JP5129439B2 - 多孔質発光層を有する発光素子 - Google Patents

多孔質発光層を有する発光素子 Download PDF

Info

Publication number
JP5129439B2
JP5129439B2 JP2005149613A JP2005149613A JP5129439B2 JP 5129439 B2 JP5129439 B2 JP 5129439B2 JP 2005149613 A JP2005149613 A JP 2005149613A JP 2005149613 A JP2005149613 A JP 2005149613A JP 5129439 B2 JP5129439 B2 JP 5129439B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
wavelength
porous
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005149613A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006121037A (ja
JP2006121037A5 (enExample
Inventor
チェン チェンチュアン
Original Assignee
ジェネシス フォトニクス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ジェネシス フォトニクス インコーポレイテッド filed Critical ジェネシス フォトニクス インコーポレイテッド
Publication of JP2006121037A publication Critical patent/JP2006121037A/ja
Publication of JP2006121037A5 publication Critical patent/JP2006121037A5/ja
Application granted granted Critical
Publication of JP5129439B2 publication Critical patent/JP5129439B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
JP2005149613A 2004-10-20 2005-05-23 多孔質発光層を有する発光素子 Expired - Fee Related JP5129439B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093131856A TWI249966B (en) 2004-10-20 2004-10-20 Light-emitting device having porous light-emitting layer
TW093131856 2004-10-20

Publications (3)

Publication Number Publication Date
JP2006121037A JP2006121037A (ja) 2006-05-11
JP2006121037A5 JP2006121037A5 (enExample) 2008-06-19
JP5129439B2 true JP5129439B2 (ja) 2013-01-30

Family

ID=36179787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005149613A Expired - Fee Related JP5129439B2 (ja) 2004-10-20 2005-05-23 多孔質発光層を有する発光素子

Country Status (4)

Country Link
US (1) US7271417B2 (enExample)
JP (1) JP5129439B2 (enExample)
KR (1) KR101141285B1 (enExample)
TW (1) TWI249966B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101194468B1 (ko) * 2004-03-25 2012-10-24 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자
TWI248220B (en) * 2005-04-14 2006-01-21 Genesis Photonics Inc White light device having light-emitting diode
US8174025B2 (en) * 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
KR100782433B1 (ko) * 2006-09-22 2007-12-06 서울옵토디바이스주식회사 질화물 반도체 발광 다이오드를 제조하는 방법 및 그것에의해 제조된 발광 다이오드
US8416823B2 (en) * 2007-05-04 2013-04-09 The Board Of Trustees Of The University Of Illinois Quantum well active region with three dimensional barriers and fabrication
KR100767258B1 (ko) * 2007-05-15 2007-10-17 주식회사 시스넥스 질화물 반도체 발광소자 및 이의 제조방법
US8044381B2 (en) * 2007-07-30 2011-10-25 Hewlett-Packard Development Company, L.P. Light emitting diode (LED)
US20090034977A1 (en) * 2007-07-30 2009-02-05 Michael Renne Ty Tan MULTIPLEXING HIGH SPEED LIGHT EMITTING DIODES (LEDs)
JP4445556B2 (ja) 2008-02-18 2010-04-07 国立大学法人広島大学 発光素子およびその製造方法
WO2009118784A1 (ja) * 2008-03-26 2009-10-01 国立大学法人広島大学 発光素子およびその製造方法
US8839327B2 (en) * 2008-06-25 2014-09-16 At&T Intellectual Property Ii, Lp Method and apparatus for presenting media programs
TWI416757B (zh) * 2008-10-13 2013-11-21 Advanced Optoelectronic Tech 多波長發光二極體及其製造方法
WO2010101335A1 (en) 2009-03-06 2010-09-10 Chung Hoon Lee Light emitting device
KR20130007557A (ko) 2010-01-27 2013-01-18 예일 유니버시티 ＧａＮ 소자의 전도도 기반 선택적 에칭 및 그의 응용
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
US11043792B2 (en) 2014-09-30 2021-06-22 Yale University Method for GaN vertical microcavity surface emitting laser (VCSEL)
US11018231B2 (en) * 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
KR102303459B1 (ko) 2015-03-11 2021-09-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
JP6961225B2 (ja) 2015-05-19 2021-11-05 イェール ユニバーシティーYale University 格子整合クラッド層を有する高い閉じ込め係数のｉｉｉ窒化物端面発光レーザーダイオードに関する方法およびデバイス
US10665750B2 (en) * 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
TW202211498A (zh) * 2020-08-04 2022-03-16 英商普羅科技有限公司 Led裝置及製造方法
US20220259766A1 (en) * 2021-02-16 2022-08-18 Applied Materials, Inc. Indium-gallium-nitride light emitting diodes with increased quantum efficiency

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939732A (en) * 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
JP3660801B2 (ja) * 1998-06-04 2005-06-15 三菱電線工業株式会社 ＧａＮ系半導体発光素子
US6376864B1 (en) * 1999-07-06 2002-04-23 Tien Yang Wang Semiconductor light-emitting device and method for manufacturing the same
JP3624794B2 (ja) * 2000-05-24 2005-03-02 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP4822150B2 (ja) 2002-12-16 2011-11-24 独立行政法人科学技術振興機構 不均一な量子ドットを有する半導体積層構造、それを用いた発光ダイオード、半導体レーザダイオード及び半導体光増幅器並びにそれらの製造方法

Also Published As

Publication number Publication date
KR20060046155A (ko) 2006-05-17
TW200614853A (en) 2006-05-01
TWI249966B (en) 2006-02-21
JP2006121037A (ja) 2006-05-11
KR101141285B1 (ko) 2012-05-04
US20060081832A1 (en) 2006-04-20
US7271417B2 (en) 2007-09-18

Similar Documents

Publication Publication Date Title
JP5129439B2 (ja) 多孔質発光層を有する発光素子
KR100347126B1 (ko) 백색ｌｅｄ 및 중간색ｌｅｄ
KR100845856B1 (ko) 발광 소자 패키지 및 그 제조방법
KR101580739B1 (ko) 발광 장치
CN107170866A (zh) 一种多光谱发光二极管结构
CN102347431A (zh) 半导体发光二极管组件
TWI314786B (enExample)
CA2583504A1 (en) High efficiency light-emitting diodes
US6120909A (en) Monolithic silicon-based nitride display device
KR100422944B1 (ko) 반도체 엘이디(ｌｅｄ) 소자
KR20230118056A (ko) 개선된 연색성을 갖는 led 조명 장치 및 led 필라멘트
JP2000082845A (ja) 白色ｌｅｄ
TW201301570A (zh) 多光色發光二極體及其製作方法
JP2004165604A (ja) 発光ダイオードおよびその製造法
CN119923040A (zh) 发光二极管芯片组、显示背光模组及照明模组
CN1166009C (zh) 用于产生混合色电磁辐射的半导体元件
CN100395900C (zh) 具多孔性发光层的发光元件
KR100552333B1 (ko) 백색 발광장치
JP2001007401A (ja) 化合物半導体発光素子
JP2008270669A (ja) 発光素子
KR100891826B1 (ko) 반도체 발광소자
TW201013891A (en) Luminescent device and method for grouping of radiation-emitting semiconductor chips
CN120076520A (zh) 发光结构及照明装置
EP1670068A1 (en) Manufacturing method and device for white light emitting
CN116314505A (zh) 一种双发光区及多发光区的单色led

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080507

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080507

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110222

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110520

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110525

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120509

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121017

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121102

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5129439

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151109

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees