JP5100882B2 - 発光装置の作製方法 - Google Patents
発光装置の作製方法 Download PDFInfo
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- JP5100882B2 JP5100882B2 JP2011248206A JP2011248206A JP5100882B2 JP 5100882 B2 JP5100882 B2 JP 5100882B2 JP 2011248206 A JP2011248206 A JP 2011248206A JP 2011248206 A JP2011248206 A JP 2011248206A JP 5100882 B2 JP5100882 B2 JP 5100882B2
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
例えば、真空蒸着法、スパッタ法、スピンコート法、ロールコート法、キャスト法、LB法、イオンプレーティング法、ディッピング法、インクジェット法、印刷法などが挙げられる。中でも印刷法は、選択的にEL層を形成することができるため有効な手法である。
なお、具体的には蒸着室209内の成膜部210において、EL素子の陰極となる導電膜としてMgAgやAl−Li合金膜(アルミニウムとリチウムとの合金膜)といった膜を成膜することができる。
を添加しやすい利点を有している。
なお、印刷室(A)905はゲート900bを介して搬送室901に連結される。また、印刷室(A)905は、窒素や不活性気体もしくは、EL形成物に含まれる溶媒雰囲気にし、さらに印刷室内は、大気圧状態もしくは、それに近い状態(典型的には、1〜2気圧、好ましくは、1.1〜1.5気圧)に保持しておけばよい。なお、圧力調節は、圧力調節機構919aにより行う。また、印刷室(A)内を溶媒雰囲気にする場合には、溶媒トレー920aに溶媒を備えておく。
であり、本体1331、記録媒体(DVD等)1332、操作スイッチ1333、表示部(a)1334、表示部(b)1335等を含む。表示部(a)1334は主として画像情報を表示し、表示部(b)1335は主として文字情報を表示するが、本発明の発光装置はこれら表示部(a)1334、表示部(b)1335にて用いることができる。なお、記録媒体を備えた画像再生装置には家庭用ゲーム機器なども含まれる。
導入される。また、センサー1208は、排気用バルブ1209と接続されており、印刷室1201内部の圧力に応じて、排気用バルブ1209の開閉を制御する。なお、センサー1208は、圧力計を有しており、仕様は0〜1.3MPaとする。具体的には、印刷室1201内部の圧力が所望の圧力よりも低いときは、排気用バルブ1209を閉じ、所望の圧力よりも高いときは、排気用バルブ1209を開けることにより、印刷室1201内の気体を矢印bの方向に排気して、印刷室1201内の圧力を調節する。
Claims (6)
- 処理室内を大気圧より高い圧力とした状態において、第1のロールと第2のロールとを回転し、前記第1のロールの表面に保持されたEL形成物を、前記第2のロール上の複数の凸部に塗布し、
前記処理室内を大気圧より高い圧力とした状態において、前記第2のロールを回転することにより、前記第2のロール上の前記複数の凸部に塗布された前記EL形成物を基板上に印刷し、
前記処理室内の圧力はセンサーにより測定されることを特徴とする発光装置の作製方法。 - 処理室内を大気圧より高い圧力とした状態において、第1のロールと第2のロールとを回転し、前記第1のロールの表面に保持されたEL形成物を、前記第2のロール上の複数の凸部に塗布し、
前記処理室内を大気圧より高い圧力とした状態において、前記第2のロールを回転することにより、前記第2のロール上の前記複数の凸部に塗布された前記EL形成物を基板上に印刷し、
前記処理室内の圧力はセンサーにより測定され、測定された圧力に応じて前記処理室の排気用バルブの開閉を制御して、前記処理室内の圧力を調節することを特徴とする発光装置の作製方法。 - 第1のロールと第2のロールとを回転し、前記第1のロールの表面に保持されたEL形成物を、前記第2のロール上の複数の凸部に塗布し、
前記第2のロールを回転することにより、前記第2のロール上の前記複数の凸部に塗布された前記EL形成物を基板上に印刷し、
前記EL形成物の印刷は、処理室内を大気圧より高い圧力とした状態において行われ、
前記処理室内の圧力はセンサーにより測定され、測定された圧力に応じて前記処理室をヒーターにより加熱することにより、前記処理室内の圧力を調節することを特徴とする発光装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記第1のロール表面にはメッシュ状の溝が設けられていることを特徴とする発光装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記第2のロールの前記複数の凸部のみが前記第1のロールと接触することにより、前記EL形成物を前記第2のロールの前記複数の凸部に塗布することを特徴とする発光装置の作製方法。 - 請求項1乃至請求項5のいずれか一項において、
前記EL形成物は、EL材料と溶媒との混合物であり、前記EL材料は有機化合物であることを特徴とする発光装置の作製方法。
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-
2001
- 2001-07-05 TW TW090116474A patent/TW577813B/zh not_active IP Right Cessation
- 2001-07-05 US US09/898,067 patent/US6940223B2/en not_active Expired - Lifetime
- 2001-07-10 KR KR1020010041098A patent/KR100865543B1/ko not_active IP Right Cessation
-
2005
- 2005-07-28 US US11/190,883 patent/US20050257741A1/en not_active Abandoned
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2009
- 2009-10-05 US US12/573,357 patent/US8056501B2/en not_active Expired - Fee Related
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2011
- 2011-11-14 US US13/295,200 patent/US8647706B2/en not_active Expired - Fee Related
- 2011-11-14 JP JP2011248206A patent/JP5100882B2/ja not_active Expired - Fee Related
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2012
- 2012-02-15 JP JP2012030055A patent/JP2012094550A/ja not_active Withdrawn
- 2012-06-20 JP JP2012138466A patent/JP5560300B2/ja not_active Expired - Fee Related
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KR20020005511A (ko) | 2002-01-17 |
JP5560300B2 (ja) | 2014-07-23 |
TW577813B (en) | 2004-03-01 |
JP2012094550A (ja) | 2012-05-17 |
US8647706B2 (en) | 2014-02-11 |
US20020003397A1 (en) | 2002-01-10 |
JP2012199250A (ja) | 2012-10-18 |
US20120058251A1 (en) | 2012-03-08 |
JP2012033506A (ja) | 2012-02-16 |
US8056501B2 (en) | 2011-11-15 |
US20050257741A1 (en) | 2005-11-24 |
US6940223B2 (en) | 2005-09-06 |
KR100865543B1 (ko) | 2008-10-29 |
US20100018457A1 (en) | 2010-01-28 |
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