JP5130225B2 - 音響的な信号を受信および／または発生させるためのマイクロマシニング構造体、マイクロマシニング構造体を製造するための方法、およびマイクロマシニング構造体の使用法 - Google Patents

音響的な信号を受信および／または発生させるためのマイクロマシニング構造体、マイクロマシニング構造体を製造するための方法、およびマイクロマシニング構造体の使用法 Download PDF

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Publication number
JP5130225B2
JP5130225B2 JP2008542704A JP2008542704A JP5130225B2 JP 5130225 B2 JP5130225 B2 JP 5130225B2 JP 2008542704 A JP2008542704 A JP 2008542704A JP 2008542704 A JP2008542704 A JP 2008542704A JP 5130225 B2 JP5130225 B2 JP 5130225B2
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diaphragm
micromachining
counter element
layers
micromachining structure
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JP2008542704A
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Japanese (ja)
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JP2009517940A (ja
JP2009517940A5 (enExample
Inventor
フィッシャー フランク
シェリング クリストフ
ヴァイス シュテファン
シュロッサー ローマン
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)
JP2008542704A 2005-11-29 2006-11-14 音響的な信号を受信および／または発生させるためのマイクロマシニング構造体、マイクロマシニング構造体を製造するための方法、およびマイクロマシニング構造体の使用法 Expired - Fee Related JP5130225B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005056759A DE102005056759A1 (de) 2005-11-29 2005-11-29 Mikromechanische Struktur zum Empfang und/oder zur Erzeugung von akustischen Signalen, Verfahren zur Herstellung einer mikromechanischen Struktur und Verwendung einer mikromechanischen Struktur
DE102005056759.2 2005-11-29
PCT/EP2006/068419 WO2007062975A1 (de) 2005-11-29 2006-11-14 Mikromechanische struktur zum empfang und/oder zur erzeugung von akustischen signalen, verfahren zur herstellung einer mikromechanischen struktur und verwendung einer mikromechanischen struktur

Publications (3)

Publication Number Publication Date
JP2009517940A JP2009517940A (ja) 2009-04-30
JP2009517940A5 JP2009517940A5 (enExample) 2012-01-05
JP5130225B2 true JP5130225B2 (ja) 2013-01-30

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JP2008542704A Expired - Fee Related JP5130225B2 (ja) 2005-11-29 2006-11-14 音響的な信号を受信および／または発生させるためのマイクロマシニング構造体、マイクロマシニング構造体を製造するための方法、およびマイクロマシニング構造体の使用法

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Country Link
US (1) US7902615B2 (enExample)
EP (1) EP1958480A1 (enExample)
JP (1) JP5130225B2 (enExample)
DE (1) DE102005056759A1 (enExample)
WO (1) WO2007062975A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049490B2 (en) * 2008-08-19 2011-11-01 Infineon Technologies Ag Silicon MEMS resonator devices and methods
US7832279B2 (en) * 2008-09-11 2010-11-16 Infineon Technologies Ag Semiconductor device including a pressure sensor
US8723276B2 (en) * 2008-09-11 2014-05-13 Infineon Technologies Ag Semiconductor structure with lamella defined by singulation trench
DE102009000583A1 (de) * 2009-02-03 2010-08-05 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zum Betreiben eines solchen Bauelements
DE102009028177A1 (de) 2009-07-31 2011-02-10 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zur Herstellung eines solchen Bauelements
DE102010008044B4 (de) * 2010-02-16 2016-11-24 Epcos Ag MEMS-Mikrofon und Verfahren zur Herstellung
FR2963192B1 (fr) * 2010-07-22 2013-07-19 Commissariat Energie Atomique Générateur d'impulsions de pression de type mems
FR2963099B1 (fr) 2010-07-22 2013-10-04 Commissariat Energie Atomique Capteur de pression dynamique mems, en particulier pour des applications a la realisation de microphones
EP2420470B1 (en) * 2010-08-18 2015-10-14 Nxp B.V. MEMS Microphone
US8518732B2 (en) 2010-12-22 2013-08-27 Infineon Technologies Ag Method of providing a semiconductor structure with forming a sacrificial structure
US8737674B2 (en) 2011-02-11 2014-05-27 Infineon Technologies Ag Housed loudspeaker array
US9031266B2 (en) 2011-10-11 2015-05-12 Infineon Technologies Ag Electrostatic loudspeaker with membrane performing out-of-plane displacement
DE112011105929T5 (de) * 2011-12-09 2014-09-11 Epcos Ag MEMS-Mikrofon mit doppelter Rückplatte und einem unsymmetrischen Verstärker-Eingangsanschluss
DE102012203373A1 (de) 2012-03-05 2013-09-05 Robert Bosch Gmbh Mikromechanische Schallwandleranordnung und ein entsprechendes Herstellungsverfahren
WO2013167183A1 (en) 2012-05-09 2013-11-14 Epcos Ag Mems microphone assembly and method of operating the mems microphone assembly
ITTO20130225A1 (it) 2013-03-21 2014-09-22 St Microelectronics Srl Struttura sensibile microelettromeccanica per un trasduttore acustico capacitivo includente un elemento di limitazione delle oscillazioni di una membrana, e relativo processo di fabbricazione
ITTO20130540A1 (it) 2013-06-28 2014-12-29 St Microelectronics Srl Dispositivo mems dotato di membrana sospesa e relativo procedimento di fabbricazione
US9369804B2 (en) * 2014-07-28 2016-06-14 Robert Bosch Gmbh MEMS membrane overtravel stop
JP6589166B2 (ja) * 2015-06-09 2019-10-16 株式会社オーディオテクニカ 無指向性マイクロホン
DE102016125082B3 (de) * 2016-12-21 2018-05-09 Infineon Technologies Ag Halbleitervorrichtung, mikrofon und verfahren zum herstellen einer halbleitervorrichtung
US10766763B2 (en) 2018-09-28 2020-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Sidewall stopper for MEMS device
US11758312B2 (en) * 2021-06-01 2023-09-12 Xmems Taiwan Co., Ltd. Sound producing package structure and manufacturing method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533795A (en) * 1983-07-07 1985-08-06 American Telephone And Telegraph Integrated electroacoustic transducer
DE3807251A1 (de) * 1988-03-05 1989-09-14 Sennheiser Electronic Kapazitiver schallwandler
US5146435A (en) * 1989-12-04 1992-09-08 The Charles Stark Draper Laboratory, Inc. Acoustic transducer
US5452268A (en) * 1994-08-12 1995-09-19 The Charles Stark Draper Laboratory, Inc. Acoustic transducer with improved low frequency response
US6243474B1 (en) * 1996-04-18 2001-06-05 California Institute Of Technology Thin film electret microphone
DK79198A (da) * 1998-06-11 1999-12-12 Microtronic As Fremgangsmåde til fremstilling af en transducer med en membran med en forudbestemt opspændingskraft
EP1105344B1 (de) * 1998-08-11 2012-04-25 Infineon Technologies AG Mikromechanischer sensor und verfahren zu seiner herstellung
DK1214864T3 (da) * 1999-09-06 2003-08-25 Sonionmems As Siliciumbaseret sensorsystem
ITVA20000042A1 (it) 2000-12-15 2002-06-15 St Microelectronics Srl Sensore di pressione monoliticamente integrato e relativo processo direalizzazione.
TW518900B (en) * 2001-09-11 2003-01-21 Ind Tech Res Inst Structure of electret silicon capacitive type microphone and method for making the same
US7146016B2 (en) 2001-11-27 2006-12-05 Center For National Research Initiatives Miniature condenser microphone and fabrication method therefor
JP4396975B2 (ja) * 2004-05-10 2010-01-13 学校法人日本大学 コンデンサ型音響変換装置及びその製造方法

Also Published As

Publication number Publication date
US7902615B2 (en) 2011-03-08
US20100002543A1 (en) 2010-01-07
WO2007062975A1 (de) 2007-06-07
JP2009517940A (ja) 2009-04-30
DE102005056759A1 (de) 2007-05-31
EP1958480A1 (de) 2008-08-20

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