TWI249966B - Light-emitting device having porous light-emitting layer - Google Patents

Light-emitting device having porous light-emitting layer Download PDF

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Publication number
TWI249966B
TWI249966B TW093131856A TW93131856A TWI249966B TW I249966 B TWI249966 B TW I249966B TW 093131856 A TW093131856 A TW 093131856A TW 93131856 A TW93131856 A TW 93131856A TW I249966 B TWI249966 B TW I249966B
Authority
TW
Taiwan
Prior art keywords
layer
light
emitting
porous
wavelength
Prior art date
Application number
TW093131856A
Other languages
English (en)
Chinese (zh)
Other versions
TW200614853A (en
Inventor
Jeng-Chiuan Chen
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to TW093131856A priority Critical patent/TWI249966B/zh
Priority to JP2005149613A priority patent/JP5129439B2/ja
Priority to KR1020050043572A priority patent/KR101141285B1/ko
Priority to US11/135,639 priority patent/US7271417B2/en
Application granted granted Critical
Publication of TWI249966B publication Critical patent/TWI249966B/zh
Publication of TW200614853A publication Critical patent/TW200614853A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
TW093131856A 2004-10-20 2004-10-20 Light-emitting device having porous light-emitting layer TWI249966B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW093131856A TWI249966B (en) 2004-10-20 2004-10-20 Light-emitting device having porous light-emitting layer
JP2005149613A JP5129439B2 (ja) 2004-10-20 2005-05-23 多孔質発光層を有する発光素子
KR1020050043572A KR101141285B1 (ko) 2004-10-20 2005-05-24 다공성 발광층을 포함하는 발광 소자
US11/135,639 US7271417B2 (en) 2004-10-20 2005-05-24 Light-emitting element with porous light-emitting layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093131856A TWI249966B (en) 2004-10-20 2004-10-20 Light-emitting device having porous light-emitting layer

Publications (2)

Publication Number Publication Date
TWI249966B true TWI249966B (en) 2006-02-21
TW200614853A TW200614853A (en) 2006-05-01

Family

ID=36179787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093131856A TWI249966B (en) 2004-10-20 2004-10-20 Light-emitting device having porous light-emitting layer

Country Status (4)

Country Link
US (1) US7271417B2 (enExample)
JP (1) JP5129439B2 (enExample)
KR (1) KR101141285B1 (enExample)
TW (1) TWI249966B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101194468B1 (ko) * 2004-03-25 2012-10-24 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자
TWI248220B (en) * 2005-04-14 2006-01-21 Genesis Photonics Inc White light device having light-emitting diode
US8174025B2 (en) * 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
KR100782433B1 (ko) * 2006-09-22 2007-12-06 서울옵토디바이스주식회사 질화물 반도체 발광 다이오드를 제조하는 방법 및 그것에의해 제조된 발광 다이오드
US8416823B2 (en) * 2007-05-04 2013-04-09 The Board Of Trustees Of The University Of Illinois Quantum well active region with three dimensional barriers and fabrication
KR100767258B1 (ko) * 2007-05-15 2007-10-17 주식회사 시스넥스 질화물 반도체 발광소자 및 이의 제조방법
US8044381B2 (en) * 2007-07-30 2011-10-25 Hewlett-Packard Development Company, L.P. Light emitting diode (LED)
US20090034977A1 (en) * 2007-07-30 2009-02-05 Michael Renne Ty Tan MULTIPLEXING HIGH SPEED LIGHT EMITTING DIODES (LEDs)
JP4445556B2 (ja) 2008-02-18 2010-04-07 国立大学法人広島大学 発光素子およびその製造方法
WO2009118784A1 (ja) * 2008-03-26 2009-10-01 国立大学法人広島大学 発光素子およびその製造方法
US8839327B2 (en) * 2008-06-25 2014-09-16 At&T Intellectual Property Ii, Lp Method and apparatus for presenting media programs
TWI416757B (zh) * 2008-10-13 2013-11-21 Advanced Optoelectronic Tech 多波長發光二極體及其製造方法
WO2010101335A1 (en) 2009-03-06 2010-09-10 Chung Hoon Lee Light emitting device
KR20130007557A (ko) 2010-01-27 2013-01-18 예일 유니버시티 ＧａＮ 소자의 전도도 기반 선택적 에칭 및 그의 응용
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
US11043792B2 (en) 2014-09-30 2021-06-22 Yale University Method for GaN vertical microcavity surface emitting laser (VCSEL)
US11018231B2 (en) * 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
KR102303459B1 (ko) 2015-03-11 2021-09-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
JP6961225B2 (ja) 2015-05-19 2021-11-05 イェール ユニバーシティーYale University 格子整合クラッド層を有する高い閉じ込め係数のｉｉｉ窒化物端面発光レーザーダイオードに関する方法およびデバイス
US10665750B2 (en) * 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
TW202211498A (zh) * 2020-08-04 2022-03-16 英商普羅科技有限公司 Led裝置及製造方法
US20220259766A1 (en) * 2021-02-16 2022-08-18 Applied Materials, Inc. Indium-gallium-nitride light emitting diodes with increased quantum efficiency

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939732A (en) * 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
JP3660801B2 (ja) * 1998-06-04 2005-06-15 三菱電線工業株式会社 ＧａＮ系半導体発光素子
US6376864B1 (en) * 1999-07-06 2002-04-23 Tien Yang Wang Semiconductor light-emitting device and method for manufacturing the same
JP3624794B2 (ja) * 2000-05-24 2005-03-02 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP4822150B2 (ja) 2002-12-16 2011-11-24 独立行政法人科学技術振興機構 不均一な量子ドットを有する半導体積層構造、それを用いた発光ダイオード、半導体レーザダイオード及び半導体光増幅器並びにそれらの製造方法

Also Published As

Publication number Publication date
KR20060046155A (ko) 2006-05-17
TW200614853A (en) 2006-05-01
JP2006121037A (ja) 2006-05-11
KR101141285B1 (ko) 2012-05-04
US20060081832A1 (en) 2006-04-20
JP5129439B2 (ja) 2013-01-30
US7271417B2 (en) 2007-09-18

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