JP2009517940A5 - - Google Patents

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Publication number
JP2009517940A5
JP2009517940A5 JP2008542704A JP2008542704A JP2009517940A5 JP 2009517940 A5 JP2009517940 A5 JP 2009517940A5 JP 2008542704 A JP2008542704 A JP 2008542704A JP 2008542704 A JP2008542704 A JP 2008542704A JP 2009517940 A5 JP2009517940 A5 JP 2009517940A5
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JP
Japan
Prior art keywords
diaphragm
layer
nitride
polysilicon
oxide
Prior art date
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JP2008542704A
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English (en)
Japanese (ja)
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JP2009517940A (ja
JP5130225B2 (ja
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Priority claimed from DE102005056759A external-priority patent/DE102005056759A1/de
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Publication of JP2009517940A publication Critical patent/JP2009517940A/ja
Publication of JP2009517940A5 publication Critical patent/JP2009517940A5/ja
Application granted granted Critical
Publication of JP5130225B2 publication Critical patent/JP5130225B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008542704A 2005-11-29 2006-11-14 音響的な信号を受信および／または発生させるためのマイクロマシニング構造体、マイクロマシニング構造体を製造するための方法、およびマイクロマシニング構造体の使用法 Expired - Fee Related JP5130225B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005056759.2 2005-11-29
DE102005056759A DE102005056759A1 (de) 2005-11-29 2005-11-29 Mikromechanische Struktur zum Empfang und/oder zur Erzeugung von akustischen Signalen, Verfahren zur Herstellung einer mikromechanischen Struktur und Verwendung einer mikromechanischen Struktur
PCT/EP2006/068419 WO2007062975A1 (de) 2005-11-29 2006-11-14 Mikromechanische struktur zum empfang und/oder zur erzeugung von akustischen signalen, verfahren zur herstellung einer mikromechanischen struktur und verwendung einer mikromechanischen struktur

Publications (3)

Publication Number Publication Date
JP2009517940A JP2009517940A (ja) 2009-04-30
JP2009517940A5 true JP2009517940A5 (enExample) 2012-01-05
JP5130225B2 JP5130225B2 (ja) 2013-01-30

Family

ID=37685892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008542704A Expired - Fee Related JP5130225B2 (ja) 2005-11-29 2006-11-14 音響的な信号を受信および／または発生させるためのマイクロマシニング構造体、マイクロマシニング構造体を製造するための方法、およびマイクロマシニング構造体の使用法

Country Status (5)

Country Link
US (1) US7902615B2 (enExample)
EP (1) EP1958480A1 (enExample)
JP (1) JP5130225B2 (enExample)
DE (1) DE102005056759A1 (enExample)
WO (1) WO2007062975A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049490B2 (en) * 2008-08-19 2011-11-01 Infineon Technologies Ag Silicon MEMS resonator devices and methods
US7832279B2 (en) * 2008-09-11 2010-11-16 Infineon Technologies Ag Semiconductor device including a pressure sensor
US8723276B2 (en) * 2008-09-11 2014-05-13 Infineon Technologies Ag Semiconductor structure with lamella defined by singulation trench
DE102009000583A1 (de) * 2009-02-03 2010-08-05 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zum Betreiben eines solchen Bauelements
DE102009028177A1 (de) * 2009-07-31 2011-02-10 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zur Herstellung eines solchen Bauelements
DE102010008044B4 (de) * 2010-02-16 2016-11-24 Epcos Ag MEMS-Mikrofon und Verfahren zur Herstellung
FR2963192B1 (fr) 2010-07-22 2013-07-19 Commissariat Energie Atomique Générateur d'impulsions de pression de type mems
FR2963099B1 (fr) 2010-07-22 2013-10-04 Commissariat Energie Atomique Capteur de pression dynamique mems, en particulier pour des applications a la realisation de microphones
EP2420470B1 (en) * 2010-08-18 2015-10-14 Nxp B.V. MEMS Microphone
US8518732B2 (en) 2010-12-22 2013-08-27 Infineon Technologies Ag Method of providing a semiconductor structure with forming a sacrificial structure
US8737674B2 (en) 2011-02-11 2014-05-27 Infineon Technologies Ag Housed loudspeaker array
US9031266B2 (en) 2011-10-11 2015-05-12 Infineon Technologies Ag Electrostatic loudspeaker with membrane performing out-of-plane displacement
WO2013083203A1 (en) * 2011-12-09 2013-06-13 Epcos Ag Double backplate mems microphone with a single-ended amplifier input port
DE102012203373A1 (de) 2012-03-05 2013-09-05 Robert Bosch Gmbh Mikromechanische Schallwandleranordnung und ein entsprechendes Herstellungsverfahren
US9781518B2 (en) 2012-05-09 2017-10-03 Tdk Corporation MEMS microphone assembly and method of operating the MEMS microphone assembly
ITTO20130225A1 (it) * 2013-03-21 2014-09-22 St Microelectronics Srl Struttura sensibile microelettromeccanica per un trasduttore acustico capacitivo includente un elemento di limitazione delle oscillazioni di una membrana, e relativo processo di fabbricazione
ITTO20130540A1 (it) 2013-06-28 2014-12-29 St Microelectronics Srl Dispositivo mems dotato di membrana sospesa e relativo procedimento di fabbricazione
US9369804B2 (en) * 2014-07-28 2016-06-14 Robert Bosch Gmbh MEMS membrane overtravel stop
JP6589166B2 (ja) * 2015-06-09 2019-10-16 株式会社オーディオテクニカ 無指向性マイクロホン
DE102016125082B3 (de) * 2016-12-21 2018-05-09 Infineon Technologies Ag Halbleitervorrichtung, mikrofon und verfahren zum herstellen einer halbleitervorrichtung
US10766763B2 (en) 2018-09-28 2020-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Sidewall stopper for MEMS device
US11758312B2 (en) * 2021-06-01 2023-09-12 Xmems Taiwan Co., Ltd. Sound producing package structure and manufacturing method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533795A (en) * 1983-07-07 1985-08-06 American Telephone And Telegraph Integrated electroacoustic transducer
DE3807251A1 (de) 1988-03-05 1989-09-14 Sennheiser Electronic Kapazitiver schallwandler
US5146435A (en) * 1989-12-04 1992-09-08 The Charles Stark Draper Laboratory, Inc. Acoustic transducer
US5452268A (en) 1994-08-12 1995-09-19 The Charles Stark Draper Laboratory, Inc. Acoustic transducer with improved low frequency response
EP0981823A1 (en) * 1996-04-18 2000-03-01 California Institute Of Technology Thin film electret microphone
DK79198A (da) * 1998-06-11 1999-12-12 Microtronic As Fremgangsmåde til fremstilling af en transducer med en membran med en forudbestemt opspændingskraft
EP1105344B1 (de) * 1998-08-11 2012-04-25 Infineon Technologies AG Mikromechanischer sensor und verfahren zu seiner herstellung
DK1214864T3 (da) * 1999-09-06 2003-08-25 Sonionmems As Siliciumbaseret sensorsystem
ITVA20000042A1 (it) * 2000-12-15 2002-06-15 St Microelectronics Srl Sensore di pressione monoliticamente integrato e relativo processo direalizzazione.
TW518900B (en) * 2001-09-11 2003-01-21 Ind Tech Res Inst Structure of electret silicon capacitive type microphone and method for making the same
US7146016B2 (en) 2001-11-27 2006-12-05 Center For National Research Initiatives Miniature condenser microphone and fabrication method therefor
JP4396975B2 (ja) * 2004-05-10 2010-01-13 学校法人日本大学 コンデンサ型音響変換装置及びその製造方法

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