JP5119806B2 - Silicon carbide semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a silicon carbide vertical field effect transistor which is a silicon carbide semiconductor device, and more particularly to a high power silicon carbide vertical field effect transistor with reduced on-resistance and a method for manufacturing the same. It is.

  In a silicon carbide vertical metal-oxide film-semiconductor field effect transistor (MOSFET) which is a kind of silicon carbide semiconductor device, the on-resistance can be reduced for high-power high-speed switching applications. It is valid. In order to reduce the channel resistance that occupies the largest proportion of the on-resistance, the width of the channel region, that is, the channel length is shortened, and the mobility of carriers passing through the channel region, that is, the channel mobility is increased. It is desirable.

In order to shorten the channel length, a method of forming a channel region in a self-aligned manner is effective. The method for forming a self-aligned channel region does not have dimensional accuracy limitations due to a plurality of photolithography processes, and thus the channel length can be shortened with high accuracy. For example, by using the same implantation mask, an n-type impurity having a small diffusion coefficient and a p-type impurity having a large diffusion coefficient are ion-implanted into an n-type silicon carbide drift layer, and the p-type impurity is diffused by annealing, thereby causing n There has been a self-aligned channel region forming method in which a p-type region in a silicon carbide drift layer is used as a channel region (see, for example, Patent Document 1).
In addition, if the channel length is shortened, characteristic degradation such as a drop in threshold voltage called the short channel effect and punch-through breakdown of the channel region may occur. Therefore, in order to prevent the characteristic degradation due to the short channel effect, It was necessary to increase the impurity concentration of this to some extent.

JP-T-2002-518828 (pages 23-24, FIG. 1)

However, in the conventional silicon carbide semiconductor device as disclosed in Patent Document 1, when the concentration of the p-type impurity to be diffused is increased, there is a problem that the mobility of electrons as carriers is reduced due to Coulomb scattering. On the other hand, if the concentration of the p-type impurity to be diffused is reduced, the mobility of electrons as carriers can be increased, but the channel length is shortened only to some extent in order to prevent the deterioration of characteristics due to the short channel effect. I couldn't.
Thus, in the conventional silicon carbide semiconductor device, it is difficult to achieve both short channel length and carrier mobility in a high channel region.

  The present invention has been made in order to solve the above-described problems, and provides a silicon carbide semiconductor device having a high channel carrier mobility and a short channel length without causing deterioration of characteristics due to the short channel effect. The purpose is to obtain.

A silicon carbide semiconductor device according to the present invention includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer provided on a main surface of the silicon carbide substrate, and a surface layer of the silicon carbide drift layer. A pair of source regions of a first conductivity type provided at a predetermined distance apart from each other, and a spacing direction outside the source region by a first width toward the spacing direction of the pair of source regions , deeper than the source region, provided, of the pair of second conductivity type containing a second impurity of the second diffusion coefficient of the first impurity and said first impurity than silicon carbide conductivity type is larger second conductivity type second The second impurity is provided by diffusing from the first base region to the outside by a second width in the interval direction between the first base region and the pair of first base regions , and is provided in the first base region. Concentration of impurities of the second conductivity type contained It is obtained by a second base region of the pair of second conductivity type containing a lower concentration second conductivity-type impurity.

  A method for manufacturing a silicon carbide semiconductor device according to the present invention includes a step of forming a first conductivity type silicon carbide drift layer on a main surface of a first conductivity type silicon carbide substrate, and a surface of the silicon carbide drift layer. Forming a first implantation mask of a predetermined width on the side, and ion-implanting a first impurity of a second conductivity type into the silicon carbide drift layer having the first implantation mask formed on the surface thereof, thereby forming a first base region A step of ion-implanting a second conductivity type second impurity having a diffusion coefficient in silicon carbide larger than that of the first impurity into the silicon carbide drift layer in which the first implantation mask is formed; Forming a second implantation mask by widening the implantation mask by a first width in a self-aligned manner; and adding a third impurity of the first conductivity type to the silicon carbide drift layer having the second implantation mask formed on a surface thereof. Ion implantation Forming a source region in the base region, in which a step of forming a second base region of the second width to diffuse the second impurities.

  According to the present invention, a silicon carbide semiconductor device having a short channel length and high carrier mobility can be obtained without causing characteristic deterioration due to the short channel effect.

Embodiment 1 FIG.
FIG. 1 is a schematic cross-sectional view of a vertical MOSFET that is a silicon carbide semiconductor device in the first embodiment for carrying out the present invention. In the present embodiment, the first conductivity type is n-type and the second conductivity type is p-type.

  In FIG. 1, the surface orientation of the first main surface is the (0001) plane, and the n-type low resistance silicon carbide substrate 10 having the 4H polytype and having the n-type is formed on the first main surface. A silicon carbide drift layer 20 is formed. The p-type first containing aluminum (Al) as the first impurity and boron (B) as the second impurity as p-type impurities in a portion separated by a certain width on the surface side of the silicon carbide drift layer 20. A base region 30 is formed. A p-type second base region 31 containing B as a p-type impurity is formed in silicon carbide drift layer 20 so as to surround first base region 30. Here, the p-type impurity concentration of the first base region 30, that is, the sum of the Al impurity concentration and the B impurity concentration is set higher than the p-type impurity concentration of the second base region 31, that is, the B impurity concentration. ing. Further, an n-type source region 40 containing nitrogen (N) as a third impurity as an n-type impurity is formed in the surface layer portion inside each cross-sectional direction of the first base region 30. It is formed shallower.

  Further, on the surface side of the silicon carbide drift layer 20 including the first base region 30, the second base region 31, and the source region 40, a gate made of silicon oxide except for part of the surface side of the source region 40. An insulating film 50 is formed. Further, a gate electrode 60 is formed on the gate insulating film 50 at a position facing a portion including a region between the pair of source regions 40. Further, source electrode 70 is formed on the surface of source region 40 where gate insulating film 50 is not formed, and on the second main surface opposite to the first main surface of silicon carbide substrate 10, that is, on the back surface side. Each has a drain electrode 80 formed thereon.

  Here, in FIG. 1, a region of the first base region 30 and the second base region 31 that is opposed to the gate electrode 60 through the gate insulating film 50 and in which an inversion layer is formed during the ON operation is referred to as a channel region. Further, the distance between which the channel region is sandwiched between the region where the ion implantation is not performed in the surface layer portion of the silicon carbide drift layer 20 and the source region 40 is referred to as a channel length. In the vertical MOSFET shown in FIG. 1, the channel length of the first channel region, which is the channel region included in the first base region 30, is set to the first width, and the channel region included in the second base region 31. The channel length of a certain second channel region corresponds to the second width, and the total channel length is the sum of the first width and the second width.

  Next, the operation of the vertical MOSFET which is the silicon carbide semiconductor device in the present embodiment will be briefly described. When a positive voltage higher than the threshold voltage is applied to the gate electrode 60 of the vertical MOSFET shown in FIG. 1, an inversion channel is formed in the channel region, and the n-type source region 40 and the n-type silicon carbide drift layer 20 A path through which electrons as carriers flow is formed. Electrons flowing from source region 40 into silicon carbide drift layer 20 reach drain electrode 80 via silicon carbide drift layer 20 and silicon carbide substrate 10 in accordance with an electric field formed by a positive voltage applied to drain electrode 80. Therefore, a current flows from the drain electrode 80 to the source electrode 70 by applying a positive voltage to the gate electrode 60. This state is called an on state. Although the on-resistance of the vertical MOSFET can be reduced by reducing the resistance of the channel region in the on state, the resistance of the channel region can be lowered as the channel length is shorter and the mobility of electrons in the channel region is higher.

On the other hand, when a voltage equal to or lower than the threshold voltage is applied to the gate electrode 60, an inversion channel is not formed in the channel region, so that no current flows from the drain electrode 80 to the source electrode 70. This state is called an off state. At this time, the depletion layer extends from the pn junction between the silicon carbide drift layer 20 and the second base region 31 due to the positive voltage applied to the drain electrode 80. When the depletion layer extending from the pn junction toward the second base region 31 reaches the source region 40, punch-through breakdown occurs. However, in the present embodiment, since the impurity concentration of the first base region 30 is set to a high value of 1 × 10 ¹⁷ cm ⁻³ or more so that punch-through breakdown does not occur, punch-through breakdown does not occur. However, the impurity concentration of the first base region 30 is set to 1 × 10 ¹⁹ cm ⁻³ or less so as not to cause a high quality deterioration of the silicon carbide crystal due to ion implantation.

  Next, a method for manufacturing a vertical MOSFET that is the silicon carbide semiconductor device of the first embodiment will be described in sequence with reference to FIGS. 2 to 11 are schematic cross-sectional views in each manufacturing process of the vertical MOSFET.

First, as illustrated in FIG. 2, an n-type layer having a size of 1 × 10 ¹⁵ cm ⁻³ to 1 × 10 ¹⁷ cm ⁻³ is formed on the surface of the silicon carbide substrate 10 by a chemical vapor deposition (CVD) method. Silicon carbide drift layer 20 having an impurity concentration of 5 to 50 μm is epitaxially grown.
Next, as shown in FIG. 3, a silicon carbide drift layer 20 in which first implantation mask 100 made of polycrystalline silicon is formed on the surface of silicon carbide drift layer 20 and first implantation mask 100 is formed on the surface. Then, Al, which is a p-type first impurity, is ion-implanted. At this time, the depth of Al ion implantation is about 0.5 to 3 μm which does not exceed the thickness of the silicon carbide drift layer 20. The impurity concentration of ion-implanted Al is higher than the n-type impurity concentration of silicon carbide drift layer 20 in the range of 1 × 10 ¹⁷ cm ⁻³ to 1 × 10 ¹⁹ cm ⁻³ . Here, the first base region 30 is a p-type region in the silicon carbide drift layer 20 in which Al is ion-implanted.

Next, as shown in FIG. 4, B, which is a p-type second impurity, is ion-implanted into the silicon carbide drift layer 20 having the first implantation mask 100 used for Al ion implantation formed on the surface thereof. Also here, B is implanted to a depth of about 0.5 to 3 μm that does not exceed the thickness of the silicon carbide drift layer 20 to the same extent as the ion implantation depth of Al as the first impurity. The impurity concentration of ion-implanted B is higher than the n-type impurity concentration of the silicon carbide drift layer 20 in the range of 1 × 10 ¹⁶ cm ⁻³ to 1 × 10 ¹⁸ cm ⁻³ .

Next, as shown in FIG. 5, the first implantation mask 100 made of polycrystalline silicon is thermally oxidized to form a second implantation mask 110 in which the first implantation mask 100 is widened. This thermal oxidation process is performed under the condition that the polycrystalline silicon of the first implantation mask 100 is thermally oxidized and the silicon carbide drift layer 20 is hardly thermally oxidized. At this time, the widening width L _ch1 shown in FIG. 5 is 0.01 μm or more necessary for suppressing characteristic deterioration due to the short channel effect, and 0.5 μm or less that does not decrease the channel mobility.

Subsequently, as shown in FIG. 6, N, which is an n-type third impurity, is ion-implanted into the surface of the silicon carbide drift layer 20 on which the second implantation mask 110 is formed. The N ion implantation depth is shallower than the thickness of the first base region 30. Further, the impurity concentration of the ion-implanted N exceeds the p-type impurity concentration of the first base region 30 in the range of 1 × 10 ¹⁸ cm ⁻³ to 1 × 10 ²¹ cm ⁻³ . Of the region into which N is implanted in silicon carbide drift layer 20, a region showing n-type serves as source region 40.

Next, as shown in FIG. 7, after removing the second implantation mask 110, annealing is performed by a heat treatment apparatus in an inert gas atmosphere such as argon (Ar) gas at 1300 to 1900 ° C. for 30 seconds to 1 hour. By this annealing, N, Al, and B ion-implanted are activated, and B having a large diffusion coefficient in the silicon carbide diffuses into the silicon carbide drift layer 20, and as shown in FIG. Two base regions 31 are formed. Since the diffusion coefficients of Al and N in silicon carbide are small, the diffusion of Al and N is negligible. The width L _ch2 of the second base region 31 in which B is diffused and becomes p-type is set to 2 μm or less, for example, 0.8 μm, so that the channel length is not increased and the resistance of the channel region is not increased excessively. The impurity concentration of B in the second base region 31 after diffusion is set to 5 × 10 ¹⁷ cm ⁻³ or less in order to prevent a decrease in electron mobility in the channel region due to Coulomb scattering.

  Subsequently, as shown in FIG. 9, the surface of silicon carbide drift layer 20 including source region 40, first base region 30, and second base region 31 is thermally oxidized to form gate insulating film 50 having a desired thickness. Form. Next, as shown in FIG. 10, a polycrystalline silicon film having conductivity is formed on the gate insulating film 50 by a low pressure CVD method, and the gate electrode 60 is formed by patterning the film. Thereafter, as shown in FIG. 11, the gate insulating film 50 is opened. Finally, source electrode 70 electrically connected to source region 40 is formed, and drain electrode 80 is formed on the back side of silicon carbide substrate 10 to complete the vertical MOSFET shown in FIG. Here, examples of a material for the source electrode 70 and the drain electrode 80 include an Al alloy.

  As described above, the vertical MOSFET that is the silicon carbide semiconductor device according to the first embodiment of the present invention includes the first high-concentration impurity formed in the first base region 30 in the channel region. And the second channel region containing the low-concentration impurity formed in the second base region 31, the first channel region is present, so that the occurrence of the short channel effect can be suppressed. Since there are two channel regions, carrier mobility can be increased. Therefore, according to the silicon carbide semiconductor device and the method for manufacturing the silicon carbide semiconductor device in the present embodiment, a vertical MOSFET having a high carrier mobility and a short channel length, that is, a vertical MOSFET having a low on-resistance is obtained. Can do. Furthermore, since the first base region 30 having a high-concentration p-type impurity is provided, the occurrence of punch-through breakdown can be suppressed, and a high breakdown voltage vertical MOSFET can be realized.

Heretofore, the impurity concentration distribution in the depth direction of Al in the first base region 30 formed by ion implantation has been described as being constant in the depth direction, but the impurity concentration distribution in the depth direction of Al is in the depth direction. It may not be constant. FIG. 12 is a relationship diagram between the impurity concentration and the distance from the surface of the silicon carbide drift layer, showing two examples of the impurity concentration distribution in the depth direction of Al in the first base region 30. In the first profile of FIG. 12, the Al impurity concentration in the first base region 30 is constant at about 2 × 10 ¹⁸ cm ⁻³ up to a depth of about 1 μm. On the other hand, in the second profile, the Al impurity concentration of the first base region 30 is as low as about 2 × 10 ¹⁷ cm ^{−3 in the} shallow region, while it is approximately 2 × 10 ¹⁸ cm ⁻³ in the deep region. This value shows an impurity concentration distribution that increases in the depth direction. By ion-implanting Al in the first base region 30 as in the second profile, a high impurity concentration that does not cause punch-through breakdown in a deep region, and a short channel effect in a shallow region is not generated in the channel region. The impurity concentration can be lowered to a level that does not cause a decrease in mobility. As described above, by adjusting the impurity concentration in the depth direction of Al in the first base region 30, it is possible to realize further lower ON resistance and higher breakdown voltage.

The impurity concentration of B in the second base region 31 can be adjusted by the impurity concentration of B to be implanted, the annealing temperature, and the annealing time. The relationship between the diffusion of B and the impurity concentration of the second base region 31 will be described in detail below.
FIG. 13 shows B in the direction parallel to the <0001> axis when 1 × 10 ¹⁶ cm ^{−3 is} implanted into the silicon carbide film and then annealed at 1600 ° C. for 30 seconds and 1900 ° C. for 30 seconds. FIG. 6 is a relational diagram between impurity concentration and diffusion distance showing a diffusion distribution of γ. As shown in FIG. 13, the diffusion amount of B increases when annealing after B implantation is performed at 1900 ° C. rather than annealing at 1600 ° C. Further, the B impurity concentration level of 2 × 10 ¹⁶ cm ⁻³ indicated by the dotted line in FIG. 13 is obtained when the n-type impurity concentration of the silicon carbide drift layer 20 is 2 × 10 ¹⁶ cm ⁻³ , for example. , B is for explaining that only the portion where the impurity concentration exceeds this level becomes p-type and becomes the second base region 31. In the example of FIG. 13, the width L _ch2 of the second base region 31 in the case of annealing at 1600 ° C. and 1900 ° C. is about 0.5 μm and about 0.8 μm, respectively.
Thus, by adjusting the amount of ion implantation of B and the annealing conditions after the implantation, a desired impurity concentration and channel length of the channel region can be obtained. Further, by setting L _ch2 to 2 μm or less, the resistance of the channel region can be reduced, and the on-resistance can be lowered.

  The depth profile of the p-type impurity shown in FIG. 12 and FIG. 13 is obtained by secondary ion mass spectrometry (SIMS) or charged particle activation analysis (CPAA). ).

  Further, in the present embodiment, as an example of the method of widening the first implantation mask 100 and forming the second implantation mask 110, an example of thermally oxidizing polycrystalline silicon has been shown. It is not limited to. For example, an inorganic film may be formed on the entire surface including the surface of the source region 40 on the first implantation mask 100 by the CVD method, and N ions may be implanted through the inorganic film. A method for widening the first implantation mask 100 by forming an inorganic film will be described with reference to FIGS.

As shown in FIG. 4, after ion implantation of B, which is a p-type impurity, into silicon carbide drift layer 20 through first implantation mask 100, first implantation mask 100 and silicon carbide drift layer are formed as shown in FIG. 14. An inorganic film 111 such as a silicon oxide film is formed on the surface 20 by a CVD method. Inorganic film 111 is formed with a uniform film thickness L _ch1 on the surface of first implantation mask 100 and silicon carbide drift layer 20. Here, a combination of the first implantation mask 100 and the inorganic film 111 formed around this becomes the second implantation mask. Subsequently, as shown in FIG. 15, N, which is an n-type impurity, is ion-implanted into the surface of the silicon carbide drift layer 20 on which the second implantation mask is formed. N ions are implanted through the inorganic film 111. Since the film thickness L _ch1 of the inorganic film 111 is as small as 0.01 μm or more and 0.5 μm or less, the N ions pass through the inorganic film 111 and enter the silicon carbide drift layer 20. Implanted, a source region 40 is formed.
As another method for widening the first implantation mask 100, the first implantation mask 100 may be formed of a resist material and the like, and may be expanded and widened by heat treatment.

  Further, in the vertical MOSFET of FIG. 1, a region in the silicon carbide drift layer 20 sandwiched between the lower ends of the pair of second base regions 31 is referred to as a JFET region. Impurities may be implanted. By implanting a relatively high concentration of n-type impurity into the JFET region, the resistance value of the current path formed from the channel region toward the silicon carbide substrate 10 in the silicon carbide drift layer 20 in the ON state is reduced. Therefore, the on-resistance of the entire vertical MOSFET can be reduced.

  Further, the n-type impurity concentration of silicon carbide drift layer 20 may not be made constant in the cross-sectional depth direction, but the surface side of silicon carbide drift layer 20 may be made high in concentration. In other words, the concentration of the n-type impurity in the region from the surface of silicon carbide drift layer 20 to a certain depth is increased during epitaxial growth. In this way, the impurity concentration of the JFET region becomes high, and the JFET resistance can be reduced without deteriorating the quality of the crystal as compared with increasing the concentration of the JFET region by ion implantation.

  The B ion implantation may be performed on the silicon carbide drift layer 20 on which the second implantation mask 110 is formed before and after the N ion implantation shown in FIG. In this case, since B diffuses from the source region 40, the channel length can be further shortened and the channel resistance can be reduced.

  Furthermore, in the present embodiment, an example in which N is used as an n-type impurity is shown, but the present invention is not limited to this, and other impurities such as phosphorus (P) may be used. Moreover, although the example of B with a large diffusion coefficient in silicon carbide and Al with a small diffusion coefficient were shown as p-type impurities, both are not limited to this, and other elements such as B, Al, beryllium (Be), etc. Any combination may be used as long as the diffusion coefficient selected from the p-type impurities is a combination of a large diffusion coefficient and a small diffusion coefficient.

  In the present embodiment, as shown in FIGS. 3 and 4, the example in which the ion implantation of Al and B is performed first is performed, but this order may be reversed. Good. In the above description, the silicon carbide semiconductor device is described as an example of an n-channel MOSFET. However, even if a p-channel MOSFET is used, an n-type impurity having a large diffusion coefficient and an n-type impurity having a small diffusion coefficient are used. The same effect can be obtained.

  In the present embodiment, the plane orientation of the first main surface of silicon carbide substrate 10 is an example of (0001) plane, but the plane orientation of the first main surface is (000-1) plane. , The (11-20) plane, or a plane with an off angle. Since the diffusion of impurities is different when the plane orientation of the first main surface is different, the annealing conditions for diffusion may be adjusted according to each plane orientation. In addition, although the polytype of silicon carbide substrate 10 is 4H, the polytype may be any polytype of 4H, 6H, and 3C.

Further, in the present embodiment, an example of an Al alloy is shown as the material that becomes the source electrode 70 and the drain electrode 80 in FIG. 1, but the material that becomes the source electrode 70 and the drain electrode 80 is nickel (Ni), Titanium (Ti), gold (Au), and these compounds may be sufficient. Further, in order to reduce the contact resistance between the source region 40 and the source electrode 70 and between the silicon carbide substrate 10 and the drain electrode 80, the source electrode 70 and the drain electrode 80 are formed at about 1000 ° C. Heat treatment may be performed.
The material for forming the gate electrode 60 may be n-type or p-type polycrystalline silicon, n-type or p-type polycrystalline silicon carbide, Al, Ni, Ti, molybdenum (Mb), tantalum ( It may be a metal such as Ta), niobium (Nb), tungsten (W), or a nitride thereof.
Furthermore, although the example of the silicon oxide formed by the thermal oxidation method was shown as a material of the gate insulating film 50, it is not restricted to this, It forms by the CVD method and the physical vapor deposition (PVD) method. It may be silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, hafnium oxide, zirconium oxide, or the like. Further, after the gate insulating film 50 is formed, heat treatment may be performed in a gas atmosphere such as Ar, nitrogen, nitric oxide, nitrogen dioxide or the like.

In the method for manufacturing the silicon carbide semiconductor device in the present embodiment, when Al and B ions are implanted by forming first implantation mask 100, the first ion implantation is performed as shown in FIG. Even if there is an unintentional micromask 120 such as dust or resist residue on the surface of the base region 30, depending on the diameter of the micromask 120, the source electrode 70 and the drain electrode 80 may become conductive. There is also an effect that can be avoided.
If the diameter of the unintentional micromask 120 is less than or equal to twice the width L _ch2 of the second base region 31, as shown in FIG. Since the n-type due to 120 becomes p-type as shown in FIG. 17 due to the diffusion of B by annealing, the silicon carbide drift layer 20 connected to the drain electrode 80 and the source region 40 connected to the source electrode 70. Can be prevented from becoming conductive.
Therefore, according to the method for manufacturing the silicon carbide semiconductor device in the present embodiment, it is possible to reduce the occurrence of defects due to unintentional micromask 120.

Embodiment 2. FIG.
FIG. 18 is a schematic cross-sectional view of a vertical MOSFET that is a silicon carbide semiconductor device in the second embodiment for carrying out the present invention. Also in this embodiment, the first conductivity type is described as n-type and the second conductivity type is described as p-type.

  In FIG. 18, the second base region 31 is the same as the vertical MOSFET of the first embodiment except that the second base region 31 is formed only in the lateral direction of the cross section of the first base region 30. The manufacturing method is the same as the manufacturing method in the first embodiment, except that the depth of B ion implantation in the first embodiment is made shallower than the depth of Al ion implantation.

  When the vertical MOSFET according to the present embodiment is compared with the vertical MOSFET according to the first embodiment, the vertical MOSFET according to the present embodiment has a silicon carbide drift from the channel region toward the silicon carbide substrate 10 in the ON state. Since the width in the cross-sectional direction of the n-type JFET region which is a current path formed in the layer 20 becomes larger, the resistance of the JFET region is lowered, and the on-resistance can be further reduced.

  Therefore, according to the silicon carbide semiconductor device and the method for manufacturing the silicon carbide semiconductor device in the present embodiment, a silicon carbide semiconductor device that is a vertical MOSFET having a lower on-resistance can be obtained.

Embodiment 3 FIG.
In the method for manufacturing a vertical MOSFET that is a silicon carbide semiconductor device in the present embodiment, the first ion implantation mask 100 is widened and the second ion implantation mask 110 is formed first in the first embodiment. A mask corresponding to the second ion implantation mask 110 of the first embodiment is formed, and a mask corresponding to the first ion implantation mask 100 of the first embodiment is formed by reducing the width of the mask. Along with this, the order of n-type impurity ion implantation and p-type impurity ion implantation is also changed.

Hereinafter, the steps corresponding to FIGS. 3 to 7 of the first embodiment will be described in order with reference to FIGS. Other steps are the same as those in the first embodiment.
As in the first embodiment, after silicon carbide drift layer 20 is epitaxially grown on the surface of silicon carbide substrate 10, a third implantation made of a resist material is formed on the surface of silicon carbide drift layer 20 as shown in FIG. A mask 130 is formed, and N which is an n-type impurity is ion-implanted. Subsequently, as shown in FIG. 20, the fourth implantation mask 140 is reduced in width by removing the periphery of the third implantation mask 130 by a thickness L _ch1 by plasma treatment using oxygen gas or the like. Form. Next, as shown in FIGS. 21 and 22, ions of Al and B, which are p-type impurities, are sequentially implanted into the silicon carbide drift layer 20 on which the fourth implantation mask 140 is formed. At this time, the order of ion implantation of Al and B may be either. After removing the fourth implantation mask 140 after these ion implantations, the process is the same as in the first embodiment.

  In the present embodiment, an example of the resist material is shown as the material of the third implantation mask 130, but the material of the third implantation mask 130 may be silicon oxide, silicon nitride, polycrystalline silicon, or the like. The width may be reduced by a method such as wet etching suitable for each material.

  According to the method for manufacturing a silicon carbide semiconductor device in the present embodiment, a silicon carbide semiconductor device similar to the silicon carbide semiconductor device in the first embodiment can be obtained, and similar effects are obtained. Compared with the method for manufacturing the silicon carbide semiconductor device of Embodiment 1, the number of steps for forming and removing the inorganic film can be reduced, and an ion implantation mask that can be easily formed and removed can be used. The process can be simplified.

Embodiment 4 FIG.
The method for manufacturing the vertical MOSFET that is the silicon carbide semiconductor device in the present embodiment corresponds to the third ion implantation mask 130 without reducing the width of the mask corresponding to the third ion implantation mask 130 of the fourth embodiment. Al ions are implanted from an oblique direction using a mask.

Hereinafter, steps corresponding to FIGS. 19 to 22 of the third embodiment will be described in order with reference to FIGS. 23 to 25. Other steps are the same as those in the third embodiment.
As in the third embodiment, after silicon carbide drift layer 20 is epitaxially grown on the surface of silicon carbide substrate 10, as shown in FIG. 23, the fifth implantation made of a resist material is formed on the surface of silicon carbide drift layer 20. A mask 150 is formed, and N which is an n-type impurity is ion-implanted. Subsequently, as shown in FIG. 24, Al, which is a p-type impurity, is ion-implanted from an oblique direction into the silicon carbide drift layer 20 on which the fifth implantation mask 150 is formed. Next, as shown in FIG. 25, B is ion-implanted from an oblique direction in the same manner as Al ion implantation. In addition, ion implantation of Al and B is performed while rotating the silicon carbide substrate 10 together. Here, the order of ion implantation of Al, B, and N may be any order. After removing the fifth implantation mask 150 after these ion implantations, it is the same as in the third embodiment.

  In this embodiment, an example is shown in which B ion implantation is performed from an oblique direction. However, even if B ion implantation is performed from a vertical direction instead of an oblique direction, the diffusion distance of B by annealing is Al. It is sufficient that the width is larger than the approach width in the lateral direction of the cross section by the oblique injection.

  According to the method for manufacturing a silicon carbide semiconductor device in the present embodiment, a silicon carbide semiconductor device similar to the silicon carbide semiconductor device in the first embodiment can be obtained, and similar effects are obtained. Further, as compared with the method for manufacturing the silicon carbide semiconductor device of the third embodiment, it is not necessary to change the cross-sectional shape of the mask for ion implantation, and the manufacturing process can be simplified.

It is a cross-sectional schematic diagram of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of MOSFET which is a silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a relationship diagram between the impurity concentration and the distance from the silicon carbide drift layer surface, showing an example of the impurity concentration distribution in the depth direction of Al in the first embodiment of the present invention. FIG. 6 is a relationship diagram between an impurity concentration and a diffusion distance showing a state of diffusion by annealing after ion implantation of B in Embodiment 1 of the present invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 1 of this invention. It is a cross-sectional schematic diagram of the silicon carbide semiconductor device in Embodiment 2 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 3 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 3 of this invention. It is a cross-sectional schematic diagram which shows the silicon carbide semiconductor device manufacturing method in Embodiment 3 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 3 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 4 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 4 of this invention. It is a cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide semiconductor device in Embodiment 4 of this invention.

Explanation of symbols

  10 silicon carbide substrate, 20 silicon carbide drift layer, 30 first base region, 31 second base region, 40 source region, 50 gate insulating film, 60 gate electrode, 70 source electrode, 80 drain electrode, 100 first implantation mask, 110 second implantation mask, 111 inorganic film, 120 micromask, 130 third implantation mask, 140 fourth implantation mask, 150 fifth implantation mask.

Claims (9)

A first conductivity type silicon carbide substrate;
A silicon carbide drift layer of a first conductivity type provided on the main surface of the silicon carbide substrate;
A pair of source regions of the first conductivity type provided in a surface layer portion of the silicon carbide drift layer and spaced apart by a predetermined width;
The second conductivity type first impurity and the first impurity are carbonized more deeply than the source region in the interval direction between the pair of source regions and in the interval direction outside the source region by a first width. A pair of first base regions of a second conductivity type containing second impurities of a second conductivity type having a large diffusion coefficient in silicon;
A second impurity that is provided by diffusing the second impurity to the outside by a second width from the first base region toward the interval between the pair of first base regions, and is contained in the first base region. A silicon carbide semiconductor device comprising: a pair of second conductivity type second base regions containing a second conductivity type impurity having a concentration lower than that of the conductivity type impurity. Wherein the first impurity is aluminum, the silicon carbide semiconductor device according to claim 1, wherein the second impurity is boron. 2. The silicon carbide semiconductor device according to claim 1, wherein an impurity concentration of the first impurity in the first base region increases in a depth direction. The second base region, carbide of claim 1, wherein the impurity concentration of said second impurity as the distance from said first base region at the surface layer portion of the drift layer of the silicon carbide gradually decreases Silicon semiconductor device. 2. The silicon carbide semiconductor device according to claim 1, wherein an impurity concentration of the first impurity in the first base region is not less than 1 × 10 ¹⁷ cm ^{−3 and not} more than 1 × 10 ¹⁹ cm ⁻³ . The impurity concentration of the second impurity in the second base region, the silicon carbide semiconductor device according to claim 1, characterized in that 5 × 10 ¹⁷ cm ^-3 or less. The silicon carbide semiconductor device according to claim 1, wherein the first width is not less than 0.01 μm and not more than 0.5 μm. The silicon carbide semiconductor device according to claim 1, wherein the second width is 2 μm or less. Forming a first conductivity type silicon carbide drift layer on a main surface of a first conductivity type silicon carbide substrate; and forming a first implantation mask having a predetermined width on a surface side of the silicon carbide drift layer; ,
Forming a first base region by ion-implanting a second impurity of a first conductivity type into the silicon carbide drift layer having the first implantation mask formed on the surface;
Ion-implanting a second conductivity type second impurity having a diffusion coefficient in silicon carbide larger than that of the first impurity into the silicon carbide drift layer formed with the first implantation mask;
Widening the first implantation mask by a first width in a self-aligned manner to form a second implantation mask;
A step of forming a source region in the first base region by ion-implanting a third impurity of a first conductivity type into the silicon carbide drift layer having the second implantation mask formed on a surface thereof;
And a step of diffusing the second impurity to form a second base region having a second width.

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