JP5131285B2 - シリコン単結晶成長装置および石英ルツボ - Google Patents

シリコン単結晶成長装置および石英ルツボ Download PDF

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Publication number
JP5131285B2
JP5131285B2 JP2009554292A JP2009554292A JP5131285B2 JP 5131285 B2 JP5131285 B2 JP 5131285B2 JP 2009554292 A JP2009554292 A JP 2009554292A JP 2009554292 A JP2009554292 A JP 2009554292A JP 5131285 B2 JP5131285 B2 JP 5131285B2
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Prior art keywords
single crystal
silicon single
quartz crucible
diameter
peripheral wall
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JP2009554292A
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English (en)
Japanese (ja)
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JPWO2009104533A1 (ja
Inventor
俊幸 藤原
健彦 細井
中村　　剛
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
JP2009554292A 2008-02-18 2009-02-16 シリコン単結晶成長装置および石英ルツボ Active JP5131285B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009554292A JP5131285B2 (ja) 2008-02-18 2009-02-16 シリコン単結晶成長装置および石英ルツボ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008036678 2008-02-18
JP2008036678 2008-02-18
PCT/JP2009/052485 WO2009104533A1 (ja) 2008-02-18 2009-02-16 シリコン単結晶成長装置および石英ルツボ
JP2009554292A JP5131285B2 (ja) 2008-02-18 2009-02-16 シリコン単結晶成長装置および石英ルツボ

Publications (2)

Publication Number Publication Date
JPWO2009104533A1 JPWO2009104533A1 (ja) 2011-06-23
JP5131285B2 true JP5131285B2 (ja) 2013-01-30

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JP2009554292A Active JP5131285B2 (ja) 2008-02-18 2009-02-16 シリコン単結晶成長装置および石英ルツボ

Country Status (3)

Country Link
JP (1) JP5131285B2 (de)
DE (1) DE112009000239B4 (de)
WO (1) WO2009104533A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103911659A (zh) * 2014-04-15 2014-07-09 宁夏大学 提高400mm以上大直径单晶硅拉晶稳定性的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2380555T3 (es) 2007-11-05 2012-05-16 St. Jude Medical, Inc. Válvulas protésicas del corazón plegables/expansibles con soportes de stent no expansible y características de recuperación
CN107945180A (zh) * 2017-12-26 2018-04-20 浙江大学台州研究院 源于抛光的石英晶片表面浅划痕的视觉检测方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006169016A (ja) * 2004-12-14 2006-06-29 Sumco Corp シリコン単結晶の製造方法
JP2007001819A (ja) * 2005-06-24 2007-01-11 Sumco Corp シリコン単結晶及びシリコン単結晶製造方法
JP2007223879A (ja) * 2006-02-27 2007-09-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013324B2 (ja) 1998-03-31 2007-11-28 株式会社Ｓｕｍｃｏ 単結晶成長方法
JP4277681B2 (ja) * 2003-12-26 2009-06-10 株式会社Ｓｕｍｃｏ 単結晶引上げ装置の融液表面位置検出装置及びその単結晶引上げ装置
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Ｓｕｍｃｏ 単結晶の引上げ方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006169016A (ja) * 2004-12-14 2006-06-29 Sumco Corp シリコン単結晶の製造方法
JP2007001819A (ja) * 2005-06-24 2007-01-11 Sumco Corp シリコン単結晶及びシリコン単結晶製造方法
JP2007223879A (ja) * 2006-02-27 2007-09-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103911659A (zh) * 2014-04-15 2014-07-09 宁夏大学 提高400mm以上大直径单晶硅拉晶稳定性的方法

Also Published As

Publication number Publication date
WO2009104533A1 (ja) 2009-08-27
JPWO2009104533A1 (ja) 2011-06-23
DE112009000239T5 (de) 2011-06-22
DE112009000239B4 (de) 2021-01-28

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