201013891 六、發明說明： 【發明所屬之技術領域】 本發明係關於發光裝置及用於分類輻射半導體晶片之 方法。 【先前技術】 愈來愈多液晶螢幕使用發光二極體產生背光。發光二 極體於此應用廣泛，尤如具有發藍光的半導體本體與將部 分藍光轉換成黃光的轉換元件者，其可藉藍黃光之混合產 φ 生白光。然後過濾背光，以生成主要爲紅、綠、藍之映像 點基本色光。於此，紅與綠的光色品質常因從黃光間接取 得而較差。 【發明内容】 因此，應解決的問題在於提供具改善光色重現品質的 一種發光裝置。此問題可藉具申請專利範圍第1項所述特 徵之發光裝置解決。 另一問題在於提供有效率的用於分類輻射半導體晶片 • 方法。此問題可藉具申請專利範圍第6項所述特徵之方法 解決。 本發明亦提供此發光裝置與用於分類輻射半導體晶片 方法之較佳樣態，分別如申請專利範圍各附屬項所述。 根據本發明之一較佳實施樣態，此發光裝置具有複數 個輻射半導體晶片。各半導體晶片尤其具有一半導體本體 與一轉換元件。此些半導體本體可產生具第一波長之輻 射。各轉換元件可將一部分原始輻射轉換成具第二波長與 201013891 第三波長之輻射，使半導體晶片產生的輻射總頻譜中實質 產生三個強度高峰。 較佳者可使第一、第二與第三波長落在可見光譜範圍 中。 根據本發明之一較佳樣態，轉換元件可含兩種不同類 別的螢光物質。尤其可以第一類別螢光物質將第—波長輻 射轉換成第二波長輻射，並以第二類別螢光物質將第一波 長輻射轉換成第三波長輻射。 Ο 較佳者可使第一與第二類別螢光物質具有由下列材料 組成之物質：摻雜稀土族金屬的石榴子石氧化物、摻雜稀 土族金屬的鹼土金屬硫化物、摻雜稀土族金屬之鎵硫化 物、摻雜稀土族金屬之鋁化物、摻雜稀土族金屬之正矽酸 鹽、摻雜稀土族金屬之氯矽酸鹽、摻雜稀土族金屬之鹼土 金屬氮化物、摻雜稀土族金屬之氮氧化物以及摻雜稀土族 金屬之鋁氮氧化物。 較佳者可使各半導體本體含有一氮化物混合物。亦即 β 半導體本體之活性磊晶層疊或至少.其中一層包含一氮化物 -三五族化合物半導體材料，尤以AlnGainIni.n.mN爲佳，其 中OSnSl，且n + m£1。於此，此材料無須限於上述 化學式之精確數値的組成成分。其亦可含一種或多種不明 顯影響AKGamlnmN材料特徵物理性質之其他摻雜物質及 添加成分。然而爲簡單表述，上述化學式僅含晶格中的主 要成分（銘 '鎵、銦、氮），事實上這些元素亦可以其他少 量物質取代。 -4- 201013891 根據本發明之一較佳實施樣態中，半導體本體可發射 藍光，其中第一波長可爲包含43 5奈米與450奈米間的數 値。 再者，轉換元件可含綠色螢光物質，使部分藍光得轉 換成綠光。對應的第二波長尤可爲包含500奈米與570奈 米間的數値。 較佳者，轉換元件可更包含紅色之螢光物質，使另一 部分藍光轉換成紅光。對應的第三波長尤可爲包含600奈 0 米與690奈米間的數値。 較佳者，可適當調配不同輻射比例，使個別半導體晶 片得發射白光》 因爲此白光係以藍、綠、紅基本色光組成，由此白光 取得之基本色光將具有較佳的光色重現性。 從螢光機制的物理關聯性可知，產生具第二波長輻射 的螢光物質若具較小數値之第一波長，即尤爲435iim附近 的範圍，其受激發效率將較高。第一波長若爲較大數値， ® 則第二波長輻射的強度將減弱。因此，較小數値的第一波 長可使轉換元件產生的輻射稍微偏綠，較大數値的第一波 長則使之稍微偏紅》 由此可見，若上述機制成立，混成光的色座標値域範 圍値域範圍有其限制。相較於僅由如藍光之第一波長輻射 與如黃光之第二波長輻射組成的混成光，可將色座標値域 範圍尤其在第一方向上較佳地加以限制。 201013891 本發明之基本發明槪念主要在於利用限制色座標値域 範圍的技術。 將半導體晶片區分類組（所謂“ Binning “）的傳統技術 中，須有不受限的値域範圍，且係將値域範圍依固設之組 群（所謂“ bins “）劃分。然而當値域範圍受限時，某些組群 將成多餘。 本發明中可較佳地給定新的組群劃分。組群的數目可 保留傳統分類技術慣例。藉由新的組群劃分，可改善發光 # 裝置之光色品質與輻射均勻性* 於本發明之一較佳實施樣態中，除了以色座標作組群 劃分之外，更依第一波長將半導體晶片區分類組。例如’ 可將包含435奈米至450奈米之第一波長的値域範圍分成 三區域。較佳者可使第一區域包含435奈米至4 40奈米’ 第二區域包含441奈米至4 45奈米，且第三區域包含446 奈米至450奈米。 新的組群劃分可較佳地降低同一組群中第一波長的變 β 動。尤其可使同一組群內半導體晶片之第一波長的數値彼 此間差異不超過10奈米，較佳者不超過6奈米。傳統組群 劃分技術中，並未根據第一波長劃分組群。因此，在上述 數値例中，第一波長的間的差異可達15奈米。 根據本發明之發光裝置中，可較佳地僅使用同一組群 之半導體晶片，使第一波長之變動不超過10奈米，較佳者 不超過6奈米。此種發光裝置中，不僅其紅綠光具有較佳 201013891 的色光品質，較低的第一波長變動亦使藍 光品質。 根據本發明之一較佳變化樣態中，爲 可將輻射半導體晶片依本發明之方法加以 定每一半導體晶片之第一波長與色座標。 晶片之不同組群，其中同一組群的半導體 色座標，且其第一波長彼此間差異不超過 不超過6奈米。 除色座標與第一波長外，可更依據其 群劃分，例如更依據光電流且/或順向電壓 群的半導體晶片具有統一的光電流與/或統 本發明發光裝置製作方法之一較佳樣 片的第一波長變動不超過10奈米，較佳者 此方法中先依上述方法劃分輻射半導體晶 同組群中之一組群內的半導體晶片設.置於 可隨機進行。 本發明發光裝置製作方法之再一較佳 依上述方法劃分輻射半導體晶片。然而係 導體晶片設置於載體，其中來自不同組群 均勻地分佈於載體上。因此雖然此處第一 樣態大，由於不同組群的半導體晶片係均 上，可在發光裝置面積尺度上達致一補償 上相對良好之輻射均勻度。 光具有較佳的色 形成上述結構， 分類，其係先判 然後形成半導體 晶片具有統一的 1 0奈米，較佳者 他特徵量進行組 劃分，使同一組 一的順向電壓。 態中，半導體晶 不超過6奈米， 片。然後僅以不 載體。其設置係 樣態中，同樣先 以不同組群的半 的半導體晶片係 波長變動比前述 勻地設置在載體 作用，以得整體 .201013891 【實施方式】 以下參照圖式之第1至3圖進一步揭露本發明之技術 內容。 第1圖例示白混成光之整體光譜，係一輻射半導體晶 片發射所得。此半導體晶片具有可產生尤爲藍光之第一波 長輻射的半導體本體以及轉換元件，其可將一部分原始輻 射轉換成尤爲綠光的第二波長輻射與尤爲紅光的第三波長 輻射。 Ο 如圖所示，總光譜W於波長λ約435奈米處具有第一 強度高峰。曲線Β顯示藍光的光譜分佈，其於相同位置具 有一極大値。因此混成光含有具第一波長λ約435奈米的 藍光。總光譜與藍光光譜分佈係由半導體晶片的測量所得° 然而曲線L顯示轉換元件產生的輻射光譜分佈，係得 自總光譜W與藍光光譜分佈之差異。 總光譜W與曲線L於波長約530奈米處具有一強度高 峰。另一強度高峰出現於波長約650奈米處。約530奈米 ® 處的強度高峰係藉轉換元件所含的綠色螢光物質產生，約 650奈米處的強度高峰係藉轉換元件所含的紅色螢光物質 產生。 與此相較，第2圖顯示另一總光譜W，係產生自一半 導體晶片，其中半導體本體可發射45 0奈米附近範圍之第 一波長。如圖所示，較大波長導致綠光強度相對於紅光較 弱。原因在於綠色螢光物質的吸收光譜，其尤在波長約43 5 201013891 奈米處具有一極大吸收率。因此在波長約450奈米處吸收 率較低。故綠色螢光物質產生的輻射強度較低。 因此，當藍光波長較短時，轉換元件產生混合綠光與 紅光的黃光將有輕微綠偏移，當藍光波長較長時，則爲輕 微紅偏移。 上述事實與其結果可以第3圖說明。 連接線I、II、III、IV與V將相屬數値彼此連接。藍 光頻譜範圍B的數値分別與黃光頻譜範圍Y的數値相連》 © 黃光係由綠光與紅光混成，其分別經由藍光之對應的轉換 而得。 由圖可見，較短波長藍光可產生較短波長黃光，而較 長波長藍光可產生較長波長黃光。 各種藍光與黃光生成的白混成光具有不同色座標。其 色座標落於劃虛線的數値區域A內，即以第一方向a與第 二方向b爲向量分析基底之一平面。 此混成光之色座標數値區域A呈現未受侷限之一値域 β 範圍，其在方向a的邊界在連接線VI與VII上。連接線VI 與VII屬於其藍光經發黃色螢光物質轉換之半導體晶片。 此處，對於短波長與長波長的藍激發光，所得黃光的波長 大致相同。 當半導體晶片中使用綠色與紅色螢光物質時，所得受 限之色座標數値區域在第一方向a上則以連接線I與V爲 界。相較於未受限値域範圍，此受限色座標數値區域尤在 第一方向a上的寬度變得較小。 .201013891 由於色座標數値區域在第一方向a受限，無需在如第 一 方向a之方向上劃分數値區域。取而代之，可較佳地劃 分藍光的數値區域。如此可減少同一組群中藍光波長的變 動。相反地，傳統技術中在第一方向a劃分不受限的色座 標數値區域A，且未劃分藍光的數値區域。 第4圖爲此處所述發光裝置之一實施例的截面示意 圖。此發光裝置設有載體4。此例中載體4可爲電性連通 載體，其上或其中設有電性通路與電性接點，以接連裝設 © 於載體4的元件。 載體4的上側面設有複數個輻射半導體晶片1。每一 半導體晶片1包含一半導體本體2,其可含如氮化物混合 材料。半導體本體2包含一電洞型摻雜層21，係朝向載體 4。半導體本體2更包含可生成輻射之一活性層22。活性層 22可較佳地用以產生如第一波長涵蓋435奈米與450奈米 之間的的藍光。半導體本體2更包含一電子型摻雜層23, 其設於活性層22背向電洞型摻雜層21之一面。 ® 第4圖之實施例中，轉換元件3設於半導體本體2上 背向載體4之上側面。第4圖之實施例中，轉換元件3間 接接觸半導體本體2。可選擇性地使轉換元件3與半導體 本體2有一間距，如設於一封包層中。 轉換元件3的作用在於，將一部分在洁性區22產生的 第一波長電磁輻射轉換成第二與第三波長輻射。 此發光裝置中，不同半導體晶片之第一波長數値彼此 差異不超過10奈米，較佳者不超過6奈米。更較佳者，其 -10- 201013891 不同半導體晶片第一波長強度高峰位置彼此差異不超過ίο 奈米，較佳者不超過6奈米。 可選擇性地變化第4圖中的實施例，其中發光裝置的 所有半導體晶片僅配屬單一個轉換元件，也就是說，每一 半導體本體分別配屬之轉換元件係發光裝置中該單一轉換 元件。 轉換元件3包含第一類別螢光物質31與第二類別螢光 物質32。第一類別與第二類別螢光物質可設於一母體材料 ❹ 中。母體材料係指例如矽膠、環氧化物、玻璃、玻璃陶瓷 或類似物質。第4圖實施例中，係將螢光物質混合物設置 於半導體本體2上。亦可選擇另一作法，以平行於半導體 本體2背向載體4之表面上的膜層作爲轉換元件，每一膜 層可含有單一類別的螢光物質。亦即此處轉換元件3由含 有第一類螢光物質別之膜層以及含有與第二類別螢光物質 之膜層組成。另一可能作法是利用陶瓷螢光物質的薄片分 別形成上述膜層。 ® 例如，第一類別螢光物質31適用於將第一波長輻射轉 換成如綠光的第二波長輻射。第二類別螢光物質32則適用 於將第一波長輻射轉換成如紅光的第三波長輻射。 本發明的範圍不限於上述具體實施例的描述內容，尤 應包括含有申請專利範圍所述特徵之任何組合，即使此些 特徵或其組合並未直接表述於申請專利範圍或實施例中。 本專利申請案請求案號爲102008033391.3之德國專利申請 案優先權，並以將其技術揭露內容收錄於附件中。 -11- 201013891 【圖式簡單說明】 第1與第2圖爲使用不同藍光波長時，白混成光整體 光譜之示意圖； 第3圖爲CIE色度座標i之示意圖，顯示使用不同藍 光波長與兩種不同類型半導體晶片所得白混成光色座標； 及 第4圖爲此處所述發光裝置之一實施例的截面示意 圖。 參 【主要元件符號說明】 1 半導體晶片 2 半導體本體 21 電洞型摻雜層 22 活性層 23 電子型摻雜層 3 轉換元件 3 1 第一類別螢光物質 32 第二類別螢光物質 4 載體 A 色座標數値區域 B 藍光頻譜 I 強度 L 差異頻譜W總光譜 Y 黃光頻譜 a 第一方向 b 第二方向 -12- 201013891201013891 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a light-emitting device and a method for classifying a radiation semiconductor wafer. [Prior Art] More and more liquid crystal screens use a light-emitting diode to produce a backlight. Light-emitting diodes are widely used in this field, such as a semiconductor body that emits blue light and a conversion element that converts part of blue light into yellow light, which can produce white light by a mixture of blue and yellow light. The backlight is then filtered to generate a primary color that is primarily red, green, and blue. Here, the color quality of red and green is often poorly obtained by indirect access from yellow light. SUMMARY OF THE INVENTION Therefore, a problem to be solved is to provide a light-emitting device with improved light color reproduction quality. This problem can be solved by the illuminating device of the feature described in claim 1 of the patent application. Another problem is to provide efficient methods for classifying radiating semiconductor wafers. This problem can be solved by the method of applying the features described in item 6 of the patent scope. The present invention also provides a preferred embodiment of the illumination device and method for classifying a radiation semiconductor wafer, as described in the respective dependent claims. According to a preferred embodiment of the invention, the illumination device has a plurality of radiation semiconductor wafers. Each semiconductor wafer has in particular a semiconductor body and a conversion element. Such semiconductor bodies can produce radiation having a first wavelength. Each conversion element converts a portion of the original radiation into radiation having a second wavelength and a third wavelength of 201013891, resulting in substantially three intensity peaks in the total spectrum of radiation produced by the semiconductor wafer. Preferably, the first, second and third wavelengths are allowed to fall within the visible spectrum. According to a preferred aspect of the invention, the conversion element can comprise two different types of phosphors. In particular, the first type of phosphor can convert the first wavelength radiation to the second wavelength radiation and the second type of phosphor to convert the first wavelength radiation to the third wavelength radiation. Preferably, the first and second types of phosphors have materials consisting of garnet oxide doped with rare earth metals, alkaline earth metal sulfide doped with rare earth metals, doped rare earths Metal gallium sulfide, aluminide doped with rare earth metal, orthosilicate doped with rare earth metal, chlorate doped with rare earth metal, alkaline earth metal nitride doped with rare earth metal, doped Nitrogen oxides of rare earth metals and aluminum oxynitrides doped with rare earth metals. Preferably, each semiconductor body contains a nitride mixture. That is, the active epitaxial stack of the β semiconductor body or at least one of the layers comprises a nitride-tri-family compound semiconductor material, especially AlnGainIni.n.mN, wherein OSnSl, and n + m£1. Here, the material is not necessarily limited to the composition of the precise number of the above chemical formula. It may also contain one or more other dopants and additives which do not significantly affect the physical properties of the AKGamlnmN material. However, for the sake of simplicity, the above chemical formula contains only the main components in the crystal lattice (Ming, gallium, indium, nitrogen), and in fact these elements can be replaced by other small substances. -4-201013891 In accordance with a preferred embodiment of the present invention, the semiconductor body emits blue light, wherein the first wavelength can be a number between 43 5 nm and 450 nm. Furthermore, the conversion element may contain a green fluorescent substance to convert part of the blue light into green light. The corresponding second wavelength may in particular be a number between 500 nm and 570 nm. Preferably, the conversion element may further comprise a red phosphor to convert another portion of the blue light into red light. The corresponding third wavelength may especially be a number between 600 nm and 690 nm. Preferably, different radiation ratios can be appropriately configured to cause individual semiconductor wafers to emit white light. Because the white light is composed of blue, green, and red basic color lights, the basic color light obtained by white light will have better light color reproducibility. . From the physical correlation of the fluorescence mechanism, it is known that if the phosphor having the second wavelength radiation has a first wavelength of a small number, that is, a range near 435iim, the excitation efficiency will be high. If the first wavelength is a larger number, the intensity of the second wavelength radiation will decrease. Therefore, the first wavelength of a smaller number of turns can cause the radiation generated by the conversion element to be slightly greenish, and the first wavelength of a larger number of turns makes it slightly redder. Thus, if the above mechanism is established, the color coordinates of the mixed light are established. The scope of the domain has its limits. The color coordinate range can be preferably limited, particularly in the first direction, as compared to a mixed light consisting only of a first wavelength radiation such as blue light and a second wavelength radiation such as yellow light. 201013891 The basic inventive concept of the present invention is mainly to utilize techniques for limiting the range of color coordinates. In the conventional technique of classifying semiconductor wafer regions (so-called "binning"), there is an unrestricted range of the domain, and the range of the domain is divided by the fixed group (so-called "bins"). However, when the scope is limited, some groups will become redundant. A new group division can be preferably given in the present invention. The number of groups can retain traditional classification techniques. By the new group division, the light color quality and the radiation uniformity of the illuminating device can be improved. * In a preferred embodiment of the present invention, in addition to the color coordinate group group division, the first wavelength is further The semiconductor wafer regions are grouped into groups. For example, the range of the first wavelength including 435 nm to 450 nm can be divided into three regions. Preferably, the first zone comprises from 435 nm to 4 40 nm. The second zone comprises from 441 nm to 4 45 nm and the third zone comprises from 446 nm to 450 nm. The new grouping can preferably reduce the variation of the first wavelength in the same group. In particular, the number of first wavelengths of the semiconductor wafers in the same group can be no more than 10 nm, preferably no more than 6 nm. In the traditional group division technique, groups are not divided according to the first wavelength. Therefore, in the above examples, the difference between the first wavelengths can be as high as 15 nm. In the light-emitting device according to the present invention, it is preferable to use only the same group of semiconductor wafers so that the variation of the first wavelength does not exceed 10 nm, preferably does not exceed 6 nm. In such a light-emitting device, not only the red-green light has a good color quality of 201013891, but the lower first wavelength variation also makes the blue light quality. According to a preferred variant of the invention, the first wavelength and color coordinates of each semiconductor wafer can be determined for the radiation semiconductor wafer in accordance with the method of the invention. Different groups of wafers, in which the same group of semiconductor color coordinates, and their first wavelengths differ from each other by no more than 6 nm. The color-removing coordinates and the first wavelength may be further divided according to the group. For example, the semiconductor wafer according to the photocurrent and/or the forward voltage group has a uniform photocurrent and/or one of the methods for fabricating the light-emitting device of the present invention is better. The first wavelength of the sample varies by no more than 10 nm. Preferably, in the method, the semiconductor wafer in a group of the radiation semiconductor crystal group is first divided according to the above method. Still another preferred method of fabricating the illuminating device of the present invention divides the radiating semiconductor wafer by the above method. However, the conductor wafers are disposed on the carrier, wherein the different groups are uniformly distributed on the carrier. Therefore, although the first mode is large here, since the semiconductor wafers of different groups are uniformly, a relatively good radiation uniformity can be achieved on the area scale of the light-emitting device. The light has a better color to form the above structure, and the classification is preceded by the formation of a semiconductor wafer having a uniform wavelength of 10 nm. Preferably, the characteristic amount is grouped to make the forward voltage of the same group. In the state, the semiconductor crystal does not exceed 6 nm, and the film. Then only the carrier is not available. In the arrangement state, the wavelength of the semiconductor wafer system of the different groups is also set to be uniformly distributed on the carrier to obtain the whole. 201013891. [Embodiment] Referring to Figures 1 to 3 of the following drawings, further The technical content of the present invention is disclosed. Fig. 1 illustrates an overall spectrum of white mixed light obtained by emitting a radiation semiconductor wafer. The semiconductor wafer has a semiconductor body that produces a first wavelength of radiation, particularly blue light, and a conversion element that converts a portion of the original radiation into a second wavelength radiation that is particularly green and a third wavelength radiation that is particularly red. Ο As shown, the total spectrum W has a first intensity peak at a wavelength λ of approximately 435 nm. The curve Β shows the spectral distribution of the blue light, which has a maximum 相同 at the same position. Therefore, the mixed light contains blue light having a first wavelength λ of about 435 nm. The total spectrum and the blue spectrum distribution are measured from the semiconductor wafer. However, the curve L shows the spectral distribution of the radiation produced by the conversion element, which is the difference between the total spectrum W and the blue spectrum. The total spectrum W and the curve L have a high intensity peak at a wavelength of about 530 nm. Another intensity peak occurs at a wavelength of about 650 nm. The intensity peak at about 530 nm ® is generated by the green fluorescent material contained in the conversion element, and the intensity peak at about 650 nm is generated by the red fluorescent substance contained in the conversion element. In contrast, Figure 2 shows another total spectrum W, which is generated from a half conductor wafer in which the semiconductor body emits a first wavelength in the vicinity of 45 nm. As shown, the larger wavelength causes the green light intensity to be weaker than the red light. The reason is the absorption spectrum of the green fluorescent substance, which has a maximum absorption rate especially at a wavelength of about 43 5 201013891 nm. Therefore, the absorption rate is low at a wavelength of about 450 nm. Therefore, the green fluorescent material produces a lower radiation intensity. Therefore, when the blue light wavelength is short, the conversion element produces a mixed green and red light with a slight green shift, and when the blue light wavelength is long, it is a light red shift. The above facts and their results can be illustrated in Figure 3. The connecting lines I, II, III, IV and V connect the respective numbers 値 to each other. The number 値 of the blue spectral range B is respectively connected to the number 黄 of the yellow spectral range Y. © The yellow light is composed of green light and red light, which are respectively converted by corresponding blue light. As can be seen, the shorter wavelength blue light produces a shorter wavelength yellow light, while the longer wavelength blue light produces a longer wavelength yellow light. The white mixed light generated by various blue and yellow light has different color coordinates. The color coordinates fall within the numbered area A of the dashed line, that is, one plane of the base is analyzed with the first direction a and the second direction b as vectors. The color coordinates of the mixed light 値 region A exhibits an unrestricted one of the β domain β ranges, which are at the boundary of the direction a on the connecting lines VI and VII. The connecting wires VI and VII belong to a semiconductor wafer whose blue light is converted by a yellow fluorescent substance. Here, for the blue excitation light of the short wavelength and the long wavelength, the wavelength of the obtained yellow light is substantially the same. When green and red phosphors are used in the semiconductor wafer, the resulting limited color coordinate 値 region is bounded by the connecting lines I and V in the first direction a. This limited color coordinate number 値 area becomes smaller in the first direction a than the unrestricted area. .201013891 Since the color coordinate number 値 area is limited in the first direction a, it is not necessary to divide the number of areas in the direction of the first direction a. Instead, the digital chirp region of the blue light can be preferably divided. This reduces the variation of the blue wavelength in the same group. Conversely, in the conventional art, the unrestricted color coordinate number 値 region A is divided in the first direction a, and the digital 値 region of the blue light is not divided. Fig. 4 is a schematic cross-sectional view showing an embodiment of the light-emitting device described herein. This illuminating device is provided with a carrier 4. In this example, the carrier 4 may be an electrically connected carrier having electrical and electrical contacts thereon or in a manner to connect the components of the carrier 4 in succession. A plurality of radiating semiconductor wafers 1 are provided on the upper side of the carrier 4. Each of the semiconductor wafers 1 comprises a semiconductor body 2 which may contain a material such as a nitride. The semiconductor body 2 comprises a cavity doped layer 21 facing the carrier 4. The semiconductor body 2 further comprises an active layer 22 which generates radiation. The active layer 22 can preferably be used to produce blue light as the first wavelength encompasses between 435 nm and 450 nm. The semiconductor body 2 further includes an electronic doping layer 23 disposed on a side of the active layer 22 facing away from the hole doping layer 21. In the embodiment of Fig. 4, the conversion element 3 is arranged on the semiconductor body 2 facing away from the upper side of the carrier 4. In the embodiment of Fig. 4, the conversion element 3 is in in contact with the semiconductor body 2. The conversion element 3 can be selectively spaced from the semiconductor body 2, such as in a cladding. The function of the conversion element 3 is to convert a portion of the first wavelength electromagnetic radiation generated in the clean region 22 into second and third wavelength radiation. In the illuminating device, the first wavelengths of the different semiconductor wafers are different from each other by no more than 10 nm, preferably not more than 6 nm. More preferably, its -10- 201013891 different semiconductor wafers have a first wavelength intensity peak position that differs from each other by no more than ίο nanometers, preferably no more than 6 nanometers. The embodiment of FIG. 4 can be selectively changed, wherein all semiconductor wafers of the illumination device are only assigned to a single conversion element, that is to say, the conversion elements respectively assigned to each semiconductor body are the single conversion elements in the illumination device. . The conversion element 3 comprises a first type of phosphor material 31 and a second type of phosphor material 32. The first category and the second category of phosphors may be disposed in a parent material ❹. By parent material is meant, for example, silicone, epoxide, glass, glass ceramic or the like. In the embodiment of Fig. 4, the phosphor material mixture is disposed on the semiconductor body 2. Alternatively, a film layer parallel to the surface of the semiconductor body 2 facing away from the carrier 4 may be selected as the conversion element, and each film layer may contain a single type of phosphor. That is, the conversion element 3 here is composed of a film layer containing the first type of phosphor and a film layer containing the phosphor of the second type. Another possibility is to form the above film layer by using a sheet of ceramic fluorescent material. ® For example, the first class of phosphors 31 is adapted to convert a first wavelength of radiation into a second wavelength of radiation, such as green light. The second class of phosphors 32 is then adapted to convert the first wavelength radiation into a third wavelength radiation such as red light. The scope of the present invention is not limited to the description of the specific embodiments described above, and particularly includes any combination of the features described in the claims, even if such features or combinations thereof are not directly described in the scope of the claims. The priority of the German Patent Application No. 102008033391.3 is hereby incorporated by reference. -11- 201013891 [Simple description of the diagram] The first and second figures are schematic diagrams of the overall spectrum of white mixed light when using different blue wavelengths; Figure 3 is a schematic diagram of the CIE chromaticity coordinates i, showing the use of different blue wavelengths and two A white mixed light color coordinate obtained by a different type of semiconductor wafer; and Fig. 4 is a schematic cross-sectional view showing an embodiment of the light emitting device described herein. Reference [Major component symbol description] 1 Semiconductor wafer 2 Semiconductor body 21 Hole-type doped layer 22 Active layer 23 Electron-doped layer 3 Conversion element 3 1 First-class phosphor material 32 Second-class phosphor material 4 Carrier A Color coordinate number 値 region B blue light spectrum I intensity L difference spectrum W total spectrum Y yellow light spectrum a first direction b second direction -12- 201013891
I 、 II 、 III λ IV'V 連接線 波長I, II, III λ IV'V cable wavelength
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