200847248 九、發明說明 【發明所屬之技術領域】 本發明係有關對被處理基板使用二種類以上的處理液 在一個處理槽內進行複數的處理之基板處理裝置及基板處 理方法，特別是有關可使被處理基板的板面內之處理的均 一性提升之基板處理裝置及基板方法。 又，本發明係有關在同一處理槽內對被處理基板連續 進行使用藥液的複數種類的處理之基板處理裝置及基板處 理方法，特別是有關可使被處理基板的板面內之處理的均 一性提升的同時，可有效率地進行複數的處理之基板處理 裝置及基板處理方法。 又，本發明係有關從使用相異種類的藥液之複數的處 理來選擇一個的處理，在處理槽內對被處理基板進行該被 選擇的處理之基板處理裝置及基板處理方法，特別是可使 被處理的板面內之處理的均一性提升之基板處理裝置及基 板處理方法。 【先前技術】 以住’將半導體晶圓或玻璃基板寺的被處理基板浸漬 於處理液的情形廣泛被進行。而且，在一個處理槽內依序 供給二種類以上的處理液，而於同一處理槽內進行複數的 處理之基板處理裝置及基板處理方法爲人所知。 在日本特開平8- 1 95 3 72中揭示有在同一槽內實施使 用藥液的處理、及其後進行之使用純水的洗滌處理的例子 -5- 200847248 。此例是在積蓄有藥液的處理槽內浸漬被處理基板，在處 理槽內形成攪拌流，一邊補充該藥液，一邊處理被處理基 板。若根據如此的方法，則可使藥液的濃度在處理槽內形 成均一。並且，洗滌處理是藉由：以能夠在處理槽內形成 攪拌流的方式將純水供給至處理槽內之工程、及以能夠在 處理槽內形成上昇流之方式將純水供給至處理槽內之工程 ，來進行。若根據如此的洗滌處理，則可以純水來置換處 理槽內的藥液的同時，可均一洗滌處理被處理基板。 在日本特開2001-274133中揭示有與上述特開平 8- 1 9 5 3 72所記載的處理方法同樣的處理方法（特開 200 1 -2 74 1 3 3的第3實施形態）。但，有關洗滌處理是揭 示可使以能夠在處理槽內形成攪拌流的方式將純水供給至 處理槽內之工程、及以能夠在處理槽內形成上昇流之方式 將純水供給至處理槽內之工程的其中之一先進行（特開 2001-274133 的段落 0083)。 另一方面，在日本特許第3 3 43 03 3號中是以能夠將處 理液積蓄於處理槽內的同時，在處理槽內形成上昇流之方 式，將該處理液補充於處理槽內的狀態下，在處理槽內配 置被處理基板而進行處理，而且，揭示有可將特許第 3 3 43 03 3號的構成適用於一邊將複數種類的處理液依序供 給至處理槽，一邊在單一的處理槽實施複數種的處理、例 如蝕刻處理及水洗處理（特許第3 3 43 03 3號的段落003 0 然而’如日本特開2001-274133或特許第3343033號 200847248 所揭示，若以能夠在處理槽內形成上昇流之方式對處理槽 內供給純水而以純水來置換處理槽內的藥液，則如特開平 8- 1 95 3 72的〔發明所欲解決的課題〕的欄所記載一般， 在被處理基板的板面中該被處理基板被配置於處理槽內時 配置於上方的部份與配置於下方的部份之間，處理的程度 會有不均之虞。 又，經本案發明者們深入硏究得知，若根據特開平 8 - 1 9 5 3 72所揭示的方法，則雖可依處理液的種類來確保 被處理基板的板面內之處理的均一性，但在將一部份的藥 液作爲處理液使用時，被處理基板的板面內之處理的均一 性會顯著降低。有關此點，例如特開200 1 -274 1 3 3或特開 2002_ 1 00605等所揭示，以確保被處理基板的板面內之處 理的均一性爲目的，各種的硏究開發進行著。然而，經本 案發明者們深入硏究得知，雖依使用於處理的藥液種類， 某程度可藉由該等的公知方法來確保被處理基板的板面內 之處理的均一性，但在使用一部份的藥液時，果然被處理 基板的板面內之處理的均一性會顯著降低。 若根據本案發明者們所取得的以上見解，則爲了在如 此的被處理基板的處理中確保被處理基板的板面內之處理 的均一性的同時，有效率地進行處理，而必須按照藥液的 種類來變更被處理基板的處理方法。並且，在對被處理基 板進行使用相異的藥液之處理時，有關被處理基板的板面 內之處理的均一性的要求有時會按各處理而有所不同。此 情況，按照均一性的要求來變更被處理基板的處理方法爲 -7- 200847248 有效。 【發明內容】 亦即，本發明是考慮該等的點而硏發著，其目的是在 於提供一種對被處理基板使用二種類以上的處理液在一個 處理槽內進行複數的處理之基板處理裝置及基板處理方法 ，特別是有關可使被處理基板的板面內之處理的均一性提 升之基板處理裝置及基板方法。 又，本發明的目的是在於提供一種可在同一處理槽內 對被處理基板連續進行使用藥液的複數種類的處理之基板 處理裝置及基板處理方法，特別是可使被處理基板的板面 內之處理的均一性提升的同時，可有效率地進行複數的處 理之基板處理裝置及基板處理方法。 又，本發明的目的是在於提供一種可從使用相異種類 的藥液之複數的處理來選擇一個的處理，在處理槽內對被 處理基板進行該被選擇的處理之基板處理裝置及基板處理 方法，特別是可使被處理的板面內之處理的均一性提升之 基板處理裝置及基板處理方法。 本案發明者們經深入硏究的結果，得知使用與基板反 應性明顯高的藥液來處理時，例如使用氨水來蝕刻矽晶圓 時，對基板的板面之處理的進行程度，不僅是在基板的板 面附近之處理液的濃度，連基板的板面附近之處理液的液 流、例如流速也會受到影響。以下所說明之本發明的第1 基板處理方法、基板處理裝置、程式及程式記錄媒體是根 -8 - 200847248 據如此的見解來解決上述的課題。 本發明之第1基板處理方法的特徵係具備： 在內部設有整流構件，且包含位於上述整流構件上側 的第1區域及位於上述整流構件下側的第2區域之處理槽 的上述第1區域內配置基板，將基板浸漬於上述處理槽所 積蓄的處理液之工程； 對上述處理槽的上述第2區域供給藥液，經由上述整 流構件來使上述藥液從上述第2區域流入至上述第1區域 ，一邊在上述第1區域內的至少上述基板的附近形成上昇 流，一邊以上述藥液來置換上述處理槽內的上述處理液之 工程；及 對上述處理槽的上述第2區域供給水’經由上述整流 構件來使上述水從上述第2區域流入至上述第1區域，一 邊在上述第1區域內的至少上述基板的附近形成上昇流， 一邊以上述水來置換上述處理槽內的上述藥液之工程。 若根據如此的基板處理方法，則以能夠在收容基板且 積蓄處理液的處理槽內形成上昇流的方式，供給藥液至處 理槽內。並且，處理槽內藉由藥液置換後，以能夠在處理 槽內形成上昇流的方式，供給水至處理槽內。任何的情況 皆是至少在上述基板的附近形成上昇流。因此，可藉由均 一形成上昇流，使基板的板面附近之液體的流動在板面內 大致成爲均一。其結果，不論液體的種類，可使基板的板 面內之處理的均一性提升。 又，若根據如此的基板處理方法，則即使使用由具有 -9- 200847248 強反應性的氨水所構成的藥液，還是可大致均一地處理矽 晶圓等的基板。在此所謂的「由氨水所構成的藥液」是意 指含以氨爲主成分的水溶液，亦包含氨及氨以外的一種類 以上的成分（例如界面活性劑）微量混入的水溶液。另外 ，上述處理液最好爲水。 又，藉由藥液來置換的處理液最好是水。 在本發明的第1基板處理方法中，在以上述藥液來置 換上述處理槽內的上述處理液之工程中供給至上述處理槽 內的上述藥液的每單位時間的供給量，可與在以上述水來 置換上述處理槽內的上述藥液之工程中供給至上述處理槽 內的上述水的每單位時間的供給量實質相同。 若根據如此的基板處理方法，則可更爲提升晶圓的板 面內之處理的均一性、特別是沿著相當於晶圓配置於處理 槽內時的上下方向的方向之晶圓的板面內的處理的均一性 〇 又，本發明之第1基板處理方法中，將上述基板配置 於上述處理槽的上述第1區域之工程，可具有··從連接至 上述處理槽的上述第1區域之上側供給管供給上述處理液 至上述第1區域，且從連接至上述拠理槽的上述第2區域 之下側供給管供給上述處理液至上述第2區域，而在上述 處理槽內積蓄上述處理液之工程。 若根據如此的基板處理方法，則可以處理液迅速地充 滿處理槽內。藉此，可有效率地進行基板的處理。並且， 在如此的第1基板處理方法中，將上述基板配置於上述處 -10- 200847248 理槽的上述第1區域之工程可更具有：在積蓄上述處理液 的上述處理槽的上述第1區域內配置上述基板之工程。 若根據如此的基板處理方法，則可使基板成爲安定地 浸漬於處理液的狀態。 又，本發明的第1基板處理方法中，上述整流構件係 由：具有多數的貫通孔，且將上述處理槽內區分成上述第 1區域及上述第2區域的整流板所構成， 供給至上述第2區域的液體，可經由上述整流板的貫 通孔，從上述第2區域流入至上述第1區域。 若根據如此的基板處理方法，則可藉由簡易構成的整 流構件，一邊在處理槽的第1區域內形成具有水平方向的 均一性的上昇流，一邊使液體從處理槽的第2區域流入第 1區域。 又，本發明的第1基板處理方法，在供給上述藥液而 以上述藥液來置換上述處理槽內的上述處理液之工程後， 更具備：對上述處理槽的上述第2區域供給藥液，而經由 上述整流構件，使上述藥液從上述第2區域流入至上述第 1區域，一邊在上述第1區域内的至少上述基板的附近形 成上昇流，一邊使上述基板在上述處理槽內浸漬於上述藥 液之工程。 若根據如此的基板處理方法，則可一面確保基板的板 面內之處理的均一性，一面調節對基板之處理的程度。 又，本發明的第1基板處理方法，在供給上述水而以 上述水來置換上述處理槽內的上述藥液之工程後’更具備 -11 - 200847248 :對上述處理槽的上述第1區域供給水，而於上述第1區 域內的至少上述基板的附近攪拌液體之工程。 若根據如此的基板處理方法，則因爲在基板的附近攪 拌液體，所以可以高除去率來除去附著於基板的板面之附 著物。 又，亦可在供給上述水而於上述處理槽內的第1區域 內攪拌液體之工程中，對上述處理槽的上述第1區域供給 水，且對上述處理槽的上述第2區域供給水。 若根據如此的基板處理方法，則可促進使從基板除去 的附著物浮上至處理槽內的上方。藉此，可防止所被除去 的附著物再度附著於基板。 又，本發明之第1基板處理方法的上述工程的其中至 少一個工程中，亦可使超音波發生於上述處理槽內的液體 〇 若根據如此的基板處理方法，則可以高除去率來除去 附著於基板的板面之附著物。 本發明之第1基板處理裝置的特徵係具備： 處理槽，其係包含··收容基板的第1區域、及配置於 上述第1區域的下方之第2區域； 整流構件，其係設於上述處理槽內的上述第1區域與 上述第2區域之間； 下側供給管，其係連接至上述處理槽的上述第2區域 ，至少可將藥液及水供給至上述處理槽的上述第2區域內 -12- 200847248 切換機構，其係連接至上述下側供給管，切換來自上 述下側供給管之液體的供給；及 控制裝置，其係連接至上述切換機構，控制從上述下 側供給管往上述處理槽的上述第2區域內之液體的供給， 又，上述控制裝置，係控制上述切換機構，而使能夠 對積蓄處理液且收容基板的上述處理槽的上述第2區域供 給藥液，而經由上述整流構件，使上述藥液從上述第2區 域流入至上述第1區域，一邊在上述第1區域內的至少上 述基板的附近形成上昇流，一邊以上述藥液來置換上述處 理槽內的上述處理液， 然後，對上述處理槽的上述第2區域供給水，經由上 述整流構件，使上述水從上述第2區域流入至上述第1區 域，一邊在上述第1區域內的至少上述基板的附近形成上 昇流，一邊以上述水來置換上述處理槽內的上述藥液。 若根據如此的基板處理裝置，則以在收容基板且積蓄 處理液的處理槽內形成上昇流之方式，供給藥液至處理槽 內。並且，處理槽內藉由藥液置換後，以能夠在處理槽內 形成上昇流之方式，供給水至處理槽內。任何的情況皆是 至少在上述基板的附近形成上昇流。因此，可藉由均一形 成上昇流，使基板的板面附近之液體的流動在板面內大致 成爲均一。其結果，不論液體的種類，可使基板的板面內 之處理的均一性提升。 又，若根據如此的基板處理裝置，則即使使用由具有 強反應性的氨水所構成的藥液，還是可大致均一地處理石夕 -13- 200847248 晶圓等的基板。在此所謂的「由氨水所構成的藥液」是意 指含以氨爲主成分的水溶液，亦包含氨及氨以外的一種類 以上的成分（例如界面活性劑）微量混入的水溶液。另外 ，藉由藥液置換的處理液最好爲水。 本發明的第1基板處理裝置中，上述控制裝置係控制 上述切換機構，而使在以上述藥液來置換上述處理槽內的 上述處理液時，供給至上述處理槽內的上述藥液的每單位 時間的供給量能夠與在以上述水來置換上述處理槽內的上 述藥液時，供給至上述處理槽內的上述水的每單位時間的 供給量實質相同。 若根據如此的基板處理裝置，則更可提升晶圓的板面 內之處理的均一性，特別是沿著相當於晶圓配置於處理槽 內時的上下方向的方向之晶圓的板面內的處理的均一性。 又，本發明的第1基板處裝置中，上述整流構件係具 有形成多數個貫通孔的整流板，供給至上述第2區域的液 體，可經由上述整流板的貫通孔，從上述第2區域流入至 上述第1區域。 若根據如此的基板處理裝置，則可藉由簡易構成的整 流構件，一邊在處理槽的第1區域內形成具有水平方向的 均一性的上昇流，一邊使液體從處理槽的第2區域流入第 1區域。 又，本發明的第1基板處理裝置，更具備：連接至上 述處理槽的上述第1區域，可對上述處理槽的上述第1區 域內供給液體之上側供給管， -14- 200847248 上述切換機構係與上述上側供給管連結，可切換來自 上述上側供給管之液體的供給， 上述控制裝置可控制從上述上側供給管往上述處理槽 的上述第1區域內之液體的供給。 若根據如此的基板處理裝置，則可對配置於第i區域 內的基板，從上側供給管直接供給液體。藉此，可適當處 理基板。 又，如此的第1基板處理裝置，更具備：以沿著鉛直 方向的配置位置彼此相異之方式，設於上述處理槽的第1 區域內之複數的吐出構件， 上述上側供給管係連結至上述吐出構件，經由上述吐 出構件來對上述處理槽的第1區域內吐出液體。 又，如此的第1基板處理裝置中，上述控制裝置可控 制上述切換機構，而使在從上述下側供給管供給藥液至上 述處理槽內之前，能夠從上述上側供給管供給上述處理液 至上述第1區域，且從上述下側供給管供給上述處理液至 上述第2區域，而於上述處理槽內積蓄上述處理液。 若根據如此的基板處理裝置，則可以處理液迅速地充 滿處理槽內。藉此，可有效率地進行基板的處理。 又，如此的第1基板處理裝置中，上述控制裝置可控 制上述切換機構，而使從上述下側供給管供給水至上述處 理槽內之後，能夠從上述上側供給管供給水至上述第1區 域，而於上述第1區域內的至少上述基板的附近攪拌液體 -15- 200847248 若根據如此的基板處理裝置，則因爲在基板的附近攪 拌液體，所以可以高除去率來除去附著於基板的板面之附 著物。 又，如此的第1基板處理裝置中，上述控制裝置可控 制上述切換機構，而使在上述處理槽內的第1區域內攪拌 液體時，能夠從上述上側供給管供給水至上述第1區域， 且從上述下側供給管供給水至上述第2區域。 若根據如此的基板處理裝置，則可促進使從基板除去 的附著物浮上至處理槽內的上方。藉此，可防止所被除去 的附著物再度附著於基板。 又’本發明的第1基板處理裝置中，上述控制裝置可 控制上述切換機構，而使從上述下側供給管供給上述藥液 ，以上述藥液來置換上述處理槽內的上述處理液之後，能 夠從上述下側供給管持續供給藥液至上述第2區域，經由 上述整流構件，使上述藥液從上述第2區域流入至上述第 1區域，一邊在上述第1區域內的至少上述基板的附近形 成上昇流，一邊使上述基板在上述處理槽內浸漬於上述藥 液。 若根據如此的基板處理裝置，則可一面確保基板的板 面內之處理的均一性，一面調節對基板之處理的程度。 又，本發明的第1基板處理裝置，可更具備：使超音 波發生於上述處理槽內的液體之超音波發生裝置。 若根據如此的基板處理裝置，則可以高除去率來除去 附著於基板的板面之附著物。 -16- 200847248 本發明的第1程式，係藉由控制基板處理裝置的控制 裝置來執行的程式，該基板處理裝置係具備：包含收容基 板的第1區域及配置於上述第1區域下方的第2區域之處 理槽、及設於上述處理槽內的上述第1區域與上述第2區 域之間的整流構件，其特徵爲： 藉由上述控制裝置來執行，使包含下列工程之基板的 處理方法實施於基板處理裝置， 在上述處理槽的上述第1區域內配置基板，將基板浸 漬於上述處理槽所積蓄的處理液之工程； 對上述處理槽的上述第2區域供給藥液，而經由上述 整流構件，使上述藥液從上述第2區域流入至上述第1區 域，一邊在上述第1區域內的至少上述基板的附近形成上 昇流，一邊以上述藥液來置換上述處理槽內的上述處理液 之工程；及 對上述處理槽的上述第2區域供給水，經由上述整流 構件來使上述水從上述第2區域流入至上述第1區域，一 邊在上述第1區域內的至少上述基板的附近形成上昇流， 一邊以上述水來置換上述處理槽內的上述藥液之工程。 本發明的第1記錄媒體，係記錄有藉由控制基板處理 裝置的控制裝置來執行的程式之記錄媒體，該基板處理裝 置係具備：包含收容基板的第1區域及配置於上述第1區 域下方的第2區域之處理槽、及設於上述處理槽內的上述 第1區域與上述第2區域之間的整流構件，其特徵爲： 藉由上述控制裝置來執行，使包含下列工程之基板的 -17- 200847248 處理方法實施於基板處理裝置， 在上述處理槽的上述第1區域內配置基板，將基板浸 漬於上述處理槽所積蓄的處理液之工程； 對上述處理槽的上述第2區域供給藥液，而經由上述 整流構件，使上述藥液從上述第2區域流入至上述第1區 域’ 一邊在上述第1區域內的至少上述基板的附近形成上 昇流’一邊以上述藥液來置換上述處理槽內的上述處理液 之工程；及 對上述處理槽的上述第2區域供給水，經由上述整流 構件來使上述水從上述第2區域流入至上述第1區域，一 邊在上述第1區域內的至少上述基板的附近形成上昇流， 一邊以上述水來置換上述處理槽內的上述藥液之工程。 又，本案發明者們經深入硏究的結果，得知對被處理 基板的板面之處理的進行程度，不僅是在被處理基板的板 面附近之處理液的濃度，連基板的板面附近之處理液的液 流、例如流速也會受到影響。以下所說明之本發明的第2 基板處理方法、基板處理裝置、程式及程式記錄媒體，以 及本發明的第3基板處理方法、基板處理裝置、程式及程 式記錄媒體是根據如此的見解，按照被使用於處理的藥液 與被處理基板的反應性、或有關一片的被處理基板內之處 理的均一性的要求等，按各處理適當變更處理槽內之液體 的流動，解決上述的課題。 本發明的第2基板處理方法，係使用在內部設有整流 構件，且包含位於上述整流構件上側收容基板的第1區域 -18- 200847248 及位於上述整流構件下側的第2區域之處理槽來處理上述 基板之方法，其特徵係具備： 對上述處理槽的上述第2區域供給第1藥液，經由上 述整流構件，使上述第1藥液從上述第2區域流入至收容 有上述基板的上述第1區域，一邊在上述第1區域內的至 少上述基板的附近形成上昇流，一邊藉由上述第1藥液來 處理上述基板之工程；及 對上述處理槽的上述第1區域供給第2藥液，或對上 述處理槽的上述第1區域及上述第2區域供給第2藥液， 一邊在上述第1區域內的至少上述基板的附近攪拌液體， 一邊藉由上述第2藥液來處理上述基板之工程。 若根據如此的基板處理方法，則可在同一處理槽內對 基板實施使用藥液的複數種類的處理時，在每個處理改變 往處理槽內之藥液的供給方法。藉此，可用適合於各處理 的方法來處理基板。其結果，可有效率地對基板進行複數 的處理的同時’可使基板的板面內之處理的均一性提升。 另外，作爲如此的基板處理裝置之使用第1藥液的處 理例，可舉使用與基板的反應性顯著高的藥液之處理，例 如使用由氨水所構成的第1藥液之矽晶圓的蝕刻處理。另 一方面，作爲如此的基板處理裝置之使用第2藥液的處理 例，可舉與基板的反應性比第1藥液更低的藥液之處理， 例如使用由氟化氫水所構成的第2藥液之5夕晶圓的蝕刻處 理。在此所謂的「由氨水所_成的藥 '液」是意指含以氨爲 主成分的水溶液’亦包含氨及氨以外的一種類以上的成分 -19- 200847248 (例如界面活性劑）微量混入的水溶液。同樣的，所謂的 「由氟化氫水所構成的藥液」是意指含以氟化氫爲主成分 的水溶液，亦包含氟化氫及氟化氫以外的一種類以上的成 分（例如界面活性劑）微量混入的水溶液。 本發明的第2基板處理方法，在藉由上述第1藥液來 處理上述基板的工程之後，可更具備：對上述處理槽的上 述第2區域供給水，而經由上述整流構件，使上述水從上 述第2區域流入至上述第1區域，一邊在上述第1區域內 的至少上述基板的附近形成上昇流，一邊以上述水來置換 上述處理槽內的上述第1藥液之工程。 若根據如此的基板處理方法，則可藉由均一形成處理 槽內的上昇流，一邊使基板的板面附近之液體的流動在板 面內大致成爲均一，一邊以水來置換處理槽內的第1藥液 。藉此，更可使基板的板面內之使用第1藥液的處理的均 一性提升。 如此的第2基板處理方法，在藉由上述水來置換上述 處理槽內的上述第1藥液的工程之後，可更具備：對上述 處理槽的上述第1區域供給水或對上述處理槽的上述第1 區域及上述第2區域供給水，而於上述第1區域內的至少 上述基板的附近攪拌液體之工程。 若根據如此的基板處理方法，則因爲在基板的附近攪 拌液體，所以可以高除去率來除去附著於基板的板面之附 著物。特別是在不只第1區域連第2區域也被供給水時， 可促進使從基板除去的附著物浮上至處理槽內的上方。藉 -20- 200847248 此，可防止所被除去的附著物再度附著於基板。 又，本發明的第2基板處理方法中，藉由上述第1藥 液來處理上述基板的工程亦可包含··對內部積蓄有處理液 且在其第1區域內收容有上述基板之上述處理槽的上述第 2區域供給上述第1藥液，而經由上述整流構件，使上述 第1藥液從上述第2區域流入至上述第1區域，一邊在上 述第1區域內的至少上述基板的附近形成上昇流，一邊以 上述第1藥液來置換上述處理槽內的上述處理液之工程。 若根據如此的基板處理方法，則可藉由均一形成處理 槽內的上昇流，一邊使基板的板面附近之液體的流動在板 面內大致成爲均一，一邊將基板的板面附近之液體由處理 液置換成第1藥液而去。藉此，更可使基板的板面內之使 用第1藥液的處理的均一性提升。 又，如上述，在藉由上述第1藥液來處理上述基板的 工程之後，更設有：對上述處理槽的上述第2區域供給水 ，而經由上述整流構件，使上述水從上述第2區域流入至 上述第1區域，一邊在上述第1區域內的至少上述基板的 附近形成上昇流，一邊以上述水來置換上述處理槽內的上 述第1藥液之工程時，最好在以上述第1藥液來置換上述 處理槽內的上述處理液之工程中供給至上述處理槽內的上 述第1藥液的每單位時間的供給量與在以上述水來置換上 述處理槽內的上述第1藥液之工程中供給至上述處理槽內 的上述水的每卓位日寸間的供給量貫質相同。 若根據如此的基板處理方法，則可更爲提升晶圓的板 -21 - 200847248 面內之處理的均一性、特別是沿著相當於晶圓配置於處理 槽內時的上下方向的方向之晶圓的板面內的處理的均一性 〇 在該等之類的第2基板處理方法中，藉由上述第1藥 液來處理上述基板的工程，在以上述第1藥液來置換上述 處理槽內的上述處理液的工程之後，可更包含：對處理槽 的上述第2區域供給上述第1藥液，而經由上述整流構件 ，使上述第1藥液從上述第2區域流入至上述第1區域， 一邊在上述第1區域內的至少上述基板的附近形成上昇流 ，一邊在上述處理槽內將上述基板浸漬於上述第1藥液之 工程。 若根據如此的基板處理方法，則可一面確保基板的板 面內之使用第1藥液的處理的均一性，一面調節對基板之 處理的程度。 在如此的第2基板處理方法中，上述處理液可爲水。 或，如此的第2基板處理方法，在藉由上述第2藥液來處 理上述基板的工程之後，可更具備：以水來置換上述處理 槽內的上述第2藥液之工程，在藉由上述第2藥液來處理 上述基板的工程之後，進行藉由上述第1藥液來處理上述 基板的工程，在藉由上述第1藥液來處理上述基板的工程 中藉由上述第1藥液來置換的上述處理液可爲在以上述水 來置換上述處理槽內的上述第2藥液的工程中供給至上述 處理槽內的上述水。 若根據如此的基板處理方法，不必另外設置將處理液 -22- 200847248 積蓄於處理槽內的工程’因此可在原封不動維持處理的均 一性於高水準的情況下，使處理所要的時間短時間化。 又，本發明的第2基板處理方法，在藉由上述第2藥 液來處理上述基板的工程之後，更具備：對上述處理槽的 上述第1區域供給水，或對上述處理槽的上述第1區域及 上述第2區域供給水，一邊在上述第1區域內的至少上述 基板的附近攪拌液體，一邊以上述水來置換上述處理槽內 的上述第2藥液之工程。 若根據如此的基板處理方法，則因爲在基板的附近攪 拌液體，所以可一邊將基板的板面附近之第2藥液的濃度 大致均一地保持於板面內，一邊在短時間以水來置換處理 槽內的第2藥液。特別是在不只第1區域連第2區域也被 供給水時，可促進使從基板除去的附著物浮上至處理槽內 的上方。藉此，可防止所被除去的附著物再度附著於基板 〇 又，本發明的第2基板處理方法中，藉由上述第2藥 液來處理上述基板的工程，亦可包含：對內部積蓄有處理 液且其第1區域內收容有上述基板之上述處理槽的上述第 1區域供給上述第2藥液，或對內部積蓄有處理液且其第 1區域內收容有上述基板之上述處理槽的上述第1區域及 上述第2區域供給上述第2藥液，一邊在上述第1區域內 的至少上述基板的附近攪拌液體，一邊藉由上述第2藥液 來上述處理槽內的上述處理液之工程。 若根據如此的基板處理方法，則可一邊在板面內大致 -23- 200847248 均一地保持基板的板面附近之第2藥液的濃度，一邊以 時間使上昇至所望的濃度。 在如此的第2基板處理方法中，藉由上述第2藥液 處理上述基板的工程，在以上述第2藥液來置換上述處 槽內的上述處理液的工程之後，可更包含：對上述處理 的上述第1區域供給上述第2藥液或對上述處理槽的上 第1區域及上述第2區域供給上述第2藥液，而一邊在 述第1區域內的至少上述基板的附近攪拌液體，一邊在 述處理槽內將上述基板浸漬於上述第2藥液之工程。 若根據如此的基板處理方法，則可一面確保基板的 面內之使用第2藥液的處理的均一性，一面調節對基板 處理的程度。 在如此的第2處理方法中，上述處理液可爲水。或 如此的第2基板處理方法，在藉由上述第1藥液來處理 述基板的工程之後，可更具備：以水來置換上述處理槽 的上述第1藥液之工程，在藉由上述第1藥液來處理上 基板的工程之後，藉由上述第2藥液來處理上述基板之 程會被進行，在藉由上述第2藥液來處理上述基板的工 中藉由上述第2藥液所被置換的上述處理液，係以上述 來置換上述處理槽內的上述第1藥液之工程中被供給至 述處理槽內的上述水。 若根據如此的基板處理方法，不必另外設置將處理 積蓄於處理槽內的工程，因此可在原封不動維持處理的 一性於高水準的情況下，使處理所要的時間短時間化。 短 來 理 槽 述 上 上 板 之 上 內 述 工 程 水 上 液 均 -24- 200847248 另外，處理液最好爲水。 又，本發明的第2基板處理方法中，首先，可進行藉 由上述第2藥液來處理上述基板的工程，其次，進行藉由 上述第1藥液來處理上述基板的工程，然後，再度進行藉 由上述第2藥液來處理上述基板的工程。 又，本發明的第2基板處理方法中，上述整流構件可 由：具有多數的貫通孔，且將上述處理槽內區分成上述第 1區域及上述第2區域的整流板所構成， 供給至上述第2區域的液體，可經由上述整流板的貫 通孔，從上述第2區域流入至上述第1區域。 若根據如此的基板處理方法，則可藉由簡易構成的整 流構件，一邊在處理槽的第1區域內形成具有水平方向的 均一性的上昇流，一邊使液體從處理槽的第2區域流入第 1區域。 又，本發明之第2基板處理方法的上述工程的其中 至少一個的工程中，可使超音波發生於上述處理槽內的液 體。 若根據如此的基板處理方法，則可以高除去率來除去 附著於基板的板面之附著物。 本發明之第2基板處理裝置的特徵係具備： 處理槽，其係包含：收容基板的第1區域、及配置於 上述第1區域的下方之第2區域； 整流構件，其係設於上述處理槽內的上述第1區域與 上述第2區域之間； -25- 200847248 下側供給管，其係連接至上述處理槽的上述第2區域 ’至少可將第1藥液及水供給至上述處理槽的上述第2區 域內； 上側供給管，其係連接至上述處理槽的上述第1區域 ’可至少將第2藥液供給至上述處理槽的上述第1區域內 切換機構，其係連接至上述下側供給管及上述上側供 給管’切換來自上述下側供給管及上述上側供給管之液體 的供給；及 控制裝置，其係連接至上述切換機構，控制從上述下 側供給管往上述處理槽的上述第2區域內之液體的供給及 從上述上側供給管往上述處理槽的上述第1區域內之液體 的供給， 又，上述控制裝置係控制上述切換機構，而使能夠對 上述處理槽的上述第2區域供給上述第1藥液，經由上述 整流構件，使上述第1藥液從上述第2區域流入至收容有 上述基板的上述第1區域，一邊在上述第1區域內的至少 上述基板的附近形成上昇流，一邊藉由上述第1藥液來處 理上述基板， 並且，在使用上述第1藥液之上述基板的處理的前或 後，對上述處理槽的上述第1區域供給上述第2藥液或對 上述處理槽的上述第1區域及上述第2區域供給上述第2 藥液，一邊在上述第1區域內的至少上述基板的附近攪拌 液體，一邊藉由上述第2藥液來處理上述基板。 -26- 200847248 若根據如此的基板處理裝置，則可在同一處理槽內對 基板實施使用藥液的複數種類的處理時，在每個處理改變 往處理槽內之藥液的供給方法。藉此，可用適合於各處理 的方法來處理基板。其結果，可有效率地對基板進行複數 的處理的同時，可使基板的板面內之處理的均一性提升。 另外，作爲如此的基板處理裝置之使用第1藥液的處 理例，可舉使用與基板的反應性顯著高的藥液之處理，例 如使用由氨水所構成的第1藥液之矽晶圓的蝕刻處理。另 一方面，作爲如此的基板處理裝置之使用第2藥液的處理 例，可舉與基板的反應性比第1藥液更低的藥液之處理， 例如使用由氟化氫水所構成的第2藥液之矽晶圓的蝕刻處 理。在此所謂的「由氨水所構成的藥液」是意指含以氨爲 主成分的水溶液，亦包含氨及氨以外的一種類以上的成分 (例如界面活性劑）微量混入的水溶液。同樣的，所謂的 「由氟化氫水所構成的藥液」是意指含以氟化氫爲主成分 的水溶液，亦包含氟化氫及氟化氫以外的一種類以上的成 分（例如界面活性劑）微量混入的水溶液。 本發明的第2基板處理裝置中，上述控制裝置可控制 上述切換機構，而使在藉由上述第1藥液來處理上述基板 之後，能夠從上述下側供給管來供給水至上述處理槽的上 述第2區域，經由上述整流構件，使上述水從上述第2區 域流入至上述第1區域，一邊在上述第1區域內的至少上 述基板的附近形成上昇流，一邊以上述水來置換上述處理 槽內的上述第1藥液。 -27- 200847248 若根據如此的基板處理裝置，則可藉由均一形成處理 槽內的上昇流，一邊使基板的板面附近之液體的流動在板 面內大致成爲均一，一邊以水來置換處理槽內的第1藥液 。藉此，更可使基板的板面內之使用第1藥液的處理的均 一性提升。 在如此的第2基板處理裝置中，上述控制裝置可控制 上述切換機構，在以上述水來置換上述處理槽內的上述第 1藥液之後，從上述上側供給管供給水至上述第1區域， 或從上述上側供給管供給水至上述第1區域且從上述下側 供給管供給水至上述第2區域，而於上述第1區域內的至 少上述基板的附近攪拌液體。 若根據如此的基板處理裝置，則因爲在基板的附近攪 拌液體，所以可以高除去率來除去附著於基板的板面之附 著物。特別是在不只第1區域連第2區域也被供給水時， 可促進使從基板除去的附著物浮上至處理槽內的上方。藉 此，可防止所被除去的附著物再度附著於基板。 又，本發明的第2基板處理裝置中，上述控制裝置可 控制上述切換機構，而使在藉由上述第1藥液來處理上述 基板時，能夠從上述下側供給管供給上述第1藥液至內部 積蓄有處理液且其第1區域內收容有上述基板之上述處理 槽的上述第2區域，而經由上述整流構件，使上述第1藥 液從上述第2區域流入至上述第1區域，一邊在上述第i 區域內的至少上述基板的附近形成上昇流，一邊以上述第 1藥液來置換上述處理槽內的上述處理液。 -28- 200847248 若根據如此的基板處理裝置，則可藉由均一形成處理 槽內的上昇流，一邊使基板的板面附近之液體的流動在板 面內大致成爲均一，一邊將基板的板面附近之液體由處理 液置換成第1藥液而去。藉此，更可使基板的板面內之使 用第1藥液的處理的均一性提升。 又’如上述般，藉由上述第1藥液來處理上述基板之 後，對上述處理槽的上述第2區域供給水，而經由上述整 流構件，使上述水從上述第2區域流入至上述第1區域， 一邊在上述第1區域內的至少上述基板的附近形成上昇流 ，一邊以上述水來置換上述處理槽內的上述第1藥液時， 上述控制裝置可更控制上述切換機構，而使在以上述第1 藥液來置換上述處理槽內的上述處理液時供給至上述處理 槽內的上述藥液的每單位時間的供給量，能夠與在以上述 水來置換上述處理槽內的上述藥液時供給至上述處理槽內 的上述水的每單位時間的供給量實質相同。 若根據如此的基板處理方法，則可更爲提升晶圓的板 面內之處理的均一性、特別是沿著相當於晶圓配置於處理 槽內時的上下方向的方向之晶圓的板面內的處理的均一性 〇 在該等之類的第2基板處理裝置中，上述控制裝置可 控制上述切換機構，而使藉由上述第1藥液來處理上述基 板時，以上述第1藥液來置換上述處理槽內的上述處理液 之後，從上述下側供給管供給上述第1藥液至上述處理槽 的上述第2區域’而經由上述整流構件，使上述第1藥液 •29- 200847248 從上述第2區域流入至上述第1區域’ 一邊在上述第1區 域內的至少上述基板的附近形成上昇流’一邊使上述基板 在上述處理槽內浸漬於上述第1藥液。 若根據如此的基板處理裝置，則可一面確保基板的板 面內之處理的均一性，一面調節對基板之處理的程度。 在如此的第2基板處理裝置中，上述處理液可爲水。 或，在如此的第2基板處理裝置中，上述控制裝置可上述 切換機構，而使在藉由上述第2藥液來處理上述基板之後 ，以水來置換上述處理槽內的上述第2藥液，藉由上述第 2藥液來處理上述基板之後，可藉由上述第1藥液來處理 上述基板，藉由上述第1藥液來處理上述基板時藉由上述 第1藥液所被置換的上述處理液可爲在置換上述處理槽內 的上述第2藥液時被供給至上述處理槽內的上述水。 若根據如此的基板處理裝置，不必另外設置將處理液 積蓄於處理槽內的工程，因此可在原封不動維持處理的均 一性於高水準的情況下，使處理所要的時間短時間化。 又，本發明的第2基板處理裝置中，上述控制裝置可 控制上述切換機構，在藉由上述第2藥液來處理上述基板 之後，從上述上側供給管供給水至上述第1區域，或從上 述上側供給管供給水至上述第1區域且從上述下側供給管 供給水至上述第2區域，而一邊在上述第1區域內的至少 上述基板的附近攪拌液體，一邊以上述水來置換上述處理 槽內的上述第2藥液。 若根據如此的基板處理裝置，則因爲在基板的附近攪 -30- 200847248 拌液體’所以可一邊將基板的板面附近之第2藥液的濃度 大致均一地保持於板面內，一邊在短時間以水來置換處理 槽內的第2藥液。特別是在不只第1區域連第2區域也被 供給水時，可促進使處理槽內的浮游物浮上至上方。藉此 ，可防止所被除去的附著物再度附著於基板。 又，本發明的第2基板處理裝置中，上述控制裝置可 控制上述切換機構，而使在藉由上述第2藥液來處理上述 基板時，能夠從上述上側供給管供給上述第2藥液至內部 積蓄有處理液且在其第1區域內收容有上述基板之上述處 理槽的上述第1區域，或從上述上側供給管供給上述第2 藥液至內部積蓄有處理液且在其第1區域內收容有上述基 板之上述處理槽的上述第1區域的同時，從上述下側供給 管供給上述第2藥液至該處理槽的上述第2區域，而一邊 在上述第1區域內的至少上述基板的附近攪拌液體，一邊 以上述第2藥液來置換上述處理槽內的上述處理液。 若根據如此的基板處理裝置，則可一邊在板面內大致 均一地保持基板的板面附近之第2藥液的濃度，一邊以短 時間使上昇至所望的濃度。 在如此的第2基板處理裝置中，上述控制裝置可控制 上述切換機構，而使在藉由上述第2藥液來處理上述基板 時，以上述第2藥液來置換上述處理槽內的上述處理液之 後，能夠從上述上側供給管供給上述第2藥液至上述第1 區域，或從上述上側供給管供給上述第2藥液至上述第1 區域的同時，從上述下側供給管供給上述第2藥液至上述 -31 - 200847248 第2區域，而一邊在上述第1區域內的至少上述基板的附 近攪拌液體，一邊使上述基板在上述處理槽內浸漬於上述 第2藥液。 若根據如此的基板處理裝置，則可一面確保基板的板 面內之使用第2藥液的處理的均一性，一面調節對基板之 處理的程度。 在如此的第2基板處理裝置中，上述處理液可爲水。 或，在如此的第2基板處理裝置中，上述控制裝置可上述 切換機構，而使在藉由上述第1藥液來處理上述基板之後 ，以水來置換上述處理槽內的上述第1藥液，藉由上述第 1藥液來處理上述基板之後，可藉由上述第2藥液來處理 上述基板，藉由上述第2藥液來處理上述基板時藉由上述 第2藥液所被置換的上述處理液可爲在置換上述處理槽內 的上述第2藥液時被供給至上述處理槽內的上述水。 若根據如此的基板處理方法，不必另外設置將處理液 積蓄於處理槽內的工程，因此可在原封不動維持處理的均 一性於高水準的情況下，使處理所要的時間短時間化。 又，本發明的第2基板處理裝置，控制裝置可控制切 換機構，而使首先藉由上述第2藥液來處理上述基板，其 次藉由上述第1藥液來處理上述基板，然後，藉由上述第 2藥液再度處理上述基板。 又，本發明的第2基板處理裝置中，上述整流構件係 具有形成多數個貫通孔的整流板，供給至上述第2區域的 液體，可經由上述整流板的貫通孔，從上述第2區域流入 -32- 200847248 至上述第1區域。 若根據如此的基板處理裝置’則可藉由 流構件，一邊在處理槽的第1區域內形成具 均一性的上昇流，一邊使液體從處理槽的第 1區域。 又，本發明的第2基板處理裝置可更具 直方向的配置位置能夠彼此相異之方式’設 的第1區域內之複數的吐出構件，上述上側 至上述吐出構件，經由上述吐出構件來對上 1區域內吐出液體。 又，本發明的第2基板處理裝置，可更 波發生於上述處理槽內的液體之超音波發生 若根據如此的基板處理裝置，則可以高 附著於基板的板面之附著物。 本發明的第2程式，係藉由控制基板處 裝置來執行的程式，該基板處理裝置係具備 板的第1區域及配置於上述第1區域下方的 理槽、及設於上述處理槽內的上述第1區域 域之間的整流構件，其特徵爲： 藉由上述控制裝置來執行，使包含下列 處理方法實施於基板處理裝置， 對上述處理槽的上述第2區域供給第1 述整流構件，使上述第1藥液從上述第2區 有上述基板的上述第1區域，一邊在上述第 簡易構成的整 有水平方向的 2區域流入第 備：以沿著鉛 於上述處理槽 供給管可連結 述處理槽的第 具備：使超音 裝置。 除去率來除去 理裝置的控制 :包含收容基 第2區域之處 與上述第2區 工程之基板的 藥液，經由上 域流入至收容 1區域內的至 -33- 200847248 少上述基板的附近形成上昇流，一邊藉由上 處理上述基板之工程；及 對上述處理槽的上述第1區域供給第2 述處理槽的上述第1區域及上述第2區域供 一邊在上述第1區域內的至少上述基板的附 一邊藉由上述第2藥液來處理上述基板之工 本發明的第2記錄媒體，係記錄有藉由 裝置的控制裝置來執行的程式之記錄媒體， 置係具備：包含收容基板的第1區域及配置 域下方的第2區域之處理槽、及設於上述處 第1區域與上述第2區域之間的整流構件， 藉由上述控制裝置來執行，使包含下列 處理方法實施於基板處理裝置， 對上述處理槽的上述第2區域供給第1 述整流構件，使上述第1藥液從上述第2區 有上述基板的上述第1區域，一邊在上述第 少上述基板的附近形成上昇流，一邊藉由上 處理上述基板之工程；及 對上述處理槽的上述第1區域供給第2 述處理槽的上述第1區域及上述第2區域供 一邊在上述第1區域內的至少上述基板的附 一邊藉由上述第2藥液來處理上述基板之工 本發明之第3基板處理方法，係於內部 ，且包含位於上述整流構件上側收容基板的 述第1藥液來 藥液，或對上 給第2藥液， 近攪拌液體， 控制基板處理 該基板處理裝 於上述第1區 理槽內的上述 其特徵爲= 工程之基板的 藥液，經由上 域流入至收容 1區域內的至 述第1藥液來 藥液，或對上 給第2藥液， 近攪拌液體， 程。 設有整流構件 第1區域及位 -34- 200847248 於上述整流構件下側的第2區域之處理槽內，使用 液及第2藥液的其中之一來處理基板之方法，其特 備· 設定藉由上述第1藥液及上述第2藥液的其中 處理基板之工程；及 藉由上述所被設定的藥液來處理上述基板之工 在藉由上述所被設定的藥液來處理上述基板的 j 當所被設定的藥液爲上述第1藥液時，對上 槽的上述第2區域供給第1藥液，而經由上述整流 使上述第1藥液從上述第2區域流入至收容有上述 上述第1區域，一邊在上述第1區域內的至少上述 附近形成上昇流，一邊藉由上述第1藥液來處理上 ， 另一方面，當所被設定的藥液爲上述第2藥液 上述處理槽的上述第1區域供給第2藥液，或對上 槽的上述第1區域及上述第2區域供給第2藥液， 上述第1區域內的至少上述基板的附近攪拌液體， 由上述第2藥液來處理上述基板。 若根據如此的基板處理方法，則可在同一處理 基板實施使用藥液的複數種類的處理時，在每個處 往處理槽內之藥液的供給方法。藉此，可用適合於 的方法來處理基板。其結果，可使基板的板面內之 均一性提升。 第1藥 徵係具 哪個來 程， 工程中 述處理 構件， 基板的 基板的 述基板 時，對 述處理 一邊在 一邊藉 槽內對 理改變 各處理 處理的 -35· 200847248 另外，作爲如此的基板 理例，可舉使用與基板的反 如使用由氨水所構成的藥液 面，作爲如此的基板處理裝 可舉與基板的反應性比第1 使用由氟化氫水所構成的藥 所謂的「由氨水所構成的藥 水溶液，亦包含氨及氨以外 面活性劑）微量混入的水溶 氫水所構成的藥液」是意指 ，亦包含氟化氫及氟化氫以 界面活性劑）微量混入的水 本發明的第3基板處理 藥液來處理上述基板的工程 換上述處理槽內的上述藥液 當所被設定的藥液爲上 槽的上述第2區域供給水， 水從上述第2區域流入至收 ，一邊在上述第1區域內的 流，一邊以上述水來置換上 另一方面，當所被設定 處理槽的上述第1區域供給 述第1區域及上述第2區域 區域內的至少上述基板的附 處理裝置之使用第1藥液的處 應性顯著高的藥液之處理，例 之矽晶圓的触刻處理。另一方 置之使用第2藥液的處理例， 藥液更低的藥液之處理，例如 液之矽晶圓的蝕刻處理。在此 液」是意指含以氨爲主成分的 的一種類以上的成分（例如界 液。同樣的，所謂的「由氟化 含以氟化氫爲主成分的水溶液 外的一種類以上的成分（例如 溶液。 方法，在藉由上述所被設定的 之後，可更具備：藉由水來置 之工程， 述第 1藥液時，對上述處理 而經由上述整流構件，使上述 容有上述基板的上述第1區域 至少上述基板的附近形成上昇 述第1藥液， 的藥液爲第2藥液時，對上述 上述水，或對上述處理槽的上 ;供給上述水，一邊在上述第1 近攪拌液體，一邊以上述水來 -36- 200847248 置換上述第2藥液。 若根據如此的基板處理方法，則在處理槽內積蓄有第 1藥液時，藉由均一形成處理槽內的上昇流，可一邊使基 板的板面附近之液體的流動在板面內大致成爲均一，一邊 以水來置換處理槽內的第1藥液。藉此，可使基板的板面 內之使用第1藥液的處理的均一性更爲提升。並且，在處 理槽內積蓄有第2藥液時，由於液體會在基板的附近被攪 拌，因此可一邊在板面內大致均一地保持基板的板面附近 之第2藥液的濃度，一邊短時間以水來置換處理槽內的第 2藥液。特別是在不只第1區域連第2區域也被供給水時 ，可促進使從基板除去的附著物浮上至處理槽內的上方。 藉此，可防止所被除去的附著物再度附著於基板。 又，如此的本發明之第3基板處理方法中， 當上述所被設定的藥液爲上述第1藥液時，藉由上述 所被設定的藥液來處理上述基板之工程，係包含：對內部 積蓄有處理液且在其第1區域內收容有上述基板之上述處 理槽的上述第2區域供給上述第1藥液，而經由上述整流 構件，使上述第1藥液從上述第2區域流入至上述第1區 域，一邊在上述第1區域內的至少上述基板的附近形成上 昇流，一邊以上述第1藥液來置換上述處理槽內的上述處 理液之工程， 在以上述第1藥液來置換上述處理槽內的上述處理液 之工程中供給至上述處理槽內的上述第1藥液的每單位時 間的供給量，係與在以上述水來置換上述處理槽內的上述 -37- 200847248 第1藥液之工程中供給至上述處理槽內的上述水的每單位 時間的供給量實質相同。 若根據如此的基板處理方法，則可更爲提升基板的板 面內之處理的均一性、特別是沿著相當於基板配置於處理 槽內時的上下方向的方向之基板的板面內的處理的均一性 另外，上述處理液最好爲水。 又，本發明的第3基板處理方法中，上述整流構件具 有··具有多數的貫通孔，且將上述處理槽內區分成上述第 1區域及上述第2區域的整流板， 供給至上述第2區域的液體，可經由上述整流板的貫 通孔，從上述第2區域流入至上述第1區域。 若根據如此的基板處理方法，則可藉由簡易構成的整 流構件，一邊在處理槽的第1區域內形成具有水平方向的 均一性的上昇流，一邊使液體從處理槽的第2區域流入第 1區域。 又，本發明的第3基板處理方法，更具備：輸入有關 藉由上述第1藥液及上述第2藥液的哪個來處理上述基板 的資訊之工程， 根據上述所被輸入的資訊，設定藉由上述第1藥液及 上述第2藥液的哪個來處理上述基板。 若根據如此的基板處理方法，則例如操作者等可由外 部來輸入有關藉由上述第1藥液或上述第2藥液的哪個來 進行處理的設定。 -38- 200847248 又，本發明的第3基板處理方法中，上述工程的其中 至少一個的工程中，可使超音波發生於上述處理槽內的液 體。 若根據如此的基板處理方法，則可以高除去率來除去 附著於基板的板面之附著物。 本發明的第3基板處理裝置，係使用第1藥液及第2 藥液的其中之一來處理基板之基板處理裝置，其特徵係具 備： 處理槽，其係包含：收容基板的第1區域、及配置於 上述第1區域的下方之第2區域； 整流構件，其係設於上述處理槽內的上述第1區域與 上述第2區域之間； 下側供給管，其係連接至上述處理槽的上述第2區域 ’至少可將第1藥液供給至上述處理槽的上述第2區域內 f 上側供給管，其係連接至上述處理槽的上述第1區域 ’至少可將第2藥液供給至上述處理槽的上述第1區域內 9 切換機構，其係連接至上述下側供給管及上述上側供 給管’切換來自上述下側供給管及上述上側供給管之液體 的供給；及 控制裝置，其係連接至上述切換機構，控制從上述下 側供給管往上述處理槽的上述第2區域內之液體的供給及 從上述上側供給管往上述處理槽的上述第i區域內之液體 -39- 200847248 的供給， 又，上述控制裝置，係具有進行藉由第1藥液及第2 藥液的哪個來對基板進行處理的設定之設定部，可根據上 述設定部的設定內容來控制上述切換機構， 上述控制裝置係控制上述切換機構，而使當所被設定 的藥液爲上述第1藥液時，對上述處理槽的上述第2區域 供給第1藥液，而經由上述整流構件，使上述第1藥液從 上述第2區域流入至收容有上述基板的上述第1區域，一 邊在上述第1區域內的至少上述基板的附近形成上昇流， 一邊藉由上述第1藥液來處理上述基板， 另一方面，當所被設定的藥液爲第2藥液時，對上述 處理槽的上述第1區域供給上述第2藥液，或對上述處理 槽的上述第1區域及上述第2區域供給上述第2藥液，一 邊在上述第1區域內的至少上述基板的附近攪拌液體，一 邊藉由上述第2藥液來處理基板。 若根據如此的基板處理裝置，則可在同一處理槽內對 基板實施使用藥液的複數種類的處理時，在每個處理改變 往處理槽內之藥液的供給方法。藉此，可用適合於各處理 的方法來處理基板。其結果，可使基板的板面內之處理的 均一性提升。 另外，作爲如此的基板處理裝置之使用第1藥液的處 理例，可舉使用與基板的反應性顯著高的藥液之處理，例 如使用由氨水所構成的第1藥液之矽晶圓的蝕刻處理。另 一方面，作爲如此的基板處理裝置之使用第2藥液的處理 -40 - 200847248 例，可舉與基板的反應性比第1藥液更低的藥液之處理， 例如使用由氟化氫水所構成的第2藥液之矽晶圓的飩刻處 理。在此所謂的「由氨水所構成的藥液」是意指含以氨爲 主成分的水溶液’亦包含氨及氨以外的一種類以上的成分 (例如界面活性劑）微量混入的水溶液。同樣的，所謂的 「由氟化氫水所構成的藥液」是意指含以氟化氫爲主成分 的水溶液，亦包含氟化氫及氟化氫以外的一種類以上的成 分（例如界面活性劑）微量混入的水溶液。 本發明的第3基板處理裝置中，控制裝置，可藉由上 述所被設定的藥液來處理上述基板之後，控制上述切換機 構，而使當所被設定的藥液爲上述第 1藥液時，從上述 下側供給管供給水至上述第2區域，而經由上述整流構件 ，使上述水從上述第2區域流入至上述第1區域，一邊在 上述第1區域內的至少上述基板的附近形成上昇流，一邊 以上述水來置換上述處理槽內的上述第1藥液， 另一方面，當所被設定的藥液爲第2藥液時，從上述 上側供給管供給水至上述第1區域，或從上述上側供給管 供給水至上述第1區域，且從上述下側供給管供給水至上 述第2區域，而一邊在上述第1區域內的至少上述基板的 附近攪拌液體，一邊以上述水來置換上述處理槽內的上述 第2藥液。 若根據如此的基板處理裝置，則在處理槽內積蓄有第 1藥液時，可藉由均一形成處理槽內的上昇流，一邊使基 板的板面附近之液體的流動在板面內大致成爲均一，一邊 -41 - 200847248 以水來置換處理槽內的第1藥液。藉此，更可使基板的板 面內之使用第1藥液的處理的均一性提升。並且，在處理 槽內積蓄有第2藥液時，因爲在基板的附近攪拌液體，所 以可一邊將基板的板面附近之第2藥液的濃度大致均一地 保持於板面內，一邊在短時間以水來置換處理槽內的第2 藥液。特別是在不只第1區域連第2區域也被供給水時， 可促進使從基板除去的附著物浮上至處理槽內的上方。藉 此，可防止浮游物附著於基板。 又，如此的本發明之第3基板處理裝置中，上述控制 裝置可控制上述切換機構，而使當上述所被設定的藥液爲 上述第1藥液時，在藉由上述第1藥液來處理上述基板時 ，對內部積蓄有處理液且在其第1區域內收容有上述基板 之上述處理槽的上述第2區域供給上述第1藥液，而經由 上述整流構件，使上述第1藥液從上述第2區域流入至上 述第1區域，一邊在上述第1區域內的至少上述基板的附 近形成上昇流，一邊以上述第1藥液來置換上述處理槽內 的上述處理液， 在以上述第1藥液來置換上述處理槽內的上述處理液 時，供給至上述處理槽內的上述第1藥液的每單位時間的 供給量，係與在以上述水來置換上述處理槽內的上述第1 藥液時，供給至上述處理槽內的上述水的每單位時間的供 給量實質相同。 若根據如此的基板處理裝置，則可更爲提升晶圓的板 面內之處理的均一性、特別是沿著相當於基板配置於處理 -42- 200847248 槽內時的上下方向的方向之基板的板面內的處理的均一性 〇 另外，上述處理液最好爲水。 又，本發明的第3基板處理裝置中，上述整流構件係 具有形成多數個貫通孔的整流板，供給至上述第2區域的 液體可經由上述整流板的貫通孔，從上述第2區域流入上 述第1區域。 若根據如此的基板處理裝置，則可藉由簡易構成的整 流構件，一邊在處理槽的第1區域內形成具有水平方向的 均一性的上昇流，一邊使液體流入處理槽的第1區域。 又，本發明的第3基板處理裝置，更具備：以沿著鉛 直方向的配置位置彼此相異之方式，設於上述處理槽的第 1區域內之複數的吐出構件， 上述上側供給管係連結至上述吐出構件，經由上述吐 出構件來對上述處理槽的第1區域內吐出液體。 又，本發明的第3基板處理裝置，更具備：輸入有關 藉由上述第1藥液及上述第2藥液的哪個來處理上述基板 的資訊之輸入部， 上述設定部係根據在上述輸入部所被輸入的資訊，設 定藉由上述第1藥液及上述第2藥液的哪個來處理上述基 板。 若根據如此的基板處理方法，則例如操作者等可由外 部來輸入有關藉由上述第1藥液或上述第2藥液的哪個來 進行處理的設定。 -43- 200847248 又，本發明的第3基板處理方法中’上述工程的其中 至少一個的工程中，可使超苜波發生於上述處理槽內的液 體。 若根據如此的基板處理裝置’則例如操作者等可由外 部輸入設定部的設定。 又，本發明的第3基板處理裝置，可更具備：使超音 波發生於上述處理槽內的液體之超音波發生裝置。 若根據如此的基板處理裝置’則可以高除去率來除去 附著於基板的板面之附著物。 本發明的第3程式，係藉由控制基板處理裝置的控制 裝置來執行的程式，該基板處理裝置係具備：包含收容基 板的第1區域及配置於上述第1區域下方的第2區域之處 理槽、及設於上述處理槽內的上述第1區域與上述第2區 域之間的整流構件，其特徵爲： 藉由上述控制裝置來執行，使下述基板的處理方法實 施於基板處理裝置， 該基板的處理方法係具備： 設定藉由上述第1藥液及上述第2藥液的其中哪個來 處理基板之工程；及 藉由上述所被設定的藥液來處理上述基板之工程， 在藉由上述所被設定的藥液來處理上述基板的工程中 當所被設定的藥液爲上述第1藥液時，對上述處理 槽的上述第2區域供給第1藥液，而經由上述整流構件， -44- 200847248 使上述第1藥液從上述第2區域流入至收容有上述基板的 上述第1區域，一邊在上述第1區域內的至少上述基板的 附近形成上昇流，一邊藉由上述第1藥液來處理上述基板 ， 另一方面，當所被設定的藥液爲上述第2藥液時，對 上述處理槽的上述第1區域供給第2藥液，或對上述處理 槽的上述第1區域及上述第2區域供給第2藥液，一邊在 上述第1區域內的至少上述基板的附近攪拌液體，一邊藉 由上述第2藥液來處理上述基板。 本發明的第3記錄媒體，係記錄有藉由控制基板處理 裝置的控制裝置來執行的程式之記錄媒體，該基板處理裝 置係具備：包含收容基板的第1區域及配置於上述第i區 域下方的第2區域之處理槽、及設於上述處理槽內的上述 第1區域與上述第2區域之間的整流構件，其特徵爲： 藉由上述控制裝置來執行，使下述基板的處理方法實 施於基板處理裝置， 該基板的處理方法係具備： 設定藉由上述第1藥液及上述第2藥液的其中哪個來 處理基板之工程；及 藉由上述所被設定的藥液來處理上述基板之工程， 在藉由上述所被設定的藥液來處理上述基板的工程中 當所被設定的藥液爲上述第 1藥液時，對上述處理 槽的上述第2區域供給第1藥液，而經由上述整流構件， -45- 200847248 使上述第1藥液從上述第2區域流入至收容有上述基板的 上述第1區域，一邊在上述第1區域內的至少上述基板的 附近形成上昇流，一邊藉由上述第1藥液來處理上述基板 另一方面，當所被設定的藥液爲上述第2藥液時，對 上述處理槽的上述第1區域供給第2藥液，或對上述處理 槽的上述第1區域及上述第2區域供給第2藥液，一邊在 上述第1區域內的至少上述基板的附近攪拌液體，一邊藉 由上述第2藥液來處理上述基板。 【實施方式】 以下，參照圖面來本發明的幾個實施形態。另外，在 以下說明的實施形態中是說明將本發明適用於矽晶圓（半 導體晶圓）的蝕刻處理及其後的洗滌處理之例。但，本發 明並非限於蝕刻處理及其後的洗滌處理，亦可廣泛適用於 基板的處理。 [第1實施形態] 首先，參照圖1〜圖8來說明本發明的基板處理裝置 及基板處理方法、基板處理程式、及程式記錄媒體的第1 實施形態。圖1〜圖8是用以說明基板處理裝置、基板處 理方法、基板處理程式、及程式記錄媒體的第！實施形態 的圖。其中圖1是基板處理裝置的槪略構成圖，圖2是沿 著圖1的II-II線的剖面之剖面圖，圖3〜圖8是用以說 -46- 200847248 明使用圖1所示的基板處理裝置來進行的基板處理方法 圖。 如圖1所示，本實施形態的基板處理裝置1 〇是具 :收容晶圓w的處理槽1 2、及對處理槽1 2內供給處理 的液供給設備40、及保持被處理晶圓（被處理基板） 的保持構件（亦稱爲晶圓舟）2 0、及控制各構成要素的 作之控制裝置1 8。如圖1所示，在處理槽1 2內設有整 構件2 8，藉由該整流構件2 8，處理槽1 2的內部會被區 成：位於整流構件28的上側之第1區域12a、及位於 流構件2 8的下側之第2區域1 2b。 如此的基板處理裝置1 〇是由液供給設備4 0來依序 給複數種類的處理液至處理槽1 2內，用以對收容於處 槽1 2內的晶圓W實施各種的處理之裝置。特別是本實 形態中，如圖1所示，基板處理裝置1 〇更具備可使超 波發生於處理槽1 2內所積蓄的處理液之超音波發生裝 3 0。因此，若利用本實施形態的基板處理裝置1 〇，别 超音波洗浄處理槽1 2內所被收容的晶圓W。 以下，更詳述有關基板處理裝置的各構成要素。 首先，詳述有關液供給設備40。如圖i所示，液 供給設備40是具有：連接至處理槽12的第2區域12b 下側供給管4 1、及連接至處理槽1 2的第1區域丨2a之 1〜第3上側供給管42，43，44、及與下側供給管41 上側供給管42，43，44連接的純水供給管48。 純水供給管4 8是被連接至純水源6 4。並且，在純 的 備 液 W 動 流 分 整 供 理 施 音 置 可 體 之 第 及 水 -47- 200847248 供給管48介設有吐出機構65。藉由使該吐出機構65作 動，可從純水供給管4 8供給處理液至下側供給管4 1及上 側供給管42，43，44。又，如圖1所示，下側供給管4 1 及上側供給管42，43，44與純水供給管48是經由切換機 構5 0來連接。藉由操作此切換機構5 0，可將來自純水供 給管48的處理液只送入下側供給管4 1及上側供給管42 ，43，44的其中所望的供給管。另外，在此所謂的「處 理液」是使用於處理的液體，非限於純水（DIW )，亦含 藥液。 其中，首先詳述有關純水源64及吐出機構65。純水 源64是例如由積蓄處理液的槽等、積蓄純水（DIW )之 公知的積蓄設備等所構成。另一方面，吐出機構6 5是例 如由泵等、公知的設備或機器等所構成。就更具體的吐出 機構6 5而言，例如可使用藉由調節氣體壓力來調節吐出 量之氣體驅動式的波紋管泵。 如上述，液供給設備4 0是被連接至控制裝置1 8。然 後，吐出機構6 5可藉由控制裝置1 8來控制。具體而言， 吐出機構6 5的驅動及停止、吐出機構6 5的驅動時之處理 液的供給流量等，可藉由控制裝置1 8來控制。另外，當 吐出機構65爲氣體驅動式的波紋管栗（bellows pump) 時是控制氣體壓力，當吐出機構6 5爲氣體驅動式的波紋 管泵以外時是例如控制輸入的電力量，藉此可調節吐出機 構6 5的驅動時之泵的吐出量。 其次，詳述有關切換機構5 0。如圖1所示，在本實 -48- 200847248 施形態中，切換機構50是具有第i〜第6開閉閥5丨，52 ，53 ， 54 ， 55 ， 56 ° 其中’第1開閉閥5 1是與下側供給管4〗連結。又， 第2開閉閥5 2是與第1上側供給管4 2連結。又，第3開 閉閥53是與第2上側供給管43連結。又，第4開閉閥 5 4疋與第3上側供給管4 4連結。而且，第1〜第4開閉 閥5 1〜5 4可開閉純水供給管4 8與連結至各閥5 i〜5 4的 供給管4 1〜4 4的連接狀態（連通狀態）。亦即，藉由使 各開閉閥5 1〜5 4開閉，可經由各供給管4 i〜44來控制往 處理槽1 2內之處理液的供給。 在本實施形態中，液供給設備4 0是具有積蓄相異的 藥液要素之複數的藥液要素源6 1，6 2在該液供給設備4 0 中是混合自藥液要素源6 1，62供給的藥液要素、及自純 水源6 4供給的純水，而可生成所望濃度的藥液（處理液 )。在圖示的例子中是設有：積蓄高濃度的氨水（N Η 4 Ο Η )作爲藥液要素之第1藥液要素源61、及積蓄以高濃度 含氟化氫（HF )的氟化氫水作爲藥液要素之第2藥液要 素源62。 如圖1所示，上述切換機構5 0的第5開閉閥5 5會與 第1藥液要素源6 1連結，第6開閉閥5 6會與第2藥液要 素源62連結。因此，藉由開啓第5開閉閥5 5，可使自第 1藥液要素源6 1送來的高濃度的氨水混入自純水供給管 48送來的純水，生成所望濃度的氨水（第1藥液）作爲 處理液。又，藉由開啓第6開閉閥56，可使自弟2藥液 -49- 200847248 要素源62送來的高濃度的氟化氫水混入自純水供給， 送來的純水，生成所望濃度的氟化氫水（第2藥液） 處理液。 切換機構5 0是被連接至控制裝置1 8。第1〜第 閉閥5 1〜56的開閉動作及開度是藉由控制裝置1 8來 。藉此，可經由各供給管4 1〜44來將純水或所望濃 藥液以所望的流量供給至處理槽1 2內。 另外，如此的切換機構5 0的構成只不過是個例 可使用經由所望的供給管4 1〜44來將所望濃度的處 以所望的流量供給至處理槽1 2內之公知的設備或機 來作爲切換機構5 0。 其次，詳述有關下側供給管41及第1〜第3上 給管42，43，44。如圖1所示，在本實施形態中， 給設備40更具有安裝於處理槽1 2對處理槽1 2內吐 理液之第1〜第4吐出構件71，72，73，74。而且， 給管4 1〜44的端部是被連結至對處理槽1 2內吐出處 之第1〜第4吐出構件71〜74。 如圖1所示，各吐出構件71，72，73，74是在 的四個鉛直方向位置安裝於處理槽1 2。其中第1吐 件71是被配置於處理槽12的第2區域12b內，與下 給管4 1連結。第2吐出構件72是被配置於處理槽 第1區域12a內的最下方，與第1上側供給管42連 又，第3吐出構件73是在處理槽12的第1區域12a 置於比第2吐出構件72更靠鉛直方向的上方法置， f 48 作爲 6開 控制 度的 子。 理液 器等 側供 液供 出處 各供 理液 相異 出構 側供 2的 結。 內配 與第 -50- 200847248 2上側供給管43連結。又，第4吐出構件74是在處理槽 1 2的第1區域12 a內配置於比第2吐出構件7 2及第3吐 出構件7 1 3更靠鉛直方向的上方法置，與第3上側供給管 44連結。 另外，如圖1所示，自第2吐出構件7 2吐出的處理 液，主要是可供給至處理槽1 2的第1區域丨2 a內所配置 的晶圓W的下方區域的周圍。又，如圖1所示，自第3 吐出構件73吐出的處理液，主要是可供給至處理槽1 2的 第1區域1 2 a內所配置的晶圓W的中央區域的周圍。 又，如圖1所示，自第4吐出構件7 4吐出的處理液 ，主要是被供給至處理槽1 2的第1區域1 2a內所配置的 晶圓W的上方區域的周圍。 在圖2中是根據處理槽1 2的剖面來圖示第4吐出構 件7 4。另外，在本實施形態中，第1〜第4吐出構件7 1 ，72，73，74是僅鉛直方向的配置位置相異，圖2所示 的第4吐出構件74是與第1〜第3吐出構件71，72，73 同一構成。如圖1及圖2所示，在本例中，各吐出構件 71，72，73，74是藉由設置於處理槽12的對向的側壁之 一對的噴嘴所構成。噴嘴是形成沿著處理槽1 2的壁面來 延伸於水平方向之細長狀的筒狀構件。成爲各吐出構件 71，72，73，74的二個筒狀構件是在鉛直方向彼此配置 於同一位置（參照圖1 )。 成爲吐出構件71，72，73，74的筒狀構件之一方的 端部是被閉鎖，另一方的端部是與所對應的供給管4 1， -51 - 200847248 4 2，4 3，4 4連結。如圖2所示，在各筒狀構件設有沿著 其長度方向取一定的間隔而配置的多數個吐出口 7 1 a， 72a，73a，74a。吐出口 71a，72a，73a，74a 的配置位置 是如後述，根據藉由保持構件2 0所保持的被處理晶圓w 的配置位置來決定。另外，來自各吐出構件71，72，73 ，74的吐出方向最好是可適當變更。 但，如此的吐出構件71，72，73，74的構成只不過 是個例子，可使用公知的構件等。又，亦可省略吐出構件 ，各供給管4 1〜44與處理槽直接連結。 如圖1所示，亦可在純水供給管4 8介設調整流動於 純水供給管4 8內的處理液的各種條件之調整裝置6 7。可 選擇調整處理液的溶存氣體濃度之氣體濃度調整裝置、或 調整處理液中所含的氣泡量之氣泡量調整裝置、或調整處 理液的溫度之溫度調整裝置等，作爲如此的調整裝置6 7 〇 其次，詳述有關從以上那樣的液供給設備40接受處 理液的處理槽1 2。 處理槽12是如圖1及圖2所示具有大槪正方體的輪 廓。在處理槽12形成有如後述般供以晶圓W出入的上方 開口 1 2c。並且，在處理槽1 2的底部設有可開閉之用以 排出積蓄的處理液的排出管1 3。 又，如圖1所示，以能夠包圍處理槽12的上方開口 1 2c之方式設有外槽1 5。此外槽1 5是可回收自處理槽1 2 的上方開口 12c溢出的處理液。並且，與處理槽12同樣 -52- 200847248 ’在外槽1 5亦設有可開閉之用以排出回收後的處理液之 排出管1 6。 如此的處理槽1 2及外槽丨5是例如使用富有耐藥品性 的石英等所形成。並且，處理槽1 2的底部厚度是以能夠 使來自往後說明的超苜波發生裝置3 〇的超音波透過之方 式’考量形成處理槽12的材料種類及自超音波發生裝置 3 0照射的超音波的頻率等而決定。 另外’自處理槽1 2及外槽1 5的排出管1 3，1 6排出 的處理液，可原封不動地廢棄，或經由過濾器等再度供給 至處理槽1 2內。再利用被回收於外槽1 5的處理液時，例 如圖1的點線所示’只要設置連接至外槽丨5與純水源64 的循環用配管1 6 a即可。 其次，詳述有關配置於處理槽1 2內的整流構件2 8。 整流構件28是在於調整從處理槽1 2的第2區域1 2b流入 至第1區域1 2a的處理液的流向，用以在處理槽12內的 第1區域1 2a內形成上昇流之構件。另外，在此所謂的「 上昇流」是意指從下側往上側的流向，非限於與鉛直方向 平行的流向。 如圖1及圖2所示，在本實施形態中，整流構件2 8 是由具有多數個貫通孔29的整流板所構成。整流板28是 以其板面能夠形成與水平面平行之方式被支持著。如圖2 所示，在包含收容於處理槽1 2的第1區域1 2a內的晶圓 W的正下方的區域之整流板28的大致全面形成有圓形狀 的貫通孔29。 -53- 200847248 並且，在本例中，貫通孔29是在整流板28上規則性 地配置。因此’若利用如此的整流板2 8，則可使以大槪 均~*的流速來沿者給直方向通過處理槽12的第1區域 1 2a內的假想水平面的各位置之上昇流形成於處理槽1 2 的第1區域1 2 a。亦即，可使水平方向位置之速度不均被 低減之沿著鉛直方向的上昇流形成於處理槽1 2的第1區 域1 2 a的大槪全域。 整流板2 8是由與處理槽1 2同樣的材料形成。並且， 整流板2 8的厚度是與上述處理槽1 2的底部厚度同樣，以 能夠使來自超音波發生裝置30的超音波透過之方式，考 量形成整流板2 8的材料種類及自超音波發生裝置3 〇照射 的超音波的頻率等而決定。 另外，如此構成的整流構件2 8只不過是個例子，可 使用公知的各種整流構件。 其次’說明有關保持晶圓W的保持構件2 0。如圖1 及圖2所示，保持構件20是具有：沿著大槪水平方向的 4根棒狀構件2 2、及由一側來單方支持4根棒狀構件2 2 的基部2 4。棒狀構件2 2可由下方來支持一次被處理的複 數個晶圓W、例如1 5 0片的晶圓w。因此，在各棒狀構件 22形成有沿著其長度方向取一定間隔來配列的溝（未圖 示）。晶圓W是與該溝卡合，各晶圓w的板面會與棒狀 構件的延伸方向大槪正交，亦即各晶圓W的板面會沿著 鉛直方向，藉由保持構件20來保持（參照圖1 )。 由圖2可理解，上述吐出構件71〜74的吐出口 71a -54- 200847248 〜74a的配置間距是與保持於保持構件20的晶圓W的配 置間距大致相同。特別是直接供給處理液至處理槽1 2的 第1區域12a之第2〜第4吐出構件72，73，74的各吐 出口 72a，73a，74a是以能夠在被保持於保持構件20之 相鄰的晶圓W之間（圖2的箭號方向）吐出處理液之方 式配列。 另一方面，保持構件20的基部24是被連結至未圖示 的昇降機構。利用此昇降機構來使保持晶圓W的保持構 件20降下，藉此可在處理槽1 2的第1區域1 2a內收容晶200847248 IX. [Technical Field] The present invention relates to a substrate processing apparatus and a substrate processing method for performing a plurality of processing treatments on a substrate to be processed using two or more types of processing liquids in one processing tank. In particular, it relates to a substrate processing apparatus and a substrate method which can improve the uniformity of the processing in the plane of the substrate to be processed. also, The present invention relates to a substrate processing apparatus and a substrate processing method for continuously performing a plurality of types of processing using a chemical liquid on a substrate to be processed in the same processing tank. In particular, while improving the uniformity of the processing in the plane of the substrate to be processed, A substrate processing apparatus and a substrate processing method capable of efficiently performing a plurality of processes. also, The present invention relates to a process for selecting one from a plurality of processes using different kinds of chemical liquids, a substrate processing apparatus and a substrate processing method for performing the selected processing on a substrate to be processed in a processing tank, In particular, the substrate processing apparatus and the substrate processing method which can improve the uniformity of the processing in the surface of the board to be processed. [Prior Art] A case where a substrate to be processed of a semiconductor wafer or a glass substrate is immersed in a processing liquid is widely used. and, Two or more types of treatment liquids are sequentially supplied in one treatment tank, Further, a substrate processing apparatus and a substrate processing method which perform a plurality of processing in the same processing tank are known. The treatment of using a chemical solution in the same tank is disclosed in Japanese Laid-Open Patent Publication No. Hei 8- 1 95 3 72. And the subsequent washing treatment using pure water -5-200847248. In this example, the substrate to be processed is immersed in a treatment tank in which a chemical solution is stored. Forming a stirring flow in the treatment tank, While replenishing the liquid, Process the substrate being processed. According to such a method, The concentration of the chemical solution can be made uniform in the treatment tank. and, Washing treatment is done by: The process of supplying pure water into the treatment tank in such a manner that a stirring flow can be formed in the treatment tank, And a process of supplying pure water into the treatment tank in such a manner that an upflow can be formed in the treatment tank, Come on. According to such washing treatment, Then, pure water can be used to replace the liquid in the treatment tank. The substrate to be processed can be uniformly washed. A treatment method similar to the treatment method described in the above-mentioned Japanese Patent Laid-Open Publication No. Hei No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. Hei No. but, The washing treatment is to disclose a process in which pure water can be supplied into the treatment tank in such a manner that a stirring flow can be formed in the treatment tank. And one of the works for supplying pure water into the treatment tank in such a manner as to form an upward flow in the treatment tank (paragraph 0083 of JP-A-2001-274133). on the other hand, In Japanese Patent No. 3 3 43 03 3, it is possible to store the treatment liquid in the treatment tank, Forming an upflow in the treatment tank, The treatment liquid is replenished in the treatment tank, The substrate to be processed is disposed in the processing tank for processing, and, It is disclosed that the constitution of the Japanese Patent No. 3 3 43 03 3 can be applied to sequentially supply a plurality of types of processing liquids to the processing tanks. Performing a plurality of processes in a single processing tank, For example, etching treatment and water washing treatment (Patent No. 3 3 43 03 3, paragraph 003 0 however), as disclosed in Japanese Laid-Open Patent Publication No. 2001-274133, or No. 33,430,033, When pure water is supplied to the treatment tank so that an upward flow can be formed in the treatment tank, the chemical liquid in the treatment tank is replaced with pure water. As described in the column of [The problem to be solved by the invention] of JP-A-8-95 3 72, When the substrate to be processed is disposed in the processing tank, the portion disposed above the surface of the substrate to be processed is disposed between the portion disposed above and the portion disposed below. The degree of treatment will be uneven. also, After in-depth study by the inventors of this case, According to the method disclosed in Japanese Laid-Open Patent Publication No. 8 - 1 9 5 3 72, The uniformity of the treatment in the surface of the substrate to be processed can be ensured depending on the type of the treatment liquid. However, when a part of the liquid is used as a treatment liquid, The uniformity of the treatment in the surface of the substrate to be processed is remarkably lowered. In this regard, For example, JP-A-200 1 -274 1 3 3 or JP-A-2002-01 00605, For the purpose of ensuring the homogeneity of the surface of the substrate to be processed, Various research and development are underway. however, After in-depth study by the inventors of this case, Although depending on the type of liquid used for treatment, To some extent, the uniformity of the processing in the plane of the substrate to be processed can be ensured by such known methods. But when using a part of the liquid, Sure enough, the uniformity of the treatment in the surface of the substrate to be processed is significantly reduced. According to the above insights obtained by the inventors of this case, In order to ensure the uniformity of the processing in the plane of the substrate to be processed in the processing of the substrate to be processed as described above, Process efficiently, However, it is necessary to change the processing method of the substrate to be processed in accordance with the type of the chemical solution. and, When the treated substrate is treated with a different chemical solution, The requirements for the uniformity of the processing in the panel surface of the substrate to be processed may vary depending on the processing. In this case, The processing method for changing the substrate to be processed according to the requirement of uniformity is valid from -7 to 200847248. [Summary of the Invention] That is, The present invention is conceived in consideration of such points, The object of the present invention is to provide a substrate processing apparatus and a substrate processing method for performing a plurality of processing treatments on a substrate to be processed using two or more types of processing liquids in one processing tank. In particular, it relates to a substrate processing apparatus and a substrate method which can improve the uniformity of the processing in the surface of the substrate to be processed. also, An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of continuously performing a plurality of types of processing using a chemical liquid on a substrate to be processed in the same processing tank. In particular, while the uniformity of the processing in the surface of the substrate to be processed is improved, A substrate processing apparatus and a substrate processing method capable of efficiently performing a plurality of processes. also, SUMMARY OF THE INVENTION An object of the present invention is to provide a process for selecting one from a plurality of processes using different kinds of chemical liquids, a substrate processing apparatus and a substrate processing method for performing the selected processing on the substrate to be processed in the processing tank, In particular, the substrate processing apparatus and the substrate processing method which can improve the uniformity of the processing in the surface of the board to be processed. The inventors of this case have conducted in-depth research, When it is known that a chemical solution having a significantly high reactivity with the substrate is used, For example, when ammonia water is used to etch the silicon wafer, The extent to which the processing of the board surface of the substrate is performed, Not only the concentration of the treatment liquid near the surface of the substrate, The flow of the treatment liquid in the vicinity of the plate surface of the substrate, For example, the flow rate will also be affected. The first substrate processing method of the present invention described below, Substrate processing device, Program and program recording media is root -8 - 200847248 Based on such insights to solve the above problems. The first substrate processing method of the present invention is characterized by: a rectifying member is provided inside, And arranging a substrate in the first region including the first region on the upper side of the flow regulating member and the first region on the lower side of the flow regulating member; a process of immersing the substrate in the treatment liquid accumulated in the treatment tank; Supplying the chemical solution to the second region of the treatment tank, The chemical liquid is caused to flow from the second region to the first region via the flow regulating member. Forming an upward flow in the vicinity of at least the substrate in the first region, a process of replacing the treatment liquid in the treatment tank with the chemical liquid; And supplying water to the second region of the processing tank, wherein the water flows from the second region to the first region via the rectifying member. Forming an upward flow in the vicinity of at least the substrate in the first region, The process of replacing the above-mentioned chemical liquid in the treatment tank with the above water. According to such a substrate processing method, The method of forming an upward flow in a treatment tank in which the substrate is stored and the processing liquid is stored is The administration solution is supplied to the treatment tank. and, After the treatment tank is replaced by the liquid medicine, In such a way as to be able to form an upflow in the processing tank, Supply water to the treatment tank. In any case, an upflow is formed at least in the vicinity of the above substrate. therefore, It is possible to form an upflow by uniformity, The flow of the liquid in the vicinity of the plate surface of the substrate is substantially uniform in the plate surface. the result, Regardless of the type of liquid, The uniformity of the treatment in the plane of the substrate can be improved. also, According to such a substrate processing method, Even if a liquid medicine composed of ammonia water having a strong reactivity of -9-200847248 is used, It is also possible to process substrates such as wafers substantially uniformly. The term "chemical liquid composed of ammonia water" as used herein means an aqueous solution containing ammonia as a main component. An aqueous solution containing a small amount of a component or the like other than ammonia and ammonia (e.g., a surfactant) is also contained. In addition, The above treatment liquid is preferably water. also, The treatment liquid to be replaced by the chemical solution is preferably water. In the first substrate processing method of the present invention, The supply amount per unit time of the chemical liquid supplied to the treatment tank in the process of replacing the treatment liquid in the treatment tank with the chemical liquid, The supply amount per unit time of the water supplied to the treatment tank in the process of replacing the chemical liquid in the treatment tank with the water described above is substantially the same. According to such a substrate processing method, It can improve the uniformity of the processing in the wafer surface, In particular, the uniformity of the processing in the plane of the wafer along the direction corresponding to the vertical direction when the wafer is placed in the processing tank In the first substrate processing method of the present invention, Arranging the substrate on the first region of the processing tank, The processing liquid may be supplied to the first region from the upper side supply pipe of the first region connected to the processing tank. And supplying the processing liquid to the second region from a supply pipe below the second region connected to the processing tank. Further, the process of accumulating the treatment liquid in the treatment tank is carried out. According to such a substrate processing method, The treatment liquid can be quickly filled into the treatment tank. With this, The processing of the substrate can be performed efficiently. and, In such a first substrate processing method, Arranging the above-mentioned substrate in the above-mentioned area -10- 200847248 The above-mentioned first area of the processing tank may further have: The substrate is placed in the first region of the processing tank in which the processing liquid is stored. According to such a substrate processing method, Then, the substrate can be stably immersed in the treatment liquid. also, In the first substrate processing method of the present invention, The above rectifying member is composed of: Has a large number of through holes, And forming a rectifying plate in which the processing tank is divided into the first region and the second region, The liquid supplied to the second region, Through the through hole of the above rectifying plate, The second region flows into the first region. According to such a substrate processing method, By means of a simple rectifying member, An upward flow having uniformity in the horizontal direction is formed in the first region of the treatment tank. The liquid is allowed to flow from the second region of the treatment tank to the first region. also, The first substrate processing method of the present invention, After supplying the chemical liquid and replacing the processing liquid in the treatment tank with the chemical liquid, More: Supplying the chemical solution to the second region of the treatment tank, And via the above rectifying member, Flowing the chemical solution from the second region to the first region, Forming an upward flow in the vicinity of at least the substrate in the first region, The substrate is immersed in the treatment tank in the treatment tank. According to such a substrate processing method, The uniformity of the treatment in the surface of the substrate can be ensured. Adjust the degree of processing on the substrate. also, The first substrate processing method of the present invention, After supplying the water and replacing the chemical liquid in the treatment tank with the water, it is more -11 - 200847248: Supplying water to the first region of the treatment tank, Further, the liquid is agitated in the vicinity of at least the substrate in the first region. According to such a substrate processing method, Because the liquid is stirred near the substrate, Therefore, the attachment attached to the surface of the substrate can be removed with a high removal rate. also, Alternatively, in the process of supplying the water and stirring the liquid in the first region in the treatment tank, Supplying water to the first region of the treatment tank, Water is supplied to the second region of the treatment tank. According to such a substrate processing method, This facilitates the lifting of the deposits removed from the substrate above the processing bath. With this, It is possible to prevent the attached matter from being attached to the substrate again. also, In at least one of the above-mentioned works of the first substrate processing method of the present invention, It is also possible to cause ultrasonic waves to occur in the liquid in the processing tank. According to such a substrate processing method, Then, the adhering matter attached to the surface of the substrate can be removed with a high removal rate. The first substrate processing apparatus of the present invention is characterized by: Processing tank, The system includes a first region for accommodating the substrate, And a second region disposed below the first region; Rectifying member, Provided between the first region and the second region in the processing tank; Lower side supply pipe, It is connected to the second region of the processing tank, At least the chemical liquid and water can be supplied to the switching mechanism of the second region -12-200847248 in the above-mentioned processing tank. It is connected to the lower side supply pipe, Switching the supply of liquid from the lower supply pipe; And control device, It is connected to the above switching mechanism, Controlling the supply of the liquid from the lower supply pipe to the second region of the processing tank, also, The above control device, Controlling the above switching mechanism, Further, it is possible to supply the dosing liquid to the second region of the treatment tank in which the processing liquid is stored and to accommodate the substrate, And via the above rectifying member, The chemical liquid is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, The treatment liquid in the treatment tank is replaced by the above chemical solution, then, Supplying water to the second region of the treatment tank, Via the above rectifying member, The water is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, The chemical liquid in the treatment tank is replaced with the water. According to such a substrate processing apparatus, Then, an upward flow is formed in the treatment tank in which the substrate is stored and the treatment liquid is stored. The drug solution is supplied to the treatment tank. and, After the treatment tank is replaced by the liquid medicine, In such a way as to be able to form an upflow in the treatment tank, Supply water to the treatment tank. In any case, an upflow is formed at least in the vicinity of the above substrate. therefore, It can form an upflow by uniformity, The flow of the liquid in the vicinity of the plate surface of the substrate is substantially uniform in the plate surface. the result, Regardless of the type of liquid, The uniformity of the treatment in the plane of the substrate can be improved. also, According to such a substrate processing apparatus, Even if a liquid medicine composed of highly reactive ammonia water is used, It is also possible to process substrates such as Shi Xi-13-200847248 wafers substantially uniformly. The term "chemical liquid composed of ammonia water" as used herein means an aqueous solution containing ammonia as a main component. An aqueous solution containing a small amount of a component or the like other than ammonia and ammonia (e.g., a surfactant) is also contained. In addition, The treatment liquid to be replaced by the chemical solution is preferably water. In the first substrate processing apparatus of the present invention, The above control device controls the above switching mechanism, When the treatment liquid in the treatment tank is replaced by the chemical liquid, The supply amount per unit time of the chemical liquid supplied to the treatment tank can be changed when the chemical liquid in the treatment tank is replaced with the water. The supply amount of the water supplied to the treatment tank per unit time is substantially the same. According to such a substrate processing apparatus, It can improve the uniformity of processing in the surface of the wafer. In particular, the uniformity of the processing in the plane of the wafer in the direction corresponding to the vertical direction when the wafer is placed in the processing tank. also, In the first substrate device of the present invention, The rectifying member has a rectifying plate forming a plurality of through holes. The liquid supplied to the second region, Through the through hole of the above rectifying plate, The second region flows into the first region. According to such a substrate processing apparatus, By means of a simple rectifying member, An upward flow having uniformity in the horizontal direction is formed in the first region of the treatment tank. The liquid is allowed to flow from the second region of the treatment tank to the first region. also, The first substrate processing apparatus of the present invention, More: Connecting to the first region of the processing tank, The liquid supply side upper supply pipe may be supplied to the first region of the treatment tank. -14- 200847248 The above switching mechanism is coupled to the upper supply pipe, The supply of the liquid from the upper supply pipe can be switched, The control device controls the supply of the liquid from the upper supply pipe to the first region of the processing tank. According to such a substrate processing apparatus, Then, for the substrate disposed in the i-th region, The liquid is directly supplied from the upper supply pipe. With this, The substrate can be handled appropriately. also, Such a first substrate processing apparatus, More: In a manner in which the arrangement positions along the vertical direction are different from each other, a plurality of discharge members provided in the first region of the processing tank, The upper supply pipe is coupled to the discharge member, The liquid is discharged into the first region of the treatment tank through the discharge member. also, In such a first substrate processing apparatus, The above control device can control the above switching mechanism, And before supplying the chemical liquid from the lower supply pipe to the processing tank, The processing liquid can be supplied from the upper supply pipe to the first region. And supplying the processing liquid to the second region from the lower supply pipe, The treatment liquid is stored in the treatment tank. According to such a substrate processing apparatus, The treatment liquid can be quickly filled into the treatment tank. With this, The processing of the substrate can be performed efficiently. also, In such a first substrate processing apparatus, The above control device can control the above switching mechanism, After the water is supplied from the lower supply pipe to the treatment tank, The water can be supplied from the upper supply pipe to the first region, And stirring the liquid in the vicinity of at least the substrate in the first region -15-200847248. According to such a substrate processing apparatus, Because the liquid is stirred near the substrate, Therefore, the attachment attached to the surface of the substrate can be removed with a high removal rate. also, In such a first substrate processing apparatus, The above control device can control the above switching mechanism, When the liquid is stirred in the first region in the treatment tank, The water can be supplied from the upper supply pipe to the first region. Further, water is supplied from the lower supply pipe to the second region. According to such a substrate processing apparatus, This facilitates the lifting of the deposits removed from the substrate above the processing bath. With this, It is possible to prevent the attached matter from being attached to the substrate again. Further, in the first substrate processing apparatus of the present invention, The above control device can control the above switching mechanism, And supplying the above liquid medicine from the lower side supply pipe, After replacing the treatment liquid in the treatment tank with the chemical liquid, The chemical supply can be continuously supplied from the lower supply pipe to the second region. Via the above rectifying member, Flowing the chemical solution from the second region to the first region, Forming an upward flow in the vicinity of at least the substrate in the first region, The substrate is immersed in the treatment liquid in the treatment tank. According to such a substrate processing apparatus, The uniformity of the treatment in the surface of the substrate can be ensured. Adjust the degree of processing on the substrate. also, The first substrate processing apparatus of the present invention, Can be more: A supersonic wave generating device for generating a supersonic wave in the processing tank. According to such a substrate processing apparatus, Then, the adhering matter attached to the surface of the substrate can be removed with a high removal rate. -16- 200847248 The first program of the present invention, a program executed by a control device that controls the substrate processing apparatus, The substrate processing apparatus is provided with: a first region including the receiving substrate, and a second region disposed below the first region, And a rectifying member provided between the first region and the second region in the processing tank, Its characteristics are: Executed by the above control device, A processing method for a substrate including the following processes is performed on a substrate processing apparatus, Arranging the substrate in the first region of the processing tank, a process of immersing the substrate in the treatment liquid accumulated in the treatment tank; Supplying the chemical solution to the second region of the treatment tank, And via the above rectifying member, The chemical liquid is caused to flow from the second region to the first region, Forming an upward flow in the vicinity of at least the substrate in the first region, a process of replacing the treatment liquid in the treatment tank with the chemical liquid; And supplying water to the second region of the treatment tank, The water flows into the first region from the second region via the rectifying member. Forming an upward flow in the vicinity of at least the substrate in the first region, The process of replacing the above-mentioned chemical liquid in the treatment tank with the above water. The first recording medium of the present invention, Recording a recording medium recorded by a control device that controls the substrate processing apparatus, The substrate processing apparatus has: a processing region including a first region in which the substrate is housed and a second region disposed under the first region; And a rectifying member provided between the first region and the second region in the processing tank, Its characteristics are: Executed by the above control device, The -17-200847248 processing method including the substrate of the following work is performed on the substrate processing apparatus, Arranging the substrate in the first region of the processing tank, a process of immersing the substrate in the treatment liquid accumulated in the treatment tank; Supplying the chemical solution to the second region of the treatment tank, And via the above rectifying member, The process of replacing the treatment liquid in the treatment tank with the chemical liquid while forming the upward flow in the vicinity of at least the substrate in the first region while flowing the chemical solution from the second region to the first region ; And supplying water to the second region of the treatment tank, The water flows into the first region from the second region via the rectifying member. Forming an upward flow in the vicinity of at least the substrate in the first region, The process of replacing the above-mentioned chemical liquid in the treatment tank with the above water. also, The inventors of this case have conducted in-depth research, Knowing the extent of the treatment of the surface of the substrate to be processed, Not only the concentration of the treatment liquid in the vicinity of the surface of the substrate to be processed, The flow of the treatment liquid in the vicinity of the plate surface of the substrate, For example, the flow rate will also be affected. The second substrate processing method of the present invention described below, Substrate processing device, Program and program recording media, And a third substrate processing method of the present invention, Substrate processing device, Programs and program recording media are based on such insights. According to the reactivity of the chemical solution used for treatment with the substrate to be processed, Or a requirement for the uniformity of the conditions in the substrate to be processed, etc. The flow of the liquid in the treatment tank is appropriately changed according to each treatment, Solve the above problems. A second substrate processing method of the present invention, It is used internally with a rectifying member. And a method of processing the substrate by including a first region -18-200847248 located on the upper receiving substrate of the flow regulating member and a processing groove located at a second region on the lower side of the flow regulating member. Its characteristics are: Supplying the first chemical liquid to the second region of the treatment tank, Via the above rectifying member, The first chemical liquid is caused to flow from the second region to the first region in which the substrate is housed, An upward flow is formed in the vicinity of at least the substrate in the first region. a process of processing the substrate by the first chemical solution; And supplying the second chemical liquid to the first region of the treatment tank, Or supplying the second chemical liquid to the first region and the second region of the processing tank, Stirring the liquid in the vicinity of at least the substrate in the first region, The substrate is processed by the second chemical solution. According to such a substrate processing method, When a plurality of types of processing using a chemical liquid are applied to the substrate in the same processing tank, The supply method of the chemical liquid in the treatment tank is changed in each treatment. With this, The substrate can be processed by a method suitable for each treatment. the result, The substrate can be efficiently processed at the same time, and the uniformity of the processing in the board surface of the substrate can be improved. In addition, As a processing example of using the first chemical liquid as such a substrate processing apparatus, A treatment using a chemical solution having a significantly high reactivity with a substrate can be used. For example, an etching treatment using a wafer of a first chemical liquid composed of ammonia water is used. on the other hand, As an example of processing using the second chemical liquid as such a substrate processing apparatus, A treatment liquid having a lower reactivity with the substrate than the first chemical solution may be used. For example, an etching treatment of a 5th wafer of a second chemical liquid composed of hydrogen fluoride water is used. The term "drug from ammonia" means that the aqueous solution containing ammonia as a main component also contains one or more components other than ammonia and ammonia. -19- 200847248 (for example, surfactant) Mixed aqueous solution. same, The so-called "chemical liquid composed of hydrogen fluoride water" means an aqueous solution containing hydrogen fluoride as a main component. An aqueous solution containing a small amount of a component other than hydrogen fluoride and hydrogen fluoride (e.g., a surfactant) is also contained. A second substrate processing method of the present invention, After the process of processing the substrate by the first chemical solution, Can be more: Supplying water to the second region of the treatment tank, And via the above rectifying member, The water is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, The first chemical liquid in the treatment tank is replaced with the water. According to such a substrate processing method, The uniform flow in the treatment tank can be formed by uniformity. The flow of the liquid in the vicinity of the plate surface of the substrate is substantially uniform in the plane of the board. The first chemical solution in the treatment tank is replaced with water. With this, Further, the uniformity of the treatment using the first chemical liquid in the surface of the substrate can be improved. Such a second substrate processing method, After the work of replacing the first chemical liquid in the treatment tank by the water, Can be more: Supplying water to the first region of the treatment tank or supplying water to the first region and the second region of the treatment tank, Further, the liquid is agitated in the vicinity of at least the substrate in the first region. According to such a substrate processing method, Because the liquid is stirred near the substrate, Therefore, the attachment attached to the surface of the substrate can be removed with a high removal rate. In particular, when water is supplied not only in the first area but also in the second area, The deposits removed from the substrate can be promoted to float above the processing tank. Borrow -20- 200847248 The attached matter to be removed can be prevented from adhering to the substrate again. also, In the second substrate processing method of the present invention, The process of processing the substrate by the first chemical liquid may include supplying the first chemical liquid to the second region in which the processing liquid is stored in the first region and the processing chamber of the substrate is accommodated in the first region. , And via the above rectifying member, The first chemical liquid is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, The process of replacing the treatment liquid in the treatment tank with the first chemical liquid is performed. According to such a substrate processing method, The uniform flow in the treatment tank can be formed by uniformity. The flow of the liquid in the vicinity of the plate surface of the substrate is substantially uniform in the plane of the board. The liquid in the vicinity of the plate surface of the substrate is replaced with the treatment liquid to form the first chemical liquid. With this, Further, the uniformity of the treatment using the first chemical liquid in the surface of the substrate can be improved. also, As above, After the process of processing the substrate by the first chemical solution, Also has: Supplying water to the second region of the treatment tank, And via the above rectifying member, The water is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, When the above-mentioned first chemical liquid in the treatment tank is replaced with the water, It is preferable that the supply amount per unit time of the first chemical liquid supplied to the treatment tank in the process of replacing the treatment liquid in the treatment tank with the first chemical liquid is replaced with the treatment by the water. The supply amount of the water supplied to the treatment tank in the process of the first chemical liquid in the tank is the same as the supply amount per minute. According to such a substrate processing method, It can improve the uniformity of the wafer in the surface -21 - 200847248 In particular, the uniformity of the processing in the plane of the wafer along the direction corresponding to the vertical direction when the wafer is placed in the processing tank 〇 In the second substrate processing method such as The substrate is processed by the first liquid, After replacing the above-mentioned treatment liquid in the treatment tank with the first chemical liquid, Can include more: Supplying the first chemical liquid to the second region of the treatment tank, And via the above rectifying member, Flowing the first chemical liquid from the second region to the first region, Forming an upward flow in the vicinity of at least the substrate in the first region, The substrate is immersed in the first chemical liquid in the treatment tank. According to such a substrate processing method, The uniformity of the treatment using the first chemical liquid in the surface of the substrate can be ensured. Adjust the degree of processing on the substrate. In such a second substrate processing method, The above treatment liquid may be water. or, Such a second substrate processing method, After the above substrate is processed by the second chemical solution, Can be more: The work of replacing the second chemical liquid in the treatment tank with water, After the process of processing the substrate by the second chemical solution, The process of processing the substrate by the first chemical solution is performed. In the process of processing the substrate by the first chemical liquid, the processing liquid substituted by the first chemical liquid may be supplied in a process of replacing the second chemical liquid in the processing tank with the water. To the above water in the treatment tank. According to such a substrate processing method, It is not necessary to separately provide a process for storing the treatment liquid -22-200847248 in the treatment tank, so that the uniformity of the treatment can be maintained at a high level. The time required for processing is shortened. also, A second substrate processing method of the present invention, After the process of processing the substrate by the second liquid, More: Water is supplied to the first region of the treatment tank, Or supplying water to the first region and the second region of the treatment tank, Agitating the liquid in the vicinity of at least the substrate in the first region, The above-mentioned second chemical liquid in the treatment tank is replaced with the above water. According to such a substrate processing method, Because the liquid is stirred near the substrate, Therefore, the concentration of the second chemical liquid in the vicinity of the plate surface of the substrate can be substantially uniformly maintained in the surface of the board. The second chemical solution in the treatment tank is replaced with water in a short time. In particular, when water is supplied to the second area in the first area, It is possible to promote the deposition of the adhering matter removed from the substrate to the upper side in the treatment tank. With this, It is possible to prevent the removed adherend from adhering to the substrate again. In the second substrate processing method of the present invention, The above substrate is processed by the second liquid, Can also include: The second chemical liquid is supplied to the first region of the processing tank in which the processing liquid is stored in the first region and the substrate is accommodated in the first region, Or supplying the second chemical liquid to the first region and the second region of the processing tank in which the processing liquid is stored in the first region and the substrate is accommodated in the first region. Agitating the liquid in the vicinity of at least the substrate in the first region, The treatment of the treatment liquid in the treatment tank is performed by the second chemical liquid. According to such a substrate processing method, The concentration of the second chemical liquid in the vicinity of the plate surface of the substrate can be uniformly maintained in the plate surface substantially -23-200847248. Increase the concentration to the desired level with time. In such a second substrate processing method, The process of treating the substrate by the second chemical solution, After replacing the above-mentioned treatment liquid in the tank with the second chemical liquid, Can include more: Supplying the second chemical liquid to the first region of the above treatment or supplying the second chemical liquid to the upper first region and the second region of the processing tank, While stirring the liquid in the vicinity of at least the substrate in the first region, The substrate is immersed in the second chemical liquid in the treatment tank. According to such a substrate processing method, The uniformity of the treatment using the second chemical liquid in the surface of the substrate can be ensured. Adjust the degree of processing on the substrate. In such a second processing method, The above treatment liquid may be water. Or such a second substrate processing method, After the process of processing the substrate by the first chemical liquid, Can be more: The work of replacing the first chemical liquid of the treatment tank with water, After the process of processing the upper substrate by the first chemical solution, The process of processing the substrate by the second chemical solution described above is performed. In the process of processing the substrate by the second chemical liquid, the treatment liquid displaced by the second chemical liquid is The water supplied to the treatment tank in the process of replacing the first chemical liquid in the treatment tank is replaced by the above. According to such a substrate processing method, It is not necessary to additionally set up a project that will process the accumulation in the treatment tank. Therefore, it is possible to maintain the treatment at the high level without being able to maintain the treatment. The time required for processing is shortened. The short water tank is described above on the upper plate and the upper surface of the engineering water is -24- 200847248 The treatment liquid is preferably water. also, In the second substrate processing method of the present invention, First of all, The process of processing the substrate by the second chemical solution can be performed. Secondly, Performing a process of processing the substrate by the first chemical solution, then, The process of treating the substrate by the second chemical liquid is performed again. also, In the second substrate processing method of the present invention, The above rectifying member can be: Has a large number of through holes, And forming a rectifying plate in which the processing tank is divided into the first region and the second region, The liquid supplied to the second region, Through the through hole of the above rectifying plate, The second region flows into the first region. According to such a substrate processing method, By means of a simple rectifying member, An upward flow having uniformity in the horizontal direction is formed in the first region of the treatment tank. The liquid is allowed to flow from the second region of the treatment tank to the first region. also, In at least one of the above-described works of the second substrate processing method of the present invention, Ultrasonic waves can be generated in the liquid in the above treatment tank. According to such a substrate processing method, Then, the adhering matter attached to the surface of the substrate can be removed with a high removal rate. The second substrate processing apparatus of the present invention is characterized by: Processing tank, Its system contains: The first area of the substrate is housed, And a second region disposed below the first region; Rectifying member, Provided between the first region and the second region in the processing tank; -25- 200847248 Lower side supply pipe, The second chemical region connected to the processing tank may supply at least the first chemical liquid and water to the second region of the processing tank; Upper supply pipe, The first region ‘connected to the processing tank may supply at least the second chemical liquid to the first region switching mechanism of the processing tank. The system is connected to the lower supply pipe and the upper supply pipe to switch the supply of liquid from the lower supply pipe and the upper supply pipe; And control device, It is connected to the above switching mechanism, Controlling the supply of the liquid from the lower supply pipe to the second region of the treatment tank and the supply of the liquid from the upper supply pipe to the first region of the treatment tank. also, The above control device controls the switching mechanism, Further, the first chemical liquid can be supplied to the second region of the processing tank, Via the above rectifying member, The first chemical liquid is caused to flow from the second region to the first region in which the substrate is housed, An upward flow is formed in the vicinity of at least the substrate in the first region. The substrate is treated by the first chemical solution. and, Before or after the treatment of the above substrate using the first chemical liquid, Supplying the second chemical liquid to the first region of the processing tank or supplying the second chemical liquid to the first region and the second region of the processing tank, Agitating the liquid in the vicinity of at least the substrate in the first region, The substrate is treated by the second chemical solution. -26- 200847248 According to such a substrate processing apparatus, When a plurality of types of processing using a chemical liquid are applied to the substrate in the same processing tank, The supply method of the chemical liquid in the treatment tank is changed in each treatment. With this, The substrate can be processed by a method suitable for each treatment. the result, While efficiently performing multiple processing on the substrate, The uniformity of the treatment in the panel surface of the substrate can be improved. In addition, As a processing example of using the first chemical liquid as such a substrate processing apparatus, A treatment using a chemical solution having a significantly high reactivity with a substrate can be used. For example, an etching treatment using a wafer of a first chemical liquid composed of ammonia water is used. on the other hand, As an example of processing using the second chemical liquid as such a substrate processing apparatus, A treatment liquid having a lower reactivity with the substrate than the first chemical solution may be used. For example, an etching process using a tantalum wafer of a second chemical liquid composed of hydrogen fluoride water is used. The term "chemical liquid composed of ammonia water" as used herein means an aqueous solution containing ammonia as a main component. An aqueous solution containing a small amount of a component other than ammonia and ammonia (e.g., a surfactant) is also contained. same, The so-called "chemical liquid composed of hydrogen fluoride water" means an aqueous solution containing hydrogen fluoride as a main component. An aqueous solution containing a small amount of a component other than hydrogen fluoride and hydrogen fluoride (e.g., a surfactant) is also contained. In the second substrate processing apparatus of the present invention, The above control device can control the above switching mechanism, After the substrate is processed by the first chemical solution, Water can be supplied from the lower supply pipe to the second region of the processing tank, Via the above rectifying member, The water is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, The first chemical liquid in the treatment tank is replaced with the water. -27- 200847248 According to such a substrate processing apparatus, The uniform flow in the treatment tank can be formed by uniformity. The flow of the liquid in the vicinity of the plate surface of the substrate is substantially uniform in the plane of the board. The first chemical solution in the treatment tank is replaced with water. With this, Further, the uniformity of the treatment using the first chemical liquid in the surface of the substrate can be improved. In such a second substrate processing apparatus, The above control device can control the above switching mechanism, After replacing the first chemical liquid in the treatment tank with the water, Supplying water from the upper supply pipe to the first region, Or supplying water from the upper supply pipe to the first region and supplying water from the lower supply pipe to the second region. The liquid is stirred in the vicinity of at least the substrate in the first region. According to such a substrate processing apparatus, Because the liquid is stirred near the substrate, Therefore, the attachment attached to the surface of the substrate can be removed with a high removal rate. In particular, when water is supplied not only in the first area but also in the second area, The deposits removed from the substrate can be promoted to float above the processing tank. By this, The attached matter to be removed can be prevented from adhering to the substrate again. also, In the second substrate processing apparatus of the present invention, The above control device can control the above switching mechanism, When the substrate is processed by the first chemical liquid, The first chemical liquid can be supplied from the lower supply pipe to the second region in which the processing liquid is stored and the processing tank of the substrate is accommodated in the first region. And via the above rectifying member, The first chemical solution flows into the first region from the second region, Forming an upward flow in the vicinity of at least the substrate in the i-th region, The treatment liquid in the treatment tank is replaced with the first chemical liquid. -28- 200847248 According to such a substrate processing apparatus, The uniform flow in the treatment tank can be formed by uniformity. The flow of the liquid in the vicinity of the plate surface of the substrate is substantially uniform in the plane of the board. The liquid in the vicinity of the plate surface of the substrate is replaced with the treatment liquid to form the first chemical liquid. With this, Further, the uniformity of the treatment using the first chemical liquid in the surface of the substrate can be improved. Again, as mentioned above, After the substrate is processed by the first chemical solution, Supplying water to the second region of the treatment tank, And through the above rectifying members, Flowing the water from the second region to the first region Forming an upward flow in the vicinity of at least the substrate in the first region, When the first chemical liquid in the treatment tank is replaced with the water, The above control device can further control the above switching mechanism, And the supply amount per unit time of the chemical liquid supplied to the processing tank when the processing liquid in the processing tank is replaced by the first chemical liquid, The supply amount per unit time of the water supplied to the treatment tank when the chemical liquid in the treatment tank is replaced by the water is substantially the same. According to such a substrate processing method, It can improve the uniformity of the processing in the wafer surface, In particular, the uniformity of the processing in the plane of the wafer in the direction corresponding to the vertical direction when the wafer is placed in the processing tank 〇 in the second substrate processing apparatus such as The above control device can control the above switching mechanism, When the substrate is treated by the first chemical liquid, After replacing the treatment liquid in the treatment tank with the first chemical liquid, The first chemical liquid is supplied from the lower supply pipe to the second region ’ of the processing tank, and the rectifying member is passed through the rectifying member. The first chemical liquid • 29-200847248 is caused to flow into the first region from the second region, and the substrate is immersed in the treatment tank while forming an upward flow in the vicinity of at least the substrate in the first region. The above first chemical solution. According to such a substrate processing apparatus, The uniformity of the treatment in the surface of the substrate can be ensured. Adjust the degree of processing on the substrate. In such a second substrate processing apparatus, The above treatment liquid may be water. or, In such a second substrate processing apparatus, The above control device can be the above switching mechanism, After the substrate is processed by the second chemical solution, Replacing the second chemical liquid in the treatment tank with water, After the substrate is processed by the second chemical solution, The substrate can be processed by the first chemical solution. The treatment liquid displaced by the first chemical liquid when the substrate is processed by the first chemical liquid may be supplied to the treatment tank when the second chemical liquid in the treatment tank is replaced. water. According to such a substrate processing apparatus, It is not necessary to separately set up a project to store the treatment liquid in the treatment tank. Therefore, the uniformity of the treatment can be maintained at a high level, The time required for processing is shortened. also, In the second substrate processing apparatus of the present invention, The above control device can control the above switching mechanism, After the substrate is processed by the second chemical solution, Supplying water from the upper supply pipe to the first region, Or supplying water from the upper supply pipe to the first region and supplying water from the lower supply pipe to the second region. While stirring the liquid in the vicinity of at least the substrate in the first region, The second chemical liquid in the treatment tank is replaced with the water. According to such a substrate processing apparatus, Then, the liquid is mixed in the vicinity of the substrate -30-200847248, so that the concentration of the second chemical liquid in the vicinity of the surface of the substrate can be substantially uniformly maintained in the surface of the board. The second chemical solution in the treatment tank is replaced with water in a short time. In particular, when water is supplied to the second area in the first area, It can promote the floating of the float in the treatment tank to the top. Take this The attached matter to be removed can be prevented from adhering to the substrate again. also, In the second substrate processing apparatus of the present invention, The above control device can control the above switching mechanism, When the substrate is processed by the second chemical solution, The first chemical solution can be supplied from the upper supply pipe to the first region in which the processing liquid is stored and the processing groove of the substrate is accommodated in the first region. Or the second chemical liquid is supplied from the upper supply pipe to the first region in which the processing liquid is accumulated and the processing tank of the substrate is accommodated in the first region, Supplying the second chemical liquid from the lower supply pipe to the second region of the processing tank, While stirring the liquid in the vicinity of at least the substrate in the first region, The treatment liquid in the treatment tank is replaced with the second chemical liquid. According to such a substrate processing apparatus, The concentration of the second chemical liquid in the vicinity of the surface of the substrate can be substantially uniformly maintained in the surface of the substrate. Raise to the desired concentration in a short time. In such a second substrate processing apparatus, The above control device can control the above switching mechanism, When the substrate is processed by the second chemical solution, After replacing the treatment liquid in the treatment tank with the second chemical liquid, The second chemical liquid can be supplied from the upper supply pipe to the first region. Or supplying the second chemical liquid from the upper supply pipe to the first region, Supplying the second chemical liquid from the lower supply pipe to the second region of -31 - 200847248, And agitating the liquid in the vicinity of at least the substrate in the first region, The substrate is immersed in the treatment liquid in the treatment tank. According to such a substrate processing apparatus, The uniformity of the treatment using the second chemical liquid in the surface of the substrate can be ensured. Adjust the degree of processing on the substrate. In such a second substrate processing apparatus, The above treatment liquid may be water. or, In such a second substrate processing apparatus, The above control device can be the above switching mechanism, After the substrate is processed by the first chemical solution, Replacing the first chemical liquid in the treatment tank with water, After the substrate is processed by the first chemical solution, The substrate can be processed by the second chemical solution. The treatment liquid displaced by the second chemical liquid when the substrate is processed by the second chemical liquid may be supplied to the treatment tank when the second chemical liquid in the treatment tank is replaced. water. According to such a substrate processing method, It is not necessary to separately set up a project to store the treatment liquid in the treatment tank. Therefore, the uniformity of the treatment can be maintained at a high level, The time required for processing is shortened. also, a second substrate processing apparatus of the present invention, The control device controls the switching mechanism, First, the substrate is processed by the second chemical solution. The substrate is processed by the first chemical solution. then, The substrate is treated again by the second chemical solution. also, In the second substrate processing apparatus of the present invention, The rectifying member has a rectifying plate that forms a plurality of through holes. The liquid supplied to the second region, Through the through hole of the above rectifying plate, From the second region, the flow rate is from -32 to 200847248 to the first region. According to such a substrate processing apparatus, it is possible to use a flow member, Forming a uniform upward flow in the first region of the treatment tank, The liquid is allowed to pass from the first region of the treatment tank. also, In the second substrate processing apparatus of the present invention, a plurality of discharge members in the first region which are disposed so as to be different from each other in a straight direction can be provided. The upper side to the discharge member, The liquid is discharged into the upper region via the discharge member. also, a second substrate processing apparatus of the present invention, Ultrasonic wave generation of liquid which can occur in the above-mentioned treatment tank, according to such a substrate processing apparatus, Therefore, it can be attached to the deposit of the board surface of the substrate. The second program of the present invention, a program executed by a device at a control substrate, The substrate processing apparatus includes a first region of the plate and a handle disposed below the first region, And a rectifying member disposed between the first region in the processing tank, Its characteristics are: Executed by the above control device, The following processing method is included in the substrate processing apparatus, Supplying the first rectifying member to the second region of the processing tank, The first chemical liquid is provided in the first region of the substrate from the second region, In the second area in the horizontal direction of the first simple configuration described above, it flows into the second preparation: The first of the processing tanks can be connected to the processing tank along the lead in the processing tank: Make a supersonic device. Removal rate to remove control of the device: a liquid containing the substrate in the second region and the substrate of the second region project, The upper stream flows into the containment area 1 to -33- 200847248, and an upflow is formed in the vicinity of the substrate. Working on the substrate by the upper side; And supplying the first region and the second region to the first region of the processing tank to the side of at least the substrate in the first region by the second chemical solution The substrate of the present invention is the second recording medium of the present invention. Recording a recording medium of a program executed by a control device of the device, The system has: a processing tank including a first region in which the substrate is housed and a second region below the arrangement region; And a rectifying member provided between the first region and the second region; Executed by the above control device, The following processing method is included in the substrate processing apparatus, Supplying the first rectifying member to the second region of the processing tank, The first chemical liquid is provided in the first region of the substrate from the second region, An upward flow is formed in the vicinity of the above-mentioned first substrate. Working on the substrate by the upper side; And supplying the first region and the second region to the first region of the processing tank to the side of at least the substrate in the first region by the second chemical solution The third substrate processing method of the present invention, Tied inside, And including the first chemical liquid to be stored in the upper side of the flow regulating member, and the chemical liquid, Or on the second liquid, Stir the liquid, Control substrate processing The substrate is processed in the first processing tank, and the above-mentioned characteristic is = chemical liquid of the substrate of the project, Flowing into the first chemical solution in the containment area 1 via the upper field, Or on the second liquid, Stir the liquid, Cheng. The rectifying member is provided with the first region and the position -34- 200847248 in the processing tank of the second region on the lower side of the rectifying member, a method of processing a substrate using one of a liquid and a second chemical solution, It is preferable to set a process for processing a substrate by the first chemical liquid and the second chemical liquid; And processing the substrate by the chemical liquid set as described above, and processing the substrate by the chemical liquid set as described above. When the chemical liquid to be set is the first chemical liquid, Supplying the first chemical liquid to the second region of the upper tank, And the first chemical liquid flows into the first region from the second region via the rectification, An upward flow is formed in at least the vicinity of the first region. While being treated by the above first liquid medicine, on the other hand, When the chemical liquid to be set is the second chemical liquid, the second chemical liquid is supplied to the first region of the processing tank, Or supplying the second chemical liquid to the first region and the second region of the upper tank, Agitating the liquid in the vicinity of at least the substrate in the first region, The substrate is treated by the second chemical solution. According to such a substrate processing method, When a plurality of kinds of treatments using the chemical liquid are performed on the same processing substrate, A method of supplying the liquid medicine in each of the treatment tanks. With this, The substrate can be processed in a suitable manner. the result, The uniformity in the plane of the substrate can be improved. Which is the first drug, Engineering processing components, When the substrate of the substrate of the substrate is In the case of the processing, the processing is changed by the processing in the tank. -35· 200847248 In addition, As such a substrate, It is possible to use a liquid surface composed of ammonia water instead of the substrate. As such a substrate processing apparatus, a drug composed of hydrogen fluoride water is used as the first embodiment, and a drug solution composed of aqueous ammonia is used. Also included is a chemical solution composed of a water-soluble hydrogen water in which a small amount of ammonia and ammonia surfactant is mixed. The third substrate processing liquid chemical of the present invention is also used to treat the substrate, and the chemical liquid in the processing tank is replaced by the above-mentioned chemical liquid. The second area supplies water, Water flows from the above second area to the collection, The flow in the first area mentioned above, While replacing the water with the above water, In the first region of the set processing tank, the processing of the at least the substrate in the first region and the second region is used to treat the chemical liquid having a significantly higher chemical efficiency. For example, the touch processing of the wafer. Another example of the treatment using the second chemical solution, Treatment of a lower liquid medicine, For example, etching of a liquid wafer. The term "liquid" means a component or more of a component containing ammonia as a main component (e.g., a boundary liquid). same, The so-called "a type of component (for example, a solution) other than an aqueous solution containing hydrogen fluoride as a main component. method, After being set by the above, Can be more: By water, the project, When the first liquid is described, Through the above-described rectifying member for the above processing, The first region containing the substrate is at least formed in the vicinity of the substrate, and the first chemical liquid is raised. When the liquid medicine is the second liquid medicine, For the above water, Or on the above processing tank; Supply the above water, While stirring the liquid near the first one, The second chemical solution was replaced with the above water -36-200847248. According to such a substrate processing method, When the first chemical liquid is accumulated in the treatment tank, By uniformly forming the upflow in the treatment tank, The flow of the liquid in the vicinity of the surface of the substrate can be made substantially uniform in the plane of the board. The first chemical solution in the treatment tank is replaced with water. With this, The uniformity of the treatment using the first chemical liquid in the surface of the substrate can be further improved. and, When the second chemical liquid is accumulated in the processing tank, Since the liquid is stirred in the vicinity of the substrate, Therefore, the concentration of the second chemical liquid in the vicinity of the surface of the substrate can be substantially uniformly maintained in the surface of the substrate. The second chemical solution in the treatment tank is replaced with water for a short period of time. In particular, when not only the first area but also the second area is also supplied with water, The deposits removed from the substrate can be promoted to float above the processing tank. With this, The attached matter to be removed can be prevented from adhering to the substrate again. also, In the third substrate processing method of the present invention, When the chemical liquid set as described above is the first chemical liquid, Processing the substrate by the chemical liquid set as described above, The system contains: The first chemical liquid is supplied to the second region in which the processing liquid is accumulated and the processing tank of the substrate is accommodated in the first region, And via the above rectifying member, The first chemical liquid is caused to flow from the second region to the first region, Forming an upward flow in the vicinity of at least the substrate in the first region, The work of replacing the treatment liquid in the treatment tank with the first chemical liquid is performed. The supply amount per unit time of the first chemical liquid supplied into the treatment tank in the process of replacing the treatment liquid in the treatment tank with the first chemical liquid, The supply amount per unit time of the water supplied to the treatment tank in the above-mentioned -37-200847248 first chemical liquid in the treatment tank by the water is substantially the same. According to such a substrate processing method, The uniformity of the treatment in the surface of the substrate can be further improved, In particular, uniformity of processing in the plane of the substrate in the direction corresponding to the vertical direction when the substrate is placed in the processing tank The above treatment liquid is preferably water. also, In the third substrate processing method of the present invention, The rectifying member has a plurality of through holes. And dividing the processing tank into the rectifying plates of the first region and the second region, The liquid supplied to the second region, Through the through hole of the above rectifying plate, The second region flows into the first region. According to such a substrate processing method, By means of a simple rectifying member, An upward flow having uniformity in the horizontal direction is formed in the first region of the treatment tank. The liquid is allowed to flow from the second region of the treatment tank to the first region. also, The third substrate processing method of the present invention, More: Entering a project for processing information on the substrate by the first chemical liquid and the second chemical liquid, According to the information entered above, The substrate is processed by which of the first chemical liquid and the second chemical liquid. According to such a substrate processing method, For example, the operator or the like can input the setting of which of the first chemical liquid or the second chemical liquid to be processed by the outside. -38- 200847248 Also, In the third substrate processing method of the present invention, In at least one of the above projects, Ultrasonic waves can be generated in the liquid in the above treatment tank. According to such a substrate processing method, Then, the adhering matter attached to the surface of the substrate can be removed with a high removal rate. A third substrate processing apparatus of the present invention, A substrate processing apparatus for processing a substrate using one of a first chemical liquid and a second chemical liquid, Its characteristics are equipped with: Processing tank, Its system contains: The first area of the substrate is housed, And a second region disposed below the first region; Rectifying member, Provided between the first region and the second region in the processing tank; Lower side supply pipe, The second chemical region connected to the processing tank can supply at least the first chemical liquid to the upper supply pipe in the second region f of the processing tank. The first region ‘connected to the processing tank is configured to supply at least the second chemical liquid to the first region 9 switching mechanism of the processing tank. The system is connected to the lower supply pipe and the upper supply pipe to switch the supply of liquid from the lower supply pipe and the upper supply pipe; And control device, It is connected to the above switching mechanism, Controlling the supply of the liquid from the lower supply pipe to the second region of the processing tank and the supply of the liquid -39-200847248 from the upper supply pipe to the ith region of the processing tank. also, The above control device, A setting unit that sets a setting for processing the substrate by the first chemical liquid and the second chemical liquid, The switching mechanism can be controlled according to the setting content of the setting unit. The above control device controls the switching mechanism, When the liquid medicine to be set is the first liquid medicine, Supplying the first chemical liquid to the second region of the treatment tank, And via the above rectifying member, The first chemical liquid is caused to flow from the second region to the first region in which the substrate is housed, Forming an upward flow in the vicinity of at least the substrate in the first region, The substrate is processed by the first chemical solution, on the other hand, When the liquid medicine to be set is the second liquid medicine, Supplying the second chemical liquid to the first region of the treatment tank, Or supplying the second chemical liquid to the first region and the second region of the processing tank, Agitating the liquid in the vicinity of at least the substrate in the first region, The substrate is treated by the second chemical solution. According to such a substrate processing apparatus, When a plurality of types of processing using a chemical liquid are applied to the substrate in the same processing tank, The supply method of the chemical liquid in the treatment tank is changed in each treatment. With this, The substrate can be processed by a method suitable for each treatment. the result, The uniformity of the treatment in the plane of the substrate can be improved. In addition, As a processing example of using the first chemical liquid as such a substrate processing apparatus, A treatment using a chemical solution having a significantly high reactivity with a substrate can be used. For example, an etching treatment using a wafer of a first chemical liquid composed of ammonia water is used. on the other hand, The use of the second chemical liquid as the substrate processing apparatus -40 - 200847248, A treatment liquid having a lower reactivity with the substrate than the first chemical solution may be used. For example, an engraving process using a crucible wafer of a second chemical liquid composed of hydrogen fluoride water is used. The "chemical liquid composed of ammonia water" as used herein means an aqueous solution containing ammonia as a main component, and an aqueous solution containing a small amount of a component or the like other than ammonia and ammonia (for example, a surfactant). same, The so-called "chemical liquid composed of hydrogen fluoride water" means an aqueous solution containing hydrogen fluoride as a main component. An aqueous solution containing a small amount of a component other than hydrogen fluoride and hydrogen fluoride (e.g., a surfactant) is also contained. In the third substrate processing apparatus of the present invention, Control device, After the substrate is processed by the above-described chemical solution, Control the above switching mechanism, And when the liquid medicine to be set is the first liquid medicine, Supplying water from the lower supply pipe to the second region, And via the above rectifying member, Flowing the water from the second region to the first region Forming an upward flow in the vicinity of at least the substrate in the first region, The first chemical liquid in the treatment tank is replaced with the water, on the other hand, When the liquid medicine to be set is the second liquid medicine, Supplying water from the upper supply pipe to the first region, Or supplying water from the upper supply pipe to the first region, And supplying water from the lower supply pipe to the second region, And agitating the liquid in the vicinity of at least the substrate in the first region, The second chemical liquid in the treatment tank is replaced with the water. According to such a substrate processing apparatus, When the first chemical liquid is accumulated in the treatment tank, The upflow in the treatment tank can be formed by uniformity, The flow of the liquid near the plate surface of the substrate is substantially uniform within the plate surface. One side -41 - 200847248 Replace the first chemical solution in the treatment tank with water. With this, Further, the uniformity of the treatment using the first chemical liquid in the surface of the substrate can be improved. and, When the second chemical liquid is accumulated in the treatment tank, Because the liquid is stirred near the substrate, Therefore, the concentration of the second chemical liquid in the vicinity of the plate surface of the substrate can be substantially uniformly maintained in the surface of the board. The second chemical solution in the treatment tank is replaced with water in a short time. In particular, when water is supplied not only in the first area but also in the second area, The deposits removed from the substrate can be promoted to float above the processing tank. By this, It can prevent floating matter from adhering to the substrate. also, In the third substrate processing apparatus of the present invention, The above control device can control the above switching mechanism, When the chemical liquid set as described above is the first chemical liquid, When the substrate is processed by the first chemical solution, The first chemical liquid is supplied to the second region in which the processing liquid is stored in the first region and the processing chamber of the substrate is accommodated in the first region, And via the above rectifying member, The first chemical liquid is caused to flow from the second region to the first region. Forming an upward flow in the vicinity of at least the substrate in the first region, The treatment liquid in the treatment tank is replaced by the first chemical liquid, When the treatment liquid in the treatment tank is replaced by the first chemical liquid, The supply amount per unit time of the first chemical liquid supplied to the processing tank, And when the first chemical liquid in the treatment tank is replaced with the water, The supply amount per unit time of the water supplied to the treatment tank is substantially the same. According to such a substrate processing apparatus, It can improve the uniformity of the processing in the wafer surface, In particular, the uniformity of the processing in the plate surface of the substrate in the direction of the vertical direction when the substrate is placed in the groove of -42 - 200847248 is processed. The above treatment liquid is preferably water. also, In the third substrate processing apparatus of the present invention, The rectifying member has a rectifying plate that forms a plurality of through holes. The liquid supplied to the second region can pass through the through hole of the rectifying plate. The first region is flowed into the second region from the second region. According to such a substrate processing apparatus, By means of a simple rectifying member, An upward flow having uniformity in the horizontal direction is formed in the first region of the treatment tank. The liquid is allowed to flow into the first region of the treatment tank. also, A third substrate processing apparatus of the present invention, More: In a way that the positions along the vertical direction are different from each other, a plurality of discharge members provided in the first region of the processing tank, The upper supply pipe is coupled to the discharge member, The liquid is discharged into the first region of the treatment tank through the discharge member. also, A third substrate processing apparatus of the present invention, More: Inputting an input unit for processing information on the substrate by using the first chemical liquid and the second chemical liquid, The setting unit is based on information input in the input unit. The substrate is treated by the first chemical liquid and the second chemical liquid. According to such a substrate processing method, For example, the operator or the like can input the setting of which of the first chemical liquid or the second chemical liquid to be processed by the outside. -43- 200847248 Also, In the third substrate processing method of the present invention, in at least one of the above-mentioned works, The super-chopper can be caused to occur in the liquid in the treatment tank. According to such a substrate processing apparatus, for example, an operator or the like can input the setting of the setting unit from the outside. also, A third substrate processing apparatus of the present invention, Can be more: A supersonic wave generating device for generating a supersonic wave in the processing tank. According to such a substrate processing apparatus, the adhering matter adhering to the board surface of the substrate can be removed with a high removal rate. The third program of the present invention, a program executed by a control device that controls the substrate processing apparatus, The substrate processing apparatus is provided with: a first region including the receiving substrate, and a second region disposed below the first region, And a rectifying member provided between the first region and the second region in the processing tank, Its characteristics are: Executed by the above control device, The following substrate processing method is applied to the substrate processing apparatus, The processing method of the substrate has: Setting a project for processing the substrate by any of the first chemical liquid and the second chemical liquid; And processing the substrate by the chemical liquid set as described above, In the process of processing the substrate by the chemical liquid set as described above, when the chemical liquid to be set is the first chemical liquid, Supplying the first chemical liquid to the second region of the processing tank, And via the above rectifying member, -44- 200847248, flowing the first chemical liquid from the second region to the first region in which the substrate is housed, Forming an upward flow in the vicinity of at least the substrate in the first region, Processing the substrate by the first chemical solution, on the other hand, When the liquid medicine to be set is the above second liquid medicine, Supplying the second chemical liquid to the first region of the treatment tank, Or supplying the second chemical liquid to the first region and the second region of the processing tank, Agitating the liquid in the vicinity of at least the substrate in the first region, The substrate is processed by the second chemical solution. The third recording medium of the present invention, Recording a recording medium recorded by a control device that controls the substrate processing apparatus, The substrate processing apparatus has: a processing region including a first region in which the substrate is housed and a second region disposed under the i-th region; And a rectifying member provided between the first region and the second region in the processing tank, Its characteristics are: Executed by the above control device, The following substrate processing method is applied to the substrate processing apparatus, The processing method of the substrate has: Setting a project for processing the substrate by any of the first chemical liquid and the second chemical liquid; And processing the substrate by the chemical liquid set as described above, In the process of processing the substrate by the chemical liquid set as described above, when the chemical liquid to be set is the first chemical liquid, Supplying the first chemical liquid to the second region of the processing tank, And via the above rectifying member, -45-200847248, flowing the first chemical liquid from the second region to the first region in which the substrate is housed, Forming an upward flow in the vicinity of at least the substrate in the first region, Processing the substrate by the first chemical solution, on the other hand, When the liquid medicine to be set is the above second liquid medicine, Supplying the second chemical liquid to the first region of the treatment tank, Or supplying the second chemical liquid to the first region and the second region of the processing tank, Agitating the liquid in the vicinity of at least the substrate in the first region, The substrate is processed by the second chemical solution. [Embodiment] Hereinafter, Several embodiments of the invention are described with reference to the drawings. In addition, In the embodiment described below, an example in which the present invention is applied to an etching process of a germanium wafer (semiconductor wafer) and a subsequent washing process will be described. but, The present invention is not limited to the etching process and the subsequent washing process. It can also be widely applied to the processing of substrates. [First Embodiment] First, A substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to Figs. 1 to 8 . Substrate processing program, And the first embodiment of the program recording medium. 1 to 8 are diagrams for explaining a substrate processing apparatus, Substrate processing method, Substrate processing program, And program recording media! A diagram of an embodiment. 1 is a schematic diagram of a substrate processing apparatus. Figure 2 is a cross-sectional view taken along line II-II of Figure 1, 3 to 8 are views for explaining a substrate processing method performed by using the substrate processing apparatus shown in Fig. 1 -46-200847248. As shown in Figure 1, The substrate processing apparatus 1 of the present embodiment has: The processing tank for accommodating the wafer w 2 And a liquid supply device 40 that supplies the treatment in the treatment tank 12, And a holding member (also referred to as a wafer boat) that holds the processed wafer (substrate to be processed) 20, And a control device 18 for controlling each component. As shown in Figure 1, An integral member 28 is provided in the treatment tank 12 By the rectifying member 28 The inside of the processing tank 1 2 will be divided into: The first region 12a located on the upper side of the flow regulating member 28, And a second region 1 2b located on the lower side of the flow member 28. In the substrate processing apparatus 1 〇, a plurality of kinds of processing liquids are sequentially supplied from the liquid supply device 40 to the processing tank 1 2 . A device for performing various processes on the wafer W housed in the groove 12. Especially in this embodiment, As shown in Figure 1, The substrate processing apparatus 1 further includes an ultrasonic generating device 30 that can generate superimposed waves of the processing liquid accumulated in the processing tank 12. therefore, According to the substrate processing apparatus 1 of the present embodiment, Do not ultrasonically clean the wafer W contained in the processing tank 12. the following, More details of each component of the substrate processing apparatus will be described. First of all, The liquid supply device 40 is described in detail. As shown in Figure i, The liquid supply device 40 has: Connected to the second region 12b of the treatment tank 12, the lower supply pipe 4 1 , And the first to third upper supply pipes 42 connected to the first region 丨2a of the processing tank 12, 43, 44. And the upper supply pipe 42 of the lower supply pipe 41, 43, 44 connected pure water supply pipe 48. The pure water supply pipe 48 is connected to the pure water source 64. and, In the pure preparation liquid W, the flow is divided into the power supply and the water is supplied to the supply pipe 48. The discharge pipe 65 is disposed in the supply pipe 48. By actuating the discharge mechanism 65, The treatment liquid can be supplied from the pure water supply pipe 48 to the lower supply pipe 4 1 and the upper supply pipe 42. 43, 44. also, As shown in Figure 1, a lower supply pipe 4 1 and an upper supply pipe 42 43, 44 and the pure water supply pipe 48 are connected via the switching mechanism 50. By operating the switching mechanism 50, The treatment liquid from the pure water supply pipe 48 can be sent only to the lower supply pipe 4 1 and the upper supply pipe 42 . 43, The supply tube of 44 is expected. In addition, The so-called "treatment liquid" is a liquid used for treatment. Not limited to pure water (DIW), It also contains liquid medicine. among them, First, the pure water source 64 and the discharge mechanism 65 will be described in detail. The pure water source 64 is, for example, a tank for storing the treatment liquid, or the like. It is composed of a known accumulation device that stores pure water (DIW). on the other hand, The discharge mechanism 6 5 is, for example, a pump or the like. A well-known device or machine is constructed. For a more specific spitting agency, 6 5 For example, a gas-driven bellows pump that adjusts the discharge pressure by adjusting the gas pressure can be used. As above, The liquid supply device 40 is connected to the control device 18. Then, The spouting mechanism 65 can be controlled by the control device 18. in particular, Driving and stopping of the discharge mechanism 65, The supply flow rate of the treatment liquid at the time of driving the discharge mechanism 65, It can be controlled by the control device 18. In addition, When the discharge mechanism 65 is a gas-driven bellows pump, the gas pressure is controlled. When the discharge mechanism 65 is other than the gas-driven bellows pump, for example, the amount of electric power input is controlled, Thereby, the discharge amount of the pump when the discharge mechanism 65 is driven can be adjusted. Secondly, Details about the switching mechanism 50. As shown in Figure 1, In the form of this real -48- 200847248, The switching mechanism 50 has the i-th to sixth on-off valves 5丨, 52, 53 , 54 55, 56 ° where the first opening/closing valve 51 is connected to the lower supply pipe 4 . also, The second on-off valve 52 is coupled to the first upper supply pipe 42. also, The third opening and closing valve 53 is coupled to the second upper supply pipe 43. also, The fourth on-off valve 5 4 is coupled to the third upper supply pipe 44. and, The first to fourth opening and closing valves 5 1 to 5 4 can open and close the connection state (communication state) between the pure water supply pipe 48 and the supply pipes 4 1 to 4 4 connected to the respective valves 5 i to 5 4 . that is, By opening and closing the opening and closing valves 5 1 to 5 4, The supply of the treatment liquid into the treatment tank 12 can be controlled via the supply pipes 4 i to 44. In this embodiment, The liquid supply device 40 is a source of the chemical liquid element 61 having a plurality of chemical liquid elements that are accumulated differently. 6 2 is mixed with the liquid chemical element source 6 1 in the liquid supply device 40 62 supplies of liquid medicine, And pure water supplied from pure water source 64, It is possible to generate a chemical solution (treatment liquid) of a desired concentration. In the illustrated example there is: A high concentration of ammonia water (N Η 4 Ο Η ) is stored as a source of the first chemical liquid element of the chemical liquid element. And a second source of chemical liquid 62 in which a high concentration of hydrogen fluoride (HF)-containing hydrogen fluoride water is used as a chemical liquid element. As shown in Figure 1, The fifth opening/closing valve 55 of the switching mechanism 50 is connected to the first chemical liquid element source 61. The sixth opening/closing valve 56 is connected to the second chemical liquid source 62. therefore, By opening the fifth on-off valve 5 5, The high-concentration ammonia water sent from the first chemical liquid element source 61 can be mixed into the pure water sent from the pure water supply pipe 48. Aqueous ammonia (first chemical liquid) having a desired concentration is generated as a treatment liquid. also, By opening the sixth on-off valve 56, The high-concentration hydrogen fluoride water sent from the source 2 solution -49- 200847248 element source 62 can be mixed into the pure water supply. Pure water sent, A hydrogen fluoride water (second chemical liquid) treatment liquid having a desired concentration is generated. The switching mechanism 50 is connected to the control device 18. The opening and closing operations and opening degrees of the first to fifth closing valves 5 1 to 56 are controlled by the control device 18. With this, Pure water or a concentrated chemical solution can be supplied to the treatment tank 1 2 at a desired flow rate via the respective supply pipes 4 1 to 44. In addition, The configuration of the switching mechanism 50 is only a single example, and a known device or machine that supplies a desired concentration to the processing tank 1 2 via the desired supply tubes 4 1 to 44 can be used as the switching mechanism 5 . 0. Secondly, The lower supply pipe 41 and the first to third upper supply pipes 42 will be described in detail. 43, 44. As shown in Figure 1, In this embodiment, The apparatus 40 further includes first to fourth discharge members 71 that are attached to the processing tank 12 and the processing liquid in the processing tank 1 2, 72, 73, 74. and, The ends of the feed pipes 4 1 to 44 are connected to the first to fourth discharge members 71 to 74 which are discharged to the inside of the processing tank 1 2 . As shown in Figure 1, Each of the ejection members 71, 72, 73, 74 is mounted in the treatment tank 12 at four vertical positions. The first nozzle 71 is disposed in the second region 12b of the processing tank 12, It is connected to the lower feed pipe 41. The second discharge member 72 is disposed at the lowest position in the first region 12a of the treatment tank. Connected to the first upper supply pipe 42 again, The third discharge member 73 is placed in the vertical direction of the first region 12a of the treatment tank 12 in the vertical direction. f 48 is the sub-controller. The liquid supply side of the liquid supply device, etc., is different from each of the supply liquids. The internal fitting is connected to the upper supply pipe 43 of the -50-200847248 2 . also, The fourth discharge member 74 is disposed in the vertical direction of the second discharge member 723 and the third discharge member 713 in the first region 12a of the treatment tank 12, and is placed in the vertical direction. It is connected to the third upper supply pipe 44. In addition, As shown in Figure 1, The treatment liquid discharged from the second discharge member 7.2, Mainly, it can be supplied to the periphery of the lower region of the wafer W disposed in the first region 丨2a of the processing tank 12. also, As shown in Figure 1, The treatment liquid discharged from the third discharge member 73, Mainly, it can be supplied to the periphery of the central region of the wafer W disposed in the first region 1 2 a of the processing tank 1 2 . also, As shown in Figure 1, The treatment liquid discharged from the fourth discharge member 724, Mainly, it is supplied to the periphery of the upper region of the wafer W disposed in the first region 1 2a of the processing tank 12. In Fig. 2, the fourth discharge member 704 is illustrated based on the cross section of the treatment tank 12. In addition, In this embodiment, First to fourth discharge members 7 1 , 72, 73, 74 is only in the vertical direction, the configuration position is different. The fourth discharge member 74 shown in Fig. 2 is the first to third discharge members 71, 72, 73 the same composition. As shown in Figure 1 and Figure 2, In this case, Each of the ejection members 71, 72, 73, 74 is constituted by a pair of nozzles provided on the opposite side walls of the treatment tank 12. The nozzle is an elongated tubular member that extends in the horizontal direction along the wall surface of the treatment tank 12. As each ejection member 71, 72, 73, The two tubular members 74 are disposed at the same position in the vertical direction (see Fig. 1). Become the ejection member 71, 72, 73, One end of the cylindrical member of 74 is blocked, The other end is the corresponding supply pipe 4 1, -51 - 200847248 4 2, 4 3, 4 4 links. as shown in picture 2, Each of the tubular members is provided with a plurality of discharge ports 7 1 a arranged at a constant interval along the longitudinal direction thereof, 72a, 73a, 74a. Spit out 71a, 72a, 73a, The configuration position of 74a is as described later. It is determined based on the arrangement position of the wafer w to be processed held by the holding member 20 . In addition, From each of the ejection members 71, 72, 73, The discharge direction of 74 is preferably changed as appropriate. but, Such a discharge member 71, 72, 73, The composition of 74 is just an example. A known member or the like can be used. also, The spitting member can also be omitted. Each of the supply pipes 4 1 to 44 is directly connected to the treatment tank. As shown in Figure 1, An adjustment device 6 7 for adjusting various conditions of the treatment liquid flowing in the pure water supply pipe 48 may be interposed in the pure water supply pipe 48. a gas concentration adjusting device capable of adjusting a dissolved gas concentration of the treatment liquid, Or a bubble amount adjusting device that adjusts the amount of bubbles contained in the treatment liquid, Or a temperature adjustment device that adjusts the temperature of the treatment liquid, etc. As such an adjustment device 6 7 〇 second, The treatment tank 1 2 for receiving the treatment liquid from the liquid supply device 40 as described above will be described in detail. The treatment tank 12 is a contour having a large square cube as shown in Figs. 1 and 2 . The processing tank 12 is formed with an upper opening 1 2c through which the wafer W is taken in and out as will be described later. and, At the bottom of the treatment tank 12, there is provided an discharge pipe 13 for opening and closing to discharge the accumulated treatment liquid. also, As shown in Figure 1, The outer groove 15 is provided so as to surround the upper opening 1 2c of the treatment tank 12. Further, the tank 15 is a treatment liquid which can be recovered and overflowed from the upper opening 12c of the treatment tank 1 2 . and, Similarly to the treatment tank 12, -52-200847248' is also provided with an discharge pipe 16 for opening and closing the discharge of the recovered treatment liquid in the outer tank 15. Such a treatment tank 1 2 and an outer tank 丨 5 are formed, for example, using quartz or the like which is rich in chemical resistance. and, The thickness of the bottom portion of the treatment tank 12 is such that the type of material forming the treatment tank 12 and the ultrasonic wave irradiated from the ultrasonic generation device 30 are measured in such a manner that ultrasonic waves from the super-wave generating device 3 往 described later can be transmitted. The frequency and so on are determined. Further, the discharge pipe 13 of the self-treatment tank 1 2 and the outer tank 15 is 1 6 discharged treatment fluid, Can be discarded as it is, It is again supplied to the treatment tank 1 2 via a filter or the like. When the treatment liquid recovered in the outer tank 15 is reused, For example, as shown by the dotted line in Fig. 1, it is only necessary to provide a circulation pipe 16a connected to the outer tank 丨5 and the pure water source 64. Secondly, The rectifying member 28 disposed in the processing tank 12 is described in detail. The flow regulating member 28 adjusts the flow of the treatment liquid flowing from the second region 1 2b of the treatment tank 12 to the first region 12a. A member for forming an upward flow in the first region 12a in the processing tank 12. In addition, The term "upstream" as used herein means the flow from the lower side to the upper side. It is not limited to the flow direction parallel to the vertical direction. As shown in Figure 1 and Figure 2, In this embodiment, The flow regulating member 28 is composed of a rectifying plate having a plurality of through holes 29. The rectifying plate 28 is supported such that its plate surface can be formed parallel to the horizontal plane. as shown in picture 2, A circular through hole 29 is formed substantially in the entire surface of the rectifying plate 28 including the region directly under the wafer W accommodated in the first region 1 2a of the processing tank 12. -53- 200847248 Also, In this case, The through holes 29 are regularly arranged on the rectifying plate 28. Therefore, if such a rectifying plate 2 8 is utilized Then, an upward flow of each position of the virtual horizontal plane in the first region 1 2a of the processing tank 12 in the straight direction can be formed in the first region 1 2 a of the processing tank 1 2 at a flow rate of a maximum of ***. . that is, The upward flow in the vertical direction in which the speed unevenness in the horizontal direction position is lowered is formed in the entire area of the first region 1 2 a of the treatment tank 12. The rectifying plate 28 is formed of the same material as the processing tank 12. and, The thickness of the rectifying plate 28 is the same as the thickness of the bottom of the processing tank 12 described above. In a manner capable of transmitting ultrasonic waves from the ultrasonic wave generating device 30, The material type of the rectifying plate 28 and the frequency of the ultrasonic wave irradiated from the ultrasonic generating device 3 are determined. In addition, The rectifying member 28 thus constructed is merely an example. Various known rectifying members can be used. Next, the holding member 20 for holding the wafer W will be described. As shown in Figure 1 and Figure 2, The holding member 20 has: 4 rod-shaped members 2 along the horizontal direction of the big raft 2 And the base portion 24 of the four rod-shaped members 2 2 is supported unilaterally by one side. The rod member 22 can support a plurality of wafers W to be processed at a time, For example, a 150 wafer w. therefore, Each of the rod-shaped members 22 is formed with a groove (not shown) which is arranged at a constant interval along the longitudinal direction thereof. The wafer W is engaged with the groove, The surface of each wafer w is orthogonal to the direction in which the rod members extend. That is, the surface of each wafer W will be in the vertical direction. It is held by the holding member 20 (refer to FIG. 1). As can be understood from Figure 2, The arrangement pitch of the discharge ports 71a - 54 - 200847248 - 74a of the discharge members 71 to 74 is substantially the same as the arrangement pitch of the wafer W held by the holding member 20. In particular, the processing liquid is directly supplied to the second to fourth discharge members 72 of the first region 12a of the treatment tank 12, 73, 74 spouts 72a, 73a, 74a is arranged in such a manner that the processing liquid can be discharged between the adjacent wafers W (the arrow direction in Fig. 2) held by the holding member 20. on the other hand, The base portion 24 of the holding member 20 is coupled to a lifting mechanism (not shown). The lifting mechanism is used to lower the holding member 20 holding the wafer W, Thereby, the crystal can be accommodated in the first region 1 2a of the treatment tank 12
圓W，且亦可在處理槽1 2所積蓄的處理液中浸漬晶圓W 〇 另外，昇降機構是被連接至控制裝置1 8。往處理槽 1 2的第1區域12 a內之晶圓W的收容、及來自處理槽12 的第1區域1 2a之晶圓W的排出可藉由控制裝置1 8來控 制。 其次，說明有關超音波發生裝置3 0。如圖1所示， 超音波發生裝置3 0是具有：安裝於處理槽1 2的底部外面 之振動子3 8、及用以驅動振動子3 8之高頻驅動電源3 2、 及連接至高頻驅動電源3 2之超音波振盪器3 4。在本實施 形態中是設有複數的振動子3 8，各振動子3 8是以能夠部 份地佔據處理槽1 2的底部外面之方式配列。又，如圖1 所示，超音波發生裝置30更具有連接至超音波振盪器34 及各振動子3 8的驅動切換機構3 6。藉由此驅動切換機構 3 6，可全體驅動複數的振動子3 8，及個別驅動一個或二 -55- 200847248 個以上的振動子3 8。 一旦振動子3 8被驅動而振動，則超音波會經由處理 槽1 2的底部及整流構件2 8傳播至處理槽1 2的第1區域 1 2a內所被積蓄的處理液。藉此，使超音波發生於處理槽 1 2內的處理液。另外，超音波發生裝置3 0是被連接至控 制裝置1 8，藉由控制裝置1 8來控制往處理液之超音波的 賦予。 其次，說明有關控制裝置1 8。如上述，控制裝置18 是被連接至基板處理裝置1 0的各構成要素，可控制各構 成要素的動作。在本實施形態中，控制裝置1 8是具有： 由CPU所構成的控制器19a、及連接至該控制器19a的記 憶媒體1 9b。在記錄媒體1 9b中，用以執行後述的被處理 晶圓W的處理方法之程式會與各種的設定資料一起被儲 存。記錄媒體19b是由ROM或RAM等的記憶體，硬碟、 CD-ROM等的碟狀言己錄媒體，及其他公知的記錄媒體所構 成。 其次，主要利用圖3〜圖8來說明有關藉由如此構成 的基板處理裝置1 0來進行的晶圓W的處理方法。 首先，第1工程，如圖3所示，在處理槽12內積蓄 純水作爲處理液。具體而言，根據來自控制裝置1 8的信 號，驅動吐出機構6 5，被積蓄於純水源6 4的純水會在純 水供給管48內往切換機構50送入。流動於純水供給管 48內的純水是藉由調整裝置67來調整溶存氣體濃度、氣 泡的混入量、溫度等。此時，切換機構5 0的第5開閉閥 -56- 200847248 5 5及第6開閉閥5 6是根據來自控制裝置1 8的信號，被 閉鎖。因此’在從純水供給管4 8傳送而來的純水中，不 會有來自第1藥液要素源61及第2藥液要素源62的藥液 要素被混入。亦即，可對處理槽1 2內供給純水作爲處理 液。 又，此時，切換機構5 0的第1〜第4開閉閥5 1，5 2 ，5 3，5 4是根據來自控制裝置1 8的信號，全部被開放。 因此，從下側供給管41及第1〜第3上側供給管42，43 ’ 44的所有供給管供給純水至處理槽1 2內。所以，可將 每單位時間的純水供給量（例如40〜90 Ι/min)設定更多 。其結果，可短時間有效率地在處理槽1 2內積蓄純水。 其次’第2工程是在處理槽12的第1區域12a內收 容晶圓W。具體而言，根據來自控制裝置1 8的信號，昇 降機構（未圖示）會使保持構件2 0降下。此時，保持構 件2 0是保持所定片（例如5 0片）的被處理晶圓W。其結 果，複數片的晶圓W可被收容於處理槽12的第1區域 1 2 a內，且浸漬於處理槽1 2內所積蓄的純水中。 此第2工程的期間，切換機構40的開閉狀態及吐出 機構6 5的作動狀態是從上述第1工程起維持於原封不動 的狀態。因此，從下側供給管41及第1〜第3上側供給 管4 2，4 3，4 4的所有供給管持續供給純水至處理槽1 2內 ，純水會從處理槽1 2溢出至外槽1 5。 另外，亦可以相反的順序來實施該第1工程及第2工 程。又，亦可並行實施第1工程及第2工程。 -57- 200847248 其次，第3工程，如圖4所示，經由下側供給管4 1 來供給氨水（第1藥液）至處理槽12的第2區域12b， 處理槽1 2內的純水會藉由氨水來置換。具體而言，首先 ，根據來自控制信號1 8的信號’吐出機構65的輸出會降 低。並且，切換機構5 0的第5開閉閥5 5會被開放。藉此 ，可在自純水供給管4 8送來的純水中混入來自第1藥液 要素源61的高濃度氨水。又，第2〜第4開閉閥72，73 ，74會閉鎖。其結果，如圖4所示’被弄薄成所定濃度 的氨水（藥液）會作爲處理液，經由下供供給管41，以 所定流量（例如、40〜50 Ι/min)供給至處理槽12的第2 區域1 2 b。 如上述，下側供給管41是被連結至一對的第1吐出 構件7 1。從下側供給管4 1送入的藥液是經由該第1吐出 構件71吐出至處理槽1 2的第2區域12 b。在本實施形態 中，一對的第1吐出構件7 1是在對向的處理槽1 2的一對 壁面’以能夠對向的方式對稱性地配置。又，如圖4所示 ’各第1吐出構件71是往斜下方吐出藥液，從不同的吐 出構件7 1吐出的藥液是在第2區域1 2b內形成對稱流。 因此，從一方的第1吐出構件71吐出的藥液、及從 另一方的第1吐出構件71吐出的藥液會在第2區域12b 的中央部互相衝突，來自第1吐出構件7 1之沿著吐出方 向的液流會被打消。如此一來，沿著第2區域1 2 b內的特 定方向之局處的藥液流動會藉由處理槽1 2的壁面及整流 板28而打消，且弟2區域12b內的壓力可大致均一地上 -58- 200847248 昇。其結果，大致同一量的藥液會分別通過整流板2 8的 多數個貫通孔29’從第2區域12b住弟1區域12a沿著 鉛直方向流入。亦即，從第2區域12b往第1區域12a內 之藥液的流入可在整流板2 8上的大致全區域大致均一地 進行。 如以上那樣，在處理槽12的第1區域12 a內形成上 昇流（並進流），處理槽1 2內的純水會從處理槽1 2的下 側藉由藥液來置換而去。又，如圖4所示’隨著藥液之往 處理槽1 2內的供給，至目前爲止積蓄於處理槽1 2的處理 液會僅與往處理槽1 2之藥液的流入量大致同一量，從處 理槽1 2的上方開口 1 2 c排出至外槽1 5。亦即，若根據本 實施形態，則可藉由藥液（氨水）來有效率地置換處理槽 1 2內的純水，可節約置換所要的藥液量。 另外，一旦對第1區域1 2 a內的晶圓W的周圍供給 氨水，則開始氨水之晶圓W的鈾刻。如上述，若根據本 實施形態，則藥液會從整流板2 8上的大致全區域大致均 一地流入第1區域1 2 a內。因此’可確保對沿著對應於配 置在第1區域12a內的狀態下的橫方向（水平方向）的方 向之晶圓W的處理的均一性。 又，如上述般，藉由從第2區域1 2 b流入第1區域 1 2 a的氨水，在第1區域1 2 a內的液流全體會朝向上方。 因此，可使漂浮於處理槽12內的浮游物’例如可使藉由 蝕刻處理來從晶圓W除去的粒子在處理槽1 2浮起至上方 ，更流出至外槽1 5。藉此’可防止浮游物（粒子）附著 -59 - 200847248 於晶圓W。 其次’第4工程，如圖5所示，一邊將氨水（藥液） 補充至處理槽1 2，一邊將晶圓W浸漬於氨水（藥液）中 。具體而言，將切換機構5 0的開閉狀態及吐出機構6 5的 作動狀態從上述第3工程起維持於原封不動的狀態。因此 ’往處理槽1 2的第2區域1 2 b以所定流量（例如，4 0〜 5 0 Ι/min)來持續供給氨水。此工程是例如在數分鐘之間 被實施。 此工程中，在處理槽12的第1區域1 2a內形成有藥 液的上昇流。又，如圖5所示，隨著從第2區域1 2 b往第 1區域1 2 a之新的氨水的流入，至目前爲止積蓄於處理槽 1 2的氨水會僅與往處理槽1 2之新的氨水的流入量大致同 一量，從處理槽1 2的上方開口 1 2 c排出至外槽1 5。亦即 。亦即，不僅在處理槽12的第1區域12a內所配置的被 處理晶圓 W的周圍氨水的濃度會被保持於一定，且被處 理晶圓 W的板面上之氨水的流動方式，例如流速會在板 面內大致形成均一。因此，儘管應被處理的矽晶圓W對 氨水具有敏銳的反應性，還是可使該工程中的鈾刻量在被 處理晶圓W的板面內大致成爲均一。 另外，與上述第3工程同樣，藉由從第2區域12b往 第1區域1 2 a流入的氨水，在第1區域1 2 a內的液流會全 體朝向上方。 因此，可使漂浮於處理槽1 2內的浮游物在處理槽1 2 內浮起至上方，更流出至外槽1 5。藉此，可防止浮游物 -60- 200847248 (粒子）附著於晶圓W。 其次，第5工程，如圖6所示，經由下側供給管4 1 來供給水至處理槽1 2的第2區域1 2b，處理槽1 2內的氨 水會藉由純水來置換而去。具體而言，根據來自控制裝置 1 8的信號，切換機構5 0的第5開閉閥5 5會被閉鎖。藉 此，停止對自純水供給管4 8傳送而來的純水之來自第1 藥液要素源6 1的高濃度氨水的混入。另一方面，其他切 換機構50的各開閉閥的開閉狀態及吐出機構65的作動狀 態是從上述第4工程起維持於原封不動的狀態。其結果， 可以所定流量（例如，40〜50 1/min)來供給純水至處理 槽12的第2區域12b。亦即，從第3工程至第5工程爲 止，供給至處理槽1 2的第2區域1 2 b之處理液的供給量 是形成大致一定。 如上述，及圖6所示，各第1吐出構件71是往斜向 下方吐出純水’從不同的吐出構件7 1吐出的純水可在第 2區域1 2 b內形成對稱流。因此，從一方的第1吐出構件 7 1吐出的純水、與從另一方的第1吐出構件7 1吐出的純 水會在第2區域1 2b的中央部互相衝突，來自第1吐出構 件7 1之沿著吐出方向的液流會被打消。如此一來，沿著 第2區域1 2b內的特定方向之局處的純水流動會藉由處理 槽12的壁面及整流板28而打消，且第2區域12b內的壓 力可大致均一地上昇。其結果，大致同一量的純水會分別 通過整流板2 8的多數個貫通孔2 9，從第2區域1 2b往第 1區域1 2a沿著鉛直方向流入。亦即，從第2區域1 2b往 -61 - 200847248 第1區域1 2 a內之純水的流入可在整流板2 8上的大致全 區域大致均一地進行。 如以上那樣，在處理槽12的第1區域12a內形成上 昇流，處理槽12內的氨水（藥液）會從處理槽12的下側 藉由純水來置換而去。又，如圖4所示，隨著純水之往處 理槽1 2內的供給，至目前爲止積蓄於處理槽1 2的氨水會 僅與往處理槽1 2之純水的流入量大致同一量，從處理槽 1 2的上方開口 1 2c排出至外槽1 5。亦即，若根據本實施 形態，則可藉由純水來有效率地置換處理槽1 2內的藥液 (氨水）。 又，與上述第3及第4工程同樣，在此第5工程中， 亦藉由從第2區域12b流入至第1區域12a的純水，在第 1區域1 2a內的液流會全體朝向上方。因此，可使漂浮於 處理槽1 2內的浮游物在處理槽1 2內浮起至上方，更流出 至外槽1 5。藉此，可防止浮游物（粒子）附著於晶圓W 〇 另外，一旦在第1區域12 a內的晶圓w的周圍，氨 水被置換成純水，則終了利用氨水之晶圓W的蝕刻。如 上述般，若根據本實施形態，則純水會從整流板2 8上的 大致全區域大致均一地流入至第1區域1 2a內。 因此，可確保對沿著對應於配置在第1區域1 2 a內的 狀態下的橫方向（水平方向）的方向之晶圓W的處理的 均一性。 又，從利用氨水之晶圓 W的蝕刻開始到終了的期間 -62- 200847248 ，在處理槽1 2的第1區域12 a內經常形成有氨水的上昇 流。因此’可確保對沿著對應於配置在第1區域1 2a內的 狀態下的橫方向（水平方向）的方向之晶圓 W的處理的 均一性。 又，如上述，處理槽12內（特別是被處理晶圓w的 周圍）的處理液（純水）是由下側慢慢地藉由藥液（氨水 )來置換而去。同樣，如上述，處理槽1 2內（特別是被 處理晶圓 W的周圍）的藥液（氨水）是由下方慢慢地藉 由水（純水）來置換而去。因此，如圖8所示，配置於處 理槽1 2的第1區域1 2a內之晶圓W中上側部份的周圍之 藥液的濃度（圖8的虛線）與下側部份的周圍之藥液的濃 度（圖8的實線）是在往處理槽12內之藥液的供給開始 後的一定時間的期間、及往處理槽1 2內之純水的供給開 始後的一定時間的期間，形成相異的値。亦即，在晶圓W 的板面中，在晶圓W配置於處理槽1 2內時配置於上方的 部份與配置於下方的部份之間，利用藥液的處理實質開始 的時序及利用藥液的處理實質終了的時序不同。然而，可 藉由使上述第3工程之往處理槽1 2的第2區域1 2b內的 藥液的每單位時間的供給流量與第5工程之往處理槽1 2 的第2區域1 2b內的純水的每單位時間的供給流量大致形 成相同，在晶圓W的板面中之晶圓W被配置於處理槽1 2 內時配置於上方的部份與配置於下方的部份之間，使實質 進行第1藥液的處理的時間大致形成相同（參照圖8 ) 。因此，可確保沿著相當於被處理晶圓W配置於處理槽 -63- 200847248 1 2內時的上下方向的方向之被處理晶圓W的板面之處理 的均一性。 又，對被處理晶圓的進行處理的第3工程〜第5工程 中，在被處理晶圓W的板面周圍，形成均一的藥液的上 昇流。亦即，被處理晶圓W的板面上之氨水的流動，例 如流速會在板面內大致形成均一。因此，即使所應被處理 的砂晶圓W對氨水具有敏銳的反應性，照樣可使鈾刻量 在被處理晶圓W的板面內大致形成均一。 如此一來，在第3工程〜第5工程之間，可使晶圓W 在其板面的全區域以大槪均一的鈾刻量來飩刻。 其次，第6工程，如圖7所示，經由下側供給管41 以及第1〜第3上側供給管42，43，44來對處理槽12供 給純水。具體而言，首先，根據來自控制信號丨8的信號 ，吐出機構65的輸出會上昇。並且，切換機構50的第2 〜第4開閉閥52，53，54會被開放。其結果，如圖7所 示，純水會經由下位供給管4 1及第1〜第3上側供給管 42，43，44以所定流量（例如，80 Ι/min以上）來供給至 處理槽1 2。 如上述，第1〜第3上側供給管42，43，44是分別 連結至一對的第2〜第4吐出構件72，73，74。從第1〜 第3上側供給管42，43，44送入的純水是經由該第2〜 第4吐出構件72，73，74，直接吐出至處理槽12的第1 區域12a內。在本實施形態中，各對的吐出構件72，73 ，74是以能夠在所對向的處理槽1 2的一對壁面成對向之 -64 - 200847248 方式對稱配置。又，第2〜第4吐出構件72，73，74的 各吐出口 72a，73，74a是以能夠在被保持於保持構件2〇 的相隣晶圓W之間吐出純水的方式配列。 因此，從對向的各對的吐出構件72，73，74的其中 一方的吐出構件吐出的純水與從他方的吐出構件吐出的純 水會在晶圓W與晶圓W之間的間隙衝突。並且，第2〜 第4吐出構件72，73，74是配置於相異的鉛直方向位置 。因此，在處理槽12的第1區域12a內（至少被處理晶 圓W的板面的周圍），積蓄於處理槽12內的液體（純水 )會被激烈攪拌。此外，相較於第3〜第5工程，本工程 中往處理槽1 2內之液體的處理液的每單位時間的供給量 會増大。該等的結果，亦可從晶圓 W的周圍確實地沖走 在第5工程未完全除去滯留於晶圓W周圍的離子水準的 藥液。又，同樣，可從該晶圓W除去在第5工程未完全 除去附著於晶圓W的附著物（粒子）。 另外，本工程中，對於藉由保持構件20來從下方予 以支持的晶圓W而言，並非僅由下方，亦從兩側方吐出 處理液（純水）。因此，與第3〜第5工程作比較，即使 每單位時間之處理液的供給量増大，照樣可藉由保持構件 2 〇來安定支持晶圓W。 又，本實施形態中，在處理槽1 2的第2區域1 2b內 也會有純水從下側供給管4 1被供給。被供給至第2區域 12b的純水，如上述，通過整流板28，在整流板28的全 面成爲大致均一的上昇流（並進流），流入至第1區域 -65- 200847248 12a。然後，藉由從該第2區域12b流入至第1逗 的純水，在第1區域1 2a內的液流全體會形成朝向 因此，可使殘留於晶圓W周圍的藥液或從晶圓W 附著物在處理槽1 2內浮起至上方，更往外槽1 5流 此，可更確實地進行晶圓 W的洗滌處理的同時， 所被除去的附著物再度附著於晶圓W。 如此的第6工程是例如進行數分鐘。一旦第6 了，則保持構件20構件會上昇，晶圓W會從處天 內排出。完成以上那樣對被處理晶圓W的一連串處 若根據以上那樣的本實施形態，則可在第1區 內形成上昇流，收容被處理晶圓W的同時對積蓄 (純水）的處理槽12內的第2區域12b供給藥液 )。並且，在處理槽12內藉由藥液置換後，在第 12a內形成上昇流，而將純水供給至處理槽12的） 域1 2b。無論哪個情況皆是至少在被處理晶圓W的 成大槪均一的上昇流。因此，可確保沿著相當於被 圓W配置於處理槽1 2內時的橫方向的方向之被處 W的板面之處理的均一性。 並且，在被處理晶圓W的附近，處理槽12內 液是由下側慢慢地藉由藥液來置換而去。同樣，在 晶圓W的附近，處理槽1 2內的藥液是由下方慢慢 水來置換而去。因此，在被處理晶圓W的板面中 處理晶圓W配置於處理槽1 2內時配置於上方的部 置於下方的部份之間，雖利用藥液的處理實質開始 域12a 上方。 除去的 出。藉 可防止 工程終 i槽12 理。 域12a 處理液 (氨水 1區域 _ 2區 周圍形 處理晶 理晶圓 的處理 被處理 地藉由 ，在被 份與配 的時序 -66- 200847248 及利用藥液的處理實質終了的時序不同，但可使實質進行 藥液的處理的時間大致形成相同。因此，可確保沿著相當 於被處理晶圓W配置於處理槽1 2內時的上下方向的方向 之被處理晶圓W的板面之處理的均一性。 又，至少在處理槽12的第1區域丨2a內所配置的被 處理晶圓W的周圍，形成藥液的上昇流。因此，不僅藥 液的t辰度會被保持於一疋’且被處理晶圓W的板面上之 藥液的流動，例如流速也會在板面內大致形成均一。所以 ’可不依所被使用的藥液種類，確保被處理晶圓W的板 面之處理的均一性。 藉此，若根據本實施形態，則可不依所被使用的藥液 種類，一面確保被處理保晶圓W的板面內之處理程度的 均一性，一面處理。 另外，可對上述實施形態加諸各種的變更。例如，在 上述的實施形態中，以藥液（氨水）來置換積蓄於處理槽 1 2內的處理液（純水）時，只從下側供給管4 1供給藥液 至處理槽1 2內，以純水來置換積蓄於處理槽1 2內的藥液 (氨水）時，只從下側供給管4 1供給純水至處理槽1 2內 ，但並非限於此例。亦可從下側供給管4 1供給藥液或純 水至處理槽1 2內的同時，並行從第1〜第3上側供給管 42，43，44的其中至少任何一個的供給管供給藥液或純 水至處理槽1 2內。有關第1區域1 2a內之液體的流動， 只要被上昇流支配，或至少在第1區域1 2a內所收容的晶 圓W的周圍形成上昇流，便可使晶圓W在其板面內大致 -67- 200847248 均一地處理。 又，上述實施形態中，在第6工程中從全部的供給管 41，42，43，44供給處理液（純水）至處理槽12內，但 並非限於此例。 例如，亦可停止來自下側供給管4 1之純水的供給。 又，亦可從第1〜第3上側供給管41，42，43的其中一 個或二個供給純水。至少在第1區域1 2a內所被收容的晶 圓W周圍吐出處理液，且所被積蓄的液體在晶圓W的周 圍被攪拌，則可更確實地進行對該晶圓W的洗滌處理。 並且，可從晶圓W以高除去效率來除去附著物。 又，上述實施形態中，藥液爲使用氨水，但並非限於 此例，亦可使用各種的液體作爲藥液。如上述般，可不依 藥液的種類，使被處理晶圓W在其板面內大致均一地處 理。 又，上述實施形態中，基板處理裝置1 〇是包含超音 波發生裝置3 0，但並非限於此例，超音波發生裝置3 0爲 任意。另一方面，在上述基板處理方法中的各工程、例如 上述第3工程（利用藥液之處理液的置換）、第4工程（ 晶圓W浸漬至藥液）及第5工程（利用純水之藥液的置 換）中，亦可使超音波從超音波發生裝置3 0發生於處理 槽1 2內的處理液。若根據如此的方法，則可從被處理晶 圓W以局除去效率來除去粒子。 又，上述實施形態中，整流構件28是由具有多數個 貫通孔2 9的整流板所構成，但並非限於此例，亦可適用 -68- 200847248 各種公知的整流構件。並且，爲了在處理槽1 2的第1區 域12a內所配置的被處理晶圓W的周圍形成均一的上昇 流，亦可在處理槽12的第2區域1 2b內設置補助整流板 。例如，以能夠和經由下側供給管41之往第2區域12b 內的液體的供給口（在上述實施形態中是第1吐出構件 7 1的吐出口 7 1 a )對向之方式來設置板狀的補助整流板， 藉此可打消沿著經由下側供給管41來供給的液體的供給 方向之局處的流動。而且，從下側供給管41經由第1吐 出構件7 1來使處理液流入處理槽1 2的第2區域1 2b內， 但並非限於此，亦可省略第1吐出構件7 1。 又，上述實施形態中，從沿著鉛直方向之相異的三個 位置供給處理液至處理槽1 2的第1區域1 2 a內，但並非 限於此例。亦可只從沿著上下方向之一個或二個的位置供 給處理液至第1區域1 2 a內。或，從沿著上下方向之四個 以上的位置供給處理液至第1區域1 2a內。 又，以上的說明中，是將基板處理裝置及基板處理方 法適用於對晶圓W之蝕刻處理及洗滌處理，但並非限於 此例，亦可適用於對LCD基板或CD基板的蝕刻處理及洗 滌處理，更可適用於蝕刻處理及洗滌處理以外的各種處理 [第2實施形態] 其次，主要參照圖9〜圖1 2來說明本發明的基板處 理裝置及基板處理方法、基板處理程式、及程式記錄媒體 -69- 200847248 的第2實施形態。 在第2實施形態中是說明對處理基板 內連續地實施使用藥液的複數種類的處理 以下的第2實施形態中是使用第1實施形 板處理裝置1 0，對作爲被處理基板的晶 基板的反應性相異之二種類的藥液（第1 )的二種類的處理。然後，如以下說明那 理中使用與晶圓的反應性更高的第1藥液 參照圖1〜圖8 —邊作爲第1實施形態說 來處理晶圓的方法大致相同。因此，在以 關第2實施形態中與上述第1實施形態相 複說明。 以下，主要參照圖9〜圖12的同時 實施形態中所參照的圖1〜圖8來說明有 。在此，圖9〜圖1 2是用以說明基板處 理方法、基板處理程式、及程式記錄媒體 。其中，圖9是用以說明基板處理方法& 1 2是用以說明圖9所示的各工程的處理內 在第2實施形態中是使用在第〗實施 基板處理裝置1 0 (參照圖1及圖2)。因 ’基板處理裝置1 0的液供給設備4 0是具 氨水（NH4OH )作爲藥液要素而積蓄的澤 6 1、及以高濃度含氟化氫（H F )的氟化: 素而積蓄的第2藥液要素源62。如圖i :在單一的處理槽 之例。特別是在 態中已說明的基 圓施以和被處理 藥液及第2藥液 樣，二種類的處 之處理是與一邊 明過之藉由氨水 下的說明中，有 同的部份省略重 ，適當參照第1 關第2實施形態 理裝置、基板處 的第2實施形態 5表，圖 10〜圖 容。 形態已說明過的 此，如圖1所示 有：以高濃度的 〖1藥液要素源 氫水作爲藥液要 所示，切換粒構 -70- 200847248 50的第5開閉閥55是與第1藥液要素源61連結，第6 開閉閥56是與第2藥液要素源62連結。然後，可藉由開 啓第5開閉閥5 5，使從第1藥液要素源61送進來的高濃 度氨水混入至從純水供給管48送入的純水，生成所望濃 度的氨水（第1藥液）作爲處理液。又，可藉由開啓第6 開閉閥5 6，使從第2藥液要素源6 2送進來的高濃度氟化 氫水混入至從純水供給管4 8送入的純水，生成所望濃度 的氟化氫水（第2藥液）作爲處理液。 其次，主要利用圖9〜圖12來說明有關第2實施形 態之晶圓W的處理方法。在此，在圖9的上側供給管的 欄中顯示在各工程中從上側供給管42，43，44供給的液 體。並且，在圖9的下側供給管的欄中顯示在各工程中從 下側供給管4 1供給的液體。而且，在圖9的外槽的欄中 顯示在各工程中從處理槽1 2溢出至外槽1 5的液體中所含 的一個。又，圖9的上側供給管、下側供給管及外槽的欄 中所示的「DIW」是表示純水，「NH3」是表示氨水，「 HF」是表示氟化氫水。 另外，以下說明的處理方法，如上述般，使用與晶圓 W的反應性高的第1藥液（氨水）之處理、及使用與晶圓 W的反應性比第1藥液（氨水）更低的第2藥液（氟化氫 水）之處理等二種類的處理會在基板處理裝置1 0的處理 槽1 2內對晶圓W實施。更具體而言，對晶圓W依序實施 使用氟化氫水（第2藥液）的蝕刻處理及其後的洗滌處理 、及使用氨水（第1藥液）的蝕刻處理及其後的洗滌處理 -71 - 200847248 及使用純水的處理、以及第二次使用氟化氫水的蝕刻處理 及其後的洗漉處理。以下，針對各工程來進行說明。 首先’如圖9所示’第1工程是在處理槽ι2內積蓄 純水作爲處理液。具體而言，與一邊參照圖3 一邊說明的 第1實施形態之基板處理方法的第1工程同樣，在處理槽 1 2內積蓄純水。亦即，根據來自控制裝置1 8的信號，驅 動吐出機構65 ’被積蓄於純水源64的純水會在純水供給 管4 8內往切換機構5 0送入。流動於純水供給管4 8內的 純水可藉由調整裝置67來調整溶存氣體濃度、氣泡的混 入量、溫度等。此時，切換機構5 〇的第5開閉閥5 5及第 6開閉閥5 6是根據來自控制裝置1 8的信號，被閉鎖。因 此’在從純水供給管4 8送進來的純水中，不會有來自第 1藥液要素源6 1及第2藥液要素源62的藥液要素混入。 亦即’在處理槽1 2內供給純水作爲處理液。 又’此時’切換機構5 0的第1〜第4開閉閥5 1，5 2 ’ 5 3 ’ 5 4是根據來自控制裝置1 8的信號，全部被開放。 因此，從下側供給管41及第1〜第3上側供給管42，4 3 ’ 4 4的全部供給管供給純水至處理槽1 2內。所以，可將 每單位時間的純水的供給量（例如，8 〇 1 /min以上）設定 更多。其結果’可短時間有效率地在處理槽1 2內積蓄純 水。 其次’第2工程是在處理槽1 2的第1區域i 2a內收 容晶圓W。具體而言，與上述第1實施形態之基板處理方 法的第2工程同樣，在處理槽12的第1區域丨2 a內收容 -72- 200847248 晶圓W。亦即，根據來自控制裝置1 8的信號，昇降機構 (未圖示）會使保持構件2 0降下。此時，保持構件2 0是 保持所定片（例如5 0片）的被處理晶圓W °此時’複數 片的晶圓W可被收容於處理槽1 2的第1區域1 2a內的同 時，可浸漬於處理槽1 2內所積蓄的純水中。 該第2工程的期間，切換機構40的開閉狀態及吐出 機構65的作動狀態是從上述第1工程起維持於原封不動 的狀態。因此，可從下側供給管41及第1〜第3上側供 給管42，43，44的全部供給管持續供給純水至處理槽1 2 內，純水會從處理槽1 2溢出至外槽1 5。 另外，亦可以相反的順序實施該第1工程及第2工程 。又，亦可並行實施第1工程及第2工程。 其次，第3工程，如圖9及圖1 〇所示，經由下側供 給管41及第1〜第3上側供給管42，43，44來供給氟化 氫水（第2藥液）至處理槽1 2。具體而言，切換機構5 〇 的第6開閉閥5 6會被開放。藉此，可在從純水供給管4 8 送進來的純水中混入來自第2藥液要素源62的高濃度的 氟化氫水。另一方面，切換極構5 〇的第6開閉閥5 6以外 的開閉狀態及吐出機構6 5的作動狀態是從上述第1及第 2工程起維持於原封不動的狀態。其結果，如圖丨〇所示 ’被弄薄成所疋濃度的氟化氫水（第2藥液）會作爲處理 液，經由下側供給管41及第1〜第3上側供給管42，43 ，44的全部供給管，以所定流量（例如，8〇 1/min以上） 供給至處理槽1 2的桌1區域1 2 a及第2區域1 2 b。 -73- 200847248 如此一來，一旦氟化氫水被供給至處理槽1 2內， 到目前爲止被積蓄於處理槽1 2的液體會僅以和往處理 1 2之氟化氫水的流入量大致同一量，從處理槽1 2的上 開口 12c排出至外槽1 5而去。其結果，處理槽12內的 水會藉由氟化氫水（第2藥液）置換而去。 如上述，第1〜第3上側供給管4 2，4 3，4 4是分 連結至一對的第2〜第4吐出構件7 2，7 3，7 4。從第1 第3上側供給管42，43，44送進的氟化氫水是經由該 2〜第4吐出構件72，73，74，直接吐出至處理槽12 第1區域1 2 b內。在本實施形態中，各對的吐出構件 ’ 7 3，7 4是在對向的處理槽1 2的一對壁面，以能夠對 的方式對稱性地配置。又，第2〜第4吐出構件72，73 74的各吐出口 72a，73a ’ 74a是以能夠在被保持於保 構件2 0的相隣晶圓W之間吐出純水之方式配列。 因此，從對向的各對吐出構件72，73，74的其中 方的吐出構件吐出的氟化氫水與從另一方的吐出構件吐 的氟化氫水會在晶圓W與晶圓W之間的間隙中衝突。 且，第2〜第4吐出構件72，73，74是被配置於相異 上下方向位置。因此，在處理槽12的第1區域12a內 至少在被處理晶圓W的板面周圍），被積蓄處理槽1 2 的液體會被激烈地攪拌。 因此，被供給至處理槽1 2內的至少被處理晶圓W 周圍之氟化氫水會與到目前爲至被積蓄於處理槽1 2內 至少被處理晶圓W的周圍之液體馬上混合。其結果， 則 槽 方 純 別 第 的 72 向 j 持 出 並 的 ( 內 的 的 氟 •74- 200847248 化氫水的濃度是一邊在處理槽1 2內的至少被處理 的周圍大槪保持均一，一邊上昇而去。亦即，一旦 水被供給至第1區域12a內的晶圓w周圍，則開 氫水之晶圓W的蝕刻，在此工程中，晶圓W的板 使用第2藥液（氟化氫水）的處理的均一性可被確 可是，本實施形態中是在此工程中，也會在 1 2的第2區域1 2b內從下側供給管4 1供給氟化氫 上述，下側供給管4 1是被連結至一對的第丨吐出 。從下側供給管4 1送進的氟化氫水是經由該第1 件71，吐出至處理槽1 2的第2區域12b。在本實 中，一對的第1吐出構件7 1是在對向的處理槽12 壁面，以能夠對向的方式來對稱性地配置。又，{ 所示，各第1吐出構件71是往斜下方吐出氟化氫 相異的吐出構件7 1吐出的氟化氫水是在第2區域 形成對稱流。 因此，從一方的第1吐出構件71吐出的氟化 從另一方的第1吐出構件71吐出的氟化氫水會在 域12b的中央部互相衝突，來自第1吐出構件71 吐出方向的液流會被打消。如此一來，沿著第2區 內的特定方向之局處的藥液流動會藉由處理槽12 及整流板28而打消，且第2區域12b內的壓力可 一地上昇。其結果，大致同一量的藥液會分別通過 28的多數個貫通孔29，從第2區域12b往第1區 沿著上下方向流入。 晶圓W .氟化氫 1始氟化 :面內之 保。 處理槽 水。如 構件71 吐出構 施形態 的一對 !口圖 10 水，從 12b內 氫水與 第2 Μ 之沿著 域1 2 b 的壁面 大致均 整流板 域1 2 a -75- 200847248 亦即，被供給至第2區域1 2b的氟化氫水會通過整流 板28 ’在整流板28的全面成爲大致均一的上昇流（並進 流），流入至第1區域12a。然後，藉由從該第2區域 12b流入至第丨區域12a的氟化氫水，在第1區域12a內 的液流全體會形成朝向上方。因此，可使漂浮於處理槽 1 2內的浮游物、例如藉由蝕刻處理來從晶圓w除去的粒 子在處理槽1 2內浮起至上方，更往外槽1 5流出。藉此， 可防止浮游物（粒子）附著於晶圓W。 其次，第4工程，如圖9及圖1 1所示，一邊將氟化 氫水（第2藥液）補充至處理槽1 2，一邊將晶圓W浸漬 於氟化氫水（第2藥液）中。具體而言，將切換機構5 0 的開閉狀態及吐出機構65的作動狀態從上述第3工程起 維持於原封不動的狀態。因此，可用所定流量（例如，8 0 1 /min以上）持續供給氟化氫水至處理槽12的第1區域 1 2a及第2區域1 2b。此工程是例如被實施數分鐘。 此工程中，如圖1 1所示，隨著往處理槽1 2之新的氟 化氫水的供給，到目前爲止被積蓄於處理槽1 2的氟化氫 水會只以和往處理槽1 2之新的氟化氫水的流入量同一量 ，從處理槽12的上方開口 1 2 c排出至外槽1 5而去。又 ，如上述，新的氟化氫水是以能夠在處理槽1 2的第1區 域1 2a內的至少晶圓W的周圍攪拌液體的方式供給至處 理槽1 2內。因此，被新供給的新氟化氫水會與到目前爲 止被積蓄於處理槽1 2內的氟化氫水馬上混合。亦即，在 配置於處理槽1 2的第1區域1 2 a內之被處理晶圓W的周 -76- 200847248 圍，氟化氫水的濃度會被維持於一定。其結果，可使該工 程中的蝕刻量在被處理晶圓W的板面內大致形成均一。 又，此工程中亦與第3工程同樣，在處理槽1 2的第 2區域1 2b內也從下側供給管4 1供給氟化氫水。然後， 如上述般，被供給至第2區域1 2b的氟化氫水會通過整流 板2 8 ’在整流板2 8的全面成爲大致均一的上昇流（並進 流），流入至第1區域1 2a。其結果，可使漂浮於處理槽 1 2內的浮游物在處理槽1 2內浮起至上方，更往外槽1 5 流出。藉此，可防止浮游物（粒子）附著於晶圓W。 其次，第5工程，如圖9及圖12所示，經由下側供 給管41以及第1〜第3上側供給管42，43，44來供給純 水至處理槽1 2，處理槽1 2內的氟化氫水會藉由純水置換 而去。具體而言，根據來自控制信號1 8的信號，切換機 構50的第6開閉閥56會被閉鎖。藉此，對於從純水供給 管48送進來的純水而言，來自第2藥液要素源62之高濃 度的氟化氫水的混人會停止。另一方面，其他切換機構 50的各開閉閥的開閉狀態及吐出機構65的作動狀態是從 上述第4工程起維持於原封不動的狀態。其結果，如圖 1 2所示，純水可經由下側供給管4 1及第1〜第3上側供 給管42，43，44，以所定流量（例如，80 1/min以上） 供給至處理槽1 2。 如此一來，一旦純水被供給至處理槽1 2內，則到目 前爲止被積蓄於處理槽1 2的液體會僅以和往處理槽1 2之 純水的流入量大致同一量，從處理槽12的上方開口 12c -77- 200847248 排出至外槽1 5而去。其結果，處理槽1 2內的氟化氫水（ 第2藥液）會藉由純水置換而去。另外，在第1區域12a 內的晶圓W的周圍，一旦氟化氫水被置換成純水，則終 了氟化氫水之晶圓W的鈾刻。 與第3工程之氟化氫水的供給同樣，從第1〜第3上 側供給管42，43，44供給純水至第1區域12a，藉此被 積蓄於處理槽1 2內的液體會被激烈地攪拌。因此，供給 至處理槽1 2內的至少被處理晶圓W的周圍之純水會與到 目前爲至被積蓄於處理槽1 2內的至少被處理晶圓W的周 圍之液體馬上混合。其結果，氟化氫水的濃度是一邊在處 理槽1 2內的至少被處理晶圓W的周圍大致被保持於均一 ，一邊降低而去。亦即，此工程中，利用殘存於處理槽 12內的氟化氫水（第2藥液）之處理可在晶圓W的板面 中大致均一地進行。 又，與第3工程之氟化氫水的供給同樣，從下側供給 管41供給純水至第2區域12b，藉此在第1區域12a內 的液流全體可朝向上方。因此，可使漂浮於處理槽1 2內 的浮游物在處理槽1 2浮起至上方，更流出至外槽1 5。藉 此，可防止浮游物（粒子）附著於晶圓W。 又，第5工程中，亦可取得與第1實施形態之基板處 理方法的第6工程同樣的作用效果。 如以上般，氟化氫的濃度是在從第3工程中上昇開始 到第5工程中下降爲止的期間，在第1區域1 2 a內的晶圓 W的板面附近內大致保持於均一。因此，從第3工程到第 -78- 200847248 5工程爲止的期間，可使晶圓W在其板面的全區域以大致 均一的蝕刻量來蝕刻。並且，往處理槽1 2之氟化氫水（ 第2藥液）的供給是利用下側供給管41及第1〜第3上 側供給管42，43，44來進行。因此，可設定更多往處理 槽1 2內之氟化氫水的供給，藉此可短時間進行使用氟化 氫水的處理。 其次，如圖9所示，第6工程，是經由下側供給管 41來供給氨水（第1藥液）至處理槽12的第2區域1 2b ，處理槽1 2內的純水會藉由氨水置換而去。具體而言， 與一邊參照圖4 一邊說明的第1實施形態之基板處理方法 的第3工程同樣，藉由氨水來置換處理槽1 2內的純水。 亦即，從下側供給管41供給氨水（第1藥液）至第2區 域12 b，經由整流構件2 8，使氨水（第1藥液）從第2區 域12b流入至第1區域12a，一邊在第1區域12a內的至 少晶圓W的附近形成上昇流，一邊藉由氨水（第1藥液 )來置換處理槽12內的純水。然後’在該第6工程中’ 可取得與一邊參照圖4 一邊說明的第1實施形態之基板處 理方法的第3工程同樣的作用效果。因此’有關該第6工 程之處理內容的詳細及所取得的作用效果’是參照在上述 第1實施形態的說明者’在此省略重複的說明。 其次，如圖9所示’第7工程’是一邊補充氨水（第 1藥液）至處理槽12 ’ 一邊將晶圓W浸漬於氨水（第1 藥液）中。具體而言，與一邊參照圖5 一邊說明的第1實 施形態之基板處理方法的第4工程同樣’將晶圓W浸漬 -79- 200847248 於氨水（第1藥液）中，處理該晶圓w。亦即，從下側供 給管41持續供給氨水（第1藥液）至第2區域12b，經 由整流構件28，使氨水（第！藥液）從第2區域12b流 入至第1區域12a，~邊在第1區域12a內的至少晶圓W 的附近形成上昇流，一邊將晶圓W浸漬於氨水（第1藥 液）中而進行處理。然後，在該第7工程中，可取得與一 邊參照圖5 —邊說明的第1實施形態之基板處理方法的第 4工程同樣的作用效果。因此，有關該第7工程之處理內 容的詳細及所取得的作用效果，是參照在上述第1實施形 態的說明者，在此省略重複的說明。 其次，如圖9所示，第8工程，是經由下側供給管 4 1來供給純水至處理槽1 2的第2區域12b，藉由純水來 置換處理槽1 2內的氨水。具體而言，與一邊參照圖6 — 邊說明的第1實施形態之基板處理方法的第5工程同樣， 藉由純水來置換處理槽1 2內的氨水，對晶圓W實施洗滌 處理。亦即，從下側供給管41供給純水至第2區域12b ，而經由整流構件2 8，使純水從第2區域1 2b流入至第1 區域1 2 a，一邊在第1區域1 2 a內的至少晶圓W的附近形 成上昇流，一邊藉由純水來置換處理槽1 2內的氨水（第 1藥液）。然後，在該第8工程中，可取得與一邊參照圖 6 —邊說明的第1實施形態之基板處理方法的第5工程同 樣的作用效果。因此，有關該第8工程之處理內容的詳細 及所取得的作用效果，是參照在上述第1實施形態的說明 者，在此省略重複的說明。 -80- 200847248 其次，如圖9所示，第9工程，是經由下側供給管 41及第1〜第3上側供給管42，43，44來持續供給純水 至處理槽1 2。具體而言，與一邊參照圖7 —邊說明的第i 實施形態之基板處理方法的第6工程同樣，對處理槽1 2 供給純水，而藉由純水來處理基板。亦即，從上側供給管 42，43，44供給純水至第1區域12a，且從下側供給管 41供給純水至第2區域12b，而一邊在第1區域12a內的 至少晶圓W的附近使液體攪拌，一邊藉由純水來處理基 板。然後，該第9工程中，可取得與一邊參照圖7 —邊說 明的第1實施形態之基板處理方法的第6工程同樣的作用 效果。因此，有關該第9工程之處理內容的詳細及所取得 的作用效果，是參照在上述第1實施形態的說明者，在此 省略重複的說明。 如以上般，使用氟化氫水的蝕刻處理（第3及第4工 程）及其後的洗滌處理（第5工程）、使用氨水的鈾刻處 理（第6及第7工程）及其後的洗滌處理（第8工程）、 以及使用純水的處理（第9工程）會進行。然後，如圖9 所示，在本實施形態中，更進行使用氟化氫水的蝕刻處理 (第1 〇及第1 1工程）及其後的洗滌處理（第12工程） 〇 具體而言，如圖9所示，使用氟化氫水的蝕刻處理包 含：作爲第1 〇工程之以氟化氫水來置換純水的工程、及 作爲第1 1工程之將晶圓W浸漬於氟化氫水而處理的工程 。又，洗滌處理包含作爲第1 2工程之以純水來置換氟化 -81 - 200847248 氫的工程。其中，第10工程可與一邊參照圖10 一邊詳述 過的第3工程相同。又，第11工程可與一邊參照圖n 一 邊詳述過的第4工程相同。又，第1 2工程可與一邊參照 圖12 —邊詳述過的第5工程相同。因此，在此有關第1〇 〜弟1 2工程方面省略重複的說明。 如此一來，一旦第1 2工程終了，則保持構件20構件 會上昇，晶圓W會從處理槽丨2內排出。完成以上那樣對 被處理晶圓W的一連串處理。 若根據以上那樣的本實施形態，則在同一處理槽i 2 內對晶圓W連續實施使用彼此相異種類的藥液之複數的 處理時，可按照藥液的種類來改變往處理槽1 2內之藥液 的供給方法。藉此，可用適於各藥液的方法來處理晶圓W 。其結果，可短時間進行對晶圓W之複數的處理的同時 ，可使晶圓W的板面內之處理的均一性提升。 具體而言，以能夠在處理槽內的至少被處理晶圓 W 的周圍形成上昇流之方式，供給第1藥液（氨水）至處理 槽1 2內。因此，在第1藥液供給至處理槽12內的期間， 藉由均一形成處理槽1 2內的上昇流，不僅晶圓W的板面 附近之第1藥液的濃度，連晶圓W的板面附近之液體的 流動也可在板面內大致形成均一。其結果，不依所被使用 的藥液種類，使晶圓W的板面內之使用第1藥液的處理 的均一性大幅度提升。 另一方面，以能夠在處理槽1 2內的至少晶圓W的周 圍攪拌液體之方式供給第2藥液（氟化氫水）至處理槽 -82- 200847248 1 2內。因此，在第2藥液供給至處理槽12內的期間，可 一邊設定更多第2藥液的每單位時間的供給量，一邊使晶 圓W的板面附近之第2藥液的濃度大致保持於均一。 其結果、可一邊確保晶圓W的板面內之處理的均一 性，一邊以短時間來進行使用第2藥液的處理。 因此，若根據本實施形態，則可短時間進行對晶圓W 的複數處理的同時，可使晶圓W的板面內之處理的均一 性提升。 又，若根據本實施形態，則可在第1區域1 2a內形成 上昇流，收容被處理晶圓W的同時對積蓄處理液（純水 )的處理槽12內的第2區域1 2b供給第1藥液（氨水） 。並且，在處理槽12內藉由第1藥液（氨水）置換後， 在第1區域12a內形成上昇流，而將水（純水）供給至處 理槽1 2的第2區域1 2b。無論哪個情況皆是至少在被處 理晶圓W的周圍形成大槪均一的上昇流。因此，可確保 沿著相當於被處理晶圓W配置於處理槽1 2內時的橫方向 的方向之被處理晶圓W的板面之使用第1藥液（氨水） 的處理的均一性。 又，若根據本實施形態，則在被處理晶圓W的附近 ，處理槽1 2內的處理液（純水）是由下側慢慢地藉由第 1藥液（氨水）來置換而去。同樣，在被處理晶圓W的附 近，處理槽12內的第1藥液（氨水）是由下方慢慢地藉 由水（純水）來置換而去。因此，在被處理晶圓W的板 面中，在被處理晶圓W配置於處理槽1 2內時配置於上方 -83- 200847248 的部份與配置於下方的部份之間，雖利用第1藥液（氨水 )的處理實質開始的時序及利用第1藥液（氨水）的處理 實質終了的時序不同，但可使實質進行第1藥液的處理的 時間大致形成相同。因此，可確保沿著相當於被處理晶圓 W配置於處理槽1 2內時的上下方向的方向之被處理晶圓 W的板面之處理的均一性。 另外，可對上述第2實施形態加諸各種的變更。例如 ，可將對上述第1實施形態的變形例適用於第2實施形態 中與第1實施形態同樣的部份。以下，具體說明對第2實 施形態的變形之一例。 上述第2實施形態中，在使用氟化氫水來處理的工程 (第3及第4工程、以及第10及第11工程）中，是顯示 從下側供給管4 1供給氟化氫水至處理槽1 2的第2區域 12b，且從上側供給管42，43，44供給氟化氫水至處理槽 12的第1區域1 2 a之例，但並非限於此，亦可從上側供 給管42，43，44只往處理槽12的第1區域供給氟化氫水 。並且，在上述實施形態中，是顯示從全部的上側供給管 42，43，44供給氟化氫水至處理槽12的第1區域12a內 之例，但並非限於此，亦可從第1〜第3上側供給管4 1， 42，43的其中一個或二個供給氟化氫水。 又’上述第2實施形態中，在使用氨水來處理的工程 (第6及第7工程）、及使用氨水來置換純水的工程（第 8工程）中，是顯示只從下側供給管41來供給第1藥液 (氨水）或純水至處理槽1 2內之例，但並非限於此。亦 -84 - 200847248 可從下側供給管4 1供給第1藥液或純水至處理槽1 2內 同時，並行從第1〜第3上側供給管42，43，44的其 至少任何一個的供給管來供給第1藥液或純水至處理 1 2內。有關第1區域12a內之液體的流動，只要被上 流支配，或至少在第1區域12a內所收容的晶圓W的 圍形成上昇流，便可使晶圓W在其板面內大致均一地 理。 又，上述第2實施形態中，在以純水來置換氟化氫 的工程（第5及第12工程）、及使用純水來處理的工 (第9工程）中，是顯示從全部的供給管41，42，43 44來供給處理液（純水）至處理槽1 2內之例，但並非 於此。例如，亦可停止來自下側供給管4 1之純水的供 。又，亦可從第1〜第3上側供給管41，4 2，4 3的其 一個或二個來供給純水。至少在第1區域1 2 a內所被收 的晶圓W周圍吐出處理液，若所被積蓄的液體在晶圓 的周圍被攪拌，則可更確實地進行對該晶圓W的洗滌 理。並且，可從晶圓W以高除去效率來除去附著物。 又，上述第2實施形態中，是顯示將使用第1藥液 處理設爲使用氨水之矽晶圓的飩刻處理，將使用第2藥 的處理設爲使用氟化氫水之矽晶圓的蝕刻處理之例，但 非限於此，亦可進行各種的變更。例如，將使用第1藥 的處理設爲使用與被處理基板的反應性較高的藥液之處 ，將使用第2藥液的處理設爲使用與被處理基板的應性 第1藥液更低的藥液之處理。又，亦可將使用第1藥液 的 中 槽 昇 周 處 水 程 限 給 中 容 W 處 的 液 並 液 理 比 的 -85- 200847248 處理設爲必須以高精度來管理處理的進行程度之處理，將 使用第2藥液的處理設爲可不必以高精度來管理處理的進 行程度之處理。此時，第1藥液及第2藥液可爲同一種類 。並且，在上述實施形態中，對晶圓W依序實施使用氟 化氫水的蝕刻處理及其後的洗滌處理、及使用氨水的蝕刻 處理及其後的洗滌處理、及使用純水的處理、以及第二次 使用氟化氫水的蝕刻處理及其後的洗滌處理。但，當然對 晶圓W所實施的處理並非限於此例，亦可適當組合使用 第1藥液的處理及使用第2藥液的處理。 又，上述第2實施形態中，基板處理裝置10是包含 超音波發生裝置3 0，但並非限於此例，超音波發生裝置 30爲任意。另一方面，在上述基板處理方法中的各工程 、例如上述第3工程〜第1 2工程中的任一個以上的工程 中，可使超音波從超音波發生裝置3 0發生於處理槽1 2內 的處理液。若根據如此的方法，則可從被處理晶圓W以 高除去效率來除去粒子。 又，上述第2實施形態中，整流構件2 8是由具有多 數個貫通孔29的整流板所構成，但並非限於此例，亦可 適用各種公知的整流構件。並且，爲了在處理槽1 2的第 1區域1 2 a內所配置的被處理晶圓W的周圍形成均一的上 昇流，亦可在處理槽12的第2區域1213內設置補助整流 板。例如，以能夠和經由下側供給管41之往第2區域 1 2b內的液體的供給口（在上述實施形態中是第1吐出構 件7 1的吐出口 7 1 a )對向之方式來設置板狀的補助整流 -86- 200847248 板’藉此可打消沿著經由下側供給管4· 1來供給的液體的 供給方向之局處的流動。而且，從下側供給管4 1經由第 1吐出構件71來使處理液流入處理槽12的第2區域12b 內，但並非限於此，亦可省略第1吐出構件71。 又’上述第2實施形態中，從沿著鉛直方向之相異的 三個位置供給處理液至處理槽1 2的第1區域丨2 a內，但 並非限於此例。亦可只從沿著上下方向之一個或二個的位 置供給處理液至第1區域1 2 a內。或，從沿著上下方向之 四個以上的位置供給處理液至第1區域1 2a內。 又，以上的說明中，是將基板處理裝置及基板處理方 法適用於使利用相異種類的藥液之複數的處理連續實施於 晶圓W之例，但並非限於此例，亦可適用於對LCD基板 或CD基板的蝕刻處理及洗滌處理，更可適用於蝕刻處理 及洗滌處理以外的各種處理。 [第3實施形態] 其次，主要參照圖1 3及圖1 4來說明本發明的基板處 理裝置及基板處理方法、基板處理程式及程式記錄媒體的 第3實施形態。 在第3實施形態中是說明從種類相異的複數藥液選擇 一個藥液，且在單一的處理槽內選擇性地對被處理基板實 施使用所被選擇的一個藥液之處理例。特別是在以下的第 3實施形態中是使用與在第1實施形態中已說明過的裝置 實質相同的基板處理裝置1 〇，對作爲被處理基板的晶圓 -87- 200847248 實施從與被處理基板的反應性相異的二種類藥液（第1藥 液及第2藥液）選擇的一個藥液之處理。又，如以下說明 那樣，二種類的處理中使用與晶圓的反應性更高的第1藥 液之處理是與一邊參照圖1〜圖8 —邊作爲第1實施形態 說明過之藉由氨水來處理晶圓的方法大致相同。另一方面 ’如以下所說明哪樣，二種類的處理中使用與晶圓的反應 性更低的第2藥液之處理是與一邊參照圖9〜圖1 2 —邊 在第2實施形態說明過之藉由氟化氫水來處理晶圓之方法 大致相同。因此，在以下的說明中，有關與上述第1實施 形態或第2實施形態相同的部份省略重複的說明。 以下，主要參照圖1 3及圖14的同時，適當參照第1 實施形態及第1實施形態中所參照的圖1〜圖1 2來說明 有關第3實施形態。在此，圖1 3及圖1 4是用以說明基板 處理裝置、基板處理方法、基板處理程式、及程式記錄媒 體的第3實施形態。其中，圖13是用以說明使用第1藥 液時的基板處理方法的表，圖1 4是用以說明使用第2藥 液時的基板處理方法的表。 在第3實施形態中，是使用在第1實施形態所已說明 過的基板處理裝置10 (參照圖1及圖2 )。因此，如圖1 所示，基板處理裝置1 0的液供給設備4 0具有：以高濃度 的氨水（NH4〇H )作爲藥液要素而積蓄的第1藥液要素源 6 1、及以高濃度含氟化氫（HF )的氟化氫水作爲藥液要 素而積畜的第2藥液要素源6 2。如圖1所示，切換粒構 5 〇的第5開閉閥5 5是與第1藥液要素源61連結，第6 -88- 200847248 開閉閥5 6是與第2藥液要素源62連結。然後，可藉由開 啓第5開閉閥5 5，使從第1藥液要素源61送進來的高濃 度氨水混入至從純水供給管4 8送入的純水，生成所望濃 度的氨水（第1藥液）作爲處理液。又，可藉由開啓第6 開閉閥56，使從第2藥液要素源62送進來的高濃度氟化 氫水混入至從純水供給管48送入的純水，生成所望濃度 的氟化氫水（第2藥液）作爲處理液。 又，在第1實施形態及第2實施形態中雖未說明，但 如圖1所示，基板處理裝置1 0的控制裝置1 8更具有：設 定藉由氨水（第1藥液）或氟化氫水（第2藥液）的哪個 來對晶圓W進行處理之設定器1 9c、及供操作者輸入有關 藉由氨水或氟化氫水的哪個來對晶圓 W進行處理之例如 由觸控面板等所構成的輸入器19d。設定器19c的設定可 根據在輸入器1 9d藉由操作者等自外部輸入的資訊來進行 。另外，設定器1 9c的設定並非限於來自輸入器1 9d的資 訊，例如可根據藉由遙控操作自主電腦等傳送的資訊進行 〇 其次，主要利用圖1 3及圖1 4來說明有關第3實施形 態之晶圓W的處理方法。在此，在圖1 3及圖14的上側 供給管的欄中顯示在各工程中從上側供給管42，43，44 供給的液體。並且，在圖圖1 3及圖1 4的下側供給管的欄 中顯示在各工程中從下側供給管41供給的液體。而且， 在圖圖1 3及圖1 4的外槽的欄中顯示在各工程中從處理槽 12溢出至外槽15的液體中所含的一個。又，圖1 3及圖 -89- 200847248 1 4的上側供給管、下側供給管及外槽的攔中所示的「DIW 」是表不純水，「nh3」是表示氨水，「hf」是表不氟化 氫水。 另外，以下說明的處理方法，如上述般’使用與晶圓 w的反應性高的第1藥液（氨水）之處理、及使用與晶圓 w的反應性比第1藥液（氨水）更低的第2藥液（氟化氫 水）之處理等二種類的處理會在基板處理裝置1 〇的處理 槽1 2內對晶圓W選擇性實施。以下，針對各工程來進行 說明。 首先，如圖1 3及圖14所示，第1工程，是設定將氨 水（第1藥液）及氟化氫水（第2藥液）的哪個使用於晶 圓 W的處理。具體而言，藉由觸控面板等所構成的控制 裝置18的輸入器19d，操作者會輸入有關藉由氨水及氟 化氫水的哪個來對晶圓W進行處理之資訊。 其次，如圖13及圖14所示，第2工程’是根據輸入 至輸入器19d的資訊，在設定器19c中進行有關藉由氨水 及氟化氫水的哪個來對晶圓W進行處理之設定。如以下 說明，依使用的藥液，對晶圓 W的處理方法、更詳細是 往處理槽1 2內之藥液及純水的供給方法會有所不同。以 下，首先，一邊主要參照圖13 —邊說明藉由氨水（第1 藥液）來處理晶圓W的處理方法。然後’ 一邊主要參照 圖14 一邊說明藉由氟化氫水（第2藥液）來處理晶圓W 的處理方法。Round W, Further, the wafer W may be immersed in the treatment liquid accumulated in the treatment tank 12; The lifting mechanism is connected to the control device 18. The storage of the wafer W in the first region 12a of the processing tank 12, The discharge of the wafer W from the first region 12a of the processing tank 12 can be controlled by the control device 18. Secondly, The description relates to the ultrasonic generating device 30. As shown in Figure 1, The ultrasonic generating device 30 has: a vibrator 3 8 installed outside the bottom of the treatment tank 12 And a high frequency driving power source for driving the vibrator 38. And an ultrasonic oscillator 34 connected to the high frequency driving power source 32. In this embodiment, a plurality of vibrators 3 8 are provided. Each of the vibrators 38 is arranged so as to be able to partially occupy the outer surface of the bottom of the processing tank 12. also, As shown in Figure 1, The ultrasonic generating device 30 further has a drive switching mechanism 36 connected to the ultrasonic oscillator 34 and each of the vibrators 38. By driving the switching mechanism 3 6, It can drive a plurality of vibrators 3 8 And individually drive one or two -55- 200847248 or more vibrators 3 8 . Once the vibrator 38 is driven to vibrate, Then, the ultrasonic wave propagates through the bottom of the processing tank 12 and the rectifying member 28 to the processing liquid accumulated in the first region 12a of the processing tank 12. With this, The ultrasonic wave is generated in the treatment liquid in the treatment tank 12. In addition, The ultrasonic generating device 30 is connected to the control device 108. The imparting of the ultrasonic waves to the processing liquid is controlled by the control unit 18. Secondly, A description will be given of the control device 18. As above, The control device 18 is a component that is connected to the substrate processing device 10, It controls the actions of each component. In this embodiment, The control device 18 has: a controller 19a composed of a CPU, And a memory medium 1 9b connected to the controller 19a. In the recording medium 1 9b, A program for executing a processing method of the processed wafer W to be described later is stored together with various setting materials. The recording medium 19b is a memory such as a ROM or a RAM. Hard disk, CD-ROM, etc. And other known recording media. Secondly, A method of processing the wafer W by the substrate processing apparatus 10 configured as above will be mainly described with reference to Figs. 3 to 8 . First of all, The first project, As shown in Figure 3, Pure water is stored in the treatment tank 12 as a treatment liquid. in particular, According to the signal from the control device 18, Driving the discharge mechanism 6 5, The pure water accumulated in the pure water source 64 is sent to the switching mechanism 50 in the pure water supply pipe 48. The pure water flowing in the pure water supply pipe 48 is adjusted by the adjusting device 67 to adjust the concentration of the dissolved gas. The amount of air bubbles mixed, Temperature, etc. at this time, The fifth on-off valve of the switching mechanism 50 - 56 - 200847248 5 5 and the sixth on-off valve 56 are based on signals from the control device 18. Is blocked. Therefore, in the pure water transferred from the pure water supply pipe 48, The liquid chemical elements from the first chemical liquid element source 61 and the second chemical liquid element source 62 are not mixed. that is, Pure water can be supplied to the treatment tank 12 as a treatment liquid. also, at this time, The first to fourth on-off valves 5 1 of the switching mechanism 50 5 2 , 5 3, 5 4 is based on the signal from the control device 18, All are open. therefore, The lower supply pipe 41 and the first to third upper supply pipes 42 are provided. All of the supply tubes of 43 '44 are supplied with pure water into the treatment tank 12. and so, The amount of pure water supplied per unit time (for example, 40 to 90 Ι/min) can be set more. the result, Pure water can be efficiently accumulated in the treatment tank 12 in a short time. Next, the second project is to accommodate the wafer W in the first region 12a of the processing tank 12. in particular, According to the signal from the control device 18, A lifting mechanism (not shown) lowers the retaining member 20. at this time, The holding member 20 is a processed wafer W that holds a predetermined sheet (e.g., 50 sheets). the result, The plurality of wafers W can be housed in the first region 1 2 a of the processing tank 12, It is immersed in pure water accumulated in the treatment tank 1 2 . During the second project, The opening and closing state of the switching mechanism 40 and the operating state of the discharge mechanism 65 are maintained in the original state from the first project. therefore, The lower supply pipe 41 and the first to third upper supply pipes 4 2 are provided. 4 3, All the supply pipes of 4 4 continue to supply pure water into the treatment tank 1 2 , Pure water will overflow from the treatment tank 12 to the outer tank 15. In addition, The first project and the second project can also be implemented in reverse order. also, The first project and the second project can also be implemented in parallel. -57- 200847248 Secondly, The third project, As shown in Figure 4, The ammonia water (first chemical liquid) is supplied to the second region 12b of the treatment tank 12 via the lower supply pipe 4 1 , The pure water in the treatment tank 1 2 is replaced by ammonia water. in particular, First of all , The output of the discharge mechanism 65 is lowered according to the signal from the control signal 18. and, The fifth opening and closing valve 55 of the switching mechanism 50 is opened. Take this The high-concentration ammonia water from the first chemical liquid element source 61 can be mixed into the pure water sent from the pure water supply pipe 48. also, Second to fourth on-off valves 72, 73, 74 will be blocked. the result, As shown in Figure 4, the ammonia water (chemical solution) that has been thinned to a predetermined concentration will act as a treatment liquid. Via the supply tube 41, At a given flow rate (for example, 40 to 50 Ι/min) is supplied to the second region 1 2 b of the processing tank 12. As above, The lower supply pipe 41 is a first discharge member 71 that is coupled to a pair. The chemical solution fed from the lower supply pipe 41 is discharged into the second region 12b of the treatment tank 12 via the first discharge member 71. In this embodiment, The pair of first discharge members 71 are symmetrically arranged such that the pair of wall faces ' of the opposing treatment grooves 12 are alignable. also, As shown in Fig. 4, each of the first discharge members 71 discharges the chemical liquid obliquely downward. The chemical liquid discharged from the different discharge members 71 forms a symmetrical flow in the second region 1 2b. therefore, The liquid medicine discharged from one of the first discharge members 71, The chemical liquid discharged from the other first discharge member 71 collides with each other in the central portion of the second region 12b. The flow from the first discharge member 7 1 in the discharge direction is canceled. As a result, The flow of the chemical solution along the specific direction in the second region 1 2 b is canceled by the wall surface of the treatment tank 12 and the rectifying plate 28. And the pressure in the 2nd area 12b can be roughly equal to -58-200847248 liters. the result, Approximately the same amount of the chemical solution flows in the vertical direction from the second region 12b of the second region 12b through the plurality of through holes 29' of the flow regulating plate 28, respectively. that is, The inflow of the chemical solution from the second region 12b into the first region 12a can be performed substantially uniformly over substantially the entire area of the flow regulating plate 28. As above, An upflow (and inflow) is formed in the first region 12a of the treatment tank 12, The pure water in the treatment tank 1 2 is replaced by the chemical liquid from the lower side of the treatment tank 12. also, As shown in Fig. 4, 'with the supply of the liquid medicine into the treatment tank 12, The treatment liquid accumulated in the treatment tank 12 so far is only approximately the same amount as the inflow amount of the chemical solution to the treatment tank 12. The upper opening 1 2 c of the treatment tank 1 2 is discharged to the outer tank 15 . that is, According to this embodiment, The pure water in the treatment tank 1 2 can be efficiently replaced by the chemical liquid (ammonia water). It can save the amount of liquid required for replacement. In addition, Once the ammonia water is supplied to the periphery of the wafer W in the first region 1 2 a, Then, the uranium engraving of the wafer W of ammonia water is started. As above, According to this embodiment, Then, the chemical solution flows into the first region 1 2 a substantially uniformly from substantially the entire area on the rectifying plate 28. Therefore, the uniformity of the processing of the wafer W in the direction corresponding to the lateral direction (horizontal direction) in the state of being disposed in the first region 12a can be ensured. also, As above, By flowing ammonia water from the first region 1 2 b into the first region 1 2 a, The entire flow in the first region 1 2 a faces upward. therefore, The floats floating in the treatment tank 12 can be floated upward from the wafer W by, for example, an etching process. It flows out to the outer tank 1 5 . This prevents the floating particles (particles) from adhering to the wafer W. Second, the fourth project, As shown in Figure 5, Adding ammonia (medicine) to the treatment tank 1 2, The wafer W is immersed in ammonia water (chemical liquid). in particular, The opening and closing state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained in the original state from the third process. Therefore, the second region 1 2 b of the processing tank 12 is at a predetermined flow rate (for example, 4 0~ 5 0 Ι/min) to continuously supply ammonia. This project is implemented, for example, between a few minutes. In this project, An upward flow of the chemical liquid is formed in the first region 1 2a of the treatment tank 12. also, As shown in Figure 5, With the inflow of new ammonia water from the second region 1 2 b to the first region 1 2 a, The ammonia water accumulated in the treatment tank 12 so far will be substantially the same amount as the inflow of the new ammonia water to the treatment tank 12. It is discharged from the upper opening 1 2 c of the treatment tank 1 2 to the outer tank 15 . That is. that is, The concentration of ammonia water around the processed wafer W disposed in the first region 12a of the processing tank 12 is kept constant. And the flow of ammonia water on the surface of the wafer W is treated. For example, the flow rate will be approximately uniform across the board. therefore, Although the silicon wafer W to be processed is sensitive to ammonia, It is also possible to make the uranium amount in the project substantially uniform in the plane of the wafer W to be processed. In addition, Same as the third project above, The ammonia water flowing from the second region 12b to the first region 1 2 a is The liquid flow in the first region 1 2 a is entirely upward. therefore, The float floating in the treatment tank 12 can be floated upward in the treatment tank 12, It flows out to the outer tank 1 5 . With this, It prevents float-60-200847248 (particles) from adhering to wafer W. Secondly, The fifth project, As shown in Figure 6, Water is supplied to the second region 1 2b of the treatment tank 12 via the lower supply pipe 4 1 , The ammonia in the treatment tank 1 2 is replaced by pure water. in particular, According to the signal from the control device 18, The fifth opening and closing valve 55 of the switching mechanism 50 is blocked. By this, The mixing of the high-concentration ammonia water from the first chemical liquid element source 61 into the pure water sent from the pure water supply pipe 48 is stopped. on the other hand, The opening and closing state of each of the opening and closing valves of the other switching mechanism 50 and the operation state of the discharge mechanism 65 are maintained in the original state from the fourth project. the result, Can be set to flow (for example, 40 to 50 1/min), pure water is supplied to the second region 12b of the treatment tank 12. that is, From the third project to the fifth project, The supply amount of the treatment liquid supplied to the second region 1 2 b of the treatment tank 12 is substantially constant. As above, And as shown in Figure 6, Each of the first discharge members 71 discharges pure water obliquely downward. The pure water discharged from the different discharge members 71 forms a symmetrical flow in the second region 1 2 b. therefore, Pure water discharged from one of the first discharge members 7 1 The pure water discharged from the other first discharge member 7 1 collides with each other in the central portion of the second region 1 2b. The flow from the first discharge member 71 in the discharge direction is canceled. As a result, The flow of pure water along a specific direction in the second region 1 2b is canceled by the wall surface of the treatment tank 12 and the rectifying plate 28, Further, the pressure in the second region 12b can be increased substantially uniformly. the result, Approximately the same amount of pure water passes through a plurality of through holes 2 9 of the rectifying plate 28 respectively. The second region 1 2b flows into the first region 1 2a in the vertical direction. that is, From the second region 1 2b to -61 - 200847248, the inflow of pure water in the first region 1 2 a can be performed substantially uniformly over substantially the entire area of the rectifying plate 28. As above, An upflow is formed in the first region 12a of the treatment tank 12, The ammonia water (chemical liquid) in the treatment tank 12 is replaced by pure water from the lower side of the treatment tank 12. also, As shown in Figure 4, With the supply of pure water to the tank 12, The ammonia water accumulated in the treatment tank 12 so far will be substantially the same amount as the inflow amount of the pure water to the treatment tank 12. It is discharged from the upper opening 1 2c of the treatment tank 12 to the outer tank 15. that is, According to this embodiment, The chemical liquid (ammonia water) in the treatment tank 1 2 can be efficiently replaced by pure water. also, Similar to the third and fourth projects above, In this fifth project, Also by the pure water flowing from the second region 12b to the first region 12a, The liquid flow in the first region 1 2a is directed upward. therefore, The float floating in the treatment tank 12 can be floated upward in the treatment tank 12, It flows out to the outer tank 1 5 . With this, Prevents floating matter (particles) from adhering to the wafer W 〇 Once around the wafer w in the first region 12a, Ammonia is replaced by pure water. Then, the etching of the wafer W using ammonia water is completed. As above, According to this embodiment, Then, the pure water flows into the first region 12a substantially uniformly from substantially the entire area on the rectifying plate 28. therefore, The uniformity of the processing of the wafer W in the direction corresponding to the lateral direction (horizontal direction) in the state of being disposed in the first region 1 2 a can be ensured. also, From the beginning of the etching of the wafer W using ammonia water to the end of the period -62- 200847248, An upward flow of ammonia water is often formed in the first region 12a of the treatment tank 12. Therefore, the uniformity of the processing of the wafer W in the direction corresponding to the lateral direction (horizontal direction) in the state of being disposed in the first region 1 2a can be ensured. also, As above, The treatment liquid (pure water) in the treatment tank 12 (especially around the wafer w to be processed) is gradually replaced by the chemical liquid (ammonia water) from the lower side. same, As above, The chemical solution (ammonia water) in the treatment tank 1 2 (especially around the wafer W to be processed) is slowly replaced by water (pure water) from below. therefore, As shown in Figure 8, The concentration of the chemical solution (the dotted line in FIG. 8) around the upper portion of the wafer W in the first region 1 2a of the processing tank 12 and the concentration of the chemical solution around the lower portion (FIG. 8 The solid line) is a period of time after the start of the supply of the chemical liquid in the processing tank 12, And a period of time after the supply of the pure water in the treatment tank 1 2 starts, Form different sputum. that is, In the plane of the wafer W, When the wafer W is disposed in the processing tank 12, the upper portion is disposed between the lower portion and the lower portion. The timing at which the treatment of the chemical liquid is substantially started and the timing at which the treatment with the chemical liquid is substantially completed are different. however, The supply flow rate per unit time of the chemical solution in the second region 1 2b of the processing tank 1 2 in the third process can be made pure in the second region 1 2b of the processing tank 1 2 in the fifth project. The supply flow per unit time of water is roughly the same. When the wafer W in the surface of the wafer W is disposed in the processing tank 12, the portion disposed above and the portion disposed below, The time for substantially performing the treatment of the first chemical liquid is substantially the same (see Fig. 8). therefore, The uniformity of the processing of the surface of the wafer W to be processed in the direction corresponding to the vertical direction when the wafer W to be processed is disposed in the processing tank -63 - 200847248 1 2 can be ensured. also, In the third to fifth works for processing the wafer to be processed, Around the surface of the wafer W to be processed, A uniform flow of uniform liquid is formed. that is, The flow of ammonia water on the surface of the processed wafer W, For example, the flow rate will be approximately uniform in the plane of the board. therefore, Even if the sand wafer W to be treated is sensitive to ammonia, The uranium engraving is also substantially uniform in the plane of the wafer W to be processed. As a result, Between the third project and the fifth project, The wafer W can be etched with a uniform uranium engraving in the entire area of its surface. Secondly, The sixth project, As shown in Figure 7, The lower supply pipe 41 and the first to third upper supply pipes 42 are provided. 43, 44, the treatment tank 12 is supplied with pure water. in particular, First of all, According to the signal from the control signal 丨8, The output of the discharge mechanism 65 rises. and, The second to fourth on-off valves 52 of the switching mechanism 50, 53, 54 will be opened. the result, As shown in Figure 7, The pure water passes through the lower supply pipe 41 and the first to third upper supply pipes 42. 43, 44 at the specified flow rate (for example, 80 Ι/min or more) is supplied to the treatment tank 1 2 . As above, First to third upper supply pipes 42, 43, 44 is a second to fourth discharge member 72 that are connected to a pair, respectively. 73, 74. From the first to third upper supply pipes 42, 43, The pure water sent in 44 passes through the second to fourth discharge members 72. 73, 74, It is directly discharged into the first region 12a of the treatment tank 12. In this embodiment, Each pair of ejection members 72, 73, 74 is symmetrically arranged in such a manner that a pair of wall faces of the opposing processing tanks 1 2 are opposed to each other -64 - 200847248. also, Second to fourth discharge members 72, 73, 74 outlets 72a, 73, 74a is arranged so that pure water can be discharged between adjacent wafers W held by the holding member 2A. therefore, From the opposite pair of discharge members 72, 73, The pure water discharged from one of the discharge members of the 74 and the pure water discharged from the other discharge member collide with each other in the gap between the wafer W and the wafer W. and, The second to fourth discharge members 72, 73, 74 is placed in a different vertical position. therefore, In the first region 12a of the treatment tank 12 (at least around the surface of the wafer W to be processed), The liquid (pure water) accumulated in the treatment tank 12 is vigorously stirred. In addition, Compared to the 3rd to 5th projects, In this project, the supply amount of the treatment liquid to the liquid in the treatment tank 12 is increased per unit time. These results, It is also possible to surely wash away from the periphery of the wafer W. In the fifth project, the chemical solution remaining in the ion level around the wafer W is not completely removed. also, same, From the wafer W, deposits (particles) adhering to the wafer W are not completely removed in the fifth process. In addition, In this project, For the wafer W supported by the holding member 20 from below, Not just below, The treatment liquid (pure water) is also spit from both sides. therefore, Compared with the 3rd to 5th projects, Even if the supply of treatment liquid per unit time is large, Still, the support wafer W can be stabilized by the holding member 2 。. also, In this embodiment, Pure water is also supplied from the lower supply pipe 41 in the second region 1 2b of the treatment tank 12. Pure water supplied to the second region 12b, As above, Through the rectifying plate 28, A substantially uniform upward flow (and inflow) is formed on the entire surface of the rectifying plate 28, Flow into the first area -65- 200847248 12a. then, By flowing from the second region 12b to the pure water of the first tease, The entire flow in the first region 1 2a is formed toward the direction, The chemical liquid remaining around the wafer W or the wafer W deposit can be floated upward in the processing tank 12, More to the outer slot 1 5 flow, The wafer W can be washed more reliably, The removed adherend is again attached to the wafer W. Such a sixth project is performed, for example, for several minutes. Once the 6th, Then the member of the holding member 20 will rise, Wafer W will be discharged from the sky. By completing the above-described series of processed wafers W as described above, according to the present embodiment as described above, An upflow can be formed in the first zone, While the wafer W to be processed is stored, the chemical solution is supplied to the second region 12b in the processing tank 12 (pure water). and, After being replaced by the liquid in the treatment tank 12, Forming an upflow in the 12th, The pure water is supplied to the domain 1 2b of the treatment tank 12 . Either case is at least a uniform upward flow of the wafer W to be processed. therefore, It is possible to ensure the uniformity of the processing of the plate surface of the portion W in the direction corresponding to the horizontal direction when the circle W is disposed in the processing tank 12. and, In the vicinity of the wafer W to be processed, The liquid in the treatment tank 12 is slowly replaced by the chemical liquid from the lower side. same, In the vicinity of wafer W, The liquid medicine in the treatment tank 1 2 is replaced by slow water from below. therefore, When the processing wafer W is disposed in the processing tank 12 in the processing surface of the wafer W to be processed, the portion disposed above is placed between the lower portions. Although the treatment with the chemical solution is substantially above the field 12a. Removed out. It can prevent the end of the project. Field 12a treatment liquid (ammonia 1 area _ 2 area surrounding shape processing crystal wafer processing is processed by , The timing of the dispensing and dispensing timing -66-200847248 and the processing using the liquid medicine are substantially different. However, the time during which the chemical liquid is substantially treated can be substantially the same. therefore, The uniformity of the processing of the surface of the wafer W to be processed in the direction of the vertical direction when the wafer W to be processed is disposed in the processing tank 12 can be ensured. also, At least around the wafer W to be processed disposed in the first region 丨 2a of the processing tank 12, Form an upflow of the liquid. therefore, Not only the t-degree of the liquid is kept at the same time, but also the flow of the liquid medicine on the surface of the wafer W to be processed, For example, the flow rate will also be approximately uniform in the plane of the board. So ‘may not depend on the type of liquid used, Ensure uniformity of processing of the surface of the wafer W being processed. With this, According to this embodiment, It may not depend on the type of liquid used, While ensuring the uniformity of the degree of processing within the surface of the wafer W to be processed, Handle it. In addition, Various modifications can be made to the above embodiment. E.g, In the above embodiment, When the treatment liquid (pure water) stored in the treatment tank 12 is replaced with a chemical solution (ammonia water), Only the liquid medicine is supplied from the lower supply pipe 4 1 to the treatment tank 1 2 , When the chemical liquid (ammonia water) stored in the treatment tank 12 is replaced with pure water, Only pure water is supplied from the lower supply pipe 41 to the treatment tank 1 2 , But it is not limited to this example. It is also possible to supply the chemical liquid or the pure water from the lower supply pipe 41 to the inside of the treatment tank 12, The tubes are supplied from the first to third upper sides in parallel. 43, The supply pipe of at least any one of 44 supplies the chemical liquid or pure water into the treatment tank 12. Regarding the flow of the liquid in the first region 1 2a, As long as it is dominated by the upflow, Or at least an upward flow is formed around the crystal W accommodated in the first region 1 2a. The wafer W can be uniformly processed in its plate surface by approximately -67-200847248. also, In the above embodiment, From the entire supply pipe 41 in the sixth project, 42, 43, 44 supplying the treatment liquid (pure water) into the treatment tank 12, But it is not limited to this example. E.g, The supply of pure water from the lower supply pipe 41 can also be stopped. also, The tube 41 can also be supplied from the first to third upper sides. 42, One or two of 43 supply pure water. The treatment liquid is discharged at least around the crystal W accommodated in the first region 1 2a, And the accumulated liquid is stirred around the wafer W, The washing process of the wafer W can be performed more surely. and, Attachments can be removed from the wafer W with high removal efficiency. also, In the above embodiment, The liquid medicine is ammonia water. But not limited to this example, Various liquids can also be used as the liquid medicine. As above, Can not depend on the type of liquid medicine, The wafer to be processed W is processed substantially uniformly in its plate surface. also, In the above embodiment, The substrate processing apparatus 1 包含 includes an ultrasonic generating device 30, But not limited to this example, The ultrasonic generating device 30 is arbitrary. on the other hand, In each of the above substrate processing methods, For example, the third project (replacement of the treatment liquid by the chemical liquid), In the fourth project (wafer W immersion to liquid medicine) and the fifth project (replacement of liquid water using pure water), Ultrasonic waves may also be generated from the processing liquid in the processing tank 12 from the ultrasonic generating device 30. According to such a method, The particles can then be removed from the treated wafer W by partial removal efficiency. also, In the above embodiment, The flow regulating member 28 is constituted by a rectifying plate having a plurality of through holes 29, But not limited to this example, Also applicable -68- 200847248 various known rectifying members. and, In order to form a uniform ascending flow around the processed wafer W disposed in the first region 12a of the processing tank 12, A supplementary rectifying plate may be provided in the second region 1 2b of the treatment tank 12. E.g, A plate-like shape can be provided so as to face the supply port of the liquid in the second region 12b via the lower supply pipe 41 (in the above embodiment, the discharge port 7 1 a of the first discharge member 7 1 ). Subsidized rectifier board, Thereby, the flow along the supply direction of the liquid supplied through the lower supply pipe 41 can be canceled. and, The processing liquid enters the second region 1 2b of the processing tank 1 2 from the lower supply pipe 41 via the first discharge member 71. But not limited to this, The first discharge member 7 1 may be omitted. also, In the above embodiment, The treatment liquid is supplied from the three different positions in the vertical direction to the first region 1 2 a of the treatment tank 1 2, But it is not limited to this example. It is also possible to supply the treatment liquid to the first region 1 2 a only from one or two positions in the up and down direction. or, The treatment liquid is supplied from the four or more positions in the vertical direction to the first region 1 2a. also, In the above description, The substrate processing apparatus and the substrate processing method are applied to the etching treatment and the washing treatment of the wafer W, But not limited to this example, It can also be applied to etching and washing treatment of LCD substrates or CD substrates. Further, it is applicable to various processes other than the etching process and the washing process. [Second embodiment] Next, A substrate processing apparatus and a substrate processing method of the present invention will be mainly described with reference to FIGS. 9 to 12, Substrate processing program, And the second embodiment of the program recording medium -69-200847248. In the second embodiment, a plurality of types of processing for continuously using the chemical liquid in the processing substrate are described. In the second embodiment, the first embodiment of the forming apparatus 10 is used. The treatment of two types of chemical liquids (first) having different reactivity to the crystal substrate as the substrate to be processed is treated. then, As described below, the first chemical liquid having higher reactivity with the wafer is used. Referring to Fig. 1 to Fig. 8 , the method of processing the wafer is substantially the same as the first embodiment. therefore, In the second embodiment, the above-described first embodiment will be described. the following, The description will be mainly made with reference to Figs. 1 to 8 which are referred to in the same embodiment of Figs. 9 to 12 . here, 9 to 12 are diagrams for explaining a substrate processing method, Substrate processing program, And program recording media. among them, Figure 9 is a diagram for explaining a substrate processing method & In the second embodiment, the substrate processing apparatus 10 (see Figs. 1 and 2) is used in the second embodiment. The liquid supply device 40 of the substrate processing apparatus 10 is a product that is stored as ammonia liquid (NH4OH) as a chemical liquid element. And fluorination with a high concentration of hydrogen fluoride (H F ): The second chemical liquid element source 62 that has been accumulated. As shown in Figure i: In the case of a single processing tank. In particular, the base circle described in the state is applied to the treated liquid and the second liquid, The treatment of the two types is described in the description of the ammonia water. The same part is omitted, Appropriately refer to the first embodiment, the second embodiment, the The second embodiment of the substrate is shown in Table 5, Figure 10 ~ Figure. The form has been explained, As shown in Figure 1, there are: According to the high concentration of 1 chemical liquid source hydrogen water as the liquid, The fifth opening/closing valve 55 of the switching granular structure -70-200847248 50 is connected to the first chemical liquid element source 61. The sixth on-off valve 56 is connected to the second chemical liquid element source 62. then, By opening the fifth on-off valve 5 5, The high-concentration ammonia water fed from the first chemical liquid element source 61 is mixed into the pure water fed from the pure water supply pipe 48, Aspiration water (first chemical liquid) having a desired concentration is generated as a treatment liquid. also, By opening the sixth on-off valve 5 6, The high-concentration hydrogen fluoride water fed from the second chemical liquid element source 62 is mixed into the pure water fed from the pure water supply pipe 48. Hydrogen fluoride water (second chemical liquid) having a desired concentration was produced as a treatment liquid. Secondly, A method of processing the wafer W according to the second embodiment will be mainly described with reference to Figs. 9 to 12 . here, The upper supply pipe 42 is shown in the column of the upper supply pipe of Fig. 9 from the upper side. 43, 44 supplied liquid. and, The liquid supplied from the lower supply pipe 41 in each process is shown in the column of the lower supply pipe of Fig. 9 . and, One of the liquids overflowing from the treatment tank 12 to the outer tank 15 in each of the works is shown in the column of the outer tank of Fig. 9 . also, The upper supply pipe of Fig. 9, The "DIW" shown in the column of the lower supply pipe and the outer tank means pure water. "NH3" means ammonia water, "HF" means hydrogen fluoride water. In addition, The processing method described below, As above, The first chemical liquid (ammonia water) having high reactivity with the wafer W is used, Two kinds of treatments such as treatment using a second chemical liquid (hydrogen fluoride water) having a lower reactivity with the wafer W than the first chemical liquid (ammonia water) are crystallized in the processing tank 1 2 of the substrate processing apparatus 10 Round W implementation. More specifically, The wafer W is sequentially subjected to etching treatment using hydrogen fluoride water (second chemical liquid) and subsequent washing treatment, And etching treatment using ammonia water (first chemical liquid) and subsequent washing treatment -71 - 200847248 and treatment using pure water, And a second etching treatment using hydrogen fluoride water and a subsequent washing treatment. the following, Describe each project. First, as shown in Fig. 9, the first project is to store pure water as a treatment liquid in the treatment tank ι2. in particular, The same as the first project of the substrate processing method according to the first embodiment described with reference to Fig. 3, Pure water is accumulated in the treatment tank 12. that is, According to the signal from the control device 18, The pure discharge water stored in the pure water source 64 by the drive discharge mechanism 65' is sent to the switching mechanism 50 in the pure water supply pipe 48. The pure water flowing in the pure water supply pipe 48 can be adjusted by the adjusting device 67 to adjust the concentration of the dissolved gas, The amount of air bubbles mixed, Temperature, etc. at this time, The fifth on-off valve 55 and the sixth on-off valve 56 of the switching mechanism 5 are based on signals from the control device 18. Is blocked. Therefore, in the pure water fed from the pure water supply pipe 48, The liquid chemical elements from the first chemical liquid element source 61 and the second chemical liquid element source 62 are not mixed. That is, pure water is supplied as a treatment liquid in the treatment tank 12. Further, at this time, the first to fourth on-off valves 5 1 of the switching mechanism 50 are switched. 5 2 ' 5 3 ' 5 4 is based on signals from the control device 18 All are open. therefore, The lower supply pipe 41 and the first to third upper supply pipes 42 are provided. All the supply pipes of 4 3 ' 4 4 supply pure water into the treatment tank 1 2 . and so, The amount of pure water that can be supplied per unit time (for example, 8 〇 1 / min or more) Set more. As a result, pure water can be efficiently accumulated in the treatment tank 1 2 in a short time. Next, the second project is to accommodate the wafer W in the first region i 2a of the processing tank 12. in particular, Similar to the second project of the substrate processing method according to the first embodiment described above, The wafer W is accommodated in the first region 丨 2 a of the processing tank 12 in the range of -72 to 200847248. that is, According to the signal from the control device 18, The lifting mechanism (not shown) lowers the holding member 20. at this time, The holding member 20 is a wafer W to be processed (for example, 50 sheets), and the wafer W of the plurality of sheets can be accommodated in the first region 1 2a of the processing tank 1 2 at the same time. It can be immersed in pure water accumulated in the treatment tank 1 2 . During the second project, The opening and closing state of the switching mechanism 40 and the operating state of the discharge mechanism 65 are maintained in the original state from the first project. therefore, The supply pipe 41 and the first to third upper supply pipes 42 can be supplied from the lower side. 43, All the supply pipes of 44 continue to supply pure water into the treatment tank 1 2 , Pure water will overflow from the treatment tank 12 to the outer tank 15. In addition, The first project and the second project can also be implemented in the reverse order. also, The first project and the second project can also be implemented in parallel. Secondly, The third project, As shown in Figure 9 and Figure 1, The lower supply pipe 41 and the first to third upper supply pipes 42 are provided. 43, 44, hydrogen fluoride water (second chemical liquid) is supplied to the treatment tank 12. in particular, The sixth opening and closing valve 56 of the switching mechanism 5 会 is opened. With this, A high concentration of hydrogen fluoride water from the second chemical liquid element source 62 can be mixed into the pure water fed from the pure water supply pipe 48. on the other hand, The opening and closing state other than the sixth opening/closing valve 56 of the switching mechanism 5 and the operating state of the discharge mechanism 65 are maintained in the original state from the first and second projects. the result, As shown in Figure , 'hydrogen fluoride water (the second chemical solution) that has been thinned to its concentration will act as a treatment solution. Through the lower supply pipe 41 and the first to third upper supply pipes 42, 43 , All the supply pipes of 44, At a given flow rate (for example, 8 〇 1/min or more) The table 1 region 1 2 a and the second region 1 2 b are supplied to the treatment tank 1 2 . -73- 200847248 So, Once the hydrogen fluoride water is supplied into the treatment tank 12, The liquid that has been accumulated in the treatment tank 12 so far will be substantially the same amount as the inflow of the hydrogen fluoride water to the treatment 12. It is discharged from the upper opening 12c of the treatment tank 12 to the outer tank 15 and goes off. the result, The water in the treatment tank 12 is replaced by hydrogen fluoride water (second chemical liquid). As above, The first to third upper supply pipes 4 2, 4 3, 4 4 is a second to fourth discharge member 7 2 that is connected to a pair, 7 3, 7 4. The supply pipe 42 is supplied from the first and third upper sides, 43, 44 hydrogen fluoride water is fed through the 2 to 4th discharge members 72, 73, 74, It is directly discharged into the first region 1 2 b of the processing tank 12. In this embodiment, Each pair of spitting members ’ 7 3, 7 4 is a pair of wall faces of the processing tank 12 in the opposite direction, It is configured symmetrically in a way that is versatile. also, Second to fourth discharge members 72, Each of the spouts 72a of 73 74, 73a' 74a is arranged so that pure water can be discharged between adjacent wafers W held by the protective member 20. therefore, From the opposite pairs of discharge members 72, 73, The hydrogen fluoride water discharged from the discharge member in the middle of 74 and the hydrogen fluoride water discharged from the other discharge member collide with each other in the gap between the wafer W and the wafer W. And, Second to fourth discharge members 72, 73, 74 is placed in a different position in the up and down direction. therefore, In the first region 12a of the processing tank 12 at least around the surface of the wafer W to be processed, The liquid accumulated in the treatment tank 1 2 is vigorously stirred. therefore, The hydrogen fluoride water supplied to at least the periphery of the wafer W to be processed in the processing tank 1 2 is immediately mixed with the liquid which is currently stored in the processing tank 1 2 at least around the wafer W to be processed. the result, Then, the groove is held in the 72nd direction of the first (the fluorine concentration of the internal fluorine/74-200847248) is maintained at the same level as the at least treated surrounding of the treatment tank 12, Going up while going up. that is, Once water is supplied to the wafer w in the first region 12a, Then etching the wafer W of hydrogen water, In this project, The uniformity of the treatment of the wafer W using the second chemical solution (hydrogen fluoride water) can be confirmed, In this embodiment, in this project, The hydrogen fluoride is supplied from the lower supply pipe 4 1 in the second region 1 2b of 12, as described above. The lower supply pipe 41 is a third discharge that is connected to a pair. The hydrogen fluoride water fed from the lower supply pipe 41 is passed through the first member 71. The second region 12b of the treatment tank 12 is discharged. In this implementation, The pair of first discharge members 7 1 are on the wall surface of the processing tank 12 facing each other. It is symmetrically arranged in such a way that it can be opposed. also, { , Each of the first discharge members 71 discharges hydrogen fluoride which is discharged obliquely downward, and the hydrogen fluoride water discharged from the discharge member 71 forms a symmetrical flow in the second region. therefore, Fluoride discharged from one of the first discharge members 71 The hydrogen fluoride water discharged from the other first discharge member 71 collides with each other in the central portion of the region 12b. The flow from the discharge direction of the first discharge member 71 is canceled. As a result, The flow of the chemical liquid along the specific direction in the second zone is canceled by the treatment tank 12 and the rectifying plate 28. And the pressure in the second region 12b can be raised one by one. the result, Approximately the same amount of liquid will pass through a plurality of through holes 29 of 28, respectively. The second region 12b flows into the first region in the vertical direction. Wafer W. Hydrogen fluoride 1 begins to fluorinate: in-plane protection. Dispose of the tank water. If the member 71 spits out a pair of configuration forms, the water in the 12b is substantially the same as the wall surface of the domain 1 2 b from the hydrogen water in the 12b, and the rectifying plate domain is 1 2 a -75- 200847248, that is, The hydrogen fluoride water supplied to the second region 1 2b flows into the first region 12a through the flow regulating plate 28' in a substantially uniform upward flow (and inflow) of the entire rectifying plate 28. Then, the entire flow of the liquid in the first region 12a is formed upward by the hydrogen fluoride water flowing into the second region 12a from the second region 12b. Therefore, the floating matter floating in the treatment tank 12, for example, the particles removed from the wafer w by the etching treatment can be floated upward in the treatment tank 12 and flowed out to the outer tank 15. Thereby, the floating matter (particles) can be prevented from adhering to the wafer W. Next, in the fourth project, as shown in Fig. 9 and Fig. 11, the wafer W is immersed in hydrogen fluoride water (second chemical liquid) while the hydrogen fluoride water (second chemical liquid) is supplied to the treatment tank 1 2 . Specifically, the opening and closing state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained in the original state from the third process. Therefore, the hydrogen fluoride water can be continuously supplied to the first region 1 2a and the second region 1 2b of the treatment tank 12 at a predetermined flow rate (for example, 801 /min or more). This project is for example implemented for a few minutes. In this project, as shown in Fig. 11, with the supply of new hydrogen fluoride water to the treatment tank 12, the hydrogen fluoride water accumulated so far in the treatment tank 12 will only be new to the treatment tank 12. The inflow amount of the hydrogen fluoride water is discharged to the outer tank 15 from the upper opening 1 2 c of the treatment tank 12 by the same amount. Further, as described above, the new hydrogen fluoride water is supplied into the treatment tank 1 2 so that the liquid can be stirred around at least the wafer W in the first region 1 2a of the treatment tank 12. Therefore, the newly supplied new hydrogen fluoride water is immediately mixed with the hydrogen fluoride water which has been accumulated in the treatment tank 12 so far. That is, the concentration of the hydrogen fluoride water is maintained constant around the circumference -76-200847248 of the wafer W to be processed disposed in the first region 1 2 a of the processing tank 12. As a result, the amount of etching in the process can be made substantially uniform in the plane of the surface of the wafer W to be processed. Further, in this process, similarly to the third process, hydrogen fluoride water is supplied from the lower supply pipe 41 in the second region 1 2b of the treatment tank 12. Then, as described above, the hydrogen fluoride water supplied to the second region 1 2b flows into the first region 1 2a through the flow regulating plate 28 to the substantially uniform upward flow (and inflow) of the entire rectifying plate 28 . As a result, the floating matter floating in the treatment tank 12 can be floated upward in the treatment tank 12 and flowed out to the outer tank 15. Thereby, it is possible to prevent floating matter (particles) from adhering to the wafer W. Next, as shown in FIG. 9 and FIG. 12, the fifth project supplies pure water to the treatment tank 1 2 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44, and the treatment tank 1 2 The hydrogen fluoride water will be replaced by pure water. Specifically, the sixth on-off valve 56 of the switching mechanism 50 is blocked based on the signal from the control signal 18. As a result, in the pure water fed from the pure water supply pipe 48, the mixing of the high-concentration hydrogen fluoride water from the second chemical liquid element source 62 is stopped. On the other hand, the opening and closing state of each of the opening and closing valves of the other switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained in the original state from the fourth project. As a result, as shown in FIG. 12, the pure water can be supplied to the treatment at a predetermined flow rate (for example, 80 1 /min or more) via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44. Slot 1 2. In this way, once the pure water is supplied into the treatment tank 12, the liquid accumulated in the treatment tank 12 so far will be substantially the same amount as the inflow amount of the pure water to the treatment tank 12, from the treatment. The upper opening 12c - 77 - 200847248 of the groove 12 is discharged to the outer tank 1 5 . As a result, the hydrogen fluoride water (second chemical liquid) in the treatment tank 1 2 is replaced by pure water. Further, when the hydrogen fluoride water is replaced with pure water around the wafer W in the first region 12a, the uranium engraving of the wafer W of the hydrogen fluoride water is completed. In the same manner as the supply of the hydrogen fluoride water in the third process, pure water is supplied from the first to third upper supply pipes 42, 43, and 44 to the first region 12a, whereby the liquid accumulated in the treatment tank 1 2 is intensely Stir. Therefore, the pure water supplied to the periphery of at least the processed wafer W in the processing tank 12 is immediately mixed with the liquid which is currently around the at least processed wafer W accumulated in the processing tank 12. As a result, the concentration of the hydrogen fluoride water is lowered while being kept uniform in the periphery of at least the processed wafer W in the processing tank 12. That is, in this process, the treatment using the hydrogen fluoride water (second chemical liquid) remaining in the treatment tank 12 can be performed substantially uniformly on the surface of the wafer W. In the same manner as the supply of the hydrogen fluoride water in the third process, the pure water is supplied from the lower supply pipe 41 to the second region 12b, whereby the entire liquid flow in the first region 12a can be directed upward. Therefore, the float floating in the treatment tank 12 can be floated upward in the treatment tank 12 and flowed out to the outer tank 15. Thereby, floating matter (particles) can be prevented from adhering to the wafer W. Further, in the fifth project, the same operational effects as those of the sixth project of the substrate processing method according to the first embodiment can be obtained. As described above, the concentration of hydrogen fluoride is substantially constant in the vicinity of the plate surface of the wafer W in the first region 1 2 a until the concentration is lowered from the third project to the fifth project. Therefore, from the third project to the period from the -78 to 200847248 5, the wafer W can be etched in a substantially uniform etching amount over the entire surface of the board. Further, the supply of the hydrogen fluoride water (second chemical liquid) to the treatment tank 12 is performed by the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44. Therefore, more supply of hydrogen fluoride water into the treatment tank 12 can be set, whereby the treatment using hydrogen fluoride water can be performed in a short time. Next, as shown in FIG. 9, in the sixth process, the ammonia water (first chemical liquid) is supplied to the second region 1 2b of the treatment tank 12 via the lower supply pipe 41, and the pure water in the treatment tank 1 2 is used. Ammonia water is replaced. Specifically, the pure water in the treatment tank 1 2 is replaced with ammonia water in the same manner as the third step of the substrate processing method according to the first embodiment described with reference to Fig. 4 . In other words, the ammonia water (first chemical liquid) is supplied from the lower supply pipe 41 to the second region 12b, and the ammonia water (first chemical liquid) flows into the first region 12a from the second region 12b via the flow regulating member 28. The upward flow is formed in the vicinity of at least the wafer W in the first region 12a, and the pure water in the treatment tank 12 is replaced by ammonia water (first chemical liquid). Then, in the sixth project, the same operational effects as those of the third process of the substrate processing method according to the first embodiment described with reference to Fig. 4 can be obtained. Therefore, the details of the processing contents of the sixth project and the effects obtained by the above are referred to the description of the first embodiment, and the overlapping description will be omitted. Next, as shown in Fig. 9, the 'seventh project' is to immerse the wafer W in ammonia water (first chemical liquid) while replenishing ammonia water (first chemical liquid) to the treatment tank 12'. Specifically, in the same manner as the fourth step of the substrate processing method according to the first embodiment described with reference to FIG. 5, the wafer W is immersed in -79-200847248 in ammonia water (first chemical liquid), and the wafer is processed. . In other words, the ammonia water (first chemical liquid) is continuously supplied from the lower supply pipe 41 to the second region 12b, and the ammonia water (the first chemical liquid) flows from the second region 12b to the first region 12a via the flow regulating member 28. The upward flow is formed in the vicinity of at least the wafer W in the first region 12a, and the wafer W is immersed in the ammonia water (first chemical liquid) to be processed. Then, in the seventh project, the same operational effects as those of the fourth step of the substrate processing method according to the first embodiment described with reference to Fig. 5 can be obtained. Therefore, the details of the processing contents of the seventh item and the effects obtained are referred to the above-described first embodiment, and the overlapping description will be omitted. Next, as shown in Fig. 9, in the eighth step, pure water is supplied to the second region 12b of the treatment tank 12 via the lower supply pipe 41, and the ammonia water in the treatment tank 1 2 is replaced by pure water. Specifically, similarly to the fifth step of the substrate processing method according to the first embodiment described with reference to Fig. 6, the ammonia water in the processing tank 1 is replaced with pure water, and the wafer W is subjected to a washing treatment. In other words, pure water is supplied from the lower supply pipe 41 to the second region 12b, and pure water flows from the second region 1 2b to the first region 1 2 a via the flow regulating member 28, while the first region 1 2 At least the vicinity of the wafer W in a forms an upward flow, and the ammonia water (first chemical liquid) in the treatment tank 1 2 is replaced by pure water. Then, in the eighth project, the same effects as those of the fifth project of the substrate processing method according to the first embodiment described with reference to Fig. 6 can be obtained. Therefore, the details of the processing contents of the eighth project and the effects obtained are referred to the above-described first embodiment, and the overlapping description will be omitted. -80-200847248 Next, as shown in Fig. 9, in the ninth item, pure water is continuously supplied to the treatment tank 12 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44. Specifically, in the same manner as the sixth process of the substrate processing method of the i-th embodiment described with reference to FIG. 7 , pure water is supplied to the treatment tank 1 2 , and the substrate is treated with pure water. That is, pure water is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and pure water is supplied from the lower supply pipe 41 to the second region 12b, and at least the wafer W in the first region 12a. The substrate is treated with pure water while stirring the liquid. Then, in the ninth item, the same operational effects as those of the sixth step of the substrate processing method according to the first embodiment described with reference to Fig. 7 can be obtained. Therefore, the details of the processing contents of the ninth item and the effects obtained are referred to in the above-described first embodiment, and the overlapping description will be omitted. As described above, the etching treatment using hydrogen fluoride water (the third and fourth works) and the subsequent washing treatment (the fifth project), the uranium engraving treatment using the ammonia water (the sixth and seventh works), and the subsequent washing treatment (8th project) and treatment with pure water (9th project) will be carried out. Then, as shown in Fig. 9, in the present embodiment, the etching treatment using the hydrogen fluoride water (the first and the first project) and the subsequent washing treatment (the twelfth project) are further performed. As shown in Fig. 9, the etching treatment using hydrogen fluoride water includes a process of replacing pure water with hydrogen fluoride water as the first one, and a process of immersing the wafer W in hydrogen fluoride water as the first one. Further, the washing treatment includes a process of replacing fluorinated -81 - 200847248 hydrogen with pure water as the second project. Among them, the tenth project can be the same as the third project which is described in detail with reference to Fig. 10 . Further, the eleventh item can be identical to the fourth item which is described in detail with reference to Fig. n. Further, the 12th project can be the same as the fifth project which is described in detail with reference to Fig. 12 . Therefore, the overlapping description will be omitted in the case of the first 弟 弟 弟 1 2 project. As a result, once the 12th project is completed, the member of the holding member 20 rises and the wafer W is discharged from the processing tank 2. A series of processes for the processed wafer W as described above are completed. According to the present embodiment as described above, when the wafer W is continuously subjected to a plurality of processes using different types of chemical liquids in the same processing tank i 2 , the processing tank 1 can be changed according to the type of the chemical liquid. The method of supplying the liquid medicine inside. Thereby, the wafer W can be processed by a method suitable for each chemical liquid. As a result, the processing of the plurality of wafers W can be performed in a short time, and the uniformity of the processing in the plane of the wafer W can be improved. Specifically, the first chemical liquid (ammonia water) is supplied into the processing tank 12 so that an upward flow can be formed around at least the processed wafer W in the processing tank. Therefore, during the period in which the first chemical liquid is supplied into the processing tank 12, the concentration of the first chemical liquid in the vicinity of the surface of the wafer W is connected to the wafer W by uniformly forming the upward flow in the processing tank 12. The flow of liquid near the deck can also be substantially uniform within the deck. As a result, the uniformity of the treatment using the first chemical liquid in the surface of the wafer W is greatly improved regardless of the type of the chemical liquid to be used. On the other hand, the second chemical liquid (hydrogen fluoride water) is supplied to the processing tank -82 - 200847248 1 2 so that the liquid can be stirred around at least the wafer W in the processing tank 1 2 . Therefore, while the second chemical liquid is supplied into the treatment tank 12, the concentration of the second chemical liquid in the vicinity of the plate surface of the wafer W can be set while setting the supply amount per unit time of the second chemical liquid. Stay in one. As a result, the treatment using the second chemical liquid can be performed in a short time while ensuring the uniformity of the processing in the surface of the wafer W. Therefore, according to the present embodiment, the processing of the wafer W can be performed in a short time, and the uniformity of the processing in the surface of the wafer W can be improved. Further, according to the present embodiment, the upward flow can be formed in the first region 1 2a, and the second wafer 1 2b in the processing tank 12 for storing the processing liquid (pure water) can be supplied while the wafer W to be processed is stored. 1 liquid (ammonia). Then, after the first chemical liquid (ammonia water) is replaced in the treatment tank 12, an upward flow is formed in the first region 12a, and water (pure water) is supplied to the second region 1 2b of the treatment tank 12. In either case, at least a large uniform flow of upwelling is formed around the wafer W being processed. Therefore, the uniformity of the treatment using the first chemical liquid (ammonia water) along the plate surface of the wafer W to be processed in the direction corresponding to the lateral direction when the processed wafer W is disposed in the processing tank 12 can be secured. Further, according to the present embodiment, in the vicinity of the wafer W to be processed, the treatment liquid (pure water) in the treatment tank 12 is slowly replaced by the first chemical liquid (ammonia water) from the lower side. . Similarly, in the vicinity of the wafer W to be processed, the first chemical liquid (ammonia water) in the treatment tank 12 is slowly replaced by water (pure water) from below. Therefore, in the board surface of the wafer W to be processed, when the wafer W to be processed is placed in the processing tank 12, the portion disposed above -83-200847248 and the portion disposed below are used. The timing at which the treatment of the chemical liquid (ammonia water) is substantially started and the timing at which the treatment of the first chemical liquid (ammonia water) is substantially completed is different, but the time during which the treatment of the first chemical liquid is substantially performed is substantially the same. Therefore, the uniformity of the processing of the surface of the wafer W to be processed in the direction corresponding to the vertical direction when the wafer W to be processed is disposed in the processing tank 12 can be ensured. Further, various modifications can be made to the second embodiment described above. For example, the modification of the first embodiment described above can be applied to the same portion as the first embodiment in the second embodiment. Hereinafter, an example of a modification of the second embodiment will be specifically described. In the second embodiment, in the process of treating with hydrogen fluoride water (the third and fourth works, and the tenth and eleventh works), the supply of hydrogen fluoride water from the lower supply pipe 4 1 to the treatment tank 1 2 is shown. In the second region 12b, the hydrogen fluoride water is supplied from the upper supply pipes 42, 43, and 44 to the first region 1 2 a of the treatment tank 12, but the invention is not limited thereto, and the pipes 42, 43, 44 may be supplied from the upper side. Hydrogen fluoride water is supplied to the first region of the treatment tank 12. Further, in the above-described embodiment, the hydrogen fluoride water is supplied from all of the upper supply pipes 42, 43, and 44 to the first region 12a of the treatment tank 12. However, the present invention is not limited thereto, and may be from the first to the third. One or both of the upper supply pipes 4 1, 42, 43 are supplied with hydrogen fluoride water. In the second embodiment, the process (the sixth and seventh works) using the ammonia water treatment and the process of replacing the pure water with the ammonia water (the eighth project) are shown only from the lower side supply pipe 41. The first chemical liquid (ammonia water) or pure water is supplied to the treatment tank 12, but is not limited thereto. Also, -84 - 200847248, the first chemical liquid or the pure water can be supplied from the lower supply pipe 41 to the inside of the processing tank 12, and at least one of the first to third upper supply pipes 42, 43 and 44 can be supplied in parallel. The supply tube supplies the first chemical liquid or pure water to the inside of the treatment 1 2 . The flow of the liquid in the first region 12a can be substantially uniform by the wafer W as long as it is dominated by the upward flow or at least in the periphery of the wafer W accommodated in the first region 12a. . In addition, in the second embodiment, the work (the fifth and twelfth works) in which the hydrogen fluoride is replaced by pure water, and the work (the ninth process) in which the pure water is used for the treatment (the ninth project) is displayed from all the supply pipes 41. 42, 42, 43 44 to supply the treatment liquid (pure water) to the treatment tank 12, but this is not the case. For example, the supply of pure water from the lower supply pipe 4 1 can also be stopped. Further, pure water may be supplied from one or both of the first to third upper supply pipes 41, 4 2, and 4 3 . At least the processing liquid is discharged around the wafer W received in the first region 1 2 a, and when the accumulated liquid is stirred around the wafer, the cleaning of the wafer W can be performed more surely. Further, the deposit can be removed from the wafer W with high removal efficiency. Further, in the second embodiment, the etching process using the first chemical liquid treatment as the ruthenium wafer using ammonia water and the etch processing using the second chemical treatment as the ruthenium wafer using hydrogen fluoride water are shown. For example, it is not limited thereto, and various changes can be made. For example, when the treatment using the first drug is a chemical solution having high reactivity with the substrate to be processed, the treatment using the second chemical solution is more to use the first chemical solution corresponding to the substrate to be processed. Low treatment of liquid medicine. In addition, it is also possible to treat the liquid at the medium volume W of the first chemical solution to the medium volume W and the liquid-to-liquid ratio -85-200847248 treatment, and it is necessary to manage the progress of the treatment with high precision. The treatment using the second chemical liquid is such that it is not necessary to manage the progress of the treatment with high precision. In this case, the first chemical solution and the second chemical liquid may be of the same type. Further, in the above-described embodiment, the wafer W is sequentially subjected to an etching treatment using hydrogen fluoride water and a subsequent washing treatment, an etching treatment using ammonia water, a subsequent washing treatment, a treatment using pure water, and the like. An etching treatment using hydrogen fluoride water twice and a subsequent washing treatment. However, of course, the processing performed on the wafer W is not limited to this example, and the treatment using the first chemical liquid and the processing using the second chemical liquid may be combined as appropriate. Further, in the second embodiment, the substrate processing apparatus 10 includes the ultrasonic generating device 30. However, the present invention is not limited to this example, and the ultrasonic generating device 30 is arbitrary. On the other hand, in each of the above-described substrate processing methods, for example, in any one of the above-described third to twelfth projects, ultrasonic waves can be generated from the ultrasonic wave generating device 30 in the processing tank 1 2 . The treatment solution inside. According to such a method, particles can be removed from the wafer W to be processed with high removal efficiency. Further, in the second embodiment, the flow regulating member 28 is constituted by a rectifying plate having a plurality of through holes 29. However, the present invention is not limited to this example, and various known rectifying members may be applied. Further, in order to form a uniform upward flow around the processed wafer W disposed in the first region 1 2 a of the processing tank 12, a supplementary rectifying plate may be provided in the second region 1213 of the processing tank 12. For example, it is possible to face the supply port of the liquid in the second region 1 2b via the lower supply pipe 41 (in the above embodiment, the discharge port 7 1 a of the first discharge member 7 1 ). The plate-shaped auxiliary rectification -86 - 200847248 plate "by this means that the flow along the supply direction of the liquid supplied through the lower supply pipe 4·1 can be canceled. Further, the lower supply pipe 4 1 flows the treatment liquid into the second region 12b of the treatment tank 12 via the first discharge member 71. However, the present invention is not limited thereto, and the first discharge member 71 may be omitted. Further, in the second embodiment, the processing liquid is supplied from the three positions which are different in the vertical direction to the first region 丨 2 a of the processing tank 12, but the invention is not limited thereto. It is also possible to supply the treatment liquid to the first region 1 2 a only from one or two positions in the up and down direction. Alternatively, the treatment liquid is supplied from the four or more positions in the vertical direction to the first region 1 2a. In addition, in the above description, the substrate processing apparatus and the substrate processing method are applied to the example in which a plurality of processes using different kinds of chemical liquids are continuously applied to the wafer W. However, the present invention is not limited to this example, and may be applied to The etching process and the washing process of the LCD substrate or the CD substrate are more applicable to various processes other than the etching process and the washing process. [Third Embodiment] Next, a third embodiment of a substrate processing apparatus, a substrate processing method, a substrate processing program, and a program recording medium according to the present invention will be described mainly with reference to Figs. 13 and 14. In the third embodiment, a description will be given of a treatment example in which one chemical liquid is selected from a plurality of different types of chemical liquids, and one selected chemical liquid is selectively applied to the substrate to be processed in a single processing tank. In the following third embodiment, the substrate processing apparatus 1 that is substantially the same as the apparatus described in the first embodiment is used, and the wafer-87-200847248 as the substrate to be processed is processed and processed. The treatment of one of the two types of chemical liquids (the first chemical liquid and the second chemical liquid) in which the reactivity of the substrate is different. Further, as described below, the treatment of the first chemical liquid having higher reactivity with the wafer in the two types of processing is described with reference to FIGS. 1 to 8 as the first embodiment. The method of processing the wafer is roughly the same. On the other hand, as described below, the treatment of the second chemical solution having lower reactivity with the wafer in the two types of processing is described in the second embodiment with reference to FIGS. 9 to 12 . The method of treating wafers by hydrogen fluoride water is substantially the same. Therefore, in the following description, the same portions as those in the first embodiment or the second embodiment will be omitted. In the following, the third embodiment will be described with reference to Figs. 1 to 1 and the first embodiment and Figs. 1 to 1 2 referred to in the first embodiment. Here, Fig. 13 and Fig. 14 are diagrams for explaining a third embodiment of the substrate processing apparatus, the substrate processing method, the substrate processing program, and the program recording medium. 13 is a table for explaining a substrate processing method when the first chemical solution is used, and FIG. 14 is a table for explaining a substrate processing method when the second chemical liquid is used. In the third embodiment, the substrate processing apparatus 10 (see Figs. 1 and 2) described in the first embodiment is used. Therefore, as shown in FIG. 1, the liquid supply device 40 of the substrate processing apparatus 10 has the first chemical liquid element source 6 1 accumulated as a chemical liquid element with a high concentration of ammonia water (NH 4 〇 H ), and is high. The hydrogen fluoride water having a concentration of hydrogen fluoride (HF) is used as a chemical liquid element to accumulate the second chemical liquid element source 62 of the animal. As shown in Fig. 1, the fifth opening and closing valve 55 that switches the grain structure 5 连结 is connected to the first chemical liquid element source 61, and the sixth to 88-200847248 opening and closing valve 56 is connected to the second chemical liquid element source 62. Then, by opening the fifth opening and closing valve 55, the high-concentration ammonia water fed from the first chemical liquid element source 61 is mixed into the pure water sent from the pure water supply pipe 48, and the desired concentration of ammonia water is generated. 1 liquid solution) as a treatment liquid. Further, by opening the sixth on-off valve 56, the high-concentration hydrogen fluoride water fed from the second chemical liquid source 62 can be mixed into the pure water sent from the pure water supply pipe 48 to generate a hydrogen fluoride water having a desired concentration. 2 liquid medicine) as a treatment liquid. Further, although not described in the first embodiment and the second embodiment, as shown in Fig. 1, the control device 18 of the substrate processing apparatus 10 further includes setting ammonia water (first chemical liquid) or hydrogen fluoride water. Which of the (second chemical liquid) is to be used to process the wafer W, and the operator to input which of the ammonia water or the hydrogen fluoride water to process the wafer W, for example, by a touch panel or the like The input device 19d is constructed. The setting of the setter 19c can be performed based on information input from the outside by the operator or the like on the input unit 19d. In addition, the setting of the setter 19c is not limited to the information from the input device 19d. For example, it can be performed based on information transmitted by remotely operating an autonomous computer or the like. The third embodiment is mainly described with reference to FIGS. 13 and 14. The processing method of the wafer W of the form. Here, the liquid supplied from the upper supply pipes 42, 43, 44 in each column is shown in the column of the upper supply pipe of Figs. 13 and 14. Further, the liquid supplied from the lower supply pipe 41 in each process is shown in the column of the lower supply pipe of Figs. 13 and 14. Further, one of the liquids overflowing from the treatment tank 12 to the outer tank 15 in each of the works is shown in the column of the outer tank of Figs. 13 and 14. In addition, the "DIW" shown in the upper supply pipe, the lower supply pipe, and the outer tank of Fig. 13 and Fig. 89-200847248 1 4 is a table of pure water, and "nh3" means ammonia water, "hf" It is not hydrogen fluoride water. In addition, as described above, the treatment method using the first chemical liquid (ammonia water) having high reactivity with the wafer w and the reactivity with the wafer w are more than the first chemical liquid (ammonia water). The two types of processing, such as the treatment of the low second chemical liquid (hydrogen fluoride water), are selectively performed on the wafer W in the processing tank 12 of the substrate processing apparatus 1 . The following describes each project. First, as shown in Fig. 13 and Fig. 14, the first item is a process of setting which of ammonia (first chemical liquid) and hydrogen fluoride water (second chemical liquid) is used for the crystal circle W. Specifically, the operator inputs the information on which of the ammonia water and the hydrogen fluoride water to process the wafer W by the input device 19d of the control device 18 constituted by a touch panel or the like. Next, as shown in Figs. 13 and 14, the second item ’ is based on the information input to the input device 19d, and the setting unit 19c performs setting for processing the wafer W by which of the ammonia water and the hydrogen fluoride water. As will be described below, depending on the chemical solution used, the method of processing the wafer W, and more specifically, the method of supplying the chemical liquid and the pure water into the processing tank 12 will be different. Hereinafter, a method of processing the wafer W by ammonia water (first chemical liquid) will be described first with reference mainly to Fig. 13 . Then, the processing method of treating the wafer W by hydrogen fluoride water (second chemical liquid) will be described mainly with reference to Fig. 14 .
如圖1 3所示，藉由氨水（第1藥液）來處理晶圓W -90- 200847248 的處理方法（第3工程〜第8工程）是與上述第1實施形 態中使用氨水來處理晶圓W的方法同樣。因此，在此僅 說明既略，參照上述第1實施形態的說明，省略重複的說 明。 首先，接續於設定藥液的工程之第3工程，是在處理 槽12內積蓄純水作爲處理液。其次，第4工程，是在處 理槽12的第1區域12a內收容晶圓W。具體而言，可與 一邊參照圖3 —邊說明過的第1實施形態之基板處理方法 的第1工程同樣，在處理槽1 2內積蓄純水，與第1實施 形態之基板處理方法的第2工程同樣’在處理槽1 2內配 置晶圓W。其結果，複數片的晶圓W可被收容於處理槽 1 2的第1區域1 2a內的同時’可浸漬於處理槽1 2內所積 蓄的純水中。 其次，如圖1 3所示’第5工程’是經由下側供給管 41來供給氨水（第1藥液）至處理槽12的第2區域12b ，處理槽1 2內的純水會被氨水置換而去。具體而言，與 一邊參照圖4 一邊說明過的第1實施形態之基板處理方法 的第3工程同樣，藉由氨水來置換處理槽1 2內的純水。 亦即，從下側供給管4 1供給氨水（第1藥液）至第2區 域1 2 b，經由整流構件2 8 ’使氨水（第1樂液）彳此第2區 域12b流入至第1區域12a’ 一邊在第1區域12a內的至 少晶圓W的附近形成上昇流，一邊藉由氣水（桌1樂液 )來置換處理槽12內的純水。然後’在該第5工程中’ 可取得與一邊參照圖4 一邊說明過的第1實施形態之基板 -91 - 200847248 處理方法的第3工程同樣的作用效果。 其次，如圖13所示，第6工程’是一邊補充氨水（ 第1藥液）至處理槽12，一邊將晶圓w浸漬於氨水（第 1藥液）中。具體而言’與一邊參照圖5 —邊說明的弟1 實施形態之基板處理方法的第4工程同樣，將晶圓W浸 漬於氨水（第1藥液）中，處理該晶圓w。亦即，從下側 供給管41持續供給氨水（第1藥液）至第2區域12b ’ 經由整流構件2 8，使氨水（第1藥液）從第2區域12 b 流入至第1區域12a，一邊在第1區域12a內的至少晶圓 W的附近形成上昇流，一邊將晶圓W浸漬於氨水（第1 藥液）中而進行處理。然後，在該第6工程中，可取得與 一邊參照圖5 —邊說明的第1實施形態之基板處理方法的 第4工程同樣的作用效果。 其次，如圖1 3所示，第7工程，是經由下側供給管 41來供給純水至處理槽1 2的第2區域1 2b，藉由純水來 置換處理槽12內的氨水。具體而言，與一邊參照圖6 — 邊說明的第1實施形態之基板處理方法的第5工程同樣’ 藉由純水來置換處理槽1 2內的氨水，對晶圓W實施洗滌 處理。亦即，從下側供給管41供給純水至第2區域12b ，而經由整流構件2 8，使純水從第2區域1 2b流入至第1 區域1 2 a，一邊在第1區域12 a內的至少晶圓W的附近 形成上昇流，一邊藉由純水來置換處理槽1 2內的氨水（ 第1藥液）。然後，在該第7工程中，可取得與一邊參照 圖6 —邊說明的第1實施形態之基板處理方法的第5工程 -92- 200847248 同樣的作用效果。 其次，如圖1 3所示’第8工程，是經由下側供給管 41及第1〜第3上側供給管42，4 3，44來供給純水至處 理槽12。具體而言，與一邊參照圖7 —邊說明的第1實 施形態之基板處理方法的第6工程同樣，對處理槽丨2供 給純水，而藉由純水來處理基板。亦即，從上側供給管 42，43，44供給純水至第1區域12a，且從下側供給管 41供給純水至第2區域12b，而一邊在第1區域i2a內的 至少晶圓W的附近使液體攪拌，一邊藉由純水來處理基 板。然後，該第8工程中，可取得與一邊參照圖7 一邊說 明的第1實施形態之基板處理方法的第6工程同樣的作用 效果。 如以上般，使用氨水的蝕刻處理（第5及第6工程） 及其後的洗滌處理（第7工程）、以及使用純水的處理（ 第8工程）會進行。 又，若根據如此的基板處理方法，則可在第1區域 1 2 a內形成上昇流，收容被處理晶圓W的同時對積蓄處理 液（純水）的處理槽12內的第2區域1 2 b供給第1藥液 (氨水）。並且，在處理槽12內藉由第1藥液（氨水） 置換後，在第1區域12a內形成上昇流，而將水（純水） 供給至處理槽1 2的第2區域1 2b。無論哪個情況皆是至 少在被處理晶圓W的周圍形成大槪均一的上昇流。医[此 ，可確保沿著相當於被處理晶圓W配置於處理槽1 2內時 的橫方向的方向之被處理晶圓W的板面之使用第1藥、液 -93- 200847248 (氨水）的處理的均一性。 又，若根據如此的基板處理方法，則在被處理晶圓W 的附近，處理槽12內的處理液（純水）是由下側慢慢地 藉由第1藥液（氨水）來置換而去。同樣，在被處理晶圓 W的附近，處理槽12內的第1藥液（氨水）是由下方慢 慢地藉由水（純水）來置換而去。因此，在被處理晶圓W 的板面中，在被處理晶圓W配置於處理槽1 2內時配置於 上方的部份與配置於下方的部份之間，雖利用第1藥液（ 氨水）的處理實質開始的時序及利用第1藥液（氨水）的 處理實質終了的時序不同，但可使實質進行第1藥液的處 理的時間大致形成相同。因此，可確保沿著相當於被處理 晶圓W配置於處理槽1 2內時的上下方向的方向之被處理 晶圓W的板面之處理的均一性。 其次，一邊主要參照圖1 4，一邊說明有關使用氟化 氫水（第2藥液）來處理晶圓W的情況。如圖14所示， 藉由氟化氫水（第2藥液）來處理晶圓w的處理方法（ 第3工程〜第7工程）是與在上述第2實施形態中使用氟 化氫水來處理晶圓W的方法相同。因此’在此僅說明既 略，參照上述第2實施形態的說明，省略重複的說明。 首先，接續於設定藥液的工程之第3工程’是在處理 槽12內積蓄純水作爲處理液。其次’第4工程’是在處 理槽12的第1區域12 a內收容晶圓W。其結果’複數片 的晶圓W可被收容於處理槽1 2的第1區域1 2a內的同時 ，可浸漬於處理槽1 2內所積蓄的純水中。另外，有關第 -94- 200847248 3工程及第4工程，作爲使用於晶圓W的處理之藥液’可 在使用第1藥液時及使用第2藥液時爲同樣。 其次，如圖14所示，第5工程，是經由下側供給管 41來供給氟化氫水（第2藥液）至處理槽12的第2區域 1 2b，藉由氟化氫水來置換處理槽1 2內的純水。具體而言 ，與一邊參照圖1 〇 —邊說明過的第2實施形態之基板處 理方法的第3工程同樣，藉由氟化氫水來置換處理槽1 2 內的純水。亦即，從上側供給管42，43，44供給氟化氫 水（第2藥液）至第1區域12a，且從下側供給管41供 給氟化氫水（第2藥液）至第2區域12b，一邊在第1區 域1 2a內的至少晶圓W的附近攪拌液體，一邊藉由氟化 氫水（第2藥液）來置換處理槽12內的純水。然後，在 該第5工程中，可取得與一邊參照圖1 〇 —邊說明的第2 實施形態之基板處理方法的第3工程同樣的作用效果。 其次，如圖14所示，第6工程，是一邊補充氟化氫 水（第2藥液）至處理槽12，一邊將晶圓W浸漬於氟化 氫水（第2藥液）中。具體而言，與一邊參照圖11 一邊 說明的第2實施形態之基板處理方法的第4工程同樣，將 晶圓W浸漬於氟化氫水（第2藥液）中，處理該晶圓W 。亦即，從上側供給管42，43，44供給氟化氫水（第2 藥液）至第1區域12a，且從下側供給管41供給氟化氫 水（第2藥液）至第2區域12b，一邊在第1區域i2a內 的至少晶圓W的附近攪拌液體’一邊將晶圓w浸漬於氟 化氫水（第2藥液）中而進行處理。然後，在該第6工程 -95- 200847248 中，可取得與一邊參照圖η —邊說明的第2實施形態之 基板處理方法的第4工程同樣的作用效果。 其次，如圖14所示，第7工程，是供給純水至處理 槽1 2，藉由純水來置換處理槽1 2內的氟化氫水。具體而 言，與一邊參照圖1 2 —邊說明的第2實施形態之基板處 理方法的第5工程同樣，藉由純水來置換處理槽1 2內的 氟化氫水，對晶圓W實施洗滌處理。亦即，從上側供給 管42，43，44供給純水至第1區域12a，且從下側供給 管41供給純水至第2區域12b，一邊在第1區域12a內 的至少晶圓W的附近攪拌液體，一邊藉由純水來置換處 理槽12內的氟化氫水（第2藥液）。然後，在該第7工 程中，可取得與一邊參照圖1 2 —邊說明的第2實施形態 之基板處理方法的第5工程同樣的作用效果。 如此，使用氟化氫水的鈾刻處理（第5及第6工程） 及其後的洗滌處理（第7工程）會被進行。以上一旦第7 工程終了，則保持構件2 0構件會上昇，晶圓W會從處理 槽1 2內排出。完成以上那樣對被處理晶圓W的一連串處 理。 若根據以上那樣的本實施形態，則從彼此相異種類的 藥液選擇一個藥液’在同一處理槽1 2內對晶圓W實施使 用該被選擇的藥液時，可按照藥液的種類來改變往處理槽 1 2內之藥液的供給方法。藉此，可用適於各藥液的方法 來處理晶圓W。其結果’可短時間進行對晶圓w之複數 的處理的同時，可使晶圓W的板面內之處理的均一性提 -96 - 200847248 升。 具體而言，以能夠在處理槽內的至少被處理晶 的周圍形成上昇流之方式，供給第1藥液（氨水）至 槽12內。因此，在第1藥液供給至處理槽12內的期 藉由均一形成處理槽1 2內的上昇流，不僅晶圓W的 附近之第1藥液的濃度，連晶圓W的板面附近之液 流動也可在板面內大致形成均一。其結果，不依所被 的藥液種類，使晶圓W的板面內之使用第1藥液的 的均一性大幅度提升。 另一方面，以能夠在處理槽1 2內的至少晶圓W 圍攪拌液體之方式供給第2藥液（氟化氫水）至處 1 2內。因此，在第2藥液供給至處理槽1 2內的期間 一邊設定更多第2藥液的每單位時間的供給量，一邊 圓W的板面附近之第2藥液的濃度大致保持於均一。 其結果、可一邊確保晶圓w的板面內之處理的 性’ 一邊以短時間來進行使用第2藥液的處理。 因此’若根據本實施形態，則可短時間進行對晶 的複數處理的同時，可使晶圓w的板面內之處理的 性提升。 另外’可對上述第3實施形態加諸各種的變更。 ’可將對上述第1實施形態的變形例適用於第3實施 中與第1實施形態同樣的部份。同樣，可將對上述第 施形悲的變形例適用於第3實施形態中與第2實施形 樣的部份。以下，具體說明對第3實施形態的變形之 圓 W 處理 間， 板面 體的 使用 處理 的周 理槽 ，可 使晶 均一 圓W 均一 例如 形態 2實 態同 一例 -97- 200847248 爲 工 第 氨 下 時 任 有 或 昇 液 水 給 由 第 但 4 3 液 在上述第3實施形態中，設定氨水（第1藥液）作 使用於晶圓W的處理之藥液時，在使用氨水來處理的 程（第5及第6工程）、及以純水來置換氨水的工程（ 7工程）中，是只由下側供給管41來供給第1藥液（ 水）或純水至處理槽1 2內，但並非限於此。亦可從由 側供給管4 1來供給第1藥液或純水至處理槽1 2內的同 ，並行由第1〜第3上側供給管42，43，44中的至少 何一個供給管來供給第1藥液或純水至處理槽1 2內。 關第1區域1 2a內之液體的流動，只要被上昇流支配， 至少在第1區域1 2a內所收容的晶圓W的周圍形成上 流，便可使晶圓W在其板面內大致均一地處理。 又，上述第3實施形態中，設定氟化氫水（第1藥 )作爲使用於晶圓W的處理之藥液時，在使用氟化氫 來處理的工程（第5及第6工程）中，是顯示由下側供 管41來供給氟化氫水至處理槽1 2的第2區域12b，且 上側供給管42，43，44來供給氟化氫水至處理槽12的 1區域1 2a之例，但並非限於此，亦可由上側供給管42 43 ’ 44來只往處理槽12的第1區域12a供給氟化氫水 又’上述實施形態中，是顯示由全部的上側供給管42 43，44供給氟化氫水至處理槽12的第1區域12a內， 並非限於此，亦可由第1〜第3上側供給管4 1，42， 的其中一個或二個來供給氟化氫水。 又’上述第3實施形態中，設定氟化氫水（第1藥 -98- 200847248 )作爲使用於晶圓W的處理之藥液時，在以純水來置 氟化氫水的工程（第7工程）中，是顯示由全部的供給 41，42，43，44來供給處理液（純水）至處理槽12內 例，但並非限於此。例如，亦可停止來自下側供給管 之純水的供給。又，亦可由第1〜第3上側供給管41， ，4 3的其中一個或二個來供給純水。至少在第1區域1 內所被收容的晶圓W周圍吐出處理液，且所被積蓄的 體在晶圓W的周圍被攪拌，則可更確實地進行對該晶 W的洗滌處理。並且，可從晶圓W以高除去效率來除 附著物。 又，上述第3實施形態中，是顯示將使用第1藥液 處理設爲使用氨水之矽晶圓的鈾刻處理，將使用第2藥 的處理設爲使用氟化氫水之矽晶圓的蝕刻處理之例，但 非限於此，亦可進行各種的變更。例如，將使用第1藥 的處理設爲使用與被處理基板的反應性較高的藥液之處 ，將使用第2藥液的處理設爲使用與被處理基板的應性 第1藥液更低的藥液之處理。又，亦可將使用第1藥液 處理設爲必須以高精度來管理處理的進行程度之處理， 使用第2藥液的處理設爲可不必以高精度來管理處理的 行程度之處理。 又，上述第3實施形態中，基板處理裝置1 〇是包 超音波發生裝置3 0，但並非限於此例，超音波發生裝 30爲任意。另一方面，在上述基板處理方法中的各工 、例如上述第3工程〜第1 2工程中的任一個以上的工 換 管 之 41 42 2a 液 圓 去 的 液 並 液 理 比 的 將 進 含 置 程 程 -99 - 200847248 中，可使超音波從超音波發生裝置3 0發生於處理槽1 2內 的處理液。若根據如此的方法，則可從被處理晶圓W以 高除去效率來除去粒子。 又’上述第3實施形態中，整流構件2 8是由具有多 數個貫通孔29的整流板所構成，但並非限於此例，亦可 適用各種公知的整流構件。並且，爲了在處理槽1 2的第 1區域1 2a內所配置的被處理晶圓W的周圍形成均一的上 昇流，亦可在處理槽1 2的第2區域12b內設置補助整流 板。例如，以能夠和經由下側供給管41之往第2區域 1 2b內的液體的供給口（在上述實施形態中是第1吐出構 件7 1的吐出口 7 1 a )對向之方式來設置板狀的補助整流 板，藉此可打消沿著經由下側供給管4 1來供給的液體的 供給方向之局處的流動。而且，從下側供給管4 1經由第 1吐出構件7 1來使處理液流入處理槽1 2的第2區域1 2b 內，但並非限於此，亦可省略第1吐出構件7 1。 又，上述第3實施形態中，從沿著鉛直方向之相異的 三個位置供給處理液至處理槽1 2的第1區域1 2a內，但 並非限於此例。亦可只從沿著上下方向之一個或二個的位 置供給處理液至第1區域1 2 a內。或，從沿著上下方向之 四個以上的位置供給處理液至第1區域1 2a內。 又，以上的說明中，是將基板處理裝置及基板處理方 法適用於從相異種類的藥液選擇一個藥液，而對晶圓W 實施使用該被選擇的藥液之處理，但並非限於此例，亦可 適用於對LCD基板或CD基板的蝕刻處理及洗滌處理，更 -100- 200847248 可適用於蝕刻處理及洗滌處理以外的各種處理。 【圖式簡單說明】 圖1是表示本發明之基板處理裝置的第1〜第3實施 形態的槪略構成圖。 圖2是沿著圖1的π-π線之剖面圖。 圖3是用以說明本發明之基板處理方法的第！〜第3 實施形態的圖。 圖4是用以說明本發明的基板處理方法的第1〜第3 實施形態的圖。 圖5是用以說明本發明的基板處理方法的第1〜第3 實施形態的圖。 圖6是用以說明本發明的基板處理方法的第1〜第3 實施形態的圖。 圖7是用以說明本發明的基板處理方法的第1〜第3 實施形態的圖。 圖8是用以說明本發明的基板處理方法的第1〜第3 實施形態的圖。 圖9是用以說明本發明的基板處理方法的第2實施形 態的表。 圖1 〇是用以說明本發明的基板處理方法的第2及第 3實施形態的圖。 圖1 1是用以說明本發明的基板處理方法的第2及第 3實施形態的圖。 -101 - 200847248 圖1 2是用以說明本發明的基板處理方法的第2及第 3實施形態的圖。 圖1 3是用以說明本發明的基板處理方法的第3實施 形態的表。 圖1 4是用以說明本發明的基板處理方法的第3實施 形態的表。 【主要元件符號說明】 1 〇 :基板處理裝置 1 2 :處理槽 12a :第1區域 12b :第2區域 12c :上方開口 1 3 :排出管 1 5 ;外槽 1 6 :排出管 16a :循環用配管 1 8 :控制裝置 19a :控制器 19b :記憶媒體 19c :設定器 19d :輸入器 2〇 :保持構件 • 22 :棒狀構件 -102- 200847248 24 :基部 2 8 :整流構件 2 9 :貫通孔 3 〇 :超音波發生裝置 3 2 :局頻驅動電源 34 :超音波振盪器 3 8 :振動子 40 :液供給設備 4 1 :下側供給管 42，43，44 :上側供給管 48 :純水供給管 5 〇 :切換機構 51、 52、 53、 54、 55、 56:開閉閥 61、62 :藥液要素源 64 :純水源 6 5 :吐出機構 67 :調整裝置 7 1、7 2、7 3、7 4 :吐出構件 71a、 72a、 73a、 74a ：吐出口 W :晶圓 -103-As shown in Fig. 13, the treatment method (the third to the eighth works) of processing the wafer W-90-200847248 by the ammonia water (the first chemical liquid) is to treat the crystal with the ammonia water in the first embodiment. The method of round W is the same. Therefore, only the description of the first embodiment will be omitted, and the overlapping description will be omitted. First, in the third project of the process of setting the chemical solution, pure water is stored in the treatment tank 12 as a treatment liquid. Next, in the fourth step, the wafer W is housed in the first region 12a of the processing tank 12. Specifically, in the same manner as the first step of the substrate processing method of the first embodiment described with reference to FIG. 3, the pure water is stored in the processing tank 12, and the substrate processing method according to the first embodiment is the same. In the 2nd process, the wafer W is disposed in the processing tank 12. As a result, the plurality of wafers W can be accommodated in the first region 1 2a of the treatment tank 12 while being immersed in the pure water accumulated in the treatment tank 1 2 . Next, the 'fifth work' shown in Fig. 13 is that the ammonia water (first chemical liquid) is supplied to the second region 12b of the treatment tank 12 via the lower supply pipe 41, and the pure water in the treatment tank 1 2 is contaminated with ammonia water. Replace it. Specifically, the pure water in the treatment tank 1 2 is replaced with ammonia water in the same manner as the third step of the substrate processing method according to the first embodiment described with reference to Fig. 4 . In other words, the ammonia water (first chemical liquid) is supplied from the lower supply pipe 41 to the second region 1 2 b, and the ammonia water (first liquid liquid) flows into the first region 12b via the flow regulating member 28' to the first region 12b. The region 12a' is formed with an upward flow in the vicinity of at least the wafer W in the first region 12a, and the pure water in the treatment tank 12 is replaced by the gas water (table 1 liquid). Then, in the fifth project, the same operational effects as those of the third project of the substrate-91 - 200847248 processing method of the first embodiment described with reference to Fig. 4 can be obtained. Next, as shown in Fig. 13, the sixth item is immersed in the ammonia water (first chemical liquid) while replenishing the ammonia water (first chemical liquid) to the treatment tank 12. Specifically, in the same manner as the fourth step of the substrate processing method of the first embodiment described with reference to Fig. 5, the wafer W is immersed in ammonia water (first chemical liquid) to process the wafer w. In other words, the ammonia water (first chemical liquid) is continuously supplied from the lower supply pipe 41 to the second region 12b'. The ammonia water (first chemical liquid) flows from the second region 12b to the first region 12a via the flow regulating member 28. The wafer W is immersed in ammonia water (first chemical liquid) and processed while forming an upward flow in the vicinity of at least the wafer W in the first region 12a. Then, in the sixth project, the same operational effects as those of the fourth step of the substrate processing method according to the first embodiment described with reference to Fig. 5 can be obtained. Next, as shown in Fig. 13, the seventh step is to supply pure water to the second region 1 2b of the treatment tank 12 via the lower supply pipe 41, and replace the ammonia water in the treatment tank 12 with pure water. Specifically, in the same manner as the fifth step of the substrate processing method according to the first embodiment described with reference to Fig. 6, the ammonia water in the processing tank 1 2 is replaced with pure water, and the wafer W is subjected to a washing treatment. In other words, pure water is supplied from the lower supply pipe 41 to the second region 12b, and pure water flows from the second region 1 2b to the first region 1 2 a via the flow regulating member 28, while the first region 12a is in the first region 12a. At least the vicinity of the wafer W in the inside forms an upward flow, and the ammonia water (first chemical liquid) in the treatment tank 1 2 is replaced by pure water. Then, in the seventh project, the same operational effects as those of the fifth project -92-200847248 of the substrate processing method according to the first embodiment described with reference to Fig. 6 can be obtained. Next, as shown in Fig. 13, the eighth project supplies pure water to the treatment tank 12 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43 and 44. Specifically, in the same manner as the sixth step of the substrate processing method according to the first embodiment described with reference to Fig. 7, the processing tank 2 is supplied with pure water, and the substrate is treated with pure water. That is, pure water is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and pure water is supplied from the lower supply pipe 41 to the second region 12b, and at least the wafer W in the first region i2a The substrate is treated with pure water while stirring the liquid. Then, in the eighth project, the same operational effects as those of the sixth project of the substrate processing method according to the first embodiment described with reference to Fig. 7 can be obtained. As described above, the etching treatment using the ammonia water (the fifth and sixth works) and the subsequent washing treatment (the seventh project) and the treatment using the pure water (the eighth project) are performed. Moreover, according to the substrate processing method, the upward flow can be formed in the first region 1 2 a, and the second region 1 in the processing tank 12 in which the processing liquid (pure water) is stored while the processed wafer W is stored can be formed. 2 b Supply the first chemical solution (ammonia water). Then, after the first chemical liquid (ammonia water) is replaced in the treatment tank 12, an upward flow is formed in the first region 12a, and water (pure water) is supplied to the second region 1 2b of the treatment tank 12. In either case, a large uniform flow of upwelling is formed at least around the wafer W being processed. [This is to ensure the use of the first drug, liquid-93-200847248 (ammonia water) along the plate surface of the wafer W to be processed in the direction corresponding to the lateral direction when the wafer W to be processed is disposed in the processing tank 12 Uniformity of processing. Further, according to the substrate processing method, the treatment liquid (pure water) in the treatment tank 12 is gradually replaced by the first chemical liquid (ammonia water) from the lower side in the vicinity of the wafer W to be processed. go with. Similarly, in the vicinity of the wafer W to be processed, the first chemical liquid (ammonia water) in the treatment tank 12 is slowly replaced by water (pure water) from below. Therefore, in the plate surface of the wafer W to be processed, when the wafer W to be processed is disposed in the processing tank 12, the portion disposed above and the portion disposed below are used, and the first chemical liquid is used ( The timing at which the treatment of the ammonia water is substantially started and the timing at which the treatment of the first chemical liquid (ammonia water) is substantially completed are different, but the time during which the treatment of the first chemical liquid is substantially performed can be substantially the same. Therefore, the uniformity of the processing of the surface of the wafer W to be processed in the direction corresponding to the vertical direction when the wafer W to be processed is disposed in the processing tank 12 can be secured. Next, the case where the wafer W is processed using hydrogen fluoride water (second chemical liquid) will be described mainly with reference to Fig. 14. As shown in FIG. 14, the processing method (the third to seventh works) of processing the wafer w by hydrogen fluoride water (second chemical liquid) is to treat the wafer W using hydrogen fluoride water in the second embodiment. The method is the same. Therefore, the description of the second embodiment will be omitted, and the description of the second embodiment will be omitted. First, in the third item of the process of setting the chemical solution, pure water is stored in the treatment tank 12 as a treatment liquid. Next, the 'fourth item' accommodates the wafer W in the first region 12a of the processing tank 12. As a result, the plurality of wafers W can be accommodated in the first region 12a of the treatment tank 12, and can be immersed in the pure water accumulated in the treatment tank 12. In addition, in the case of the -94-200847248 3 project and the fourth project, the chemical liquid used as the treatment for the wafer W can be the same when the first chemical liquid is used and when the second chemical liquid is used. Next, as shown in FIG. 14, in the fifth process, hydrogen fluoride water (second chemical liquid) is supplied to the second region 1 2b of the treatment tank 12 via the lower supply pipe 41, and the treatment tank 1 2 is replaced by hydrogen fluoride water. Pure water inside. Specifically, the pure water in the treatment tank 1 2 is replaced by hydrogen fluoride water in the same manner as the third step of the substrate processing method according to the second embodiment described with reference to Fig. 1 . In other words, hydrogen fluoride water (second chemical liquid) is supplied from the upper supply pipes 42, 43, and 44 to the first region 12a, and hydrogen fluoride water (second chemical liquid) is supplied from the lower supply pipe 41 to the second region 12b. The liquid is stirred in the vicinity of at least the wafer W in the first region 1 2a, and the pure water in the treatment tank 12 is replaced by hydrogen fluoride water (second chemical liquid). Then, in the fifth project, the same operational effects as those of the third project of the substrate processing method according to the second embodiment described with reference to Fig. 1 can be obtained. Next, as shown in Fig. 14, in the sixth aspect, the wafer W is immersed in hydrogen fluoride water (second chemical liquid) while supplementing the hydrogen fluoride water (second chemical liquid) to the treatment tank 12. Specifically, similarly to the fourth step of the substrate processing method according to the second embodiment described with reference to Fig. 11, the wafer W is immersed in hydrogen fluoride water (second chemical liquid) to process the wafer W. In other words, hydrogen fluoride water (second chemical liquid) is supplied from the upper supply pipes 42, 43, and 44 to the first region 12a, and hydrogen fluoride water (second chemical liquid) is supplied from the lower supply pipe 41 to the second region 12b. The liquid w is stirred in the vicinity of at least the wafer W in the first region i2a, and the wafer w is immersed in hydrogen fluoride water (second chemical liquid) to be processed. Then, in the sixth project -95-200847248, the same operational effects as those of the fourth step of the substrate processing method according to the second embodiment described with reference to Fig. η can be obtained. Next, as shown in Fig. 14, in the seventh step, pure water is supplied to the treatment tank 12, and the hydrogen fluoride water in the treatment tank 1 2 is replaced by pure water. Specifically, similarly to the fifth process of the substrate processing method according to the second embodiment described with reference to FIG. 12, the hydrogen fluoride water in the processing tank 1 is replaced with pure water, and the wafer W is subjected to washing treatment. . That is, the pure water is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and the pure water is supplied from the lower supply pipe 41 to the second region 12b, and at least the wafer W in the first region 12a is provided. The liquid is stirred in the vicinity, and the hydrogen fluoride water (second chemical liquid) in the treatment tank 12 is replaced by pure water. Then, in the seventh process, the same operational effects as those of the fifth process of the substrate processing method according to the second embodiment described with reference to Fig. 12 can be obtained. Thus, the uranium engraving treatment (the fifth and sixth works) using hydrogen fluoride water and the subsequent washing treatment (the seventh project) are carried out. Once the seventh project is completed, the holding member 20 member will rise and the wafer W will be discharged from the processing tank 12. A series of processes for the processed wafer W as described above are completed. According to the present embodiment as described above, when one selected chemical liquid is selected from the chemical liquids of different types, the selected chemical liquid can be applied to the wafer W in the same processing tank 12, and the type of the chemical liquid can be used. The method of supplying the chemical solution into the treatment tank 12 is changed. Thereby, the wafer W can be processed by a method suitable for each chemical liquid. As a result, the processing of the plurality of wafers w can be performed in a short time, and the uniformity of the processing in the surface of the wafer W can be increased by -96 - 200847248 liters. Specifically, the first chemical liquid (ammonia water) is supplied into the tank 12 so that an upward flow can be formed around at least the crystal to be treated in the treatment tank. Therefore, when the first chemical liquid is supplied into the treatment tank 12, the upward flow in the treatment tank 12 is uniformly formed, and not only the concentration of the first chemical liquid in the vicinity of the wafer W but also the vicinity of the surface of the wafer W The liquid flow can also be substantially uniform in the plane of the plate. As a result, the uniformity of using the first chemical liquid in the surface of the wafer W is greatly improved regardless of the type of the chemical liquid to be used. On the other hand, the second chemical liquid (hydrogen fluoride water) is supplied to the inside of the inside of the processing tank 12 so that at least the wafer W can be stirred. Therefore, while the supply amount of the second chemical liquid per unit time is set while the second chemical liquid is supplied into the treatment tank 12, the concentration of the second chemical liquid in the vicinity of the plate surface of the circle W is substantially maintained uniform. . As a result, the treatment using the second chemical liquid can be performed in a short time while ensuring the processing property in the surface of the wafer w. Therefore, according to the present embodiment, the complex processing of the crystal can be performed in a short time, and the processing property in the surface of the wafer w can be improved. Further, various changes can be made to the third embodiment described above. The modification of the first embodiment described above can be applied to the same portion as the first embodiment in the third embodiment. Similarly, the modification of the above-described first embodiment can be applied to the portions of the third embodiment and the second embodiment. Hereinafter, the circumferential groove of the treatment of the plate surface between the deformed circle W process of the third embodiment will be specifically described, and the crystal uniform circle W can be uniform, for example, the form 2 is the same as the case -97-200847248 In the case where the aqueous solution (the first chemical liquid) is used as the chemical liquid for the treatment of the wafer W in the third embodiment, the aqueous solution is treated with ammonia water. (5th and 6th projects) and the process of replacing ammonia water with pure water (7th project), the first chemical liquid (water) or pure water is supplied to the treatment tank 1 2 only by the lower supply pipe 41. , but not limited to this. The first chemical liquid or the pure water may be supplied from the side supply pipe 41 to the same in the processing tank 12, and at least one of the first to third upper supply pipes 42, 43, 44 may be supplied in parallel. The first chemical liquid or pure water is supplied to the treatment tank 1 2 . The flow of the liquid in the first region 1 2a is controlled by the upward flow, and at least the upper portion of the wafer W accommodated in the first region 1 2a is formed, so that the wafer W is substantially uniform in the plane of the wafer. Ground treatment. In addition, in the third embodiment, when hydrogen fluoride water (first drug) is used as the chemical liquid used for the treatment of the wafer W, it is displayed in the process (the fifth and sixth works) which is treated with hydrogen fluoride. The lower supply pipe 41 supplies hydrogen fluoride water to the second region 12b of the treatment tank 12, and the upper supply pipes 42, 43 and 44 supply hydrogen fluoride water to the first region 12a of the treatment tank 12, but the invention is not limited thereto. It is also possible to supply hydrogen fluoride water only to the first region 12a of the treatment tank 12 by the upper supply pipe 42 43 '44. In the above embodiment, the hydrogen fluoride water is supplied from all of the upper supply pipes 42 and 44 to the treatment tank 12. In the first region 12a, the present invention is not limited thereto, and hydrogen fluoride water may be supplied from one or both of the first to third upper supply pipes 4, 42. In the third embodiment, the hydrogen fluoride water (the first drug-98-200847248) is set as the chemical liquid used for the treatment of the wafer W, and the hydrogen fluoride water is placed in the pure water (the seventh project). This is an example in which the processing liquid (pure water) is supplied from all of the supplies 41, 42, 43, and 44 to the treatment tank 12, but is not limited thereto. For example, the supply of pure water from the lower supply pipe can also be stopped. Further, pure water may be supplied from one or both of the first to third upper supply pipes 41, and 43. At least the processing liquid is discharged around the wafer W accommodated in the first region 1, and the accumulated body is stirred around the wafer W, so that the washing treatment of the crystal W can be performed more surely. Further, the deposit can be removed from the wafer W with high removal efficiency. Further, in the third embodiment, the uranium engraving process using the first chemical liquid treatment as the ruthenium wafer using ammonia water is used, and the treatment using the second chemical is the etching treatment using the ruthenium wafer using hydrogen fluoride water. For example, it is not limited thereto, and various changes can be made. For example, when the treatment using the first drug is a chemical solution having high reactivity with the substrate to be processed, the treatment using the second chemical solution is more to use the first chemical solution corresponding to the substrate to be processed. Low treatment of liquid medicine. In addition, the treatment using the first chemical liquid is a process in which the degree of progress of the treatment must be managed with high precision, and the processing using the second chemical liquid is a process that can manage the degree of processing without high precision. Further, in the third embodiment, the substrate processing apparatus 1A is the ultrasonic wave generating device 30. However, the present invention is not limited to this example, and the ultrasonic generating device 30 is arbitrary. On the other hand, in the above-mentioned substrate processing method, for example, the liquid-to-liquid ratio of the liquid-to-liquid ratio of the liquid-changing unit of any one or more of the above-mentioned third to the first-two items will be included. In the process of -99 - 200847248, ultrasonic waves can be generated from the ultrasonic wave generating device 30 in the processing liquid in the processing tank 12. According to such a method, particles can be removed from the wafer W to be processed with high removal efficiency. Further, in the third embodiment, the flow regulating member 28 is constituted by a rectifying plate having a plurality of through holes 29. However, the present invention is not limited to this example, and various known rectifying members may be applied. Further, in order to form a uniform upward flow around the processed wafer W disposed in the first region 1 2a of the processing tank 12, a supplementary rectifying plate may be provided in the second region 12b of the processing tank 12. For example, it is possible to face the supply port of the liquid in the second region 1 2b via the lower supply pipe 41 (in the above embodiment, the discharge port 7 1 a of the first discharge member 7 1 ). The plate-shaped auxiliary rectifying plate can thereby cancel the flow along the supply direction of the liquid supplied through the lower supply pipe 41. Further, the lower supply pipe 4 1 flows the treatment liquid into the second region 1 2b of the treatment tank 1 2 via the first discharge member 71, but the present invention is not limited thereto, and the first discharge member 71 may be omitted. Further, in the third embodiment, the processing liquid is supplied from the three positions different in the vertical direction to the first region 12a of the treatment tank 12, but the invention is not limited thereto. It is also possible to supply the treatment liquid to the first region 1 2 a only from one or two positions in the up and down direction. Alternatively, the treatment liquid is supplied from the four or more positions in the vertical direction to the first region 1 2a. Further, in the above description, the substrate processing apparatus and the substrate processing method are applied to select one chemical liquid from a different type of chemical liquid, and the wafer W is subjected to the treatment using the selected chemical liquid, but the invention is not limited thereto. For example, it can also be applied to an etching process and a washing process for an LCD substrate or a CD substrate, and more preferably, it can be applied to various processes other than etching processing and washing processing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing first to third embodiments of a substrate processing apparatus according to the present invention. Figure 2 is a cross-sectional view taken along line π-π of Figure 1. Fig. 3 is a view for explaining the substrate processing method of the present invention! ~ Figure 3 of the third embodiment. Fig. 4 is a view for explaining first to third embodiments of the substrate processing method of the present invention. Fig. 5 is a view for explaining first to third embodiments of the substrate processing method of the present invention. Fig. 6 is a view for explaining first to third embodiments of the substrate processing method of the present invention. Fig. 7 is a view for explaining first to third embodiments of the substrate processing method of the present invention. Fig. 8 is a view for explaining first to third embodiments of the substrate processing method of the present invention. Fig. 9 is a table for explaining a second embodiment of the substrate processing method of the present invention. Fig. 1 is a view for explaining the second and third embodiments of the substrate processing method of the present invention. Fig. 11 is a view for explaining the second and third embodiments of the substrate processing method of the present invention. -101 - 200847248 Fig. 1 is a view for explaining the second and third embodiments of the substrate processing method of the present invention. Fig. 13 is a table for explaining a third embodiment of the substrate processing method of the present invention. Fig. 14 is a table for explaining a third embodiment of the substrate processing method of the present invention. [Description of main component symbols] 1 〇: substrate processing apparatus 1 2 : treatment tank 12a : first region 12b : second region 12 c : upper opening 1 3 : discharge pipe 1 5 ; outer groove 16 : discharge pipe 16a : for circulation Piping 1 8 : Control device 19a : Controller 19b : Memory medium 19c : Setter 19d : Input device 2 保持 : Holding member • 22 : Rod member - 102 - 200847248 24 : Base 2 8 : Rectifying member 2 9 : Through hole 3 〇: Ultrasonic wave generator 3 2 : Local frequency drive power supply 34 : Ultrasonic oscillator 3 8 : Vibrator 40 : Liquid supply device 4 1 : Lower side supply pipe 42 , 43 , 44 : Upper side supply pipe 48 : Pure water Supply pipe 5 切换: switching mechanisms 51, 52, 53, 54, 55, 56: opening and closing valves 61, 62: chemical liquid source 64: pure water source 6 5: discharge mechanism 67: adjusting device 7 1, 7, 2, 7 3 , 7 4 : ejection members 71a, 72a, 73a, 74a: discharge port W: wafer-103-