JP5090929B2 - 高性能ｍｅｍｓ実装アーキテクチャ - Google Patents

高性能ｍｅｍｓ実装アーキテクチャ Download PDF

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Publication number
JP5090929B2
JP5090929B2 JP2007552187A JP2007552187A JP5090929B2 JP 5090929 B2 JP5090929 B2 JP 5090929B2 JP 2007552187 A JP2007552187 A JP 2007552187A JP 2007552187 A JP2007552187 A JP 2007552187A JP 5090929 B2 JP5090929 B2 JP 5090929B2
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Japanese (ja)
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JP2008528968A5 (https=
JP2008528968A (ja
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ラフォンド，ピーター・エイチ
リャンチョン，ユ
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Honeywell International Inc
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Honeywell International Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Gyroscopes (AREA)
JP2007552187A 2005-01-21 2006-01-12 高性能ｍｅｍｓ実装アーキテクチャ Expired - Fee Related JP5090929B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/040,208 US7238999B2 (en) 2005-01-21 2005-01-21 High performance MEMS packaging architecture
US11/040,208 2005-01-21
PCT/US2006/001276 WO2006078564A1 (en) 2005-01-21 2006-01-12 High performance mems packaging archetecture

Publications (3)

Publication Number Publication Date
JP2008528968A JP2008528968A (ja) 2008-07-31
JP2008528968A5 JP2008528968A5 (https=) 2012-03-29
JP5090929B2 true JP5090929B2 (ja) 2012-12-05

Family

ID=36297244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552187A Expired - Fee Related JP5090929B2 (ja) 2005-01-21 2006-01-12 高性能ｍｅｍｓ実装アーキテクチャ

Country Status (4)

Country Link
US (1) US7238999B2 (https=)
EP (1) EP1853928A1 (https=)
JP (1) JP5090929B2 (https=)
WO (1) WO2006078564A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656079B2 (en) 2021-02-26 2023-05-23 Kabushiki Kaisha Toshiba Sensor and electronic device

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US7690255B2 (en) * 2006-08-31 2010-04-06 Evigia Systems, Inc. Three-axis inertial sensor and method of forming
CN100492016C (zh) * 2006-11-17 2009-05-27 中国科学院上海微系统与信息技术研究所 微机械电容式加速度传感器及制作方法
US7531443B2 (en) * 2006-12-08 2009-05-12 Micron Technology, Inc. Method and system for fabricating semiconductor components with through interconnects and back side redistribution conductors
US20090085194A1 (en) * 2007-09-28 2009-04-02 Honeywell International Inc. Wafer level packaged mems device
US7971483B2 (en) * 2008-03-28 2011-07-05 Honeywell International Inc. Systems and methods for acceleration and rotational determination from an out-of-plane MEMS device
US7984648B2 (en) * 2008-04-10 2011-07-26 Honeywell International Inc. Systems and methods for acceleration and rotational determination from an in-plane and out-of-plane MEMS device
JP5062146B2 (ja) * 2008-11-21 2012-10-31 大日本印刷株式会社 物理量センサおよびその製造方法、ならびに電子機器
JP4924663B2 (ja) * 2008-12-25 2012-04-25 株式会社デンソー 半導体装置およびその製造方法
JPWO2010104064A1 (ja) * 2009-03-13 2012-09-13 アルプス電気株式会社 Ｍｅｍｓセンサ
US8215169B2 (en) * 2009-03-26 2012-07-10 Honeywell International Inc. Using pole pieces to guide magnetic flux through a MEMS device and method of making
US8115573B2 (en) * 2009-05-29 2012-02-14 Infineon Technologies Ag Resonance frequency tunable MEMS device
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US8569090B2 (en) * 2010-12-03 2013-10-29 Babak Taheri Wafer level structures and methods for fabricating and packaging MEMS
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US20130001710A1 (en) * 2011-06-29 2013-01-03 Invensense, Inc. Process for a sealed mems device with a portion exposed to the environment
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Publication number Priority date Publication date Assignee Title
US11656079B2 (en) 2021-02-26 2023-05-23 Kabushiki Kaisha Toshiba Sensor and electronic device

Also Published As

Publication number Publication date
US7238999B2 (en) 2007-07-03
EP1853928A1 (en) 2007-11-14
WO2006078564A1 (en) 2006-07-27
JP2008528968A (ja) 2008-07-31
US20060163679A1 (en) 2006-07-27

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