JP5084169B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5084169B2
JP5084169B2 JP2006122941A JP2006122941A JP5084169B2 JP 5084169 B2 JP5084169 B2 JP 5084169B2 JP 2006122941 A JP2006122941 A JP 2006122941A JP 2006122941 A JP2006122941 A JP 2006122941A JP 5084169 B2 JP5084169 B2 JP 5084169B2
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Prior art keywords
film
insulating film
semiconductor
plasma treatment
semiconductor device
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JP2006122941A
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Japanese (ja)
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JP2006332634A5 (enExample
JP2006332634A (ja
Inventor
敦生 磯部
智史 村上
圭恵 高野
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006122941A priority Critical patent/JP5084169B2/ja
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Publication of JP2006332634A5 publication Critical patent/JP2006332634A5/ja
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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2006122941A 2005-04-28 2006-04-27 半導体装置の作製方法 Expired - Fee Related JP5084169B2 (ja)

Priority Applications (1)

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JP2006122941A JP5084169B2 (ja) 2005-04-28 2006-04-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133680 2005-04-28
JP2005133680 2005-04-28
JP2006122941A JP5084169B2 (ja) 2005-04-28 2006-04-27 半導体装置の作製方法

Publications (3)

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JP2006332634A JP2006332634A (ja) 2006-12-07
JP2006332634A5 JP2006332634A5 (enExample) 2009-03-05
JP5084169B2 true JP5084169B2 (ja) 2012-11-28

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JP2006122941A Expired - Fee Related JP5084169B2 (ja) 2005-04-28 2006-04-27 半導体装置の作製方法

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332172A (ja) * 2005-05-24 2006-12-07 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5105915B2 (ja) * 2007-03-15 2012-12-26 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7678668B2 (en) * 2007-07-04 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
TWI437696B (zh) * 2007-09-21 2014-05-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5506172B2 (ja) * 2007-10-10 2014-05-28 株式会社半導体エネルギー研究所 半導体基板の作製方法
US7855153B2 (en) 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8497196B2 (en) * 2009-10-04 2013-07-30 Tokyo Electron Limited Semiconductor device, method for fabricating the same and apparatus for fabricating the same
KR20260030834A (ko) 2010-02-05 2026-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8704230B2 (en) * 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9401396B2 (en) 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
CN102646595A (zh) * 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
JP6827270B2 (ja) * 2016-03-28 2021-02-10 株式会社ジャパンディスプレイ 半導体装置の作製方法
WO2019022826A1 (en) * 2017-07-24 2019-01-31 Applied Materials, Inc. PRETREATMENT APPARATUS FOR IMPROVING THE CONTINUITY OF ULTRA-THIN AMORPHOUS SILICON FILM ON SILICON OXIDE

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314698A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
KR20060118620A (ko) * 2001-12-26 2006-11-23 동경 엘렉트론 주식회사 기판 처리 방법 및 반도체 장치의 제조 방법
JP2004343031A (ja) * 2002-12-03 2004-12-02 Advanced Lcd Technologies Development Center Co Ltd 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

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JP2006332634A (ja) 2006-12-07

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