JP2009170280A - Cold cathode field electron emission element manufacturing method and cold cathode field electron emission display device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cold cathode field electron emission element manufacturing method including a method of forming openings in an insulating layer as uniformly as possible in manufacture of the cold cathode field electron emission element. <P>SOLUTION: The cold cathode field electron emission manufacturing method includes the steps of: forming a cathode electrode 11 and the insulating layer 12 on a support 10; disposing many spherical members 40 having core parts 41 and shell parts 42 on the insulating layer 12 and then removing the shell parts 42; forming a gate electrode on the insulating layer 12 including the core parts 41 and then removing the core parts 41 to expose parts of the insulating layer 12; removing the exposed parts of the insulating layer 12 to form the openings and exposing the cathode electrode to the bottoms of the openings; and then forming electron emission parts in the cathode electrode parts exposed to the opening bottoms. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a cold cathode field emission device and a method for manufacturing a cold cathode field emission display.

  In the field of display devices used in television receivers and information terminal equipment, the flat panel type (flat panel) that can meet the demands of thinner, lighter, larger screens and higher definition than the conventional mainstream cathode ray tube (CRT). Type) display devices are rapidly moving. Examples of such a flat display device include a liquid crystal display (LCD), an electroluminescence display (ELD), a plasma display (PDP), and a cold cathode field emission display (FED: field emission display). Can do. Among these, liquid crystal display devices are widely used as display devices for information terminal equipment, but for application to stationary television receivers, there are still problems with high brightness and high-speed response. Yes. On the other hand, a cold cathode field emission display is a cold cathode field emission device (hereinafter, field emission) capable of emitting electrons from a solid into a vacuum based on the quantum tunnel effect without depending on thermal excitation. In some cases, it is called an element), and is attracting attention in terms of high brightness, high-speed response, and low power consumption.

  FIG. 1 shows a configuration example of a cold cathode field emission display device (hereinafter sometimes referred to as a display device) provided with a field emission device. The field emission device shown in the figure is a so-called Spindt type field emission device having a conical electron emission portion. The field emission device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, a gate It comprises an opening 114 provided in the electrode 13 and the insulating layer 12 and a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 114. In FIG. 1, the opening is indicated by reference numeral 14. In general, the cathode electrode 11 and the gate electrode 13 are each formed in a strip shape in a direction in which the projection images of these two electrodes are orthogonal to each other, and an area in which the projection images of these two electrodes overlap (area for one pixel). This region is hereinafter referred to as an electron emission region EA), and a plurality of field emission devices are usually provided. Further, such electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area of the cathode panel CP (area that functions as an actual display portion).

  On the other hand, the anode panel AP includes a substrate 20, a phosphor layer 22 formed on the substrate 20 and having a predetermined pattern, and an anode electrode 23 formed thereon. One pixel or one subpixel faces a group of field emission elements provided in an overlapping area (electron emission area EA) between the cathode electrode 11 and the gate electrode 13 on the cathode panel side, and a group of these field emission elements. And a phosphor layer 22 on the anode panel side. In the effective area, such pixels are arranged on the order of hundreds of thousands to millions, for example. A black matrix 21 is formed on the substrate 20 between the phosphor layer 22 and the phosphor layer 22.

  The display device can be manufactured by arranging the anode panel AP and the cathode panel CP so that the electron emission region EA and the phosphor layer 22 face each other and joining them at the peripheral portion via the joining member 24. . A through-hole 25 for evacuation is provided in an ineffective area (in the illustrated example, the ineffective area of the cathode panel CP) that surrounds the effective area and has a peripheral circuit for selecting a pixel. An exhaust pipe 26 sealed after evacuation is connected to the through hole 25. That is, the space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 24 is a vacuum.

  An outline of a conventional method for manufacturing a field emission device constituting such a display device will be described below with reference to FIGS. This manufacturing method is a manufacturing method disclosed in Japanese Translation of PCT International Publication No. 2000-512067. Basically, the conical electron emission portion 15 is formed by vertical vapor deposition of a metal material. That is, although the vapor deposition particles are incident on the opening 114 perpendicularly, the amount of the vapor deposition particles reaching the bottom of the opening 114 using the shielding effect by the overhanging deposit formed near the opening end. And the electron emission portion 15 which is a conical deposit is formed in a self-aligning manner. Here, a method for forming the peeling layer 16 on the gate electrode 13 in advance in order to easily remove unnecessary overhang-like deposits will be described.

[Step-10]
First, after forming the cathode electrode 11 on the support 10 made of, for example, a glass substrate, the insulating layer 12 and the gate electrode 13 are formed thereon. Then, spheres 118 made of polystyrene are dispersed on the insulating layer 12 including the gate electrode 13. Next, after a resist layer 119 is formed over the entire surface (see FIG. 13A), an opening is provided in the resist layer by removing the sphere 118 (see FIG. 13B). Thereafter, the gate electrode 13 exposed at the bottom of the opening of the resist layer is etched, and further, the insulating layer 12 below the portion of the gate electrode 13 is etched, so that the opening 114 is formed in the gate electrode 13 and the insulating layer 12. (See FIG. 13C). In these etching steps, the resist layer is removed.

  Instead of such steps, the following method is also disclosed in JP 2000-512067. That is, for example, after forming a cathode electrode on a support made of a glass substrate, an insulating layer is formed thereon. Next, after the spheres are dispersed over the entire surface, the gate electrode 13 and the primary layer are sequentially formed on the insulating layer including the spheres. Then, an opening is provided in the primary layer and the gate electrode by removing the sphere. Thereafter, the insulating layer exposed at the bottom of the opening is etched to form openings in the primary layer, the gate electrode, and the insulating layer. The primary layer functions as a release layer described below.

[Step-20]
Then, following FIG. 13C, as shown in FIG. 14A, a release layer 16 is formed on the gate electrode 13 and the insulating layer 12 based on an oblique deposition method. At this time, by selecting a sufficiently large incident angle of the vapor-deposited particles with respect to the normal of the support 10, the top surface of the gate electrode 13 and the insulating layer 12 is hardly deposited on the bottom surface of the opening 114. The release layer 16 can be formed. The release layer 16 protrudes from the opening end of the opening 114 in a bowl shape, and thereby the opening 114 is substantially reduced in diameter.

[Step-30]
Next, for example, a conductive material layer 17 is vertically deposited on the entire surface. At this time, as shown in FIG. 14B, as the conductive material layer 17 having an overhang shape grows on the peeling layer 16, the substantial diameter of the opening 114 is gradually reduced. The vapor deposition particles contributing to the deposition at the bottom of the portion 114 are limited to those gradually passing near the center of the opening 114. As a result, a conical deposit is formed at the bottom of the opening 114, and this conical deposit becomes the electron emitting portion 15.

[Step-40]
Thereafter, as shown in FIG. 14C, the peeling layer 16 is peeled off from the surfaces of the gate electrode 13 and the insulating layer 12 by an electrochemical process and a wet process based on a so-called lift-off method. The conductive material layer 17 above 12 is selectively removed.

Special table 2000-512067

  By the way, the electron emission characteristic of the field emission device having the structure shown in FIG. 14B is that the edge of the gate electrode 13 (opening end 13A) forming the upper end of the opening 114 is the tip of the electron emitting portion 15. It depends greatly on the distance. This distance greatly depends on the processing accuracy of the shape of the opening 114. In other words, it depends greatly on the accuracy of the sphere dispersion. In addition, when the spheres are dispersed, if the state of being separated into individual spheres is not obtained, that is, if two, three, or more spheres overlap each other, the final Thus, the shape of the opening 114 obtained is greatly deformed.

  Accordingly, an object of the present invention is to provide a method for manufacturing a cold cathode field emission device including a method capable of forming openings in an insulating layer as uniformly as possible when manufacturing a cold cathode field emission device, and such a cold cathode. An object of the present invention is to provide a method of manufacturing a cold cathode field emission display including a method of manufacturing a field electron emission device.

In order to achieve the above object, a method for manufacturing a cold cathode field emission device according to the first aspect of the present invention comprises:
(A) After forming the cathode electrode on the support,
(B) forming an insulating layer on a support including on the cathode electrode;
(C) After disposing a plurality of spherical members having a core portion and a shell portion formed on the outer surface of the core portion on the insulating layer, removing the shell portion of each spherical member;
(D) After forming the gate electrode on the insulating layer including the core portion of the spherical member, the core portion is removed to expose a part of the insulating layer;
(E) An exposed portion of the insulating layer is removed to form an opening, the cathode electrode is exposed at the bottom of the opening, and then an electron emitting portion is formed at the portion of the cathode electrode exposed at the bottom of the opening To
It consists of each process.

Moreover, the manufacturing method of the cold cathode field emission device according to the second aspect of the present invention for achieving the above-described object is as follows:
(A) After forming the cathode electrode on the support,
(B) After forming an insulating layer on a support including the cathode electrode and forming a gate electrode on the insulating layer,
(C) A large number of spherical members having a core part and a shell part formed on the outer surface of the core part are disposed on the insulating layer including the gate electrode, and then the shell part of each spherical member is removed;
(D) After forming the sacrificial layer on the insulating layer and the gate electrode including the core part of the spherical member, the core part is removed to expose a part of the gate electrode,
(E) The exposed portion of the gate electrode is removed, an opening is formed in the insulating layer, the cathode electrode is exposed at the bottom of the opening, and then the cathode electrode exposed at the bottom of the opening is formed. Forming an electron emitter and then removing the sacrificial layer;
It consists of each process.

In order to achieve the above object, a manufacturing method of a cold cathode field emission display device according to the first aspect of the present invention includes a cathode panel in which an electron emission region is provided on a support, a phosphor layer, and an anode electrode. And a cathode cathode electron emission display device manufacturing method in which a space sandwiched between the cathode panel and the anode panel is maintained in a vacuum.
The electron emission region,
(A) After forming the cathode electrode on the support,
(B) forming an insulating layer on a support including on the cathode electrode;
(C) After disposing a plurality of spherical members having a core portion and a shell portion formed on the outer surface of the core portion on the insulating layer, removing the shell portion of each spherical member;
(D) After forming the gate electrode on the insulating layer including the core portion of the spherical member, the core portion is removed to expose a part of the insulating layer;
(E) An exposed portion of the insulating layer is removed to form an opening, the cathode electrode is exposed at the bottom of the opening, and then an electron emitting portion is formed at the portion of the cathode electrode exposed at the bottom of the opening To
It forms based on each process, It is characterized by the above-mentioned.

In addition, a manufacturing method of a cold cathode field emission display device according to the second aspect of the present invention for achieving the above object includes a cathode panel in which an electron emission region is provided on a support, a phosphor layer, A manufacturing method of a cold cathode field emission display device in which an anode panel provided with an anode electrode is joined at an outer periphery, and a space sandwiched between the cathode panel and the anode panel is maintained in a vacuum,
The electron emission region,
(A) After forming the cathode electrode on the support,
(B) After forming an insulating layer on a support including the cathode electrode and forming a gate electrode on the insulating layer,
(C) A large number of spherical members having a core part and a shell part formed on the outer surface of the core part are disposed on the insulating layer including the gate electrode, and then the shell part of each spherical member is removed;
(D) After forming the sacrificial layer on the insulating layer and the gate electrode including the core part of the spherical member, the core part is removed to expose a part of the gate electrode,
(E) The exposed portion of the gate electrode is removed, an opening is formed in the insulating layer, the cathode electrode is exposed at the bottom of the opening, and then the cathode electrode exposed at the bottom of the opening is formed. Forming an electron emitter and then removing the sacrificial layer;
It forms based on each process, It is characterized by the above-mentioned.

  A method for manufacturing a cold cathode field emission device according to the first aspect and the second aspect of the present invention, a method for manufacturing a cold cathode field emission display device according to the first aspect and the second aspect of the present invention (these methods) In the following, the core portion is made of a ceramic material, a metal material or an alloy material, and the shell portion is made of an organic material. Can do.

  Further, in the present invention including the above-described preferable configuration, the removal of the shell portion of each spherical member in the step (C) is preferably based on combustion, but is not limited thereto, and broadly the state of the shell portion. It is preferable to remove the shell part by change and / or chemical change. Here, the state change and / or chemical change of the shell portion means changes such as combustion, sublimation, decomposition, carbonization, or a combination thereof. For example, when the shell portion is made of an organic material, it is preferable to remove the shell portion by burning as described above. Alternatively, the shell portion can be removed by, for example, an ashing method. Normally, the core part does not separate (separate) from the insulating layer or the gate electrode by removing the shell part.

  Furthermore, in the present invention including the preferred configuration described above, the removal of the core portion in the step (D) is preferably based on mechanical removal using a brush, but is not limited to this. For example, methods such as removal by vibration, removal by high-pressure jet water flow, and removal by wet etching can be used.

Furthermore, in the present invention including the preferred structure described above, the average diameter D _C of the core portion is 8 × 10 ⁻⁸ m to 2 × 10 ⁻⁷ m, preferably 1 × 10 ⁻⁷ m to 1. 5 × a 10 ^-7 m, the average diameter D _S of the shell portion, 2 × 10 ^-7 m to 6 × 10 ^-7 m, preferably, is 3 × 10 ^-7 m to 5 × 10 ^-7 m It can be in the form. Alternatively, it is desirable that 2 ≦ D _S / D _C ≦ 6, preferably 3 ≦ D _S / D _C ≦ 5. When the average thickness of the insulating layer is t _I , 0.6 ≦ t _I / (D _S −D _C ) ≦ 1.2, preferably 0.7 ≦ t _I / (D _S −D _C ) ≦ 1.0 is desirable.

Furthermore, preferred configuration described above, in the present invention including the embodiment, when the average thickness of the gate electrode t _G, the average thickness of the sacrificial layer t _S, the average diameter of the core portion was D _C, 0 0.2 ≦ t _G / D _C ≦ 1.0, preferably 0.3 ≦ t _G / D _C ≦ 0.5, and 0.1 ≦ t _S / D _C ≦ 0.6, preferably Preferably satisfies 0.3 ≦ t _S / D _C ≦ 0.4.

Furthermore, in the present invention including the preferred configurations and forms described above, the average arrangement density of the spherical members on the insulating layer or the insulating layer including the gate electrode is 1 × 10 ⁶ / mm ^{2 to} 1 × 10 ⁷ pieces / mm ² , preferably 3 × 10 ⁶ pieces / mm ^{2 to} 5 × 10 ⁶ pieces / mm ² is desirable.

In the present invention, examples of the ceramic material constituting the core part include glass, silica (SiO ₂ ), and polystyrene. Examples of the metal material and alloy material include Ni, Zn, Fe, Au, Ag, Ti, Pt, and the like. In addition to these alloys, TiO ₂ , BaSO ₄ , and AgI can be mentioned. Moreover, the organic material which comprises a shell part is although it does not specifically limit, A general purpose polymeric material is suitable. However, in the case of a polymer material having an extremely high degree of polymerization or an extremely high content of multiple bonds, for example, the combustion temperature becomes too high, and the cathode electrode, insulating layer, and gate electrode are adversely affected when the sphere is removed by combustion. There is a risk. Therefore, it is preferable to select a polymer material that can be combusted or carbonized at a temperature at which there is no risk of adverse effects on these. More specifically, the combustion temperature of the shell portion is preferably about 350 to 500 ° C. Typical polymer materials include styrene, urethane, acrylic, vinyl, divinylbenzene, melamine, formaldehyde, and polymethylene homopolymers or copolymers.

As a method for arranging the spherical members, a solution in which the spherical members are dispersed in an appropriate solvent is applied by a spin coating method; a printing method such as a screen printing method or an ink jet printing method; an air doctor coater method, a blade coater method, or a rod coater method. Various coating methods such as knife coater method, squeeze coater method, reverse roll coater method, transfer roll coater method, gravure coater method, kiss coater method, cast coater method, spray coater method, slit orifice coater method, calendar coater method, dipping method; An example is a method of drying after coating based on a stamp method or the like. Alternatively, for example, a solution in which a spherical member is dispersed in an appropriate solvent is applied onto a supporting material composed of a film or a sheet, and after drying, the spherical member on the supporting material is applied in an appropriate manner ( For example, it may be arranged on the insulating layer or on the insulating layer including the gate electrode by a thermal transfer method). The spherical members are ideally arranged with close packing. That is, ideally, all of the finally obtained opening, virtual equilateral triangle [length of one side is D _S] located at the apex of the. However, in reality, 10% or more of the finally obtained opening is located at the apex of a virtual equilateral triangle [the length of one side is in the range of 0.5 × D _{S to} D _S ]. It is preferable to do.

  As a cold cathode field emission device (hereinafter abbreviated as a field emission device) in the present invention, a Spindt-type field emission device (a conical electron emission portion is provided on a cathode electrode located at the bottom of an opening). Field emission device), but is not limited thereto, and a field emission device having any configuration and structure may be used. Here, as a material constituting the electron emission portion, molybdenum, molybdenum alloy, tungsten, tungsten alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and silicon containing impurities ( And at least one material selected from the group consisting of polysilicon and amorphous silicon. The electron emission portion of the Spindt-type field emission device can be formed by various physical vapor deposition methods (PVD method) such as sputtering method and vacuum deposition method, and various chemical vapor deposition methods (CVD method).

  In the cathode panel, the projection image of the cathode electrode and the projection image of the gate electrode are preferably orthogonal from the viewpoint of simplifying the structure of the cold cathode field emission display. The overlapping region where the cathode electrode and the gate electrode overlap corresponds to the electron emission region, and the electron emission region is arranged in a two-dimensional matrix in the effective region of the cathode panel.

  In the cold cathode field emission display, a strong electric field generated by a voltage applied to the cathode electrode and the gate electrode is applied to the electron emission portion, and as a result, electrons are emitted from the electron emission portion by the quantum tunnel effect. The electrons are attracted to the anode panel by the anode electrode provided on the anode panel, and collide with the phosphor layer. As a result of the collision of electrons with the phosphor layer, the phosphor layer emits light and can be recognized as an image.

In the cold cathode field emission display, the cathode electrode is connected to the cathode electrode control circuit, the gate electrode is connected to the gate electrode control circuit, and the anode electrode is connected to the anode electrode control circuit. Note that these control circuits can be constituted by known circuits. During actual operation, the voltage (anode voltage) V _A applied to the anode electrode from the anode electrode control circuit is normally constant, and can be, for example, 5 to 15 kilovolts. Alternatively, when the distance between the anode panel and the cathode panel is d ₀ (where 0.5 mm ≦ d ₀ ≦ 10 mm), the value of V _A / d ₀ (unit: kilovolt / mm) is 0. It is desirable to satisfy 5 or more and 20 or less, preferably 1 or more and 10 or less, and more preferably 4 or more and 8 or less. In actual operation of the cold cathode field emission display, with respect to the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode, a voltage modulation method or a pulse width modulation method can be adopted as a gradation control method. it can.

  The field emission device may be provided with a focus electrode. That is, for example, a field emission element in which an interlayer insulating layer is further provided on the gate electrode and the insulating layer, and a focus electrode is provided on the interlayer insulating layer, or a focus electrode is provided above the gate electrode. It can also be a field emission device. Here, the focus electrode is an electrode for converging the trajectory of emitted electrons that are emitted from the opening and directed toward the anode electrode. In a so-called high voltage type cold cathode field emission display, the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts or more and the distance between the anode electrode and the cathode electrode is relatively long. The electrode is particularly effective. By increasing the convergence of the emitted electron trajectory, the optical crosstalk between the pixels is reduced, and the pixels can be miniaturized to increase the definition of the display screen. A relative negative voltage (for example, 0 volt) is applied to the focus electrode from the focus electrode control circuit. The focus electrode does not necessarily have to be individually formed so as to surround each of the electron emission portion or the electron emission region provided in the overlapping region where the cathode electrode and the gate electrode overlap, for example, the electron emission portion or The electron emission region may be extended along a predetermined arrangement direction, or the electron emission portion or the electron emission region may be surrounded by one focus electrode (that is, the focus electrode may be a cold cathode field electron). It may be a thin sheet-like structure covering the entire effective area, which is the central display area that performs a practical function as an emission display device), thereby providing a plurality of electron emission areas or electron emission areas. A common convergence effect can be exerted.

As materials constituting the gate electrode, cathode electrode, and focus electrode, tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), aluminum (Al), titanium (Ti), gold (Au), copper (Cu), silver (Ag), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn) and other metals; these metals Alloys containing elements (eg MoW) or compounds (eg TiW; nitrides such as TiN and WN; silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ and TaSi ₂ ); semiconductors such as silicon (Si); diamonds etc. Carbon thin film: Examples of conductive metal oxides such as ITO (indium oxide-tin), indium oxide, and zinc oxide. The gate electrode, the cathode electrode, and the focus electrode can have a single layer structure or a stacked structure of these materials. Examples of the material constituting the sacrificial layer include SiO ₂ and polymer resin materials.

  The manufacturing method of the cold cathode field emission device according to the first aspect of the present invention including the preferred configuration described above or the manufacturing method of the cold cathode field emission display device according to the first aspect of the present invention (hereinafter, “ In the manufacturing method according to the first aspect of the present invention, ”a gate electrode may be obtained by forming a gate electrode and then patterning in a strip shape, or when forming the gate electrode, A band-shaped gate electrode may be obtained by forming it in a band shape. That is, in the manufacturing method of the first aspect of the present invention, after forming the gate electrode on the insulating layer including the core portion of the spherical member, the core portion is removed to expose a part of the insulating layer, and then the gate The electrode may be patterned to provide a strip-shaped gate electrode, or the strip-shaped gate electrode may be formed on the insulating layer including the core portion of the spherical member. On the other hand, the manufacturing method of the cold cathode field emission device according to the second aspect of the present invention including the preferred configuration described above or the manufacturing method of the cold cathode field emission display device according to the second aspect of the present invention (hereinafter referred to as the following) In the step (C), after exposing a part of the insulating layer and the gate electrode, the gate electrode is patterned into a strip shape in the step (C). A band-shaped gate electrode may be obtained, or when forming the gate electrode on the insulating layer in the step (B), the band-shaped gate electrode may be formed. In the step (B), the band-shaped gate electrode may be formed. After forming the gate electrode, the gate electrode may be patterned into a strip shape to obtain a strip-shaped gate electrode.

  In the manufacturing method according to the first aspect of the present invention, the gate electrode is formed on the insulating layer including the core portion of the spherical member, and the gate electrode portion on the core portion of the spherical member and the gate electrode of the insulating layer are formed. The portion of the gate electrode located in the boundary region with the portion of the core portion can be easily obtained at least partially discontinuous or at least partially thinned. In addition, it is desirable from the viewpoint of sure removal. In the manufacturing method according to the second aspect of the present invention, the sacrificial layer is formed on the insulating layer including the core part of the spherical member and the gate electrode. The sacrificial layer portion located in the boundary region with the sacrificial layer portion on the gate electrode should be at least partially discontinuous, or at least partially thin. However, it is desirable from the viewpoint of easily and reliably removing the core portion. As a method for forming a gate electrode in the manufacturing method of the first aspect of the present invention and a method for forming a sacrificial layer in the manufacturing method of the second aspect of the present invention, vacuum deposition methods such as electron beam deposition and hot filament deposition, sputtering The law can be mentioned.

  As a method for forming the gate electrode in the manufacturing method according to the second aspect of the present invention, the cathode electrode and the focus electrode in the present invention, for example, a vacuum deposition method such as an electron beam deposition method or a hot filament deposition method, a sputtering method, an ion plate Various PVD methods including coating methods, combinations of various CVD methods and etching methods; various printing methods such as screen printing methods, ink jet printing methods, metal mask printing methods; plating methods (electroplating methods and electroless plating methods); lift-off methods Laser ablation method; sol-gel method and the like. According to various printing methods and plating methods, for example, a strip-shaped cathode electrode can be directly formed.

As a material for constituting the insulating layer and the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; polyimide These insulating resins can be used alone or in appropriate combination. Known processes such as various CVD methods, coating methods, sputtering methods, and various printing methods can be used to form the insulating layer and the interlayer insulating layer.

  The planar shape of the opening formed in the insulating layer (the shape when the opening is cut in a virtual plane parallel to the support surface) is the cross-sectional shape of the core (when cut in the virtual plane parallel to the support surface) The cross-sectional shape), or substantially the same shape, or a similar shape, specifically, a circular shape. The opening can be formed by, for example, anisotropic etching, isotropic etching, or a combination of anisotropic etching and isotropic etching.

In the field emission device, a resistor film may be provided between the cathode electrode and the electron emission portion. By providing the resistor film, the operation of the field emission device can be stabilized, the electron emission characteristics can be made uniform, and the leakage current between the cathode electrode and the gate electrode can be suppressed. Examples of the material constituting the resistor film include carbon-based materials such as silicon carbide (SiC) and SiCN, semiconductor materials such as SiN and amorphous silicon, refractory metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride, A refractory metal nitride can be exemplified. Examples of the method for forming the resistor film include a sputtering method, various CVD methods, and various printing methods. The electric resistance value per one electron emitting portion may be about 1 × 10 ⁵ to 1 × 10 ¹¹ Ω, preferably several MΩ to several tens of gigaΩ.

The substrate that constitutes the cathode panel or the substrate that constitutes the anode panel only needs to be formed of an insulating member on the surface where these substrates oppose each other, and an insulating coating is formed on the glass substrate and the surface. Glass substrate, quartz substrate, quartz substrate having an insulating film formed on the surface, and semiconductor substrate having an insulating film formed on the surface. From the viewpoint of reducing the manufacturing cost, the glass substrate or the surface may be provided. It is preferable to use a glass substrate on which an insulating film is formed. As glass substrates, high strain point glass, low alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite (2MgO · SiO ₂₎ ), Lead glass (Na ₂ O · PbO · SiO ₂ ), and alkali-free glass.

In the cold cathode field emission display, as a configuration example of the anode electrode and the phosphor layer,
(1) Configuration in which an anode electrode is formed on a substrate and a phosphor layer is formed on the anode electrode (2) Configuration in which a phosphor layer is formed on the substrate and an anode electrode is formed on the phosphor layer Can be mentioned. In the configuration (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor layer. In the configuration (2), a metal back film may be formed on the anode electrode. The metal back film itself may have a function as an anode electrode.

The anode electrode may be composed of one anode electrode as a whole, or may be composed of a plurality of anode electrode units. In the latter case, it is desirable that the anode electrode unit and the anode electrode unit are electrically connected by an anode electrode resistor layer. As a material constituting the anode electrode resistor layer, carbon, carbon carbide (SiC), SiCN, and other carbon materials; SiN materials; ruthenium oxide (RuO ₂ ), tantalum oxide, tantalum nitride, chromium oxide, titanium oxide, etc. Examples thereof include melting point metal oxides and high melting point metal nitrides; semiconductor materials such as amorphous silicon; ITO. It is also possible to achieve a stable desired sheet resistance value by combining a plurality of films such as laminating a carbon thin film having a low resistance value on the SiC resistance film. Examples of the sheet resistance value of the anode electrode resistor layer include 1 × 10 ⁻¹ Ω / □ to 1 × 10 ¹⁰ Ω / □, preferably 1 × 10 ³ Ω / □ to 1 × 10 ⁸ Ω / □. it can. The number (Q) of anode electrode units may be two or more. For example, when the total number of phosphor layers arranged in a straight line is q, Q = q or q = k · Q (K is an integer of 2 or more, preferably 10 ≦ k ≦ 100, more preferably 20 ≦ k ≦ 50), or a number obtained by adding 1 to the number of spacers arranged at a constant interval. It can be a number that matches the number of pixels or subpixels, or it can be an integer fraction of the number of pixels or subpixels. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may be different depending on the position of the anode electrode unit. An anode electrode resistor layer may be formed on one anode electrode as a whole.

The anode electrode (including the anode electrode unit) may be formed using a conductive material layer. As a method for forming the conductive material layer, for example, vacuum deposition methods such as electron beam deposition method and hot filament deposition method, various PVD methods such as sputtering method, ion plating method and laser ablation method; various CVD methods; various printing methods; metal mask Examples thereof include printing methods; lift-off methods; sol-gel methods. That is, it is possible to form an anode electrode by forming a conductive material layer made of a conductive material and patterning the conductive material layer based on a lithography technique and an etching technique. Alternatively, the anode electrode can be obtained by forming a conductive material based on various PVD methods or various printing methods through a mask or screen having an anode electrode pattern. The anode electrode resistor layer can also be formed by the same method. That is, an anode electrode resistor layer may be formed from a resistor material, and the anode electrode resistor layer may be patterned based on a lithography technique and an etching technique, or a mask or a screen having an anode electrode resistor layer pattern. The anode electrode resistor layer can be obtained by forming the resistor material through various PVD methods and various printing methods. 3 × 10 ⁻⁸ m (30 nm) to 1 as the average thickness of the anode electrode on the substrate (or above the substrate) (when the partition is provided as described later, the average thickness of the anode electrode on the top surface of the partition) Examples include x10 ⁻⁶ m (1 μm), preferably 5 × 10 ⁻⁸ m (50 nm) to 5 × 10 ⁻⁷ m (0.5 μm).

As the constituent material of the anode electrode, molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), niobium (Nb), tantalum (Ta), gold (Au), silver (Ag), titanium (Ti) ), Cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi _2, etc.); silicon (Si), semiconductors; diamond, graphite and other carbon thin films; ITO (indium oxide-tin), indium oxide, zinc oxide, etc., conductive metal oxides Can be illustrated. When the anode electrode resistor layer is formed, the anode electrode is preferably made of a conductive material that does not change the electric resistance value of the anode electrode resistor layer. For example, the anode electrode resistor layer is made of silicon carbide (SiC). When comprised, it is preferable to comprise an anode electrode from molybdenum (Mo) or aluminum (Al).

  The phosphor layer may be composed of single-color phosphor particles or may be composed of three primary color phosphor particles. The arrangement pattern of the phosphor layers is, for example, a dot shape. Specifically, when the cold cathode field emission display device performs color display, examples of the arrangement and arrangement of the phosphor layers include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangle arrangement. That is, one row of the phosphor layers arranged on a straight line is occupied by the row occupied by the red light emitting phosphor layer, the row occupied by the green light emitting phosphor layer, and the blue light emitting phosphor layer. It may be comprised from the row | line | column, and it may be comprised from the row | line | column in which the red light emission fluorescent substance layer, the green light emission fluorescent substance layer, and the blue light emission fluorescent substance layer were arrange | positioned in order. Here, the phosphor layer is defined as a phosphor region that generates one bright spot in the cold cathode field emission display. Further, one pixel (one pixel) is composed of a set of one red light emitting phosphor layer, one green light emitting phosphor layer, and one blue light emitting phosphor layer, and one subpixel is one phosphor. It is composed of layers (one red-emitting phosphor layer, one green-emitting phosphor layer, or one blue-emitting phosphor layer). A gap between adjacent phosphor layers may be filled with a light absorption layer (black matrix) for the purpose of improving contrast.

  The phosphor layer uses a luminescent crystal particle composition prepared from luminescent crystal particles. For example, a red photosensitive luminescent crystal particle composition (red luminescent phosphor slurry) is applied to the entire surface and exposed. And developing to form a red light-emitting phosphor layer, and then applying a green photosensitive light-emitting crystal particle composition (green light-emitting phosphor slurry) to the entire surface, exposing and developing the green light-emitting phosphor. Then, a blue photosensitive luminescent crystal particle composition (blue light emitting phosphor slurry) is applied to the entire surface, exposed and developed to form a blue light emitting phosphor layer. be able to. Alternatively, each phosphor layer may be formed by a screen printing method, an ink jet printing method, a float coating method, a sedimentation coating method, a phosphor film transfer method, or the like. The average thickness of the phosphor layer on the substrate is not limited, but is preferably 3 μm to 20 μm, preferably 5 μm to 10 μm. The phosphor material constituting the luminescent crystal particles can be appropriately selected from conventionally known phosphor materials. In the case of color display, a phosphor material whose color purity is close to the three primary colors specified by NTSC, white balance is achieved when the three primary colors are mixed, the afterglow time is short, and the afterglow time of the three primary colors is almost equal. It is preferable to combine them.

  The light absorption layer that absorbs light from the phosphor layer is preferably formed between adjacent phosphor layers or between a partition wall and a substrate, which will be described later, from the viewpoint of improving the contrast of the display image. Here, the light absorption layer functions as a so-called black matrix. As the material constituting the light absorption layer, it is preferable to select a material that absorbs 90% or more of light from the phosphor layer. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. The light absorption layer depends on the material used, for example, a combination of a vacuum deposition method, a sputtering method and an etching method, a combination of a vacuum deposition method, a sputtering method, a spin coating method and a lift-off method, various printing methods, a lithography technique, etc. Thus, it can be formed by an appropriately selected method.

  In order to prevent the electrons recoiled from the phosphor layer or the secondary electrons emitted from the phosphor layer from entering other phosphor layers, so-called optical crosstalk (color turbidity) is generated. It is preferable to provide a partition wall. Examples of the partition wall forming method include a screen printing method, a dry film method, a photosensitive method, a casting method, and a sandblast forming method. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where a partition is to be formed, and the partition forming material on the screen is passed through the opening using a squeegee, and the partition is formed on the substrate. In this method, after the formation material layer is formed, the partition wall formation material layer is fired. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition wall is to be formed by exposure and development, embedding the partition wall forming material in the opening generated by the removal, and baking. . The photosensitive film is burned and removed by baking, and the partition wall-forming material embedded in the openings remains to form partition walls. The photosensitive method is a method in which a barrier rib-forming material layer having photosensitivity is formed on a substrate, the barrier rib-forming material layer is patterned by exposure and development, and then fired (cured). The casting method (embossing molding method) refers to a method for forming a partition wall forming material layer by extruding a partition wall forming material layer made of a paste-like organic material or inorganic material onto a substrate from a mold (cast). In this method, the partition wall forming material layer is fired. The sand blast forming method is, for example, forming a partition wall forming material layer on a substrate using a screen printing or metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. In this method, the part of the partition wall forming material layer to be covered is covered with a mask layer, and then the exposed part of the partition wall forming material layer is removed by sandblasting. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall.

  As the planar shape of the part surrounding the phosphor layer in the partition wall (corresponding to the inner contour line of the projected image of the partition wall side surface, which is a kind of opening region), rectangular shape, circular shape, elliptical shape, oval shape, triangular shape, Examples include pentagonal or more polygonal shapes, rounded triangular shapes, rounded rectangular shapes, rounded polygonal shapes, etc., and linear shapes extending parallel to the two sides of the phosphor layer (Rod-like shape). By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a lattice-like partition is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

Examples of the partition wall forming material include photosensitive polyimide resin, lead glass colored with a metal oxide such as cobalt oxide, SiO ₂ , and a low melting point glass paste. A protective layer (for example, made of SiO ₂ , SiON, or AlN) is provided on the surface (top surface and side surface) of the partition wall to prevent an electron beam from colliding with the partition wall and releasing gas from the partition wall. It may be formed.

Since the space between the cathode panel and the anode panel is maintained in a vacuum state, a spacer is provided between the cathode panel and the anode panel so that the cold cathode field emission display is not damaged by atmospheric pressure. It is preferable to arrange them. The spacer can be made of ceramics or glass material, for example. When the spacer is made of ceramics, the ceramics include aluminum silicate compounds such as mullite, aluminum oxide such as alumina, barium titanate, lead zirconate titanate, zirconia (zirconium oxide), cordiolite, barium borosilicate, silicic acid. Examples thereof include iron, glass ceramic materials, titanium oxide, chromium oxide, magnesium oxide, iron oxide, vanadium oxide, nickel oxide added thereto, and the like. For example, in Japanese translations of PCT publication No. 2003-524280 The materials described can also be used. In this case, the spacer can be manufactured by forming a so-called green sheet, firing the green sheet, and cutting the green sheet fired product. Glass materials include high strain point glass, low alkali glass, non-alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), Examples thereof include stellite (2MgO · SiO ₂ ), lead glass (Na ₂ O · PbO · SiO ₂ ), and crystalline glass. In addition, it is preferable to chamfer the end portion of the spacer to remove the protruding portion and the like. For example, the spacer may be fixed by being sandwiched between partition walls provided in the anode panel, or, for example, a spacer holding portion may be formed on the anode panel and / or the cathode panel and fixed by the spacer holding portion. do it.

An antistatic film, a resistor film, or the like may be provided on the side surface of the spacer. The material constituting the antistatic film preferably has a secondary electron emission coefficient close to 1. As the material constituting the antistatic film, a semiconductor such as Si or Ge, a semimetal such as graphite, an oxide, or a boride , Carbides, sulfides, nitrides, and the like can be used. For example, compounds containing a metalloid element such as a semi-metal and MoSe _x such as _{graphite, CrO x, NdO x, CrAl} x O y, manganese _{oxide, La x Ba 2-x CuO} 4, La x Y 1-x CrO 3 Oxides such as AlB _x and TiB _x , carbides such as SiC, sulfides such as MoS _x and WS _x , compounds of tungsten nitride and germanium nitride, nitrides such as BN, TiN, and AlN In addition, for example, materials described in, for example, JP-T-2004-500688 can be used. Examples of the material constituting the resistor film include ruthenium oxide (RuO _x ) and cermet. The film provided on the surface of the spacer such as an antistatic film may be made of a single type of material or may be made of a plurality of types of materials. For example, the film may have a single-layer structure, and the layer may be composed of a plurality of types of materials, or the film is formed by laminating a plurality of layers, and each layer is composed of different materials. Also good. These films can be formed by well-known methods such as various PVD methods such as sputtering and vacuum deposition, various CVD methods, and screen printing methods. Moreover, what is necessary is just to set arbitrarily the film thickness of these films | membranes as needed.

The cathode panel and the anode panel are joined at the peripheral part, but the joining may be performed by using an adhesive layer as a joining member, or a rod-like or frame-like (frame-like) insulating rigidity such as glass or ceramics. You may carry out using the joining member which consists of the frame body comprised from material and an adhesive layer. When using a joining member consisting of a frame and an adhesive layer, the height of the frame is appropriately selected, so that the cathode panel and the anode panel are compared with the case where a joining member consisting only of the adhesive layer is used. It is possible to set the facing distance between the longer. The material constituting the adhesive layer is generally a frit glass such as B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass, but has a melting point of about 120 to 400 ° C. These so-called low melting point metal materials may be used. Such low melting point metal materials include In (indium: melting point 157 ° C.); indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.), Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C.) C) tin (Sn) type high temperature solder such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.), etc. Lead (Pb) high temperature solder; zinc (Zn) high temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322) Tin-lead standard solder such as ° C); brazing material such as Au ₈₈ Ga ₁₂ (melting point 381 ° C) (the above subscripts all represent atomic%).

  When joining the three members of the cathode panel, the anode panel, and the joining member, the three members may be joined at the same time, or in the first stage, either the cathode panel or the anode panel and the joining member are joined, In the second stage, the other of the cathode panel or the anode panel and the joining member may be joined. If the three-party simultaneous bonding or the second stage bonding is performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, and the bonding member becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the cathode panel, the anode panel, and the joining member can be evacuated to create a vacuum. When exhausting after joining, the pressure of the atmosphere at the time of joining may be normal pressure / depressurized, and the gas constituting the atmosphere may be air, or nitrogen gas or group 0 of the periodic table An inert gas containing a gas belonging to (for example, Ar gas) may be used.

  When exhaust is performed, exhaust can be performed through an exhaust pipe (tip pipe) connected in advance to the cathode panel and / or the anode panel. The exhaust pipe is typically a glass pipe, or a metal or alloy having a low coefficient of thermal expansion [for example, an iron (Fe) alloy containing 42 wt% nickel (Ni), 42 wt% nickel (Ni), An iron (Fe) alloy containing 6% by weight of chromium (Cr)], and the ineffective region of the cathode panel and / or the anode panel (practical function as a cold cathode field emission display device). The above-mentioned frit glass or low-melting point metal material is used to join the periphery of the penetrating part provided in the frame surrounding the effective area, which is the display area of the center part, and the space is kept at a predetermined degree of vacuum. After reaching, it is sealed by thermal fusion or alternatively by crimping. Before sealing, once the entire cold cathode field emission display is heated and then cooled down, residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. Is preferred.

  In the manufacturing method of the first aspect of the present invention, after arranging a large number of spherical members on the insulating layer, the shell portion of each spherical member is removed, and then the insulating layer including the core portion of the spherical member After forming the gate electrode thereon, the core portion is removed to expose a part of the insulating layer, and then the exposed portion of the insulating layer is removed to form an opening. Moreover, in the manufacturing method of the second aspect of the present invention, a large number of spherical members are arranged on the insulating layer including the gate electrode, and then the shell portion of each spherical member is removed. After forming the sacrificial layer on the insulating layer and the gate electrode including the core part, the core part is removed to expose a part of the gate electrode, and then the exposed part of the gate electrode is removed and further removed. An opening is formed in the insulating layer exposed at the gate electrode portion. As described above, the distance between the core portions can be basically defined by the thickness of the shell portion, so that the arrangement state of the openings formed in the insulating layer is made as uniform as possible. can do. Further, since the size of the opening is defined by the core, the size and shape of the opening formed in the insulating layer can be made as uniform as possible. Furthermore, since the shell portion is removed, the occurrence of a state where the core portion and the core portion overlap can be suppressed. As a result, a uniform electron emission portion can be formed, the electron emission characteristics of the cold cathode field emission device can be made uniform, and a cold cathode field emission display device having high quality display quality is provided. be able to.

  Hereinafter, the present invention will be described based on examples with reference to the drawings.

  Example 1 is a manufacturing method of a cold cathode field electron emission device (hereinafter abbreviated as a field emission device) according to the first aspect of the present invention, and a cold cathode field electron emission according to the first aspect of the present invention. The present invention relates to a method for manufacturing a display device (hereinafter abbreviated as a display device). A schematic partial end view of the cathode panel CP and the anode panel AP in the display device of Example 1 is the same as that shown in FIG. FIG. 2 shows a schematic exploded perspective view of a part when the cathode panel CP and the anode panel AP are disassembled.

  In the display device of Example 1, the cathode panel CP provided with the electron emission area EA on the support 10 and the anode panel AP provided with the phosphor layer 22 and the anode electrode 23 are joined at the outer periphery. A space sandwiched between the cathode panel CP and the anode panel AP is maintained in a vacuum. In the display device according to the first embodiment, the field emission device includes a Spindt-type field emission device having a conical electron emission portion. The field emission device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, and an insulating layer 12. An opening 14 provided in the layer 12 and a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14 are configured. The cathode electrode 11 and the gate electrode 13 are each formed in a strip shape in a direction in which the projection images of both the electrodes 11 and 13 are orthogonal to each other, and an area where the projection images of these two electrodes overlap (one subpixel ( A plurality of field emission elements are provided in an electron emission area EA) corresponding to a sub-pixel) area. For simplification of the drawing, FIG. 1 shows two electron emission portions 15 in each electron emission area EA. The electron emission areas EA are normally arranged in a two-dimensional matrix within the effective area of the cathode panel CP (area that functions as an actual display portion).

  On the other hand, the anode panel AP includes a substrate 20, a phosphor layer 22 formed on the substrate 20 and having a predetermined pattern, and an anode electrode 23 formed thereon. One sub-pixel (one sub-pixel) is composed of an electron emission area EA and a phosphor layer 22 on the anode panel side facing the electron emission area EA. In the effective area, such sub-pixels are arranged on the order of several hundred thousand to several million, for example. A black matrix 21 is formed on the substrate 20 between the phosphor layer 22 and the phosphor layer 22. In FIG. 1, illustration of the partition walls, the spacers, and the spacer holding portions is omitted. In the case of a color display device, one pixel (one pixel) is composed of a set of one red light emitting phosphor layer 22R, one green light emitting phosphor layer 22G, and one blue light emitting phosphor layer 22B. Has been.

The anode panel AP and the cathode panel CP are arranged so that the electron emission region EA (field emission element) and the phosphor layer 22 face each other, and are joined through the joining member 24 at the peripheral portion, and then evacuated and sealed. By stopping, a display device can be manufactured. A through-hole 25 for evacuation is provided in an ineffective area (in the illustrated example, the ineffective area of the cathode panel CP) that surrounds the effective area and has a peripheral circuit for selecting a pixel. An exhaust pipe 26 sealed after evacuation is connected to the through hole 25. That is, the space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 24 is in a high vacuum (for example, 1 × 10 ⁻³ Pa or less).

  A relatively negative voltage is applied to the cathode electrode 11 from the cathode electrode control circuit 31, a relatively positive voltage is applied to the gate electrode 13 from the gate electrode control circuit 32, and the anode electrode 23 is applied to the anode electrode 23 more than the gate electrode 13. Further, a higher positive voltage is applied from the anode electrode control circuit 33. When displaying an image by the line-sequential driving method in such a display device, a video signal is input from the cathode electrode control circuit 31 to the cathode electrode 11, and a scanning signal is input from the gate electrode control circuit 32 to the gate electrode 13. On the contrary, a scanning signal may be input to the cathode electrode 11 from the cathode electrode control circuit 31, and a video signal may be input to the gate electrode 13 from the gate electrode control circuit 32. Electrons are emitted from the electron emitter 15 based on the quantum tunnel effect due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, and the electrons are attracted to the anode electrode 23. It passes and collides with the phosphor layer 22. As a result, the phosphor layer 22 is excited to emit light, and a desired image can be obtained. That is, the operation of the cold cathode field emission display is basically controlled by the voltage applied to the gate electrode 13 and the voltage applied to the cathode electrode 11. The cathode electrode 11 is driven by a cathode electrode drive driver, and the gate electrode 13 is driven by a gate electrode drive driver. The cathode electrode control circuit 31, the gate electrode control circuit 32, the anode electrode control circuit 33, and the drive driver can be composed of known circuits.

During actual operation of the display device, the anode voltage V _A applied to the anode electrode 23 from the anode electrode control circuit 33 is usually constant, for example, 5 kilovolts to 15 kilovolts, specifically, for example, 9 kilovolts ( For example, d ₀ = 2.0 mm). On the other hand, regarding the voltage V _C applied to the cathode electrode 11 and the voltage V _G applied to the gate electrode 13 during actual operation of the display device,
(1) A method in which the voltage V _C applied to the cathode electrode 11 is constant and the voltage V _G applied to the gate electrode 13 is changed. (2) The voltage V _C applied to the cathode electrode 11 is changed and applied to the gate electrode 13. the voltage V _G for changing the voltage V _C applied to the method (3) a cathode electrode 11, constant, and may employ any method to change the voltage V _G applied to the gate electrode 13.

  Hereinafter, FIGS. 3 and 4 (A) and (B), FIGS. 5 (A) and (B), and FIGS. 6 (A) and (B), which are schematic partial end views of the support and the like. The manufacturing method of Example 1 will be described with reference to FIGS. 7A and 7B.

[Step-100]
First, the cathode electrode 11 is formed on the support 10. Specifically, for example, a cathode electrode-forming conductive material layer made of chromium (Cr) having a thickness of 0.5 μm is formed on the support 10 made of a glass substrate by a sputtering method. The conductive material layer for forming the cathode electrode is patterned to form a strip-like cathode electrode 11 on the support 10. Here, the strip-like cathode electrode 11 extends in the horizontal direction of the drawing. Note that a resistor film may be formed on the cathode electrode 11 to stabilize the operation of the field emission device, make the electron emission characteristics uniform, and suppress the leakage current between the cathode electrode and the gate electrode.

[Step-110]
Thereafter, an insulating layer 12 is formed on the support 10 including the cathode electrode 11. Specifically, an insulating layer 12 made of, for example, SiO ₂ is formed on the entire surface by plasma CVD. The formation of the insulating layer 12 is not limited to the CVD method, and may be performed based on, for example, a sputtering method or a screen printing method.

[Step-120]
Next, a large number of spherical members 40 having a core portion 41 and a shell portion 42 formed on the outer surface of the core portion 41 are disposed on the insulating layer 12 (see FIG. 3). Specifically, the core portion 41 constituting the spherical member 40 is made of silica (SiO ₂ ), and the shell portion 42 is made of polystyrene. In addition, the shell part 42 can also be comprised from hydroxypropylene cellulose (HPC) and polymethylmethacrylate (PMMA). Here, the average diameter D _C of the core portion 41 is 1.5 × 10 ⁻⁷ m (0.15 μm), and the average diameter D _S of the shell portion 42 is 4.0 × 10 ⁻⁷ m (0.40 μm). It is. Therefore, D _S / D _C = 8/3. Furthermore, in Example 1 or Example 2 to be described later, the average thickness t _I of the insulating layer 12 is t _I = 2 × 10 ⁻⁷ m (0.20 μm).
t _I / (D _S −D _C ) = 0.8
It is. As a method for disposing a large number of spherical members 40 on the insulating layer 12, in Example 1, a spin coating method based on a solution in which the spherical members are dispersed in a solvent is employed. Here, the average arrangement density (average dispersion density) of the spherical members 40 on the insulating layer 12 was set to 4 × 10 ⁶ pieces / mm ² . Further, by adopting such an arrangement method, 10% or more of the finally obtained opening portion is converted into a virtual equilateral triangle [the length of one side is in a range of 0.5 × D _{S to} D _S. It was possible to locate at the apex of The same applies to Example 2 described later.

[Step-130]
Thereafter, the shell portion 42 of each spherical member 40 is removed. Specifically, the entire support is carried into a heating furnace, and the atmosphere temperature of the heating furnace is set to 120 ° C., so that the shell portion 42 is burned. In this way, the state shown in FIG. 4A can be obtained. Note that the core portion 41 is not detached (peeled) from the insulating layer 12 by firing the shell portion 42.

[Step-140]
Next, the gate electrode 13 is formed on the insulating layer 12 including the core portion 41 of the spherical member 40 (see FIG. 4B). Specifically, a gate electrode 13 made of chromium and having an average thickness t _G = 0.05 μm is formed on the entire surface based on a sputtering method. When the gate electrode 13 is formed on the insulating layer 12 including the core portion 41 of the spherical member 40 by forming the gate electrode 13 by such a method, the portion of the gate electrode 13 on the core portion 41 of the spherical member 40 is formed. And the portion of the gate electrode 13 located in the boundary region between the gate electrode 13 and the insulating layer 12 is at least partially discontinuous, or at least partially thin. The state can be obtained. Here, t _G / D _C = 0.33.

[Step-150]
Thereafter, the core portion 41 is removed to expose a part of the insulating layer 12. Specifically, the core portion 41 can be removed by performing mechanical removal using a brush on the entire surface, that is, by brushing. Thus, the state shown in FIG. 5A can be obtained.

[Step-160]
Next, a resist layer (not shown) is formed on the entire surface. Based on the lithography technique, the portion where the strip-shaped gate electrode is to be formed is covered with the resist layer, and the portion of the gate electrode not covered with the resist layer is formed. Etching forms a strip-like gate electrode 13 (extending in the direction perpendicular to the paper surface of the drawing), and then the resist layer is removed. In the drawing, the gate electrode 13 is not shown in a strip shape.

[Step-170]
Thereafter, the portion of the insulating layer 12 exposed by removing the core portion 41 is removed, and an opening 14 is formed in the portion of the insulating layer 12. Specifically, the portion of the insulating layer 12 exposed between the strip-shaped gate electrode 13 and the gate electrode 13 is covered with a resist layer (not shown), and then the core portion 41 is removed, whereby the opening end 13A. The insulating layer 12 is etched by an etching method using the gate electrode 13 on which is formed as an etching mask to form the opening 14, and then the resist layer is removed. Thus, a state in which the cathode electrode 11 is exposed at the bottom of the opening 14 can be obtained (see FIG. 5B).

[Step-180]
Next, the electron emission portion 15 is formed in the portion of the cathode electrode 11 exposed at the bottom of the opening 14. Specifically, the peeling layer 16 is formed by obliquely depositing nickel (Ni) on the insulating layer 12 including the gate electrode 13 while rotating the support 10 (see FIG. 6A). At this time, by selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal of the support 10 (for example, an incident angle of 65 to 85 degrees), the gate is hardly deposited on the bottom of the opening 14. A peeling layer 16 can be formed on the electrode 13 and the insulating layer 12. The release layer 16 protrudes from the opening end 13 </ b> A provided in the gate electrode 13 in a bowl shape, whereby the opening 14 is substantially reduced in diameter.

  Next, for example, molybdenum (Mo) is vertically deposited as an electrically conductive material on the entire surface (incident angle: 3 to 10 degrees). At this time, as shown in FIG. 6B, as the conductive material layer 17 having an overhang shape grows on the release layer 16, the substantial diameter of the opening 14 is gradually reduced. The vapor deposition particles that contribute to the deposition at the bottom of the portion 14 are gradually limited to those that pass near the center of the opening 14. As a result, a conical deposit is formed at the bottom of the opening 14, and this conical deposit becomes the electron emitting portion 15.

  After that, as shown in FIG. 7A, the peeling layer 16 is peeled off from the surfaces of the gate electrode 13 and the insulating layer 12 by a lift-off method, and the conductive material layer 17 above the gate electrode 13 and the insulating layer 12 is removed. To do. Then, it is preferable to retract the side wall of the opening 14 by isotropic etching so that the opening end 13A of the gate electrode 13 protrudes (see FIG. 7B). Thus, a cathode panel CP in which a plurality of Spindt type field emission devices are formed can be obtained. Here, the overlapping region of the strip-shaped cathode electrode 11 and the gate electrode 13 corresponds to the electron emission region EA.

[Step-190]
Next, the display device shown in FIG. 1 is assembled. Specifically, the anode panel AP and the cathode panel CP are arranged so that the phosphor layer 22 and the electron emission region EA face each other via a spacer (not shown). The anode panel AP and the cathode panel CP (more specifically, the support body 10 and the substrate 20) are joined together at the peripheral edge via, for example, the joining member 24. At the time of joining, frit glass as an adhesive layer is applied to the joining part between the joining member 24 and the anode panel AP and the joining part between the joining member 24 and the cathode panel CP, and the frit glass is dried by pre-baking. Then, the anode panel AP, the cathode panel CP, and the joining member are bonded together, and the main baking is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the space surrounded by the anode panel AP, the cathode panel CP, and the joining member 24 is exhausted through the through hole 25 and the exhaust pipe 26. When the pressure in the space reaches about 10 ⁻⁴ Pa, the exhaust pipe 26 is removed. Seal by heat melting or pressure welding. In this manner, the space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 24 can be evacuated. Thereafter, wiring with necessary external circuits is performed, and the display device of Example 1 can be completed.

  In the manufacturing method of the first embodiment, a large number of spherical members 40 are arranged on the insulating layer 12, and then the shell portion 42 of each spherical member 40 is removed, and then the core portion 41 of the spherical member 40 is included. After forming the gate electrode 13 on the insulating layer 12, the core part 41 is removed to expose a part of the insulating layer 12, and then the part of the insulating layer 12 exposed by removing the core part 41 is removed. Thus, the opening 14 is formed. Thus, since the distance between the core part 41 and the core part 41 can be fundamentally defined by the thickness of the shell part 42, the arrangement state of the openings 14 formed in the insulating layer 12 Can be made as uniform as possible. In addition, since the size of the opening 14 is defined by the core portion 41, the size and shape of the opening 14 formed in the insulating layer 12 can be made as uniform as possible. Furthermore, since the shell part 42 is removed, the occurrence of a state in which the core part 41 and the core part 41 overlap can be suppressed. As a result, the uniform electron emission portion 15 can be formed, the electron emission characteristics of the field emission device can be made uniform, and a display device having high-quality display quality can be provided.

  Example 2 relates to the manufacturing method of the second aspect of the present invention. Since the configurations and structures of the cathode panel CP and the anode panel AP in the display device of the second embodiment are the same as the configurations and structures of the cathode panel CP and the anode panel AP in the display device of the first embodiment, detailed description thereof is omitted. .

  Hereinafter, FIGS. 8 and 9 (A) and (B), FIGS. 10 (A) and (B), and FIGS. 11 (A) and (B), which are schematic partial end views of the support and the like. The manufacturing method of Example 2 will be described with reference to FIGS.

[Step-200]
First, the cathode electrode 11 is formed on the support 10 in the same manner as in [Step-100] in Example 1, and then the cathode electrode 11 is included in the same manner as in [Step-110] in Example 1. An insulating layer 12 is formed on the support 10.

[Step-210]
Thereafter, the gate electrode 13 is formed on the insulating layer 12. Specifically, the gate electrode 13 made of chromium is formed on the entire surface based on the sputtering method. Next, a resist layer (not shown) is formed on the entire surface. Based on the lithography technique, the portion where the strip-shaped gate electrode is to be formed is covered with the resist layer, and the portion of the gate electrode not covered with the resist layer is formed. Etching forms a strip-like gate electrode 13 (extending in the direction perpendicular to the paper surface of the drawing), and then the resist layer is removed. In the drawing, the gate electrode 13 is not shown in a strip shape.

[Step-220]
Next, a large number of spherical members 40 having a core portion 41 and a shell portion 42 formed on the outer surface of the core portion 41 are disposed on the insulating layer 12 including the gate electrode 13 (see FIG. 8). Specifically, the same spherical member 40 as in Example 1 is used, and a large number of spherical members 40 are arranged on the insulating layer 12 including the gate electrode 13 in the same manner as in [Step-120] in Example 1. Thereafter, the shell portion 42 of each spherical member 40 is removed in the same manner as in [Step-130] of the first embodiment. Thus, the state shown in FIG. 9A can be obtained.

[Step-230]
Next, a sacrificial layer 50 is formed on the insulating layer 12 including the core portion 41 of the spherical member 40 and the gate electrode 13 (see FIG. 9B). Specifically, a sacrificial layer 50 made of a polymer resin material is formed on the entire surface based on a coating method. By forming the sacrificial layer 50 by such a method, when the sacrificial layer 50 is formed on the insulating layer 12 including the core part 41 of the spherical member 40 and the gate electrode 13, the sacrificial layer 50 on the core part 41 of the spherical member 40 is sacrificed. The portion of the sacrificial layer 50 located in the boundary region between the portion of the layer 50 and the portion of the sacrificial layer 50 on the gate electrode 13 is at least partially discontinuous, or at least partially thick. A thin state can be obtained. Here, in Example 2, the average thickness t _G of the gate electrode 13 and the average thickness t _S of the sacrificial layer 50 are set as follows.
t _G = 50 μm
t _S = 50 μm
Therefore, the values of t _G / D _C and t _S / D _C are respectively
t _G / D _C = 1/3
t _S / D _C = 1/3
It is.

[Step-240]
Thereafter, in the same manner as in [Step-150] in Example 1, the core portion 41 is removed to expose a part of the gate electrode 13 and the insulating layer 12 (see FIG. 10A).

[Step-250]
Next, using the sacrificial layer 50 as an etching mask, the portion of the gate electrode 13 exposed by removing the core portion 41 is removed by an etching method, and an opening portion 14 is formed in the insulating layer 12. The cathode electrode 11 is exposed at the bottom of the substrate (see FIG. 10B).

[Step-260]
Thereafter, in the same manner as in [Step-180] of Example 1, the electron emission portion 15 is formed on the portion of the cathode electrode 11 exposed at the bottom of the opening portion. Specifically, for example, molybdenum (Mo) is vertically deposited as an electrically conductive material on the entire surface (incident angle of 3 degrees to 10 degrees). At this time, as shown in FIG. 11A, as the conductive material layer 17 having an overhang shape grows on the sacrificial layer 50, the substantial diameter of the opening 14 is gradually reduced. The vapor deposition particles that contribute to the deposition at the bottom of the portion 14 are gradually limited to those that pass near the center of the opening 14. As a result, a conical deposit is formed at the bottom of the opening 14, and this conical deposit becomes the electron emitting portion 15.

  After that, as shown in FIG. 11B, the sacrificial layer 50 is peeled off from the surfaces of the gate electrode 13 and the insulating layer 12 by a lift-off method, and the conductive material layer 17 above the gate electrode 13 and the insulating layer 12 is removed. To do. Thereafter, it is preferable that the side wall of the opening 14 is retracted by isotropic etching to project the opening end 13A of the gate electrode 13 (see FIG. 12). Thus, a cathode panel CP in which a plurality of Spindt type field emission devices are formed can be obtained.

[Step-270]
Thereafter, the display device shown in FIG. 1 is assembled in the same manner as [Step-190] of the first embodiment.

  In the manufacturing method of the second embodiment, a large number of spherical members 40 are arranged on the insulating layer 12 including the gate electrode 13, and then the shell portion 42 of each spherical member 40 is removed. After forming the sacrificial layer 50 on the insulating layer 12 including the core portion 41 and the gate electrode 13, the core portion 41 is removed to expose a part of the gate electrode 13, and then exposed by removing the core portion 41. The gate electrode 13 is removed, and an opening 14 is formed in the insulating layer 12 exposed at the removed gate electrode 13. As described above, even in the second embodiment, the distance between the core portion 41 and the core portion 41 can be basically defined by the thickness of the shell portion 42, and thus formed in the insulating layer 12. The arrangement state of the openings 14 to be made can be made as uniform as possible. In addition, since the size of the opening 14 is defined by the core portion 41, the size and shape of the opening 14 formed in the insulating layer 12 can be made as uniform as possible. Furthermore, since the shell part 42 is removed, the occurrence of a state in which the core part 41 and the core part 41 overlap can be suppressed. As a result, the uniform electron emission portion 15 can be formed, the electron emission characteristics of the field emission device can be made uniform, and a display device having high-quality display quality can be provided.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configurations, structures, constituent materials, processing conditions, manufacturing conditions, and the like of the flat display device, the cathode panel and the anode panel, and the field emission device described in the embodiments are examples, and can be changed as appropriate. In the cold cathode field emission display, the color display has been described as an example, but a single color display may be used.

FIG. 1 is a schematic partial end view of a cathode panel and an anode panel in a cold cathode field emission display according to an embodiment. FIG. 2 is a schematic exploded perspective view of a part when the cathode panel and the anode panel are disassembled in the cold cathode field emission display according to the embodiment. FIG. 3 is a schematic partial end view of a support and the like for explaining the manufacturing method of the cold cathode field emission device and the manufacturing method of the cold cathode field emission display device of Example 1. 4 (A) and 4 (B) show a support for explaining the manufacturing method of the cold cathode field emission device and the manufacturing method of the cold cathode field emission display device of Example 1 following FIG. It is a typical partial end view. FIGS. 5A and 5B are diagrams for explaining a manufacturing method of a cold cathode field emission device and a manufacturing method of a cold cathode field emission display device of Example 1 following FIG. 4B. It is a typical partial end view of a support or the like. 6 (A) and 6 (B) are diagrams for explaining a manufacturing method of a cold cathode field emission device and a manufacturing method of a cold cathode field emission display device of Example 1 following FIG. 5 (B). It is a typical partial end view of a support or the like. FIGS. 7A and 7B are diagrams for explaining a manufacturing method of a cold cathode field emission device and a manufacturing method of a cold cathode field emission display device of Example 1 following FIG. 6B. It is a typical partial end view of a support or the like. FIG. 8 is a schematic partial end view of a support and the like for explaining the manufacturing method of the cold cathode field emission device and the manufacturing method of the cold cathode field emission display device of Example 2. 9 (A) and 9 (B) show a support for explaining a manufacturing method of a cold cathode field emission device and a manufacturing method of a cold cathode field emission display device of Example 2 following FIG. 8. It is a typical partial end view. FIGS. 10A and 10B are diagrams for explaining a method for manufacturing a cold cathode field emission device and a method for manufacturing a cold cathode field emission display device of Example 2, following FIG. 9B. It is a typical partial end view of a support or the like. FIGS. 11A and 11B are diagrams for explaining a method for manufacturing a cold cathode field emission device and a method for manufacturing a cold cathode field emission display device of Example 2, following FIG. 10B. It is a typical partial end view of a support or the like. FIG. 12 is a schematic diagram of a support and the like for explaining the manufacturing method of the cold cathode field emission device and the manufacturing method of the cold cathode field emission display device of Example 2 following FIG. FIG. FIGS. 13A to 13C are schematic partial end views of a support and the like for explaining a conventional method for manufacturing a cold cathode field emission device. 14A to 14C are schematic partial end views of a support and the like for explaining a conventional method for manufacturing a cold cathode field emission device following FIG. 13C. .

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Support body, 11 ... Cathode electrode, 12 ... Insulating layer, 13 ... Gate electrode, 13A ... Open end of gate electrode, 14 ... Opening part, 15 ... Electron Emission part, 20 ... substrate, 21 ... light absorption layer (black matrix), 22, 22R, 22G, 22B ... phosphor layer, 23 ... anode electrode, 25 ... through hole, 26 ... Exhaust pipe (tip pipe), 31 ... Cathode electrode control circuit, 32 ... Gate electrode control circuit, 33 ... Anode electrode control circuit, 40 ... Spherical member, 41 ... Core part 42 ... shell part, 50 ... sacrificial layer, CP ... cathode panel, AP ... anode panel, EA ... electron emission region

Claims (14)

(A) After forming the cathode electrode on the support,
(B) forming an insulating layer on a support including on the cathode electrode;
(C) After disposing a plurality of spherical members having a core portion and a shell portion formed on the outer surface of the core portion on the insulating layer, removing the shell portion of each spherical member;
(D) After forming the gate electrode on the insulating layer including the core portion of the spherical member, the core portion is removed to expose a part of the insulating layer;
(E) An exposed portion of the insulating layer is removed to form an opening, the cathode electrode is exposed at the bottom of the opening, and then an electron emitting portion is formed at the portion of the cathode electrode exposed at the bottom of the opening To
A method of manufacturing a cold cathode field emission device comprising the steps. The core part is made of ceramic material,
The method for manufacturing a cold cathode field emission device according to claim 1, wherein the shell portion is made of an organic material.   The method for manufacturing a cold cathode field emission device according to claim 1, wherein the removal of the shell portion of each spherical member in the step (C) is based on combustion.   The method for manufacturing a cold cathode field emission device according to claim 1, wherein the removal of the core in the step (D) is based on mechanical removal using a brush. The average diameter of the core is 8 × 10 ⁻⁸ m to 2 × 10 ⁻⁷ m,
2. The method of manufacturing a cold cathode field emission device according to claim 1, wherein the shell has an average diameter of 2 × 10 ⁻⁷ m to 6 × 10 ⁻⁷ m. 2. The cooling according to claim 1, wherein when the average thickness of the gate electrode is t _G and the average diameter of the core portion is D _C , 0.2 ≦ t _G / D _C ≦ 1.0 is satisfied. A method for manufacturing a cathode field emission device. (A) After forming the cathode electrode on the support,
(B) After forming an insulating layer on a support including the cathode electrode and forming a gate electrode on the insulating layer,
(C) A large number of spherical members having a core part and a shell part formed on the outer surface of the core part are disposed on the insulating layer including the gate electrode, and then the shell part of each spherical member is removed;
(D) After forming the sacrificial layer on the insulating layer and the gate electrode including the core part of the spherical member, the core part is removed to expose a part of the gate electrode,
(E) The exposed portion of the gate electrode is removed, an opening is formed in the insulating layer, the cathode electrode is exposed at the bottom of the opening, and then the cathode electrode exposed at the bottom of the opening is formed. Forming an electron emitter and then removing the sacrificial layer;
A method of manufacturing a cold cathode field emission device comprising the steps. The core part is made of ceramic material,
The method of manufacturing a cold cathode field emission device according to claim 7, wherein the shell portion is made of an organic material.   The method for manufacturing a cold cathode field emission device according to claim 7, wherein the removal of the shell portion of each spherical member in the step (C) is based on combustion.   The method for manufacturing a cold cathode field emission device according to claim 7, wherein the removal of the core portion in the step (D) is based on mechanical removal using a brush. The average diameter of the core is 8 × 10 ⁻⁸ m to 2 × 10 ⁻⁷ m,
8. The method of manufacturing a cold cathode field emission device according to claim 7, wherein the average diameter of the shell portion is 2 × 10 ⁻⁷ m to 6 × 10 ⁻⁷ m. 8. The cooling according to claim 7, wherein 0.1 ≦ t _S / D _C ≦ 0.6 is satisfied, where t _S is the average thickness of the sacrificial layer and D _C is the average diameter of the core portion. A method for manufacturing a cathode field emission device. The cathode panel provided with the electron emission region on the support and the anode panel provided with the phosphor layer and the anode electrode are joined at the outer periphery, and the space between the cathode panel and the anode panel is vacuumed. A method of manufacturing a cold cathode field emission display device,
The electron emission region,
(A) After forming the cathode electrode on the support,
(B) forming an insulating layer on a support including on the cathode electrode;
(C) After disposing a plurality of spherical members having a core portion and a shell portion formed on the outer surface of the core portion on the insulating layer, removing the shell portion of each spherical member;
(D) After forming the gate electrode on the insulating layer including the core portion of the spherical member, the core portion is removed to expose a part of the insulating layer;
(E) An exposed portion of the insulating layer is removed to form an opening, the cathode electrode is exposed at the bottom of the opening, and then an electron emitting portion is formed at the portion of the cathode electrode exposed at the bottom of the opening To
A method of manufacturing a cold cathode field emission device, wherein the method is formed based on each step. The cathode panel provided with the electron emission region on the support and the anode panel provided with the phosphor layer and the anode electrode are joined at the outer periphery, and the space between the cathode panel and the anode panel is vacuumed. A method of manufacturing a cold cathode field emission display device,
The electron emission region,
(A) After forming the cathode electrode on the support,
(B) After forming an insulating layer on a support including the cathode electrode and forming a gate electrode on the insulating layer,
(C) A large number of spherical members having a core part and a shell part formed on the outer surface of the core part are disposed on the insulating layer including the gate electrode, and then the shell part of each spherical member is removed;
(D) After forming the sacrificial layer on the insulating layer and the gate electrode including the core part of the spherical member, the core part is removed to expose a part of the gate electrode,
(E) The exposed portion of the gate electrode is removed, an opening is formed in the insulating layer, the cathode electrode is exposed at the bottom of the opening, and then the cathode electrode exposed at the bottom of the opening is formed. Forming an electron emitter and then removing the sacrificial layer;
A method of manufacturing a cold cathode field emission device, wherein the method is formed based on each step.

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