JP2006121037A5 - - Google Patents

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Publication number
JP2006121037A5
JP2006121037A5 JP2005149613A JP2005149613A JP2006121037A5 JP 2006121037 A5 JP2006121037 A5 JP 2006121037A5 JP 2005149613 A JP2005149613 A JP 2005149613A JP 2005149613 A JP2005149613 A JP 2005149613A JP 2006121037 A5 JP2006121037 A5 JP 2006121037A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005149613A
Other languages
Japanese (ja)
Other versions
JP2006121037A (ja
JP5129439B2 (ja
Filing date
Publication date
Priority claimed from TW093131856A external-priority patent/TWI249966B/zh
Application filed filed Critical
Publication of JP2006121037A publication Critical patent/JP2006121037A/ja
Publication of JP2006121037A5 publication Critical patent/JP2006121037A5/ja
Application granted granted Critical
Publication of JP5129439B2 publication Critical patent/JP5129439B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005149613A 2004-10-20 2005-05-23 多孔質発光層を有する発光素子 Expired - Fee Related JP5129439B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093131856A TWI249966B (en) 2004-10-20 2004-10-20 Light-emitting device having porous light-emitting layer
TW093131856 2004-10-20

Publications (3)

Publication Number Publication Date
JP2006121037A JP2006121037A (ja) 2006-05-11
JP2006121037A5 true JP2006121037A5 (enExample) 2008-06-19
JP5129439B2 JP5129439B2 (ja) 2013-01-30

Family

ID=36179787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005149613A Expired - Fee Related JP5129439B2 (ja) 2004-10-20 2005-05-23 多孔質発光層を有する発光素子

Country Status (4)

Country Link
US (1) US7271417B2 (enExample)
JP (1) JP5129439B2 (enExample)
KR (1) KR101141285B1 (enExample)
TW (1) TWI249966B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737625B2 (en) * 2004-03-25 2010-06-15 Idemitsu Kosan Co., Ltd. Organic electroluminescent device with carrier blocking layer interposed between two emitting layers
TWI248220B (en) * 2005-04-14 2006-01-21 Genesis Photonics Inc White light device having light-emitting diode
US8174025B2 (en) * 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
KR100782433B1 (ko) * 2006-09-22 2007-12-06 서울옵토디바이스주식회사 질화물 반도체 발광 다이오드를 제조하는 방법 및 그것에의해 제조된 발광 다이오드
US8416823B2 (en) * 2007-05-04 2013-04-09 The Board Of Trustees Of The University Of Illinois Quantum well active region with three dimensional barriers and fabrication
KR100767258B1 (ko) * 2007-05-15 2007-10-17 주식회사 시스넥스 질화물 반도체 발광소자 및 이의 제조방법
US20090034977A1 (en) * 2007-07-30 2009-02-05 Michael Renne Ty Tan MULTIPLEXING HIGH SPEED LIGHT EMITTING DIODES (LEDs)
US8044381B2 (en) * 2007-07-30 2011-10-25 Hewlett-Packard Development Company, L.P. Light emitting diode (LED)
JP4445556B2 (ja) * 2008-02-18 2010-04-07 国立大学法人広島大学 発光素子およびその製造方法
WO2009118784A1 (ja) * 2008-03-26 2009-10-01 国立大学法人広島大学 発光素子およびその製造方法
US8839327B2 (en) * 2008-06-25 2014-09-16 At&T Intellectual Property Ii, Lp Method and apparatus for presenting media programs
TWI416757B (zh) * 2008-10-13 2013-11-21 Advanced Optoelectronic Tech 多波長發光二極體及其製造方法
WO2010101335A1 (en) * 2009-03-06 2010-09-10 Chung Hoon Lee Light emitting device
WO2011094391A1 (en) 2010-01-27 2011-08-04 Yale University Conductivity based selective etch for gan devices and applications thereof
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
CN107078190B (zh) 2014-09-30 2020-09-08 耶鲁大学 用于GaN垂直微腔面发射激光器(VCSEL)的方法
US11018231B2 (en) * 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
KR102303459B1 (ko) 2015-03-11 2021-09-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
JP6961225B2 (ja) 2015-05-19 2021-11-05 イェール ユニバーシティーYale University 格子整合クラッド層を有する高い閉じ込め係数のｉｉｉ窒化物端面発光レーザーダイオードに関する方法およびデバイス
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device
TW202221937A (zh) * 2020-08-04 2022-06-01 英商普羅科技有限公司 Led裝置及製造方法
US20220259766A1 (en) * 2021-02-16 2022-08-18 Applied Materials, Inc. Indium-gallium-nitride light emitting diodes with increased quantum efficiency

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939732A (en) * 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
JP3660801B2 (ja) * 1998-06-04 2005-06-15 三菱電線工業株式会社 ＧａＮ系半導体発光素子
US6376864B1 (en) * 1999-07-06 2002-04-23 Tien Yang Wang Semiconductor light-emitting device and method for manufacturing the same
JP3624794B2 (ja) * 2000-05-24 2005-03-02 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US20060071218A1 (en) 2002-12-16 2006-04-06 Japan Science And Technology Agency Semiconductior multilayer structurehaving inhomogeneous quantum dots, light-emitting diode using same, semiconductor laser diode, semiconductor optical amplifier, and method for manufacturing them

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