JP4842794B2 - Substrate processing apparatus, substrate processing method, substrate processing program, and program recording medium - Google Patents

Description

  The present invention relates to a substrate processing apparatus that performs a plurality of processes in one processing tank using two or more types of processing liquids on a substrate to be processed, and in particular, achieves uniformity of processing in the plate surface of the substrate to be processed. The present invention relates to a substrate processing apparatus that can be improved.

  The present invention also relates to a substrate processing method in which a plurality of processes are performed in a single processing tank using two or more types of processing liquids on a substrate to be processed, and in particular, the processing is uniform within the plate surface of the substrate to be processed. The present invention relates to a substrate processing method capable of improving the properties.

  Furthermore, the present invention is a substrate processing method for performing a plurality of processes in one processing tank using two or more kinds of processing liquids on a substrate to be processed, and processing uniformity within the plate surface of the substrate to be processed The present invention relates to a substrate processing program for executing a substrate processing method that can improve the quality of the substrate, and a program recording medium that records the substrate processing program.

  Conventionally, a substrate to be processed such as a semiconductor wafer or a glass substrate has been widely processed by being immersed in a processing solution. A substrate processing apparatus and a substrate processing method are known in which two or more kinds of processing liquids are sequentially supplied into one processing tank to perform a plurality of processes in the same processing tank (for example, Patent Documents 1 to 5). Reference 3).

  Patent Document 1 discloses an example in which a treatment using a chemical solution and a rinsing treatment using pure water performed thereafter are performed in the same tank. In this example, the substrate to be processed is processed while the substrate to be processed is immersed in the processing tank in which the chemical liquid is stored, and the chemical liquid is replenished so that a stirring flow is formed in the processing tank. According to such a method, the concentration of the chemical solution can be made uniform in the treatment tank. In the rinsing process, pure water is supplied into the processing tank so that a stirring flow is formed in the processing tank, and pure water is supplied into the processing tank so that an upward flow is formed in the processing tank. And the step of supplying to. According to such rinse treatment, the chemical solution in the treatment tank can be replaced with pure water, and the substrate to be treated can be rinsed evenly.

  Patent Document 2 discloses a processing method similar to the processing method described in Patent Document 1 described above (third embodiment of Patent Document 2). However, with regard to the rinsing process, a step of supplying pure water into the treatment tank so that a stirring flow is formed in the treatment tank, and a step of forming pure water in the treatment tank so as to form an upward flow in the treatment tank It is disclosed that any one of the steps of supplying to the substrate may be performed first (paragraph 0083 of Patent Document 2).

On the other hand, in Patent Document 3, the substrate to be processed is stored in a state where the processing liquid is stored in the processing tank and an upward flow is formed in the processing tank and the processing liquid is replenished in the processing tank. It arrange | positions in a processing tank and is processed. The configuration of Patent Document 3 can be applied to an apparatus that performs a plurality of types of processing, for example, an etching process and a water washing process in a single processing tank while sequentially supplying a plurality of types of processing liquids to the processing tank. It is disclosed that it is possible (paragraph 0030 of patent document 3).
JP-A-8-195372 JP 2001-274133 A Japanese Patent No. 3343033

  However, as disclosed in Patent Document 2 and Patent Document 3, pure water is supplied into the treatment tank so that an upward flow is formed in the treatment tank, and the chemical solution in the treatment tank is replaced with pure water. Then, as described in the column of [Problems to be solved by the invention] of Patent Document 1, when the substrate to be processed is arranged in the processing tank among the plate surfaces of the substrate to be processed. There is a possibility that the degree of processing varies between the upper part and the lower part.

  In addition, when the present inventors conducted extensive research, according to the method disclosed in Patent Document 1, it is possible to ensure the uniformity of processing within the plate surface of the substrate to be processed, depending on the type of chemical solution. It has been found that when a part of the chemical solution is used, the processing uniformity within the plate surface of the substrate to be processed is significantly reduced.

  That is, the present invention has been made in consideration of such points, and is a substrate processing apparatus and a substrate processing method for performing a plurality of processes using different processing liquids on a substrate to be processed in one processing tank. Then, it aims at providing the substrate processing apparatus and substrate processing method which can improve the uniformity of the process in the plate surface of a to-be-processed substrate. Further, the present invention is a substrate processing method for performing a plurality of processes in one processing tank using two or more kinds of processing liquids on a substrate to be processed, and processing uniformity within the plate surface of the substrate to be processed It is an object of the present invention to provide a substrate processing program for executing the substrate processing method capable of improving the above-described method and a program recording medium on which the substrate processing program is recorded.

  As a result of intensive research, the present inventors have conducted processing using a processing solution that has a significantly high reactivity with the substrate to be processed, for example, when etching a silicon wafer with ammonia water, The progress of processing on the plate surface can be influenced not only by the concentration of the processing liquid in the vicinity of the plate surface of the substrate to be processed, but also by the liquid flow of the processing solution in the vicinity of the plate surface of the substrate to be processed, for example, the flow velocity Obtained knowledge. As will be described below, the present case is to solve the above-described problems based on such knowledge.

  In the substrate processing method according to the present invention, the first flow of the treatment tank including a first region located above the flow straightening member and a second region located below the flow straightening member is provided. Placing the substrate to be processed in the region, immersing the substrate to be processed in the processing liquid stored in the processing tank; supplying a chemical to the second region of the processing tank; and The chemical solution is allowed to flow from the second region into the first region, and the processing solution in the processing tank is replaced with the chemical solution while forming an upward flow at least in the vicinity of the substrate to be processed in the first region. A step of supplying water to the second region of the treatment tank and flowing the water from the second region to the first region via the rectifying member, and at least the substrate to be treated in the first region. Forming upward flow in the vicinity of While, characterized in that it comprises the the steps of replacing the chemical liquid of the processing bath in the water.

  According to such a substrate processing method, the chemical solution is supplied into the processing tank such that an upward flow is formed in the processing tank in which the substrate to be processed is stored and the processing liquid is stored. Further, after the inside of the processing tank is replaced with the chemical solution, water is supplied into the processing tank so that an upward flow is formed in the processing tank. In any case, an upward flow is formed at least in the vicinity of the substrate to be processed. Therefore, by making the upward flow uniform, the liquid flow in the vicinity of the plate surface of the substrate to be processed can be made substantially uniform over the plate surface. As a result, the uniformity of processing within the plate surface of the substrate to be processed can be improved regardless of the type of liquid.

  Note that, according to such a substrate processing method, a substrate to be processed such as a silicon wafer can be processed substantially uniformly even when a chemical solution made of highly reactive ammonia water is used. The term “chemical solution comprising ammonia water” as used herein refers to an aqueous solution containing ammonia as a main component, and also includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is.

  Moreover, it is preferable that the process liquid substituted with a chemical | medical solution is water.

  In the substrate processing method according to the present invention, the supply amount per unit time of the chemical liquid supplied into the processing tank in the step of replacing the processing liquid in the processing tank with the chemical liquid is set in the processing tank. You may make it substantially the same as the supply amount per unit time of the said water supplied in the said processing tank in the process of substituting a chemical | medical solution with the said water. According to such a substrate processing method, the processing uniformity within the wafer plate surface, in particular, the processing within the wafer plate surface along the direction corresponding to the vertical direction when the wafer is placed in the processing tank. The uniformity can be further improved.

  Further, in the substrate processing method according to the present invention, the step of arranging the substrate to be processed in the first region of the processing tank is performed from the upper supply pipe connected to the first region of the processing tank to the first region. Supplying the processing liquid, supplying the processing liquid to the second region from a lower supply pipe connected to the second region of the processing tank, and storing the processing liquid in the processing tank You may make it have. According to such a substrate processing method, the inside of the processing tank can be quickly filled with the processing liquid. Thereby, the process of a to-be-processed substrate can be performed efficiently. Further, in such a substrate processing method, the step of arranging the substrate to be processed in the first region of the processing tank includes the substrate to be processed in the first region of the processing tank in which the processing liquid is stored. You may make it have the process of arrange | positioning. According to such a substrate processing method, the substrate to be processed can be stably immersed in the processing liquid.

  Furthermore, in the substrate processing method according to the present invention, the rectifying member includes a plurality of through holes and a rectifying plate that divides the inside of the processing tank into the first region and the second region, and supplies the rectifying member to the second region. The liquid that has been discharged may flow from the second region into the first region through the through hole of the current plate. According to such a substrate processing method, the upward flow having the uniformity in the horizontal direction is formed in the first region of the processing tank from the second region of the processing tank by the rectifying member having a simple configuration. Liquid can flow into one region.

  Further, the substrate processing method according to the present invention supplies the chemical solution to the second region of the processing tank and supplies the chemical solution after the step of supplying the chemical solution and replacing the processing liquid in the processing tank with the chemical solution. The chemical solution is allowed to flow from the second region to the first region via a member, and an upward flow is formed in the first region at least in the vicinity of the substrate to be processed. A step of immersing in the chemical solution may be further provided. According to such a substrate processing method, it is possible to adjust the degree of processing on the substrate to be processed while ensuring the uniformity of processing within the plate surface of the substrate to be processed.

  Further, in the substrate processing method according to the present invention, after the step of supplying the water and replacing the chemical in the processing tank with the water, water is supplied to the first region of the processing tank, A step of stirring the liquid in at least the vicinity of the substrate to be processed in one region may be further provided. According to such a substrate processing method, since the liquid is agitated in the vicinity of the substrate to be processed, the deposits attached to the plate surface of the substrate to be processed can be removed with a high removal rate. Further, in the step of supplying water in the substrate processing method and stirring the liquid in the first region in the processing tank, water is supplied to the first region of the processing tank, and the processing tank Water may be supplied to the second region. According to such a substrate processing method, the deposits removed from the substrate to be processed can be promoted to float upward in the processing tank. Thereby, it is possible to prevent the removed deposit from adhering to the substrate to be processed again.

  Furthermore, in at least one of the steps of the substrate processing method according to the present invention, ultrasonic waves may be generated in the liquid in the processing tank. According to such a substrate processing method, the deposits adhered to the plate surface of the substrate to be processed can be removed with a high removal rate.

  A substrate processing apparatus according to the present invention includes a processing tank including a first region that accommodates a substrate to be processed, and a second region disposed below the first region, and the first region in the processing tank; A rectifying member provided between the second region and a lower supply pipe connected to the second region of the treatment tank and capable of supplying at least a chemical solution and water into the second region of the treatment tank; A switching mechanism that is connected to the lower supply pipe and switches the supply of the liquid from the lower supply pipe; and is connected to the switching mechanism, and is connected to the second region of the processing tank from the lower supply pipe. A control device for controlling the supply of liquid, and the control device stores the processing liquid and supplies the chemical liquid to the second region of the processing tank containing the substrate to be processed and through the rectifying member. The chemical solution flows from the second region into the first region. The treatment liquid in the treatment tank is replaced with the chemical liquid while forming an upward flow at least in the vicinity of the substrate to be treated in the first area, and then water is supplied to the second area of the treatment tank. Supplying the water from the second region to the first region through the rectifying member, and forming an upward flow at least in the vicinity of the substrate to be processed in the first region. The switching mechanism is controlled so that the chemical solution is replaced with the water.

  According to such a substrate processing apparatus, the chemical solution is supplied into the processing tank such that an upward flow is formed in the processing tank in which the substrate to be processed is stored and the processing liquid is stored. Further, after the inside of the processing tank is replaced with the chemical solution, water is supplied into the processing tank so that an upward flow is formed in the processing tank. In any case, an upward flow is formed at least in the vicinity of the substrate to be processed. Therefore, by making the upward flow uniform, the liquid flow in the vicinity of the plate surface of the substrate to be processed can be made substantially uniform over the plate surface. As a result, the uniformity of processing within the plate surface of the substrate to be processed can be improved regardless of the type of liquid.

  Note that, according to such a substrate processing apparatus, a substrate to be processed such as a silicon wafer can be processed substantially uniformly even when a chemical solution made of ammonia water having strong reactivity is used. The term “chemical solution comprising ammonia water” as used herein refers to an aqueous solution containing ammonia as a main component, and also includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is. Moreover, it is preferable that the process liquid substituted with a chemical | medical solution is water.

  In the substrate processing apparatus according to the present invention, when the control device replaces the processing liquid in the processing tank with the chemical liquid, the supply amount per unit time of the chemical liquid supplied into the processing tank is When the chemical solution in the treatment tank is replaced with the water, the switching mechanism may be controlled so that the supply amount per unit time of the water supplied into the treatment tank is substantially the same. Good. According to such a substrate processing apparatus, the processing uniformity within the wafer plate surface, in particular, the processing within the wafer plate surface along the direction corresponding to the vertical direction when the wafer is placed in the processing tank. The uniformity can be further improved.

  In the substrate processing apparatus according to the present invention, the rectifying member includes a rectifying plate in which a plurality of through holes are formed, and the liquid supplied to the second region passes through the through holes of the rectifying plate, and You may make it flow in into the said 2nd area | region from 1 area | region. According to such a substrate processing apparatus, the upward flow having uniformity in the horizontal direction is formed in the first region of the processing tank from the second region of the processing tank by the rectifying member having a simple configuration. Liquid can flow into one region.

  Furthermore, the substrate processing apparatus according to the present invention further includes an upper supply pipe connected to the first region of the processing tank and capable of supplying a liquid into the first region of the processing tank, and the switching mechanism includes: The controller is connected to the upper supply pipe to switch the supply of liquid from the upper supply pipe, and the control device is connected to the upper supply pipe, and is connected to the first supply pipe from the upper supply pipe. You may make it control supply of the liquid in an area | region. According to such a substrate processing apparatus, the liquid can be directly supplied from the upper supply pipe to the substrate to be processed arranged in the first region. Thereby, a to-be-processed substrate can be processed appropriately.

  In addition, such a substrate processing apparatus further includes a plurality of discharge members provided in the first region of the processing tank so that the arrangement positions along the vertical direction are different from each other, and the upper supply pipe is The liquid may be discharged into the first region of the processing tank via the discharge member connected to the discharge member. Further, in such a substrate processing apparatus, the control device supplies the processing liquid from the upper supply pipe to the first region before supplying the chemical liquid from the lower supply pipe into the processing tank. The switching mechanism may be controlled so that the processing liquid is supplied from the lower supply pipe to the second region and the processing liquid is stored in the processing tank. According to such a substrate processing apparatus, the processing tank can be quickly filled with the processing liquid. Thereby, the process of a to-be-processed substrate can be performed efficiently.

  Furthermore, in such a substrate processing apparatus, the control device supplies water from the upper supply pipe to the first region after supplying water into the processing tank from the lower supply pipe, and The switching mechanism may be controlled so that the liquid is stirred at least in the vicinity of the substrate to be processed in one region. According to such a substrate processing apparatus, since the liquid is agitated in the vicinity of the substrate to be processed, the deposits attached to the plate surface of the substrate to be processed can be removed with a high removal rate. In such a substrate processing apparatus, the control device supplies water from the upper supply pipe to the first region when stirring the liquid in the first region in the processing tank, and The switching mechanism may be controlled so that water is supplied from the side supply pipe to the second region. According to such a substrate processing apparatus, it is possible to promote that the deposits removed from the substrate to be processed float up above the processing tank. Thereby, it is possible to prevent the removed deposit from adhering to the substrate to be processed again.

  Furthermore, in the substrate processing apparatus according to the present invention, the control device supplies the chemical liquid from the lower supply pipe and replaces the processing liquid in the processing tank with the chemical liquid, and then supplies the chemical liquid from the lower supply pipe. The chemical solution is continuously supplied to the second region, and the chemical solution is caused to flow from the second region to the first region via the rectifying member, and an upward flow is formed at least in the vicinity of the substrate to be processed in the first region. However, the switching mechanism may be controlled so that the substrate to be processed is immersed in the chemical solution in the processing tank. According to such a substrate processing apparatus, it is possible to adjust the degree of processing on the substrate to be processed while ensuring the uniformity of processing within the plate surface of the substrate to be processed.

  Furthermore, the substrate processing apparatus according to the present invention may further include an ultrasonic generator that generates ultrasonic waves in the liquid in the processing tank. According to such a substrate processing apparatus, it is possible to remove deposits attached to the plate surface of the substrate to be processed with a high removal rate.

  A program according to the present invention includes a processing tank including a first area for accommodating a substrate to be processed and a second area disposed below the first area, and the first area and the second area in the processing tank. A program that is executed by a control device that controls a substrate processing apparatus provided with a rectifying member provided between and in the first region of the processing tank by being executed by the control device The substrate to be processed is disposed, the step of immersing the substrate to be processed in the processing liquid stored in the processing tank, the chemical solution is supplied to the second region of the processing tank, and the second through the rectifying member. Replacing the processing liquid in the processing tank with the chemical liquid while flowing the chemical liquid from the area into the first area and forming an upward flow at least in the vicinity of the substrate to be processed in the first area; Before the treatment tank Water is supplied to the second region and the water is caused to flow from the second region to the first region via the rectifying member, and an upward flow is formed at least in the vicinity of the substrate to be processed in the first region. However, a substrate processing apparatus is made to perform the processing method of the to-be-processed substrate including the process of replacing the said chemical | medical solution in the said processing tank with the said water.

  The recording medium according to the present invention includes a processing tank that includes a first area that accommodates a substrate to be processed and a second area that is disposed below the first area, the first area in the processing tank, and the second area. A recording medium on which is recorded a program executed by a control device that controls a substrate processing apparatus provided with a rectifying member provided between the region and the program being executed by the control device The process substrate is disposed in the first region of the processing tank, the process substrate is immersed in the processing liquid stored in the processing tank, and the chemical solution is supplied to the second region of the processing tank. In addition, the chemical solution is allowed to flow from the second region to the first region via the rectifying member, and an upward flow is formed in the first region at least in the vicinity of the substrate to be processed. Treatment liquid And supplying water to the second region of the treatment tank and flowing the water from the second region to the first region via the rectifying member, and at least the first region in the first region A substrate processing apparatus, wherein the substrate processing apparatus includes a step of replacing the chemical in the processing tank with the water while forming an upward flow in the vicinity of the substrate to be processed. .

BEST MODE FOR CARRYING OUT THE INVENTION

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following embodiments, an example in which the present invention is applied to a silicon wafer (semiconductor wafer) etching process and a subsequent rinsing process will be described. However, the present invention is not limited to the application to the etching process and the subsequent rinsing process, and can be widely applied to the substrate processing.

  1 to 8 are diagrams for explaining an embodiment of a substrate processing apparatus, a substrate processing method, a substrate processing program, and a program recording medium according to the present invention. 1 is a diagram showing a schematic configuration of the substrate processing apparatus, FIG. 2 is a sectional view showing a section taken along line II-II in FIG. 1, and FIGS. 3 to 8 are shown in FIG. It is a figure for demonstrating the substrate processing method which can be performed using a substrate processing apparatus.

  As shown in FIG. 1, a substrate processing apparatus 10 according to the present embodiment includes a processing tank 12 that contains a wafer W, a liquid supply facility 40 that supplies a processing liquid into the processing tank 12, and a wafer to be processed (processed) A holding member (also called a wafer boat) 20 that holds a substrate (W) and a control device 18 that controls the operation of each component are provided. As shown in FIG. 1, a rectifying member 28 is provided in the processing tank 12. The flow regulating member 28 divides the inside of the processing tank 12 into a first region 12 a located above the flow straightening member 28 and a second region 12 b located below the straightening member.

  Such a substrate processing apparatus 10 sequentially supplies a plurality of types of processing liquids from the liquid supply facility 40 into the processing tank 12, and performs various processes on the wafers W accommodated in the processing tank 12. It is a device for going. In particular, in the present embodiment, as shown in FIG. 1, the substrate processing apparatus 10 further includes an ultrasonic generator 30 that can generate ultrasonic waves in the processing liquid stored in the processing tank 12. Yes. Therefore, according to the substrate processing apparatus 10 in the present embodiment, the wafer W accommodated in the processing tank 12 can be ultrasonically cleaned.

  Hereinafter, each component of the substrate processing apparatus will be described in further detail.

  First, the liquid supply equipment 40 will be described in detail. As shown in FIG. 1, the liquid supply facility 40 includes a lower supply pipe 41 connected to the second region 12 b of the processing tank 12, and first to third connected to the first region 12 a of the processing tank 12. The upper supply pipes 42, 43 and 44, and the lower supply pipe 41 and the pure water supply pipe 48 connected to the upper supply pipes 42, 43 and 44 are provided.

  The pure water supply pipe 48 is connected to a pure water source 64. The pure water supply pipe 48 is provided with a discharge mechanism 65. By operating the discharge mechanism 65, the processing liquid is supplied from the pure water supply pipe 48 to the lower supply pipe 41 and the upper supply pipes 42, 43, 44. As shown in FIG. 1, the lower supply pipe 41 and the upper supply pipes 42, 43, 44 and the pure water supply pipe 48 are connected via a switching mechanism 50. By operating this switching mechanism 50, the processing liquid from the pure water supply pipe 48 can be fed into only a desired supply pipe among the lower supply pipe 41 and the upper supply pipes 42, 43, 44. Become. Here, the “treatment liquid” is a liquid used for the treatment, and is a concept including not only pure water but also a chemical solution.

  Among these, the pure water source 64 and the discharge mechanism 65 will be described in detail first. The pure water source 64 can be configured by a known storage facility that can store pure water (DIW), such as a tank that stores the processing liquid. On the other hand, the discharge mechanism 65 can be configured from a known facility or device such as a pump. As a more specific example, an air-driven bellows pump that can adjust the discharge amount by adjusting the air pressure can be used as the discharge mechanism 65.

  As described above, the liquid supply facility 40 is connected to the control device 18. The discharge mechanism 65 is controlled by the control device 18. Specifically, the control device 18 controls the drive and stop of the discharge mechanism 65, the supply flow rate of the processing liquid when the discharge mechanism 65 is driven, and the like. When the discharge mechanism 65 is an air-driven bellows pump, the air pressure is controlled. When the discharge mechanism 65 is other than an air-driven bellows pump, for example, the amount of electric power to be input is controlled. Thus, the discharge amount of the pump when the discharge mechanism 65 is driven can be adjusted.

  Next, the switching mechanism 50 will be described in detail. As shown in FIG. 1, in the present embodiment, the switching mechanism 50 has first to sixth on-off valves 51, 52, 53, 54, 55, 56.

  Among these, the first opening / closing valve 51 is connected to the lower supply pipe 41. The second opening / closing valve 52 is connected to the first upper supply pipe 42. Further, the third opening / closing valve 53 is connected to the second upper supply pipe 43. Further, the fourth open / close valve 54 is connected to the third upper supply pipe 44. And the 1st thru | or 4th on-off valve 51-54 opens and closes the connection state (communication state) of the pure water supply pipe 48 and the supply pipe 41-44 connected with each valve 51-54. ing. That is, the supply of the processing liquid into the processing tank 12 through the supply pipes 41-44 can be controlled by opening / closing the open / close valves 51-54.

By the way, in this Embodiment, the liquid supply equipment 40 has the some chemical | medical solution element sources 61 and 62 which stored the different chemical | medical solution elements. In this liquid supply equipment 40, the chemical element supplied from the chemical element sources 61 and 62 and the pure water supplied from the pure water source 64 are mixed to produce a chemical liquid (treatment liquid) having a desired concentration. Can do. In the example shown in the figure, a first chemical element source 61 storing high concentration aqueous ammonia (NH ₄ OH) as a chemical element, and hydrogen fluoride water containing hydrogen fluoride (HF) at a high concentration as a chemical element. A stored second chemical element source 62 is provided.

  As shown in FIG. 1, the fifth open / close valve 55 of the switching mechanism 50 described above is connected to the first chemical element source 61, and the sixth open / close valve 56 is connected to the second chemical element source 62. Therefore, by opening the fifth open / close valve 55, the high-concentration ammonia water fed from the first chemical element source 61 is mixed into the pure water fed from the pure water supply pipe 48, so that the treatment liquid has a desired concentration. Ammonia water can be produced. Further, by opening the sixth open / close valve 56, the high-concentration hydrogen fluoride water fed from the second chemical element source 62 is mixed into the pure water fed from the pure water supply pipe 48, and a desired treatment liquid is obtained. A concentration of hydrogen fluoride water can be produced.

  The switching mechanism 50 is connected to the control device 18. The opening / closing operation and the opening degree of the first to sixth opening / closing valves 51-56 are controlled by the control device 18. Thereby, pure water or a chemical solution having a desired concentration can be supplied into the treatment tank 12 at a desired flow rate via each supply pipe 41-44.

  Note that such a configuration of the switching mechanism 50 is merely an example. A known facility, equipment, or the like that can supply a treatment liquid having a desired concentration into the treatment tank 12 at a desired flow rate via a desired supply pipe 41-44 can be used as the switching mechanism 50.

  Next, the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44 will be described in detail. As shown in FIG. 1, in the present embodiment, the liquid supply facility 40 is attached to the processing tank 12, and first to fourth discharge members 71, 72, 73, 74 that discharge the processing liquid into the processing tank 12. It has further. The ends of the supply pipes 41 to 44 are connected to first to fourth discharge members 71 to 74 that discharge the processing liquid into the processing tank 12.

  As shown in FIG. 1, each discharge member 71, 72, 73, 74 is attached to the processing tank 12 at four different vertical positions (vertical positions). Among these, the 1st discharge member 71 is arrange | positioned in the 2nd area | region 12b of the processing tank 12, and is connected with the lower side supply pipe | tube 41. FIG. The second discharge member 72 is disposed at the lowermost position in the first region 12 a of the processing tank 12 and is connected to the first upper supply pipe 42. Further, the third discharge member 73 is disposed at a position above the second discharge member 72 in the vertical direction (vertical direction) in the first region 12 a of the processing tank 12, and is connected to the second upper supply pipe 43. Has been. Further, the fourth discharge member 74 is disposed in an upper position in the vertical direction than the second discharge member 72 and the third discharge member 73 in the first region 12 a of the processing tank 12, and the third upper supply pipe 44. It is connected with.

  As shown in FIG. 1, the processing liquid discharged from the second discharge member 72 is mainly supplied around the lower region of the wafer W disposed in the first region 12 a of the processing tank 12. It becomes like this. Further, as shown in FIG. 1, the processing liquid discharged from the third discharge member 73 is mainly supplied around the central region of the wafer W disposed in the first region 12 a of the processing bath 12. It becomes like this. Further, as shown in FIG. 1, the processing liquid discharged from the fourth discharge member 74 is mainly supplied around the upper region of the wafer W arranged in the first region 12 a of the processing bath 12. It becomes like this.

  In FIG. 2, the fourth discharge member 74 is illustrated in a cross-sectional view of the processing tank 12. In the present embodiment, the first to fourth ejection members 71, 72, 73, 74 differ only in the arrangement position in the vertical direction, and the fourth ejection member 74 shown in FIG. Thru | or the 3rd discharge member 71,72,73, and the same structure. As shown in FIGS. 1 and 2, in this example, each of the discharge members 71, 72, 73, 74 is constituted by a pair of nozzles provided on the opposite side walls of the processing tank 12. The nozzle is formed as an elongated cylindrical member extending in the horizontal direction along the wall surface of the processing tank 12. The two cylindrical members constituting each discharge member 71, 72, 73, 74 are arranged at the same position in the vertical direction (see FIG. 1).

  One end of the cylindrical member forming the discharge members 71, 72, 73, 74 is closed, and the other end is connected to the corresponding supply pipes 41, 42, 43, 44. As shown in FIG. 2, each cylindrical member is provided with a large number of discharge ports 71a, 72a, 73a, and 74a arranged at regular intervals along the longitudinal direction thereof. The arrangement positions of the discharge ports 71a, 72a, 73a, and 74a are determined based on the arrangement positions of the processing target wafers W held by the holding member 20, as will be described later. In addition, it is preferable that the discharge direction from each discharge member 71,72,73,74 can be changed suitably.

  However, the configuration of the discharge members 71, 72, 73, 74 is merely an example, and a known member or the like can be used. Further, the discharge member may be omitted and each supply pipe 41-44 may be directly connected to the processing tank.

  By the way, as shown in FIG. 1, an adjustment device 67 that adjusts various conditions of the processing liquid flowing in the pure water supply pipe 48 may be interposed in the pure water supply pipe 48. As such an adjusting device 67, a gas concentration adjusting device for adjusting the dissolved gas concentration of the processing liquid, a bubble amount adjusting device for adjusting the amount of bubbles contained in the processing liquid, and a temperature adjustment for adjusting the temperature of the processing liquid. A device or the like can be selected.

  Next, the processing tank 12 that receives the processing liquid from the liquid supply equipment 40 as described above will be described in detail. The processing tank 12 has a substantially rectangular parallelepiped outline as shown in FIGS. 1 and 2. As will be described later, an upper opening 12c for taking in and out the wafer W is formed in the processing tank 12. A discharge pipe 13 for discharging the stored processing liquid is provided at the bottom of the processing tank 12 so as to be openable and closable.

  Moreover, as shown in FIG. 1, the outer tank 15 is provided so that the upper opening 12c of the process tank 12 may be surrounded. The outer tank 15 collects the processing liquid overflowing from the upper opening 12 c of the processing tank 12. Similarly to the processing tank 12, a discharge pipe 16 for discharging the collected processing liquid is also provided in the outer tank 15 so as to be openable and closable.

  Such a processing tank 12 and the outer tank 15 are formed using quartz etc. which were rich in chemical resistance, for example. The thickness of the bottom of the processing tank 12 is such that the type of material forming the processing tank 12 and the ultrasonic wave irradiated from the ultrasonic generator 30 can be transmitted through ultrasonic waves from the ultrasonic generator 30 described later. It is determined in consideration of the frequency of the sound wave.

  The processing liquid discharged from the discharge pipes 13 and 16 of the processing tank 12 and the outer tank 15 may be discarded as it is, or may be supplied again into the processing tank 12 through a filter or the like. . When the processing liquid collected in the outer tank 15 is reused, for example, as shown by a dotted line in FIG.

  Next, the rectifying member 28 disposed in the processing tank 12 will be described in detail. The rectifying member 28 is a member for adjusting the flow of the processing liquid flowing from the second region 12 b of the processing tank 12 to the first region 12 a and forming an upward flow in the first region 12 a in the processing tank 12. Here, the “upward flow” means a flow from the lower side to the upper side, and is not limited to a flow parallel to the vertical direction (vertical direction).

  As shown in FIGS. 1 and 2, in the present embodiment, the rectifying member 28 is made of a rectifying plate having a large number of through holes 29. The rectifying plate 28 is supported so that its plate surface is parallel to the horizontal plane. As shown in FIG. 2, a circular through hole 29 is formed on almost the entire surface of the rectifying plate 28 including the region immediately below the wafer W accommodated in the first region 12 a of the processing tank 12. In this example, the through holes 29 are regularly arranged on the rectifying plate 28. Therefore, according to such a rectifying plate 28, the upward flow passing along the vertical direction at a substantially uniform flow rate in each position on the virtual horizontal plane in the first region 12 a of the treatment tank 12 is supplied to the first flow of the treatment tank 12. It can be formed in the region 12a. That is, it is possible to form an upward flow along the vertical direction in which the speed variation due to the horizontal position is reduced over substantially the entire first region 12 a of the processing tank 12.

  The rectifying plate 28 can be formed of the same material as the processing tank 12. Moreover, the thickness of the rectifying plate 28 is the same as the thickness of the bottom portion of the processing tank 12 described above, and the type of material forming the rectifying plate 28 and the ultrasonic wave so that the ultrasonic wave from the ultrasonic generator 30 can be transmitted. The frequency is determined in consideration of the frequency of ultrasonic waves emitted from the generator 30.

  The rectifying member 28 having such a configuration is merely an example, and various known rectifying members can be used.

  Next, the holding member 20 that holds the wafer W will be described. As shown in FIGS. 1 and 2, the holding member 20 has four rod-shaped members 22 extending in a substantially horizontal direction and a base portion 24 that cantilever-supports the four rod-shaped members 22 from one side. . The rod-shaped member 22 supports a plurality of wafers W processed at one time, for example, 50 wafers W from below. For this reason, each rod-like member 22 is formed with grooves (not shown) arranged at regular intervals along the longitudinal direction. The wafer W engages with the groove, and the holding member is formed so that the plate surface of each wafer W is substantially perpendicular to the extending direction of the rod-like member, that is, the plate surface of each wafer W is along the vertical direction. 20 (see FIG. 1).

  Incidentally, as can be understood from FIG. 2, the arrangement pitch of the ejection ports 71 a to 74 a of the ejection members 71 to 74 described above is substantially the same as the arrangement pitch of the wafers W held by the holding member 20. In particular, the discharge ports 72 a, 73 a, 74 a of the second to fourth discharge members 72, 73, 74 that directly supply the processing liquid to the first region 12 a of the processing tank 12 are adjacent wafers held by the holding member 20. It is arranged so that the processing liquid can be discharged during W.

  On the other hand, the base 24 of the holding member 20 is connected to a lifting mechanism (not shown). By lowering the holding member 20 holding the wafer W by the lifting mechanism, the wafer W can be accommodated in the first region 12a of the processing tank 12, and the processing liquid stored in the processing tank 12 It is also possible to immerse the wafer W in the wafer.

  The lifting mechanism is connected to the control device 18. The control device 18 controls the accommodation of the wafer W in the first region 12 a of the processing tank 12 and the discharge of the wafer W from the first region 12 a of the processing tank 12.

  Next, the ultrasonic generator 30 will be described. As shown in FIG. 1, the ultrasonic generator 30 is connected to a vibrator 38 attached to the bottom outer surface of the processing tank 12, a high-frequency drive power supply 32 for driving the vibrator 38, and a high-frequency drive power supply 32. And an ultrasonic oscillator 34. In the present embodiment, a plurality of vibrators 38 are provided, and the vibrators 38 are arranged so as to partially occupy the outer surface of the bottom of the processing tank 12. As shown in FIG. 1, the ultrasonic generator 30 further includes a drive switching mechanism 36 connected to the ultrasonic oscillator 34 and each transducer 38. With this drive switching mechanism 36, it is possible to drive the plurality of vibrators 38 as a whole or to individually drive one or two or more vibrators 38.

  When the vibrator 38 is driven to vibrate, ultrasonic waves propagate to the processing liquid stored in the first region 12 a of the processing tank 12 through the bottom of the processing tank 12 and the rectifying member 28. Thereby, an ultrasonic wave is generated in the processing liquid in the processing tank 12. The ultrasonic generator 30 is connected to the control device 18 so that the application of ultrasonic waves to the processing liquid is controlled by the control device 18.

  Next, the control device 18 will be described. As described above, the control device 18 is connected to each component of the substrate processing apparatus 10 and controls the operation of each component. In the present embodiment, the control device 18 has a controller 19a composed of a CPU and a recording medium 19b connected to the controller 19a. The recording medium 19b stores a program for executing a processing method for the processing target wafer W, which will be described later, together with various setting data. The recording medium 19b can be composed of a memory such as a ROM or RAM, a disk-shaped recording medium such as a hard disk or a CD-ROM, and other known recording media.

  Next, a wafer W processing method that can be performed by the substrate processing apparatus 10 having such a configuration will be described mainly with reference to FIGS.

  First, as a first step, as shown in FIG. 3, pure water is stored in the treatment tank 12 as a treatment liquid. Specifically, the discharge mechanism 65 is driven by a signal from the control device 18, and pure water stored in the pure water source 64 is sent toward the switching mechanism 50 through the pure water supply pipe 48. The pure water flowing through the pure water supply pipe 48 is adjusted by the adjusting device 67 in terms of the dissolved gas concentration, the amount of mixed bubbles, the temperature, and the like. At this time, the fifth opening / closing valve 55 and the sixth opening / closing valve 56 of the switching mechanism 50 are closed based on a signal from the control device 18. Therefore, the chemical elements from the first chemical element source 61 and the second chemical element source 62 are not mixed in the pure water fed from the pure water supply pipe 48. That is, pure water is supplied into the treatment tank 12 as a treatment liquid.

  At this time, the first to fourth on-off valves 51, 52, 53, 54 of the switching mechanism 50 are all opened based on a signal from the control device 18. Therefore, pure water is supplied into the processing tank 12 from all of the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. For this reason, a large supply amount of pure water per unit time (for example, 40 to 90 l / min) can be set. As a result, pure water can be efficiently stored in the treatment tank 12 in a short time.

  Next, as a second step, the wafer W is accommodated in the first region 12 a of the processing tank 12. Specifically, an elevating mechanism (not shown) lowers the holding member 20 based on a signal from the control device 18. At this time, the holding member 20 holds a predetermined number (for example, 50) of wafers W to be processed. As a result, the plurality of wafers W are accommodated in the first region 12 a of the processing tank 12 and are immersed in the pure water stored in the processing tank 12.

  In addition, this 1st process and a 2nd process can also be implemented in reverse order. Moreover, you may make it implement a 1st process and a 2nd process in parallel.

  Next, as a third step, as shown in FIG. 4, ammonia water is supplied to the second region 12 b of the processing tank 12 through the lower supply pipe 41, and the pure water in the processing tank 12 is replaced by ammonia water. It will be replaced. Specifically, first, the output of the discharge mechanism 65 is reduced by a signal from the control signal 18. Further, the fifth opening / closing valve 55 of the switching mechanism 50 is opened. Thereby, the high concentration ammonia water from the 1st chemical | medical solution element source 61 comes to be mixed in the pure water sent from the pure water supply pipe 48. Further, the second to fourth on-off valves 72, 73, 74 are closed. As a result, as shown in FIG. 4, the ammonia water (chemical solution) diluted to a predetermined concentration is used as a processing liquid via the lower supply pipe 41 to the second region 12b of the processing tank 12 (for example, 40 to 40). 50 l / min).

  As described above, the lower supply pipe 41 is connected to the pair of first discharge members 71. The chemical solution fed from the lower supply pipe 41 is discharged to the second region 12 b of the processing tank 12 through the first discharge member 71. In this Embodiment, a pair of 1st discharge member 71 is symmetrically arrange | positioned so that it may oppose on a pair of wall surface of the process tank 12 which opposes. Moreover, as shown in FIG. 4, each 1st discharge member 71 discharges a chemical | medical solution toward diagonally downward, and the chemical | medical solution discharged from the different discharge member 71 forms a symmetrical flow in the 2nd area | region 12b.

  Therefore, the chemical liquid discharged from one first discharge member 71 and the chemical liquid discharged from the other first discharge member 71 collide with each other at the center of the second region 12b, and the liquid from the first discharge member 71 The flow along the discharge direction is canceled out. In this manner, the local chemical flow along the specific direction in the second region 12b is canceled out by the wall surface of the processing tank 12 and the rectifying plate 28, and the pressure in the second region 12b increases substantially uniformly. To come. As a result, substantially the same amount of chemical solution passes through each of the numerous through holes 29 of the rectifying plate 28 and flows from the second region 12b to the first region 12a along the vertical direction. That is, the inflow of the chemical liquid from the second region 12b into the first region 12a is performed substantially uniformly over substantially the entire region on the rectifying plate 28.

  As described above, an upward flow is formed in the first region 12a of the processing tank 12, and the pure water in the processing tank 12 is replaced by the chemical solution from the lower side of the processing tank 12. Further, as shown in FIG. 4, with the supply of the chemical solution into the treatment tank 12, the treatment liquid that has been stored in the treatment tank 12 until then is approximately the same amount as the inflow amount of the chemical liquid into the treatment tank 12, It is discharged from the upper opening 12 c of the processing tank 12 to the outer tank 15. That is, according to the present embodiment, the pure water in the treatment tank 12 can be efficiently replaced with the chemical solution (ammonia water), and the amount of the chemical solution required for the replacement can be saved.

  When ammonia water is supplied around the wafer W in the first region 12a, etching of the wafer W with ammonia water is started. As described above, according to the present embodiment, the chemical liquid flows into the first region 12a from substantially the entire region on the rectifying plate 28 substantially uniformly. Therefore, it is possible to ensure the uniformity of processing on the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.

  Further, as described above, the aqueous ammonia flowing into the first region 12a from the second region 12b causes the liquid flow in the first region 12a to move upward as a whole. Therefore, floating substances floating in the processing tank 12, for example, particles removed from the wafer W by the etching process can be lifted upward in the processing tank 12 and further flowed out to the outer tank 15. As a result, floating substances (particles) can be prevented from adhering to the wafer W.

  Next, as a fourth step, as shown in FIG. 5, the wafer W is immersed in the ammonia water (chemical solution) while replenishing the treatment tank 12 with the ammonia water (chemical solution). Specifically, the open / close state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from the third step described above. Accordingly, the ammonia water is continuously supplied to the second region 12b of the processing tank 12 at a predetermined flow rate (for example, 40 to 50 l / min). This step is carried out for several minutes, for example.

  During this process, an upward flow of the chemical solution is formed in the first region 12a of the processing tank 12. Further, as shown in FIG. 5, with the inflow of new ammonia water from the second region 12 b to the first region 12 a, the ammonia water that has been stored in the treatment tank 12 until then is newly added to the treatment tank 12. The same amount of ammonia water inflow is discharged from the upper opening 12 c of the treatment tank 12 to the outer tank 15. That is, not only the concentration of the ammonia water is kept constant around the wafer W to be processed disposed in the first region 12a of the processing tank 12, but also how the ammonia water flows on the plate surface of the wafer W to be processed. For example, the flow velocity is substantially uniform over the plate surface. Therefore, although the silicon wafer W to be processed has a sharp reactivity with respect to the ammonia water, the etching amount in this process can be made substantially uniform over the plate surface of the wafer W to be processed.

  Similar to the third step described above, the ammonia flow flowing from the second region 12b into the first region 12a causes the liquid flow in the first region 12a to move upward as a whole. Therefore, the floating substance floating in the treatment tank 12 can be lifted upward in the treatment tank 12 and further flowed out to the outer tank 15. As a result, floating substances (particles) can be prevented from adhering to the wafer W.

  Next, as a fifth step, as shown in FIG. 6, pure water is supplied to the second region 12b of the treatment tank 12 through the lower supply pipe 41, and the ammonia water in the treatment tank 12 is pure water. It will be replaced. Specifically, the fifth opening / closing valve 55 of the switching mechanism 50 is closed by a signal from the control signal 18. Thereby, mixing of the high concentration ammonia water from the 1st chemical | medical solution element source 61 with respect to the pure water sent from the pure water supply pipe 48 stops. On the other hand, the open / close state of each open / close valve of the other switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from the fourth step described above. As a result, pure water is supplied to the second region 12b of the processing tank 12 at a predetermined flow rate (for example, 40 to 50 l / min). That is, from the third step to the fifth step, the supply amount of the processing liquid supplied to the second region 12b of the processing tank 12 is substantially constant.

  As described above and as shown in FIG. 6, each first discharge member 71 discharges pure water obliquely downward, and the pure water discharged from different discharge members 71 is symmetrical in the second region 12b. To form a common flow. Accordingly, the pure water discharged from one of the first discharge members 71 and the pure water discharged from the other first discharge member 71 collide with each other at the central portion of the second region 12 b, and the first discharge member 71. The flow along the discharge direction from is canceled. In this way, the local pure water flow along the specific direction in the second region 12b is canceled out by the wall surface of the processing tank 12 and the current plate 28, and the pressure in the second region 12b is substantially uniform. To rise. As a result, substantially the same amount of pure water passes through each of the large number of through holes 29 of the rectifying plate 28 and flows from the second region 12b to the first region 12a along the vertical direction. That is, the inflow of pure water from the second region 12 b into the first region 12 a is performed substantially uniformly over substantially the entire region on the rectifying plate 28.

  As described above, an upward flow is formed in the first region 12a of the processing tank 12, and the ammonia water (chemical solution) in the processing tank 12 is replaced with pure water from the lower side of the processing tank 12. In addition, as shown in FIG. 4, with the supply of pure water into the treatment tank 12, the ammonia water that has been stored in the treatment tank 12 until then is substantially the same as the amount of pure water flowing into the treatment tank 12. Only from the upper opening 12 c of the processing tank 12 is discharged to the outer tank 15. That is, according to this Embodiment, the chemical | medical solution (ammonia water) in the processing tank 12 can be efficiently substituted with pure water.

  Similarly to the third and fourth steps described above, also in the fifth step, the entire liquid flow in the first region 12a is caused by the pure water flowing from the second region 12b to the first region 12a. As you go upwards. Therefore, the floating substance floating in the treatment tank 12 can be lifted upward in the treatment tank 12 and further flowed out to the outer tank 15. As a result, floating substances (particles) can be prevented from adhering to the wafer W.

  When the ammonia water is replaced with pure water around the wafer W in the first region 12a, the etching of the wafer W with the ammonia water is completed. As described above, according to the present embodiment, pure water flows from substantially the entire region on the rectifying plate 28 into the first region 12a substantially uniformly. Therefore, it is possible to ensure the uniformity of processing on the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.

  Further, an upward flow of ammonia water is always formed in the first region 12a of the processing tank 12 from the start to the end of etching of the wafer W with the ammonia water. Therefore, it is possible to ensure the uniformity of the etching amount with respect to the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.

  Further, as described above, the processing liquid (pure water) in the processing tank 12 (particularly around the wafer W to be processed) is gradually replaced by the chemical liquid (ammonia water) from the lower side. Similarly, as described above, the chemical solution (ammonia water) in the processing tank 12 (particularly around the wafer W to be processed) is gradually replaced with pure water from the lower side. Therefore, as shown in FIG. 8, the concentration of the chemical solution around the upper portion of the wafer W arranged in the first region 12a of the processing tank 12 (the dashed line in FIG. 8) and the chemical solution around the lower portion. The concentration (solid line in FIG. 8) is a fixed time after starting the supply of the chemical solution into the processing tank 12, and a fixed time after starting the supply of pure water into the processing tank 12. It takes a different value. That is, of the plate surface of the wafer W, the processing with the chemical solution is substantially started between the portion disposed above and the portion disposed below when the wafer W is disposed in the processing bath 12. And the timing at which the treatment with the chemical solution is substantially ended are different. However, the supply flow rate per unit time of the chemical solution into the second region 12b of the treatment tank 12 in the third step described above, and the unit of pure water into the second region 12b of the treatment tank 12 in the fifth step. By making the supply flow rate per hour substantially the same, the time during which the treatment with the chemical solution is substantially performed can be made substantially the same (see FIG. 8). Accordingly, it is possible to ensure the uniformity of processing on the plate surface of the wafer W along the direction corresponding to the vertical direction when the wafer W is arranged in the processing bath 12.

  Further, in the third to fifth steps in which the processing on the processing target wafer can proceed, a uniform upward flow of the chemical solution is formed around the plate surface of the processing target wafer W. That is, the flow of ammonia water on the plate surface of the wafer W to be processed, for example, the flow velocity is substantially uniform over the plate surface. Therefore, although the silicon wafer W to be processed has a sharp reactivity with respect to the ammonia water, the etching amount can be made substantially uniform over the plate surface of the wafer W to be processed.

  As described above, the wafer W can be etched with a substantially uniform etching amount over the entire region of the plate surface between the third step and the fifth step.

  Next, as a sixth step, as shown in FIG. 7, pure water is supplied to the treatment tank 12 through the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. Specifically, first, the output of the discharge mechanism 65 is increased by a signal from the control signal 18. Further, the second to fourth on-off valves 52, 53, and 54 of the switching mechanism 50 are opened. As a result, as shown in FIG. 7, pure water is supplied to the treatment tank 12 through the lower supply pipe 41 and the first to third upper supply pipes 42, 43, and 44 at a predetermined flow rate (for example, 80 l / min or more). Will be supplied.

  As described above, the first to third upper supply pipes 42, 43, 44 are connected to the pair of second to fourth discharge members 72, 73, 74, respectively. The pure water fed from the first to third upper supply pipes 42, 43, 44 is directly discharged into the first region 12a of the processing tank 12 through the second to fourth discharge members 72, 73, 74. . In the present embodiment, each pair of ejection members 72, 73, 74 is symmetrically disposed on the pair of wall surfaces of the opposing treatment tank 12 so as to face each other. Further, the discharge ports 72 a, 73 a, 74 a of the second to fourth discharge members 72, 73, 74 can discharge pure water between adjacent wafers W held by the holding member 20. It is arranged.

  Therefore, the pure water discharged from one discharge member of each pair of discharge members 72, 73, 74 facing each other and the pure water discharged from the other discharge member are between the wafer W and the wafer W. Collide in the gap. The second to fourth ejection members 72, 73, and 74 are arranged at different vertical positions. For this reason, the liquid (pure water) stored in the processing bath 12 is vigorously stirred in the first region 12a of the processing bath 12 (at least around the plate surface of the wafer W to be processed). As a result, the chemical solution of the ion level that has stayed around the wafer W can be reliably washed away from the periphery of the wafer W. Further, the deposits (particles) adhering to the wafer W can be removed from the wafer W.

  In the present embodiment, pure water is also supplied from the lower supply pipe 41 into the second region 12 b of the treatment tank 12. As described above, the pure water supplied to the second region 12b passes through the rectifying plate 28 and flows into the first region 12a as a substantially uniform upward flow (translational flow) over the entire surface of the rectifying plate 28. Then, the pure water flowing into the first region 12a from the second region 12b causes the liquid flow in the first region 12a to be directed upward as a whole. Therefore, the chemical solution remaining around the wafer W and the deposits removed from the wafer W can be lifted upward in the processing tank 12 and further flowed out to the outer tank 15. Thus, the rinsing process of the wafer W can be performed more reliably, and the removed deposit can be prevented from adhering to the wafer W again.

  Such a sixth step is performed for several minutes, for example. When the sixth step is completed, the holding member 20 is raised, and the wafer W is discharged from the processing tank 12. As described above, a series of processes on the processing target wafer W is completed.

  According to the present embodiment as described above, an upward flow is formed in the first region 12a so as to accommodate the wafer W to be processed and store the processing liquid (pure water) in the processing tank 12. A chemical (ammonia water) is supplied to the second region 12b. Moreover, after the inside of the processing tank 12 is replaced with the chemical solution, pure water is supplied to the second area 12 b of the processing tank 12 so that an upward flow is formed in the first area 12 a. In any case, a substantially uniform upward flow is formed at least around the wafer W to be processed. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the processing target wafer W along the direction corresponding to the horizontal direction when the processing target wafer W is arranged in the processing tank 12.

  Further, in the vicinity of the wafer W to be processed, the processing liquid in the processing tank 12 is gradually replaced by the chemical liquid from the lower side. Similarly, in the vicinity of the wafer W to be processed, the chemical solution in the processing tank 12 is gradually replaced with water from below. Therefore, among the plate surfaces of the wafer W to be processed, the processing with the chemical is substantially performed between the portion disposed above and the portion disposed below when the wafer W to be processed is disposed in the processing bath 12. Although the timing at which the treatment with the chemical solution is started and the timing at which the treatment with the chemical solution is substantially ended are different, the time during which the treatment with the chemical solution is substantially performed can be made substantially the same. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the wafer W to be processed along the direction corresponding to the vertical direction when the wafer W to be processed is arranged in the processing bath 12.

  Furthermore, an upward flow of the chemical solution is formed at least around the processing target wafer W disposed in the first region 12a of the processing bath 12. Therefore, not only the concentration of the chemical solution is kept constant, but also the manner in which the chemical solution flows on the plate surface of the processing target wafer W, for example, the flow velocity is substantially uniform over the plate surface. For this reason, the uniformity of processing on the plate surface of the wafer W to be processed can be ensured without depending on the type of the chemical used.

  Thus, according to the present embodiment, the wafer W to be processed can be processed while ensuring the uniformity of the degree of processing within the plate surface, regardless of the type of chemical solution used.

  Various modifications can be made to the above-described embodiment. For example, in the above-described embodiment, when the processing liquid (pure water) stored in the processing tank 12 is replaced with the chemical liquid (ammonia water), the chemical liquid is supplied into the processing tank 12 only from the lower supply pipe 41. In this example, when the chemical solution (ammonia water) stored in the processing tank 12 is replaced with pure water, pure water is supplied into the processing tank 12 only from the lower supply pipe 41. Not limited. While supplying a chemical | medical solution or a pure water from the lower side supply pipe | tube 41 in the processing tank 12, in parallel with at least any one of the 1st thru | or 3rd upper side supply pipes 42,43,44, a processing tank A chemical solution or pure water may be supplied into the inside 12. If the upward flow is dominant in the flow of the liquid in the first region 12a, or if at least the upward flow is formed around the wafer W accommodated in the first region 12a, the wafer W Can be processed substantially uniformly over the plate surface.

  In the above-described embodiment, the example in which the processing liquid (pure water) is supplied into the processing tank 12 from all the supply pipes 41, 42, 43, and 44 during the sixth step is shown. Not limited. For example, the supply of pure water from the lower supply pipe 41 may be stopped. Further, pure water may be supplied from one or two of the first to third upper supply pipes 41, 42, 43. If the processing liquid is discharged at least around the wafer W accommodated in the first region 12a and the stored liquid is stirred around the wafer W, the rinsing process for the wafer W can be performed more reliably. it can. Moreover, the deposits can be removed from the wafer W with high removal efficiency.

  Furthermore, although the example which uses ammonia water as a chemical | medical solution was shown in embodiment mentioned above, it is not restricted to this, Various liquids can be used as a chemical | medical solution. As described above, the wafer W to be processed can be processed substantially uniformly within the plate surface regardless of the type of chemical solution.

  Furthermore, although the example which the substrate processing apparatus 10 contains the ultrasonic generator 30 was shown in embodiment mentioned above, it is not restricted to this, The ultrasonic generator 30 is arbitrary. On the other hand, each step in the above-described substrate processing method, for example, the above-described third step (replacement of the treatment liquid with a chemical solution), the fourth step (immersion of the wafer W in the chemical solution), and the fifth step (pure) In the replacement of the chemical with water), ultrasonic waves may be generated from the ultrasonic generator 30 to the processing liquid in the processing tank 12. According to such a method, particles can be removed from the wafer W to be processed with high removal efficiency.

  Furthermore, although the example which the rectifying member 28 consists of a rectifying plate which has many through-holes 29 was shown in embodiment mentioned above, it is not restricted to this, Various well-known rectifying members can be applied. Further, in order to form a uniform upward flow around the wafer W to be processed arranged in the first region 12 a of the processing tank 12, an auxiliary rectifying plate may be provided in the second region 12 b of the processing tank 12. Good. For example, a plate-like auxiliary is provided so as to face the liquid supply port (the discharge port 71a of the first discharge member 71 in the above-described embodiment) into the second region 12b via the lower supply pipe 41. By providing the current plate, the local flow along the supply direction of the liquid supplied via the lower supply pipe 41 can be canceled. Moreover, although the example which the process liquid flows in into the 2nd area | region 12b of the processing tank 12 via the 1st discharge member 71 from the lower side supply pipe 41 was shown, it is not restricted to this, The 1st discharge member 71 is abbreviate | omitted. You can also.

  Furthermore, in the above-described embodiment, the example in which the processing liquid is supplied into the first region 12a of the processing tank 12 from three different positions along the vertical direction has been described, but the present invention is not limited thereto. The processing liquid may be supplied into the first region 12a only from one or two positions along the vertical direction. Alternatively, the processing liquid may be supplied into the first region 12a from four or more positions along the vertical direction.

  In the above description, the example in which the substrate processing apparatus and the substrate processing method are applied to the etching process and the rinsing process for the wafer W is shown. However, the present invention is not limited to this. The present invention can be applied to the rinsing process, and can also be applied to various processes other than the etching process and the rinsing process.

FIG. 1 is a diagram showing a schematic configuration of an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a cross-sectional view taken along the line II-II in FIG. FIG. 3 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 4 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 5 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 6 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 7 is a view for explaining an embodiment of the substrate processing method according to the present invention. FIG. 8 is a view for explaining an embodiment of the substrate processing method according to the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 12 Processing tank 18 Control apparatus 19b Recording medium 28 Rectifying member (rectifying plate)
29 Through-hole 30 Ultrasonic generator 41 Lower supply pipe 42 First upper supply pipe 43 Second upper supply pipe 44 Third upper supply pipe 50 Switching mechanism W Substrate

Claims (25)

A rectifying member is provided inside, and a substrate to be processed is disposed in the first region of a processing tank including a first region located above the rectifying member and a second region located below the rectifying member. And immersing the substrate to be processed in the processing liquid stored in the processing tank;
The chemical solution is supplied to the second region of the treatment tank and the chemical solution is caused to flow from the second region to the first region via the rectifying member, and at least in the vicinity of the substrate to be treated in the first region. Replacing the treatment liquid in the treatment tank with the chemical solution while forming an upward flow;
Supplying water to the second region of the processing tank and flowing the water from the second region to the first region via the rectifying member, at least in the vicinity of the substrate to be processed in the first region. A step of replacing the chemical in the processing tank with the water while forming an upward flow. In the step of replacing the processing liquid in the processing tank with the chemical liquid, the supply amount per unit time of the chemical liquid supplied into the processing tank is the step of replacing the chemical liquid in the processing tank with the water. The substrate processing method according to claim 1, wherein the substrate supply method is substantially the same as a supply amount of the water supplied into the processing tank per unit time. The step of arranging the substrate to be processed in the first region of the processing tank includes:
The processing liquid is supplied to the first region from an upper supply pipe connected to the first region of the processing tank, and the second region is supplied from a lower supply pipe connected to the second region of the processing tank. The substrate processing method according to claim 1, further comprising a step of supplying the processing liquid to the storage tank and storing the processing liquid in the processing tank. The step of disposing the substrate to be processed in the first region of the processing tank further includes the step of disposing the substrate to be processed in the first region of the processing tank in which the processing liquid is stored. The substrate processing method according to claim 3, wherein: The substrate processing method according to claim 1, wherein the processing liquid is water. The rectifying member comprises a rectifying plate having a plurality of through holes and dividing the inside of the processing tank into the first region and the second region,
The liquid supplied to the second region flows from the second region into the first region through a through hole of the rectifying plate. Substrate processing method. The substrate processing method according to claim 1, wherein the chemical solution is ammonia water. After the step of supplying the chemical liquid and replacing the processing liquid in the processing tank with the chemical liquid, the chemical liquid is supplied to the second area of the processing tank and from the second area via the rectifying member. The step of allowing the chemical solution to flow into the first region and immersing the substrate to be processed in the chemical solution in the processing tank while forming an upward flow at least in the vicinity of the substrate to be processed in the first region. The substrate processing method according to claim 1, further comprising: After the step of supplying the water and replacing the chemical in the processing tank with the water, supplying water to the first area of the processing tank, and at least the substrate to be processed in the first area The substrate processing method according to claim 1, further comprising a step of stirring the liquid in the vicinity. In the step of supplying the water and stirring the liquid in the first region in the processing tank, the water is supplied to the first region and the water is supplied to the second region of the processing tank. The substrate processing method according to claim 9. The substrate processing method according to claim 1, wherein in at least one of the steps, an ultrasonic wave is generated in the liquid in the processing tank. A processing tank including a first region that accommodates a substrate to be processed, and a second region disposed below the first region;
A rectifying member provided between the first region and the second region in the treatment tank;
A lower supply pipe connected to the second region of the treatment tank and capable of supplying at least a chemical solution and water into the second region of the treatment tank;
A switching mechanism that is connected to the lower supply pipe and switches the supply of liquid from the lower supply pipe;
A control device that is connected to the switching mechanism and controls the supply of liquid from the lower supply pipe into the second region of the processing tank;
The controller is
The chemical solution is supplied to the second region of the treatment tank that stores the treatment liquid and accommodates the substrate to be processed, and the chemical solution is caused to flow from the second region to the first region through the rectifying member. While forming an upward flow at least in the vicinity of the substrate to be processed in one region, the processing solution in the processing tank is replaced with the chemical solution,
Thereafter, water is supplied to the second region of the processing tank and the water is allowed to flow from the second region to the first region via the rectifying member, so that at least the substrate to be processed in the first region is supplied. The substrate processing apparatus, wherein the switching mechanism is controlled so as to replace the chemical in the processing tank with the water while forming an upward flow in the vicinity. The controller is
When replacing the processing liquid in the processing tank with the chemical liquid, the supply amount per unit time of the chemical liquid supplied into the processing tank is when the chemical liquid in the processing tank is replaced with the water. The substrate processing apparatus according to claim 12 , wherein the switching mechanism is controlled to be substantially equal to a supply amount of the water supplied into the processing tank per unit time. The rectifying member has a rectifying plate in which a large number of through holes are formed,
14. The substrate processing according to claim 12, wherein the liquid supplied to the second region flows into the second region from the first region through a through hole of the rectifying plate. apparatus. An upper supply pipe connected to the first region of the processing tank and capable of supplying a liquid into the first region of the processing tank;
The switching mechanism is connected to the upper supply pipe, and is configured to switch the supply of liquid from the upper supply pipe,
The said control apparatus is connected with the said upper side supply pipe | tube, and controls supply of the liquid from the said upper side supply pipe | tube into the said 1st area | region of the said processing tank, The one of Claim 12 thru | or 14 characterized by the above-mentioned. 2. The substrate processing apparatus according to 1. A plurality of ejection members provided in the first region of the treatment tank so that the arrangement positions along the vertical direction are different from each other;
The substrate processing apparatus according to claim 15, wherein the upper supply pipe is connected to the discharge member, and liquid is discharged into the first region of the processing tank through the discharge member. The controller is
Before supplying the chemical liquid from the lower supply pipe into the processing tank, the processing liquid is supplied from the upper supply pipe to the first area, and the processing liquid is supplied from the lower supply pipe to the second area. The substrate processing apparatus according to claim 15, wherein the switching mechanism is controlled so that the processing liquid is stored in the processing tank. The controller is
After supplying water into the processing tank from the lower supply pipe, water is supplied from the upper supply pipe to the first region to stir the liquid at least in the vicinity of the substrate to be processed in the first region. The substrate processing apparatus according to claim 15, wherein the switching mechanism is controlled as follows. The controller is
When stirring the liquid in the first region in the processing tank, water is supplied from the upper supply pipe to the first region, and water is supplied from the lower supply pipe to the second region. The substrate processing apparatus according to claim 18, wherein the switching mechanism is controlled. The controller is
After supplying the chemical liquid from the lower supply pipe and replacing the processing liquid in the processing tank with the chemical liquid, the chemical liquid is continuously supplied from the lower supply pipe to the second region and via the rectifying member. The chemical solution is allowed to flow from the second region into the first region, and an upward flow is formed at least in the vicinity of the substrate to be processed in the first region, while the chemical solution is placed in the processing tank. The substrate processing apparatus according to claim 12, wherein the switching mechanism is controlled so as to be immersed in the substrate. 21. The substrate processing apparatus according to claim 12, further comprising an ultrasonic generator that generates ultrasonic waves in the liquid in the processing tank. The substrate processing apparatus according to claim 12, wherein the processing liquid is water. The substrate processing apparatus according to claim 12, wherein the chemical solution is ammonia water. Provided between a processing tank including a first area for accommodating a substrate to be processed and a second area disposed below the first area, and between the first area and the second area in the processing tank. A program executed by a control device that controls the substrate processing apparatus including the rectifying member,
By being executed by the control device,
Placing the substrate to be processed in the first region of the processing tank, and immersing the substrate to be processed in the processing liquid stored in the processing tank;
The chemical solution is supplied to the second region of the treatment tank and the chemical solution is caused to flow from the second region to the first region via the rectifying member, and at least in the vicinity of the substrate to be treated in the first region. Replacing the treatment liquid in the treatment tank with the chemical solution while forming an upward flow;
Supplying water to the second region of the processing tank and flowing the water from the second region to the first region via the rectifying member, at least in the vicinity of the substrate to be processed in the first region. A program for causing a substrate processing apparatus to perform a processing method for a substrate to be processed, including the step of replacing the chemical in the processing tank with the water while forming an upward flow. Provided between a processing tank including a first area for accommodating a substrate to be processed and a second area disposed below the first area, and between the first area and the second area in the processing tank. A recording medium on which a program executed by a control device that controls a substrate processing apparatus including the rectifying member is recorded,
By executing the program by the control device,
Placing the substrate to be processed in the first region of the processing tank, and immersing the substrate to be processed in the processing liquid stored in the processing tank;
The chemical solution is supplied to the second region of the treatment tank and the chemical solution is caused to flow from the second region to the first region via the rectifying member, and at least in the vicinity of the substrate to be treated in the first region. Replacing the treatment liquid in the treatment tank with the chemical solution while forming an upward flow;
Supplying water to the second region of the processing tank and flowing the water from the second region to the first region via the rectifying member, at least in the vicinity of the substrate to be processed in the first region. A substrate processing apparatus, comprising: a substrate processing apparatus including: a step of replacing the chemical in the processing tank with the water while forming an upward flow.

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