JP5061010B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP5061010B2 JP5061010B2 JP2008091664A JP2008091664A JP5061010B2 JP 5061010 B2 JP5061010 B2 JP 5061010B2 JP 2008091664 A JP2008091664 A JP 2008091664A JP 2008091664 A JP2008091664 A JP 2008091664A JP 5061010 B2 JP5061010 B2 JP 5061010B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating resin
- resin layer
- electrode
- protruding
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 101
- 239000010410 layer Substances 0.000 claims description 183
- 229920005989 resin Polymers 0.000 claims description 110
- 239000011347 resin Substances 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 40
- 239000002184 metal Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 29
- 239000010949 copper Substances 0.000 description 29
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 12
- 239000010931 gold Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical compound [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Wire Bonding (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008091664A JP5061010B2 (ja) | 2008-03-31 | 2008-03-31 | 半導体モジュール |
| US12/345,019 US20090168391A1 (en) | 2007-12-27 | 2008-12-29 | Substrate for mounting device and method for producing the same, semiconductor module and method for producing the same, and portable apparatus provided with the same |
| US12/900,175 US8438724B2 (en) | 2007-12-27 | 2010-10-07 | Method for producing substrate for mounting device and method for producing a semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008091664A JP5061010B2 (ja) | 2008-03-31 | 2008-03-31 | 半導体モジュール |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009246175A JP2009246175A (ja) | 2009-10-22 |
| JP2009246175A5 JP2009246175A5 (enExample) | 2011-05-12 |
| JP5061010B2 true JP5061010B2 (ja) | 2012-10-31 |
Family
ID=41307734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008091664A Expired - Fee Related JP5061010B2 (ja) | 2007-12-27 | 2008-03-31 | 半導体モジュール |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5061010B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69736062T2 (de) | 1996-02-28 | 2007-01-11 | Matsushita Electric Industrial Co., Ltd., Kadoma | Optische Platte mit verschachtelt aufgezeichneten Digitalvideo-Datenströmen, sowie Vorrichtungen und Verfahren zur Aufzeichnung auf und Wiedergabe von der optischen Platte |
| JP5431232B2 (ja) * | 2010-03-31 | 2014-03-05 | 三洋電機株式会社 | 半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002118210A (ja) * | 2000-10-10 | 2002-04-19 | Hitachi Cable Ltd | 半導体装置用インタポーザ及びこれを用いた半導体装置 |
| JP2007173749A (ja) * | 2005-12-26 | 2007-07-05 | Sony Corp | 半導体装置及びその製造方法 |
-
2008
- 2008-03-31 JP JP2008091664A patent/JP5061010B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009246175A (ja) | 2009-10-22 |
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