JP5063103B2 - Substrate processing apparatus, substrate processing method, program, and recording medium - Google Patents

Description

  The present invention executes a substrate processing apparatus, a substrate processing method, and a substrate processing method for processing a substrate to be processed by selectively immersing the substrate to be processed in either the first chemical solution or the second chemical solution. In particular, the processing performance for the substrate to be processed when each chemical solution is used by changing the processing method for the substrate to be processed for each chemical solution. The present invention relates to a substrate processing apparatus, a substrate processing method, a program, and a recording medium.

  Conventionally, a substrate to be processed such as a semiconductor wafer or a glass substrate has been widely processed by immersing it in a processing solution (see, for example, Patent Documents 1 and 2).

Patent Document 1 discloses a method of processing a substrate to be processed while changing the supply direction of a chemical solution into the processing tank for the purpose of ensuring the uniformity of processing in the plate surface of the substrate to be processed. ing. Moreover, in the processing method of the to-be-processed substrate disclosed by the cited reference 2, the density | concentration and temperature of the chemical | medical solution supplied in a processing tank are set for the purpose of ensuring the uniformity of the process in the plate surface of a to-be-processed substrate. Strictly managed.
JP 2001-274133 A JP2002-100605

  However, as a result of extensive research conducted by the present inventors, it is possible to ensure a certain degree of uniformity of processing within the plate surface of the substrate to be processed by a known method depending on the type of chemical used in the processing. It has been found that the uniformity of processing within the plate surface of the substrate to be processed is significantly reduced when this chemical solution is used.

  Furthermore, recently, in a single processing tank, a plurality of types of chemical solutions having different reactivity with a substrate to be processed are selectively used. Specifically, one chemical solution is selected from a plurality of chemical solutions according to processing conditions. It is demanded to process the substrate to be processed by selecting and immersing the substrate to be processed in the chemical solution. That is, for a chemical solution that is highly reactive with the substrate to be processed, the flow rate of the processing liquid in the vicinity of the plate surface of the substrate to be processed, for example, the flow rate, is ensured in order to ensure the uniformity of processing within the plate surface of the substrate to be processed. On the other hand, it is necessary for the chemical solution having low reactivity to the substrate to be processed to be processed if the concentration of the processing solution in the vicinity of the plate surface of the substrate to be processed is uniform. Therefore, it is desirable to increase the supply amount of the chemical solution to the treatment tank and store the chemical solution in the treatment tank in a short time. In this way, by selectively using a plurality of types of chemical solutions having different reactivity with the substrate to be processed in a single processing tank, compared to a case where a plurality of processing tanks are provided corresponding to each chemical liquid. The entire equipment can be made compact.

  The present invention has been made in consideration of the above points, and each processing for a substrate to be processed in the case of using each chemical solution by making a processing method for the substrate to be processed different for a plurality of chemical solutions. It is an object of the present invention to provide a substrate processing apparatus, a substrate processing method, a program for executing the substrate processing method, and a recording medium on which the program is recorded.

  As a result of intensive research, the present inventors have conducted processing using a processing solution having a significantly high reactivity with the substrate to be processed, for example, when etching a silicon wafer using ammonia water, The progress of the processing on the plate surface of the substrate can be influenced not only by the concentration of the processing liquid in the vicinity of the plate surface of the substrate to be processed, but also by the flow of the processing liquid in the vicinity of the plate surface of the substrate to be processed, for example, the flow velocity. I got the knowledge. As will be described below, the present case is to solve the above-described problems based on such knowledge.

A substrate processing apparatus according to the present invention is a substrate processing apparatus for processing a substrate to be processed by selectively immersing the substrate to be processed in either a first chemical solution or a second chemical solution. And a processing tank including a first region for containing the second region and a second region disposed below the first region, and the second region provided in the processing tank and separating the first region and the second region. A rectifying member that rectifies the liquid sent from the region to the first region, a first supply unit that supplies a second chemical to the first region, and a first chemical or a second chemical to the second region And a control mechanism for controlling each of the first supply unit and the second supply unit, wherein the first chemical solution or the second supply unit is selectively supplied to the substrate to be processed. Setting section for setting which of chemicals is used for processing And a control mechanism that adjusts the type of liquid supplied from each supply unit to each region based on the setting content in the setting unit, and the control mechanism is set in the setting unit When the type of the chemical liquid is the first chemical liquid, the first chemical liquid is supplied to the second region with respect to the processing tank in which the processing liquid is stored and the substrate to be processed is stored, and the rectifying member The first chemical solution is caused to flow from the second region to the first region via the first region, and the substrate to be processed is formed in the first region while forming an upward flow of the first chemical solution in the first region. On the other hand, when the type of the chemical liquid set in the setting unit is the second chemical liquid, the processing tank stores the processing liquid and accommodates the substrate to be processed. The first area or the first area and the previous area To process by the second liquid chemical to the target substrate by supplying a second liquid chemical in both the second region being adapted to control the first supply and the second supply unit The reactivity between the first chemical solution and the substrate to be processed is higher than the reactivity between the second chemical solution and the substrate to be processed.

  According to such a substrate processing apparatus, by changing the processing method according to the type of the chemical solution, when the first chemical solution is used, a substantially uniform upward flow (rectification) is formed around the substrate to be processed. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the substrate to be processed along the direction corresponding to the horizontal direction when the substrate to be processed is arranged in the processing tank. On the other hand, when the second chemical liquid is used, the second chemical liquid is stored in the processing tank in a short time by supplying the second chemical liquid to the first region or both the first region and the second region. And the overall processing time can be shortened. In this manner, by using different treatment methods for a plurality of chemical solutions, it is possible to improve the processing performance of the substrate to be processed when each chemical solution is used.

Moreover, reactivity with the target substrate and the first chemical liquid is higher than the reactivity with the target substrate and the second chemical, the first chemical solution is more reactive with respect to the substrate When used, since a substantially uniform upward flow (rectification) is formed around the substrate to be processed, the substrate to be processed along the direction corresponding to the lateral direction when the substrate to be processed is placed in the processing tank. Uniformity of processing on the plate surface of the substrate can be secured. On the other hand, when the second chemical solution having low reactivity with respect to the substrate to be processed is used, even if the second chemical solution around the substrate to be processed is in a turbulent state, the second chemical solution around the substrate to be processed is used. If the concentration of the chemical solution is substantially uniform, the uniformity of processing on the plate surface of the substrate to be processed can be ensured.

  In the above-described substrate processing apparatus, it is preferable that the first chemical solution is made of ammonia water and the second chemical solution is made of hydrogen fluoride water. The treatment liquid is preferably water. The term “chemical solution comprising ammonia water” as used herein refers to an aqueous solution containing ammonia as a main component, and also includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is. Similarly, a “chemical solution comprising hydrogen fluoride water” refers to an aqueous solution containing hydrogen fluoride as a main component, and a small amount of one or more components (for example, a surfactant) other than hydrogen fluoride together with hydrogen fluoride. It is also a concept that includes an aqueous solution mixed in.

  In the substrate processing apparatus according to the present invention, the first supply unit and the second supply unit can supply water to the first region and the second region, respectively. When the type of the chemical liquid set in the setting unit is the first chemical liquid, the mechanism is in the second region with respect to the processing tank in a state where the first chemical liquid is stored in the processing tank. Water is supplied and water flows from the second region to the first region through the rectifying member. At this time, an upward flow of water is formed in the first region, and the second in the treatment tank is formed. When one chemical solution is replaced with the water and the type of the chemical solution set in the setting unit is the second chemical solution, the treatment is performed in a state where the second chemical solution is stored in the treatment tank. The first region or the first region relative to the tank Controlling the first supply unit and the second supply unit so as to replace the second chemical solution in the treatment tank with the water by supplying water to both the region and the second region. preferable.

  In this way, by changing the processing method in the control mechanism according to the type of the chemical solution, when the first chemical solution is stored in the processing tank, a substantially uniform upward flow of water around the substrate to be processed. Since (rectification) is formed, it is possible to ensure the uniformity of processing on the plate surface of the substrate to be processed along the direction corresponding to the lateral direction when the substrate to be processed is arranged in the processing tank. On the other hand, when the 2nd chemical | medical solution is stored in the processing tank, water is supplied to a processing tank for a short time by supplying water to the 1st area | region of a processing tank or both the 1st area | region and 2nd area | region. Can be stored, and the entire processing time can be shortened. At this time, a turbulent flow of water is formed in the first region of the treatment tank, and the water in the treatment tank is agitated by this turbulent flow to improve the cleaning effect of the substrate to be treated by water. Can do.

  In the substrate processing apparatus according to the present invention, the control mechanism processes the substrate to be processed with the first chemical liquid when the type of the chemical liquid set in the setting unit is the first chemical liquid. At this time, the first chemical solution is supplied to the second region of the processing tank in which the processing solution is stored and the substrate to be processed is accommodated in the first region, and the second chemical solution is provided via the rectifying member. The first chemical solution is allowed to flow from the region into the first region, and the processing solution in the processing tank is supplied to the first chemical solution while forming an upward flow at least in the vicinity of the substrate to be processed in the first region. And when the treatment liquid in the treatment tank is replaced with the first chemical liquid, the supply amount per unit time of the first chemical liquid supplied into the treatment tank is within the treatment tank. When replacing the first chemical solution with water It is preferably adapted to control the second supply section to be substantially the same as the supply amount per unit of the water time to be supplied to the processing bath. According to such a substrate processing apparatus, the processing uniformity within the plate surface of the substrate to be processed, in particular, the substrate to be processed along the direction corresponding to the vertical direction when the substrate to be processed is arranged in the processing tank. The uniformity of processing within the plate surface can be further improved.

  The rectifying member has a rectifying plate in which a plurality of through holes are formed, and the liquid supplied to the second region is transferred from the second region to the first region through the through holes of the rectifying plate. It is preferable to flow in a rectified state. According to such a substrate processing apparatus, liquid is formed in the first region of the processing tank while an upward flow having uniformity in the horizontal direction is formed in the first region of the processing tank by the rectifying member having a simple configuration. Can be introduced.

  The apparatus further includes a plurality of discharge members provided in the first region of the processing tank so that the arrangement positions along the vertical direction are different from each other, and the first supply unit performs the processing via the discharge members. It is preferable that liquid is supplied into the first region of the tank.

  Further, the apparatus further includes an input unit for inputting information on whether the first chemical solution or the second chemical solution is to be processed with respect to the substrate to be processed, and the setting unit is input at the input unit It is preferable to set which of the first chemical solution and the second chemical solution is to be used for the substrate to be processed based on the processed information. Thereby, for example, an operator or the like can input the setting in the setting unit from the outside.

  Furthermore, it is preferable to further include an ultrasonic generation mechanism that generates ultrasonic waves in the liquid in the treatment tank. According to such a substrate processing apparatus, it is possible to remove deposits attached to the plate surface of the substrate to be processed with a high removal rate.

A substrate processing method according to the present invention is a substrate processing method for processing a substrate to be processed by selectively immersing the substrate to be processed in either a first chemical solution or a second chemical solution, and A liquid which is provided inside and includes a first region located above the rectifying member and a second region located below the rectifying member, and the rectifying member is sent from the second region to the first region Preparing a treatment tank for performing rectification, storing a substrate to be processed in the first region of the treatment tank, and storing a treatment liquid in the treatment tank, thereby storing the treatment tank in the treatment tank. The step of immersing the substrate to be processed in the processed liquid, the step of setting whether the substrate to be processed is processed by the first chemical liquid or the second chemical liquid, and the type of the set chemical liquid In the case of the first chemical solution, the treatment solution The first chemical solution is supplied to the second region with respect to the processing tank in which the substrate to be processed is stored, and the first region is supplied from the second region to the first region via the rectifying member. A chemical solution is allowed to flow, and the substrate to be processed is treated with the first chemical solution while an upward flow of the first chemical solution is formed in the first region. In the case of the second chemical solution, the second chemical solution is stored in the first region or both the first region and the second region with respect to the processing tank in which the processing solution is stored and the substrate to be processed is accommodated. And the step of processing the substrate to be processed with the second chemical liquid by supplying the reactivity of the first chemical liquid and the substrate to be processed with the second chemical liquid and the substrate to be processed. It is characterized by higher than the reactivity of.

  According to such a substrate processing method, by changing the processing method according to the type of the chemical solution, when the first chemical solution is used, a substantially uniform upward flow (rectification) is formed around the substrate to be processed. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the substrate to be processed along the direction corresponding to the horizontal direction when the substrate to be processed is arranged in the processing tank. On the other hand, when the second chemical liquid is used, the second chemical liquid is stored in the processing tank in a short time by supplying the second chemical liquid to the first region or both the first region and the second region. And the overall processing time can be shortened. In this manner, by using different treatment methods for a plurality of chemical solutions, it is possible to improve the processing performance of the substrate to be processed when each chemical solution is used.

Moreover, reactivity with the target substrate and the first chemical liquid is higher than the reactivity with the target substrate and the second chemical, the first chemical solution is more reactive with respect to the substrate When used, since a substantially uniform upward flow (rectification) is formed around the substrate to be processed, the substrate to be processed along the direction corresponding to the lateral direction when the substrate to be processed is placed in the processing tank. Uniformity of processing on the plate surface of the substrate can be secured. On the other hand, when the second chemical solution having low reactivity with respect to the substrate to be processed is used, even if the second chemical solution around the substrate to be processed is in a turbulent state, the second chemical solution around the substrate to be processed is used. If the concentration of the chemical solution is substantially uniform, the uniformity of processing on the plate surface of the substrate to be processed can be ensured.

  In the substrate processing method described above, it is preferable that the first chemical solution is made of ammonia water and the second chemical solution is made of hydrogen fluoride water. The treatment liquid is preferably water. The term “chemical solution comprising ammonia water” as used herein refers to an aqueous solution containing ammonia as a main component, and also includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is. Similarly, a “chemical solution comprising hydrogen fluoride water” refers to an aqueous solution containing hydrogen fluoride as a main component, and a small amount of one or more components (for example, a surfactant) other than hydrogen fluoride together with hydrogen fluoride. It is also a concept that includes an aqueous solution mixed in.

  In the substrate processing method according to the present invention, when the type of the chemical liquid set is the first chemical liquid, the second chemical liquid is stored in the processing tank with the second chemical liquid stored in the processing tank. Water is supplied to the region, and water is allowed to flow from the second region to the first region via the rectifying member, and at this time, an upward flow of water is formed in the first region, When the first chemical solution is replaced with the rectified water, and the type of the chemical solution is the second chemical solution, the second chemical solution is stored in the processing tank. The method further comprises the step of replacing the second chemical in the processing tank with water by supplying water to the first area or both the first area and the second area with respect to the processing tank. It is preferable.

  Thus, when the first chemical solution is stored in the treatment tank by changing the treatment method according to the type of the chemical solution, a substantially uniform upward flow (rectification) of water around the substrate to be treated. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the substrate to be processed along the direction corresponding to the horizontal direction when the substrate to be processed is arranged in the processing tank. On the other hand, when the 2nd chemical | medical solution is stored in the processing tank, water is supplied to a processing tank for a short time by supplying water to the 1st area | region of a processing tank or both the 1st area | region and 2nd area | region. Can be stored, and the entire processing time can be shortened. At this time, a turbulent flow of water is formed in the first region of the treatment tank, and the water in the treatment tank is agitated by this turbulent flow to improve the cleaning effect of the substrate to be treated by water. Can do.

  Further, in the substrate processing method according to the present invention, when the set type of the chemical liquid is the first chemical liquid, the processing liquid is stored inside when the substrate to be processed is processed by the first chemical liquid. The first chemical is supplied to the second region of the processing tank in which the substrate to be processed is accommodated in the first region, and the first region is supplied from the second region to the first region via the rectifying member. 1 chemical liquid is introduced, and the processing liquid in the processing tank is replaced with the first chemical liquid while forming an upward flow at least in the vicinity of the substrate to be processed in the first region, In the step of replacing the treatment liquid with the first chemical liquid, the supply amount of the first chemical liquid supplied into the treatment tank per unit time is obtained by replacing the first chemical liquid in the treatment tank with the water. Is supplied into the treatment tank when replacing with It is preferable supplying rate of the serial water time and substantially identical. According to such a substrate processing method, the uniformity of processing within the plate surface of the substrate to be processed, in particular, the substrate to be processed along the direction corresponding to the vertical direction when the substrate to be processed is arranged in the processing tank. The uniformity of processing within the plate surface can be further improved.

  The rectifying member includes a rectifying plate in which a plurality of through holes are formed and divides the inside of the processing tank into the first region and the second region, and the liquid supplied to the second region is It is preferable to flow in the rectified state from the second region to the first region through the through hole of the rectifying plate. According to such a substrate processing method, liquid is formed in the first region of the processing tank while an upward flow having uniformity in the horizontal direction is formed in the first region of the processing tank by the rectifying member having a simple configuration. Can be introduced.

  In addition, the method further includes a step of inputting information about whether the first chemical solution or the second chemical solution is to be processed on the substrate to be processed from the outside, and for the substrate to be processed based on the input information. It is preferable to set whether to perform the treatment with the first chemical liquid or the second chemical liquid. As a result, for example, an operator or the like can input the setting as to whether the treatment is performed with the first chemical solution or the second chemical solution from the outside.

  Furthermore, it is preferable to generate ultrasonic waves in the liquid in the treatment tank in at least one of the steps. According to such a substrate processing method, the deposits adhered to the plate surface of the substrate to be processed can be removed with a high removal rate.

A program according to the present invention includes a first tank that accommodates a substrate to be processed and a processing tank that includes a second area disposed below the first area, and the first and second areas provided in the processing tank. A program that is executed by a control mechanism that controls a substrate processing apparatus that includes a rectifying member that divides an area and rectifies liquid that is sent from the second area to the first area. As a result, the substrate to be processed is accommodated in the first region of the processing tank, and the processing liquid is stored in the processing tank, whereby the processing substrate is stored in the processing liquid stored in the processing tank. In the step of immersing, the step of setting whether to process the first chemical solution or the second chemical solution on the substrate to be processed, and when the type of the chemical solution set is the first chemical solution, Treatment liquid The first chemical is supplied to the second region with respect to the processing tank in which the substrate to be processed is accommodated, and the first chemical is supplied from the second region to the first region via the rectifying member. A chemical solution is allowed to flow, and the substrate to be processed is treated with the first chemical solution while an upward flow of the first chemical solution is formed in the first region. In the case of the second chemical solution, the second chemical solution is stored in the first region or both the first region and the second region with respect to the processing tank in which the processing solution is stored and the substrate to be processed is accommodated. look including the, processing the substrate to be processed by said second chemical solution by supplying the reactive first chemical liquid and the substrate to be processed, the second chemical liquid the target substrate substrate processing a processing method such as higher than the reaction with the Characterized in that to execute device.

The recording medium according to the present invention includes a processing tank including a first area that accommodates a substrate to be processed and a second area that is disposed below the first area, and the first area that is provided in the processing tank. A recording medium on which a program executed by a control mechanism for controlling a substrate processing apparatus includes: a rectifying member that divides the second area and rectifies liquid sent from the second area to the first area. The program is executed by the control mechanism, whereby the substrate to be processed is accommodated in the first region of the processing tank, and the processing liquid is stored in the processing tank, whereby the processing is performed. A step of immersing the substrate to be processed in the processing solution stored in the tank; a step of setting whether the substrate to be processed is to be processed by the first chemical solution or the second chemical solution; and the set chemical solution Type of In the case of the first chemical liquid, the first chemical liquid is supplied to the second region with respect to the processing tank in which the processing liquid is stored and the substrate to be processed is stored, and the first chemical liquid is supplied via the rectifying member. The first chemical solution is caused to flow from the two regions into the first region, and at this time, the substrate to be processed is processed by the first chemical solution while forming an upward flow of the first chemical solution in the first region. When the treatment liquid in the treatment tank is replaced with the first chemical liquid that is rectified, on the other hand, when the type of the chemical liquid that is set is the second chemical liquid, the treatment liquid is stored. By supplying a second chemical solution to the first region or both the first region and the second region with respect to the processing tank in which the substrate to be processed is accommodated, the substrate to be processed is supplied by the second chemical solution. It is seen containing a step of treatment, the first Reactivity with the target substrate with the liquid is characterized in that to execute high such processing method than the reaction with the second chemical liquid and the substrate to be processed in the substrate processing apparatus.

  According to the substrate processing apparatus, the substrate processing method, the program, and the recording medium of the present invention, the processing method for the substrate to be processed is made different for a plurality of chemical solutions, whereby each of the processing substrates for each chemical solution is used. Processing performance can be improved.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following embodiments, an example in which the present invention is applied to a silicon wafer (semiconductor wafer) etching process and a subsequent rinsing process will be described. However, the present invention is not limited to the application to the etching process and the subsequent rinsing process, and can be widely applied to various processes of the substrate.

  FIG. 1 to FIG. 12 are diagrams for explaining an embodiment of a substrate processing apparatus, a substrate processing method, a substrate processing program, and a program recording medium according to the present invention. 1 is a diagram showing a schematic configuration of the substrate processing apparatus, FIG. 2 is a sectional view showing a section taken along line II-II in FIG. 1, and FIG. 3 is a control of the substrate processing apparatus in FIG. FIG. 4 is a first half of a flowchart showing control contents in the mechanism, and FIG. 4 is a second half of a flowchart showing control contents in the control mechanism of the substrate processing apparatus of FIG. In the flowcharts of FIGS. 3 and 4, the “* 1” and “* 2” portions are connected to each other. 5 to 12 are diagrams for explaining a substrate processing method that can be performed using the substrate processing apparatus shown in FIG.

  As shown in FIG. 1, a substrate processing apparatus 10 according to the present embodiment includes a processing tank 12 that contains a wafer W, a liquid supply facility 40 that supplies a processing liquid into the processing tank 12, and a wafer to be processed (processed) A holding member (also called a wafer boat) 20 that holds a substrate (W) and a control mechanism 18 that controls the operation of each component are provided. As shown in FIG. 1, a rectifying member 28 is provided in the processing tank 12. With the flow regulating member 28, the inside of the processing tank 12 is divided into a first region 12 a located on the upper side of the flow regulating member 28 and a second region 12 b located on the lower side of the flow regulating member 28.

  Such a substrate processing apparatus 10 sequentially supplies a plurality of types of processing liquids from the liquid supply facility 40 into the processing tank 12, and performs various processes on the wafers W accommodated in the processing tank 12. It is a device for going. In particular, in the present embodiment, as shown in FIG. 1, the substrate processing apparatus 10 further includes an ultrasonic generation mechanism 30 that can generate ultrasonic waves in the processing liquid stored in the processing tank 12. Yes. Therefore, according to the substrate processing apparatus 10 in the present embodiment, the wafer W accommodated in the processing bath 12 can be ultrasonically cleaned.

  Hereinafter, each component of the substrate processing apparatus will be described in more detail.

  First, the liquid supply equipment 40 will be described. The liquid supply facility 40 includes a first supply unit for supplying liquid to the first region 12a and a second supply unit for supplying liquid to the second region 12b. Specifically, as shown in FIG. 1, the liquid supply facility 40 includes a lower supply pipe 41 connected to the second region 12 b of the processing tank 12 and a first connection connected to the first region 12 a of the processing tank 12. The first to third upper supply pipes 42, 43, 44, and the lower supply pipe 41 and the pure water supply pipe 48 connected to the upper supply pipes 42, 43, 44 are provided.

  The pure water supply pipe 48 is connected to a pure water source 64. The pure water supply pipe 48 is provided with a discharge mechanism 65. By operating the discharge mechanism 65, the processing liquid is supplied from the pure water supply pipe 48 to the lower supply pipe 41 and the upper supply pipes 42, 43, 44. As shown in FIG. 1, the lower supply pipe 41 and the upper supply pipes 42, 43, 44 and the pure water supply pipe 48 are connected via a switching mechanism 50. By operating this switching mechanism 50, the processing liquid from the pure water supply pipe 48 can be fed into only a desired supply pipe among the lower supply pipe 41 and the upper supply pipes 42, 43, 44. Become. Here, the “treatment liquid” is a liquid used for the treatment, and is a concept including not only pure water but also a chemical solution.

  Among these, the pure water source 64 and the discharge mechanism 65 will be described in detail first. The pure water source 64 can be configured by a known storage facility that can store pure water (DIW), such as a tank that stores the processing liquid. On the other hand, the discharge mechanism 65 can be configured from a known facility or device such as a pump. As a more specific example, an air-driven bellows pump that can adjust the discharge amount by adjusting the air pressure can be used as the discharge mechanism 65.

  As described above, the liquid supply facility 40 is connected to the control mechanism 18. The discharge mechanism 65 is controlled by the control mechanism 18. Specifically, the control mechanism 18 controls the driving and stopping of the discharge mechanism 65 and the supply flow rate of the processing liquid when the discharge mechanism 65 is driven. When the discharge mechanism 65 is an air-driven bellows pump, the air pressure is controlled. When the discharge mechanism 65 is other than an air-driven bellows pump, for example, the amount of electric power to be input is controlled. Thus, the discharge amount of the pump when the discharge mechanism 65 is driven can be adjusted.

  Next, the switching mechanism 50 will be described in detail. As shown in FIG. 1, in the present embodiment, the switching mechanism 50 has first to sixth on-off valves 51, 52, 53, 54, 55, 56.

  Among these, the first opening / closing valve 51 is connected to the lower supply pipe 41. The second opening / closing valve 52 is connected to the first upper supply pipe 42. Further, the third opening / closing valve 53 is connected to the second upper supply pipe 43. Further, the fourth open / close valve 54 is connected to the third upper supply pipe 44. The first to fourth on-off valves 51-54 turn on / off the connection state (communication state) between the pure water supply pipe 48 and the supply pipe 41-44 connected to each valve 51-54. It has become. That is, the supply of the processing liquid into the processing tank 12 through the supply pipes 41-44 can be controlled by opening / closing the open / close valves 51-54.

By the way, in this Embodiment, the liquid supply equipment 40 has the some chemical | medical solution element sources 61 and 62 which stored the different chemical | medical solution elements. In this liquid supply equipment 40, the chemical element supplied from the chemical element sources 61 and 62 and the pure water supplied from the pure water source 64 are mixed to produce a chemical liquid (treatment liquid) having a desired concentration. Can do. In the example shown in the figure, a first chemical element source 61 storing high concentration aqueous ammonia (NH ₄ OH) as a chemical element, and hydrogen fluoride water containing hydrogen fluoride (HF) at a high concentration as a chemical element. A stored second chemical element source 62 is provided.

  As shown in FIG. 1, the fifth open / close valve 55 of the switching mechanism 50 described above is connected to the first chemical element source 61, and the sixth open / close valve 56 is connected to the second chemical element source 62. Therefore, by opening the fifth open / close valve 55, the high-concentration ammonia water fed from the first chemical element source 61 is mixed into the pure water fed from the pure water supply pipe 48, so that the treatment liquid has a desired concentration. Ammonia water can be produced. Further, by opening the sixth open / close valve 56, the high-concentration hydrogen fluoride water fed from the second chemical element source 62 is mixed into the pure water fed from the pure water supply pipe 48, and a desired treatment liquid is obtained. A concentration of hydrogen fluoride water can be produced.

  The switching mechanism 50 is connected to the control mechanism 18. The opening / closing operation and the opening degree of the first to sixth opening / closing valves 51-56 are controlled by the control mechanism 18. Thereby, pure water or a chemical solution having a desired concentration can be supplied into the treatment tank 12 at a desired flow rate via each supply pipe 41-44.

  Note that such a configuration of the switching mechanism 50 is merely an example. A known facility, equipment, or the like that can supply a treatment liquid having a desired concentration into the treatment tank 12 at a desired flow rate via a desired supply pipe 41-44 can be used as the switching mechanism 50.

  Here, it has already been described that the liquid supply facility 40 includes a first supply unit for supplying liquid to the first region 12a and a second supply unit for supplying liquid to the second region 12b. However, specifically, the first supply unit includes the upper supply pipe 42-44, the open / close valves 52, 53, 54, 56 of the switching mechanism 50, the second chemical element source 62, the pure water source 64, and the discharge mechanism 65. The hydrogen fluoride water having a predetermined concentration is supplied to the first region. On the other hand, the second supply unit includes the lower supply pipe 41, the open / close valves 51, 55, 56 of the switching mechanism 50, the first chemical element source 61, the second chemical element source 62, the pure water source 64, and the discharge mechanism 65. Thus, either ammonia water or hydrogen fluoride water having a predetermined concentration is selectively supplied to the second region 12b. Note that the first supply unit and the second supply unit are not limited to the above-described configuration, and the first supply unit can supply hydrogen fluoride water to the first region 12a. Other configurations can be used, and the second supply unit can be configured as long as it can selectively supply either ammonia water or hydrogen fluoride water to the second region 12b. Can be used.

  Next, the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44 will be described in detail. As shown in FIG. 1, in the present embodiment, the liquid supply facility 40 is attached to the processing tank 12 and first to fourth discharge members 71, 72, 73, which discharge the processing liquid into the processing tank 12. 74 is further included. The ends of the supply pipes 41-44 are connected to first to fourth discharge members 71-74 that discharge the processing liquid into the processing tank 12, respectively.

  Specifically, as shown in FIG. 1, the ejection members 71, 72, 73, and 74 are attached to the processing tank 12 at four different vertical positions (vertical positions). Among these, the 1st discharge member 71 is arrange | positioned in the 2nd area | region 12b of the processing tank 12, and is connected with the lower side supply pipe | tube 41. FIG. The second discharge member 72 is disposed at the lowermost position in the first region 12 a of the processing tank 12 and is connected to the first upper supply pipe 42. Further, the third discharge member 73 is disposed at a position above the second discharge member 72 in the first region 12 a of the processing tank 12 and is connected to the second upper supply pipe 43. Further, the fourth discharge member 74 is disposed at a position above the second discharge member 72 and the third discharge member 73 in the first region 12 a of the processing tank 12, and is connected to the third upper supply pipe 44. ing.

  As shown in FIG. 1, the processing liquid discharged from the second discharge member 72 is mainly supplied around the lower region of the wafer W disposed in the first region 12 a of the processing tank 12. It becomes like this. Further, as shown in FIG. 1, the processing liquid discharged from the third discharge member 73 is mainly supplied around the central region of the wafer W disposed in the first region 12 a of the processing bath 12. It becomes like this. Further, as shown in FIG. 1, the processing liquid discharged from the fourth discharge member 74 is mainly supplied around the upper region of the wafer W arranged in the first region 12 a of the processing bath 12. It becomes like this.

  In FIG. 2, the fourth discharge member 74 is illustrated in a cross-sectional view of the processing tank 12. In the present embodiment, the first to fourth ejection members 71, 72, 73, 74 differ only in the arrangement position in the vertical direction, and the fourth ejection member 74 shown in FIG. Thru | or the 3rd discharge member 71,72,73, and the same structure. As shown in FIGS. 1 and 2, in this example, each of the discharge members 71, 72, 73, 74 is constituted by a pair of nozzles provided on the opposite side walls of the processing tank 12. The nozzle is formed as an elongated cylindrical member extending in the horizontal direction along the wall surface of the processing tank 12. The two cylindrical members constituting each discharge member 71, 72, 73, 74 are arranged at the same position in the vertical direction (see FIG. 1).

  One end of the cylindrical member forming the discharge members 71, 72, 73, 74 is closed, and the other end is connected to the corresponding supply pipes 41, 42, 43, 44. As shown in FIG. 2, each cylindrical member is provided with a large number of discharge ports 71a, 72a, 73a, and 74a arranged at regular intervals along the longitudinal direction thereof. The arrangement positions of the discharge ports 71a, 72a, 73a, and 74a are set based on the arrangement position of the processing target wafer W held by the holding member 20, as will be described later. In addition, it is preferable that the discharge direction from each discharge member 71,72,73,74 can be changed suitably.

  However, the configuration of the discharge members 71, 72, 73, and 74 is merely an example, and a known member or the like can be used. Further, the discharge member may be omitted and each supply pipe 41-44 may be directly connected to the processing tank.

  Incidentally, the pure water supply pipe 48 may be provided with an adjusting mechanism 67 for adjusting various conditions of the processing liquid flowing in the pure water supply pipe 48. As such an adjusting mechanism 67, a gas concentration adjusting mechanism for adjusting the dissolved gas concentration of the processing liquid, a bubble amount adjusting mechanism for adjusting the amount of bubbles contained in the processing liquid, and a temperature adjustment for adjusting the temperature of the processing liquid. A mechanism or the like can be selected.

  Next, the processing tank 12 that receives the processing liquid from the liquid supply equipment 40 as described above will be described in detail. The processing tank 12 has a substantially rectangular parallelepiped outline as shown in FIGS. 1 and 2. As will be described later, an upper opening 12c for taking in and out the wafer W is formed in the processing tank 12. A discharge pipe 13 for discharging the stored processing liquid is provided at the bottom of the processing tank 12 so as to be openable and closable.

  Moreover, as shown in FIG. 1, the outer tank 15 is provided so that the upper opening 12c of the process tank 12 may be surrounded. The outer tank 15 collects the processing liquid overflowing from the upper opening 12 c of the processing tank 12. Similarly to the treatment tank 12, a discharge pipe 16 for discharging the collected treatment liquid is provided in the outer tank 15 so as to be openable and closable.

  Such a processing tank 12 and the outer tank 15 are formed using quartz etc. which were rich in chemical resistance, for example. Further, the thickness of the bottom of the processing tank 12 is such that the type of material forming the processing tank 12 and the ultrasonic irradiation from the ultrasonic generation mechanism 30 are such that ultrasonic waves from the ultrasonic generation mechanism 30 described later can be transmitted. It is determined in consideration of the frequency of the sound wave.

  The processing liquid discharged from the discharge pipes 13 and 16 of the processing tank 12 and the outer tank 15 may be discarded as it is, or may be supplied again into the processing tank 12 through a filter or the like. . When the processing liquid collected in the outer tank 15 is reused, for example, a circulation pipe 16a connected to the outer tank 15 and the pure water source 64 may be provided as shown by a dotted line in FIG.

  Next, the rectifying member 28 disposed in the processing tank 12 will be described in detail. The rectifying member 28 is a member for adjusting the flow of the processing liquid flowing from the second region 12 b of the processing tank 12 to the first region 12 a and forming an upward flow in the first region 12 a in the processing tank 12. Here, the “upward flow” means a flow from the lower side to the upper side, and is not limited to a flow parallel to the vertical direction (vertical direction).

  As shown in FIGS. 1 and 2, in the present embodiment, the rectifying member 28 is made of a rectifying plate having a large number of through holes 29. The rectifying plate 28 is supported so that its plate surface is parallel to the horizontal plane. As shown in FIG. 2, a circular through hole 29 is formed on almost the entire surface of the rectifying plate 28 including the region immediately below the wafer W accommodated in the first region 12 a of the processing tank 12. In this example, the through holes 29 are regularly arranged on the rectifying plate 28. Therefore, according to such a rectifying plate 28, the upward flow passing along the vertical direction at a substantially uniform flow rate in each position on the virtual horizontal plane in the first region 12 a of the treatment tank 12 is supplied to the first flow of the treatment tank 12. It can be formed in the region 12a. That is, it is possible to form an upward flow along the vertical direction in which the speed variation due to the horizontal position is reduced over substantially the entire first region 12 a of the processing tank 12.

  The rectifying plate 28 can be formed of the same material as the processing tank 12. Further, the thickness of the rectifying plate 28 is the same as the thickness of the bottom portion of the treatment tank 12 described above, and the kind of material forming the rectifying plate 28 and the ultrasonic wave so that the ultrasonic wave from the ultrasonic generating mechanism 30 can be transmitted. The frequency is determined in consideration of the frequency of ultrasonic waves emitted from the generation mechanism 30.

  The rectifying member 28 having such a configuration is merely an example, and various known rectifying members can be used.

  Next, the holding member 20 that holds the wafer W will be described. As shown in FIGS. 1 and 2, the holding member 20 has four rod-shaped members 22 extending in a substantially horizontal direction and a base portion 24 that cantilever-supports the four rod-shaped members 22 from one side. . The rod-shaped member 22 supports a plurality of wafers W processed at one time, for example, 50 wafers W from below. For this reason, each rod-like member 22 is formed with grooves (not shown) arranged at regular intervals along the longitudinal direction. The wafer W engages with the groove, and the holding member is formed so that the plate surface of each wafer W is substantially perpendicular to the extending direction of the rod-like member, that is, the plate surface of each wafer W is along the vertical direction. 20 (see FIG. 1).

  Incidentally, as can be understood from FIG. 2, the arrangement pitch of the ejection ports 71 a to 74 a of the ejection members 71 to 74 described above is substantially the same as the arrangement pitch of the wafers W held by the holding member 20. In particular, the discharge ports 72 a, 73 a, 74 a of the second to fourth discharge members 72, 73, 74 that directly supply the processing liquid to the first region 12 a of the processing tank 12 are adjacent wafers held by the holding member 20. It is arranged so that the processing liquid can be discharged during W (that is, in the direction of the arrow in FIG. 2).

  On the other hand, the base 24 of the holding member 20 is connected to a lifting mechanism (not shown). By lowering the holding member 20 holding the wafer W by the lifting mechanism, the wafer W can be accommodated in the first region 12a of the processing tank 12, and the processing liquid stored in the processing tank 12 is contained in the processing liquid. It is also possible to immerse the wafer W in the wafer.

  The lifting mechanism is connected to the control mechanism 18. The control mechanism 18 controls the accommodation of the wafer W in the first region 12 a of the processing tank 12 and the discharge of the wafer W from the first region 12 a of the processing tank 12.

  Next, the ultrasonic generation mechanism 30 will be described. As shown in FIG. 1, the ultrasonic generation mechanism 30 is connected to a vibrator 38 attached to the bottom outer surface of the processing tank 12, a high-frequency drive power supply 32 for driving the vibrator 38, and a high-frequency drive power supply 32. And an ultrasonic oscillator 34. In the present embodiment, a plurality of vibrators 38 are provided, and the vibrators 38 are arranged so as to partially occupy the outer surface of the bottom of the processing tank 12. As shown in FIG. 1, the ultrasonic generation mechanism 30 further includes a drive switching mechanism 36 connected to the ultrasonic oscillator 34 and each transducer 38. With this drive switching mechanism 36, it is possible to drive the plurality of vibrators 38 as a whole or to individually drive one or two or more vibrators 38.

  When the vibrator 38 is driven to vibrate, ultrasonic waves propagate to the processing liquid stored in the first region 12 a of the processing tank 12 through the bottom of the processing tank 12 and the rectifying member 28. Thereby, ultrasonic waves are generated in the entire processing liquid in the processing tank 12. The ultrasonic generation mechanism 30 is connected to the control mechanism 18, and the application of ultrasonic waves to the processing liquid is controlled by the control mechanism 18.

  Next, the control mechanism 18 will be described. As described above, the control mechanism 18 is connected to each component of the substrate processing apparatus 10 and controls the operation of each component. The control contents in the control mechanism 18 are as shown in the flowcharts of FIGS. 3 and 4, and the details will be described later. In the present embodiment, the control mechanism 18 determines whether to process the wafer 19 with ammonia water or hydrogen fluoride water, and a controller 19a composed of a CPU, a recording medium 19b connected to the controller 19a, and the wafer W. A setting device 19c for setting, and an input device 19d made of, for example, a touch panel for inputting information on whether the wafer W is to be processed with ammonia water or hydrogen fluoride water. Have.

  The recording medium 19b stores a program for executing a wafer W processing method to be described later along with various setting data. The recording medium 19b can be composed of a memory such as a ROM and a RAM, a disk-shaped recording medium such as a hard disk and a CD-ROM, and other known recording media. The setting in the setting device 19c is performed based on information input from the outside by an operator or the like in the input device 19d. The setting in the setting device 19c is not limited to information from the input device 19d, and may be performed based on information sent from a host computer or the like by remote operation, for example.

  Next, a wafer W processing method that can be performed by the substrate processing apparatus 10 having such a configuration will be described mainly with reference to FIGS. This processing method is performed by controlling the substrate processing apparatus 10 by the control mechanism 19.

  First, as shown in Step 1 of FIG. 3, the operator inputs information about whether the wafer W is to be processed with ammonia water or hydrogen fluoride water with an input device 19 d such as a touch panel. Next, as shown in Step 2 of FIG. 3, on the basis of the information input to the input device 19d, the setting device 19c sets whether to process the wafer W with ammonia water or hydrogen fluoride water. Is done.

  Next, as shown in Step 3 of FIG. 3, pure water is stored in the treatment tank 12 as a treatment liquid (see FIG. 5). Specifically, the discharge mechanism 65 is driven by a signal from the control mechanism 18, and pure water stored in the pure water source 64 is sent toward the switching mechanism 50 through the pure water supply pipe 48. The pure water flowing through the pure water supply pipe 48 is adjusted by the adjusting mechanism 67 in terms of dissolved gas concentration, amount of bubbles mixed in, temperature, and the like. At this time, the fifth opening / closing valve 55 and the sixth opening / closing valve 56 of the switching mechanism 50 are closed based on a signal from the control mechanism 18. Therefore, the chemical elements from the first chemical element source 61 and the second chemical element source 62 are not mixed in the pure water fed from the pure water supply pipe 48. That is, pure water is supplied into the treatment tank 12 as a treatment liquid.

  At this time, the first to fourth on-off valves 51, 52, 53, 54 of the switching mechanism 50 are all opened based on the signal from the control mechanism 18. Therefore, pure water is supplied into the processing tank 12 from all of the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. For this reason, the supply amount of pure water per unit time can be increased to 40 to 90 l / min, for example. As a result, pure water can be efficiently stored in the treatment tank 12 in a short time.

  Next, the wafer W is accommodated in the first region 12 a of the processing tank 12. Specifically, an elevating mechanism (not shown) lowers the holding member 20 based on a signal from the control mechanism 18. At this time, the holding member 20 holds a predetermined number (for example, 50) of wafers W to be processed. As a result, the plurality of wafers W are accommodated in the first region 12 a of the processing tank 12 and are immersed in the pure water stored in the processing tank 12.

  The process of storing pure water as a processing liquid in the processing tank 12 and the process of storing the wafer W in the first region 12a of the processing tank 12 can be performed in the reverse order. Further, these two steps may be performed in parallel.

  Next, as shown in Step 4 of FIG. 3, it is determined whether the content of the setting performed in Step 2 is to process the wafer W with ammonia water or with hydrogen fluoride water. . Hereinafter, a processing method in the case where the wafer W is processed with ammonia water will be described with reference to Steps 5-1 to 8-1 in FIGS. The processing method in the case of processing with hydrogen water will be described with reference to Steps 5-2 to 7-2 in FIGS.

  First, the case where the wafer W is treated with aqueous ammonia will be described. As shown in Step 5-1, ammonia water is supplied to the second region 12b of the processing tank 12 through the lower supply pipe 41, and the pure water in the processing tank 12 is replaced with ammonia water (see FIG. 6). ). Specifically, first, the output of the discharge mechanism 65 is reduced by a signal from the control mechanism 18. Further, the fifth opening / closing valve 55 of the switching mechanism 50 is opened. Thereby, the high concentration ammonia water from the 1st chemical | medical solution element source 61 comes to be mixed in the pure water sent from the pure water supply pipe 48. In addition, the second to fourth on-off valves 72, 73, 74 are closed. As a result, as shown in FIG. 6, ammonia water (chemical solution) diluted to a predetermined concentration is used as a processing liquid via the lower supply pipe 41 to the second region 12b of the processing tank 12 at a predetermined flow rate (for example, 40 to 40). 50 l / min).

  As described above, the lower supply pipe 41 is connected to the pair of first discharge members 71. The chemical solution fed from the lower supply pipe 41 is discharged to the second region 12 b of the processing tank 12 through the first discharge member 71. In this Embodiment, a pair of 1st discharge member 71 is symmetrically arrange | positioned so that it may oppose on a pair of wall surface of the process tank 12 which opposes. Moreover, as shown in FIG. 4, each 1st discharge member 71 discharges a chemical | medical solution toward diagonally downward, and the chemical | medical solution discharged from the different discharge member 71 forms a symmetrical flow in the 2nd area | region 12b.

  Therefore, the chemical liquid discharged from one first discharge member 71 and the chemical liquid discharged from the other first discharge member 71 collide with each other at the center of the second region 12b, and the liquid from the first discharge member 71 The flow along the discharge direction is canceled out. In this manner, the local chemical flow along the specific direction in the second region 12b is canceled out by the wall surface of the processing tank 12 and the rectifying plate 28, and the pressure in the second region 12b increases substantially uniformly. To come. As a result, substantially the same amount of chemical solution passes through each of the numerous through holes 29 of the rectifying plate 28 and flows from the second region 12b to the first region 12a along the vertical direction. That is, the inflow of the chemical liquid from the second region 12b into the first region 12a is performed substantially uniformly over substantially the entire region on the rectifying plate 28.

  As described above, an upward flow is formed in the first region 12a of the processing tank 12, and the pure water in the processing tank 12 is replaced by the chemical solution from the lower side of the processing tank 12. Further, as shown in FIG. 6, with the supply of the chemical solution into the treatment tank 12, the treatment liquid that has been stored in the treatment tank 12 until then is approximately the same amount as the amount of the chemical solution flowing into the treatment tank 12, It is discharged from the upper opening 12 c of the processing tank 12 to the outer tank 15. That is, according to the present embodiment, the pure water in the treatment tank 12 can be efficiently replaced with the chemical solution (ammonia water), and the amount of the chemical solution required for the replacement can be saved.

  When ammonia water is supplied around the wafer W in the first region 12a, etching of the wafer W with ammonia water is started. As described above, according to the present embodiment, the chemical liquid flows into the first region 12a from substantially the entire region on the rectifying plate 28 substantially uniformly. Therefore, it is possible to ensure the uniformity of processing on the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.

  Next, as shown in Step 6-1 of FIG. 3, the wafer W is immersed in the ammonia water (chemical solution) while replenishing the processing tank 12 with the ammonia water (chemical solution) (see FIG. 7). Specifically, the open / close state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from Step 5-1 described above. Accordingly, the ammonia water is continuously supplied to the second region 12b of the processing tank 12 at a predetermined flow rate (for example, 40 to 50 l / min). This step is carried out for several minutes, for example.

  During this process, an upward flow of the chemical solution is formed in the first region 12a of the processing tank 12. Further, as shown in FIG. 7, with the inflow of new ammonia water from the second region 12 b to the first region 12 a, the ammonia water that has been stored in the treatment tank 12 until then is newly added to the treatment tank 12. The same amount of ammonia water inflow is discharged from the upper opening 12 c of the treatment tank 12 to the outer tank 15. That is, not only the concentration of the ammonia water is kept constant around the wafer W to be processed disposed in the first region 12a of the processing tank 12, but also how the ammonia water flows on the plate surface of the wafer W to be processed. For example, the flow velocity is substantially uniform over the plate surface. Therefore, although the wafer W to be processed has a sharp reactivity with the ammonia water, the etching amount in this process can be made substantially uniform over the plate surface of the wafer W to be processed.

  Next, as shown in Step 7-1 of FIG. 4, pure water is supplied to the second region 12b of the processing tank 12 through the lower supply pipe 41, and the ammonia water in the processing tank 12 is replaced with pure water. (See FIG. 8). Specifically, the fifth open / close valve 55 of the switching mechanism 50 is closed by a signal from the control mechanism 18. Thereby, mixing of the high concentration ammonia water from the 1st chemical | medical solution element source 61 with respect to the pure water sent from the pure water supply pipe 48 stops. On the other hand, the open / close state of each open / close valve of the other switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from Step 6-1 described above. As a result, pure water is supplied to the second region 12b of the processing tank 12 at a predetermined flow rate (for example, 40 to 50 l / min). That is, the supply amount of the processing liquid supplied to the second region 12b of the processing tank 12 is substantially constant from Step 5-1 to Step 7-1.

  As described above and as shown in FIG. 8, each first discharge member 71 discharges pure water obliquely downward, and the pure water discharged from different discharge members 71 is symmetrical in the second region 12b. To form a common flow. Accordingly, the pure water discharged from one of the first discharge members 71 and the pure water discharged from the other first discharge member 71 collide with each other at the central portion of the second region 12 b, and the first discharge member 71. The flow along the discharge direction from is canceled. In this way, the local pure water flow along the specific direction in the second region 12b is canceled out by the wall surface of the processing tank 12 and the current plate 28, and the pressure in the second region 12b is substantially uniform. To rise. As a result, substantially the same amount of pure water passes through each of the large number of through holes 29 of the rectifying plate 28 and flows from the second region 12b to the first region 12a along the vertical direction. That is, the inflow of pure water from the second region 12 b into the first region 12 a is performed substantially uniformly over substantially the entire region on the rectifying plate 28.

  As described above, an upward flow is formed in the first region 12a of the processing tank 12, and the ammonia water (chemical solution) in the processing tank 12 is replaced with pure water from the lower side of the processing tank 12. In addition, as shown in FIG. 4, with the supply of pure water into the treatment tank 12, the ammonia water that has been stored in the treatment tank 12 until then is substantially the same as the amount of pure water flowing into the treatment tank 12. Only from the upper opening 12 c of the processing tank 12 is discharged to the outer tank 15. That is, according to this Embodiment, the chemical | medical solution (ammonia water) in the processing tank 12 can be efficiently substituted with pure water.

  When the ammonia water is replaced with pure water around the wafer W in the first region 12a, the etching of the wafer W with the ammonia water is completed. As described above, according to the present embodiment, pure water flows from substantially the entire region on the rectifying plate 28 into the first region 12a substantially uniformly. Therefore, it is possible to ensure the uniformity of processing on the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.

  Further, an upward flow of ammonia water is always formed in the first region 12a of the processing tank 12 from the start to the end of etching of the wafer W with the ammonia water. Therefore, it is possible to ensure the uniformity of the etching amount with respect to the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.

  Further, as described above, the processing liquid (pure water) in the processing tank 12 (particularly around the wafer W to be processed) is gradually replaced by the chemical liquid (ammonia water) from the lower side. Similarly, as described above, the chemical solution (ammonia water) in the processing tank 12 (particularly around the wafer W to be processed) is gradually replaced with pure water from the lower side. Therefore, as shown in FIG. 12, the concentration of the chemical solution around the upper portion of the wafer W arranged in the first region 12a of the processing tank 12 (the dashed line in FIG. 12) and the chemical solution around the lower portion. The concentration (solid line in FIG. 12) is a fixed time after starting the supply of the chemical solution into the processing tank 12 and a fixed time after starting the supply of pure water into the processing tank 12. It takes a different value. That is, of the plate surface of the wafer W, the processing with the chemical solution is substantially started between the portion disposed above and the portion disposed below when the wafer W is disposed in the processing bath 12. And the timing at which the treatment with the chemical solution is substantially ended are different. However, the supply flow rate per unit time of the ammonia water (first chemical solution) into the second region 12b of the processing tank 12 in Step 5-1 described above, and the second region 12b of the processing tank 12 in Step 7-1. By substantially making the supply flow rate of pure water (water) per unit time substantially the same, the time during which the treatment with the chemical solution is performed can be made substantially the same (see FIG. 12). Accordingly, it is possible to ensure the uniformity of processing on the plate surface of the wafer W along the direction corresponding to the vertical direction when the wafer W is arranged in the processing bath 12.

  Furthermore, in steps 5-1 to 7-1 where the processing on the processing target wafer can proceed, a uniform upward flow of the chemical solution is formed around the plate surface of the processing target wafer W. That is, the flow of ammonia water on the plate surface of the wafer W to be processed, for example, the flow velocity is substantially uniform over the plate surface. Therefore, although the wafer W to be processed has a sharp reactivity with the ammonia water, the etching amount can be made substantially uniform over the plate surface of the wafer W to be processed.

  As described above, the wafer W can be etched with a substantially uniform etching amount over the entire area of the plate surface between Step 5-1 and Step 7-1.

  Next, as shown in Step 8-1 of FIG. 4, the first region 12a and the second region 12b of the processing tank 12 are connected via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. Pure water is supplied to both (see FIG. 9). Specifically, first, the output of the discharge mechanism 65 is increased by a signal from the control mechanism 18. Further, the second to fourth on-off valves 52, 53, and 54 of the switching mechanism 50 are opened. As a result, as shown in FIG. 9, pure water is supplied to the treatment tank 12 through the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44 at a predetermined flow rate (for example, 80 l / min or more). Will be supplied.

  As described above, the first to third upper supply pipes 42, 43, 44 are connected to the pair of second to fourth discharge members 72, 73, 74, respectively. Pure water fed from the first to third upper supply pipes 42, 43, 44 is directly discharged into the first region 12 a of the processing tank 12 through the second to fourth discharge members 72, 73, 74. . In the present embodiment, each pair of ejection members 72, 73, 74 is symmetrically disposed on the pair of wall surfaces of the opposing treatment tank 12 so as to face each other. Further, the discharge ports 72 a, 73 a, 74 a of the second to fourth discharge members 72, 73, 74 can discharge pure water between adjacent wafers W held by the holding member 20. It is arranged.

  Therefore, the pure water discharged from one discharge member of each pair of discharge members 72, 73, 74 facing each other and the pure water discharged from the other discharge member are between the wafer W and the wafer W. Collide in the gap. The second to fourth ejection members 72, 73, and 74 are arranged at different vertical positions. For this reason, the liquid (pure water) stored in the processing bath 12 is vigorously stirred in the first region 12a of the processing bath 12 (at least around the plate surface of the wafer W to be processed). As a result, the chemical solution of the ion level that has stayed around the wafer W can be reliably washed away from the periphery of the wafer W. Further, the deposits (particles) adhering to the wafer W can be removed from the wafer W.

  In the present embodiment, pure water is also supplied from the lower supply pipe 41 into the second region 12 b of the treatment tank 12. As described above, the pure water supplied to the second region 12b passes through the rectifying plate 28 and flows into the first region 12a as a substantially uniform upward flow (translational flow) over the entire surface of the rectifying plate 28. Then, the pure water flowing into the first region 12a from the second region 12b causes the liquid flow in the first region 12a to be directed upward as a whole. Therefore, the chemical solution remaining around the wafer W and the deposits removed from the wafer W can be lifted upward in the processing tank 12 and further flowed out to the outer tank 15. Thus, the rinsing process of the wafer W can be performed more reliably, and the removed deposit can be prevented from adhering to the wafer W again.

  Such a process according to Step 8-1 is performed for several minutes, for example. When the process according to Step 8-1 is completed, the holding member 20 is raised, and the wafer W is discharged from the processing tank 12. As described above, a series of processes using the ammonia water on the processing target wafer W is completed.

  Next, a case where the wafer W is processed with hydrogen fluoride water will be described. As shown in Step 5-2 of FIG. 3, hydrogen fluoride water is supplied to the second region 12b of the processing tank 12 through the lower supply pipe 41 and the processing tank through the upper supply pipes 42, 43, and 44. Hydrogen fluoride water is also supplied to the 12 first regions 12a, and the pure water in the treatment tank 12 is replaced by the hydrogen fluoride water (see FIG. 10). Specifically, the first to fourth on-off valves 51, 52, 53, and 54 of the switching mechanism 50 are all opened by the signal from the control mechanism 18, and the sixth on-off valve 56 is opened. As a result, the high concentration hydrogen fluoride water from the second chemical element source 62 is mixed into the pure water fed from the pure water supply pipe 48, and this hydrogen fluoride water is mixed into the upper supply pipe. Via the 42, 43, 44 and the lower supply pipe 41, the first region 12a and the second region 12b of the processing tank 12 are supplied at a predetermined flow rate (for example, 80 l / min or more). Here, in supplying hydrogen fluoride water to the treatment tank 12 as shown in Step 5-2, since hydrogen fluoride water is supplied to both the first region 12a and the second region 12b, Step 5-1 It should be noted that the supply amount can be made sufficiently larger than the supply of ammonia water to the treatment tank 12 as shown in FIG.

  When hydrogen fluoride water is supplied around the wafer W in the first region 12a, etching of the wafer W with hydrogen fluoride water is started.

  Next, as shown in Step 6-2 of FIG. 3, the wafer W is immersed in hydrogen fluoride water while replenishing hydrogen fluoride water to both the first region 12a and the second region 12b of the treatment tank 12. deep. Specifically, the open / close state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from Step 6-1 described above. As a result, the wafer W is etched with hydrogen fluoride water.

  At this time, the hydrogen fluoride water discharged from one discharge member of the pair of discharge members 72, 73, 74 facing each other and the hydrogen fluoride water discharged from the other discharge member are the wafer W. And the wafer W collide in the gap. The second to fourth ejection members 72, 73, and 74 are arranged at different vertical positions. For this reason, hydrogen fluoride is vigorously stirred in the first region 12a of the treatment tank 12, and a turbulent flow of hydrogen fluoride water is formed in the first region 12a. The concentration of the hydrogen fluoride water in the inside is uniform, and the reactivity of the hydrogen fluoride water with respect to the wafer W is smaller than the reactivity with the ammonia water. Etching of the wafer W can be performed uniformly.

  Next, as shown in Step 7-2 of FIG. 4, to the first region 12a and the second region 12b of the processing tank 12 through the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. Pure water is supplied, and the hydrogen fluoride water in the treatment tank 12 is replaced by pure water. Specifically, the sixth open / close valve 56 of the switching mechanism 50 is closed by a signal from the control mechanism 18. Thereby, mixing of the high concentration hydrogen fluoride water from the 2nd chemical | medical solution element source 62 with respect to the pure water sent from the pure water supply pipe 48 stops. Further, the first to fourth on-off valves 51, 52, 53, and 54 of the switching mechanism 50 remain open. As a result, as shown in FIG. 11, pure water is supplied to the treatment tank 12 through the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44 at a predetermined flow rate (for example, 80 l / min or more). Will be supplied.

  At this time, in the same manner as in Step 8-1 described above, pure water discharged from one discharge member of each pair of discharge members 72, 73, 74 facing each other and discharged from the other discharge member. The pure water collides in the gap between the wafer W and the wafer W. The second to fourth ejection members 72, 73, and 74 are arranged at different vertical positions. For this reason, the liquid (pure water) stored in the processing bath 12 is vigorously stirred in the first region 12a of the processing bath 12 (at least around the plate surface of the wafer W to be processed). As a result, the chemical solution of the ion level that has stayed around the wafer W can be reliably washed away from the periphery of the wafer W. Further, the deposits (particles) adhering to the wafer W can be removed from the wafer W.

  In the present embodiment, pure water is also supplied from the lower supply pipe 41 into the second region 12 b of the treatment tank 12. As described above, the pure water supplied to the second region 12b passes through the rectifying plate 28 and flows into the first region 12a as a substantially uniform upward flow (translational flow) over the entire surface of the rectifying plate 28. . Then, the pure water flowing into the first region 12a from the second region 12b causes the liquid flow in the first region 12a to be directed upward as a whole. Therefore, the chemical solution remaining around the wafer W and the deposits removed from the wafer W can be lifted upward in the processing tank 12 and further flowed out to the outer tank 15. Thus, the rinsing process of the wafer W can be performed more reliably, and the removed deposit can be prevented from adhering to the wafer W again.

  Such a process according to Step 7-2 is performed for several minutes, for example. When the process according to Step 7-2 is completed, the holding member 20 is raised, and the wafer W is discharged from the processing tank 12. As described above, a series of processes using the hydrogen fluoride water for the processing target wafer W is completed.

  According to the present embodiment as described above, the following control is performed by the control mechanism 18. That is, when the type of the chemical solution for the wafer W is set to ammonia water, pure water is stored and the ammonia water is supplied to the second region 12b with respect to the processing tank 12 in which the wafer W is stored. Ammonia water is caused to flow from the second region 12b to the first region 12a via the plate 28, and at this time, the rectification of the upward flow of the ammonia water is formed in the first region 12a, and the pure water in the treatment tank 12 is converted into this Replace with rectified ammonia water. On the other hand, when the type of the chemical solution for the wafer W is set to hydrogen fluoride water, the first region 12a and the second region 12b are stored in the processing tank 12 in which the pure water is stored and the wafer W is stored. By supplying hydrogen fluoride water to both, the pure water in the treatment tank 12 is replaced with hydrogen fluoride water. As described above, by changing the processing method according to the type of the chemical solution, when ammonia water having high reactivity with the wafer W is used, a substantially uniform upward flow (rectification) is formed around the wafer W. The uniformity of processing on the plate surface of the wafer W along the direction corresponding to the lateral direction when the wafer W is placed in the processing bath 12 can be ensured. On the other hand, when hydrogen fluoride water having low reactivity with respect to the wafer W is used, even when the hydrogen fluoride water around the wafer W is in a turbulent state, the hydrogen fluoride water around the wafer W is If the concentration is substantially uniform, it is possible to ensure the uniformity of the processing on the plate surface of the wafer W. For this reason, by supplying hydrogen fluoride water to both the first region 12a and the second region 12b, the processing tank 12 is provided. The hydrogen fluoride water can be stored in a short time, and the entire processing time can be shortened. Thus, each process with respect to the wafer W at the time of using each chemical | medical solution by making a processing method different about a several chemical | medical solution from which the reactivity with the wafer W differs based on the reactivity with the said wafer W. Performance can be improved.

  Further, the following control is further performed by the control mechanism 18. That is, when the type of the chemical solution for the wafer W is set to ammonia water, after the inside of the processing tank 12 is replaced with ammonia water, pure water is supplied to the second region 12b with respect to the processing tank 12, Pure water is caused to flow from the second region 12b to the first region 12a via the rectifying plate 28. At this time, the rectification of the upward flow of pure water is formed in the first region 12a, and the ammonia water in the treatment tank 12 is Replace with this rectified pure water. On the other hand, when the type of chemical solution for the wafer W is set to hydrogen fluoride water, after the inside of the processing tank 12 is replaced with hydrogen fluoride water, pure water is added to both the first region 12a and the second region 12b. To replace the hydrogen fluoride water in the treatment tank 12 with pure water. In this way, by changing the processing method according to the type of the chemical solution, when the inside of the processing tank 12 is replaced with ammonia water, a substantially uniform upward flow (rectification) of pure water is formed around the wafer W. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the wafer W along the direction corresponding to the horizontal direction when the wafer W is placed in the processing bath 12. On the other hand, when the inside of the treatment tank 12 is replaced with hydrogen fluoride water, pure water is supplied into the treatment tank 12 by supplying pure water to both the first region 12a and the second region 12b of the treatment tank 12. It can be stored in a short time, and the entire processing time can be shortened. At this time, a turbulent flow of pure water is formed in the first region 12 a of the processing tank 12, and the pure water in the processing tank 12 is agitated by this turbulent flow, and the cleaning effect of the pure water on the wafer W is achieved. In addition, the rinsing effect can be improved.

  Various modifications can be made to the above-described embodiment. For example, in the above-described embodiment, when the hydrogen fluoride water is supplied into the treatment tank 12, the hydrogen fluoride water is supplied to both the first region 12a and the second region 12b, so that Although the example which substituted water with hydrogen fluoride was shown, it is not restricted to this. Instead, pure water in the treatment tank 12 may be replaced with hydrogen fluoride by supplying hydrogen fluoride water only to the first region 12a of the treatment tank 12. In this case, the time required to store the hydrogen fluoride water in the treatment tank 12 is slightly longer than when hydrogen fluoride water is supplied to both the first region 12a and the second region 12b. However, compared with the case where ammonia water is supplied to the treatment tank 12, the supply amount of hydrogen fluoride water can be made sufficiently large. Similarly, hydrogen fluoride in the treatment tank 12 is replaced with pure water by supplying pure water to both the first region 12a and the second region 12b in a state where the hydrogen fluoride water is stored in the treatment vessel 12. Although the example to do was shown, it is not restricted to this. Instead, the hydrogen fluoride in the treatment tank 12 may be replaced with pure water by supplying pure water only to the first region 12a of the treatment tank 12.

  Further, when the pure water stored in the processing tank 12 is replaced with ammonia water, the chemical solution is supplied into the processing tank 12 only from the lower supply pipe 41, and the ammonia water stored in the processing tank 12 is purified. Although an example in which pure water is supplied into the treatment tank 12 only from the lower supply pipe 41 when replacing with water has been shown, the present invention is not limited thereto. While supplying a chemical | medical solution or a pure water from the lower side supply pipe | tube 41 in the processing tank 12, in parallel with at least any one of the 1st thru | or 3rd upper side supply pipes 42,43,44, a processing tank A chemical solution or pure water may be supplied into the inside 12. If the upward flow is dominant in the flow of the liquid in the first region 12a, or if at least the upward flow is formed around the wafer W accommodated in the first region 12a, the wafer W It can process substantially uniformly over the plate surface.

  Moreover, in embodiment mentioned above, although the example which supplies pure water in the process tank 12 from all the supply pipes 41, 42, 43, 44 during the process which concerns on Step8-1 or Step7-2 was shown, It is not limited to this. For example, the supply of pure water from the lower supply pipe 41 may be stopped. Further, pure water may be supplied from one or two of the first to third upper supply pipes 42, 43, 44. If the processing liquid is discharged at least around the wafer W accommodated in the first region 12a and the stored liquid is stirred around the wafer W, the rinsing process for the wafer W can be performed more reliably. it can. Moreover, the deposits can be removed from the wafer W with high removal efficiency.

  Furthermore, in the above-described embodiment, an example in which ammonia water is used as the first chemical liquid and hydrogen fluoride water is used as the second chemical liquid has been described. However, the present invention is not limited to this, and various types of first and second chemical liquids are used. The liquid can be used. At this time, for the two types of chemical solutions, a chemical solution having a relatively high reactivity with respect to the wafer W is set as the first chemical solution, and a chemical solution having a relatively low reactivity with respect to the wafer W is set as the second chemical solution. In addition, the process using the first chemical solution is a process in which the progress of the process must be managed with high accuracy, and the process using the second chemical solution must be managed with a high accuracy. It may be a good process.

  Furthermore, although the example which the substrate processing apparatus 10 contains the ultrasonic generation mechanism 30 was shown in embodiment mentioned above, it is not restricted to this, The installation of the ultrasonic generation mechanism 30 is arbitrary. On the other hand, each step in the substrate processing method described above, for example, a step of replacing pure water with the above-described chemical solution (Steps 5-1 and 5-2), a step of immersing the wafer W in the chemical solution (Steps 6-1 and 6- 6). In 2) and replacement (Steps 7-1 and 7-2) in which the chemical liquid is replaced with pure water, ultrasonic waves may be generated from the ultrasonic wave generation mechanism 30 to the processing liquid in the processing tank 12. According to such a method, particles can be removed from the wafer W to be processed with high removal efficiency.

  Furthermore, although the example which the rectifying member 28 consists of a rectifying plate which has many through-holes 29 was shown in embodiment mentioned above, it is not restricted to this, Various well-known rectifying members can be applied. Further, in order to form a uniform upward flow around the wafer W to be processed arranged in the first region 12 a of the processing tank 12, an auxiliary rectifying plate may be provided in the second region 12 b of the processing tank 12. Good. For example, a plate-like auxiliary is provided so as to face the liquid supply port (the discharge port 71a of the first discharge member 71 in the above-described embodiment) into the second region 12b via the lower supply pipe 41. By providing the current plate, the local flow along the supply direction of the liquid supplied via the lower supply pipe 41 can be canceled. Moreover, although the example which the process liquid flows in into the 2nd area | region 12b of the processing tank 12 via the 1st discharge member 71 from the lower side supply pipe 41 was shown, it is not restricted to this, The 1st discharge member 71 is abbreviate | omitted. You can also.

  Furthermore, in the above-described embodiment, the example in which the processing liquid is supplied into the first region 12a of the processing tank 12 from three different positions along the vertical direction has been described, but the present invention is not limited thereto. The processing liquid may be supplied into the first region 12a only from one or two positions along the vertical direction. Alternatively, the processing liquid may be supplied into the first region 12a from four or more positions along the vertical direction.

  In the above description, the example in which the substrate processing apparatus and the substrate processing method are applied to the etching process and the rinsing process for the wafer W is shown. However, the present invention is not limited to this. The present invention can be applied to the rinsing process, and can also be applied to various processes other than the etching process and the rinsing process.

FIG. 1 is a diagram showing a schematic configuration of an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a cross-sectional view taken along the line II-II in FIG. FIG. 3 is a first half of a flowchart showing control contents in the control mechanism of the substrate processing apparatus of FIG. FIG. 4 is the latter half of the flowchart showing the control contents in the control mechanism of the substrate processing apparatus of FIG. FIG. 5 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 6 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 7 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 8 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 9 is a diagram for explaining an embodiment of a substrate processing method according to the present invention. FIG. 10 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 11 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 12 is a diagram for explaining an embodiment of a substrate processing method according to the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 12 Processing tank 12a 1st area | region 12b 2nd area | region 18 Control mechanism 19b Recording medium 19c Setting device 19d Input device 28 Rectifying member (rectifying plate)
29 Through-hole 30 Ultrasonic wave generation mechanism 40 Liquid supply equipment 41 Lower supply pipe 42 First upper supply pipe 43 Second upper supply pipe 44 Third upper supply pipe 48 Pure water supply pipe 50 Switching mechanism W Substrate

Claims (19)

A substrate processing apparatus for processing a substrate to be processed by selectively immersing the substrate to be processed in either a first chemical solution or a second chemical solution,
A treatment tank including a first region for accommodating a substrate to be treated and a second region disposed below the first region;
A rectifying member provided in the processing tank to divide the first region and the second region and rectify the liquid sent from the second region to the first region;
A first supply unit for supplying a second chemical to the first region;
A second supply unit that selectively supplies either the first chemical solution or the second chemical solution to the second region;
A control mechanism for controlling each of the first supply unit and the second supply unit, and a setting unit configured to set which of the first chemical solution and the second chemical solution is used for the substrate to be processed And a control mechanism for adjusting the type of liquid supplied from each supply unit to each region based on the setting content in the setting unit, and
When the type of the chemical liquid set in the setting unit is the first chemical liquid, the control mechanism stores the processing liquid and stores the substrate to be processed in the second region. The first chemical solution is supplied to the first region from the second region to the first region via the rectifying member, and at this time, the first chemical solution is increased in the first region. When the substrate to be processed is processed with the first chemical liquid while forming a flow, and the type of the chemical liquid set in the setting unit is the second chemical liquid, the processing liquid is stored and the target liquid is stored. The substrate to be processed is processed by the second chemical solution by supplying a second chemical solution to the first region or both the first region and the second region with respect to the processing tank in which the processing substrate is accommodated. The first supply part and the front Being adapted to perform the control of the second feed unit,
The substrate processing apparatus characterized in that the reactivity between the first chemical solution and the substrate to be processed is higher than the reactivity between the second chemical solution and the substrate to be processed . The substrate processing apparatus according to claim 1, wherein the first chemical liquid is made of ammonia water, and the second chemical liquid is made of hydrogen fluoride water. The substrate processing apparatus according to claim 1 , wherein the processing liquid is water. The first supply unit and the second supply unit can supply water to the first region and the second region, respectively.
When the type of the chemical liquid set in the setting unit is the first chemical liquid, the control mechanism is configured to store the second chemical liquid in the processing tank in a state where the first chemical liquid is stored. Water is supplied to the region, and water is allowed to flow from the second region to the first region via the rectifying member, and at this time, an upward flow of water is formed in the first region, When the first chemical solution is replaced with the water and the type of the chemical solution set in the setting unit is the second chemical solution, the second chemical solution is stored in the processing tank. By supplying water to the first region or both the first region and the second region with respect to the treatment tank, the first chemical solution in the treatment tank is replaced with the first water. and performing control of the supply unit and the second feed unit The substrate processing apparatus according to any one of Motomeko 1 to 3. In the case where the type of the chemical liquid set in the setting unit is the first chemical liquid, the control mechanism stores the processing liquid in the interior when the substrate to be processed is processed by the first chemical liquid. The first chemical is supplied to the second region of the processing tank in which the substrate to be processed is accommodated in one region, and the first region is supplied from the second region to the first region via the rectifying member. Injecting a chemical liquid, replacing the processing liquid in the processing tank with the first chemical liquid while forming an upward flow at least in the vicinity of the substrate to be processed in the first region,
When the treatment liquid in the treatment tank is replaced with the first chemical liquid, the supply amount per unit time of the first chemical liquid supplied into the treatment tank is the first amount in the treatment tank. When the chemical solution is replaced with the water, the second supply unit is controlled to be substantially the same as the supply amount per unit time of the water supplied into the treatment tank. 5. The substrate processing apparatus according to claim 4, wherein: The rectifying member has a rectifying plate in which a large number of through holes are formed,
The liquid supplied to the second region, according to claim 1 to 5, characterized in that is adapted to flow in a commutation state to the first region via the through hole of the rectifying plate from the second region The substrate processing apparatus as described in any one of these. A plurality of ejection members provided in the first region of the treatment tank so that the arrangement positions along the vertical direction are different from each other;
The substrate according to claim 1, wherein the first supply unit supplies a liquid into the first region of the processing tank through the discharge member. Processing equipment. An input unit for inputting information on whether the first chemical solution or the second chemical solution is used for processing the substrate to be processed from the outside;
The setting unit according to claim 1, characterized in that the first chemical or the second setting either by whether performing the processing of the chemical substrate to be treated on the basis of the information inputted in the input unit The substrate processing apparatus as described in any one of thru | or 7 . The substrate processing apparatus according to claim 1 , further comprising an ultrasonic generation mechanism that generates ultrasonic waves in the liquid in the processing tank. A substrate processing method for processing a substrate to be processed by selectively immersing the substrate to be processed in either a first chemical solution or a second chemical solution,
A rectifying member is provided inside, and includes a first region located above the rectifying member and a second region located below the rectifying member, and the rectifying member is moved from the second region to the first region. A step of preparing a treatment tank for rectifying the liquid to be sent;
Storing the substrate to be processed in the first region of the processing tank, storing the processing liquid in the processing tank, and immersing the substrate to be processed in the processing liquid stored in the processing tank;
A step of setting which of the first chemical solution and the second chemical solution is used for the substrate to be processed;
When the type of the set chemical solution is the first chemical solution, the first chemical solution is supplied to the second region with respect to the processing tank in which the processing solution is stored and the substrate to be processed is stored, The first chemical solution is caused to flow from the second region to the first region via the rectifying member, and the substrate to be processed is formed while forming an upward flow of the first chemical solution in the first region. On the other hand, when the first chemical solution is processed and the type of the set chemical solution is the second chemical solution, the first treatment solution is stored in the processing tank and the substrate to be processed is accommodated in the first treatment solution. Processing the substrate to be processed with the second chemical solution by supplying a second chemical solution to the region or both the first region and the second region;
Equipped with a,
A substrate processing method , wherein the reactivity between the first chemical solution and the substrate to be processed is higher than the reactivity between the second chemical solution and the substrate to be processed . The substrate processing method according to claim 10, wherein the first chemical solution is made of ammonia water, and the second chemical solution is made of hydrogen fluoride water. The substrate processing method according to claim 10 , wherein the processing liquid is water. When the set type of the chemical liquid is the first chemical liquid, water is supplied to the second region with respect to the processing tank in a state where the first chemical liquid is stored in the processing tank, and the rectification is performed. Water is allowed to flow from the second region to the first region through a member, and at this time, the first chemical solution in the processing tank is rectified while forming an upward flow of water in the first region. If the set chemical type is the second chemical solution, the second chemical solution is stored in the treatment tank and the second chemical solution is stored in the treatment tank. 11. The method according to claim 10 , further comprising the step of replacing the second chemical solution in the treatment tank with water by supplying water to one region or both the first region and the second region. the substrate processing method according to any one of 12. When the set type of the chemical liquid is the first chemical liquid, when the substrate to be processed is processed by the first chemical liquid, the processing liquid is stored inside and the substrate to be processed is in the first region. The first chemical solution is supplied to the second region of the processing tank accommodated, and the first chemical solution is caused to flow from the second region to the first region via the rectifying member, and the first region. Replacing the treatment liquid in the treatment tank with the first chemical solution while forming an upward flow at least in the vicinity of the substrate to be treated,
In the step of replacing the treatment liquid in the treatment tank with the first chemical liquid, the supply amount of the first chemical liquid supplied into the treatment tank per unit time is the first amount in the treatment tank. The substrate processing method according to claim 13, wherein the amount of water supplied into the processing tank when the chemical solution is replaced with the water is substantially the same as the supply amount per unit time. The rectifying member has a rectifying plate in which a plurality of through holes are formed and the inside of the processing tank is divided into the first region and the second region,
The liquid supplied to the second region, claims 10 to 14, characterized in that so as to flow in a commutation state to the first region via the through hole of the rectifying plate from the second region The substrate processing method as described in any one of these. A step of inputting information on whether to process the substrate to be processed with the first chemical solution or the second chemical solution from the outside;
16. The method according to claim 10 , further comprising: setting whether to process the substrate to be processed with the first chemical liquid or the second chemical liquid based on the input information. The substrate processing method as described. The substrate processing method according to claim 10 , wherein an ultrasonic wave is generated in the liquid in the processing tank in at least one of the steps. A processing tank including a first area that accommodates a substrate to be processed and a second area disposed below the first area; and the first area and the second area that are provided in the processing tank are separated from the first area. A program that is executed by a control mechanism that controls a substrate processing apparatus including a rectifying member that rectifies liquid sent from two regions to the first region,
By being executed by the control mechanism,
Storing the substrate to be processed in the first region of the processing tank, storing the processing liquid in the processing tank, and immersing the substrate to be processed in the processing liquid stored in the processing tank;
A step of setting which of the first chemical solution and the second chemical solution is used for the substrate to be processed;
When the type of the set chemical solution is the first chemical solution, the first chemical solution is supplied to the second region with respect to the processing tank in which the processing solution is stored and the substrate to be processed is stored, The first chemical solution is caused to flow from the second region to the first region via the rectifying member, and the substrate to be processed is formed while forming an upward flow of the first chemical solution in the first region. On the other hand, when the first chemical solution is processed and the type of the set chemical solution is the second chemical solution, the first treatment solution is stored in the processing tank and the substrate to be processed is accommodated in the first treatment solution. Processing the substrate to be processed with the second chemical solution by supplying a second chemical solution to the region or both the first region and the second region;
Only including, the reactivity of the first chemical liquid and the substrate to be processed is possible to execute high such processing method than the reaction with the second chemical liquid and the substrate to be processed in the substrate processing apparatus A featured program. A processing tank including a first area that accommodates a substrate to be processed and a second area disposed below the first area; and the first area and the second area that are provided in the processing tank are separated from the first area. A recording medium on which a program executed by a control mechanism that controls a substrate processing apparatus provided with a rectifying member that rectifies liquid sent from two regions to the first region is recorded,
By executing the program by the control mechanism,
Storing the substrate to be processed in the first region of the processing tank, storing the processing liquid in the processing tank, and immersing the substrate to be processed in the processing liquid stored in the processing tank;
A step of setting which of the first chemical solution and the second chemical solution is used for the substrate to be processed;
When the type of the set chemical solution is the first chemical solution, the first chemical solution is supplied to the second region with respect to the processing tank in which the processing solution is stored and the substrate to be processed is stored, The first chemical solution is caused to flow from the second region to the first region via the rectifying member, and the substrate to be processed is formed while forming an upward flow of the first chemical solution in the first region. In the case where the first chemical solution is processed, and the treatment solution in the treatment tank is replaced with the first chemical solution that is rectified, while the type of the set chemical solution is the second chemical solution, The substrate to be processed is supplied by supplying a second chemical to the first region or both the first region and the second region with respect to the processing tank in which the processing solution is stored and the substrate to be processed is accommodated. Treating with the second chemical solution;
Only including, the reactivity of the first chemical liquid and the substrate to be processed is possible to execute high such processing method than the reaction with the second chemical liquid and the substrate to be processed in the substrate processing apparatus A characteristic recording medium.

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