JP5069113B2 - プラズマ・アーク被覆システム - Google Patents
プラズマ・アーク被覆システム Download PDFInfo
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- JP5069113B2 JP5069113B2 JP2007524782A JP2007524782A JP5069113B2 JP 5069113 B2 JP5069113 B2 JP 5069113B2 JP 2007524782 A JP2007524782 A JP 2007524782A JP 2007524782 A JP2007524782 A JP 2007524782A JP 5069113 B2 JP5069113 B2 JP 5069113B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
Description
Claims (14)
- 下地を被覆するための装置であって、
1つのプラズマ・アーク配列と、
前記プラズマ・アーク配列の上流に位置する複数の第1試薬マニホルドと、前記プラズマ・アーク配列の下流に位置する複数の第2試薬マニホルドにして、各マニホルドは少なくとも1つの開口を有し、前記開口を通って試薬が、それぞれのプラズマ・アークから出されるプラズマ・ジェットの中に向って放出される両マニホルドと、
前記下地の輪郭と前記プラズマ・アーク及び前記両マニホルドに対する下地の位置に従って、各マニホルドへの試薬の流れを調整する制御装置と
を含む装置。 - 第2プラズマ・アーク配列と、前記第2プラズマ・アーク配列の上流に位置する複数の第3試薬マニホルドと、前記第2プラズマ・アーク配列の下流に位置する複数の第4試薬マニホルドとを更に含み、複数の第3試薬マニホルドと複数の第4試薬マニホルドの各々が、少なくとも1つの開口を有し、前記開口を通って試薬が、前記下地の対向する表面に向けられたそれぞれのプラズマ・アークから出るプラズマ・ジェットの中に向って、前記制御装置の指図の下で放出される、請求項1に記載の装置。
- 前記下地が、前記下地の縁部の実質的な部分を囲む間隔材と共に進む、請求項1に記載の装置。
- 真空室を更に含み、前記マニホルドは前記真空室の中に位置する、請求項1に記載の装置。
- 各マニホルドに付属する弁を更に含み、前記制御装置は、個別のマニホルドへの試薬の流れを、それぞれの弁の動作を制御することによって調整する、請求項1に記載の装置。
- 前記両マニホルドへ試薬を供給する少なくとも1つのリザーバを更に含む、請求項1に記載の装置。
- 前記両マニホルドから逸れた試薬を受け入れる少なくとも1つの凝縮容器を更に含む、請求項1に記載の装置。
- 前記凝縮容器が前記試薬を凝縮する、請求項7に記載の装置。
- 試薬によって下地を被覆する方法であって、
プラズマ・アーク配列の上流に位置する複数の第1試薬マニホルドから試薬を放出する工程と、
前記プラズマ・アーク配列の下流に位置する複数の第2試薬マニホルドから試薬を放出する工程にして、
前記第1及び第2の複数の試薬マニホルドの各マニホルドは、少なくとも1つの開口を有し、前記開口を通って試薬が、それぞれのプラズマ・アークから出るプラズマ・ジェットの中に向って放出される工程と、
前記下地の輪郭と前記プラズマ・アーク及び前記両マニホルドに対する前記下地の位置に従って、制御装置により各マニホルドへの試薬の流れを調整する工程と
を含む方法。 - 第2プラズマ・アーク配列の上流に位置する複数の第3試薬マニホルドから試薬を放出する工程と、前記第2プラズマ・アーク配列の下流に位置する複数の第4試薬マニホルドから試薬を放出する工程とを更に含み、前記複数の第3試薬マニホルドと複数の第4試薬マニホルドは、少なくとも1つの開口を有し、前記開口を通って試薬が、前記下地の対向する表面に向けられたそれぞれのプラズマ・アークから出るプラズマ・ジェットの中に向って、前記制御装置の指図の下で放出される、請求項9に記載の方法。
- 前記調整工程が、各マニホルドに付属する弁の動作を制御する工程を含む、請求項9に記載の方法。
- 少なくとも1つのリザーバから前記各マニホルドに試薬を供給する工程を更に含む、請求項9に記載の方法。
- 凝縮容器が前記各マニホルドから逸れた試薬を受け入れる、請求項9に記載の方法。
- 前記凝縮容器が前記試薬を凝縮する、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/910,143 | 2004-08-03 | ||
US10/910,143 US7521653B2 (en) | 2004-08-03 | 2004-08-03 | Plasma arc coating system |
PCT/US2004/035572 WO2006022778A2 (en) | 2004-08-03 | 2004-10-27 | Plasma arc coating system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011026767A Division JP5436472B2 (ja) | 2004-08-03 | 2011-02-10 | 加熱装置、加熱システムおよび方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008509283A JP2008509283A (ja) | 2008-03-27 |
JP5069113B2 true JP5069113B2 (ja) | 2012-11-07 |
Family
ID=34979990
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007524782A Active JP5069113B2 (ja) | 2004-08-03 | 2004-10-27 | プラズマ・アーク被覆システム |
JP2011026767A Expired - Fee Related JP5436472B2 (ja) | 2004-08-03 | 2011-02-10 | 加熱装置、加熱システムおよび方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011026767A Expired - Fee Related JP5436472B2 (ja) | 2004-08-03 | 2011-02-10 | 加熱装置、加熱システムおよび方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7521653B2 (ja) |
EP (2) | EP2048264A1 (ja) |
JP (2) | JP5069113B2 (ja) |
KR (1) | KR101181179B1 (ja) |
CN (1) | CN101218372A (ja) |
DE (1) | DE602004019153D1 (ja) |
WO (1) | WO2006022778A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US7521653B2 (en) * | 2004-08-03 | 2009-04-21 | Exatec Llc | Plasma arc coating system |
CN101198463A (zh) * | 2005-02-23 | 2008-06-11 | 埃克阿泰克有限责任公司 | 具有均匀耐候特性的塑料板 |
KR101482805B1 (ko) | 2006-12-28 | 2015-01-14 | 엑사테크 엘.엘.씨. | 플라즈마 아크 코팅용 장치와 방법 |
KR101588174B1 (ko) * | 2007-05-17 | 2016-01-27 | 엑사테크 엘.엘.씨. | 공통 플라즈마 코팅 구역에서 복수의 코팅 재료를 침착시키기 위한 장치 및 방법 |
US20110054029A1 (en) * | 2009-06-26 | 2011-03-03 | Kuhrts Eric H | Water-soluble dietary fatty acids |
JP2011144412A (ja) * | 2010-01-13 | 2011-07-28 | Honda Motor Co Ltd | プラズマ成膜装置 |
EP2697295B1 (en) | 2011-04-14 | 2018-12-19 | Exatec, LLC. | Organic resin laminate |
CN103337457B (zh) * | 2013-05-29 | 2016-05-25 | 京东方科技集团股份有限公司 | 退火装置和退火工艺 |
US9631981B2 (en) * | 2013-09-30 | 2017-04-25 | Electronics And Telecommunications Research Institute | Apparatus and method for measuring thermoelectric device |
EP3212696B1 (en) | 2014-10-29 | 2018-10-24 | PPG Industries Ohio, Inc. | Protective coating system for plastic substrate |
US11812540B1 (en) * | 2019-09-30 | 2023-11-07 | Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville | Continuous large area cold atmospheric pressure plasma sheet source |
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US7521653B2 (en) * | 2004-08-03 | 2009-04-21 | Exatec Llc | Plasma arc coating system |
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KR101482805B1 (ko) | 2006-12-28 | 2015-01-14 | 엑사테크 엘.엘.씨. | 플라즈마 아크 코팅용 장치와 방법 |
KR101588174B1 (ko) * | 2007-05-17 | 2016-01-27 | 엑사테크 엘.엘.씨. | 공통 플라즈마 코팅 구역에서 복수의 코팅 재료를 침착시키기 위한 장치 및 방법 |
-
2004
- 2004-08-03 US US10/910,143 patent/US7521653B2/en active Active
- 2004-10-27 EP EP08171393A patent/EP2048264A1/en not_active Withdrawn
- 2004-10-27 JP JP2007524782A patent/JP5069113B2/ja active Active
- 2004-10-27 CN CNA2004800437342A patent/CN101218372A/zh active Pending
- 2004-10-27 DE DE602004019153T patent/DE602004019153D1/de active Active
- 2004-10-27 EP EP04796493A patent/EP1781837B1/en active Active
- 2004-10-27 WO PCT/US2004/035572 patent/WO2006022778A2/en active Application Filing
- 2004-10-27 KR KR1020077004972A patent/KR101181179B1/ko active IP Right Grant
-
2009
- 2009-03-18 US US12/406,166 patent/US8049144B2/en not_active Expired - Fee Related
-
2011
- 2011-02-10 JP JP2011026767A patent/JP5436472B2/ja not_active Expired - Fee Related
- 2011-03-15 US US13/048,218 patent/US8203103B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101218372A (zh) | 2008-07-09 |
JP2011137237A (ja) | 2011-07-14 |
US20110165333A1 (en) | 2011-07-07 |
DE602004019153D1 (de) | 2009-03-05 |
WO2006022778A3 (en) | 2007-09-20 |
EP2048264A1 (en) | 2009-04-15 |
JP5436472B2 (ja) | 2014-03-05 |
EP1781837A2 (en) | 2007-05-09 |
EP1781837B1 (en) | 2009-01-14 |
US8203103B2 (en) | 2012-06-19 |
US8049144B2 (en) | 2011-11-01 |
KR101181179B1 (ko) | 2012-09-18 |
KR20070048224A (ko) | 2007-05-08 |
US7521653B2 (en) | 2009-04-21 |
US20060029746A1 (en) | 2006-02-09 |
US20090181186A1 (en) | 2009-07-16 |
JP2008509283A (ja) | 2008-03-27 |
WO2006022778A2 (en) | 2006-03-02 |
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