JP5111419B2 - 熱化学反応の反応速度を高める方法及び装置 - Google Patents
熱化学反応の反応速度を高める方法及び装置 Download PDFInfo
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Description
(a)反応チャンバ内に、反応物質流が実質的に完全に通過する多孔性挿入物を含み、多孔性挿入物を有する反応チャンバ容積は、1未満の平均気孔度と、3mm以下の移動距離と、を有する。
(b)反応チャンバは、バルク反応物質流と平行な6インチ(15.24cm)以下の長さと、2インチ(5.08cm)以下の高さと、を有し、こうして、多孔性挿入物を貫通して高められた熱転移速度で反応熱を移動させる。
(c)熱転移チャンバは、反応チャンバと熱接触状態にあり、熱転移チャンバは、熱転移チャンバと反応チャンバとの間の壁を横断して高められた熱転移速度で熱を移動させる。こうして、熱化学反応用の反応チャンバ容積当たりの熱反応速度を高め、高められた反応チャンバ容積当たりの反応速度の慣用の熱化学反応用反応チャンバ容積当たりの反応速度に対する比率を少なくとも2とする。
本発明の好ましい実施形態を説明してきたが、当業者には本発明の広範な範囲を逸脱することなく、多くの変化及び変更をなし得ることが明らかであろう。したがって、特許請求の範囲は、本発明の本当の範囲内にある限りのすべての変化及び変更をカバーすることを意図する。
[1]炭化水素蒸気改質反応を行う方法であって、蒸気及び炭化水素を反応チャンバ内に通過させる工程を含み、
当該反応チャンバは、バルク反応物質流に平行な長さ6インチ(15cm)以下と高さ2インチ(5cm)以下とで画定される反応チャンバ容積を有し、
当該反応チャンバは、触媒物質を載置する多孔性挿入物を含み、
当該反応チャンバ容積と熱的に接触する熱転移チャンバから当該多孔性挿入物へと熱を移動させ、当該熱は熱転移チャンバと反応チャンバとの間の壁を横断して3mm以下の熱転移距離で移動し、
蒸気及び炭化水素は100ミリ秒以下の接触時間で触媒物質と接触する
ことを特徴とする方法。
[2]熱化学反応用の入口及び出口を有する反応チャンバの反応チャンバ容積当たりの高い反応速度を得る方法であって、
(a)3mm以下の熱転移距離を有するように、バルク反応物質流に平行な6インチ(15cm)以下の長さと2インチ(5cm)以下の高さとを有する反応チャンバ容積内に、多孔性挿入物を置く工程と
(b)当該反応チャンバ容積と熱的に接触する状態に熱転移チャンバを設けて、当該熱転移チャンバと反応チャンバとの間の壁を横断して熱を転移させる工程と、
を具備し、当該多孔性挿入物は当該反応チャンバの内面上の隆起形状と接触することを特徴とする方法。
[3]前記多孔性挿入物は、多孔性モノリス、ファイバー又はこれらの組み合わせである[2]に記載の方法。
[4]触媒が前記多孔性挿入物の上にある[3]に記載の方法。
[5]前記多孔性挿入物は、多孔性モノリスを含み、多孔性モノリスの上には溶液堆積法による界面層と、当該界面層の上の触媒金属とを有する[4]に記載の方法。
[6]前記多孔性挿入物は前記多孔性モノリスと前記溶液堆積法による界面層との間に緩衝層を有する[5]に記載の方法。
[7]前記緩衝層は、金属酸化物からなる[6]に記載の方法。
[8]前記多孔性モノリスは、金属フォーム、セラミックフォーム、ハニカム,チューブバンク又は積層型マイクロチャネルアセンブリである[5]に記載の方法。
[9]前記多孔性挿入物は、粉末である[2]に記載の方法。
[10]前記熱化学反応は、炭化水素蒸気改質熱化学反応である[2]〜[9]のいずれかに記載の方法。
[11]炭化水素蒸気改質熱化学反応は、100ミリ秒以下の接触時間で行われる[10]に記載の方法。
[12]前記緩衝層は、蒸着によって形成された多結晶金属酸化物である[5]に記載の方法。
[13]熱化学反応は水性ガス転化熱化学反応である[2]〜[12]のいずれかに記載の方法。
[14]熱化学反応のための入口及び出口を有する反応チャンバの反応チャンバ容積当たりの反応速度を高める容器であって、
(a)バルク反応物質流に平行な6インチ(15cm)以下の長さと2インチ(5cm)以下の高さとを有する反応チャンバ容積と、
(b)運転中に反応物質流が多孔性挿入物を通過し、3mm以下の熱転移距離を有するように、反応チャンバ容積内に置かれた多孔性挿入物と、
(c)反応チャンバ容積と熱的に接触している熱転移チャンバと、
を具備し、当該熱転移チャンバと反応チャンバとの間の壁を横断して熱が転移し、当該多孔性挿入物は当該反応チャンバの内面上の隆起形状と接触する、ことを特徴とする容器。
[15]前記多孔性挿入物は、粉末である[14]に記載の容器。
[16]触媒が前記多孔性挿入物の上にある[14]又は[15]に記載の容器。
[17]前記多孔性挿入物は、多孔性担体と触媒物質との間に溶液堆積法による界面層を有する[15]に記載の容器。
[18]前記多孔性挿入物は、セラミックフォーム、ハニカム、チューブバンク又は積層型マイクロチャネルアセンブリである多孔性モノリスである[17]に記載の容器。
[19]前記多孔性挿入物は、多孔性担体と溶液堆積法による界面層との間に蒸着された緩衝層を有する多孔性モノリスである[14]〜[18]のいずれかに記載の容器。
[20]前記緩衝層は、金属酸化物からなる[19]に記載の容器。
[21]前記多孔性挿入物は、粉末、多孔性モノリス、ファイバー又はこれらの組み合わせを含む[14]〜[20]のいずれかに記載の容器。
[22]前記多孔性担体は、金属フォームである[17]に記載の方法。
[23]前記多孔性担体は、多孔性セラミックである[17]に記載の方法。
[24]前記界面層は、溶液堆積法による金属酸化物からなる[17]に記載の方法。
[25]前記溶液堆積法による金属酸化物は、γAl2O3、SiO2、ZrO2、TiO2及びこれらの組み合わせからなる群より選択される[24]に記載の容器。
[26]前記多孔性挿入物は、前記反応チャンバから取り外し可能である[14]〜[25]のいずれかに記載の容器。
[27]前記多孔性挿入物は、蒸着された金属酸化物である緩衝層を有する多孔性モノリスである[14]に記載の容器。
[28]前記蒸着された金属酸化物は、Al2O3、TiO2及びこれらの組み合わせからなる群より選択される[27]に記載の容器。
[29]前記Al2O3は、αAl2O3、γAl2O3及びこれらの組み合わせからなる群より選択される[28]に記載の容器。
[30]前記緩衝層は、複数の副層を含む[27]に記載の容器。
Claims (8)
- 炭化水素蒸気改質反応を行う方法であって、蒸気及び炭化水素を反応チャンバ内に通過させる工程を含み、
当該反応チャンバは、バルク反応物質流に平行な長さ6インチ(15cm)以下と高さ2インチ(5cm)以下とで画定される反応チャンバ容積を有し、
当該反応チャンバは、触媒物質を載置する多孔性挿入物を含み、
当該反応チャンバ容積と熱的に接触する熱転移チャンバから当該多孔性挿入物へと熱を移動させ、当該熱は熱転移チャンバと反応チャンバとの間の壁を横断して3mm以下の熱転移距離で移動し、
蒸気及び炭化水素は100ミリ秒以下の接触時間で触媒物質と接触する
ことを特徴とする方法。 - 熱化学反応用の入口及び出口を有する反応チャンバの反応チャンバ容積当たりの高い反応速度を得る方法であって、
(a)反応チャンバ容積内に多孔性挿入物を置き、反応物質流が多孔性挿入物を通過し、多孔性挿入物を有する反応チャンバ容積は3mm以下の熱転移距離を有し、
(b)反応チャンバ容積は、バルク反応物質流に平行な6インチ(15cm)以下の長さと2インチ(5cm)以下の高さとを有し、
(c)熱転移チャンバを当該反応チャンバ容積と熱的に接触させるように設け、熱転移チャンバと反応チャンバとの間の壁を横断して熱を転移させ、
熱化学反応は、100ミリ秒以下の接触時間で行われる炭化水素蒸気改質熱化学反応である、
ことを特徴とする方法。 - 前記多孔性挿入物は、多孔性担体と、界面層と、当該多孔性担体と界面層との間の緩衝層とを具備する、請求項2に記載の方法。
- 蒸気及び炭化水素は50ミリ秒以下の接触時間で触媒物質と接触する、請求項2又は3に記載の方法。
- 熱化学反応のための入口及び出口を有する反応チャンバの反応チャンバ容積当たりの反応速度を高める容器であって、
(a)運転中に反応物質流が多孔性挿入物を通過し、多孔性挿入物を有する反応チャンバ容積が3mm以下の熱転移距離を有するように、反応チャンバ容積内に置かれた多孔性挿入物と、
(b)バルク反応物質流に平行な長さと2インチ(5cm)以下の高さとを有する反応チャンバ容積と、
(c)反応チャンバ容積と熱的に接触している熱転移チャンバと、を具備し、当該熱転移チャンバと反応チャンバとの間の壁を横断して熱が転移し、当該多孔性挿入物は当該反応チャンバの内面上の隆起形状と接触する、ことを特徴とする容器。 - 多孔性挿入物が粉末を含む、請求項1に記載の方法。
- 蒸気及び炭化水素は50ミリ秒以下の接触時間で触媒物質と接触する、請求項1又は6に記載の方法。
- 触媒物質はRhを含む、請求項1に記載の方法。
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|---|---|---|---|
| US09/123,779 | 1998-07-27 | ||
| US09/123,779 US6540975B2 (en) | 1998-07-27 | 1998-07-27 | Method and apparatus for obtaining enhanced production rate of thermal chemical reactions |
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| JP2009074330A Expired - Fee Related JP5111419B2 (ja) | 1998-07-27 | 2009-03-25 | 熱化学反応の反応速度を高める方法及び装置 |
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| US (1) | US6540975B2 (ja) |
| EP (1) | EP1102628B1 (ja) |
| JP (2) | JP4669126B2 (ja) |
| AT (1) | ATE346683T1 (ja) |
| CA (2) | CA2338576C (ja) |
| DE (1) | DE69934231T2 (ja) |
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| EP1102628B1 (en) | 2006-11-29 |
| NO20010375D0 (no) | 2001-01-23 |
| CA2657485A1 (en) | 2001-08-02 |
| US6540975B2 (en) | 2003-04-01 |
| CA2338576C (en) | 2008-04-15 |
| EP1102628A1 (en) | 2001-05-30 |
| JP2009173539A (ja) | 2009-08-06 |
| JP4669126B2 (ja) | 2011-04-13 |
| DE69934231D1 (de) | 2007-01-11 |
| DE69934231T2 (de) | 2007-03-29 |
| NO20010375L (no) | 2001-03-23 |
| US20020031471A1 (en) | 2002-03-14 |
| CA2657485C (en) | 2014-09-16 |
| JP2002521192A (ja) | 2002-07-16 |
| CA2338576A1 (en) | 2000-02-10 |
| ATE346683T1 (de) | 2006-12-15 |
| WO2000006295A1 (en) | 2000-02-10 |
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