JP5048029B2 - 負バイアス温度不安定性を抑制する動的な基板バイアスシステムおよびその方法 - Google Patents
負バイアス温度不安定性を抑制する動的な基板バイアスシステムおよびその方法 Download PDFInfo
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- JP5048029B2 JP5048029B2 JP2009209804A JP2009209804A JP5048029B2 JP 5048029 B2 JP5048029 B2 JP 5048029B2 JP 2009209804 A JP2009209804 A JP 2009209804A JP 2009209804 A JP2009209804 A JP 2009209804A JP 5048029 B2 JP5048029 B2 JP 5048029B2
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- mos transistor
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
110 PチャネルMOSトランジスタ
120 NチャネルMOSトランジスタ
200 電源制御回路を備えたMOSトランジスタのインバータ
210 PチャネルMOSトランジスタ
215 電源制御回路
310 動向線
320 動向線
330 動向線
Claims (6)
- 集積回路であって、少なくとも、
電源に接続されているソース極を備えたPチャネルCMOSトランジスタと、
前記電源に接続され、第1の電位と第2の電位とを出力するように設けられており、前記第1の電位は前記第2の電位とは異なっており、しかも前記第1の電位は前記電源電圧の1/2以上かつ前記電源電圧未満であるとともに、前記第2の電位は前記電源電圧以上かつ前記電源電圧の3/2以下である電圧制御回路と、を備えており、
前記PチャネルCMOSトランジスタがオンになったとき、前記第1の電位が前記PチャネルCMOSトランジスタの基板に印加され、前記PチャネルCMOSトランジスタがオフになったとき、前記第2の電位が前記PチャネルCMOSトランジスタの前記基板に印加されることを特徴とする負バイアス温度不安定性を抑制するための集積回路。 - 前記第1の電位が前記電源電圧の1/2であることを特徴とする請求項1に記載の集積回路。
- 前記第2の電位が前記電源電圧の3/2であることを特徴とする請求項1または2に記載の集積回路。
- PチャネルCMOSトランジスタにおける負バイアス温度不安定性を抑制する方法であって、
PチャネルCMOSトランジスタのソース極に電源を提供することと、
前記PチャネルCMOSトランジスタがオンになったとき、前記PチャネルCMOSトランジスタの基板に、第1の電位を印加することと、
前記PチャネルCMOSトランジスタがオフになったとき、前記PチャネルCMOSトランジスタの前記基板に、前記第1の電位とは異なる第2の電位を印加することと、を含み、
前記第1の電位は前記電源電圧の1/2以上かつ前記電源電圧未満であるとともに、前記第2の電位は前記電源電圧以上かつ前記電源電圧の3/2以下である
ことを特徴とする方法。 - 前記第1の電位が前記電源電圧の1/2であることを特徴とする請求項4に記載の方法。
- 前記第2の電位が前記電源電圧の3/2であることを特徴とする請求項4または5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/260,982 US20100102872A1 (en) | 2008-10-29 | 2008-10-29 | Dynamic Substrate Bias for PMOS Transistors to Alleviate NBTI Degradation |
US12/260,982 | 2008-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010109969A JP2010109969A (ja) | 2010-05-13 |
JP5048029B2 true JP5048029B2 (ja) | 2012-10-17 |
Family
ID=42116878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009209804A Active JP5048029B2 (ja) | 2008-10-29 | 2009-09-10 | 負バイアス温度不安定性を抑制する動的な基板バイアスシステムおよびその方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100102872A1 (ja) |
JP (1) | JP5048029B2 (ja) |
CN (2) | CN101729057A (ja) |
Families Citing this family (12)
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US20120206188A1 (en) * | 2011-02-14 | 2012-08-16 | California Institute Of Technology | Systems and methods for dynamic mosfet body biasing for low power, fast response vlsi applications |
US8519767B2 (en) | 2011-12-21 | 2013-08-27 | Micron Technology, Inc. | Methods, apparatuses, and circuits for bimodal disable circuits |
CN103513173B (zh) * | 2012-06-29 | 2016-04-20 | 复旦大学 | 基于压控振荡器的bti测试装置及其测试方法 |
US9086865B2 (en) | 2012-07-09 | 2015-07-21 | International Business Machines Corporation | Power napping technique for accelerated negative bias temperature instability (NBTI) and/or positive bias temperature instability (PBTI) recovery |
KR102122464B1 (ko) | 2013-11-29 | 2020-06-12 | 삼성전자 주식회사 | 셀프 리프레쉬 정보를 이용하여 부 바이어스 온도 불안정 현상을 방지하는 방법 |
CN105334899B (zh) * | 2014-07-28 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | Pmos晶体管的修复电路及方法 |
US9473135B2 (en) * | 2014-09-29 | 2016-10-18 | Stmicroelectronics International N.V. | Driver circuit including driver transistors with controlled body biasing |
KR20170068720A (ko) | 2015-12-09 | 2017-06-20 | 에스케이하이닉스 주식회사 | 인버터회로 |
US9627041B1 (en) * | 2016-01-29 | 2017-04-18 | Qualcomm Incorporated | Memory with a voltage-adjustment circuit to adjust the operating voltage of memory cells for BTI effect screening |
US10483973B2 (en) * | 2017-12-06 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature instability-aware circuit |
US10726883B2 (en) | 2018-01-31 | 2020-07-28 | Samsung Electronics Co., Ltd. | Integrated circuit devices having strobe signal transmitters with enhanced drive characteristics |
CN117767918A (zh) * | 2022-09-19 | 2024-03-26 | 长鑫存储技术有限公司 | 触发器电路和电子设备 |
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-
2008
- 2008-10-29 US US12/260,982 patent/US20100102872A1/en not_active Abandoned
-
2009
- 2009-06-30 CN CN200910151528A patent/CN101729057A/zh active Pending
- 2009-06-30 CN CN201410674269.8A patent/CN104391537A/zh active Pending
- 2009-09-10 JP JP2009209804A patent/JP5048029B2/ja active Active
Also Published As
Publication number | Publication date |
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CN104391537A (zh) | 2015-03-04 |
JP2010109969A (ja) | 2010-05-13 |
CN101729057A (zh) | 2010-06-09 |
US20100102872A1 (en) | 2010-04-29 |
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