-party simultaneous bonding or the second stage bonding is performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, and the bonding member becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the cathode panel, the anode panel, and the joining member can be evacuated to create a vacuum. When exhausting after joining, the pressure of the atmosphere at the time of joining may be normal pressure / depressurized, and the gas constituting the atmosphere may be air, or nitrogen gas or group 0 of the periodic table An inert gas containing a gas belonging to (for example, Ar gas) may be used.

  When exhaust is performed, the exhaust can be performed through an exhaust pipe called a tip pipe connected in advance to the cathode panel and / or the anode panel. The exhaust pipe is typically a glass pipe, or a metal or alloy having a low coefficient of thermal expansion [for example, an iron (Fe) alloy containing 42 wt% nickel (Ni), 42 wt% nickel (Ni), An iron (Fe) alloy containing 6% by weight of chromium (Cr)], and an ineffective region of the cathode panel and / or the anode panel (a central portion that performs a practical function as a flat display device) After the space has reached a predetermined degree of vacuum, it is joined to the periphery of the penetrating part provided in the frame surrounding the effective area, which is the display area, using the frit glass or the low melting point metal material. It can be sealed by thermal fusion, or it can be sealed by crimping. In addition, if the whole flat display device is once heated and then cooled before sealing, it is preferable because residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. .

  In the spacer in the flat display device of the present invention, or in the spacer of the present invention, the antistatic film is composed of a plurality of antistatic regions separated by the separation region, and the antistatic film is optional. When cutting along the virtual YZ plane, the cross section of the antistatic film includes the cross section of the separation region. Therefore, the entire spacer is, for example, as if the electrical resistance component of the first antistatic region, the electrical resistance component of a part of the spacer base material, the electrical resistance component of the second antistatic region, and one of the spacer base materials. It can be considered that the electrical resistance component of the portion, the electrical resistance component of the third antistatic region, the partial electrical resistance component of the spacer base material, and so on are connected in series. Therefore, even if the electrical resistance value in a certain antistatic region varies due to the collision of a part of backscattered electrons with the side surface of the spacer, the influence on the variation of the electrical resistance component of the entire spacer can be reduced. Therefore, it is possible to suppress the occurrence of the phenomenon that the electric field distribution near the spacer changes and the electron beam trajectory is curved. As a result, it is possible to suppress a change in luminance characteristics in pixels near the spacer of the flat display device, and it is possible to provide a flat display device having high display quality.

  The effect brought about by the present invention depends on the structure of the spacer and does not depend on the material constituting the spacer. Therefore, it is not necessary to use an expensive material or develop a special material for forming the antistatic film, and it can be realized only by changing the manufacturing process of the spacer. In addition, the formation of the antistatic region and the separation region can be performed by various methods, and an optimal method can be selected according to the required performance and design, so that inexpensive and stable spacer production is possible. It becomes possible.

  Hereinafter, the present invention will be described based on examples with reference to the drawings.

  Example 1 relates to the flat display device of the present invention and the spacer of the present invention. A principle diagram (however, a perspective view) of the spacer of Example 1 is shown in FIG. 1A, and a principle diagram (however, a cross-sectional view) is shown in FIG. FIG. 3 shows a conceptual partial end view of the flat display device of Example 1, and FIGS. 4A and 4B show schematic perspective views and cross-sectional views of the spacer. In FIG. 4A, the antistatic region is hatched to clearly indicate the antistatic region. Also, the number of antistatic regions shown in FIG. 4A is different from the actual value. The flat display device according to the first embodiment is a cold cathode field emission display device (hereinafter abbreviated as a display device), similarly to the display device described in the background art.

  A schematic exploded perspective view of a part of the cathode panel CP and the anode panel AP when the cathode panel CP and the anode panel AP are disassembled in the display device of Example 1 is the same as that shown in FIG.

  The display device of Example 1 includes a cathode panel CP in which a plurality of electron emission areas EA that emit electrons are formed on the support 10, a phosphor layer 22 and an anode on which electrons emitted from the electron emission areas EA collide. An anode panel AP in which the electrode 24 is formed on the substrate 20 is joined at the peripheral edge thereof, and a plate-like spacer 40 is disposed between the cathode panel CP and the anode panel AP. This is a display device in which a space sandwiched between APs is maintained in a vacuum.

When the longitudinal direction of the spacer 40 is the X direction, the thickness direction is the Y direction, and the height direction is the Z direction, the spacer 40 is
(A) the spacer substrate 50, and
(B) an antistatic film 60 formed on the side surface 51 of the spacer base material 50 corresponding to the XZ plane;
Consists of.

  Further, the antistatic film 60 is composed of a plurality of antistatic regions 61 separated by a separation region 62, and when the antistatic film 60 is cut along an arbitrary virtual YZ plane, the antistatic film 60 has a cross section. Includes a cross section of the separation region 62 (see the principle diagram of FIGS. 1A and 1B).

Here, in Example 1, the spacer base material 50 is made of aluminum oxide added with titanium oxide, and the antistatic film 60 is made of CrO _x . More specifically, as shown in FIGS. 4A and 4B, the extending direction of the separation region 62 is substantially parallel to the X direction, and is composed of 19 straight lines having a width. Yes. Furthermore, the number of antistatic regions 61 separated by the separation region 62 is 20 (= N). The height H _n of the antistatic region 61 _n is not more than 0.05 times the height H ₀ of the spacer base material 50. More specifically,
H _n = 0.04H ₀ (however, n = 1~19)
H _n = 0.05H ₀ (where n = 20)
It was. In addition, the width (height, the length along the Z direction) of the separation region 62 was set to 0.01H ₀ . That is, the entire antistatic film 60 is occupied by the antistatic region 61 that satisfies the height regulation of 0 <H / H ₀ ≦ 0.05. Further, the separation region 62 is located on the anode panel side of the side surface portion 51 of the spacer base material 50. When z ₁ is the center position in the Z direction of the first separation region located closest to the anode panel,
z ₁ / H ₀ = 0.045
It is. When the position of the center in the Z direction of the (N-1) th (= 19th) separation region located farthest from the anode panel is z _(N-1) ,
_{z (N-1) / H} 0 = 0.945
It is. Furthermore, when the area of one side surface portion 51 of the spacer base material 50 is S ₀ and the total area of the separation region 62 in the one side surface portion 51 is S ₁ ,
S ₁ / S ₀ = 0.19
It is.

  In such a spacer 40, even if a part of backscattered electrons collides with the side surface of the spacer 40 and the electric resistance value in a certain antistatic region 61 changes, the electric resistance component of the spacer 40 as a whole. Therefore, it is possible to suppress the occurrence of a phenomenon that the electric field distribution in the vicinity of the spacer 40 changes and the electron beam trajectory is curved ((A) in FIG. 6 or FIG. 7). See the conceptual diagram). As a result, it is possible to suppress changes in luminance characteristics in pixels near the spacer of the display device. If the separation region is not provided in the antistatic film, it is difficult to suppress the occurrence of a phenomenon that the electron beam trajectory is curved, as shown in the conceptual diagram of FIG. 7A and 7B show only a part of the antistatic film (resistance change region).

  As shown in FIG. 3, in the cathode panel CP according to the first embodiment, the cathode electrode 11 has a strip shape extending in the first direction (Y direction), and the gate electrode 13 is different from the first direction. It is a strip shape extending in the second direction (X direction). The cathode electrode 11 and the gate electrode 13 are each formed in a strip shape in a direction in which the projected images of both the electrodes 11 and 13 are orthogonal to each other. An overlapping region where the strip-shaped cathode electrode 11 and the strip-shaped gate electrode 13 overlap is an electron emission region EA. The electron emission area EA corresponding to one subpixel is provided with a plurality of field emission elements, and the electron emission areas EA corresponding to one subpixel are arranged in a two-dimensional matrix within the effective area of the cathode panel CP. It is arranged.

  An interlayer insulating layer 16 is formed on the insulating layer 12 and the gate electrode 13, and a focusing electrode 17 is provided thereon. The converging electrode 17 can exert a converging effect common to a plurality of field emission devices. The interlayer insulating layer 16 is provided with a third opening 14C that communicates with the first opening 14A. A through hole (not shown) for evacuation is provided in the ineffective region of the cathode panel CP, and an exhaust pipe (not shown) called a tip tube that is sealed after evacuation is provided in the through hole. It is attached.

In Example 1, the field emission device constituting the electron emission region EA is composed of a Spindt type field emission device. Spindt-type field emission devices
(A) a cathode electrode 11 formed on the support 10;
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a gate electrode 13 formed on the insulating layer 12;
(D) the opening 14 provided in the gate electrode 13 and the insulating layer 12 (the first opening 14A provided in the gate electrode 13 and the second opening 14B provided in the insulating layer 12), and
(E) a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14;
It is composed of

In Example 1, the anode panel AP includes a substrate 20, a phosphor layer 22 formed on the substrate 20, and an anode electrode 24 that covers the phosphor layer 22. More specifically, the anode panel AP is formed on the substrate 20 and the substrate 20 between the partition walls 21 formed on the substrate 20 and the phosphor layer 22 (red color) made of a large number of phosphor particles. A light emitting phosphor layer 22R, a green light emitting phosphor layer 22G, a blue light emitting phosphor layer 22B), and an anode electrode 24 formed on the phosphor layer 22. The anode electrode 24 is made of aluminum (Al) having a thickness of about 0.3 μm, is in the form of a thin sheet that covers the effective area, and is provided so as to cover the partition wall 21 and the phosphor layer 22. Between the phosphor layer 22 and the phosphor layer 22, and between the partition wall 21 and the substrate 20, a light absorption layer (black) is used to prevent the occurrence of color turbidity and optical crosstalk in the display image. Matrix) 23 is formed. The space sandwiched between the cathode panel CP and the anode panel AP is evacuated (pressure: for example, 10 ⁻³ Pa or less).

  FIG. 5 is a schematic plan view for explaining an arrangement state of the partition walls 21, the spacers 40, and the phosphor layer 22 in the display device according to the first embodiment. In FIG. 5, the anode electrode 24 is not shown. The planar shape of the barrier ribs 21 is a lattice shape (cross-beam shape), that is, a shape corresponding to one subpixel, for example, surrounding the four sides of the phosphor layer 22 having a substantially rectangular planar shape. A part of the partition wall 21 also functions as a spacer holding part 25 for holding the spacer 40.

  One subpixel is composed of an electron emission area EA on the cathode panel side and a phosphor layer 22 on the anode panel side facing a group of these field emission elements. In the effective area, pixels (pixels) are arranged in an order of several hundred thousand to several million, for example. In a display device for color display, one pixel (one pixel) is composed of a set of a red light emitting subpixel, a green light emitting subpixel, and a blue light emitting subpixel.

In the first embodiment, the cathode electrode 11 is connected to the cathode electrode control circuit 31, the gate electrode 13 is connected to the gate electrode control circuit 32, the focusing electrode 17 is connected to the focusing electrode control circuit (not shown), and the anode electrode Reference numeral 24 denotes an anode electrode control circuit 33. These control circuits can be constituted by known circuits. During actual operation of the display device, the anode voltage V _A applied from the anode electrode control circuit 33 to the anode electrode 24 is normally constant, for example, 5 to 15 kilovolts, specifically, for example, 9 kilovolts ( For example, d ₀ = 2.0 mm). On the other hand, regarding the voltage V _C applied to the cathode electrode 11 and the voltage V _G applied to the gate electrode 13 during actual operation of the display device,
(1) A method in which the voltage V _C applied to the cathode electrode 11 is constant and the voltage V _G applied to the gate electrode 13 is changed. (2) The voltage V _C applied to the cathode electrode 11 is changed and applied to the gate electrode 13. the voltage V _G for changing the voltage V _C applied to the method (3) a cathode electrode 11, constant, and may employ any method to change the voltage V _G applied to the gate electrode 13.

During actual operation of the display device, a relatively negative voltage (V _C ) is applied to the cathode electrode 11 from the cathode electrode control circuit 31, and a relatively positive voltage (V _G ) is applied to the gate electrode 13 in the gate electrode control circuit. For example, 0 V is applied to the focusing electrode 17 from the focusing electrode control circuit, and a positive voltage (anode voltage V _A ) higher than that of the gate electrode 13 is applied to the anode electrode 24 from the anode electrode control circuit 33. Is done. When performing display in such a display device, for example, a scanning signal is input to the cathode electrode 11 from the cathode electrode control circuit 31, and a video signal is input to the gate electrode 13 from the gate electrode control circuit 32. Note that a video signal may be input to the cathode electrode 11 from the cathode electrode control circuit 31, and a scanning signal may be input to the gate electrode 13 from the gate electrode control circuit 32. Electrons are emitted from the electron emitter 15 based on the quantum tunnel effect due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, and the electrons are attracted to the anode electrode 24. It passes and collides with the phosphor layer 22. As a result, the phosphor layer 22 is excited to emit light, and a desired image can be obtained. That is, the operation of this display device is basically controlled by the voltage V _G applied to the gate electrode 13 and the voltage V _C applied to the cathode electrode 11.

  Hereinafter, the outline of the manufacturing method of the spacer of Example 1 and the manufacturing method of the display device of Example 1 will be described.

[Step-100]
First, a ceramic powder or a metal oxide powder as a conductivity imparting material is used as a dispersoid, and a binder made of an organic material such as an acrylic emulsion or polyvinyl alcohol (PVA) is added to prepare a slurry for a green sheet. For example, the slurry for green sheets is prepared by mixing with a dispersion medium composed of water or the like containing a surfactant.

[Step-110]
Next, a green sheet is obtained from the slurry for the green sheet. Specifically, the green sheet can be obtained by making the prepared slurry for green sheet into a sheet by a blade coating method and sufficiently drying at 100 ° C., but is not limited thereto.

[Step-120]
Thereafter, the green sheet is fired to obtain a plate-shaped ceramic material. Note that the green sheet shrinks by about 20% by the baking treatment. For example, a plate-like ceramic material can be obtained by placing a green sheet on a molybdenum setter and firing it for about 1 hour in an atmosphere of 1650 ° C. and nitrogen: hydrogen = 1: 3. However, the present invention is not limited to this.

[Step-130]
Next, the plate-shaped ceramic material is cut to obtain the spacer base material 50. In Example 1, the dimensions of the spacer base material 50 are 150 mm in the longitudinal direction (X direction in FIG. 3), 0.1 mm in the thickness direction (Y direction in FIG. 3), and the height direction (Z direction in FIG. 3). However, it is not limited to these.

[Step-140]
Thereafter, an antistatic film 60 having a thickness of 2 nm to 20 nm, which is composed of a plurality of antistatic regions 61 separated by the separation region 62, is formed on the side surface portion 51 of the spacer substrate 50. Specifically, the antistatic film 60 is formed on the basis of the sputtering method with a metal mask having an opening provided in a region corresponding to the antistatic region 61.

  Through the above [Step-100] to [Step-140], the spacer 40 of Example 1 including the spacer base material 50 and the antistatic film 60 can be manufactured.

[Step-150]
Next, the display device is assembled. Specifically, the anode panel AP and the cathode panel CP are arranged so that the phosphor layer 22 and the electron emission region EA face each other with the spacer 40 interposed therebetween. The anode panel AP and the cathode panel CP (more specifically, the support body 10 and the substrate 20) are bonded to each other at the peripheral portion via the bonding member 26. For example, when the joining member 26 is composed of a frame and a joining material layer, the joining part between the frame constituting the joining member 26 and the anode panel AP, and the joining between the frame and the cathode panel CP. By applying frit glass to the part, a bonding material layer constituting the bonding member 26 is formed, and after the frit glass is dried by pre-baking, the anode panel AP, the cathode panel CP, and the frame are bonded to each other. The main baking is performed at 450 ° C. for 10 to 30 minutes. In addition, in order to prevent the oxidation etc. by baking, it is desirable to perform this baking in inert gas atmosphere. Thereafter, the space surrounded by the anode panel AP, the cathode panel CP, and the joining member 26 is exhausted through a through hole (not shown) and an exhaust pipe (not shown), so that the pressure in the space becomes about 10 ⁻⁴ Pa. When it reaches, the exhaust pipe is sealed by heat melting or pressure welding. In this way, the space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 26 can be evacuated. Thereafter, wiring with necessary external circuits is performed, and the display device of Example 1 can be completed.

In the display device according to the first embodiment, the voltage V _A applied to the anode electrode 24 is in the range of 6 to 9 kilovolts, and the distance between the electron emission region EA closest to the spacer 40 and the spacer 40 is 100 μm or more. When the distance d ₀ between the cathode panel CP and the anode panel AP was 2 mm or less, the change of the electron beam trajectory was 20 μm or less, and the change of the electron beam trajectory over time could not be visually recognized. Further, since 0 <S ₁ / S ₀ ≦ 0.3 is satisfied, the applied voltage V _A to the anode electrode 24 is set to 9 kilovolts, and the electron emission region EA and the spacer 40 closest to the spacer 40 are And the distance d ₀ between the cathode panel CP and the anode panel AP is 2 mm or less when the driving power of the display device is equivalent to 9 watts and 45 watts. The change of the electron beam trajectory was 20 μm or less, and the positional deviation of the electron beam due to the change of the electric field on the electron beam trajectory accompanying the charging of the spacer could not be visually confirmed.

The second embodiment is a modification of the first embodiment. In the first embodiment, the separation region is provided from the upper portion to the lower portion of the side surface portion 51 of the spacer base member 50. However, in the spacer 40 in the second embodiment, the charging satisfying 0 <H / H ₀ ≦ 0.05. The prevention region 61 is provided only on the anode panel side of the side surface portion 51 of the spacer base material 50. Specifically, as shown in a schematic cross-sectional view in FIG. 8A and a schematic partial side view in FIG. 8B, the extending direction of the separation region 62 is substantially the X direction. It is composed of ten straight lines that are parallel and have a width. Furthermore, the number of antistatic regions 61 separated by the separation region 62 is 11 (= N). In FIG. 8B, FIG. 9B described later, and FIGS. 10 to 13, the antistatic region 61 is hatched to clearly show the antistatic region 61. In Example 2, the antistatic region 61 _n (n = 1 to 10) in which the separation region 62 in contact with the cathode panel side is located on the anode panel side of the side surface portion 51 of the spacer base material 50. ) Satisfies the height specification of 0 <H / H ₀ ≦ 0.05. That is, the height H _n of the first to tenth antistatic regions 61 _n (n = 1 to 10) is not more than 0.05 times the height H ₀ of the spacer base material 50. More specifically,
H _n = 0.04H ₀ (where n = 1 to 10)
H _n = 0.50H ₀ (where n = 11)
It was. In addition, the width (height, the length along the Z direction) of the separation region 62 was set to 0.01H ₀ . The separation region 62 is located on the anode panel side of the side surface portion 51 of the spacer base material 50. When z ₁ is the center position in the Z direction of the first separation region located closest to the anode panel,
z ₁ / H ₀ = 0.045
It is. When the center position in the Z direction of the (N-1) th (= 10th) separation region located farthest from the anode panel is z _(N-1) ,
z _(N-1) / H ₀ = 0.495
It is. Furthermore, when the area of one side surface portion 51 of the spacer base material 50 is S ₀ and the total area of the separation region 62 in the one side surface portion 51 is S ₁ ,
S ₁ / S ₀ = 0.10
It is.

Alternatively, as shown in a schematic cross-sectional view in FIG. 9A and a schematic partial side view in FIG. 9B, the extending direction of the separation region 62 is substantially parallel to the X direction. There are 5 straight lines with width. Furthermore, the number of antistatic regions 61 separated by the separation region 62 is 6 (= N). The height H _n of the first to fifth antistatic regions 61 _n (n = 1 to 5) is not more than 0.05 times the height H ₀ of the spacer base material 50. More specifically,
H _n = 0.04H ₀ (where, n = 1 to 5)
H _n = 0.50H ₀ (where n = 6)
It was. In addition, the width (height, the length along the Z direction) of the separation region 62 was set to 0.01H ₀ . The separation region 62 is located on the anode panel side of the side surface portion 51 of the spacer base material 50. When z ₁ is the center position in the Z direction of the first separation region located closest to the anode panel,
z ₁ / H ₀ = 0.045
It is. When the position of the center in the Z direction of the (N-1) th (= 5th) separation region located farthest from the anode panel is z _(N-1) ,
_{z (N-1) / H} 0 = 0.245
It is. Furthermore, when the area of one side surface portion 51 of the spacer base material 50 is S ₀ and the total area of the separation region 62 in the one side surface portion 51 is S ₁ ,
S ₁ / S ₀ = 0.05
It is.

  Except for the points described above, the spacer 40, the cathode panel CP, the anode panel AP, and the display device of the second embodiment may be the same as the spacer 40, the cathode panel CP, the anode panel AP, and the display device of the first embodiment. Since it can, detailed explanation is omitted.

  The third embodiment is also a modification of the first embodiment. In the third embodiment, as shown in FIG. 2, the principle diagram of the spacer 40 (however, a perspective view), when the antistatic region 61 is cut along an arbitrary virtual XY plane, the cross section of the antistatic region 61 is A cross section of two separation regions 63 is included. Further, the extending direction of the separation region 62 is substantially parallel to the X direction, and the extending direction of the second separation region 63 is substantially parallel to the Z direction. A more specific arrangement state of the antistatic region 61, the separation region 62, and the second separation region 63 in the spacer of the third embodiment is illustrated in partial side views of FIGS.

  Specifically, the separation region 62 is configured by M substantially straight lines having a width extending in the X direction (where M is an integer of 2 or more), and the second separation region 63 is formed in the Z direction. It is composed of M ′ lines (where M ′ is an integer of 2 or more) substantially straight lines having an extending width (length along the X direction).

In the example illustrated in FIGS. 10 and 11, the second separation region 63 adjacent in the Z direction is disposed on a virtual straight line extending in the Z direction. In other words, the antistatic regions 61 having a rectangular planar shape are arranged in a two-dimensional matrix, or are arranged in a grid pattern. Here, in the example shown in FIG. 10, in the antistatic region 61 that satisfies 0 <H / H ₀ ≦ 0.05, a separation region is provided from the upper side to the lower side of the side surface portion 51 of the spacer base material 50. ing. On the other hand, in the example shown in FIG. 11, the antistatic region 61 that satisfies 0 <H / H ₀ ≦ 0.05 is disposed only on the anode panel side of the side surface portion 51 of the spacer base material 50. Further, a second separation region 63 is provided in the antistatic region 61 disposed on the anode panel side of the side surface portion 51 of the spacer base material 50.

On the other hand, in the example shown in FIGS. 12 and 13, the second separation region 63 adjacent in the Z direction is not arranged on an imaginary straight line extending in the Z direction. That is, the antistatic regions 61 having a rectangular planar shape are arranged in a staggered pattern. Here, in the example shown in FIG. 12, in the antistatic region 61 satisfying 0 <H / H ₀ ≦ 0.05, a separation region is provided from the upper side to the lower side of the side surface portion 51 of the spacer base material 50. ing. On the other hand, in the example shown in FIG. 13, the antistatic region 61 that satisfies 0 <H / H ₀ ≦ 0.05 is disposed only on the anode panel side of the side surface portion 51 of the spacer base material 50. Further, a second separation region 63 is provided in the antistatic region 61 disposed on the anode panel side of the side surface portion 51 of the spacer base material 50.

  Except for the points described above, the spacer 40, cathode panel CP, anode panel AP, and display device of the third embodiment may be the same as the spacer 40, cathode panel CP, anode panel AP, and display device of the first embodiment. Since it can, detailed explanation is omitted.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The structure, structure of the spacer, flat display device, cathode panel or anode panel, cold cathode field emission display device or cold cathode field emission device described in the examples are examples, and can be changed as appropriate. Manufacturing methods of spacers, cathode panels and anode panels, cold cathode field emission display devices and cold cathode field emission devices are also exemplary, and can be changed as appropriate. Furthermore, various materials used in the manufacture of spacers, cathode panels, and anode panels are also examples, and can be changed as appropriate. The display device has been described by taking color display as an example, but it may also be a single color display.

  The shape of the spacer is not limited to a plate shape, and may be a columnar shape or a cross shape, for example.

As shown in a schematic perspective view in FIG. 14A, when the shape of the spacer 40A is a column (for example, a column), when the axis of the spacer 40A is the Z axis,
The spacer 40A is
(A) Spacer base material 50A, and
(B) an antistatic film 60A formed on the side surface 51A of the spacer base material 50A;
Consisting of
The antistatic film 60A is composed of a plurality of antistatic regions 61A separated by a separation region 62A.
When the antistatic film 60A is cut along an arbitrary virtual plane including the Z axis, the cross section of the antistatic film 60A includes the cross section of the separation region 62A.

Even in such a columnar spacer, the height of a part or all of the antistatic region is preferably 0.05 times or less the height of the spacer base material, and the separation region has a spacer base. It is desirable to be located on the anode panel side of the side part of the material, or it is preferable that the extending direction of the separation region is included in a direction substantially perpendicular to the Z axis. Further, when the antistatic region is cut along a virtual plane perpendicular to the Z-axis, the cross section of the antistatic region can include the cross section of the second separation region. In this case, the extending direction of the separation region Is included in a direction substantially orthogonal to the Z axis, and the extending direction of the second separation region may be substantially parallel to the Z axis direction. Further, when the area of the side surface portion of the spacer base material is S ₀ , and the total area of the separation regions in the side surface portion is S ₁ ,
0 <S ₁ / S ₀ ≦ 0.3
Is preferably satisfied.

On the other hand, as shown in the schematic perspective view of FIG. 14B, when the shape of the spacer 40B is a cross shape, the extending direction of the first portion 41B of the spacer 40B constituting the vertical bar of the cross is defined as X When the direction, the direction in which the second portion 42B of the spacer 40 constituting the cross bar extends is the Y direction, and the height direction of the spacer is the Z direction,
The spacer 40B
(A) Spacer base material 50B,
(B) the first antistatic film 60B formed on the side surface portion 52B of the first portion 51B of the spacer base material 50B corresponding to the XZ plane, and
(C) a second antistatic film 63B formed on the side surface portion 54B of the second portion 53B of the spacer base material 50B corresponding to the YZ plane;
Consisting of
The first antistatic film 60B is composed of a plurality of first antistatic regions 61B separated by the first separation region 62B.
When the first antistatic film 60B is cut along an arbitrary virtual YZ plane, the cross section of the first antistatic film 60B includes the cross section of the first separation region 62B.
The second antistatic film 63B is composed of a plurality of second antistatic regions 64B separated by the second separation region 65B.
When the second antistatic film 63B is cut along an arbitrary virtual XZ plane, the cross section of the second antistatic film 63B includes the cross section of the second separation region 65B.

In such a cross-shaped spacer, the height of part or all of the first and second antistatic regions is preferably 0.05 times or less the height of the spacer base material. The first and second separation regions are preferably located on the anode panel side of the side surface portion of the spacer base material. Alternatively, the extending direction of the first separation region is substantially parallel to the X direction. The extending direction of the separation region is preferably substantially parallel to the Y direction. Further, when the first antistatic region is cut along the virtual XY plane, the cross section of the first antistatic region includes the cross section of the third separation region, and the second antistatic region is cut along the virtual XY plane. Then, the cross section of the second antistatic region can be configured to include the cross section of the fourth separation region. In this case, the extending direction of the first separation region is substantially parallel to the X direction, The extending direction of the second separation region may be substantially parallel to the Y direction, and the extending direction of the third and fourth separation regions may be approximately parallel to the Z direction. Further, when the area of the side surface portion of the spacer base material is S ₀ and the total area of the first separation region and the second separation region is S ₁ ,
0 <S ₁ / S ₀ ≦ 0.3
Is preferably satisfied.

  In the field emission device, a mode in which one electron emission portion corresponds to one opening has been described. However, depending on the structure of the field emission device, a mode in which a plurality of electron emission portions correspond to one opening. Alternatively, one electron emission portion may correspond to a plurality of openings. Alternatively, a plurality of first openings are provided in the gate electrode, a plurality of second openings connected to the plurality of first openings related to the insulating layer are provided, and one or a plurality of electron emission portions are provided. You can also.

The electron emission region can also be composed of an element commonly called a surface conduction electron-emitting device. This surface conduction electron-emitting device is formed on a support made of glass, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide ( A pair of electrodes made of a conductive material such as (PdO), having a small area and arranged with a predetermined gap (gap) are formed in a matrix. A carbon thin film is formed on each electrode. The row direction wiring is connected to one electrode of the pair of electrodes, and the column direction wiring is connected to the other electrode of the pair of electrodes. By applying a voltage to the pair of electrodes, an electric field is applied to the carbon thin films facing each other across the gap, and electrons are emitted from the carbon thin film. By causing the electrons to collide with the phosphor layer on the anode panel, the phosphor layer is excited to emit light, and a desired image can be obtained. Alternatively, the electron emission region can be formed from a metal / insulating film / metal type element.

FIGS. 1A and 1B are a principle diagram (however, a perspective view) and a principle diagram (however, a sectional view) of the spacer according to the first embodiment. FIG. 2 is a principle diagram (however, a perspective view) of the spacer according to the third embodiment. FIG. 3 is a conceptual partial end view of the flat panel display (cold cathode field emission display) according to the first embodiment. 4A and 4B are a schematic perspective view and a cross-sectional view of the spacer in the first embodiment. FIG. 5 is a schematic plan view for explaining an arrangement state of the partition walls, the spacers, and the phosphor layers in the flat display device according to the first embodiment. FIG. 6 is a diagram for explaining that in the pixel located in the vicinity of the spacer in Example 1, it is possible to minimize the bending of the electron beam trajectory even if the electric resistance characteristic of the antistatic film changes. It is a schematic diagram. FIGS. 7A and 7B schematically illustrate the curved state of the electric field distribution when the electric resistance characteristic of the antistatic film changes in the pixel located in the vicinity of the spacer in Example 1 and the conventional example, respectively. FIG. FIGS. 8A and 8B are a schematic cross-sectional view and a schematic partial side view of the spacer according to the second embodiment. FIGS. 9A and 9B are a schematic cross-sectional view and a schematic partial side view of a spacer according to a modification of the second embodiment. FIG. 10 is a schematic partial side view of the spacer according to the third embodiment. FIG. 11 is a schematic partial side view of a spacer in a modification of the third embodiment. FIG. 12 is a schematic partial side view of a spacer according to another modification of the third embodiment. FIG. 13 is a schematic partial side view of a spacer in still another modified example of the third embodiment. 14A is a schematic perspective view of a columnar (more specifically, columnar) spacer, and FIG. 14B is a schematic perspective view of a cross-shaped spacer. . FIG. 15 is a conceptual partial end view of a conventional cold cathode field emission display having a Spindt-type field emission device. FIG. 16 is a schematic exploded perspective view of a part of the cathode panel and the anode panel when the cathode panel and the anode panel are disassembled. FIGS. 17A and 17B are diagrams schematically showing the trajectory of the electron beam in the pixel located in the vicinity of the spacer. FIG. 18 is a schematic diagram for explaining that the electric field distribution is changed and the electron beam trajectory is bent due to the change in the electric resistance characteristic of the antistatic film in the pixel located in the vicinity of the spacer.

Explanation of symbols

CP ... cathode panel, AP ... anode panel, 10 ... support, 11 ... cathode electrode, 12 ... insulating layer, 13 ... gate electrode, 14, 14A, 14B, 14C ..Opening part, 15... Electron emission part, 16... Interlayer insulating layer, 17... Converging electrode, 18. ..., partition walls, 22, 22R, 22G, 22B ... phosphor layer, 23 ... black matrix, 24 ... anode electrode, 25 ... spacer holding part, 26 ... joining member, 31 ..Cathode electrode control circuit, 32 ... Gate electrode control circuit, 33 ... Anode electrode control circuit, 40, 40A, 40B ... Spacer, 50, 50A, 50B ... Spacer base material, 51, 51A , 51B ... Spacer base material Side portion, 60, 60A, 60B ... antistatic film, 61 and 61a, 61B ... antistatic region, 62, 62A, 62B ... isolation region 63 ... second separation zone

Claims (8)

A cathode panel in which a plurality of electron emission regions for emitting electrons are formed on a support, and an anode panel in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed on a substrate, A flat panel display device in which a space between the cathode panel and the anode panel is held in a vacuum, and a space between the cathode panel and the anode panel is bonded between the peripheral portions, a plate-like spacer is disposed between the cathode panel and the anode panel,
When the longitudinal direction of the spacer is the X direction, the thickness direction is the Y direction, and the height direction is the Z direction,
The spacer
(A) a spacer substrate, and
(B) an antistatic film formed on the side surface of the spacer substrate corresponding to the XZ plane;
Consisting of
The antistatic film is composed of a plurality of antistatic regions separated by a separation region,
A flat display device characterized in that when the antistatic film is cut along an arbitrary virtual YZ plane, the cross section of the antistatic film includes the cross section of the separation region.   The flat display device according to claim 1, wherein the height of a part or all of the antistatic regions is 0.05 times or less the height of the spacer base material.   The flat display device according to claim 1, wherein the separation region is positioned on the anode panel side of the side surface portion of the spacer base material.   2. The flat display device according to claim 1, wherein the extending direction of the separation region is substantially parallel to the X direction.   2. The flat display device according to claim 1, wherein when the antistatic region is cut along a virtual XY plane, the cross section of the antistatic region includes a cross section of the second separation region.   6. The flat display device according to claim 5, wherein the extending direction of the separation region is substantially parallel to the X direction, and the extending direction of the second separation region is substantially parallel to the Z direction. When the area of one side surface portion of the spacer base material is S ₀ and the total area of the separation regions on one side surface portion is S ₁ ,
0 <S ₁ / S ₀ ≦ 0.3
The flat display device according to claim 1, wherein: A cathode panel in which a plurality of electron emission regions for emitting electrons are formed on a support, and an anode panel in which a phosphor layer and an anode electrode with which electrons emitted from the electron emission region collide are formed on a substrate, A plate-like spacer disposed between the cathode panel and the anode panel is used in a flat panel display device in which a space between the cathode panel and the anode panel is held in a vacuum. There,
When the longitudinal direction of the spacer is the X direction, the thickness direction is the Y direction, and the height direction is the Z direction,
(A) a spacer substrate, and
(B) an antistatic film formed on the side surface of the spacer substrate corresponding to the XZ plane;
Consisting of
The antistatic film is composed of a plurality of antistatic regions separated by a separation region,
A spacer characterized in that when the antistatic film is cut along an arbitrary virtual YZ plane, the cross section of the antistatic film includes the cross section of the separation region.

Images