JP5138181B2 - フェライト遮蔽構造を備えた半導体パッケージ - Google Patents

フェライト遮蔽構造を備えた半導体パッケージ Download PDF

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Publication number
JP5138181B2
JP5138181B2 JP2006145633A JP2006145633A JP5138181B2 JP 5138181 B2 JP5138181 B2 JP 5138181B2 JP 2006145633 A JP2006145633 A JP 2006145633A JP 2006145633 A JP2006145633 A JP 2006145633A JP 5138181 B2 JP5138181 B2 JP 5138181B2
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Japan
Prior art keywords
ferrite
layer
conductive pad
termination point
semiconductor device
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JP2006145633A
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English (en)
Japanese (ja)
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JP2007043090A5 (enExample
JP2007043090A (ja
Inventor
垠錫 宋
芸炳 姜
始勳 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Priority claimed from KR1020050070396A external-priority patent/KR100606654B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007043090A publication Critical patent/JP2007043090A/ja
Publication of JP2007043090A5 publication Critical patent/JP2007043090A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/423Shielding layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/922Bond pads being integral with underlying chip-level interconnections
    • H10W72/9223Bond pads being integral with underlying chip-level interconnections with redistribution layers [RDL]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/981Auxiliary members, e.g. spacers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/981Auxiliary members, e.g. spacers
    • H10W72/983Reinforcing structures, e.g. collars
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered

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  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006145633A 2005-08-01 2006-05-25 フェライト遮蔽構造を備えた半導体パッケージ Active JP5138181B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2005-0070396 2005-08-01
KR1020050070396A KR100606654B1 (ko) 2005-08-01 2005-08-01 전자파 장해 저감용 페라이트 차폐 구조를 구비하는 반도체패키지 및 그 제조 방법
US11/387,848 2006-03-24
US11/387,848 US7495317B2 (en) 2005-08-01 2006-03-24 Semiconductor package with ferrite shielding structure

Publications (3)

Publication Number Publication Date
JP2007043090A JP2007043090A (ja) 2007-02-15
JP2007043090A5 JP2007043090A5 (enExample) 2009-07-02
JP5138181B2 true JP5138181B2 (ja) 2013-02-06

Family

ID=37681296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006145633A Active JP5138181B2 (ja) 2005-08-01 2006-05-25 フェライト遮蔽構造を備えた半導体パッケージ

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Country Link
JP (1) JP5138181B2 (enExample)
DE (1) DE102006036963A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721872B1 (en) 2011-02-18 2017-08-01 Amkor Technology, Inc. Methods and structures for increasing the allowable die size in TMV packages
KR101374148B1 (ko) * 2012-06-08 2014-03-17 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 이의 제조 방법
US9799592B2 (en) 2013-11-19 2017-10-24 Amkor Technology, Inc. Semicondutor device with through-silicon via-less deep wells
KR101366461B1 (ko) 2012-11-20 2014-02-26 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
KR101607981B1 (ko) 2013-11-04 2016-03-31 앰코 테크놀로지 코리아 주식회사 반도체 패키지용 인터포저 및 이의 제조 방법, 제조된 인터포저를 이용한 반도체 패키지
US9960328B2 (en) 2016-09-06 2018-05-01 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2870162B2 (ja) * 1990-07-20 1999-03-10 セイコーエプソン株式会社 半導体装置およびその製造方法
KR100313706B1 (ko) * 1999-09-29 2001-11-26 윤종용 재배치 웨이퍼 레벨 칩 사이즈 패키지 및 그 제조방법
JP3923368B2 (ja) * 2002-05-22 2007-05-30 シャープ株式会社 半導体素子の製造方法
JP4161911B2 (ja) * 2004-01-30 2008-10-08 ソニー株式会社 集積回路装置
EP1594163A1 (en) * 2004-05-03 2005-11-09 Commissariat A L'energie Atomique A screened electrical device and a process for manufacturing the same

Also Published As

Publication number Publication date
DE102006036963A1 (de) 2007-02-15
JP2007043090A (ja) 2007-02-15

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