JP5141882B2 - バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 - Google Patents
バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 Download PDFInfo
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- JP5141882B2 JP5141882B2 JP2008013962A JP2008013962A JP5141882B2 JP 5141882 B2 JP5141882 B2 JP 5141882B2 JP 2008013962 A JP2008013962 A JP 2008013962A JP 2008013962 A JP2008013962 A JP 2008013962A JP 5141882 B2 JP5141882 B2 JP 5141882B2
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- underlayer film
- resist underlayer
- barrier property
- resist
- composition
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
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- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
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- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- IFDUTQGPGFEDHJ-UHFFFAOYSA-N 2-methylprop-2-enoic acid;oxolan-2-one Chemical compound CC(=C)C(O)=O.O=C1CCCO1 IFDUTQGPGFEDHJ-UHFFFAOYSA-N 0.000 description 1
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 1
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- FTOAOBMCPZCFFF-UHFFFAOYSA-N 5,5-diethylbarbituric acid Chemical compound CCC1(CC)C(=O)NC(=O)NC1=O FTOAOBMCPZCFFF-UHFFFAOYSA-N 0.000 description 1
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
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- 125000003342 alkenyl group Chemical group 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229960002319 barbital Drugs 0.000 description 1
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- QUBQYFYWUJJAAK-UHFFFAOYSA-N oxymethurea Chemical compound OCNC(=O)NCO QUBQYFYWUJJAAK-UHFFFAOYSA-N 0.000 description 1
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- 125000001424 substituent group Chemical group 0.000 description 1
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- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Epoxy Resins (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008013962A JP5141882B2 (ja) | 2008-01-24 | 2008-01-24 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008013962A JP5141882B2 (ja) | 2008-01-24 | 2008-01-24 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009175436A JP2009175436A (ja) | 2009-08-06 |
| JP2009175436A5 JP2009175436A5 (enExample) | 2010-12-16 |
| JP5141882B2 true JP5141882B2 (ja) | 2013-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008013962A Expired - Fee Related JP5141882B2 (ja) | 2008-01-24 | 2008-01-24 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5141882B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9908990B2 (en) | 2015-04-17 | 2018-03-06 | Samsung Sdi Co., Ltd. | Organic layer composition, organic layer, and method of forming patterns |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012124597A1 (ja) * | 2011-03-15 | 2012-09-20 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
| WO2013141015A1 (ja) * | 2012-03-23 | 2013-09-26 | 日産化学工業株式会社 | Ｅｕｖリソグラフィー用レジスト下層膜形成組成物 |
| KR101866209B1 (ko) | 2012-05-07 | 2018-06-11 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성조성물 |
| US9395628B2 (en) | 2013-02-25 | 2016-07-19 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group |
| KR102276783B1 (ko) | 2013-06-26 | 2021-07-14 | 닛산 가가쿠 가부시키가이샤 | 치환된 가교성 화합물을 포함하는 레지스트 하층막 형성 조성물 |
| US10113083B2 (en) | 2013-08-08 | 2018-10-30 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound |
| JP6335807B2 (ja) * | 2015-01-27 | 2018-05-30 | 四国化成工業株式会社 | 新規なグリコールウリル類とその利用 |
| KR20230079080A (ko) | 2020-09-28 | 2023-06-05 | 닛산 가가쿠 가부시키가이샤 | 플루오로알킬기를 갖는 유기산 또는 그의 염을 포함하는 레지스트 하층막형성 조성물 |
| KR20250023875A (ko) * | 2023-08-10 | 2025-02-18 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| KR20250042527A (ko) * | 2023-09-20 | 2025-03-27 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
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| JPH0980755A (ja) * | 1995-09-12 | 1997-03-28 | Sony Corp | レジストプロセス及び多層レジスト膜 |
| JP3506357B2 (ja) * | 1996-12-13 | 2004-03-15 | 東京応化工業株式会社 | リソグラフィー用下地材 |
| EP1172695A1 (en) * | 2000-07-14 | 2002-01-16 | Shipley Company LLC | Barrier layer |
| JP4171920B2 (ja) * | 2002-10-09 | 2008-10-29 | 日産化学工業株式会社 | リソグラフィー用反射防止膜形成組成物 |
| JP2005142339A (ja) * | 2003-11-06 | 2005-06-02 | Semiconductor Leading Edge Technologies Inc | パターン形成方法 |
| JP2005268321A (ja) * | 2004-03-16 | 2005-09-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| TWI340296B (en) * | 2005-03-20 | 2011-04-11 | Rohm & Haas Elect Mat | Coating compositions for use with an overcoated photoresist |
| KR100655064B1 (ko) * | 2005-05-27 | 2006-12-06 | 제일모직주식회사 | 반사방지성을 갖는 하드마스크 조성물 |
| WO2007111147A1 (ja) * | 2006-03-27 | 2007-10-04 | Nissan Chemical Industries, Ltd. | Ｑｃｍセンサーを用いる熱硬化膜中の昇華物の測定方法 |
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2008
- 2008-01-24 JP JP2008013962A patent/JP5141882B2/ja not_active Expired - Fee Related
Cited By (1)
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