JP5139432B2 - カーボンナノチューブ・コンタクト構造 - Google Patents

カーボンナノチューブ・コンタクト構造 Download PDF

Info

Publication number
JP5139432B2
JP5139432B2 JP2009525721A JP2009525721A JP5139432B2 JP 5139432 B2 JP5139432 B2 JP 5139432B2 JP 2009525721 A JP2009525721 A JP 2009525721A JP 2009525721 A JP2009525721 A JP 2009525721A JP 5139432 B2 JP5139432 B2 JP 5139432B2
Authority
JP
Japan
Prior art keywords
base
contact
carbon nanotube
substrate
nanotube film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009525721A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010515010A5 (enExample
JP2010515010A (ja
Inventor
エルドリッジ,ベンジャミン,エヌ.
ケイ. グリッターズ,ジョン
ハンドロス,イゴール,ケイ.
マーテンズ,ロッド
マシュー,ガエタン,エル.
Original Assignee
フォームファクター, インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by フォームファクター, インコーポレイテッド filed Critical フォームファクター, インコーポレイテッド
Publication of JP2010515010A publication Critical patent/JP2010515010A/ja
Publication of JP2010515010A5 publication Critical patent/JP2010515010A5/ja
Application granted granted Critical
Publication of JP5139432B2 publication Critical patent/JP5139432B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755Material aspects
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B1/001Devices without movable or flexible elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B1/008Nanostructures not provided for in groups B82B1/001 - B82B1/007
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/03Contact members characterised by the material, e.g. plating, or coating materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49204Contact or terminal manufacturing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Contacts (AREA)
JP2009525721A 2006-08-21 2007-08-21 カーボンナノチューブ・コンタクト構造 Expired - Fee Related JP5139432B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/466,039 US7731503B2 (en) 2006-08-21 2006-08-21 Carbon nanotube contact structures
US11/466,039 2006-08-21
PCT/US2007/076345 WO2008024726A2 (en) 2006-08-21 2007-08-21 Carbon nanotube contact structures

Publications (3)

Publication Number Publication Date
JP2010515010A JP2010515010A (ja) 2010-05-06
JP2010515010A5 JP2010515010A5 (enExample) 2010-10-07
JP5139432B2 true JP5139432B2 (ja) 2013-02-06

Family

ID=39107572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009525721A Expired - Fee Related JP5139432B2 (ja) 2006-08-21 2007-08-21 カーボンナノチューブ・コンタクト構造

Country Status (8)

Country Link
US (1) US7731503B2 (enExample)
EP (1) EP2059977A2 (enExample)
JP (1) JP5139432B2 (enExample)
KR (1) KR20090050082A (enExample)
CN (1) CN101652901A (enExample)
SG (1) SG177999A1 (enExample)
TW (1) TWI429581B (enExample)
WO (1) WO2008024726A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007002297A2 (en) 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
US8354855B2 (en) * 2006-10-16 2013-01-15 Formfactor, Inc. Carbon nanotube columns and methods of making and using carbon nanotube columns as probes
US8149007B2 (en) 2007-10-13 2012-04-03 Formfactor, Inc. Carbon nanotube spring contact structures with mechanical and electrical components
KR101097217B1 (ko) * 2008-09-17 2011-12-22 한국기계연구원 카본 나노 튜브가 코팅된 프로브 카드용 미세 접촉 프로브 및 그 제조방법
SG193876A1 (en) 2008-09-29 2013-10-30 Wentworth Lab Inc Probe cards including nanotube probes and methods of fabricating
US20100252317A1 (en) * 2009-04-03 2010-10-07 Formfactor, Inc. Carbon nanotube contact structures for use with semiconductor dies and other electronic devices
US8272124B2 (en) * 2009-04-03 2012-09-25 Formfactor, Inc. Anchoring carbon nanotube columns
JP5465516B2 (ja) * 2009-12-08 2014-04-09 日本電子材料株式会社 プローブ及びプローブの製造方法
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
CN102073199B (zh) * 2010-12-07 2013-11-06 北京富纳特创新科技有限公司 垫片
JP5827889B2 (ja) * 2011-12-27 2015-12-02 株式会社フジクラ カーボンナノファイバ構造体、カーボンナノファイバ電極及びカーボンナノファイバ構造体の製造方法
DE102012102210A1 (de) * 2012-03-15 2013-09-19 Solibro Gmbh Heizsystem für eine Vakuumabscheidequelle und Vakuumabscheidevorrichtung
KR101467390B1 (ko) * 2013-04-11 2014-12-03 (주)엠프리시젼 접촉 패드의 제조 방법
TWI539164B (zh) * 2013-11-22 2016-06-21 財團法人工業技術研究院 塗佈探針及其製作方法
US20160106004A1 (en) 2014-10-13 2016-04-14 Ntherma Corporation Carbon nanotubes disposed on metal substrates with one or more cavities
JPWO2018173884A1 (ja) * 2017-03-21 2020-01-30 日本電産リード株式会社 プローブ構造体、及びプローブ構造体の製造方法
KR102148330B1 (ko) * 2018-11-13 2020-08-26 주식회사 아이에스시 전기접속용 커넥터
US11243231B2 (en) * 2018-12-18 2022-02-08 Tien-Chien Cheng Vertical probe card
US20230221349A1 (en) * 2020-06-22 2023-07-13 Yokowo Co., Ltd. Plunger and method of manufacturing plunger

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0927331B1 (en) * 1996-08-08 2004-03-31 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
JP3740295B2 (ja) * 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
US6020747A (en) * 1998-01-26 2000-02-01 Bahns; John T. Electrical contact probe
US7126220B2 (en) * 2002-03-18 2006-10-24 Nanonexus, Inc. Miniaturized contact spring
JP4260310B2 (ja) * 1999-10-26 2009-04-30 エスアイアイ・ナノテクノロジー株式会社 微小接触式プローバー
US6709566B2 (en) * 2000-07-25 2004-03-23 The Regents Of The University Of California Method for shaping a nanotube and a nanotube shaped thereby
JP5165828B2 (ja) * 2002-02-09 2013-03-21 三星電子株式会社 炭素ナノチューブを用いるメモリ素子及びその製造方法
US20040208788A1 (en) * 2003-04-15 2004-10-21 Colton Jonathan S. Polymer micro-cantilevers and their methods of manufacture
US6626684B1 (en) * 2002-06-24 2003-09-30 Hewlett-Packard Development Company, L.P. Nanotube socket system and method
TWI220162B (en) * 2002-11-29 2004-08-11 Ind Tech Res Inst Integrated compound nano probe card and method of making same
US6920689B2 (en) * 2002-12-06 2005-07-26 Formfactor, Inc. Method for making a socket to perform testing on integrated circuits
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
US7082683B2 (en) * 2003-04-24 2006-08-01 Korea Institute Of Machinery & Materials Method for attaching rod-shaped nano structure to probe holder
TWI220163B (en) * 2003-04-24 2004-08-11 Ind Tech Res Inst Manufacturing method of high-conductivity nanometer thin-film probe card
US7404338B2 (en) * 2004-03-02 2008-07-29 Eth Zurich Force sensor
JP4723195B2 (ja) * 2004-03-05 2011-07-13 株式会社オクテック プローブの製造方法
US20060028220A1 (en) * 2004-07-21 2006-02-09 K&S Interconnect, Inc. Reinforced probes for testing semiconductor devices
JP4167212B2 (ja) * 2004-10-05 2008-10-15 富士通株式会社 カーボンナノチューブ構造体、半導体装置、および半導体パッケージ
JP2006125846A (ja) * 2004-10-26 2006-05-18 Olympus Corp カンチレバー
CN100501413C (zh) * 2005-01-22 2009-06-17 鸿富锦精密工业(深圳)有限公司 集成电路检测装置及其制备方法
WO2007002297A2 (en) * 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
DE102006039651A1 (de) * 2005-08-31 2007-03-22 Hitachi Kenki Finetech Co., Ltd. Cantilever und Prüfvorrichtung
US7625817B2 (en) * 2005-12-30 2009-12-01 Intel Corporation Method of fabricating a carbon nanotube interconnect structures
US20070158768A1 (en) * 2006-01-06 2007-07-12 Honeywell International, Inc. Electrical contacts formed of carbon nanotubes
KR101159074B1 (ko) * 2006-01-14 2012-06-25 삼성전자주식회사 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법
US20070235713A1 (en) * 2006-04-03 2007-10-11 Motorola, Inc. Semiconductor device having carbon nanotube interconnects and method of fabrication
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
TWI360182B (en) * 2007-10-05 2012-03-11 Ind Tech Res Inst Method for making a conductive film
US8149007B2 (en) * 2007-10-13 2012-04-03 Formfactor, Inc. Carbon nanotube spring contact structures with mechanical and electrical components

Also Published As

Publication number Publication date
TWI429581B (zh) 2014-03-11
CN101652901A (zh) 2010-02-17
WO2008024726A2 (en) 2008-02-28
US7731503B2 (en) 2010-06-08
EP2059977A2 (en) 2009-05-20
KR20090050082A (ko) 2009-05-19
SG177999A1 (en) 2012-02-28
TW200831396A (en) 2008-08-01
WO2008024726A3 (en) 2008-07-10
US20100112828A1 (en) 2010-05-06
JP2010515010A (ja) 2010-05-06

Similar Documents

Publication Publication Date Title
JP5139432B2 (ja) カーボンナノチューブ・コンタクト構造
US6920689B2 (en) Method for making a socket to perform testing on integrated circuits
US8383958B2 (en) Method to build robust mechanical structures on substrate surfaces
US7621044B2 (en) Method of manufacturing a resilient contact
US6016060A (en) Method, apparatus and system for testing bumped semiconductor components
US6882167B2 (en) Method of forming an electrical contact
US8756802B2 (en) Carbon nanotube contact structures for use with semiconductor dies and other electronic devices
JPH10506197A (ja) プローブカード・アセンブリ及びキット、及びそれらを用いる方法
KR20050025640A (ko) 마이크로 전자 스프링 접촉부 어레이를 제조하는 방법
KR20090012242A (ko) 전자 부품을 구비한 프로브 구조
JP2006509215A5 (enExample)
US20080268669A1 (en) Transferable Micro Spring Structure
US6174175B1 (en) High density Z-axis connector
EP1847834B1 (en) Interposer, probe card and method for manufacturing interposer
JP2004317162A (ja) プローブカード、プローブピン及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100816

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100816

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120621

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120920

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120927

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121012

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121029

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121115

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees