JP5116869B1 - 薄膜太陽電池およびその製造方法 - Google Patents
薄膜太陽電池およびその製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002105 nanoparticle Substances 0.000 claims abstract description 107
- 230000031700 light absorption Effects 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000006185 dispersion Substances 0.000 claims abstract description 42
- 239000010408 film Substances 0.000 claims abstract description 42
- 239000012212 insulator Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000005361 soda-lime glass Substances 0.000 claims description 13
- 239000002923 metal particle Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 230000000694 effects Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000002243 precursor Substances 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 3
- -1 chalcogenide compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】透明導電膜(4)および金属裏面電極層(2)間に薄膜の光吸収層(3)を配置した薄膜太陽電池において、前記金属裏面電極層(2)と前記光吸収層(3)との界面に、少なくともその表面が絶縁体であるナノ粒子(6、6・・・)を含むナノ粒子分散層(5)を設ける。
【選択図】図1
Description
図1は、本発明の第1の実施形態に係る、サブストレート構造の薄膜太陽電池の概略構造を示す断面図であり、特に、p型光吸収層としてCIS系半導体を用いた薄膜太陽電池の構造を示している。図において、1は基板であり、ガラス、プラスティック、金属板等で構成される。2はMo、Ti、Cr等を材料とする金属裏面電極層、3はCIS系半導体で構成されるp型光吸収層、4はZnO、ITO等を材料とするn型透明導電膜であり、この太陽電池の窓層を構成する。なお、p型光吸収層3とn型透明導電膜4間に、Zn(O、S、OH)、CdS、In2S3等を材料とする高抵抗バッファ層を設けても良い。p型光吸収層3は、Cu(In、Ga)Se2、Cu(In、Ga)(Se、S)2、CuInS2等で構成される。
[形態1]
形態1のナノ粒子6は、単一の物質、例えば、アルミナ、シリカ、SLG(ソーダライムガラス)、シリコンナイトライドの絶縁体で形成されるナノ粒子であって、ポイントコンタクト効果を生じるために、その直径を10nm〜500nm程度にされている。このようなナノ粒子として、市販されているものを使用することができる(例えば、http://www.sigmaaldrich.com/japan/materialscience/nano−materials/nanopowders.html参照)。
形態2のナノ粒子6は、金属(例えば、Au、Ag、Cu)のナノ粒子を、アルミナ、シリカ、SLG、シリコンナイトライド等で被覆し、粒子表面を絶縁体としたものであり、ポイントコンタクト効果を生じるために、粒子径を10nm〜500nm程度とする。このようなナノ粒子は、その粒子径を100nm以下(入射光の波長に対して充分に小さい大きさ)とすることによって、ナノ粒子分散層5において、可視領域での表面プラズモン共鳴の発生を期待できる。ナノ粒子分散層5で表面プラズモン共鳴が発生すると、局所的に大きな電界が発生して光の強度を増加させ、大きな光電流を発生する。その結果、光の吸収効率が増大し、太陽電池の光電変換効率が向上する(特許文献2の段落[0017]参照)。従って、粒径が100nm以下の形態2のナノ粒子でナノ粒子分散層5を形成することによって、ポイントコンタクト効果と共に表面プラズモン効果によって、薄膜太陽電池の光電変換効率を更に向上させることができる。金属粒子をシリカ等の絶縁物で被覆した形態2のナノ粒子およびその表面プラズモン共鳴については、例えば、http://www.chem.tsukuba.ac.jp/teranisi/research/Opt.htmlを参照することができる。
形態3のナノ粒子6は、中空の絶縁体(例えば、アルミナ、シリカ、SLG、シリコンナイトライド等)からなるナノ粒子である。粒径が10nm〜500nmのこのようなナノ粒子を用いてナノ粒子分散層5を形成することによって、金属電極層側でポイントコンタクト効果を得ることができる。また、CIS系薄膜太陽電池、CZTS系薄膜太陽電池において、粒径が100nm以上の形態3のナノ粒子でナノ粒子分散層5を形成することによって、ポイントコンタクト効果と共に裏面反射効果を得ることができ、薄膜太陽電池の光電変換効率を更に向上させることができる。形態3のナノ粒子については、例えば、http://www.nittetsukou.co.jp/rdd/tech/tech_silinax.htmlに記載されている。
図2および図3を参照して、図1に示すサブストレート構造のCIS系薄膜太陽電池の製造方法を説明する。
図4は、本発明の実施形態2に係る、スーパーストレート構造の薄膜太陽電池の概略構造を示す断面図であり、特に、アモルファスシリコンで構成した薄膜太陽電池の構造を示している。図4において、10はガラス等の透明基板、11はITO等の透明導電膜、12はp型アモルファスシリコン層、13はi型アモルファスシリコン層、14はn型アモルファスシリコン層を示す。透明導電膜11は基板上にスパッタ等によりITO膜を製膜して形成される。p型アモルファスシリコン層12、i型アモルファスシリコン層13およびn型アモルファスシリコン層14は光吸収層を構成し、p、i、n型のアモルファスシリコンをそれぞれ、プラズマCVD等により透明導電膜11上に製膜して形成される。
2 金属裏面電極層
3 CIS系p型光吸収層
4 透明導電膜
5 ナノ粒子分散層
6 ナノ粒子
10 透明基板
11 透明導電膜
12 p型アモルファスシリコン層
13 i型アモルファスシリコン層
14 n型アモルファスシリコン層
15 ナノ粒子分散層
16 ナノ粒子
17 金属裏面電極層
Claims (14)
- 透明導電膜および金属裏面電極層間に薄膜の光吸収層を配置した薄膜太陽電池において、前記金属裏面電極層と前記光吸収層との界面に、少なくともその表面が絶縁体であるナノ粒子を含むナノ粒子分散層を設けたことを特徴とする、薄膜太陽電池。
- 請求項1に記載の薄膜太陽電池において、前記ナノ粒子は、全体が前記絶縁体で形成されている粒子、内部が中空の粒子、または金属粒子の表面を前記絶縁体で被覆した粒子の何れかである、薄膜太陽電池。
- 請求項2に記載の薄膜太陽電池において、前記絶縁体は、シリカ、アルミナ、シリコンナイトライドまたはソーダライムガラスの何れかである、薄膜太陽電池。
- 請求項2または3に記載の薄膜太陽電池において、前記絶縁体の屈折率が前記光吸収層の屈折率よりも小さい場合、前記ナノ粒子の粒径は100nm以上500nm以下である、薄膜太陽電池。
- 請求項2に記載の薄膜太陽電池において、前記ナノ粒子が金属粒子の表面を前記絶縁体で被覆した粒子である場合、前記ナノ粒子の粒径は100nm以下である、薄膜太陽電池。
- 請求項5に記載の薄膜太陽電池において、前記金属粒子はAu、AgまたはCuである、薄膜太陽電池。
- 請求項1乃至6の何れか1項に記載の薄膜太陽電池において、前記ナノ粒子分散層は、前記金属裏面電極層と前記光吸収層間の界面の前記光吸収層側に形成される、薄膜太陽電池。
- 請求項1乃至6の何れか1項に記載の薄膜太陽電池において、前記ナノ粒子分散層は、前記金属裏面電極層と前記光吸収層間の界面の前記金属裏面電極層側に形成される、薄膜太陽電池。
- 基板上に金属裏面電極層を形成し、
少なくとも表面が絶縁体であるナノ粒子を含む溶液を、前記金属裏面電極層表面に塗布し乾燥させることによって、前記金属裏面電極層上にナノ粒子分散層を形成し、
前記ナノ粒子分散層を含む前記金属裏面電極層上に薄膜のp型光吸収層を形成し、
前記光吸収層上にn型透明導電膜を形成する、各ステップを備える、薄膜太陽電池の製造方法。 - 請求項9に記載の方法において、前記金属裏面電極層はMoで構成され、前記p型光吸収層は化合物半導体で構成される、薄膜太陽電池の製造方法。
- 透明基板上に透明導電膜を形成し、
前記透明導電膜上に少なくともpn接合を含む薄膜の光吸収層を形成し、
少なくとも表面が絶縁体であるナノ粒子を含む溶液を、前記光吸収層表面に塗布し乾燥させることによって、前記光吸収層上にナノ粒子分散層を形成し、
前記ナノ粒子分散層を含む前記光吸収層上に金属裏面電極層を形成する、各ステップを備える、薄膜太陽電池の製造方法。 - 請求項9乃至11の何れか1項に記載の方法において、前記ナノ粒子は、全体が前記絶縁体で形成されている粒子、内部が中空の粒子、または金属粒子の表面を前記絶縁体で被覆した粒子の何れかである、薄膜太陽電池の製造方法。
- 請求項12に記載の方法において、前記ナノ粒子が金属粒子の表面を前記絶縁体で被覆した粒子である場合、前記ナノ粒子の粒径は100nm以下である、薄膜太陽電池の製造方法。
- 請求項9乃至13の何れか1項に記載の方法において、前記絶縁体は、シリカ、アルミナまたはソーダライムガラスの何れかである、薄膜太陽電池の製造方法。
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US14/241,797 US9450116B2 (en) | 2011-09-02 | 2012-08-23 | Thin film solar cell and manufacturing method therefor |
EP12828604.4A EP2752885A4 (en) | 2011-09-02 | 2012-08-23 | THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME |
CN201280042191.7A CN103765606A (zh) | 2011-09-02 | 2012-08-23 | 薄膜太阳能电池及其制造方法 |
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CN112838134A (zh) * | 2021-01-25 | 2021-05-25 | 浙江上方电子装备有限公司 | 一种铜铟镓硒薄膜太阳能电池及其制备方法 |
US11031512B2 (en) | 2017-03-17 | 2021-06-08 | Kabushiki Kaisha Toshiba | Solar cell, multijunction solar cell, solar cell module, and solar power generation system |
US11171253B2 (en) | 2016-09-21 | 2021-11-09 | Kabushiki Kaisha Toshiba | Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system |
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US20120104460A1 (en) | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
US11271128B2 (en) * | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
KR101478448B1 (ko) | 2013-07-01 | 2015-01-02 | 서울대학교산학협력단 | 반도체 나노입자를 포함하는 광흡수층의 제작방법 및 이 광흡수층을 포함하는 반도체 소자의 제작방법 |
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CN104143587A (zh) * | 2014-07-22 | 2014-11-12 | 苏州瑞晟纳米科技有限公司 | 一种可以提高铜铟镓硒薄膜太阳能电池性能的表面钝化技术 |
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CN109004037A (zh) * | 2017-06-07 | 2018-12-14 | 中国科学院物理研究所 | 光电子器件及其制造方法 |
JP6886933B2 (ja) * | 2018-03-06 | 2021-06-16 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
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US11171253B2 (en) | 2016-09-21 | 2021-11-09 | Kabushiki Kaisha Toshiba | Solar cell, multi-junction solar cell, solar cell module, and photovoltaic system |
US11031512B2 (en) | 2017-03-17 | 2021-06-08 | Kabushiki Kaisha Toshiba | Solar cell, multijunction solar cell, solar cell module, and solar power generation system |
CN112838134A (zh) * | 2021-01-25 | 2021-05-25 | 浙江上方电子装备有限公司 | 一种铜铟镓硒薄膜太阳能电池及其制备方法 |
CN112838134B (zh) * | 2021-01-25 | 2023-08-15 | 浙江上方电子装备有限公司 | 一种铜铟镓硒薄膜太阳能电池及其制备方法 |
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