TWI348191B - Duv laser annealing and stabilization of sicoh films - Google Patents
Duv laser annealing and stabilization of sicoh filmsInfo
- Publication number
- TWI348191B TWI348191B TW094126266A TW94126266A TWI348191B TW I348191 B TWI348191 B TW I348191B TW 094126266 A TW094126266 A TW 094126266A TW 94126266 A TW94126266 A TW 94126266A TW I348191 B TWI348191 B TW I348191B
- Authority
- TW
- Taiwan
- Prior art keywords
- stabilization
- laser annealing
- duv laser
- sicoh films
- sicoh
- Prior art date
Links
- 238000005224 laser annealing Methods 0.000 title 1
- 230000006641 stabilisation Effects 0.000 title 1
- 238000011105 stabilization Methods 0.000 title 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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- Y10T428/00—Stock material or miscellaneous articles
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- Computer Hardware Design (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/923,247 US7223670B2 (en) | 2004-08-20 | 2004-08-20 | DUV laser annealing and stabilization of SiCOH films |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200618106A TW200618106A (en) | 2006-06-01 |
TWI348191B true TWI348191B (en) | 2011-09-01 |
Family
ID=35910180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094126266A TWI348191B (en) | 2004-08-20 | 2005-08-02 | Duv laser annealing and stabilization of sicoh films |
Country Status (7)
Country | Link |
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US (3) | US7223670B2 (zh) |
EP (1) | EP1794781A4 (zh) |
JP (1) | JP5102618B2 (zh) |
KR (1) | KR101006329B1 (zh) |
CN (1) | CN101006559B (zh) |
TW (1) | TWI348191B (zh) |
WO (1) | WO2006022856A2 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10202036A1 (de) | 2002-01-18 | 2003-07-31 | Zeiss Carl Meditec Ag | Femtosekunden Lasersystem zur präzisen Bearbeitung von Material und Gewebe |
JP4338495B2 (ja) * | 2002-10-30 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | シリコンオキシカーバイド、半導体装置、および半導体装置の製造方法 |
US7485570B2 (en) * | 2002-10-30 | 2009-02-03 | Fujitsu Limited | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device |
US20040253378A1 (en) * | 2003-06-12 | 2004-12-16 | Applied Materials, Inc. | Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes |
US20050008789A1 (en) * | 2003-06-26 | 2005-01-13 | Rafac Robert J. | Method and apparatus for stabilizing optical dielectric coatings |
US7223670B2 (en) * | 2004-08-20 | 2007-05-29 | International Business Machines Corporation | DUV laser annealing and stabilization of SiCOH films |
US7678682B2 (en) * | 2004-11-12 | 2010-03-16 | Axcelis Technologies, Inc. | Ultraviolet assisted pore sealing of porous low k dielectric films |
US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US20070210421A1 (en) * | 2006-03-13 | 2007-09-13 | Texas Instruments Inc. | Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer |
US8956457B2 (en) * | 2006-09-08 | 2015-02-17 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
US20090075491A1 (en) * | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
US7964442B2 (en) * | 2007-10-09 | 2011-06-21 | Applied Materials, Inc. | Methods to obtain low k dielectric barrier with superior etch resistivity |
US20090226695A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | Method for treating a dielectric film with infrared radiation |
US7858533B2 (en) * | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
US7977256B2 (en) | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
US20090226694A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
US8895942B2 (en) * | 2008-09-16 | 2014-11-25 | Tokyo Electron Limited | Dielectric treatment module using scanning IR radiation source |
US20100065758A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US8357432B2 (en) * | 2009-03-04 | 2013-01-22 | Xerox Corporation | Mixed solvent process for preparing structured organic films |
US20110232677A1 (en) * | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
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- 2005-03-17 EP EP05728347A patent/EP1794781A4/en not_active Withdrawn
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- 2005-03-17 KR KR1020077002340A patent/KR101006329B1/ko not_active IP Right Cessation
- 2005-03-17 JP JP2007527209A patent/JP5102618B2/ja not_active Expired - Fee Related
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TW200618106A (en) | 2006-06-01 |
CN101006559A (zh) | 2007-07-25 |
WO2006022856A3 (en) | 2007-01-11 |
US20070284698A1 (en) | 2007-12-13 |
US7560794B2 (en) | 2009-07-14 |
US7223670B2 (en) | 2007-05-29 |
CN101006559B (zh) | 2011-10-26 |
EP1794781A4 (en) | 2010-10-20 |
KR101006329B1 (ko) | 2011-01-06 |
WO2006022856A2 (en) | 2006-03-02 |
KR20070042990A (ko) | 2007-04-24 |
JP2008511135A (ja) | 2008-04-10 |
US20060040513A1 (en) | 2006-02-23 |
US7755159B2 (en) | 2010-07-13 |
JP5102618B2 (ja) | 2012-12-19 |
US20080230875A1 (en) | 2008-09-25 |
EP1794781A2 (en) | 2007-06-13 |
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