JP2001223193A - Washing method and device of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide substrate washing technique that does not require any circulation of washing liquid, improves washing effect even with a small amount of chemical and achieves treatment at a room temperature, and hence can miniaturize a device, save energy, and reduce costs. SOLUTION: The method for washing a substrate using functional water as washing water consists of a process for dipping a wafer W in the washing water that is accommodated in treatment baths 1A and 1B, a process for supplying the washing water into the treatment baths 1A and 1B for overflowing, and a process for immediately draining the overflowed washing water without using any circulation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for wet cleaning a substrate, and more particularly to a substrate cleaning technique for cleaning a substrate using functional water as cleaning water.

[0002]

2. Description of the Related Art For example, a wet cleaning process of a semiconductor substrate (hereinafter, referred to as a wafer) is based on a process called RCA cleaning in order to remove various kinds of objects to be cleaned.
APM (ammonia peroxide), HPM (hydrochloric acid peroxide), DH
This is performed by appropriately combining cleaning liquids such as F (dilute hydrofluoric acid) and SPM (sulfuric acid / hydrogen peroxide) to form a sequence.

[0003] Since these cleaning liquids have relatively high concentrations in use, the cost and the amount of waste liquid to be treated are suppressed. Therefore, in a conventional cleaning apparatus, the cleaning liquid is circulated and used repeatedly. That is, as shown in FIG.
A cleaning tank is supplied from below and overflows from an upper opening, and is composed of a cleaning liquid supply system. The wafer W is immersed in the cleaning chamber 100 filled with the cleaning liquid by a transfer arm (not shown) and formed in the cleaning chamber 100. Wafer holding portions 101 each having a groove slightly wider than the thickness of the wafer W
When the cleaning liquid is pressure-fed by the circulation pump 103, the cleaning liquid passes through the filtration filter 104 and is supplied from the liquid supply port 102 provided at the lower part of the cleaning chamber to the cleaning chamber 10.
It flows into 0.

When the cleaning liquid further flows into the cleaning chamber 100 filled with the cleaning liquid, the excess cleaning liquid overflows from the upper opening of the cleaning chamber 100, and the overflow section 1
00b. At this time, an upward flow of the cleaning liquid is generated in the cleaning chamber 100, and the contaminants (to be cleaned) attached to the wafer surface are separated, carried away by the overflowing cleaning liquid, passed through the switching valve 106, the pump 103, and passed through the filter 104. To remove contaminants in the washing solution by filtration,
Only the filtered cleaning liquid returns to the cleaning chamber 100 again. By circulating the cleaning water for an appropriate processing time as described above, the wafer W is cleaned. The cleaning room 10
A switching valve 107 for drainage is attached to the bottom of
The switching valve 107, together with the switching valve 106, is driven and controlled by a control unit (not shown) for supplying the cleaning liquid to the processing tank and discharging the cleaning liquid.

Further, in a conventional wet cleaning process, a cleaning liquid is used at a high temperature, for example, 40 to 80 ° C. for APM or HPM, and 130 to 150 ° C. for SPM. Therefore, the circulation path of the supply system (in the illustrated example, between the filtration filter 104 and the liquid supply port 102)
The cleaning liquid heating means 105 is installed in the apparatus.

[0006]

However, in the conventional cleaning apparatus as described above, a circulation pump 103, a filtration filter 104 and a heating means 105 are provided in addition to the treatment tank.
The additional equipment such as is required, and the apparatus becomes large. In addition, as the diameter of the wafer becomes larger, not only the processing tank but also these additional facilities become larger. In addition, as these devices become larger, a large amount of chemicals, pure water, air and the like to be used are consumed, so that it is necessary to review space, energy, cost and the environment.

The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to eliminate the necessity of circulating a cleaning solution, to enhance the cleaning effect even with a small amount of a chemical solution, and to perform a treatment at room temperature. As a result, it is an object of the present invention to provide a substrate cleaning technique that can reduce the size of an apparatus and save energy and cost.

[0008]

In order to achieve the above object, a method for cleaning a substrate according to the present invention is a method for cleaning a substrate using functional water as cleaning water, wherein the substrate is contained in a processing tank. Immersing the substrate in the cleaning water,
The method is characterized by comprising a step of supplying the cleaning water into the treatment tank to overflow the processing tank, and a step of immediately draining the overflowed cleaning water without circulation.

As the functional water, hydrogen water in which hydrogen is dissolved in pure water or ozone water in which ozone is dissolved in pure water is selectively used. Further, an alkaline chemical solution is added to the former hydrogen water. In addition, it is also possible to further enhance the cleaning effect by using alkaline functional water, or by adding an acidic chemical solution to the latter ozone water to obtain acidic functional water.

Further, as a preferred embodiment, when a plurality of substrates are collectively cleaned by the above-described process, the number of substrates to be transported arranged at a regular arrangement pitch is reduced by a cleaning arrangement pitch smaller than the ordinary arrangement pitch. Then, the above-described steps are performed. When the substrate is transferred from the normal arrangement pitch to the cleaning arrangement pitch, the front-to-front and back-to-back surfaces of the adjacent substrates face each other, and the cleaning arrangement pitch P1 between the substrates whose front surfaces face each other and The cleaning arrangement pitch P2 between the substrates whose back surfaces face each other is set to be different from each other at an arrangement pitch smaller than the normal arrangement pitch, and the cleaning arrangement pitch P1 between the substrates whose front surfaces face each other faces the rear surface. It is advantageous to set it larger than the cleaning arrangement pitch P2 between the substrates.

Further, the apparatus for cleaning a substrate according to the present invention is suitably used for carrying out the above-described cleaning method, and includes a cleaning water supply means for supplying the cleaning water, and a cleaning water supply means for supplying the cleaning water. And a substrate transport means for transporting and immersing a substrate in the processing tank means, the substrate being provided with a structure for generating an upward flow in the cleaning water. The cleaning water supplied to the tank means is drained without being circulated after use.

As a preferred embodiment, a batch system for cleaning a plurality of substrates collectively is provided, and a substrate having a normal transfer number arranged at a normal arrangement pitch is provided at the substrate loading / unloading section. Transfer means is provided for transferring to a smaller cleaning array pitch. The transfer means has a structure in which, when transferring the substrates, the normal number of substrates arranged at the normal arrangement pitch face each other to the front surface and the front surface, and the back surface to the rear surface. The cleaning arrangement pitch P1 between the substrates facing each other and the cleaning arrangement pitch P2 between the substrates having the back surfaces facing each other are smaller than the normal arrangement pitch, and the P1 is set to be larger than P2. It is advantageous. Preferably, the processing tank means includes a megasonic irradiation means.

In the present invention, by using the above-mentioned functional water as the washing water, the amount of the chemical solution to be used can be minimized and the processing temperature can be at normal temperature. In addition, it is possible to construct a cleaning device that does not require a circulation pump, a filter, a heating means, and the like.

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings.

Embodiment 1 FIGS. 1 to 4 show a substrate cleaning apparatus according to the present invention. This apparatus is, specifically, a so-called batch-type cleaning apparatus for immersing a plurality of wafers W (a plurality of wafers in the paper surface direction in FIG. 1) in cleaning water that overflows to perform cleaning.
2 placed and fixed on the vertical wall Mc from the bottom Mb of the sink M in the sink M of the washing system defined by
The main components are the three treatment tanks 1A and 1B, the functional water supply devices 2A and 2B installed outside the cleaning system, and the megasonic transmitter 16 installed below the first treatment tank 1A. ing. The processing tanks are usually used side by side in two to four tanks depending on the cleaning recipe (two tanks in this embodiment).

The first and second processing tanks 1A and 1B have the same basic structure except for the material, and have cleaning portions 10, 2 having bottom portions 10a, 20a and open top portions, respectively.
0, overflow portions 10b, 20b provided over the entire circumference of the upper opening, and a flange portion 10 for mounting and fixing the processing tanks 1A, 1B on the vertical wall Mc of the sink portion M.
c, 20c and a holding groove 11 slightly wider than the thickness of the wafer W in order to hold a plurality of wafers W in the forest.
a, 21a provided with a plurality of wafer holding units 11, 21a
And liquid supply ports 12 and 22 on both sides of the bottoms 10 a and 20 a for supplying functional water as cleaning water into the cleaning chambers 10 and 20.

The supply ports 12 and 22 are provided with switching valves 13 and 23, respectively.
And 14 and 24, respectively, are connected to the functional water supply device and the ultrapure water supply equipment 3 by pipes, and the bottom portions 10a,
20a is an overflow section 1 via the switching valves 15 and 25.
It communicates with a drainage pipe that communicates with the bottoms of Ob and 20b.

In the processing tank 1A, a megasonic transmitter 16 for irradiating the wafer W with megasonic (ultrasonic wave of about 1 MHz) is provided with a seal packing 1 on the bottom Mb of the sink M.
The megasonic that is attached and transmitted in a watertight manner using 7 is irradiated onto the wafer W via pure water 18 filled in a bath surrounded by a vertical wall Mc from the bottom of the sink.

The material of the processing tank 1A is made of quartz glass for irradiating the wafer with megasonic.
Teflon resin such as PFA and PVDF is suitably used as the material of the above.

As shown in FIG. 4, the functional water supply units 2A and 2B include a gas dissolving unit 2a having a gas dissolving film therein, an ultrapure water supply unit 2b, and a gas supply unit 2b.
c, and a chemical liquid injection means 2d, and the gas supplied from the gas supply means 2c is dissolved in the ultrapure water supplied from the ultrapure water supply means 2b through the gas dissolving film,
Further, a small amount of a chemical solution is metered and supplied to generate functional water.

The functional water supply device can generate either an alkaline functional water or an acidic functional water in accordance with the purpose of use, and when producing the alkaline functional water, specifically,
When the gas to be used is hydrogen gas, ammonia water (NH ₄ OH) is suitably used as a chemical to be added, and acidic functional water is generated, specifically, the gas to be used is ozone gas, and hydrochloric acid ( HCl) is preferably used. In the present embodiment, the functional water supply device 2A generates alkaline functional water, and the functional water supply device 2B generates acidic functional water.

The alkaline functional water used in the present invention is:
Ammonia water concentration is about 1 ppm, hydrogen gas concentration is 1 ~
The cleaning ability was 1.5 ppm, and a result equivalent to the cleaning ability using a conventional APM liquid at room temperature was obtained. A conventional APM solution preferably has a concentration of 4.8%
Of NH ₄ OH, 4.8% H ₂ O _2, and ultrapure water at a volume ratio of 1: 1: 5, the concentration of ammonia water of the functional water is the same as that of the APM liquid. About 1 / 200,000
It is.

The acidic functional water used in the present invention comprises:
Hydrochloric acid concentration is about 0.1%, ozone gas concentration is 2-5p
pm, and the cleaning performance obtained at room temperature is comparable to the cleaning performance using the conventional HPM solution. Conventional HPM fluids preferably have a concentration of 4.4% HCl.
A concentration of 3.8% of H ₂ O ₂ and deionized water 1: 1: from a solution obtained by mixing a 5, the concentration of hydrochloric acid of the functional water HPM
It is 1/44 that of liquid.

An example of a process of cleaning a wafer according to a certain cleaning recipe using the substrate cleaning apparatus configured as described above will be described below.

1) The wafer W is immersed in the cleaning chamber 10 of the first processing tank 1A filled with the alkaline functional water by a cassette-less type wafer transfer means (not shown), and is immersed in the holding groove 11a of the wafer holding section 11. Hold and let stand.

2) The switching valve 13 automatically controlled by a control means (not shown) is opened, and alkaline functional water is supplied from the functional water supply device 2A to the liquid supply ports 12 on both sides of the bottom 10a of the cleaning chamber through a pipe. Then, overflow from the upper part of the cleaning chamber 10 to the overflow part 10b is performed. At the same time, the megasonic transmitter 16 is caused to transmit the wafer W
Irradiate megasonic.

3) At this time, the overflowing cleaning liquid, together with the particles lifted off from the wafer surface, is immediately drained from the overflow section 10b through a pipe, and is never used again.

4) After the above washing is continued for a certain processing time,
Closing the switching valve 13 to cut off the supply of the alkaline functional water,
Instead, the switching valve 14 is opened to supply ultrapure water from the ultrapure water supply facility 3 to replace and rinse the alkaline functional water.

5) After rinsing with ultrapure water, the wafer W
Is lifted from the cleaning chamber 10 of the processing tank 1A by the wafer transfer means, and is transferred from the functional water supply device 2B into the cleaning chamber 20 of the processing tank 1B already filled with acidic functional water.

6) The switching valve 15 is opened to drain the ultrapure water remaining from the bottom 10a of the cleaning chamber 10. After draining the entire amount, the switching valve 15 is closed and the switching valve 13 is opened. The cleaning chamber 10 is filled with alkaline functional water from the functional water supply means 2A to prepare for the next cleaning process.

7) The switching valve 23 is opened and the functional water supply device 2
The acidic functional water is supplied to the liquid supply ports 22 on both sides of the bottom portion 20a of the cleaning chamber through the pipe from B to overflow from the upper portion of the cleaning chamber 20 to the overflow section 20b.

8) At this time, the overflowing cleaning liquid is immediately discharged from the overflow section 20b through the pipe together with the heavy metal dissolved from the wafer surface, and is never used again.

9) After the above washing is continued for a certain processing time,
The switching valve 23 is closed to shut off the supply of the acidic functional water, and instead, the switching valve 24 is opened to supply the ultrapure water from the ultrapure water supply equipment 3 to replace and rinse the acidic functional water.

10) After rinsing with ultrapure water, the wafer W is transferred to the cleaning chamber 20 of the processing tank 2A by the wafer transfer means.
And transported to drying means (not shown) for drying.

11) The switching valve 25 is opened to drain the remaining washing liquid from the bottom 20a of the washing chamber 20, and after draining the entire amount, the switching valve 25 is closed and the switching valve 23 is opened to open the functional water. The cleaning chamber 20 is filled with the acidic functional water from the supply unit 2B to prepare for the next cleaning process.

12) The required number of wafers are cleaned by repeating the above cleaning process.

As described above, in the present embodiment, by using functional water having a low concentration at room temperature,
No circulating system such as a circulating pump, filter or heating means is required,
The cleaning device can be downsized, and a cleaning power comparable to that of a conventional APM liquid or HPM liquid can be obtained.

The functional water of the present embodiment includes alkaline functional water obtained by adding an alkaline chemical to hydrogen water.
Although acidic functional water obtained by adding an acidic chemical to ozone water is used, depending on the purpose, only hydrogen water or ozone water without adding an alkaline or acidic chemical as described above may be used as functional water. .

Embodiment 2 This embodiment is shown in FIGS. 5 to 7 and is a modification of Embodiment 1 described above. Specifically, as shown in FIG. 5, a cleaning chamber having a shape without the overflow portions 10b and 20b of the cleaning chambers 10 and 20 according to the first embodiment is used. , 20, and flows to the bottom of the drain M, and is drained from the drain Md. Other configurations and operations are the same as those in the first embodiment, and a description thereof will not be repeated.

According to the present embodiment, since there is no overflow section at the top of the cleaning chamber, the cleaning chamber can be downsized, and a piping system communicating with the bottom of the overflow section is not required. And the manufacturing cost can be reduced.

Embodiment 3 In this embodiment, a so-called cassetteless cleaning method (in particular, in which a plurality of (in this embodiment, 52) wafers W) are directly held by a pair of left and right chucking hands 50 and transported. As shown in FIGS. 8 to 21, the processing tank used in the process (acid cleaning) further embodies the processing tank 1 </ b> B of the first embodiment, and is roughly divided into four parts. That is, one processing tank is formed by combining the upper tank 40, the lower tank 41, the wafer receptor (wafer holding unit) 44, and the receptor mounting unit 42 for fixing the wafer receptor 44 in the processing tank. Is done.

The upper tank 40 is formed by molding using a resin material such as PFA or PP, and is provided over the entire periphery of the upper opening and the entire periphery of the lower opening 40a. Flange part 40c
And a drain port 40d provided at the bottom of one overflow section. Overflow part 40b
Is formed such that the overflowing cleaning liquid gathers at the portion provided with the drainage port 40d. A plurality of holes 40e for assembling and fixing are formed in the flange portion 40c.

Similarly to the upper tank 40, the lower tank 41 is formed by molding using a resin material such as PFA or PP, and has a flange portion 41 provided over the entire periphery of the upper opening 41a.
b, a bottom part 41c inclined so that the cleaning liquid collects in the middle when draining, a drain port 41d provided substantially at the center of the bottom part, and liquid supply to both left and right sides (see FIG. 10) of the bottom part 41c. It mainly comprises an opening 41e and a plurality of slits (holes) 41f communicating with the liquid supply opening 41e and for uniformly supplying the cleaning liquid into the cleaning chamber. Flange part 41b
Are provided with a plurality of screw portions 4 for fixing the upper tank 40.
1g and a plurality of bolt holes 41h for mounting and fixing the entire processing tank to the vertical wall Mc of the sink.

The wafer receptor 44 includes an upper tank 40 and a lower tank 4.
As in the case of FIG. 1, it is formed by molding using a resin material such as PFA or PP, and as shown in detail in FIGS. 14 to 17, when viewed from above, a hollow portion surrounded by left and right side walls 44a and front and rear side walls 44b (See FIG. 14), extends from the left and right side walls 44a toward the wafer W, and holds, at each of its distal ends, a portion below the center of the wafer W in the circumferential direction of the wafer W. A pair of left and right wafer holding bars 44c, 44 having a plurality (56 in this embodiment) of holding grooves G
d and through-holes 44e, 4d provided in each of the wafer holding bars 44c, 44d to enable the rising of the cleaning liquid.
4f and positioning holes 4 provided on the front and rear side walls 44b to be fitted with positioning protrusions 42d of the receptor mounting portion 42 described later.
Mainly 4 g.

The holding groove G holds the wafer W on its surface (mirror surface).
Wa and the front surface (mirror surface) Wa, and the back surface Wb and the back surface Wb are held facing each other, and have a width T slightly larger than the thickness S of the wafer W as shown in detail in FIG. Rectangular groove G1 for holding wafer W in a forest
And a guide portion G2 that spreads at an angle from the front end of the rectangular groove G1 toward the center of the wafer W in order to accurately store the wafer W in the rectangular groove G1. A pitch (cleaning arrangement pitch) P1 at which Wa and the front surface Wa face each other is different from a pitch (cleaning arrangement pitch) P2 at which the back surface Wb and the back surface Wb face each other, and the pitch P1 is set to be larger than the pitch P2. However, pitch P1
And the pitch P2 are both set smaller than the normal arrangement pitch (for example, 6.35 mm for an 8 ″ wafer).

As described above, the surface Wa of the wafer W and the surface Wa
Is set larger than the pitch P2 between the back surface Wb and the back surface Wb, the amount of the cleaning liquid flowing between the front surfaces of the wafers W becomes larger than the amount flowing between the back surfaces. Can be prevented from wrapping around the surface of the wafer W, and the cleanliness of the wafer W can be increased.

In this embodiment, the inclination angle of the holding portion G2 is set to be larger than the inclination angle R, where Q is the distance between the wafer front surfaces and R is the distance between the back surfaces of the wafers.

The receptor mounting portion 42 is also made of PFA or P
As shown in detail in FIGS. 18 to 21, a horizontal base 42 a in which a large number of saw holes 42 b for rectifying the cleaning liquid are formed by molding using a resin material such as P, and the horizontal base 42 a It mainly includes left and right vertical walls 42c, front and rear vertical walls 42d, and positioning projections 42e provided on the upper surfaces of the front and rear vertical walls 42d and fitted with the positioning holes 44g of the wafer receptor 44 described above. Become.

A storage groove 42f for a seal packing 43, which will be described later, is formed around the entire end face of the horizontal base 42a. The left and right vertical walls 42c and the front and rear vertical walls 42d are provided to prevent the accumulation of the cleaning liquid. Through holes 42g and 42h are provided as appropriate.

The above components are assembled as shown in FIGS. 11 to 12 to complete one processing tank. Specifically, it is assembled by the following steps.

1) Storage groove 42f of receptor mounting part 42
And seal packing 43 made of soft vinyl chloride or the like.
(See FIG. 13).

2) Place the receptor mounting part 42 on the lower tank 41.

3) As shown in FIG. 21, a positioning hole 44g of the wafer receptor 44 is fitted to a positioning projection 42e of the receptor mounting portion 42, and the wafer receptor 44 is mounted on the receptor mounting portion 42.

4) Cover the temporarily assembled one with the upper tank 40 to cover a plurality (12 in the present embodiment).
The flange portion 40c of the upper tank 40 and the flange portion 41b of the lower tank 41 are
The horizontal base 42a is sandwiched and fixed.

As described above, the processing tank is divided into four parts, namely, the upper tank, the lower tank, the wafer receptor, and the wafer mounting portion, with a simple structure, so that the shape and material of each part can be variously changed. Selectable combinations are possible. In addition, there is an advantage that it is easy to replace only a damaged portion, for example, only the wafer receptor 44 shaved by a wafer.

Fourth Embodiment This embodiment is a processing tank used for cassetteless cleaning (particularly, alkali + megasonic cleaning) as in the third embodiment, as shown in FIGS. The processing tank 1A is further embodied, and is roughly divided into four parts as in the third embodiment. That is, one processing tank is formed by combining the upper tank 40, the lower tank 31, the wafer receptor (wafer holding unit) 44, and the receptor mounting unit 32 for fixing the wafer receptor 44 in the processing tank. Is done.

The upper tank 40 is completely the same in material and shape as the third embodiment, and the description is omitted.

The lower tank 41 is made of quartz glass.
A flange portion 31b provided over the entire circumference of the upper opening 31a, a bottom portion 31c inclined so that the cleaning liquid collects on the right side during drainage (in FIG. 23), and a right and left front and rear portions of the bottom portion 31c. And a liquid supply port 31e provided on each of the left and right sides of the bottom 31c, and communicates with the liquid supply port 31e to uniformly supply the cleaning liquid into the cleaning chamber. Mainly provided with a plurality of slits (holes) 31f. The flange portion 31b is provided with a plurality of screw portions 31g for fixing the upper tank 40 and a plurality of bolt holes 31h for mounting and fixing the entire processing tank on the vertical wall Mc of the sink.

The material and shape of the wafer receptor 44 are completely the same as those of the third embodiment, and the description is omitted.

The receptor mounting portion 32 is formed by molding using a resin material such as PFA or PP, and
And left and right vertical walls 32 erected from the horizontal base 32a.
c, front and rear vertical walls 32d, and positioning projections 32e provided on the upper surfaces of the front and rear vertical walls 32d to be fitted into the positioning holes 44g of the wafer receptor 44 described above. In the present embodiment, since the megasonic transmitter 16 is provided to irradiate the wafer W with megasonic, the horizontal base 32a does not have the mushrooms that existed in the third embodiment, and the vertical walls 32c, An opening 32b is provided near 32d.

The wafer cleaning process using the substrate cleaning apparatus configured as described above is the same as the alkali cleaning process of the first embodiment, and the description is omitted.

Embodiment 5 In this embodiment, a so-called exclusive cassette type cleaning is used in which a plurality of (in this embodiment, 52) wafers W are transported and processed by a pair of right and left cassette hands 51 together with a cleaning-dedicated cassette. A processing tank used for (particularly, acid cleaning), as shown in FIG. 24 to FIG. 27, is roughly divided into four parts and assembled as in the second embodiment. That is, one processing tank is formed by combining the upper tank 40, the lower tank 41, the dedicated cassette 54, and the receptor mounting portion 42 for temporarily fixing the dedicated cassette 54 in the processing tank.

The upper tank 40, the lower tank 41, and the receptor mounting part 42 are completely the same in material and shape as those in the third embodiment, and the description thereof is omitted.

The special cassette 54 is formed by molding using a resin material such as PFA or PP, and as shown in FIGS.
Same as 4. That is, the shape below the YY axis (see FIGS. 26 and 27) in the drawing is exactly the same as that of the wafer receptor 44 of the third embodiment, and the same reference numerals are given in parentheses in the drawing. The description is omitted.

On the upper side of the Y-Y axis, a handle 54h is formed on the left and right as a dedicated cassette for washing to facilitate transport, and the handle 54h is formed on the hand plate 51a of the cassette hand 51. The three projections 51b are each formed with three round holes 54i for fitting therein.

The cleaning process in the case of using the special cassette 54 configured as described above is as follows, if a specific example is given.

1) A plurality of sheets (52 in this embodiment)
The dedicated cassette 54 in which the wafers W are held in the standing grooves in the holding grooves 54c and 54d is immersed in the processing tank 40 filled with the acidic functional water by using the cassette hand 51,
The dedicated cassette 54 is placed on the receptor placement part 42, and the positioning hole 54 g of the dedicated cassette 54 is fitted to the positioning protrusion 42 e of the receptor placement part 42.

2) The cassette hand 51 is moved in parallel in the direction of arrow A (see FIG. 24) and contracted, and the hand plate 51a is contracted.
Of the three projections 51b to the handle 54 of the dedicated cassette 54.
Then, the cassette hand 51 is lifted up and separated from the processing tank 40.

3) Subsequent processing steps are the same as paragraphs 6) to 11) in the description of the processing steps of the first embodiment.
Description is omitted.

4) After the end of the rinsing, the cassette hand 51 is immersed in the processing tank 40, moved parallel to the direction of the arrow B and opened, and the three projections 51b of the hand plate 51a are moved to the handle 54h of the special cassette 54 by the handle 54h. Fit into the round hole 54i,
Thereafter, the cassette hand 51 is raised and separated from the processing tank 40.

As described above, the exclusive cassette 54 of the present embodiment and the wafer receptor 44 of the third embodiment have exactly the same shape except for a part, and it is not necessary to separately manufacture a molding die. It is only necessary to use a mold for the dedicated cassette 54. That is, when manufacturing the wafer receptor 44, it can be obtained by cutting off the handle 54h of the molded dedicated cassette 54.

Embodiment 6 This embodiment relates to a wafer transfer means and a wafer pitch conversion means which are employed in the present invention and are installed in a wafer loading / unloading section. This will be described in detail. That is, specifically, the transfer unit 60 and the pitch conversion unit 70 are installed side by side in the wafer loading / unloading unit LU adjacent to the cleaning processing unit WT, and the wafer W is transferred by the chucking hand 52. Means 60
Then, the wafer is transferred from the pitch conversion unit 70 to the processing tank 40 of the cleaning unit WT by the chucking hand 50 in a cassetteless manner (see FIG. 28).

The transfer means 60 includes the chucking hand 52
At the same time, a plurality of wafers (26 in the present embodiment) accommodated in the carrier cassette CC at a pitch of 6.35 mm (normal transport pitch in the case of 8 ″ wafers) are face-to-face (front and front surfaces, back surface of wafers). And the back surface).

More specifically, the transfer means 60 holds a plurality of (26) wafers in a direction perpendicular to the plane of FIG. 28 at the same pitch as the 6.35 mm pitch of the carrier cassette CC. Therefore, a plurality of (26) grooves slightly wider than the thickness of the wafer are formed in the wafer holding portion 60a, and the wafer holding portion 60a is lifted to push up the wafer W from the carrier cassette CC to separate it. ,
Alternatively, conversely, the wafer holding unit 60a is lowered, and up and down driving means (not shown) for storing the wafers W in the carrier cassette CC, and half of the 26 wafers, that is, 13 wafers W are inverted. In order to bring the wafer W into a face-to-face state, the apparatus mainly includes a rotation driving unit (not shown) for rotating the wafer holding unit 60a by 180 °.

The vertical drive means mainly comprises a drive source such as a well-known cylinder or motor and a vertical guide means, and the rotary drive means is a rotary cylinder or motor which is also commonly used. And a rotation guide means.

The pitch conversion means 70 includes a base plate 7
1, two housing plates 72 erected and fixed to the base plate 71, four slide shafts 73 horizontally suspended and fixed between the two housing plates 72, and one wafer W. A plurality of (in this embodiment, 52) guide units 74 which are held substantially vertically and slide on the four slide shafts 73, and the two housing plates via a bearing 75 and a shaft supporting means 76. An opening / closing ball screw 77 rotatably suspended on 72, and a ball nut 78 for a right-hand screw, which is rotatably driven in the axial direction by rotating and driving the opening / closing ball screw 77, and a left-hand screw , And a joint unit 80 for connecting the guide units 74 to each other.

The joint unit 80 is shown in FIGS.
As shown in detail in FIG. 4, between the guide pins 81 made of a stainless material or the like, which are press-fitted two by two at the left and right end surfaces of each guide unit 74, and the guide pins 81 of the adjacent guide units 74. And a link 82 slidably attached thereto, and a washer 83 for holding the link 82 so as not to come off the guide pin 81.

Each of the guide units 74 is a thin plate made of a resin material such as PFA or PP by molding or cutting, and has a body portion for sliding on four slide shafts 73. A sliding hole 74c is formed, and a round hole 74d is formed at the center of the four sliding holes 74c so as not to contact the open / close ball screw 77. However, in FIG. 29, only the ball nut 78 and the ball nut 7 are provided only in the guide units 74 at the front and rear ends.
9 is formed with a screw hole 74e.

At the upper end of each guide unit 74,
A rectangular groove 74a having a width T slightly larger than the thickness S of the wafer W, and ultimately holding the wafer W in a forest state;
In order to accurately place the wafer W in the rectangular groove 74a, a guide portion 74b that extends at an angle from the tip of the rectangular groove 74a toward the center of the wafer W is formed, and the rectangular groove 74a and the guide portion 74b are formed. Are formed between adjacent guide units. That is, assuming that the thickness of the guide unit 74 is Z, the width of the rectangular groove 74a is T as described above, and the distances from the end surface of the guide unit 74 to the end surface of the rectangular groove 74a are X and Y, there is a relationship of Z = X + T + Y. However, for example, when the distance from the front end face of the first guide unit 74 (the right side in FIG. 34) to the front end face of the rectangular groove 74a is X, the distance between the front end face of the second guide unit 74 and the rectangular groove 74a is Distance to front end face is Y
Then, the guide units 74 are alternately arranged.

The dimensions of each link 82 are set to be the same, and the center position of each guide pin 81 matches the center position of the rectangular groove 74a of each guide unit 74. Are the guide pins 81
Is different between the adjacent guide units 74. Conversely, when the respective guide units 74 are separated from each other, the center pitch of each of the guide pins 81 is exactly the same between the adjacent guide units 74. Therefore, when each guide unit 74 is separated, the distance of the separated gap (indicated by U and V in FIG. 33) between the adjacent guide units 74 is different.

According to the present embodiment, when the guide units 74 are separated from each other, the pitch between the wafers W is the same. Can be alternately changed between adjacent wafers W.

For example, when processing an 8 ″ (diameter) wafer, the thickness Z of each guide unit 74 is set to 4 mm.
The width dimension of the rectangular groove 74a is 0.85 mm, and the X dimension is 1.3.
If the size of each link 82 is determined such that the value of the Y dimension is 1.825 mm, the value of the gap U is 1.85 mm, and the value of the gap V is 2.85 mm, then each guide unit 7
When the wafers 4 are separated from each other, the pitch between the centers of the wafers W is 6.
When the guide units 74 are in close contact with each other, the center-to-center pitch of the wafer W becomes 4.5 mm and 3.5 mm alternately. In this case, the center-to-center pitch at which the surfaces of the wafer W face each other is 4 mm. The pitch is set to 3.5 mm, and the center-to-center pitch at which the back surface of the wafer W faces each other is 3.5 mm.

For example, when processing a 12 ″ (diameter) wafer, the thickness Z of each guide unit 74 is 5 mm, the width of the rectangular groove 74a is 1.00 mm, the X dimension is 1.75 mm, and the Y dimension is 2 If the dimensions of each link 82 are determined so that the value of the gap U is 4.5 mm and the value of the gap V is 5.5 mm, each guide unit 74 can be obtained.
Are separated from each other, the pitch between the centers of the wafers W is 10.
When each guide unit 74 comes into close contact with each other, the pitch between the centers of the wafers W is 5.5 mm and 4.
In this case, the center-to-center pitch at which the front surface of the wafer W faces each other is set to 5.5 mm, and the center-to-center pitch at which the back surface of the wafer W faces each other is set to 4.5 mm.

The open / close ball screw 77 is shown in FIG.
A ball screw with a right-hand thread on the shaft and a left-hand screw on the front, and a ball nut 78 with a right-hand screw on the shaft and a ball with a left-hand screw on the shaft. A nut 79 is attached so as to be relatively progressive and retractable.

The pulley 87 fixed to the shaft end
The stepping motor 86 is rotated clockwise when viewed from the output shaft via a belt 88 and a pulley 89 fixed to an output shaft of a stepping motor 86 fixed to a motor plate 85 via a spacer 84 to a base plate 71 ( When rotated clockwise, the ball nut 78 and the ball nut 79 progress toward each other, and conversely, when the stepping motor 86 is rotated counterclockwise (counterclockwise), the ball nut 78 and the ball nut 79 are rotated. And retreat in a direction away from each other.

In FIG. 29, the ball nut 78 is fixed only to the rearmost guide unit 74, the ball nut 79 is fixed only to the frontmost guide unit 74, and the other guide units 74 are A hole 74d larger than the shaft diameter of the opening / closing ball screw 77 is formed and does not contact the opening / closing ball screw 77. Therefore,
Even if the opening / closing ball screw 77 is rotated, only the guide units 74 at the front and rear ends move, and the other guide units 74 do not move and try to stop at the original position. However, since the guide units 74 are connected by the joint unit 80, the guide units 74 can be extended and contracted like an accordion in conjunction with the movement of the guide units 74 at the front and rear ends.

The chucking hand 52 has an opening / closing mechanism 53.
The wafer W is chucked by invoking the left and right hand plates 52a fixed to the center of the rotation axis 53a of the opening / closing mechanism 53 in the direction of the arrow J, and the transfer mechanism 60 (not shown) is used to chuck the wafer W. The wafer W is transported to the conversion means 70. At the tip of each hand plate 52a, two wafer holding bars 52b and 52c are formed vertically, and each of the wafer holding bars 52b and 52c has 13 wafers. Wafer receptor 44 for holding W
The holding grooves G similar to the holding grooves G and the wafer passage portions H through which twelve wafers W pass are formed alternately.

The chucking hand 50 chucks the wafer W by moving the two right and left hand plates 50a fixed to an opening / closing mechanism (not shown) that opens and closes in parallel in the direction of arrow L. The transfer mechanism (not shown) transfers the wafer W from the pitch conversion means 70 to the processing tank 40 and between the processing tanks.
0a, two upper and lower wafer holding bars 50b,
The wafer holding bars 50b, 50c are formed.
Are formed with holding grooves G for holding 56 wafers W, respectively.

The procedure for processing a wafer in a cassetteless manner by using the wafer transfer means 60 and the pitch conversion means 70 configured as described above is as follows.

1) The wafer W in the carrier cassette CC placed manually or by the feeding means at the transfer position of the wafer loading / unloading section LU is transferred to the wafer holding section 60 of the transferring means 60.
a is lifted up and separated from the carrier cassette CC.

2) Thirteen of the 26 wafers W that are stationary at a position separated from the carrier cassette CC are chucked by the chucking hand 52, transported, and transferred to the pitch conversion means 70. At this time, every other wafer W is held in a forest from the frontmost guide unit 74.

3) The wafer holding unit 60a is turned by 180 ° in the direction of arrow K to be inverted.

4) The chucking hand 52 is retracted by one pitch (6.35 mm in the direction toward the sheet of FIG. 28), and the remaining 13 wafers W are chucked and transferred.
It is transferred to the pitch conversion means 70. At this time, every other wafer W is inserted from the second guide unit 74 from the end. However, since the chucking hand 52 is provided with the wafer passage portion H, the wafer W previously held in a forest shape is provided. Without interfering with each other, the wafers W are held in a forest between the wafers W, and the wafers W are in a face-to-face state.
(See FIGS. 29 and 30)

5) The empty carrier cassette CC is removed manually or by a feeding means, and the second carrier cassette CC is placed at the transfer position.

6) Wafer W in carrier cassette CC
Is lifted up from the wafer holding portion 60a of the transfer means 60 to be separated from the carrier cassette CC.

7) Thirteen of the 26 wafers W that are stationary at a position separated from the carrier cassette CC are chucked by the chucking hand 52 and retracted by one carrier cassette, and at the same time, are moved to the pitch conversion means 70 side. Convey and transfer. At this time, every other wafer W is held in a stand shape from the 27th guide unit 74 from the end.

8) The chucking hand 52 is retracted by one pitch, and the remaining 13 wafers W are chucked and transported, and transferred to the pitch conversion means 70. At this time, every other wafer W is inserted from the 28th guide unit 74 from the end, but since the chucking hand 52 is provided with the wafer passage portion H, the wafer W held first Without interfering with each other, the wafers W are held in a forest between the wafers W, and the wafers W are in a face-to-face state.

9) The stepping motor 86 is rotated clockwise as viewed from the output shaft, and the open / close ball screw 77 is rotated clockwise via the pulley 89, the belt 88, and the pulley 87 to bring the ball nut 78 and the ball nut 79 closer to each other. In the direction you want. By this operation, the guide pin 81 and the link 82 of each joint means 80 become free, and each guide unit 74 slides on the slide shaft 73 by being pushed by the guide units 74 at the right and left ends. Approach like.

10) When each of the guide units 74 comes close to and comes into close contact with each other, it is detected by a sensor (not shown) (not shown) and the stepping motor 86 is stopped.

11) Each of the guide units 74 holds the 52 wafers W held in a forest-like state by the chucking hand 50.
Then, all 52 sheets are chucked and transported to the processing tank 4.
Then, the wafer is immersed in the wafer and transferred to the wafer receptor 44. At this time, the wafer W is held by the holding groove G of the wafer receptor 44 in a forest-like state, and is cleaned.

12) After the cleaning processing, the wafer W is returned to the original carrier cassette CC cleaned in another step by following the steps reverse to the above steps, and a series of cleaning processing steps is completed.

The above-described embodiment merely shows a preferred embodiment of the present invention, and the present invention is not limited to this, and various design changes can be made within the scope.

For example, in the first embodiment, hydrochloric acid was used as a chemical solution to be added when producing acidic functional water. However, hydrofluoric acid can be used instead of DHF.
Alternatively, sulfuric acid may be added and used as a substitute for SPM.

In the third embodiment, the inclination angle of the holding portion G2 is set to be larger between the front surfaces of the wafers than between the back surfaces of the wafers. However, both may be set to the same angle.

In the third and fourth embodiments, a plurality of slits for uniformly supplying the cleaning liquid to the liquid supply port are formed, but a plurality of round holes may be formed instead of the slits.

In the sixth embodiment, the type in which the chucking hand 52 opens and closes by instigating it, and the type in which the chucking hand 50 opens and closes by moving in parallel, is adopted.

Further, in the pitch conversion means 70 of the sixth embodiment, the open / close ball screw is used as the moving means for changing the pitch of each guide unit 74, but a simple open / close screw may be used.

[0108]

As described in detail above, according to the present invention,
While cleaning the substrate using functional water as cleaning water,
The cleaning step includes a step of immersing the substrate in the cleaning water contained in the processing tank, a step of supplying the cleaning water into the processing tank to overflow, and a method of circulating the overflowed cleaning water. It does not require the circulation of a cleaning solution, increases the cleaning effect even with a small amount of a chemical solution, and enables processing at room temperature without the need for circulation of the cleaning solution. As a result, it is possible to reduce the size of the device and save energy, It is possible to provide a substrate cleaning technique that enables cost reduction.

That is, by using the functional water as the washing water, the amount of the chemical solution to be used can be minimized and the processing temperature can be set at room temperature, so that there is no need to circulate the washing liquid. This eliminates the need for heating and heating means, and makes it possible to reduce the size of the cleaning device.

Also, the substrates of the normal number of substrates arranged at the normal arrangement pitch are faced to each other with the front surface and the front surface, and the back surface and the back surface thereof facing each other.
1 and the arrangement pitch P2 between the substrates facing each other on the back side, and the arrangement pitches P1 and P2 between the substrates are both changed to an arrangement pitch smaller than the normal arrangement pitch and n times the number of normal conveyances. By performing the cleaning process, it is possible to prevent particles and the like from flowing from the back surface of the wafer to the front surface of the wafer, thereby increasing the cleaning effect between the front surfaces of the wafer, making the processing tank smaller, and combining with the use of functional water. Further, it is possible to further reduce the size of the cleaning device, and to provide a substrate cleaning device that meets the needs of space saving, energy saving and cost saving.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a substrate cleaning apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic configuration diagram showing an enlarged view of one processing tank side of the cleaning apparatus.

FIG. 3 is a schematic configuration diagram showing, on an enlarged scale, another processing tank of the cleaning apparatus.

FIG. 4 is a schematic configuration diagram of a functional water supply device used in the cleaning device.

FIG. 5 is a schematic configuration diagram of a substrate cleaning apparatus according to a second embodiment of the present invention.

FIG. 6 is a schematic configuration diagram showing an enlarged view of one processing tank side of the cleaning apparatus.

FIG. 7 is a schematic configuration diagram showing, on an enlarged scale, another processing tank of the cleaning apparatus.

FIG. 8 is a plan view showing a processing tank according to a third embodiment of the present invention.

FIG. 9 is a side sectional view taken along a line II of FIG. 8, showing the processing tank.

10 is a view showing the same processing tank, and is a front sectional view taken along the line II-II of FIG. 9;

FIG. 11 is a diagram illustrating an assembling process of the processing tank.

FIG. 12 is a diagram for explaining an assembling process of the processing tank;
FIG. 3 is a front sectional view taken along line III-III of FIG.

FIG. 13 is a plan view of a seal packing used when assembling the processing tank.

FIG. 14 is a plan view of a wafer receptor used in the same processing tank to hold wafers in a forest.

FIG. 15 is a view showing the same wafer receptor, and FIG.
FIG. 4 is a side sectional view taken along a line IV.

FIG. 16 is a view showing the same wafer receptor, and FIG.
FIG. 5 is a front sectional view taken along line VV of FIG.

FIG. 17 is a view showing a groove of the wafer receptor, and FIG.
FIG.

FIG. 18 is a plan view of a receptor mounting portion that mounts and holds a wafer receptor in the processing bath.

FIG. 19 is a view showing the receptor mounting portion,
FIG. 6 is a side sectional view taken along line VI.

FIG. 20 is a view showing the receptor mounting section,
FIG. 7 is a front sectional view taken along line -VII.

FIG. 21 is a diagram showing the receptor mounting portion, and is an enlarged view of a portion Q in FIG. 19;

FIG. 22 is a front sectional view showing a processing tank according to the fourth embodiment of the present invention (the upper tank is made of resin and the lower tank is made of quartz).

FIG. 23 is a side sectional view taken along the line VIII-VIII of FIG. 22, showing the processing tank.

FIG. 24 is a front sectional view showing a dedicated cassette type processing tank according to a fifth embodiment of the present invention.

FIG. 25 is a plan view showing the exclusive cassette.

FIG. 26 is a view showing the dedicated cassette, and IX-IX in FIG. 25;
FIG. 3 is a side sectional view taken along a line.

FIG. 27 is a view showing the exclusive cassette, taken along line XX of FIG. 26;
FIG. 3 is a side sectional view taken along a line.

FIG. 28 is a front view illustrating the operation of a cassetteless wafer transfer and pitch conversion unit according to a sixth embodiment of the present invention.

FIG. 29 is a side view taken along line XI-XI of FIG. 28 for explaining the operation of the wafer transfer and pitch conversion means.

30 is a view for explaining the operation of the wafer transfer and pitch conversion means, and is a plan sectional view taken along line XII-XII of FIG. 29;

FIG. 31 is a side view for explaining the operation of the pitch conversion means.

FIG. 32 is a view for explaining the operation of the pitch conversion means, and is a front sectional view along the line XIII-XIII in FIG. 31;

FIG. 33 is a view for explaining the positional relationship between the guide unit and the joint in a state where the pitch conversion means is opened, and FIG.
(A) is an enlarged view of a portion R in FIG. 31, and (b) is a right side view thereof.

FIG. 34 is a diagram illustrating a positional relationship between a guide unit and a joint and a pitch relationship between wafer grooves of the guide unit when the pitch conversion unit is closed.

FIG. 35 is a front sectional view showing a schematic configuration of a conventional substrate cleaning apparatus.

[Explanation of symbols]

 1A, 1B Treatment tank 2A, 2B Functional water supply device 2a Gas dissolving unit 2b Ultrapure water supply means 2c Gas supply means 2d Chemical liquid injection means 3 Ultrapure water supply equipment 10,20 Cleaning room 10a, 20a Bottom part 10b, 20b Overflow part 10c, 20c Flange portion 11, 21 Wafer holding portion 11a, 21a Wafer holding groove 12, 22 Liquid supply port 13, 23 Switching valve 14, 24 Switching valve 15, 25 Switching valve 16 Megasonic transmitter 17 Seal packing 31 Lower tank 31a Upper opening 31b Flange part 31c Bottom part 31d Drainage port 31e Liquid supply port 31f Slit (hole) 32 Receptor mounting part 32a Horizontal base 32b Opening 32c, 32d Vertical wall 32e Positioning protrusion 40 Upper tank 40a Lower opening 40b Overflow part 40c Flange part 40d Drainage port 40e Duplex Number of holes 41 Lower tank 41a Upper opening 41b Flange 41c Bottom 41d Drainage port 41e Liquid supply port 41f Slit (hole) 41g Screw hole 41h Bolt hole 42 Receptor mounting part 42a Horizontal base 42b Saw hole 42c, 42d Vertical wall 42e Positioning protrusion 42f (seal packing) storage groove 42g, 42h Through hole 44 Wafer receptor 44a, 44b Side wall 44c, 44d Wafer holding bar 44e, 44f Through hole 44g Positioning hole 51 Cassette hand 51a Hand plate 51b Projection 50, 52 Chucking hand 50a , 52a Hand plate 50b, 50c Wafer holding bar 52b, 52c Wafer holding bar 53 Opening / closing mechanism 53a Rotating shaft 54 (Cleaning) dedicated cassette 54c, 54d Holding groove 54g Positioning hole 54h Handle 54 Round hole 60 Transfer means 60a Wafer holding part 70 Pitch conversion means 71 Base plate 72 Housing plate 73 Slide shaft 74 Guide unit 74a Rectangular groove 74b Guide part 74c Sliding hole 74d Round hole 74e Screw hole 75 Bearing 76 Shaft support means 77 Opening / closing ball screw 78, 79 Ball nut 80 Joint unit 81 Guide pin 82 Link 83 Washer 86 Stepping motor 87, 89 Pulley CC Carrier cassette G Holding groove G1 Rectangular groove G2 Guide H Wafer passing part LU Substrate loading / unloading part M Flow Ma Partition wall Mb Bottom Mc Vertical wall P1, P2 Pitch Q, R Incline angle S Wafer thickness T Width of rectangular groove W Wafer Wa Wafer surface Wb Wafer back surface WT Cleaning section

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) // C11D 7/02 C11D 7/02 7/06 7/06 7/08 7/08 (72) Inventor Masami Hanui Kyoto 48, Jodoji-Kamibabacho, Sakyo-ku, Kyoto-shi F-term (reference) within Semitechno 3B201 AA03 AB23 AB44 BB02 BB03 BB04 BB85 BB92 BB93 BB96 BB98 CB15 CC01 4H003 BA12 DA15 EA03 EA23 EA31 ED31

Claims (33)

[Claims] 1. A cleaning method for cleaning a substrate using functional water as cleaning water, comprising: immersing the substrate in the cleaning water contained in a processing tank; And a step of draining the overflowed cleaning water immediately without circulating and using the overflowed cleaning water. 2. The method according to claim 1, wherein when the plurality of substrates are collectively cleaned by the above-described process, the number of substrates transported in a normal arrangement pitch is transferred to a cleaning arrangement pitch smaller than the normal arrangement pitch. The method for cleaning a substrate according to claim 1, wherein each step is performed. 3. The cleaning of the substrate according to claim 2, wherein the substrate is transferred from the normal arrangement pitch to a number n times the normal transport number at the cleaning arrangement pitch, and then the respective steps are performed. Method. 4. When a substrate is transferred from the normal arrangement pitch to the cleaning arrangement pitch, the front-to-front and back-to-back surfaces of adjacent substrates face each other, and the cleaning arrangement between the substrates whose front surfaces face each other. Pitch P1
And the cleaning arrangement pitch P between the substrates whose back surfaces face each other
4. The method for cleaning a substrate according to claim 2, wherein 2 is different from each other at an arrangement pitch smaller than the normal arrangement pitch. 5. The cleaning arrangement pitch P1 between the front-facing substrates is set to be larger than the cleaning arrangement pitch P2 between the back-facing substrates. Cleaning method. 6. The method for cleaning a substrate according to claim 1, wherein the functional water is hydrogen water obtained by dissolving hydrogen in pure water. 7. The method for cleaning a substrate according to claim 6, wherein the functional water is alkaline functional water obtained by adding an alkaline chemical solution to the hydrogen water. 8. The method for cleaning a substrate according to claim 1, wherein the functional water is ozone water obtained by dissolving ozone in pure water. 9. The method according to claim 8, wherein the functional water is acidic functional water obtained by adding an acidic chemical solution to the ozone water. 10. A cleaning apparatus for cleaning a substrate using functional water as cleaning water, comprising: a cleaning water supply unit for supplying the cleaning water; and a cleaning water supplied from the cleaning water supply unit. A processing tank means provided with a structure for generating an upward flow in the cleaning water; and a substrate transfer means for transferring and immersing a substrate in the processing tank means, and the cleaning supplied to the processing tank means. A substrate cleaning apparatus, wherein water is subjected to wastewater treatment without being circulated after use. 11. A batch-type cleaning apparatus for cleaning a plurality of substrates at a time, wherein a substrate having a normal number of substrates arranged at a normal arrangement pitch is provided at a substrate loading / unloading section. 11. The apparatus for cleaning a substrate according to claim 10, further comprising a transfer unit for transferring to a small cleaning arrangement pitch. 12. The transfer means has a structure in which, when transferring the substrates, a normal number of substrates arranged at a normal arrangement pitch face each other to the front surface and the front surface and the rear surface to the back surface. Claim 1 characterized by the following:
2. The apparatus for cleaning a substrate according to 1. 13. A cleaning arrangement pitch P1 between substrates whose front surfaces face each other and a cleaning arrangement pitch P2 between substrates whose back surfaces face each other are smaller than the normal arrangement pitch, and P1 is larger than P2. 13. The apparatus for cleaning a substrate according to claim 12, wherein the height of the substrate is set to be large. 14. A batch-type cleaning apparatus for cleaning a plurality of substrates at a time, wherein a substrate having a normal transfer pitch accommodated in a carrier cassette having a normal layout pitch is provided at a substrate loading / unloading section. 11. The apparatus for cleaning a substrate according to claim 10, further comprising a transfer means for transferring to a cleaning cassette accommodated at a smaller cleaning arrangement pitch. 15. The transfer means has a structure in which, when transferring the substrates, the normal number of substrates arranged at a normal arrangement pitch are faced to the front surface and the front surface and the back surface to the back surface, respectively. Claim 1 characterized by the following:
4. The apparatus for cleaning a substrate according to item 3. 16. A cleaning arrangement pitch P1 between the substrates whose front surfaces face each other and a cleaning arrangement pitch P2 between the substrates whose back surfaces face each other are smaller than the normal arrangement pitch, and P1 is larger than P2. 16. The apparatus for cleaning a substrate according to claim 15, wherein the value is also set to be large. 17. The apparatus for cleaning a substrate according to claim 10, wherein said processing tank means is provided with a megasonic irradiation means. 18. The apparatus for cleaning a substrate according to claim 10, wherein the functional water is a hydrogen water obtained by dissolving hydrogen in pure water. 19. The substrate cleaning apparatus according to claim 18, wherein the functional water is alkaline functional water obtained by adding an alkaline chemical solution to the hydrogen water. 20. The functional water according to claim 10, wherein the functional water is ozone water obtained by dissolving ozone in pure water.
7. The substrate cleaning apparatus according to any one of 6. 21. The substrate cleaning apparatus according to claim 20, wherein the functional water is acidic functional water obtained by adding an acidic chemical solution to the ozone water. 22. The processing tank means comprises a processing tank in which an upper tank, a lower tank, and a substrate holding means which are independent from each other are separably combined.
22. The apparatus for cleaning a substrate according to any one of 0 to 21. 23. The substrate holding means, wherein a substrate holding portion for holding a substrate and a mounting portion for positioning and holding the substrate holding portion at a predetermined position in the processing tank are separably assembled. 23. The apparatus for cleaning a substrate according to claim 22, wherein: 24. The stationary resin integrated molded product having a cassetteless type substrate holding structure having a holding groove for holding a substrate, wherein the substrate holding section is provided. Substrate cleaning equipment. 25. The substrate according to claim 23, wherein the substrate holding unit is a detachable resin integrated molded product in the form of a cleaning cassette having a holding groove for holding a substrate. Cleaning equipment. 26. The processing tank is assembled in a stacked manner in the order of the upper tank, the receiver, and the lower tank, and has a structure in which the substrate holder is positioned and held on the receiver. The apparatus for cleaning a substrate according to any one of claims 23 to 25, wherein: 27. A flange provided over the entire circumference of the lower opening of the upper tank, a flange provided over the entire circumference of the horizontal base of the placing section, and over the entire circumference of the upper opening of the lower tank. 27. The apparatus for cleaning a substrate according to claim 26, wherein the processing tank is assembled by integrally fixing the provided flange portions in a laminated manner. 28. A flange structure in which a flange portion of the mounting portion is provided with a seal groove all around its end face, and an elastic seal packing is fitted in the seal groove to be elastically deformable in a tightening direction. The apparatus for cleaning a substrate according to claim 27, wherein: 29. The mounting part according to claim 29, further comprising a horizontal base having a positioning engagement part for positioning and engaging with the substrate holding part, and a sloping hole structure having a rectifying action. The apparatus for cleaning a substrate according to any one of claims 23 to 28. 30. The mounting part according to claim 30, further comprising a horizontal base having a positioning engagement part for positioning and engaging with the substrate holding part, and an opening structure for megasonic irradiation. The apparatus for cleaning a substrate according to any one of claims 23 to 28. 31. The apparatus for cleaning a substrate according to claim 22, wherein the upper tank and the lower tank are formed of the same material. 32. The apparatus for cleaning a substrate according to claim 22, wherein the upper tank and the lower tank are formed of different materials. 33. The substrate cleaning apparatus according to claim 31, wherein the upper tank is formed of a resin material, and the lower tank is formed of quartz glass.