JPH0475341A - Method and apparatus for cleaning semiconductor substrate - Google Patents

Abstract

PURPOSE:To enhance a cleaning effect by a method wherein a cleaning liquid is jetted to the stagnant part, of a cleaning liquid, which is caused inside a cleaning tank, ultrasonic waves are impinged on the part of a cleaning liquid to which ultrasonic waves have been impressed is jetted on the part so that the stagnant part is diffused and that a new cleaning liquid always comes into contact with a semiconductor substrate. CONSTITUTION:A substrate support jig 6 which has supported a plurality of semiconductor substrates 5 is placed inside a cleaning tank 1. A cleaning liquid is fed into the cleaning tank 1 form a cleaning-liquid supply port 2; it is made to overflow; the semiconductor substrates 5 are cleaned. At this time, respective cleaning liquids are jetted, by using cleaning-liquid jet silicones 3, 4, to stagnant parts 7, 8, of the cleaning liquid, which are caused inside the cleaning tank 1; the stagnant parts 7, 8 are diffused so that new cleaning liquids always come into contact with the semiconductor substrates 5. It is preferable that the jet speed of the cleaning liquids from the cleaning-liquid jet silicones 3, 4 is set at two times or higher the speed of the cleaning liquid which is fed from the cleaning liquid supply port 2.

Description

[Detailed Description of the Invention] [Summary] Regarding improvements in semiconductor substrate cleaning methods, particularly improvements that improve cleaning efficiency, an object of the present invention is to provide a semiconductor substrate cleaning method that has a high throughput and is highly effective in cleaning. In the semiconductor substrate cleaning method, the semiconductor substrates are cleaned by loading a plurality of semiconductor substrates into an overflow type cleaning tank and supplying a cleaning liquid from a cleaning liquid supply port provided at the bottom of the cleaning tank to clean the semiconductor substrates. The system is configured to inject cleaning liquid, irradiate ultrasonic waves, or inject cleaning liquid to which ultrasonic waves are applied to a stagnation area of cleaning liquid generated in the tank.

[Industrial application field]

The present invention relates to improvements in semiconductor substrate cleaning methods and cleaning equipment, and particularly to improvements that improve cleaning efficiency.

[Prior Art] As semiconductor integrated circuits become smaller and more highly integrated, it is strongly desired that semiconductor substrates used in the manufacture of semiconductor integrated circuits be free from contamination with particles, metals, and the like. For this reason, a semiconductor substrate cleaning apparatus is used to remove contaminants adhering to the semiconductor substrate, and a configuration diagram of a conventional semiconductor substrate cleaning apparatus is shown in FIG. A plurality of semiconductor substrates 5 supported by a substrate support jig 6 are loaded into an overflow type cleaning tank 1, and a cleaning liquid is supplied from a cleaning liquid supply port 2 provided at the bottom of the cleaning tank 1. The liquid overflows from the upper part of the semiconductor substrate 5 to clean the semiconductor substrate 5.

In addition, Japanese Patent Laid-Open No. 1-9552 describes a cleaning method and a cleaning apparatus in which a cleaning liquid to which ultrasonic waves are applied is directly injected onto a semiconductor substrate in order to improve the cleaning effect. In this cleaning method and apparatus, semiconductor substrates are loaded one by one into a cleaning tank, and a cleaning liquid to which ultrasonic waves are applied is directly sprayed onto the semiconductor substrates to remove contaminants.

[Problem to be solved by the invention]

In the cleaning device shown in FIG. 5, the cleaning liquid supplied from the cleaning liquid supply port 2 provided at the bottom of the cleaning tank 1 does not form a laminar flow in the cleaning tank 1, but a turbulent flow occurs.
Stagnant parts 7 and 8 of the cleaning liquid occur in one category area. In these stagnation parts 7 and 8, the same cleaning liquid is always circulating and is not replaced with a new cleaning liquid supplied from the cleaning liquid supply port 2, so that the contaminants that have been taken off from the semiconductor substrate 5 are returned to the semiconductor substrate. 5, which has the disadvantage that the cleaning effect is reduced.

Furthermore, in the cleaning method and apparatus described in JP-A-1-9552, the cleaning liquid to which ultrasonic waves have been applied is directly injected onto the semiconductor substrate, so an improvement in the cleaning effect can be expected; Since each sheet must be washed one by one, the throughput is low and cleaning takes a huge amount of time.

The purpose of the present invention is to overcome this drawback and has two independent objectives.

The first object is to provide a method for cleaning semiconductor substrates that has a high throughput and a high cleaning effect.

A second object is to provide a cleaning device for use in the cleaning method.

[Means to solve the problem]

Of the above two objectives, the first objective can be achieved by any of the following means.

The first method is to load a plurality of semiconductor substrates (5) into an overflow type cleaning tank (1), and supply cleaning liquid from a cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1). In this semiconductor substrate cleaning method, the semiconductor substrate (5) is cleaned by injecting the cleaning liquid into the stagnation parts (7, 8) of the cleaning liquid generated in the cleaning tank (1).

The second method is a semiconductor substrate cleaning method in which ultrasonic waves are irradiated to the stagnation parts (7, 8) of the cleaning liquid generated in the cleaning tank (1).

The third means is a semiconductor substrate cleaning method in which a cleaning liquid to which ultrasonic waves have been applied is injected into the stagnation parts (7, 8) of the cleaning liquid generated in the cleaning tank (1).

Of the above two objectives, the second objective can be achieved by any of the following means.

The first means is to inject cleaning liquid into an overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom and into stagnation parts (7 and 8) of the cleaning liquid supplied into this cleaning tank (1). This is a semiconductor substrate cleaning apparatus having cleaning liquid spraying means (3, 4).

The second method is to irradiate an overflow type cleaning tank (1) with a cleaning liquid supply port (2) on the bottom and stagnation parts (7, 8) of the cleaning liquid supplied in this cleaning tank (1) with ultrasonic waves. This is a semiconductor substrate cleaning apparatus having ultrasonic irradiation means (9, 10).

The third means is to apply ultrasonic waves to an overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom and to the stagnation parts (7 and 8) of the cleaning liquid supplied in this cleaning tank (1). Ultrasonic/cleaning liquid spraying means (11.
12).

[Function] In the semiconductor substrate cleaning method and cleaning apparatus according to the present invention, the cleaning liquid is injected into the stagnation part of the cleaning liquid generated in the cleaning tank, the ultrasonic wave is injected, or the ultrasonic wave is applied. By spraying the cleaning liquid, the stagnation area is diffused and disappears, and new cleaning liquid is always supplied to the surface of the semiconductor substrate, so that the contaminants that have separated from the semiconductor substrate are removed from the cleaning tank by the cleaning liquid without being attached again. carried and removed.

Even if a plurality of semiconductor substrates are loaded into the cleaning tank, it is necessary to spray cleaning liquid or ultrasonic waves to all the stagnation areas that occur between two adjacent semiconductor substrates, or
By spraying the cleaning liquid to which ultrasonic waves have been applied, all stagnation can be diffused and eliminated.
The cleaning effect can also be enhanced when multiple semiconductor substrates are cleaned at the same time. Note that it is also possible to enhance the cleaning effect by adding a cleaning liquid spraying means, an ultrasonic irradiation means, or an ultrasonic/cleaning liquid spraying means to a conventional cleaning apparatus that cleans a plurality of semiconductor substrates at the same time.

[Embodiments] Hereinafter, semiconductor substrate cleaning methods and cleaning apparatuses according to six embodiments of the present invention will be described with reference to the drawings.

See Satogami Group, Figure 1. Figure 1 is a block diagram of a semiconductor substrate cleaning apparatus according to the present invention. In the figure, 1 is an overflow type cleaning tank having a cleaning liquid supply port 2 on the bottom, and 3.4 is a stagnation part 7.
8 is a cleaning liquid injection means consisting of a nozzle and the like that injects cleaning liquid.

A substrate support jig 6 supporting a plurality of semiconductor substrates 5 is inserted into the cleaning tank 1, and the cleaning liquid is supplied from the cleaning liquid supply port 2 to the cleaning tank 1.
The semiconductor substrate 5 is cleaned by supplying the liquid to the inside and overflowing from the upper end. At this time, the cleaning liquid is sprayed onto the cleaning liquid stagnation parts 7 and 8 generated in the cleaning filter using the cleaning liquid injection means 3 and 4, respectively, to diffuse the stagnation parts 7 and 8,
A new cleaning solution is always brought into contact with the semiconductor substrate 5.

Note that the jetting speed of the cleaning liquid from the cleaning liquid jetting means 3 and 4 is preferably at least twice the flow rate of the cleaning liquid supplied from the cleaning liquid supply port 2.

Note that the cleaning liquid spraying means 3 and 4 consisting of nozzles and the like are configured to spray the cleaning liquid onto all areas sandwiched between two adjacent semiconductor substrates of a plurality of semiconductor substrates supported by the substrate support jig 6. , a plurality of them are provided in the direction perpendicular to the plane of the paper in FIG. 1, or, as shown in FIG. All stagnation parts 7 and 8
It is preferable to spray the cleaning liquid toward.

I ■ See Figure 2 In the first example, the cleaning liquid is sprayed from the same direction to the stagnation areas 7 and 8; The means 3 and 4 are separately provided on two opposing side walls of the cleaning tank 1 so as to spray into the stagnation parts 7 and 8, respectively.

Similar to the second example, external ultrasonic irradiation means 9 and 10 are provided separately on two opposing side walls of the cleaning tank 1, and irradiate ultrasonic waves toward the stagnation areas 7 and 8, respectively. do.

Refer to Fig. 4.In place of the cleaning liquid injection means 3 and 4 in the first example, ultrasonic and cleaning liquid injection means 11 and 12, which are a combination of an ultrasonic irradiation means and a cleaning liquid injection means, are provided to apply ultrasonic waves. The washed cleaning liquid is sprayed into the stagnation parts 7 and 8.

In place of the cleaning liquid spraying means 3 and 4 in the first example (see FIG. 3), ultrasonic irradiation means 9 and 10 are provided to irradiate ultrasonic waves toward the stagnation parts 7 and 8, respectively.

``1'' Ultrasonic wave/cleaning liquid injection means 11 and 12 are provided separately on two opposing side walls of the cleaning tank 1, as in the second example, and ultrasonic waves are directed toward the stagnation areas 7 and 8, respectively. The cleaning liquid applied with this amount is sprayed.

Note that the cleaning liquid spraying means 3 and 4 or the ultrasonic cleaning liquid spraying means 11 and 12 do not penetrate the side surface of the cleaning tank 1 (they are suspended in the cleaning tank 1 from the upper opening of the cleaning tank 1). You can also do this.

〔Effect of the invention〕

As explained above, in the semiconductor substrate cleaning method and cleaning apparatus according to the present invention, it is possible to determine whether the cleaning liquid is injected into the stagnation part of the cleaning liquid generated in the cleaning tank or the ultrasonic wave is irradiated.
Alternatively, by spraying a cleaning solution to which ultrasonic waves have been applied, the stagnation area is diffused so that new cleaning solution always comes into contact with the semiconductor substrate, so that contaminants are effectively removed.
The cleaning effect is improved. Furthermore, since a plurality of semiconductor substrates can be cleaned at the same time, throughput is improved.

[Brief explanation of the drawing]

1st TI! J is a configuration diagram of a semiconductor substrate cleaning apparatus according to a first embodiment of the present invention. FIG. 2 is a configuration diagram of a semiconductor substrate cleaning apparatus according to a second embodiment of the present invention. FIG. 3 is a configuration diagram of a semiconductor substrate cleaning apparatus according to a third embodiment of the present invention. FIG. 4 is a configuration diagram of a semiconductor substrate cleaning apparatus according to a fifth embodiment of the present invention. FIG. 5 is a configuration diagram of a semiconductor substrate cleaning apparatus according to the prior art. FIG. 6 shows an example of the cleaning liquid injection means. l...Overflow type cleaning tank, 2...Cleaning liquid supply port, 3.4...Cleaning liquid injection means, 5...Semiconductor substrate, 6...Substrate support jig, 7.8...Stagnation Section 9.10...Ultrasonic irradiation means, 11.12...Ultrasonic/cleaning liquid injection means.

Claims (1)

[Claims] [1] A plurality of semiconductor substrates (5) are loaded into an overflow type cleaning tank (1), and a cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1) is used. In the semiconductor substrate cleaning method of cleaning the semiconductor substrate (5) by supplying a cleaning liquid, a stagnation part (7) of the cleaning liquid generated in the cleaning tank (1) is provided.
8) A semiconductor substrate cleaning method characterized by spraying a cleaning liquid. [2] A plurality of semiconductor substrates (5) are placed in an overflow type cleaning tank (1), and a cleaning liquid is supplied from the cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1) to In a semiconductor substrate cleaning method for cleaning a semiconductor substrate (5), a cleaning liquid stagnation portion (7) generated in the cleaning tank (1) is provided.
8) A semiconductor substrate cleaning method characterized by irradiating ultrasonic waves. [3] A plurality of semiconductor substrates (5) are placed in an overflow type cleaning tank (1), and a cleaning liquid is supplied from the cleaning liquid supply port (2) provided at the bottom of the cleaning tank (1) to In a semiconductor substrate cleaning method for cleaning a semiconductor substrate (5), a cleaning liquid stagnation portion (7) generated in the cleaning tank (1) is provided.
8) A semiconductor substrate cleaning method characterized by spraying a cleaning liquid to which ultrasonic waves have been applied. [4] An overflow type cleaning tank (1) with a cleaning liquid supply port (2) on the bottom, and a stagnation part (7) for the cleaning liquid supplied into the cleaning tank (1).
8) A semiconductor substrate cleaning apparatus comprising cleaning liquid spraying means (3 and 4) for spraying a cleaning liquid onto the semiconductor substrate. [5] An overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom, and a stagnation part (7) for the cleaning liquid supplied into the cleaning tank (1).
8) Ultrasonic irradiation means (9, 10) for irradiating ultrasonic waves to the semiconductor substrate cleaning apparatus. [6] An overflow type cleaning tank (1) having a cleaning liquid supply port (2) on the bottom, and a stagnation part (7) for the cleaning liquid supplied into the cleaning tank (1).
8) A semiconductor substrate cleaning apparatus comprising ultrasonic/cleaning liquid spraying means (11, 12) for spraying a cleaning liquid to which ultrasonic waves have been applied.