JP5108354B2 - 高純度シリコンの製造方法 - Google Patents
高純度シリコンの製造方法 Download PDFInfo
- Publication number
- JP5108354B2 JP5108354B2 JP2007090890A JP2007090890A JP5108354B2 JP 5108354 B2 JP5108354 B2 JP 5108354B2 JP 2007090890 A JP2007090890 A JP 2007090890A JP 2007090890 A JP2007090890 A JP 2007090890A JP 5108354 B2 JP5108354 B2 JP 5108354B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- sintering
- waste
- purity silicon
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 37
- 239000010703 silicon Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 238000005245 sintering Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 239000002699 waste material Substances 0.000 claims description 17
- 239000011863 silicon-based powder Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000006479 redox reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010802 sludge Substances 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012065 filter cake Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Silicon Compounds (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
Description
(1)シリコン粉末廃棄物を、粉末状態のままで放電プラズマ焼結法によって非酸化性雰囲気において高密度に焼結することにより、高純度シリコンを製造する方法。
(2)前記シリコン粉末廃棄物はシリコンウエハーの生産から生じるものである上記(1)に記載の方法。
(3)酸化還元反応が伴う上記(1)又は(2)に記載の方法。
(4)前記非酸化性雰囲気が、真空、窒素ガス、アルゴンガス、水素ガスあるいはこれらの混合ガスのいずれかである上記(1)ないし(3)のいずれかに記載の方法。
(5)加圧圧力10〜100MPa、加熱・焼結温度を500〜2000℃の範囲で行う上記(1)ないし(4)のいずれかに記載の方法。
2 上部パンチ電極
3 下部パンチ電極
4 上部パンチ
5 下部パンチ
6 焼結ダイ
8 粉末
9 水冷真空チャンバー
P 荷重
Claims (5)
- シリコン粉末廃棄物を、粉末状態のままで放電プラズマ焼結法によって非酸化性雰囲気において高密度に焼結することにより、高純度シリコンを製造する方法。
- 前記シリコン粉末廃棄物はシリコンウエハーの生産から生じるものである請求項1に記載の方法。
- 酸化還元反応が伴う請求項1又は2に記載の方法。
- 前記非酸化性雰囲気が、真空、窒素ガス、アルゴンガス、水素ガスあるいはこれらの混合ガスのいずれかである請求項1ないし3のいずれかに記載の方法。
- 加圧圧力10〜100MPa、加熱・焼結温度を500〜2000℃の範囲で行う請求項1ないし4のいずれかに記載の方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007090890A JP5108354B2 (ja) | 2007-03-30 | 2007-03-30 | 高純度シリコンの製造方法 |
KR1020080015169A KR20080089163A (ko) | 2007-03-30 | 2008-02-20 | 고순도 실리콘의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007090890A JP5108354B2 (ja) | 2007-03-30 | 2007-03-30 | 高純度シリコンの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008247670A JP2008247670A (ja) | 2008-10-16 |
JP5108354B2 true JP5108354B2 (ja) | 2012-12-26 |
Family
ID=39973074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007090890A Active JP5108354B2 (ja) | 2007-03-30 | 2007-03-30 | 高純度シリコンの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5108354B2 (ja) |
KR (1) | KR20080089163A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010055615A1 (ja) * | 2008-11-12 | 2010-05-20 | 株式会社林商会 | 高純度シリコンおよび熱電変換材料 |
KR101178590B1 (ko) * | 2009-06-10 | 2012-08-30 | 한국세라믹기술원 | 실리콘 잉곳 제조 방법 |
CN102534203A (zh) * | 2011-12-31 | 2012-07-04 | 上海盛宝冶金科技有限公司 | 一种光伏硅合金球及其生产方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05270814A (ja) * | 1992-03-23 | 1993-10-19 | Kawasaki Steel Corp | 太陽電池用シリコンの製造方法 |
DE10056957C1 (de) * | 2000-11-17 | 2002-09-05 | Metallkraft As Kristiansand | Verfahren zum Herstellen nichtoxidischer Keramiken |
-
2007
- 2007-03-30 JP JP2007090890A patent/JP5108354B2/ja active Active
-
2008
- 2008-02-20 KR KR1020080015169A patent/KR20080089163A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20080089163A (ko) | 2008-10-06 |
JP2008247670A (ja) | 2008-10-16 |
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