JP5100990B2 - 極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 - Google Patents
極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 Download PDFInfo
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- JP5100990B2 JP5100990B2 JP2005230619A JP2005230619A JP5100990B2 JP 5100990 B2 JP5100990 B2 JP 5100990B2 JP 2005230619 A JP2005230619 A JP 2005230619A JP 2005230619 A JP2005230619 A JP 2005230619A JP 5100990 B2 JP5100990 B2 JP 5100990B2
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- laser
- oscillation
- light source
- ultraviolet light
- extreme ultraviolet
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
- H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
- H01S3/1075—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect for optical deflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1103—Cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/2232—Carbon dioxide (CO2) or monoxide [CO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/235—Regenerative amplifiers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005230619A JP5100990B2 (ja) | 2004-10-07 | 2005-08-09 | 極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 |
| US11/242,016 US7680158B2 (en) | 2004-10-07 | 2005-10-04 | LPP type extreme ultra violet light source apparatus and driver laser for the same |
| US11/783,387 US7649188B2 (en) | 2004-10-07 | 2007-04-09 | LPP type extreme ultra violet light source apparatus and driver laser for the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004295272 | 2004-10-07 | ||
| JP2004295272 | 2004-10-07 | ||
| JP2005230619A JP5100990B2 (ja) | 2004-10-07 | 2005-08-09 | 極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011253149A Division JP5242758B2 (ja) | 2004-10-07 | 2011-11-18 | 極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006135298A JP2006135298A (ja) | 2006-05-25 |
| JP2006135298A5 JP2006135298A5 (enExample) | 2008-12-04 |
| JP5100990B2 true JP5100990B2 (ja) | 2012-12-19 |
Family
ID=36145268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005230619A Expired - Fee Related JP5100990B2 (ja) | 2004-10-07 | 2005-08-09 | 極端紫外光源装置用ドライバーレーザ及びlpp型極端紫外光源装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7680158B2 (enExample) |
| JP (1) | JP5100990B2 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7928416B2 (en) * | 2006-12-22 | 2011-04-19 | Cymer, Inc. | Laser produced plasma EUV light source |
| US7491954B2 (en) * | 2006-10-13 | 2009-02-17 | Cymer, Inc. | Drive laser delivery systems for EUV light source |
| US7439530B2 (en) * | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
| US7671349B2 (en) | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
| US7541121B2 (en) * | 2004-10-13 | 2009-06-02 | Infineon Technologies Ag | Calibration of optical line shortening measurements |
| US7369216B2 (en) * | 2004-10-15 | 2008-05-06 | Asml Netherlands B.V. | Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby |
| WO2007121142A2 (en) * | 2006-04-12 | 2007-10-25 | The Regents Of The University Of California | Improved light source employing laser-produced plasma |
| JP4679440B2 (ja) * | 2006-06-05 | 2011-04-27 | 川崎重工業株式会社 | 波長変換レーザ出力差周波分離装置 |
| JP5551722B2 (ja) * | 2006-08-29 | 2014-07-16 | ギガフォトン株式会社 | 極端紫外光源装置用ドライバーレーザ |
| JP5086677B2 (ja) * | 2006-08-29 | 2012-11-28 | ギガフォトン株式会社 | 極端紫外光源装置用ドライバーレーザ |
| JP5086664B2 (ja) * | 2007-03-02 | 2012-11-28 | ギガフォトン株式会社 | 極端紫外光源装置 |
| DE102007017212A1 (de) * | 2007-04-12 | 2008-10-16 | Forschungszentrum Jülich GmbH | Verfahren und Vorrichtung zur Kühlung eines Gases |
| JP5179776B2 (ja) * | 2007-04-20 | 2013-04-10 | ギガフォトン株式会社 | 極端紫外光源用ドライバレーザ |
| JP2009246345A (ja) * | 2008-03-12 | 2009-10-22 | Komatsu Ltd | レーザシステム |
| WO2009140270A2 (en) * | 2008-05-13 | 2009-11-19 | The Regents Of The University Of California | System and method for light source employing laser-produced plasma |
| JP5758569B2 (ja) * | 2008-06-12 | 2015-08-05 | ギガフォトン株式会社 | スラブ型レーザ装置 |
| JP5914742B2 (ja) * | 2008-09-19 | 2016-05-11 | ギガフォトン株式会社 | 極端紫外光源装置用レーザ光源装置、及びレーザ光源装置 |
| JP5833806B2 (ja) * | 2008-09-19 | 2015-12-16 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置用レーザ光源装置及び極端紫外光源装置用レーザ光源の調整方法 |
| JP5587578B2 (ja) * | 2008-09-26 | 2014-09-10 | ギガフォトン株式会社 | 極端紫外光源装置およびパルスレーザ装置 |
| JP5536401B2 (ja) | 2008-10-16 | 2014-07-02 | ギガフォトン株式会社 | レーザ装置および極端紫外光光源装置 |
| JP5607383B2 (ja) | 2009-02-23 | 2014-10-15 | ギガフォトン株式会社 | ガスレーザ装置用温度調節装置 |
| JP5675127B2 (ja) * | 2009-02-27 | 2015-02-25 | ギガフォトン株式会社 | レーザ装置および極端紫外光源装置 |
| JP5676204B2 (ja) * | 2009-10-23 | 2015-02-25 | 浜松ホトニクス株式会社 | プラズマシャッター形成装置および形成方法 |
| JP5419739B2 (ja) * | 2010-02-03 | 2014-02-19 | 三菱電機株式会社 | ガスレーザ装置 |
| KR101748461B1 (ko) | 2010-02-09 | 2017-06-16 | 에너제틱 테크놀로지 아이엔씨. | 레이저 구동 광원 |
| JP2011192961A (ja) * | 2010-02-19 | 2011-09-29 | Komatsu Ltd | レーザ装置、極端紫外光生成装置、およびメンテナンス方法 |
| JP5666285B2 (ja) | 2010-03-15 | 2015-02-12 | ギガフォトン株式会社 | 再生増幅器、レーザ装置および極端紫外光生成装置 |
| JP5075951B2 (ja) * | 2010-07-16 | 2012-11-21 | ギガフォトン株式会社 | 極端紫外光源装置及びドライバレーザシステム |
| JP6054028B2 (ja) | 2011-02-09 | 2016-12-27 | ギガフォトン株式会社 | レーザ装置および極端紫外光生成システム |
| DE102012002470A1 (de) * | 2012-02-03 | 2013-08-08 | Iai Industrial Systems B.V. | CO2-Laser mit schneller Leistungssteuerung |
| WO2014072149A2 (en) | 2012-11-07 | 2014-05-15 | Asml Netherlands B.V. | Method and apparatus for generating radiation |
| CA2966869A1 (en) | 2014-11-10 | 2016-05-19 | General Electric Company | Multi-phase fluid fraction measurement |
| US9711950B2 (en) * | 2015-05-13 | 2017-07-18 | Trumpf Laser Gmbh | Dense wavelength beam combining with variable feedback control |
| US20210391683A1 (en) * | 2018-10-10 | 2021-12-16 | Mitsubishi Electric Corporation | Laser device |
| NL2024513A (en) * | 2019-01-15 | 2020-08-14 | Asml Netherlands Bv | EUV radiation source and related methods |
| EP3968739A1 (en) * | 2020-09-09 | 2022-03-16 | Deutsches Elektronen-Synchrotron DESY | Apparatus and method for generating x-rays by laser irradiation of superfluid helium droplets |
| US11587781B2 (en) | 2021-05-24 | 2023-02-21 | Hamamatsu Photonics K.K. | Laser-driven light source with electrodeless ignition |
| CN113916855A (zh) * | 2021-09-29 | 2022-01-11 | 深圳大学 | 一种显微成像装置 |
| US12165856B2 (en) | 2022-02-21 | 2024-12-10 | Hamamatsu Photonics K.K. | Inductively coupled plasma light source |
| US12144072B2 (en) | 2022-03-29 | 2024-11-12 | Hamamatsu Photonics K.K. | All-optical laser-driven light source with electrodeless ignition |
| US12156322B2 (en) | 2022-12-08 | 2024-11-26 | Hamamatsu Photonics K.K. | Inductively coupled plasma light source with switched power supply |
| DE102024105833A1 (de) * | 2024-02-29 | 2025-09-04 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Vorrichtung zur Bereitstellung von Anregungsenergie für ein Target-Material zur Erzeugung von EUV-Strahlung, Anlage zur Erzeugung von EUV-Strahlung und Verfahren zum Betreiben einer Vorrichtung zur Bereitstellung von Anregungsenergie für ein Target-Material zur Erzeugung von EUV-Strahlung |
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| US4061921A (en) * | 1974-05-02 | 1977-12-06 | The United States Of America As Represented By The United States Energy Research & Development Administration | Infrared laser system |
| FR2331898A1 (fr) * | 1975-11-17 | 1977-06-10 | Comp Generale Electricite | Dispositif generateur laser emettant a une longueur d'onde voisine de 1,3 micron |
| US4330761A (en) * | 1976-06-28 | 1982-05-18 | Massachusetts Institute Of Technology | High power gas laser |
| JPS566491A (en) * | 1979-06-28 | 1981-01-23 | Agency Of Ind Science & Technol | Oscillating method of carbon dioxide gas laser in multi-line |
| US5327446A (en) * | 1993-03-26 | 1994-07-05 | The United States Of America As Represented By The Secretary Of The Department Of Health And Human Services | Method of exciting laser action and delivering laser energy for medical and scientific applications |
| US5452313A (en) * | 1994-03-21 | 1995-09-19 | Hughes Aircraft Company | Optical feedback eliminator |
| JPH0864896A (ja) * | 1994-08-24 | 1996-03-08 | Nippon Steel Corp | 高平均出力パルスco▲2▼レーザ装置 |
| US6016324A (en) * | 1994-08-24 | 2000-01-18 | Jmar Research, Inc. | Short pulse laser system |
| DE4432029C2 (de) * | 1994-09-08 | 1997-08-21 | Ldt Gmbh & Co | Lasergestützte Farbbildanzeige- und Projektionsvorrichtung |
| US5909306A (en) * | 1996-02-23 | 1999-06-01 | President And Fellows Of Harvard College | Solid-state spectrally-pure linearly-polarized pulsed fiber amplifier laser system useful for ultraviolet radiation generation |
| US6463086B1 (en) * | 1999-02-10 | 2002-10-08 | Lambda Physik Ag | Molecular fluorine laser with spectral linewidth of less than 1 pm |
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| US6529543B1 (en) * | 2000-11-21 | 2003-03-04 | The General Hospital Corporation | Apparatus for controlling laser penetration depth |
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| US6760356B2 (en) * | 2002-04-08 | 2004-07-06 | The Regents Of The University Of California | Application of Yb:YAG short pulse laser system |
| JP4535732B2 (ja) * | 2004-01-07 | 2010-09-01 | 株式会社小松製作所 | 光源装置及びそれを用いた露光装置 |
| US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| US7078717B2 (en) * | 2004-03-22 | 2006-07-18 | Gigaphoton Inc. | Light source device and exposure equipment using the same |
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2005
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| US20060078017A1 (en) | 2006-04-13 |
| JP2006135298A (ja) | 2006-05-25 |
| US7649188B2 (en) | 2010-01-19 |
| US20070187628A1 (en) | 2007-08-16 |
| US7680158B2 (en) | 2010-03-16 |
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