JP5102618B2 - SiCOH誘電体膜を形成する方法 - Google Patents
SiCOH誘電体膜を形成する方法 Download PDFInfo
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- JP5102618B2 JP5102618B2 JP2007527209A JP2007527209A JP5102618B2 JP 5102618 B2 JP5102618 B2 JP 5102618B2 JP 2007527209 A JP2007527209 A JP 2007527209A JP 2007527209 A JP2007527209 A JP 2007527209A JP 5102618 B2 JP5102618 B2 JP 5102618B2
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- dielectric film
- sicoh
- film
- dielectric
- layer
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
を含む。
34:絶縁体材料層
36:第1金属領域
38:DUVレーザ処理SiCOH膜の第1の層
40:導電体層
44:DUVレーザ処理SiCOH膜の第2の層
62:誘電体キャップ層
72:誘電体キャップ層
74:誘電体キャップ層
80:電子装置
82:誘電体材料層
84:第2絶縁体材料層
86:第2絶縁体材料層
92:バイア
94:相互接続部
96:拡散障壁層
Claims (14)
- SiCOH誘電体膜を形成する方法であって、
少なくともSi、C、O及びH原子を含む第1前駆体、C、H及び随意的にO、F及びN原子を含む第2前駆体、並びに不活性キャリアを反応器に与えてSiCOH誘電体膜を形成する条件を用いて、基板の表面上に電子構造体の膜として働く、Si、C、O及びH原子を含むSiCOH誘電体膜を設けるステップと、
350nmを下回る波長を有する深紫外(DUV)レーザを0.1から5mJ/cm 2 パルスまでのフルエンスで前記SiCOH誘電体膜に照射して、該SiCOH誘電体膜からCを除去して該SiCOH誘電体膜中のC含有量を減少させる光化学反応を前記SiCOH誘電体膜内に起こさせて、前記DUVレーザによる処理をされていないSiCOH誘電体膜に比べて膜の絶縁特性を改善するステップと、
を含む方法。 - 前記基板が、半導体材料、絶縁体材料、導電体材料、又はこれらの多重層を含む組み合わせを含む、請求項1に記載の方法。
- 前記SiCOH誘電体膜を設ける前記ステップが、プラズマ増強化学気相堆積(PECVD)、高密度プラズマ(HDP)堆積及びパルスPECVDからなる群から選択された堆積プロセスを含む、請求項1に記載の方法。
- Geを含む第3前駆体を選択することをさらに含む、請求項1に記載の方法。
- 前記第1前駆体が、環構造を含む有機分子である、請求項1に記載の方法。
- 前記第1前駆体が、1,3,5,7−テトラメチルシクロテトラシロキサン(TMCTS)、オクタメチルシクロテトラシロキサン(OMCTS)、ジエトキシメチルシラン(DEMS)、ジメチルジメトキシシラン(DMDMOS)、又はジエチルメトキシシラン(DEDMOS)である、請求項5に記載の方法。
- 前記第2前駆体が炭化水素分子である、請求項1に記載の方法。
- 前記炭化水素分子が、オキサ二環式化合物又はエチレンである、請求項7に記載の方法。
- 前記第3前駆体がゲルマン水素化物である、請求項4に記載の方法。
- 前記SiCOH誘電体膜を設ける前記ステップが、第1前駆体として1,3,5,7−テトラメチルシクロテトラシロキサン(TMCTS)、第2前駆体としてエチレン又はシクロペンテン酸化物を選択し、PECVDにより前記第1及び第2前駆体を堆積することを含む、請求項1に記載の方法。
- 前記照射するステップの前の前記SiCOH誘電体膜が、2.8又はそれより小さい誘電率を有する、請求項1に記載の方法。
- 前記DUVレーザがエキシマレーザを含む、請求項1に記載の方法。
- 前記エキシマレーザが、193nmで動作するArFレーザ、248nmで動作するKrFレーザ、又は308nmで動作するXeFレーザである、請求項12に記載の方法。
- 前記照射するステップが、パルス又はラスタ走査モードを用いて実行される、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/923,247 | 2004-08-20 | ||
US10/923,247 US7223670B2 (en) | 2004-08-20 | 2004-08-20 | DUV laser annealing and stabilization of SiCOH films |
PCT/US2005/009112 WO2006022856A2 (en) | 2004-08-20 | 2005-03-17 | DUV LASER ANNEALING AND STABILIZATION OF SiCOH FILMS |
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JP2008511135A JP2008511135A (ja) | 2008-04-10 |
JP5102618B2 true JP5102618B2 (ja) | 2012-12-19 |
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JP2007527209A Expired - Fee Related JP5102618B2 (ja) | 2004-08-20 | 2005-03-17 | SiCOH誘電体膜を形成する方法 |
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US (3) | US7223670B2 (ja) |
EP (1) | EP1794781A4 (ja) |
JP (1) | JP5102618B2 (ja) |
KR (1) | KR101006329B1 (ja) |
CN (1) | CN101006559B (ja) |
TW (1) | TWI348191B (ja) |
WO (1) | WO2006022856A2 (ja) |
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-
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US10123906B2 (en) | 2002-01-18 | 2018-11-13 | Carl Zeiss Meditec Ag | Femtosescond laser system for the exact manipulation of material and tissues |
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JP2008511135A (ja) | 2008-04-10 |
EP1794781A4 (en) | 2010-10-20 |
US20060040513A1 (en) | 2006-02-23 |
US7560794B2 (en) | 2009-07-14 |
KR101006329B1 (ko) | 2011-01-06 |
CN101006559A (zh) | 2007-07-25 |
WO2006022856A2 (en) | 2006-03-02 |
CN101006559B (zh) | 2011-10-26 |
TWI348191B (en) | 2011-09-01 |
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