JP5110785B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5110785B2
JP5110785B2 JP2005294402A JP2005294402A JP5110785B2 JP 5110785 B2 JP5110785 B2 JP 5110785B2 JP 2005294402 A JP2005294402 A JP 2005294402A JP 2005294402 A JP2005294402 A JP 2005294402A JP 5110785 B2 JP5110785 B2 JP 5110785B2
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JP
Japan
Prior art keywords
region
layer
light
electrode layer
wettability
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Expired - Fee Related
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JP2005294402A
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English (en)
Japanese (ja)
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JP2006133762A (ja
JP2006133762A5 (enExample
Inventor
厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005294402A priority Critical patent/JP5110785B2/ja
Publication of JP2006133762A publication Critical patent/JP2006133762A/ja
Publication of JP2006133762A5 publication Critical patent/JP2006133762A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005294402A 2004-10-08 2005-10-07 表示装置の作製方法 Expired - Fee Related JP5110785B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005294402A JP5110785B2 (ja) 2004-10-08 2005-10-07 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004296525 2004-10-08
JP2004296525 2004-10-08
JP2005294402A JP5110785B2 (ja) 2004-10-08 2005-10-07 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006133762A JP2006133762A (ja) 2006-05-25
JP2006133762A5 JP2006133762A5 (enExample) 2008-11-20
JP5110785B2 true JP5110785B2 (ja) 2012-12-26

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JP2005294402A Expired - Fee Related JP5110785B2 (ja) 2004-10-08 2005-10-07 表示装置の作製方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101851565B1 (ko) 2011-08-17 2018-04-25 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085315A (ja) * 2006-08-31 2008-04-10 Toppan Printing Co Ltd 薄膜トランジスタおよびその製造方法
US8937013B2 (en) 2006-10-17 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor
JP5254589B2 (ja) * 2006-10-17 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2008084736A1 (ja) * 2007-01-09 2008-07-17 Konica Minolta Holdings, Inc. 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
JP2008300514A (ja) * 2007-05-30 2008-12-11 Ihi Corp レーザアニール方法及びレーザアニール装置
WO2009057665A1 (ja) * 2007-10-31 2009-05-07 Sumitomo Chemical Company, Limited 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法
TWI508282B (zh) * 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
KR20220100086A (ko) 2009-07-10 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102153034B1 (ko) * 2009-12-04 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5482851B2 (ja) * 2012-09-07 2014-05-07 コニカミノルタ株式会社 画素アレイ
CN108432047B (zh) * 2015-12-28 2020-11-10 夏普株式会社 扫描天线及其制造方法
KR102572434B1 (ko) * 2017-08-31 2023-08-30 엘지디스플레이 주식회사 유기발광표시장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147979B2 (ja) * 1992-02-28 2001-03-19 出光興産株式会社 薄膜の製造方法及び該方法を用いたカラーフィルタの製造方法
JPH11251259A (ja) * 1998-03-04 1999-09-17 Seiko Epson Corp 半導体層への不純物の導入方法、および薄膜トランジスタ並びに半導体装置の製造方法
JP3870562B2 (ja) * 1998-07-16 2007-01-17 セイコーエプソン株式会社 パターン形成方法、およびパターン形成基板の製造方法
JP3970583B2 (ja) * 2001-11-22 2007-09-05 株式会社東芝 半導体装置及びその製造方法
JP4517569B2 (ja) * 2002-10-18 2010-08-04 カシオ計算機株式会社 表示パネルの製造方法
JP4700484B2 (ja) * 2004-12-17 2011-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101851565B1 (ko) 2011-08-17 2018-04-25 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자

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