JP5047077B2 - Method for manufacturing solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a chip size package (CSP) type solid-state imaging device in which a microlens is integrated on a chip.

A solid-state imaging device including a CCD (Charge Coupled Device) is required to be downsized due to the necessity of application to a mobile phone, a digital camera, and the like.
As one of them, a solid-state imaging device in which a microlens is provided in a light receiving area of a semiconductor chip has been proposed. In such a case, for example, by integrally mounting a solid-state imaging device having a microlens in the light-receiving area so as to have an airtight sealing portion between the light-receiving area of the solid-state imaging device and the microlens, A solid-state imaging device designed to be miniaturized has been proposed (Patent Document 1).

According to such a configuration, the mounting area can be reduced, and optical components such as a filter, a lens, and a prism can be bonded to the surface of the hermetic sealing portion, and the light collecting ability of the microlens can be improved. It is possible to reduce the mounting size without causing a decrease.
JP-A-7-202152

However, in such a solid-state imaging device, it is necessary to provide a hermetic sealing part to improve the light collecting ability. However, if the hermetic sealing part is formed by interposing a spacer, an adhesive is used at the joint. May flow out and cause deterioration of optical characteristics. In addition, there is a problem that a difference in coefficient of thermal expansion occurs at the joint and distortion occurs, or the dimension of the hermetic seal portion changes.
When mounting such a solid-state imaging device, it is necessary to mount the signal on the support substrate on which the solid-state imaging device is mounted and to make electrical connection and sealing by a method such as bonding. There is. As described above, since the number of man-hours is large, there is a problem that a lot of time is required for mounting.
The present invention has been made in view of the above circumstances, without causing the outflow of the adhesive, reliable, and an object thereof is to provide a method for producing easily solid-state imaging device manufacturing.

The manufacturing method of the solid-state imaging device of the present invention is as follows.
A semiconductor substrate having a solid-state image sensor formed on the surface;
A translucent member facing the light receiving region of the solid-state imaging element with a gap therebetween;
An adhesive is formed on the semiconductor substrate and the translucent member in order to maintain a distance between the semiconductor substrate and the translucent member, which is made of a material having a thermal expansion coefficient between the semiconductor substrate and the translucent member. A solid-state imaging device in which a rough surface is formed on a bonding surface of the spacer facing at least one of the semiconductor substrate and the light-transmitting member.
An imaging element forming step of forming a plurality of the solid-state imaging elements on a semiconductor substrate surface;
A sealing cover forming step of forming a sealing cover in which the spacers for the plurality of solid-state imaging elements are bonded to a plate of a translucent member;
Bonding the semiconductor substrate and the sealing cover, and bonding the spacer to a position surrounding each solid-state imaging device formed on the surface of the semiconductor substrate;
A separation step of separating the joined body obtained in the joining step into individual solid-state imaging devices ,
The sealing cover forming step includes a step of adhering a spacer substrate having a rough surface formed on at least one surface to a plate of the translucent member or a dummy plate, and the spacers for a plurality of solid-state imaging devices Forming a resist pattern at a spacer formation position of the spacer substrate and etching the spacer substrate.

According to this configuration, since at least one surface of the spacer substrate is roughened to form a space for receiving the adhesive and to form a liquid reservoir, positioning at the wafer level and via the spacer Even when separated by solid-state image sensor after being integrated by joining together via an adhesive, the adhesive does not flow out, forming a solid-state imaging device that is easy to manufacture and highly reliable It becomes possible to do. In addition , since either one of the bonding surfaces is roughened , the adhesive is dispersed and the fixation is also strong.

According to the method for manufacturing a solid-state image pickup device of the present invention, the solid-state image pickup device is integrated after being positioned at the wafer level and integrated by mounting through a spacer including the formation of an external extraction electrode terminal. Therefore, it is possible to form a solid-state imaging device that is easy to manufacture and highly reliable.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 1A shows a cross-sectional view of this solid-state imaging device, FIG. 1B shows a main part enlarged cross-sectional view, and FIGS. 1C and 1D show a main part enlarged cross-sectional view. In addition, the surface of the solid-state image pickup device substrate 100 formed of a silicon substrate 101 as a semiconductor substrate on which the solid-state image pickup device substrate 100 is formed has silicon so that a gap C corresponding to the light receiving region of the silicon substrate 101 is provided. The glass substrate 201 as a translucent member is bonded via the spacer 203S made of the above, and the periphery of the silicon substrate 101 is individually separated by dicing, and the peripheral surface of the silicon substrate 101 exposed from the glass substrate 201 An electrical connection with an external circuit (not shown) is achieved through the bonding pad BP formed on the substrate. The end surface of the spacer 203S and the bonding region 101S on the surface of the silicon substrate 101 are both roughened as shown in enlarged sectional views in FIGS. 1 (c) and 1 (d), respectively. Here, the spacer 203S has a height of 10 to 500 μm, preferably 80 to 120 μm. Since the joint surface is roughened in this way, the adhesive layer easily enters and there is no leakage of the adhesive.

  Here, as shown in FIG. 1B, an enlarged cross-sectional view of the main part of the solid-state image pickup device substrate is a silicon on which a solid-state image pickup device is arranged and an RGB color filter 46 and a microlens 50 are formed. A substrate 101 is used.

Here, in the solid-state imaging device, a channel stopper 28 is formed in a p-well 101b formed on the surface of an n-type silicon substrate 101a, and a photodiode 14 and a charge transfer device 33 are formed with the channel stopper interposed therebetween. It will be. Here, the p + channel region 14b is formed in the n-type impurity region 14a, and the photodiode 14 is formed. In addition, a vertical charge transfer channel 20 made of an n-type impurity region having a depth of about 0.3 μm is formed in the p-well region 101b , and a gate insulating film 30 made of a silicon oxide film is formed on this vertical charge transfer channel 20b. A vertical charge transfer electrode 32 made of a polycrystalline silicon layer is formed to constitute a charge transfer element 33. A read gate channel 26 formed of a p-type impurity region is formed between the vertical charge transfer channel 20 and the photodiode 14 on the side from which signal charges are read out.

An n-type impurity region 14a is exposed along the readout gate channel 26 on the surface of the silicon substrate 101, and signal charges generated in the photodiode 14 are temporarily accumulated in the n-type impurity region 14a. The data is read out through the read gate channel 26.

  On the other hand, a channel stopper 28 made of a p + -type impurity region exists between the vertical charge transfer channel 20 and the other photodiodes 14, whereby the photodiodes 14 and the vertical charge transfer channels 20 are electrically separated. In addition, the vertical charge transfer channels 20 are separated from each other so as not to contact each other.

Further, the vertical charge transfer electrode 32 is formed so as to cover the readout gate channel 26, expose the n-type impurity region 14a , and expose a part of the channel stopper 28. Signal charges are transferred from the readout gate channel 26 below the electrode to which the readout signal is applied among the vertical charge transfer electrodes 32.

  The vertical charge transfer electrode 32 and the vertical charge transfer channel 20 constitute a vertical charge transfer device (VCCD) 33 that transfers the signal charge generated at the pn junction of the photodiode 14 in the vertical direction. The surface of the substrate on which the vertical charge transfer electrode 32 is formed is covered with a surface protective film 36, and a light shielding film 38 made of tungsten is formed thereon, and only the light receiving region 40 of the photodiode is opened, and the other regions are shielded from light. Is configured to do.

  Further, the upper layer of the vertical charge transfer electrode 32 is covered with a planarizing insulating film 43 for planarizing the surface and a translucent resin film 44 formed on the upper layer, and a filter layer 46 is further formed on the upper layer. Yes. In the filter layer 46, a red filter layer 46R, a green filter layer 46G, and a blue filter layer 46B are sequentially arranged so as to form a predetermined pattern corresponding to each photodiode 14.

  Furthermore, this upper layer is melted after patterning a transparent resin containing a photosensitive resin having a refractive index of 1.3 to 2.0 through the planarization insulating film 48 by an etching method using photolithography, and by surface tension. It is covered with a microlens array made up of microlenses 50 formed by cooling after rolling.

  Next, the manufacturing process of this solid-state imaging device will be described. As shown in FIGS. 2A to 2D and FIGS. 3A to 3C, the manufacturing method is positioned at the wafer level and integrated by mounting in a lump. This is based on the so-called wafer level CSP method in which each solid-state imaging device is separated. Although only two units are shown in the figure, a wafer on which a large number of solid-state image sensors are formed is used. This method is characterized by using a sealing glass 200 with a spacer in which a spacer 203S is formed in advance.

First, formation of a glass substrate with a spacer will be described.
As shown in FIG. 2A, a silicon substrate 203 serving as a spacer is attached to the surface of a glass substrate 201 via an adhesive layer 202 made of an ultraviolet curable adhesive (cationic polymerizable energy ray curable adhesive). Then, a resist pattern R1 is formed by photolithography. Besides this, a thermosetting adhesive can also be used.

  Then, as shown in FIG. 2B, the silicon substrate 203 is etched using the resist pattern as a mask in a state where the resist pattern R1 is left in the spacer portion by photolithography to form a spacer 203S. .

Thereafter, as shown in FIG. 2 (c), with the resist pattern R1 for forming the spacer 203S remaining, the inter-spacer region except for the inter-element region is filled with the resist R, and the glass substrate is fixed to a predetermined area. By etching to the depth, the inter-element groove portion 204 is formed as shown in FIG.
Further, an adhesive layer 207 is formed on the surface of the spacer. Here, since the spacer is formed of a silicon substrate, if etching is performed under such etching conditions that the etching rate of silicon oxide, which is the main component of the glass substrate, is sufficiently larger than the etching rate of silicon, Etching may be performed with the side wall of the spacer exposed in the inter-element region. A dicing blade (grinding stone) may be used when forming the inter-element groove portion 204.

  Alternatively, photolithography may be performed again to form a resist pattern that includes the entire sidewall of the spacer, and the groove 204 may be formed by etching through the resist pattern. Thus, the sealing cover glass 200 in which the groove portion 204 and the spacer 203S are formed is obtained.

  Next, a solid-state image sensor substrate is formed. When forming the element substrate, as shown in FIG. 3A, a silicon substrate 101 (in this case, a 6-inch wafer is used) is prepared in advance, and the solid-state imaging element is separated on the surface of the silicon substrate 101. A cutting groove 104 is formed in a region corresponding to the separation line by a method such as etching. Then, using a normal silicon process, a channel stopper layer is formed, a channel region is formed, and element regions such as charge transfer electrodes are formed. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.

  Thereafter, as shown in FIG. 3B, alignment is performed by alignment marks formed on the peripheral edge of each substrate, and sealing is performed on the solid-state imaging device substrate 100 in which the element regions are formed as described above. The cover glass 200 is placed and heated, and both are integrated by the adhesive layer 207. This step is preferably performed in a vacuum or in an inert gas atmosphere such as nitrogen gas. In the integration, not only a thermosetting adhesive but also an ultraviolet curable adhesive combined with thermosetting may be used. Further, when the surface of the solid-state imaging device substrate is Si or metal, it can be joined by surface activated room temperature joining without using an adhesive.

Thereafter, CMP (chemical mechanical polishing) is performed from the back surface side of the glass substrate, and the back surface side of the glass substrate 201 is removed until the groove portion 204 is reached.
By this step, it becomes possible to separate the glass substrates at the same time as they are thinned.

  Further, as shown in FIG. 3C, CMP is similarly performed from the back surface side of the silicon substrate 101, and polishing is performed up to the cutting groove 104, thereby separating into individual solid-state imaging devices.

  In this way, it is easy to manufacture and easy to handle because it is individually separated after being packaged together without performing individual positioning or electrical connection such as wire bonding. .

  Further, since the groove portion 204 is formed in the glass substrate 201 in advance and is removed from the surface to the depth reaching the groove portion 204 by a method such as CMP after mounting, separation is possible very easily. is there.

  In addition, the structure in which the edge of the glass substrate 201 is located on the inner side of the edge of the silicon substrate 101 on which the solid-state imaging device is formed and the surface of the silicon substrate 101 is exposed has a recess formed in advance on the glass substrate. After bonding, the film can be formed with high accuracy by an extremely simple process of removing to this depth by a method such as etch back or CMP. Further, it can be easily formed with good workability. In addition, individual solid-state imaging elements can be formed by simply separating or polishing the element forming surface sealed in the gap C by bonding, so that the solid-state imaging with high reliability and less damage to the elements. An element can be provided.

  Further, since the silicon substrate is thinned to a depth of about one-half by CMP, the size and thickness can be reduced. Furthermore, since the thickness is reduced after bonding with the glass substrate, it is possible to prevent a decrease in mechanical strength.

  In addition, since the bonding pads BP on the silicon substrate constituting the solid-state imaging device substrate 100 are exposed from the sealing portion formed by the spacer 203S and the glass substrate 201, the connection to the outside can be easily formed. is there.

  As described above, according to the configuration of the present invention, since positioning is performed at the wafer level and integrated by mounting in a lump, and then separated for each solid-state imaging device, manufacturing is easy and reliable. It is possible to form a solid-state imaging device having a high height.

In the first embodiment, the wiring layer including the bonding pad is a gold layer. However, the wiring layer is not limited to the gold layer, and may be another metal such as aluminum or another conductor layer such as silicide. Needless to say.
The microlens array can also be formed by forming a transparent resin film on the surface of the substrate and forming a lens layer having a refractive index gradient at a predetermined depth by ion transfer from the surface.

In addition to the silicon substrate, 42 alloy, metal, glass, photosensitive polyimide, polycarbonate resin, and the like can be appropriately selected as the spacer.
Moreover, in the said embodiment, although both the spacer end surface and the silicon substrate were roughened, any one may be sufficient. Furthermore, by similarly roughening at least one of the bonding surfaces of the light-transmitting cover glass and the spacer, it becomes possible to further improve the adhesion and form a bonding portion with a good appearance.

(Modification of the first embodiment)
Further, as the state of the joint surface, in addition to roughening, as shown in the modified examples in FIGS. 4 (a) to (f), a projection is formed, a recess is formed, and an end surface is inclined. Things are also effective.
That is, FIG. 4A shows a case where a convex portion is formed on the end face of the spacer 203S.
FIG. 4B shows a case where a recess is formed on the end face of the spacer 203S.
FIG. 4C shows an end face of the spacer 203S formed obliquely.
FIG. 4D shows a rounded end surface of the spacer 203S.
FIG. 4E shows the end face of the spacer 203S formed in a step shape.
FIG. 4F shows the end face of the spacer 203S that is rounded obliquely.
In either case, a gap is formed at the joint, and an adhesive enters the gap, so that good bonding can be achieved. Furthermore, there is no oozing out of the adhesive.
In addition, this is not limited to a spacer, but can be applied to any one or both of a spacer and a solid-state imaging device substrate, or a joint portion such as a spacer and a cover glass for sealing.

(Second Embodiment)
Next, a second embodiment of the present invention will be described.
In the first embodiment, the cutting groove 104 is formed in advance in the silicon substrate 101 constituting the solid-state image pickup device substrate 100, and the solid-state image pickup device substrate is sealed with the spacer made of the same silicon as the solid-state image pickup device substrate. After bonding to the stop cover glass, the silicon substrate 101 is separated while being thinned by performing CMP until it reaches the cutting groove 104 from the back surface side, but in this embodiment, the cutting groove is formed in the silicon substrate 101. It is characterized in that it is separated without forming the film, leaving the thickness as it is. About the other part, it forms as a rough surface like the said 1st Embodiment.

  That is, this joining and separation process is shown in FIGS. As shown in FIG. 4A, using a silicon substrate 101 as a starting material, a channel stopper layer is formed, a channel region is formed, and an element region 102 such as a charge transfer electrode is formed using a normal silicon process. To do. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.

  Thereafter, as shown in FIG. 4B, alignment is performed by alignment marks formed on the peripheral edge of each substrate, and the sealing cover glass 200 is formed on the solid-state imaging device substrate 100 formed as described above. Are integrated by the adhesive layer 207 by heating. At this time, since the cutting groove is not formed in the silicon substrate 101, the mechanical strength is high.

  Thereafter, as shown in FIG. 4C, as in the first embodiment, CMP (chemical mechanical polishing) is performed from the rear surface side of the glass substrate, and the rear surface side of the glass substrate 201 is moved to the groove portion 204. Remove until you reach.

By this step, it becomes possible to separate the glass substrates at the same time as they are thinned.
Further, as shown in FIG. 4D, the glass substrate 201 is cut with a diamond blade (grinding stone) and separated into individual solid-state imaging devices.

  According to this method, it is possible to form a highly reliable device that is thicker than the solid-state imaging device obtained in the first embodiment.

(Third embodiment)
Next, a third embodiment of the present invention will be described.
In the first embodiment, the cutting groove 104 is formed in advance in the silicon substrate 101 constituting the solid-state imaging device substrate 100, and after bonding, CMP is performed until the cutting groove 104 is reached from the back surface side. Although the silicon substrate 101 is separated while being thinned, in this embodiment, a dummy plate 301 made of a silicon substrate having a thickness of 50 to 700 μm is attached to the back surface side of the silicon substrate 101 with an adhesive layer 302 interposed therebetween. In this case, a cutting groove 304 having a depth reaching the dummy plate 301 is formed after the attachment.

Therefore, in the separation step, the adhesive layer 302 may be softened to eliminate the stickiness, and the dummy plate 301 may be removed.
Other parts are formed in the same manner as in the first embodiment.
That is, this joining and separation process is shown in FIGS. Using the silicon substrate 101 as a starting material, a channel stopper layer is formed, a channel region is formed, and device regions such as charge transfer electrodes are formed using a normal silicon process. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection. Thereafter, as shown in FIG. 6A, a dummy plate 301 made of a silicon substrate is attached to the back side of the silicon substrate 101 with an adhesive layer 302 interposed therebetween.

Thereafter, as shown in FIG. 6B, a cutting groove 304 is formed from the element formation surface side of the silicon substrate 101 using a diamond blade (grinding stone).
And as shown in FIG.6 (c), it aligned by the alignment mark (not shown) formed in the peripheral part of the solid-state image sensor board | substrate 100 and the sealing cover glass 200, and formed as mentioned above. The sealing cover glass 200 is placed on the solid-state imaging device substrate 100, and both are integrated by the adhesive layer 207 by heating. Here, the glass substrate is provided with the spacer 203S and the adhesive layer 207 formed in the steps of FIGS. At this time, the cutting groove 304 is formed so as to penetrate the silicon substrate 101, but since it is fixed by the dummy plate 301, the mechanical strength is high.

Thereafter, as shown in FIG. 6D, as in the first embodiment, CMP (chemical mechanical polishing) is performed from the back surface side of the glass substrate, and the back surface side of the glass substrate 201 is moved to the groove portion 204. Remove until you reach.
By this step, it becomes possible to separate the glass substrates at the same time as they are thinned.

  Further, as shown in FIG. 6E, the adhesive layer 302 on the back surface of the silicon substrate 101 is softened, and the dummy plate 301 is removed to separate the individual solid-state imaging devices. Here, it is desirable to select a material having a softening point lower than that of the adhesive layer 202 for bonding the spacer to the glass substrate 201 for the adhesive layer 302.

  According to this method, since the solid-state image pickup device substrate 100 is diced on the dummy plate 301 prior to bonding, it is applied after bonding as compared with the solid-state imaging device obtained in the first embodiment. Less stress is required and manufacturing yield is improved. In addition, it is possible to improve the reliability of the solid-state imaging device.

  In the above embodiment, the glass substrate and the spacer may be bonded using an adhesive layer, but anodic bonding or surface activated room temperature bonding is also applicable. According to anodic bonding, it is possible to easily obtain strong bonding.

  In the first to third embodiments, CMP is used for thinning the glass substrate, but a grinding method, a polishing method, an etching method, or the like is also applicable.

(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described.
In the first embodiment, the groove portion 204 is formed in advance in a region corresponding to the inter-element region of the glass substrate 201 constituting the sealing cover glass 200, and the solid-state imaging device substrate and the glass substrate are formed. After bonding, CMP is performed from the back side of the glass substrate 201 to separate the individual elements. However, in this embodiment, a glass substrate that does not form a recess is bonded, and dicing or laser is used at the time of separation. The periphery of the cutting line is evaporated, and the edge of the glass substrate 201 of each solid-state image sensor is adjusted so as to be inside the edge of the silicon substrate 101 constituting the solid-state image sensor substrate 100. is there. Other parts are formed in the same manner as in the first embodiment.

  That is, in this method, the processing of the glass substrate is finished when the spacer is formed as shown in FIG. 2B, and the glass substrate in which the spacer 203S is bonded to the flat glass substrate 201 is used as a starting material. .

  Then, as shown in FIG. 7A, a silicon substrate 101 (a 4 to 8 inch wafer is used here) is prepared in advance, and a separation line for separating each solid-state imaging element on the surface of the silicon substrate 101. A cutting groove 104 is formed in a region corresponding to the above by a method such as etching. Then, by using a normal silicon process, a channel stopper layer is formed, a channel region is formed, and an element region 102 such as a charge transfer electrode is formed. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.

  Thereafter, as shown in FIG. 7B, alignment is performed with alignment marks formed on the peripheral edge of each substrate, and the sealing cover glass 200 is formed on the solid-state imaging device substrate 100 formed as described above. Are integrated by the adhesive layer 207 by heating.

  Thereafter, as shown in FIG. 7C, the periphery of the cutting line is evaporated from the back side of the glass substrate by dicing or laser, and the edge of the glass substrate 201 of each solid-state image sensor constitutes the solid-state image sensor substrate 100. To be separated from the edge of the silicon substrate 101.

  Further, as shown in FIG. 7D, CMP is similarly performed from the back surface side of the silicon substrate 101, and polishing is performed up to the portion of the cutting groove 104, whereby the individual solid-state imaging devices are separated. Further, this step is not limited to CMP, and grinding, polishing, etching, or the like may be used.

  In this way, since they are separated after being packaged together, they are easy to manufacture and easy to handle.

  Further, since the edge portion is removed by dicing or laser evaporation without forming the groove portion 204 in advance on the glass substrate 201, separation is possible very easily.

  As described above, the structure in which the edge of the glass substrate 201 is located inside the edge of the silicon substrate 101 on which the CCD is mounted and the surface of the silicon substrate 101 is exposed is a simple process of evaporating with dicing or laser. It can be formed with high accuracy.

  In addition, since the glass substrate maintains the same thickness until the separation step, it is possible to reduce warpage and distortion.

(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described.
In the fourth embodiment, the cutting groove 104 is formed in advance in the silicon substrate 101 constituting the solid-state imaging device substrate 100, and CMP is performed until the cutting groove 104 is reached from the back surface side after bonding. Although the silicon substrate 101 is separated while being thinned, the present embodiment is characterized in that the silicon substrate 101 is separated without forming a cutting groove and remains as it is. Further, as in the fourth embodiment, the glass substrate 201 is bonded without forming the groove portion 204, and the edge portion is evaporated at the time of separation. Other parts are formed in the same manner as in the first embodiment.

That is, this joining and separation process is shown in FIGS. As shown in FIG. 8A, using a silicon substrate 101 as a starting material, a channel stopper layer is formed, a channel region is formed, and an element region 102 such as a charge transfer electrode is formed using a normal silicon process. To do. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.
Thereafter, as shown in FIG. 8B, alignment is performed by alignment marks formed on the peripheral edge of each substrate, and the sealing cover glass 200 is formed on the solid-state imaging device substrate 100 formed as described above. Are integrated by the adhesive layer 207 by heating. At this time, since neither the cutting groove nor the recess is formed in both the silicon substrate 101 and the glass substrate 201, the mechanical strength is high.

  Thereafter, as shown in FIG. 8C, as in the fourth embodiment, the periphery of the cutting line is evaporated from the back surface side of the glass substrate by dicing or laser, and the glass substrate 201 of each solid-state imaging device. Are adjusted and separated so that the edge of the substrate is located inside the edge of the silicon substrate 101 constituting the solid-state imaging device substrate 100.

Finally, as shown in FIG. 8D, the glass substrate 201 is cut with a diamond blade (grinding stone) and separated into individual solid-state imaging devices.
According to this method, it is possible to form a highly reliable device that is thicker than the solid-state imaging device obtained in the first embodiment.

(Sixth embodiment)
Next, a sixth embodiment of the present invention will be described.
In the fourth embodiment, the cutting groove 104 is formed in advance in the silicon substrate 101 constituting the solid-state imaging device substrate 100, and the separation is performed by performing CMP from the back surface side. Further, in the fifth embodiment, the silicon substrate 101 constituting the solid-state imaging device substrate 100 is formed in advance without forming the cutting groove 104, and after joining, it is cut with a diamond blade (grinding stone), The silicon substrate 101 is separated. In the present embodiment, an adhesive layer 302 is provided on the back side of the silicon substrate 101 so that the silicon substrate 101 does not have to be separated after the sealing cover glass 200 and the solid-state imaging device substrate 100 are bonded together. A dummy plate 301 made of a silicon substrate having a thickness of 50 to 700 μm is pasted, and after the pasting, a cutting groove 304 having a depth reaching the dummy plate 301 is formed. .

Therefore, in the separation step, the adhesive layer 302 can be softened and the dummy plate 301 can be removed.
Other parts are formed in the same manner as in the fourth and fifth embodiments.

  That is, this joining and separation process is shown in FIGS. Using the silicon substrate 101 as a starting material, a channel stopper layer is formed, a channel region is formed, and an element region 102 such as a charge transfer electrode is formed using a normal silicon process. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection. Thereafter, as shown in FIG. 9A, a dummy plate 301 made of a silicon plate having a thickness of 50 to 700 μm is attached to the back side of the silicon substrate 101 with an adhesive layer 302 interposed therebetween.

Thereafter, as shown in FIG. 9B, a cutting groove 304 is formed from the element formation surface side of the silicon substrate 101 using a diamond blade (grinding stone).
And as shown in FIG.9 (c), it aligned by the alignment mark (not shown) formed in the peripheral part of the solid-state image sensor substrate 100 and the cover glass 200 for sealing, and formed as mentioned above. The sealing cover glass 200 is placed on the solid-state imaging device substrate 100, and both are integrated by the adhesive layer 207 by heating. Here, the glass substrate 201 as the sealing cover glass 200 is obtained by patterning a silicon substrate formed on the glass substrate 201 in the same manner as in the steps of FIGS. 2A to 2C to form the spacer 203S. Used. The adhesive layer 207 is formed on the end surface of the spacer 203S. At this time, the cutting groove 304 is formed so as to penetrate the silicon substrate 101, but since it is fixed by the dummy plate 301, the mechanical strength is high.

  Thereafter, as shown in FIG. 9 (d), as in the fourth embodiment, the periphery of the cutting line is evaporated from the back side of the glass substrate by dicing or laser, and the glass substrate of each solid-state imaging device. It is adjusted and separated so that the edge of 201 comes to the inside of the edge of the silicon substrate 101 constituting the solid-state imaging device substrate 100.

  Further, as shown in FIG. 9E, the adhesive layer 302 on the back surface of the silicon substrate 101 is softened, and the dummy plate 301 is removed to separate the individual solid-state imaging devices. Here, it is desirable to select a material having a softening point lower than that of the adhesive layer 202 for bonding the spacer to the glass substrate 201 for the adhesive layer 302.

According to this method, since the solid-state image pickup device substrate 100 is diced on the dummy plate 301 prior to bonding, it is applied after bonding as compared with the solid-state imaging device obtained in the first embodiment. Less stress is required and manufacturing yield is improved. In addition, it is possible to improve the reliability of the solid-state imaging device.
In the fourth to sixth embodiments, the glass substrate may be cut by scribing or etching.

(Seventh embodiment)
Next, a seventh embodiment of the present invention will be described.
In the sixth embodiment, a dummy plate 301 made of a silicon substrate having a thickness of 50 to 700 μm is pasted on the back side of the silicon substrate 101 via an adhesive layer 302, and after the pasting, A cutting groove 304 having a depth reaching the dummy plate 301 is formed, and after bonding to the glass substrate 201, the adhesive layer 302 is softened in the step of separating into individual solid-state imaging elements. In this embodiment, the dummy plate 301 is separated from the glass substrate 201 with a thickness of 50 to 700 μm via the adhesive layer 402 on the back side. A dummy plate 401 is attached, and after the attachment, a recess 404 having a depth reaching the dummy plate 401 is formed. Then, in the step of separating into individual solid-state imaging elements after bonding to the glass substrate 201, the adhesive layer 402 is softened and the dummy plate 401 is removed to separate the elements. Other parts are formed in the same manner as in the sixth embodiment.

  As for the silicon substrate 101 constituting the solid-state imaging device substrate 100, a silicon substrate in which no cutting groove or dummy plate is formed in advance is used in the same manner as in the second and fourth embodiments, and finally a diamond blade (grinding stone) ).

That is, this joining and separation process is shown in FIGS.
First, as shown in FIG. 10A, a dummy plate 401 made of a glass substrate having a thickness of 50 to 700 μm is pasted on the back side of the glass substrate 201 via an adhesive layer 402, After the bonding, a silicon substrate 203 is further bonded through the adhesive layer 202, and the silicon substrate 203 is subjected to photolithography in the same manner as in the first embodiment described with reference to FIGS. The spacer 203S is formed by the etching method used.

Thereafter, as shown in FIG. 10B, similarly to the first embodiment, the region corresponding to the space between the solid-state imaging elements is selectively etched again, and the depth of the dummy plate 401 is reached. A recess 404 is formed. Further, it may be formed by half dicing.
Further, using the silicon substrate 101 as a starting material, a channel stopper layer is formed and a channel region is formed by using a normal silicon process, and an element region 102 such as a charge transfer electrode is formed. A wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection. And as shown in FIG.10 (c), it aligns with the solid-state image sensor substrate 100 formed in this way, and the alignment mark (not shown) formed in the peripheral part of the sealing cover glass 200, The sealing cover glass 200 with the dummy plate 401 is placed on the solid-state imaging device substrate 100 formed as described above, and both are integrated by the adhesive layer 207 by heating.

  Thereafter, as shown in FIG. 10D, the glass substrate 201 is separated by heating and softening the adhesive layer 402 to remove the dummy plate 401.

  Further, as shown in FIG. 10E, the solid-state imaging device substrate formed of the silicon substrate 101 is cut using a diamond blade (grinding stone) and separated into individual solid-state imaging devices.

  According to this method, the glass substrate 201 constituting the sealing cover glass 200 is separated by dicing or etching in advance on the dummy plate 401 prior to bonding, so the first embodiment. Compared with the glass substrate obtained by the above, less stress is applied after bonding, and the manufacturing yield is improved. In addition, it is possible to improve the reliability of the solid-state imaging device.

(Eighth embodiment)
Next, an eighth embodiment of the present invention will be described.
In the seventh embodiment, the silicon substrate 101 constituting the solid-state imaging device substrate 100 is bonded as it is without forming the cutting groove 104 in advance, and finally cut with a diamond blade (grinding stone). In the embodiment, a cutting groove 104 is formed in advance on a silicon substrate 101 constituting the solid-state imaging device substrate 100, and after bonding, CMP is performed from the back surface side until the cutting groove 104 is reached, thereby the silicon substrate 101. It is characterized in that it is separated while thinning. Other parts are formed in the same manner as in the seventh embodiment.

  That is, this joining and separation process is shown in FIGS. As shown in FIG. 11A, a silicon substrate 101 formed with a cutting groove 104 is used as a starting material, and a channel stopper layer is formed and a channel region is formed using a normal silicon process, and charge transfer electrodes, The element region 102 is formed. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.

  Thereafter, as shown in FIG. 11B, alignment is performed using alignment marks formed on the peripheral edge of each substrate, and the substrate is formed on the solid-state imaging device substrate 100 as in the seventh embodiment. The sealing cover glass 200 with the dummy substrate 401 is placed, and the two are integrated by normal temperature direct bonding. Here, the adhesive layer is formed by direct bonding without using the adhesive layer, but may be bonded by the adhesive layer 207.

  Thereafter, as shown in FIG. 11C, CMP (chemical mechanical polishing) is performed from the back surface side of the solid-state imaging device substrate 100, and the back surface side of the silicon substrate 101 is removed until it reaches the cutting groove 104.

  By this step, the solid-state image pickup device substrate can be individually separated simultaneously with the thinning. Here, instead of CMP, grinding, polishing, etching, or the like may be used.

  Thereafter, as shown in FIG. 11D, heating is performed to soften the adhesive layer 402, and the dummy substrate 401 is removed. By this step, it is easily separated and a solid-state imaging device is formed.

(Ninth embodiment)
Next, a ninth embodiment of the present invention will be described.
In the seventh embodiment, the silicon substrate 101 constituting the solid-state imaging device substrate 100 is bonded as it is without forming the cutting groove 104 in advance, and finally cut with a diamond blade (grinding stone). In the embodiment, a dummy plate is formed in advance on both the silicon substrate 101 constituting the solid-state imaging device substrate 100 and the glass substrate 201 constituting the sealing cover glass 200, and the cutting groove 104 and the groove portion 204 are formed in advance prior to bonding. In addition, after bonding, the adhesive layers 402 and 302 are softened and the dummy plates 301 and 401 are removed to separate them. Other parts are formed in the same manner as in the seventh embodiment.

  That is, this joining and separation process is shown in FIGS. As shown in FIG. 12 (a), a material in which a dummy plate 301 is bonded to a silicon substrate 101 is used as a starting material, and a channel stopper layer is formed, a channel region is formed using a normal silicon process, and a charge transfer electrode is formed. .. The element region 102 is formed. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.

Thereafter, as shown in FIG. 12B, the cutting groove 304 is formed so as to reach the dummy plate 301.
Further, the sealing cover glass 200 is also attached with the dummy plate 401 in the same manner as in the seventh and eighth embodiments, and the recess 404 is formed by etching or dicing.
Then, as shown in FIG. 12 (c), alignment is performed by alignment marks formed on the peripheral edge of each substrate, and on the solid-state imaging device substrate 100 with the dummy substrate 301, as in the seventh embodiment. The sealing cover glass 200 with the dummy substrate 401 thus formed is placed and heated, and both are integrated by the adhesive layer 207.

Thereafter, as shown in FIG. 12D, the adhesive layers 402 and 203 are softened, the dummy plates 301 and 401 are removed, and separation into individual solid-state imaging elements is possible.
Note that these adhesive layers 302 and 402 may have the same softening temperature and may be simultaneously softened.
Alternatively, after softening and removing one, it may be fixed by taping, and the other one may be softened and removed.
According to such a configuration, since no extra stress is applied after joining, damage to the solid-state imaging device can be reduced.

(Tenth embodiment)
Next, a tenth embodiment of the present invention will be described.
In the first to ninth embodiments, as shown in FIGS. 2A and 2B, an adhesive is applied to the glass substrate 201 when forming the sealing cover glass 200 on which the spacer 203S is formed. The silicon substrate 203 to be a spacer is attached to the silicon substrate 203, and the silicon substrate 203 is patterned by an etching method using photolithography and the cutting groove 204 is formed. In the present embodiment, FIG. As shown in FIG. 5B, the dummy plate 501 is used to etch the spacer 203S on the dummy plate, and thereafter, the dummy plate 501 is bonded to the glass substrate 201 via the adhesive layer 202. Other portions are formed in the same manner as in the above embodiment.

  That is, as shown in FIG. 13A, a silicon substrate 203 serving as a spacer is attached to a dummy plate 501 made of a silicon substrate via an adhesive layer 502 having a softening temperature of about 50 to 150 ° C. Then, the silicon substrate 203 is patterned by an etching method using photolithography to form a spacer 203S. Then, as shown in FIG.13 (b), the glass substrate 201 is stuck to the spacer 203S side through the adhesive bond layer 202 with a softening temperature of about 100-200 degreeC.

  After sticking the glass substrate 201 in this way, the adhesive layer 502 is softened by heating to a temperature (about 50 to 150 ° C.) at which the adhesive layer 502 softens without the adhesive layer 202 softening. The dummy plate 501 is removed, and the sealing cover glass 200 with a spacer is formed.

  According to this method, since it is not necessary to process the spacer on the glass substrate, it is possible to prevent the glass substrate 201 from being scratched and causing clouding. The adhesive layer 502 to which the dummy plate is attached only needs to be able to withstand the baking temperature in the photolithography process. Since the dummy plate 501 needs to be removed, the adhesive layer 202 for attaching the spacer 203S to the glass substrate 201 needs to have a sufficiently higher softening temperature than the adhesive layer 502.

  Further, when it is necessary to form a recess in the glass plate, the groove 204 may be formed as shown in FIG. 14 by dicing or etching prior to sticking. Further, after removing the dummy plate 501, the uneven portion may be formed by dicing or etching.

  The joining step and the cutting step are the same as the steps in FIGS. 3 to 6 described in the first to third embodiments.

(Eleventh embodiment)
Next, an eleventh embodiment of the present invention will be described.
In the first to tenth embodiments, the spacer 203S is formed separately and attached via an adhesive layer, but in this embodiment, the glass substrate 201 is formed by an etching method using photolithography. The spacer 206 is formed by forming the recess 205. Other portions are formed in the same manner as in the above embodiment.

That is, as shown in FIG. 15A, a glass substrate 201 is prepared.
And as shown in FIG.15 (b), the glass substrate provided with the spacer 206 is formed by forming the recessed part 205 with the etching method using photolithography.

  According to such a configuration, since the spacer 206 is integrally formed, the manufacturing is easy and there is no positional deviation, and there is no possibility that distortion occurs at the joint.

(Twelfth embodiment)
Next, a twelfth embodiment of the present invention will be described.
In the eleventh embodiment, the method for forming the sealing cover glass 200 in which the spacer 206 is integrally formed has been described. However, as shown in FIGS. 16A to 16C, the groove 204 is also etched. It is also possible to form with.

In this embodiment mode, the spacer 206 is formed integrally with the glass substrate 201 by forming the recess 205 by an etching method using photolithography. Then, by forming the groove portion 204, the groove portion 204 of the glass substrate is formed by etching so that the edge of the sealing cover glass 200 comes to the inner side than the edge of the solid-state imaging device substrate 100. Therefore, the generation of distortion is reduced and the separation process is facilitated.
That is, as shown in FIG. 16A, a glass substrate 201 is prepared.
Then, as shown in FIG. 16B, a recess 205 is formed in the glass substrate 201 by an etching method using photolithography.

Thereafter, as shown in FIG. 16C, the trench 204 is formed by further deep etching by an etching method using photolithography, and the spacer 206 is integrally formed.
These processing steps require two etchings because of different etching depths. However, a resist pattern to be a mask is formed in a two-layer structure, and after etching the groove 204 for spacer formation, an upper resist layer is formed. Only the pattern may be selectively removed, and etching may be performed using only the resist pattern on the lower layer side as a mask.

  Further, the joining and separating steps are the same as those shown in FIGS. 3 to 5 described in the first to third embodiments.

(Thirteenth embodiment)
Next, a thirteenth embodiment of the present invention will be described.
In the eleventh and twelfth embodiments, the method of forming the sealing cover glass 200 with the spacer 206 integrally formed has been described. However, as shown in FIGS. 17A to 17D, the groove 204 is formed. Alternatively, a spacer silicon substrate 203 may be attached to the glass substrate 201, and the spacer 203S may be formed by selectively removing the silicon substrate 203 by an etching method using photolithography. Other portions are formed in the same manner as the above-described embodiments of 11 and 12.

  In the present embodiment, the groove 204 is formed on the glass substrate 201 by an etching method using photolithography, the spacer 206 is integrally formed, and the edge of the sealing cover glass 200 is more than the edge of the solid-state imaging device substrate 100. A groove 204 of the glass substrate is formed by etching so as to be on the inside. Therefore, the generation of distortion is reduced and the separation process is facilitated.

That is, as shown in FIG. 17A, a glass substrate 201 is prepared.
Then, as shown in FIG. 17B, a groove 204 is formed in the glass substrate 201 by an etching method using a photolithography method.
Thereafter, as shown in FIG. 17C, a silicon substrate 203 as a spacer substrate is bonded via an adhesive layer 202.
Further, as shown in FIG. 17D, the spacer 203S is integrally formed by an etching method using photolithography.

Also by this method, it is possible to form the sealing cover glass 200 with a highly accurate and reliable spacer.
The joining and separating steps are the same as the steps shown in FIGS. 3 to 5 described in the first to third embodiments.

(Fourteenth embodiment)
Next, a fourteenth embodiment of the present invention will be described.
In the thirteenth embodiment, as shown in FIGS. 17A to 17D, a silicon substrate 203 serving as a spacer is attached to a glass substrate 201 via an adhesive, and etching using photolithography is performed. The silicon substrate 203 is patterned by the method to form the sealing cover glass 200. In the present embodiment, as shown in FIGS. 18A and 18B, a dummy plate 501 is used to form a dummy plate. The spacer 203S is patterned above, and thereafter, the spacer 203S is adhered to the glass substrate 201 on which the groove portion 204 is formed via the adhesive layer 202. Other portions are formed in the same manner as in the thirteenth embodiment.

  That is, the silicon substrate 203 serving as a spacer is attached to the dummy plate 501 made of a silicon substrate via the adhesive layer 502 having a softening temperature of about 50 to 150 ° C. Then, as shown in FIG. 18A, the silicon substrate 203 is patterned by an etching method using photolithography to form a spacer 203.

Then, as shown in FIG.18 (b), the glass substrate 201 which has the groove part 204 is stuck to the spacer 203S side through the adhesive bond layer 202 with a softening temperature of about 100-200 degreeC.
After the glass substrate 201 is attached in this manner, the dummy layer 501 is removed by heating to about 50 to 150 ° C. within a range where the adhesive layer 202 is not softened, and the dummy plate 501 is removed, as shown in FIG. As shown in FIG. 3, a sealing cover glass 200 with a spacer is formed.

  According to this method, since it is not necessary to process the spacer on the glass substrate, it is possible to prevent the glass substrate 201 from being scratched and causing clouding.

  The joining and separating steps are the same as those shown in FIGS. 3 to 5 described in the first to third embodiments.

(Fifteenth embodiment)
Next, a fifteenth embodiment of the present invention will be described.
In the twelfth to fourteenth embodiments, the manufacturing process of the sealing cover glass 200 with the spacer provided with the groove portion 204 for facilitating the separation process has been described. However, the fifteenth to seventeenth embodiments are described. Then, by sticking to the dummy plate 401 and forming the groove portion 204, the glass substrate itself is separated in advance prior to bonding, and after bonding, the dummy plate is removed by softening the adhesive layer 402. However, it is characterized by being separated into individual solid-state imaging devices. Other portions are formed in the same manner as in the fourteenth embodiment.

  In this embodiment, in the embodiment shown in FIGS. 16A to 16C, the groove 204 is formed in the glass substrate of the spacer-integrated sealing cover glass so that the glass substrate can be easily separated. However, as shown in FIG. 19, a dummy plate 401 made of a glass substrate is used via an adhesive layer 402, and the dummy plate can be easily separated by removing the dummy plate.

  A glass plate is used as a starting material, and after attaching the dummy plate, the groove 204 and the spacer 206 are formed by an etching method using photolithography.

  According to such a configuration, it is only necessary to soften the adhesive layer 402 by heating at the time of division, and the division can be performed very easily.

  The joining and separating steps are the same as those described in the seventh to ninth embodiments.

(Sixteenth embodiment)
Next, a sixteenth embodiment of the present invention will be described.
In the present embodiment, the glass substrate 201 of the type in which the spacer 203S is adhered to the glass plate with the recesses described in the thirteenth embodiment is adhered to the dummy plate 401 and the groove portion 204 is formed. The glass substrate itself is separated prior to bonding, and after bonding, the adhesive layer 402 is softened to remove the dummy plate and separate into individual solid-state imaging elements. Other portions are formed in the same manner as in the thirteenth embodiment.

In this embodiment, as shown in FIGS. 20 (a) and 20 (b), a dummy plate is formed on the spacer-integrated glass substrate of the embodiment shown in FIGS. 401 is attached to form a groove 204.
A glass plate is used as a starting material. After the dummy plate is pasted, the groove 204 having a depth reaching the dummy plate and the spacer 203S are formed in the same manner as in the thirteenth embodiment.

  That is, as shown in FIG. 20A, the dummy substrate 401 is attached to the glass substrate 201 through the adhesive layer 402.

  After that, as shown in FIG. 20B, the glass substrate 201 is etched using photolithography to form a groove that reaches the dummy substrate 401 from the surface of the glass substrate 201.

  Then, as shown in FIG. 20 (c), a silicon substrate 203 for spacers is stuck through the adhesive layer 202.

  Then, as shown in FIG. 20D, the silicon substrate 203 is selectively removed by an etching method using photolithography to form a spacer 203S.

  According to such a configuration, it is only necessary to soften the adhesive layer 402 by heating at the time of dicing after bonding to the solid-state image pickup device substrate 100, and it can be divided very easily.

  The joining and separating steps are the same as those described in the seventh to ninth embodiments.

(Seventeenth embodiment)
Next, a seventeenth embodiment of the present invention will be described.
In the present embodiment, the spacer 203S patterned on the dummy plate 501 is replaced with the glass substrate 201 of the type in which the spacer 203S is adhered to the glass plate with recesses described in the fourteenth embodiment (FIG. 18). By sticking to 401 and forming the groove portion 204, the glass substrate itself is separated in advance prior to joining, and after joining, the adhesive layer 402 is softened to remove the dummy plate and remove individual solids. It is characterized by being separated into an image sensor. Other portions are formed in the same manner as in the fourteenth embodiment.

In this embodiment, as shown in FIGS. 21A to 21C, an adhesive layer 402 is provided on the spacer-attached glass substrate of the embodiment shown in FIGS. A dummy plate 401 is attached.
A glass plate is used as a starting material. After the dummy plate is pasted, the groove 204 having a depth reaching the dummy plate and the spacer 203S are formed in the same manner as in the fifteenth embodiment.
That is, after a silicon substrate 203 serving as a spacer is attached to a dummy plate 501 made of a silicon substrate via an adhesive layer 502, photolithography is applied to the silicon substrate 203 as shown in FIG. The spacer 203S is formed by performing patterning by the etching method.

Thereafter, as shown in FIG. 21B, a glass substrate 201 having a groove 204 formed so as to reach the dummy plate 401 is attached to the spacer 203S side through the adhesive layer 202.
After the glass substrate 201 is adhered in this manner, the adhesive layer 502 is softened to remove the dummy plate 501, and as shown in FIG. 21C, a sealing cover glass 200 with a spacer is formed. The
According to such a configuration, the dummy plate 401 can be easily removed simply by softening the adhesive layer 402 by heating at the time of division, and can be divided very easily.

The joining and separating steps are the same as those described in the seventh to ninth embodiments.
Is possible. Other portions are formed in the same manner as in the above embodiment.

  In the above-described embodiment, a method of performing bonding between the glass substrate constituting the sealing cover glass and the spacer and bonding between the solid-state imaging device substrate and the sealing cover glass using an adhesive layer or anodic bonding. However, in all the embodiments, when the surface of the solid-state imaging device substrate is made of Si or metal, the surface-activated room-temperature bonding is appropriately performed without using an adhesive. You can also. When using an adhesive layer, not only a UV adhesive but also a thermosetting adhesive or a thermosetting combined UV curable adhesive may be used as the adhesive layer.

  Further, as described in the first embodiment, in all the embodiments, as a spacer, in addition to a silicon substrate, 42 alloy, metal, glass, photosensitive polyimide, polycarbonate resin, and the like can be appropriately selected.

  In addition, when the solid-state imaging device substrate and the sealing cover glass are joined using the adhesive layer, it is preferable that the melted adhesive layer does not flow out by forming a liquid reservoir. The same applies to the joint between the spacer and the solid-state imaging device substrate or the sealing cover glass. The melted adhesive layer flows out by forming a concave or convex portion in the joint and forming a liquid reservoir. Do not do it.

  In the above-described embodiment, the element formed with the cut groove is separated into individual elements by CMP up to the position of the cut groove. However, grinding, polishing, whole surface etching, or the like can also be used.

  Moreover, in the said embodiment, when bonding of a glass substrate and a spacer is required, you may be made to perform by ultraviolet curing resin, thermosetting resin, these combination, or semi-hardened adhesive application | coating. In forming this adhesive, it is possible to appropriately select supply with a dispenser, screen printing, stamp transfer, and the like.

  In addition, the examples described in the embodiments can be mutually modified within a range applicable to all forms.

FIGS. 1A to 1D are a cross-sectional view and a main part enlarged cross-sectional view showing a solid-state imaging device formed by the method of the first embodiment of the present invention. 2A to 2D are views showing a manufacturing process of the solid-state imaging device according to the first embodiment of the present invention. 3A to 3C are diagrams showing a manufacturing process of the solid-state imaging device according to the first embodiment of the present invention. It is a figure which shows the modification of 1st Embodiment. FIGS. 5A to 5D are diagrams showing a manufacturing process of the solid-state imaging device according to the second embodiment of the present invention. FIGS. 6A to 6E are diagrams showing manufacturing steps of the solid-state imaging device according to the third embodiment of the present invention. 7A to 7D are views showing a manufacturing process of the solid-state imaging device according to the fourth embodiment of the present invention. 8A to 8D are diagrams showing manufacturing steps of the solid-state imaging device according to the fifth embodiment of the present invention. FIGS. 9A to 9E are diagrams showing manufacturing steps of the solid-state imaging device according to the sixth embodiment of the present invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 7th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 8th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 9th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 10th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 10th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 11th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 12th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 13th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 14th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of 15th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 16th Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state imaging device of the 17th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Solid-state image sensor board | substrate 101 Silicon substrate 102 Solid-state image sensor 200 Sealing cover glass 201 Glass substrate 203S Spacer

Claims (9)

A semiconductor substrate having a solid-state image sensor formed on the surface;
A translucent member facing the light receiving region of the solid-state imaging element with a gap therebetween;
An adhesive is formed on the semiconductor substrate and the translucent member in order to maintain a distance between the semiconductor substrate and the translucent member, which is made of a material having a thermal expansion coefficient between the semiconductor substrate and the translucent member. A solid-state imaging device in which a rough surface is formed on a bonding surface of the spacer facing at least one of the semiconductor substrate and the light-transmitting member.
An imaging element forming step of forming a plurality of the solid-state imaging elements on a semiconductor substrate surface;
A sealing cover forming step of forming a sealing cover in which the spacers for the plurality of solid-state imaging elements are bonded to a plate of a translucent member;
Bonding the semiconductor substrate and the sealing cover, and bonding the spacer to a position surrounding each solid-state imaging device formed on the surface of the semiconductor substrate;
A separation step of separating the joined body obtained in the joining step into individual solid-state imaging devices,
The sealing cover forming step includes a step of adhering a spacer substrate having a rough surface formed on at least one surface to a plate of the translucent member or a dummy plate, and the spacers for a plurality of solid-state imaging devices Forming a resist pattern at a spacer formation position of the spacer substrate and etching the spacer substrate. A manufacturing method of a solid-state imaging device according to claim 1,
After the sealing cover forming step, the spacer substrate is adhered to the surface of the light transmissive member, and the spacer substrate is etched to form the spacers for a plurality of solid-state imaging devices. Etching a region on the spacer side of the translucent member not included in the solid-state imaging device to a predetermined depth to form an inter-element groove,
  The method for manufacturing a solid-state imaging device, wherein the separation step includes a step of polishing the light-transmissive member from the back surface side opposite to the semiconductor substrate side until reaching the inter-element groove. A manufacturing method of a solid-state imaging device according to claim 2, wherein the separation step, the manufacturing method of the solid-state imaging device comprising the step of separating by cutting the semiconductor substrate. A method of manufacturing a solid-state imaging device according to claim 2 ,
Said imaging device forming step includes forming a cutting groove for separating the solid-state imaging device into a plurality of said solid semiconductor substrate surface of the imaging element Ru is formed,
The method for manufacturing a solid-state imaging device , wherein the separation step includes a step of polishing the semiconductor substrate from the back side opposite to the sealing cover side until reaching the cutting groove and separating the semiconductor substrate into individual solid-state imaging devices . A manufacturing method of a solid-state imaging device according to claim 1 ,
In the separation step, the region of the translucent member that is not finally included in the solid-state imaging device of the joined body obtained in the joining step is diced or lasered from the back side opposite to the semiconductor substrate side. And a step of cutting and separating the semiconductor substrate into individual solid-state imaging devices. A manufacturing method of a solid-state imaging device according to claim 1 ,
In the sealing cover forming step, the spacer substrate is attached to the front surface of the translucent member having a dummy plate attached to the back surface, and the spacer substrate is etched to form a plurality of solid-state imaging devices. Forming the spacer, and forming a recess having a depth reaching the dummy plate in a region of the translucent member that is not finally included in the solid-state imaging device,
A method of manufacturing a solid-state imaging device, wherein the separation step includes a step of removing the dummy plate from the light-transmissive member by heating, and a step of cutting and separating the semiconductor substrate into individual solid-state imaging devices . A manufacturing method of a solid-state imaging device according to claim 1,
In the sealing cover forming step, the spacer substrate is adhered to the surface of the dummy plate via a first adhesive, and the spacer substrate is etched to form the spacers for a plurality of solid-state imaging devices. And attaching the plate of the translucent member to the side of the spacer opposite to the side to which the dummy plate is bonded via a second adhesive having a softening temperature higher than that of the first adhesive. Heating the first adhesive material to a temperature at which the first adhesive material softens without softening the second adhesive material, and removing the dummy plate from the spacer; and finally, the transparent material not included in the solid-state imaging device. Etching the region on the spacer side of the optical member to a predetermined depth to form an inter-element groove,
The method for manufacturing a solid-state imaging device, wherein the separation step includes a step of polishing the light-transmissive member from the back surface side opposite to the semiconductor substrate side until reaching the inter-element groove. A manufacturing method of a solid-state imaging device according to claim 7, wherein the separation step, the manufacturing method of the solid-state imaging device comprising the step of separating by cutting the semiconductor substrate. A method of manufacturing a solid-state imaging device according to claim 7 ,
Said imaging device forming step includes forming a cutting groove for separating the solid-state imaging device into a plurality of said solid semiconductor substrate surface of the imaging element Ru is formed,
The method for manufacturing a solid-state imaging device , wherein the separation step includes a step of polishing the semiconductor substrate from the back side opposite to the sealing cover side until reaching the cutting groove and separating the semiconductor substrate into individual solid-state imaging devices .

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