JP5095244B2 - マイクロマシン、およびその作製方法 - Google Patents

マイクロマシン、およびその作製方法 Download PDF

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Publication number
JP5095244B2
JP5095244B2 JP2007062846A JP2007062846A JP5095244B2 JP 5095244 B2 JP5095244 B2 JP 5095244B2 JP 2007062846 A JP2007062846 A JP 2007062846A JP 2007062846 A JP2007062846 A JP 2007062846A JP 5095244 B2 JP5095244 B2 JP 5095244B2
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layer
conductive layer
conductive
gate electrode
semiconductor
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Japanese (ja)
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JP2007283480A5 (enExample
JP2007283480A (ja
Inventor
真弓 山口
小波 泉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Recrystallisation Techniques (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
JP2007062846A 2006-03-20 2007-03-13 マイクロマシン、およびその作製方法 Expired - Fee Related JP5095244B2 (ja)

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JP2007062846A JP5095244B2 (ja) 2006-03-20 2007-03-13 マイクロマシン、およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006076728 2006-03-20
JP2006076728 2006-03-20
JP2007062846A JP5095244B2 (ja) 2006-03-20 2007-03-13 マイクロマシン、およびその作製方法

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JP2007283480A JP2007283480A (ja) 2007-11-01
JP2007283480A5 JP2007283480A5 (enExample) 2010-04-15
JP5095244B2 true JP5095244B2 (ja) 2012-12-12

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642114B2 (en) 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
KR101408475B1 (ko) 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
JP5516904B2 (ja) * 2011-11-11 2014-06-11 セイコーエプソン株式会社 半導体装置の製造方法
JP5516903B2 (ja) * 2011-11-11 2014-06-11 セイコーエプソン株式会社 半導体装置の製造方法
CN103777468B (zh) 2012-10-23 2016-06-15 无锡华润上华半导体有限公司 基于高台阶斜坡的光刻方法及系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2791858B2 (ja) * 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH0864828A (ja) * 1994-08-24 1996-03-08 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
US5550090A (en) * 1995-09-05 1996-08-27 Motorola Inc. Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures
JPH09246569A (ja) * 1996-03-04 1997-09-19 Toyota Motor Corp シリコン構造体の製造方法とシリコン構造体およびシリコン構造体を備えた加速度センサ

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