JP5090120B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP5090120B2 JP5090120B2 JP2007256633A JP2007256633A JP5090120B2 JP 5090120 B2 JP5090120 B2 JP 5090120B2 JP 2007256633 A JP2007256633 A JP 2007256633A JP 2007256633 A JP2007256633 A JP 2007256633A JP 5090120 B2 JP5090120 B2 JP 5090120B2
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- solid
- state imaging
- imaging device
- protection circuit
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- 238000003384 imaging method Methods 0.000 title claims description 75
- 238000009792 diffusion process Methods 0.000 claims description 30
- 125000006850 spacer group Chemical group 0.000 claims description 26
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 56
- 239000000758 substrate Substances 0.000 description 16
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000005380 borophosphosilicate glass Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 boron ions Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
4…透明板、5…スペーサ、5A…端面、6…パッド、7…接着剤、10,10A,10B…ESD保護回路、11…pウェル層、12,13…拡散層、14…絶縁膜、15…配線、16…グランド配線、17,17A…SiN膜、18…CCD表層樹脂、19…BPSG膜、20…チャンネルストッパー
Claims (2)
- 固体撮像素子が形成された固体撮像素子ウェーハと光透過性保護部材とが、前記固体撮像素子を取り囲むように配置されるスペーサを介して接着剤により接合された固体撮像装置において、
前記固体撮像素子ウェーハに形成され前記スペーサの下部に位置する静電気保護回路の拡散層部間のウェル層へチャンネルストッパーを設けたことを特徴とする固体撮像装置。 - 固体撮像素子が形成された固体撮像素子ウェーハと、光透過性保護部材とが、前記固体撮像素子を取り囲むように配置されるスペーサを介して接着剤により接合された固体撮像装置において、
前記固体撮像素子ウェーハに形成され前記スペーサの下部に位置する静電気保護回路の拡散層部間のウェル層と、前記スペーサとの間に位置する窒化シリコンからなる膜の厚みが4000オングストロームから15000オングストロームであることを特徴とする固体撮像装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007256633A JP5090120B2 (ja) | 2006-09-28 | 2007-09-28 | 固体撮像装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006265497 | 2006-09-28 | ||
JP2006265497 | 2006-09-28 | ||
JP2007256633A JP5090120B2 (ja) | 2006-09-28 | 2007-09-28 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008109130A JP2008109130A (ja) | 2008-05-08 |
JP5090120B2 true JP5090120B2 (ja) | 2012-12-05 |
Family
ID=39442184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007256633A Active JP5090120B2 (ja) | 2006-09-28 | 2007-09-28 | 固体撮像装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5090120B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001351997A (ja) * | 2000-06-09 | 2001-12-21 | Canon Inc | 受光センサーの実装構造体およびその使用方法 |
JP2004311593A (ja) * | 2003-04-03 | 2004-11-04 | Sharp Corp | 電磁波検出器およびアクティブマトリクス基板 |
JP4451182B2 (ja) * | 2004-03-26 | 2010-04-14 | 富士フイルム株式会社 | 固体撮像装置 |
JP4476764B2 (ja) * | 2004-03-26 | 2010-06-09 | 富士フイルム株式会社 | 基板接合装置及び方法 |
KR100665217B1 (ko) * | 2005-07-05 | 2007-01-09 | 삼성전기주식회사 | 반도체 멀티칩 패키지 |
-
2007
- 2007-09-28 JP JP2007256633A patent/JP5090120B2/ja active Active
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JP2008109130A (ja) | 2008-05-08 |
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