JP2006295481A - Semiconductor imaging apparatus and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor imaging apparatus including a transparent member fitted only to an upper part of an imaging region in a semiconductor imaging element that realizes downsizing and a low-profile without degrading the image quality. <P>SOLUTION: The semiconductor imaging apparatus 1 includes: a semiconductor imaging element 10 provided with an imaging region 30, a peripheral circuit region 35, an electrode region 50, wherein a plurality of microlenses are provided at the imaging region 30; and the transparent member 20 bonded onto the imaging region 30 in the semiconductor imaging element 10. The transparent member 20 has a hollow part 60 having a planar shape greater than that of the imaging region 30, a height not in contact with the microlenses at an adhering face bonded to the semiconductor imaging element 10 and an outward form smaller than that of the peripheral circuit region 30, and the semiconductor imaging element 10 and the transparent member 20 are bonded to each other such that the hollow part 60 is located on the imaging region 30 in the semiconductor imaging element 10. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a thin and small semiconductor imaging device in which a transparent member is directly attached to an imaging region of a semiconductor imaging device, and a manufacturing method for realizing the same.

  In recent years, there has been a growing demand for high-density mounting of semiconductor components as electronic devices become smaller, thinner and lighter. Among them, coupled with the high integration of semiconductor imaging devices due to advances in microfabrication technology, from the technology to mount semiconductor elements in conventional large and thick packages, the technology to mount directly on electronic devices in the state of semiconductor elements, That is, a chip mounting technique has been proposed. This tendency is no exception in semiconductor imaging devices.

  Conventionally, a method for manufacturing a lightweight semiconductor imaging device at low cost has been proposed. As this structure, for example, the upper surface of the low refractive index transparent material is covered with a low refractive index transparent material whose refractive index is lower than that of the microlens material above the microlens formed on the light receiving portion on the upper surface of the semiconductor imaging device. And the side surface is covered with a high-hardness transparent material harder than the low-refractive-index transparent material, and the semiconductor image pickup device is packaged with a transparent resin through the high-hardness transparent material. In such a semiconductor imaging element, the microlens is covered with a low refractive index transparent material that is uniformly formed over the entire surface, so the microlens does not impair the lens function due to the difference in refractive index between the two. The incident light can be effectively condensed and guided to the light receiving surface of the semiconductor imaging device.

  In the manufacturing method, first, a layer of a low refractive index transparent material such as a fluororesin is formed around the microlens of the semiconductor imaging element by using a photoetching technique or the like, and then from above the low refractive index transparent material layer. After applying a high-hardness transparent material such as acrylic and curing the high-hardness transparent material while covering the upper surface and all sides of the low-refractive-index transparent material, unnecessary parts are photoetched, and then a transparent resin such as an epoxy resin Then, a semiconductor imaging device is obtained by packaging with a resin mold. In such a method, in the transparent resin packaging step, the transparent resin is injected under the condition of hundreds of degrees Celsius and 1.5 to 2 atmospheres. At this time, by providing a transparent material with high hardness from acrylic or the like, the transparent material having a low refractive index made of fluororesin or the like is not affected by thermal and mechanical effects, and deformation of the transparent material with a low refractive index is not caused. This can be prevented (see, for example, Patent Document 1).

  Furthermore, a semiconductor imaging device and a manufacturing method that can be easily manufactured and realize a high yield have been proposed. In this structure, a microlens is provided in the imaging region of the semiconductor imaging device, and a plurality of bumps are provided on the imaging surface side. Each bump is connected to a lead, a cover glass is bonded to the imaging surface side with an adhesive, and a wall portion for preventing the adhesive from flowing into the imaging area is formed around the imaging area. By adopting such a structure, a small and thin semiconductor imaging device can be realized.

On the other hand, in the manufacturing method, first, a semiconductor imaging device having a rectangular imaging region is prepared, and then an uncured ultraviolet curable resin is applied to the imaging region of the semiconductor imaging device, and then pressed against a transparent mold for ultraviolet irradiation. To cure. By this curing, a microlens array in the imaging region and a wall portion having a height higher than that of the microlens around the imaging region are simultaneously formed. Next, after forming bumps on the electrode terminals of the semiconductor imaging device and connecting outer leads to the bumps, an adhesive is applied to the outer periphery of the wall and a cover glass is disposed on the upper surface of the wall using the wall as a spacer. Glue with adhesive. Next, a semiconductor imaging device is obtained by covering the lead embedded portion and the side and bottom surfaces of the semiconductor imaging element with a coating layer made of resin molding. In such a method for manufacturing a semiconductor imaging device, when the cover glass is bonded to the semiconductor imaging element, the wall can prevent the adhesive from flowing into the imaging region. As a result, the yield can be improved (see, for example, Patent Document 2).
JP-A-5-206430 JP 2001-157664 A

  In the structure disclosed in Patent Document 1, the entire semiconductor image pickup device including the upper part of an acrylic resin microlens array formed in the image pickup region is covered with a high-hardness transparent material made of acrylic resin. Inside the high-hardness transparent material, the surface of the microlens is covered with a fluororesin having a lower refractive index than the acrylic resin constituting the microlens. Such a semiconductor image pickup device is assembled into a lead frame, and is integrally molded with a transparent epoxy resin and packaged. Thus, since it is difficult to chip-mount a structure having a lead frame and a transparent epoxy resin, there is a problem in that it cannot be reduced in size and thickness.

  Furthermore, in the microlens upper layer, the resins are laminated in the order of fluororesin, acrylic resin, and epoxy resin. The fluororesin has very few functional groups and is difficult to adhere to other resins. Even if it is bonded to another resin, it is easily peeled off by an external force. Moreover, the linear expansion coefficient of fluororesin is larger than that of acrylic resin and epoxy resin. Therefore, when the semiconductor imaging device is placed in a low-temperature environment, a gap is generated at the interface between the acrylic resin constituting the microlens surface and the high-hardness transparent material and the fluororesin constituting the low-refractive-index transparent material. Condensation will occur. On the other hand, when placed in a high temperature environment, the volume expansion of the fluororesin constituting the low refractive index transparent material is larger than that of the acrylic resin of the high hardness transparent material covering the periphery thereof. Therefore, as a result of the volume expansion of the fluororesin, the surface of the acrylic resin constituting the high-hardness transparent material is deformed, resulting in distortion in imaging. Furthermore, when volume expansion occurs remarkably, an internal crack is induced in the epoxy resin of the molded body, and the quality deteriorates.

  On the other hand, in the structure disclosed in Patent Document 2, when an acrylic resin-made microlens array is formed in the imaging region, an uncured ultraviolet curable resin is applied, and a transparent mold is pressed from above to apply ultraviolet rays. To obtain the microlens array and the wall at the same time. In this structure, since the outer leads are formed, it is difficult to realize a reduction in size and thickness as compared with a chip-mounted semiconductor imaging device. Further, in the method of irradiating ultraviolet rays by pressing a transparent mold on the cured ultraviolet curable resin, it is difficult to accurately align the fine pixels in the imaging region and the transparent mold. Furthermore, bubbles are taken in at the interface between the uncured ultraviolet curable resin and the transparent mold, resulting in a microlens having bubbles in the pixels of the imaging region, resulting in a problem that the image quality is deteriorated.

  The present invention provides a small and thin semiconductor imaging device at a low cost without degrading image quality by providing means for collectively manufacturing and bonding transparent members attached only above an imaging region in a semiconductor imaging device. It aims to be realized.

  In order to solve the above problems, a semiconductor imaging device according to an aspect of the present invention includes an imaging region, a peripheral circuit region, and an electrode region, and a semiconductor imaging device including a plurality of microlenses in the imaging region, A transparent member that covers the imaging region of the semiconductor imaging device, and the transparent member has a planar shape larger than the imaging region on the surface facing the semiconductor imaging device and does not contact the microlens. The semiconductor imaging device and the transparent member are bonded so that the hollow imaging portion has an outer shape smaller than the peripheral circuit region, and the hollow portion is disposed on the imaging region of the semiconductor imaging device. Has been.

  With such a configuration, a small and thin semiconductor imaging device can be realized. Furthermore, since there is an air layer in the space formed by the microlens in the imaging region and the hollow portion of the transparent member, the light collection efficiency of the microlens is not hindered.

  In the above configuration, the transparent member may further include an outer frame portion disposed in an outer peripheral region of the hollow portion, and the outer frame portion and the peripheral circuit region in the semiconductor imaging element may be bonded. .

  In the above configuration, the transparent member and the semiconductor imaging element may be bonded by low melting point solder. Furthermore, the material of the transparent member may be at least one of glass, amorphous quartz, crystal, and transparent resin. Further, the transparent member has a flat plate made of any one of glass, amorphous quartz, and quartz having an optical flat surface (flat surface) adhered to the inner surface of the hollow portion of the transparent resin and the transparent resin with a transparent adhesive. It may be a configuration. The “optical flat surface” refers to a surface that has been flattened so that the service rate and refractive index are uniform.

  According to one embodiment of the present invention, there is provided a method for manufacturing a semiconductor imaging device, an imaging region in which a plurality of microlenses are formed, a peripheral circuit region disposed on an outer periphery of the imaging region, and an electrode region disposed on an outer periphery of the peripheral circuit region. A semiconductor image pickup device having a plurality of semiconductor image pickup devices arranged on a semiconductor substrate across a dicing lane, a hollow portion, and an outer frame arranged in an outer peripheral region of the hollow portion A step (b) of producing a transparent member array in which a transparent member having a portion is divided by a separation groove provided on the same surface as the hollow portion, and a plurality of transparent member arrays are disposed; and steps (a) and (b) ), The step (c) of bonding and fixing the peripheral circuit region in the semiconductor imaging device array and the outer frame portion in the transparent member array, and the transparent member array after the step (c). (D) separating the transparent members individually from the opposite side of the surface on which the hollow portion and the separation groove are provided to a thickness at which the separation groove is exposed, After (d), the process surface of the transparent member is mirror-finished (e), and after the step (d), the dicing lane of the semiconductor image pickup device array is diced so that the transparent member is bonded and fixed. And (f) dividing the semiconductor image pickup device thus obtained into individual pieces.

  By this method, if the transparent member array is thinly processed by polishing or the like until the separation groove is exposed in a state where the transparent member array is bonded and fixed to the semiconductor image pickup device array, the image pickup area of the semiconductor image pickup device is collectively protected. A transparent member can be formed reliably. Thereafter, the semiconductor imaging device can be easily formed by performing normal dicing. As a result, the manufacturing method can be simplified and the cost can be reduced without degrading the image quality of the semiconductor imaging device, and the apparatus can be made smaller than before.

  The method further includes the step of forming an adhesive layer on the peripheral circuit region in the semiconductor imaging device array after the step (a) and before the step (c). ), The adhesive fixing may be performed by the adhesive layer.

  Further, in the above method, the step (b) includes a step (g) of forming the separation groove deeper than the hollow portion and wider than the dicing lane at a position corresponding to the dicing lane in the transparent substrate. ). At this time, the step (b) may further include a step of forming a first metal layer on a portion of the transparent base material located at an edge of the hollow portion. At this time, after the step (a) and before the step (c), a second metal layer is formed on the peripheral circuit region in the semiconductor image sensor array, and the step (c) ), The adhesive fixing may be performed by joining the first metal layer and the second metal layer with solder.

  In the above method, in the step (b), the separation groove may be formed by etching.

  In the above method, in the step (b), the separation groove may be formed by dicing.

  Further, in the above method, in the step (b), the transparent resin is molded using a resin molding die, thereby having a planar shape larger than the imaging region and having a height that does not contact the microlens. The transparent member array having a hollow portion and the separation groove deeper than the hollow portion and wider than the dicing lane may be formed.

  The method may further include a step of bonding a flat plate transparent member on the inner surface of the hollow portion in the transparent member array after the step (b) and before the step (c). .

  The method for manufacturing a semiconductor image pickup device according to the present invention is a method of bonding and fixing a transparent member array in the state of the semiconductor image pickup device array, and then separating and dicing the transparent member array, and forming the transparent member and applying it to the semiconductor image pickup device array. Since the bonding can be performed collectively, the manufacturing process can be greatly simplified. In addition, the semiconductor imaging device manufactured in this way can be reduced in size and thickness, and does not hinder the light collection efficiency by the microlens. Therefore, a high-quality semiconductor imaging device can be realized at low cost.

  Below, each embodiment which actualized this invention is described in detail, referring FIGS.

  In addition, the thickness, length, etc. of each member shown to these figures are examples, Comprising: It may differ from the shape of an actual member. In addition, the number of electrodes on the semiconductor image sensor is also a quantity that can be easily illustrated, and may be different from the actual number.

(First embodiment)
Hereinafter, a semiconductor imaging device according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic perspective view showing the overall configuration of the semiconductor imaging device according to the first embodiment. FIG. 2A is a schematic plan view for explaining the shape of the semiconductor imaging device in the first embodiment, and FIG. 2B is a cross-sectional view taken along the line AA in FIG. FIG.

  As shown in FIG. 1 and FIGS. 2A and 2B, in the semiconductor imaging device 1 of this embodiment, the semiconductor imaging device 10 includes an imaging region 30, a peripheral circuit region 35, an external circuit, and an electrical signal. An input / output unit and a power supply unit electrode 50 for transmission and reception are provided.

  Further, the first transparent member 20 is made of glass or the like having both optical surfaces, and has a hollow portion 60 on one surface thereof (surface on the side in contact with the semiconductor imaging device 10). The planar dimension of the hollow portion 60 is at least larger than the imaging region 30 of the semiconductor imaging device 10 and the height is higher than the microlens (not shown) formed in each pixel of the imaging region 30, and around the hollow portion 60. The outer dimension of the outer frame 65 (shown in FIGS. 2A and 2B) is smaller than the arrangement region of the electrodes 50 of the semiconductor image sensor 10.

  The outer frame 65 of the first transparent member 20 is bonded and fixed on the surface of the peripheral circuit region 35 with, for example, an ultraviolet curable adhesive 40 made of resin. As a result, the imaging region 30 can be disposed in the hollow portion 60 of the first transparent member 20, and the imaging region 30 can be covered with the first transparent member 20.

  Next, the structure of each member will be described in detail.

  First, one of the semiconductor image pickup devices 10 in the group of semiconductor image pickup devices formed vertically and horizontally on the main surface of the semiconductor substrate 110 of the present embodiment is a pixel in which pixels including color filters and microlenses are two-dimensionally arranged. A CCD-type or CMOS-type imaging region 30 composed of effective pixel groups in the region, and a peripheral circuit region 35 arranged on the outer periphery of the imaging region 30 to process electric signals from the pixel groups and transfer them to the digital signal processing circuit And an electrode which is disposed on the outer periphery of the peripheral circuit region 35, that is, on the outermost periphery of the semiconductor imaging device 10, and serves as a connection part for transmitting and receiving electrical signals between the peripheral circuit region 35 and an external device (not shown). 50.

  At this time, in the peripheral circuit region 35, an area sufficient to bond the bottom surface of the outer frame 65 of the first transparent member 20 is secured in advance. Here, a silicon substrate is used as the semiconductor substrate 110. However, in the present invention, a semiconductor substrate made of another single atom or compound may be used.

  Moreover, in the 1st transparent member 20 arrange | positioned through the air layer (hollow part 60) on the imaging area | region 30 of the semiconductor image pick-up element 10, both surfaces (upper surface and lower surface) have an optical plane. The outer dimension of the first transparent member 20 is a size that fits in the center side of the arrangement region of the electrode 50 in the semiconductor imaging device 10. A hollow portion 60 surrounded by an outer frame 65 is provided on the lower surface of the first transparent member 20. In the hollow portion 60, the bottom surface is finished as an optical plane, the dimensions are such that the vertical and horizontal dimensions are located on the outer periphery of the imaging region 30 of the semiconductor imaging device 10, and the height is formed in a pixel group in the imaging region 30. The dimension is higher than the height of the microlens. At this time, the surface of the first transparent member 20 located outside the hollow portion 60 and the surface constituting the bottom surface of the hollow portion 60 are formed to be parallel with high accuracy. The material of the first transparent member 20 includes high-purity glass that does not contain a radioactive element such as uranium or thorium. In the present invention, however, the first transparent member 20 is specified to add a function as amorphous quartz or a filter. A crystal having a crystal plane of

  Further, the ultraviolet curable adhesive 40 applied to adhere the first transparent member 20 onto the surface of the peripheral circuit region 35 of the semiconductor imaging device 10 is made of an acrylic resin or an epoxy resin containing a photoreaction initiator. With this ultraviolet curable adhesive 40, the semiconductor imaging device 10 and the first transparent member 20 are bonded and fixed. Here, a photo-curing type is used as the ultraviolet curable adhesive 40, but it may be a thermo-curing type that cures in a temperature range that does not deteriorate surrounding components such as a microlens.

  The semiconductor image pickup device 10 having the above configuration is formed on a substrate (not shown) on which a bump (not shown) is formed on the electrode 50 and a semiconductor image pickup device connection terminal (not shown) is formed. Mounted on top. At this time, the semiconductor image sensor connection terminal and the semiconductor image sensor 10 are joined by, for example, an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method. Alternatively, after the semiconductor image sensor 10 is bonded on the substrate with an adhesive or the like, the electrode 50 on the surface of the semiconductor image sensor 10 and the semiconductor image sensor connection terminal of the substrate may be connected by wire bonding. Thereby, the semiconductor imaging device 1 of this embodiment is obtained.

  The semiconductor imaging device 1 described above can be reduced in size as compared with the semiconductor imaging device in which the semiconductor imaging element 10 is housed in a package, and can be thinned because the first transparent member 20 is directly attached to the semiconductor imaging device 10.

  Next, a method for manufacturing the first transparent member 20 in the semiconductor imaging device of the present embodiment will be described with reference to FIGS. 3 (a) to 3 (d) and FIGS. 4 (a) and 4 (b). Here, a method of manufacturing the first transparent member array 100 in which a plurality of the first transparent members 20 shown in FIG. 1 and FIGS. 2A and 2B are arranged will be described. In addition, the 1st transparent member array 100 is cut out for every 1st transparent member 20 later, and is separated into pieces. FIGS. 3A to 3D are cross-sectional views showing a process of manufacturing the first transparent member array in the first embodiment.

  In the manufacturing method of this embodiment, first, in the process shown in FIG. 3A, high-purity glass having a thickness of 400 μm, flatness of both surfaces within 5 μm, visible light transmittance of 90% or more, and containing no uranium or thorium. The 1st transparent base material 70 which consists of etc. is prepared. For convenience of explanation, the thickness of the first transparent substrate 70 is 400 μm, but may have other thickness. In this case, the thickness is preferably 100 μm to 500 μm.

  Next, in the step shown in FIG. 3B, after the hollow portion 60 is formed, the inside and the periphery of the hollow portion 60 in the first transparent substrate 70 are covered with the photoresist 80a, and the opposite in the first transparent substrate 70 is performed. The side surface is covered with a non-photosensitive resist film 80b. Thereafter, a portion of the photosensitive photoresist 80a located between the hollow portions 60 is removed. In this step, a surface protective sheet (not shown) may be formed on the first transparent substrate 70, and a photosensitive photoresist 80a may be formed thereon. In that case, the exposed surface protection sheet may be removed after removing the photosensitive photoresist 80a in the portion located between the hollow portions 60. In addition, as the non-photosensitive photoresist 80b, a material in which a light-shielding pigment is blended may be used, or a low-reflection metal thin film may be used.

  Next, in the step shown in FIG. 3C, dry etching using a fluorine compound gas is performed on the first transparent substrate 70 using the photoresist 80a as a mask. Thus, the first transparent member peripheral groove 90 having a depth of 250 μm to 300 μm is formed. This groove serves as a cutting line when the first transparent member array 100 is cut out into individual pieces. Note that the etching for forming the first transparent member peripheral groove 90 may be performed by wet etching halfway and finished by dry etching.

  Finally, in the step shown in FIG. 3D, the photoresists 80a and 80b on both surfaces of the first transparent substrate 70 are removed by a removing solution or ashing. By passing through the above processes, the 1st transparent member array 100 in which the 1st transparent member 20 was formed in the length and breadth on the 1st transparent base material 70 surface is obtained.

  Fig.4 (a) is a schematic plan view which shows the shape of the 1st transparent member array in 1st Embodiment, Comprising: FIG.4 (b) is a BB line | wire among the structures shown to Fig.4 (a). It is a figure which shows the cross section along line.

  Next, a manufacturing method of the semiconductor imaging device 10 in the semiconductor imaging device of the present embodiment will be described. Here, a method of forming a semiconductor image sensor array 240 (shown in FIGS. 5A and 5B) in which a plurality of semiconductor image sensors 10 shown in FIGS. 1 and 2A and 2B are arranged will be described. .

  FIG. 5A is a schematic plan view showing the shape of the semiconductor image sensor array in the first embodiment, and FIG. 5B shows a CC line in the structure shown in FIG. It is a figure which shows the cross section along. The semiconductor image sensor array 240 is later cut out into individual pieces for each semiconductor image sensor 10. As shown in FIG. 5A, in the semiconductor image sensor array 240, the semiconductor image sensor 10 surrounded by the dicing lane 230 is arranged vertically and horizontally on the semiconductor substrate 110.

  The semiconductor image sensor array 240 is manufactured by performing a combination of fine processing techniques such as metal or dielectric film formation, photolithography, ion implantation, etching, and diffusion on the wafer. Thereby, the shape of the semiconductor image sensor array 240 in which the semiconductor image sensor 10 having the CCD type or CMOS type image pickup region 30 is formed vertically and horizontally is obtained. In addition, since this manufacturing method itself can be performed by a well-known method, illustration of a manufacturing process is abbreviate | omitted. In the layout of the semiconductor imaging device 10 according to the present embodiment, the peripheral circuit region 35 disposed between the imaging region 30 and the region where the electrode 50 is formed has a size that allows the first transparent member 20 to be bonded.

  Next, a method of bonding the first transparent member array 100 and the semiconductor image pickup device array 240 to separate them will be described with reference to FIGS. FIGS. 6A to 6G are cross-sectional views showing a method of bonding the first transparent member array and the semiconductor image sensor array in the first embodiment.

  In this method, first, the semiconductor image sensor array 240 is prepared in the step shown in FIG.

  Next, in the step shown in FIG. 6B, an appropriate amount of the ultraviolet curable resin adhesive 40 is applied on the peripheral circuit region 35 by a drawing method with a fine nozzle (not shown). At this time, the ultraviolet curable resin adhesive 40 is applied in a layout corresponding to the shape of the bottom surface of the outer frame 65 (shown in FIG. 6C, etc.) of the first transparent member array 100. Further, the method of applying the ultraviolet curable resin adhesive 40 is not limited to the drawing method, and may be a screen printing method or a stamping method.

  Next, in the step shown in FIG. 6C, the bottom surface of the outer frame 65 of the first transparent member 20 constituting the first transparent member array 100 is matched with the peripheral circuit region 35 in the semiconductor image sensor array 240. Perform alignment.

  Next, in the step shown in FIG. 6D, after the outer frame 65 of the first transparent member array 100 is brought into contact with the ultraviolet curable resin adhesive 40, from above the first transparent member array 100, a drawing method is used. Ultraviolet light having a wavelength that cures the ultraviolet curable resin adhesive 40 is irradiated for a predetermined time. The ultraviolet irradiation is not limited to the drawing method, and may be the entire surface irradiation.

  This bonding may be performed by final curing of the adhesive by heating after performing temporary bonding by ultraviolet irradiation.

  Next, in the step shown in FIG. 6 (e), by polishing with alumina powder or grinding with a diamond grindstone from above the first transparent member array 100, the first transparent member array 100 has a depth of about 150 μm. Just remove it. As a result, the first transparent member array 100 is separated into the individual first transparent members 20. At this time, the processed surface 120 on each of the first transparent members 20 is devitrified with countless scratches.

  Next, in the step shown in FIG. 6 (f), the machined surface 120 that has been devitrified by a mechanical or chemical mechanical method is polished to a mirror surface 130. At this time, an appropriate load is selected as the polishing load in order to avoid the occurrence of dishing (dent) in the portion of the first transparent member 20 located above the hollow portion 60. Note that a method using a laser beam may be used as a cutting method, and energy may be optimized so as not to damage the surface of the underlying semiconductor imaging device 10.

  Next, in the step shown in FIG. 6G, the semiconductor image sensor array 240 is cut along the dicing lane 230 with a dicing blade (not shown). As a result, the semiconductor imaging device 1 according to the present embodiment that is separated into pieces is finished.

  Thereafter, although not shown, bumps are formed on the electrodes 50 of the semiconductor imaging device 1. Then, the semiconductor imaging device 1 is attached to a semiconductor connection terminal (not shown) of a substrate (not shown) by an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method, or the semiconductor imaging device 1 is attached to a substrate. After bonding with a conductive adhesive or the like, the electrode 50 and the semiconductor image sensor connection terminal of the substrate are connected and attached with a thin metal wire by wire bonding.

  According to the manufacturing method of the semiconductor imaging device 1 of the present embodiment described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package, and the first transparent member 20 is directly attached to the semiconductor imaging device 10. Therefore, it is possible to reduce the thickness of the semiconductor imaging device 1 and to obtain a semiconductor imaging device 1 that is inexpensive and has little variation.

  Next, a modification of the method for producing the semiconductor imaging device 1 in the present embodiment will be described with reference to FIGS. FIGS. 7A to 7G are cross-sectional views showing a modification of the method of bonding the first transparent member array and the semiconductor image sensor array in the first embodiment.

  First, the steps shown in FIGS. 7A to 7D are the same as the steps shown in FIGS. 6A to 6D, and the description thereof is omitted here.

  In the manufacturing method of the modified example, the first transparent member of the first transparent member array 100 is used by using the high-speed rotating dicing blade 250 in the step shown in FIG. 7E after the step shown in FIG. Cutting is performed along the outer frame 65 located on both sides of the peripheral groove 90. At this time, it is preferable to perform cutting without bringing the cutting edge of the high-speed rotating dicing blade 250 into contact with the surface of the semiconductor imaging device 10. In addition, a V-groove (not shown) is formed in advance by performing a bevel cutting along the planned cutting line after attaching a planned cutting line to the surface of the first transparent member array 100 before cutting. It may be left. In this case, if full-cut dicing is performed along the V-shaped groove, cutting can be performed at a more accurate position. When this cutting is completed, as shown in FIG. 7F, the first transparent member 20 singulated on the semiconductor image sensor array 240 is bonded.

  Thereafter, in the step shown in FIG. 7G, the semiconductor image sensor array 240 is cut by the same method as the step shown in FIG. Further, the mounting method of the semiconductor imaging device 2 on the optical system structure or the substrate is the same as the method described above, and the description thereof is omitted.

  According to the manufacturing method of the modified example described above, the semiconductor imaging device can be reduced in size as compared with the semiconductor imaging device in which the semiconductor imaging device is housed in a package, and the first transparent member 20 is directly attached to the semiconductor imaging device 10 so that the thickness is reduced. In addition, the semiconductor imaging device 2 can be obtained at a lower cost and with less variation by simplifying the process.

(Second Embodiment)
Hereinafter, a semiconductor imaging device according to a second embodiment of the present invention will be described with reference to FIGS. 8 and 9A and 9B. FIG. 8 is a schematic perspective view showing the overall configuration of the semiconductor imaging device according to the second embodiment. FIG. 9A is a schematic plan view for explaining the shape of the semiconductor imaging device in the second embodiment, and FIG. 9B is a cross-sectional view taken along the line D-D in FIG. FIG.

  As shown in FIGS. 8 and 9A and 9B, in the semiconductor imaging device 3 of the present embodiment, the semiconductor imaging device 11 includes an imaging region 30, a peripheral circuit region 35, an external circuit, and an electrical signal. An input / output unit and an electrode 50 for a power supply unit are provided for transmission and reception. An insulating surface protective film (not shown) is provided on the surface of the peripheral circuit region 35, and the second metal layer 170 (FIG. 9B) is formed on the insulating surface protective film so as to surround the imaging region 30. Is provided).

  The first transparent member 21 is made of glass or the like whose both surfaces are optically flat, and has a hollow portion 60 on one surface thereof (the surface on the side in contact with the semiconductor imaging element 11). The planar dimension of the hollow portion 60 is at least larger than the imaging region 30 of the semiconductor imaging element 11, and the height is higher than microlenses (not shown) formed in each pixel of the imaging region 30, and around the hollow portion 60. The outer dimension of the outer frame 65 (shown in FIGS. 9A and 9B) is smaller than the arrangement region of the electrodes 50 of the semiconductor image sensor 11. And the hollow part 60 is provided in the center part of the 1st transparent member 21, and the outer frame 65 is provided in the area | region surrounding the four sides of the hollow part 60. As shown in FIG. A first metal layer 160 (shown in FIG. 9B) is formed on the surface of the outer frame 65.

  A solder paste 150 is used for bonding the first metal layer 160 in the outer frame 65 and the second metal layer 170 in the peripheral circuit region 35.

  Next, the structure of each member will be described in detail.

  First, one of the semiconductor imaging elements 11 in the group of semiconductor imaging elements formed vertically and horizontally on the main surface of the semiconductor substrate 111 of the present embodiment is a pixel in which pixels including color filters and microlenses are two-dimensionally arranged. A CCD-type or CMOS-type imaging region 30 composed of effective pixel groups in the region, and a peripheral circuit region 35 arranged on the outer periphery of the imaging region 30 to process electric signals from the pixel groups and transfer them to the digital signal processing circuit And an electrode which is disposed on the outer periphery of the peripheral circuit region 35, that is, on the outermost periphery of the semiconductor imaging device 10, and serves as a connection part for transmitting and receiving electrical signals between the peripheral circuit region 35 and an external device (not shown). 50. Then, on the peripheral circuit region 35 in the semiconductor substrate 111, a closed second metal layer 170 (shown in FIG. 9B) made of copper and nickel thin film laminated wiring is formed. The total thickness of the second metal layer 170 is preferably in the range of 1 μm to 5 μm.

  At this time, in the peripheral circuit region 35, an area sufficient to bond the bottom surface of the outer frame 65 of the first transparent member 21 is secured in advance. Here, a silicon substrate is used as the semiconductor substrate 111, but in the present invention, a semiconductor substrate made of another single atom or compound may be used.

  Moreover, in the 1st transparent member 21 arrange | positioned through the air layer (hollow part 60) on the imaging area | region 30 of the semiconductor image pick-up element 11, both surfaces have an optical plane. The outer dimension of the first transparent member 21 is set to a size that fits on the center side of the semiconductor imaging device 11 from the arrangement region of the electrodes 50. In addition, a hollow portion 60 surrounded by an outer frame 65 is provided on the lower surface of the first transparent member 21. In the hollow portion 60, the bottom surface is finished to be an optical plane, the dimensions are such that the vertical and horizontal dimensions are located on the outer periphery of the imaging region 30 of the semiconductor imaging device 11, and the height is formed in a pixel group in the imaging region 30. The dimension is higher than the height of the microlens. At this time, the surface of the first transparent member 21 located outside the hollow portion 60 and the surface constituting the bottom surface of the hollow portion 60 are formed to be parallel with high accuracy. The material of the first transparent member 21 includes high-purity glass that does not contain a radioactive element such as uranium or thorium. In the present invention, however, the first transparent member 21 is specified for adding a function as amorphous quartz or a filter. A crystal having a crystal plane of On the bottom surface of the outer frame 65, a first metal layer 160 made of a laminated thin film of copper and nickel is formed. The first metal layer 160 has the same configuration as the second metal layer 170.

  The solder paste 150 is made of a fluxless low melting point tin-based alloy. The solder paste 150 is applied between the first metal layer 160 and the second metal layer 170 and then irradiated with a laser beam by a drawing method or a light shielding mask method. Are melt-bonded. Here, the first metal layer 160 and the second metal layer 170 are bonded by irradiating a laser beam, but the bonding is performed using a heating method in which surrounding members such as microlenses are melted in a temperature range that does not deteriorate. May be. The solder paste 150 is applied to a predetermined position on the semiconductor image sensor array 241 by a screen printing method or a jet injection method, or is transferred from the solder paste reservoir to the bottom surface of the outer frame 65 of the first transparent member array 101. You may supply by.

  The semiconductor image sensor 11 having the above-described configuration is formed on a substrate (not shown) on which a bump (not shown) is formed on the electrode 50 and a semiconductor image sensor connection terminal (not shown) is formed. Mounted on top. At this time, the semiconductor image sensor connection terminal and the semiconductor image sensor 11 are joined by, for example, an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method. Alternatively, after the semiconductor imaging element 11 is bonded on the substrate with an adhesive or the like, the electrode 50 on the surface of the semiconductor imaging element 11 and the semiconductor imaging element connection terminal of the substrate may be connected by wire bonding. Thereby, the semiconductor imaging device 3 of the present invention is obtained.

  According to the structure of the constituent member described above, the semiconductor imaging device can be reduced in size as compared with the semiconductor imaging device in which the semiconductor imaging device is housed in the package, and the first transparent member 21 can be directly attached to the semiconductor imaging device 11 so that the thickness can be reduced. .

  Next, a method of manufacturing the first transparent member 21 in the semiconductor imaging device of the present embodiment will be described with reference to FIGS. 10 (a) to 10 (g) and FIGS. 11 (a) and 11 (b). Here, a method of manufacturing the first transparent member array 101 in which a plurality of the first transparent members 21 shown in FIGS. 8 and 9A and 9B are arranged will be described. In addition, the 1st transparent member array 101 is cut out later for every 1st transparent member 21, and is separated into pieces.

  FIGS. 10A to 10G are cross-sectional views showing a process of manufacturing the first transparent member array 101 in the second embodiment.

  In the manufacturing method of this embodiment, first, in the step shown in FIG. 10A, high-purity glass having a thickness of 400 μm, flatness of both surfaces within 5 μm, visible light transmittance of 90% or more, and containing no uranium or thorium. The 1st transparent base material 71 which consists of etc. is prepared. On one surface of the first transparent substrate 71, a first metal layer 160 having a total thickness of 1 μm to 5 μm made of a laminate of copper and nickel is formed. For convenience of explanation, the thickness of the first transparent substrate 71 is 400 μm, but may have other thickness. In this case, the thickness is preferably 100 μm to 500 μm. Further, as the first metal layer 160, a laminated film of gold and nickel, or a three-layer film of gold, copper and nickel may be used. Further, instead of nickel in the first metal layer 160, a refractory metal such as tungsten, molybdenum, or titanium may be used.

  Next, in the step shown in FIG. 10B, the photoresist 80a is formed on the first metal layer 160 and the surface of the first transparent base 71 on which the first metal layer 160 is not formed. A photoresist 80b is formed. Thereafter, an opening is formed in the photoresist 80a.

  Next, in the step shown in FIG. 10C, dry etching is performed on the first metal layer 160 using the photoresist 80a as a mask. The dry etching at this time is performed using a gas that reacts with the first metal layer 160. Thereby, the first metal layer 160 exposed in the opening of the photoresist 80a is removed. Thereafter, the hollow portion 60 is formed. When the hollow portion 60 is formed to this depth, a microlens having a height of 2 μm, for example, is used.

  Next, in the step shown in FIG. 10D, the photoresists 80a and 80b on both surfaces of the first transparent substrate 71 are removed by a removing solution or ashing.

  Next, in the step shown in FIG. 10E, the inside and the periphery of the hollow portion 60 in the first transparent substrate 71 are covered with the photoresist 80a, and the opposite surface of the first transparent substrate 71 is covered with the photoresist 80b. cover.

  Next, in the step shown in FIG. 10F, dry etching is performed on the first metal layer 160 using the photoresist 80a as a mask. This dry etching is performed using a gas that reacts with the metal of the first metal layer 160. Subsequently, the first transparent member peripheral groove 90 having a depth of 250 μm to 300 μm is formed by performing dry etching using a fluorine compound gas. Note that the etching for forming the first transparent member peripheral groove 90 may be performed by wet etching halfway and finished by dry etching.

  Finally, in the step shown in FIG. 10G, the photoresists 80a and 80b on both surfaces of the first transparent substrate 71 are removed by a remover or ashing. By passing through the above processes, the 1st transparent member array 101 in which the 1st transparent member 21 was formed in the length and breadth on the 1st transparent base material 71 surface is obtained.

  Fig.11 (a) is a schematic plan view which shows the shape of the 1st transparent member array in 2nd Embodiment, Comprising: FIG.11 (b) is an EE line | wire among the structures shown to Fig.11 (a). It is a figure which shows the cross section along line. As shown in FIGS. 11A and 11B, in the first transparent member array 101 of the present embodiment, each first transparent member 21 is surrounded by a first transparent member peripheral groove 90, and the first transparent member A hollow portion 60 is formed in the central portion of the member 21. A first metal layer 160 is formed on the outer frame 65 surrounding the hollow portion 60.

  Next, a method for manufacturing the semiconductor imaging device 11 in the semiconductor imaging device of the present embodiment will be described. Here, a method of forming a semiconductor image sensor array 241 (shown in FIGS. 12A and 12B) in which a plurality of semiconductor image sensors 11 shown in FIGS. 8 and 9A and 9B are arranged will be described. . FIG. 12A is a schematic plan view showing the shape of the semiconductor image sensor array in the second embodiment, and FIG. 12B shows the FF line in the structure shown in FIG. It is a figure which shows the cross section along. The semiconductor image sensor array 241 is later cut out into individual pieces for each semiconductor image sensor 10. As shown in FIG. 12A, in the semiconductor image sensor array 241, the semiconductor image sensor 11 surrounded by the dicing lane 230 is arranged vertically and horizontally on the semiconductor substrate 111.

  The semiconductor imaging device array 241 is manufactured by performing a combination of fine processing techniques such as metal or dielectric film formation, photolithography, ion implantation, etching, and diffusion on the wafer. Further, an annular second metal layer 170 surrounding the imaging region 30 is formed on the surface protective film (not shown) of each peripheral circuit region 35 of the semiconductor imaging element array 241. The second metal layer 170 is made of a film having a thickness of 1 μm to 5 μm in which copper and nickel are stacked. Thereby, the shape of the semiconductor image sensor array 241 in which the semiconductor image sensor 11 having the CCD type or CMOS type image pickup region 30 is formed vertically and horizontally is obtained. In addition, since this manufacturing method itself can be performed by a well-known method, illustration of a manufacturing process is abbreviate | omitted. In the layout of the semiconductor imaging device 11 of the present embodiment, the peripheral circuit region 35 disposed between the imaging region 30 and the region where the electrode 50 is formed has a size that allows the first transparent member 21 to be bonded.

   Next, a method for bonding the first transparent member array 101 and the semiconductor image pickup device array 241 to separate them will be described with reference to FIGS. FIGS. 13A to 13G are cross-sectional views showing a method of bonding the first transparent member array and the semiconductor image sensor array in the second embodiment.

  In this method, first, the semiconductor image sensor array 241 is prepared in the step shown in FIG.

  Next, in the step shown in FIG. 13B, an annular second metal layer 170 that surrounds the imaging region 30 is formed on the peripheral circuit region 35. The second metal layer 170 is formed by stacking copper and nickel to have a thickness of 1 μm to 5 μm by combining various microfabrication techniques such as metal film formation, photolithography, and etching. At this time, the second metal layer 170 may be a laminated film of gold and nickel, or may be a three-layer film of gold, copper, and nickel. Further, instead of nickel in the second metal layer 170, a refractory metal such as tungsten, molybdenum, or titanium may be used.

  Next, in the step shown in FIG. 13C, a thick film of the fluxless solder paste 150 made of a tin-based alloy is patterned on the second metal layer 170 by screen printing. In addition, the formation method of the solder paste 150 is not limited to screen printing, You may form by the jet injection system. Further, it may be formed by a stamping method for the bottom surface of the outer frame 65 of the first transparent member 21.

  Thereafter, alignment is performed so that the bottom surface of the outer frame 65 in the first transparent member array 101 coincides with the peripheral circuit region 35 of the semiconductor image sensor array 241.

  Next, in the step shown in FIG. 13D, after the bottom surface of the outer frame 65 of the first transparent member array 101 is brought into contact with the peripheral circuit region 35 of the semiconductor image sensor array 241, the first transparent member array 101 is subjected to the first step in an inert gas atmosphere. 1 A laser beam having a wavelength at which the solder paste 150 melts is irradiated from above the transparent member array 101 by a drawing method for a predetermined time. At this time, bonding may be performed by heat melting using a low-melting solder paste.

  Next, the steps shown in FIGS. 13E to 13G are performed. Since these are the same as the steps shown in FIGS. 6E to 6G, the description thereof is omitted. As a result, the semiconductor imaging device 3 according to the present embodiment that is separated into pieces is finished.

Thereafter, although not shown, bumps are formed on the electrodes 50 of the semiconductor imaging device 3. Then, the semiconductor imaging device 3 is attached to a semiconductor connection terminal (not shown) of a substrate (not shown) by an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method, or the semiconductor imaging device 11 is attached to the substrate. After contacting with an adhesive or the like on the top, the electrode 50 and the semiconductor image sensor connection terminal of the substrate are connected and connected by a thin metal wire by wire bonding.
In addition, in order to separate the first transparent member array 101, a laser beam that does not damage the surface of the underlying semiconductor imaging device 11 by performing energy optimization may be used.

  According to the manufacturing method of the semiconductor imaging device 3 of the present embodiment described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package, and the first transparent member 21 is directly attached to the semiconductor imaging device 11. Therefore, it is possible to reduce the thickness of the semiconductor image pickup device 3 and to obtain a semiconductor image pickup device 3 that is inexpensive and has little variation.

(Third embodiment)
A semiconductor imaging device according to the third embodiment of the present invention will be described below with reference to FIGS. 14 (a) and 14 (b). FIG. 14A is a schematic perspective view showing the overall configuration of the semiconductor imaging device according to the third embodiment, and FIG. 14B shows a cross section taken along the line GG in FIG. FIG.

  As shown in FIGS. 14A and 14B, in the semiconductor imaging device 4 of the present embodiment, the semiconductor imaging device 12 exchanges electrical signals with the imaging region 30, the peripheral circuit region 35, and an external circuit. And an electrode 50 of the power supply unit.

  The first transparent member 22 is made of a transparent resin molded by the resin molding die 180 and has a hollow portion 60 on one surface thereof (surface on the side in contact with the semiconductor imaging element 12). The planar dimension of the hollow portion 60 is at least larger than the imaging region 30 of the semiconductor imaging element 12, the height is higher than microlenses (not shown) formed in each pixel of the imaging region 30, and the outside of the periphery of the hollow portion 60 is The outer dimension of the frame 65 is smaller than the arrangement region of the electrodes 50 of the semiconductor image sensor 12.

  The first transparent member 22 and the peripheral circuit region 35 in the semiconductor imaging element 12 are bonded and fixed with an ultraviolet curable adhesive 41 made of, for example, resin.

  Next, the structure of each member will be described in detail.

  First, since the configuration of the semiconductor imaging device 12 of the present embodiment is the same as the configuration of the semiconductor imaging device 10 described in the first embodiment, detailed description thereof is omitted here.

  On the other hand, the first transparent member 22 is made of a transparent resin 190 (shown in FIG. 15B) formed by a resin molding die 180 (shown in FIG. 15A), and both surfaces have optical planes. Yes. The outer dimension of the first transparent member 22 is set to a size that fits in the center side of the semiconductor imaging element 11 from the arrangement region of the electrodes 50. A hollow portion 60 surrounded by an outer frame 65 is provided on the lower surface of the first transparent member 22. In the hollow portion 60, the bottom surface is finished to be an optical plane, the dimensions are such that the vertical and horizontal dimensions are located on the outer periphery of the imaging region 30 of the semiconductor imaging device 12, and the height is formed in a pixel group in the imaging region 30. The dimension is higher than the height of the microlens. At this time, the surface of the first transparent member 22 located outside the hollow portion 60 and the surface constituting the bottom surface of the hollow portion 60 are formed to be parallel with high accuracy. In addition, as a material of the 1st transparent member 22, a thermosetting epoxy resin is mentioned, However, In this invention, a thermoplastic acrylic resin may be sufficient.

  Furthermore, the ultraviolet curable adhesive 41 applied for bonding the first transparent member 22 on the surface of the peripheral circuit region 35 of the semiconductor imaging device 12 is made of an acrylic resin or an epoxy resin containing a photoreaction initiator. The ultraviolet curable adhesive 41 is used to bond and fix between the semiconductor imaging device 12 and the first transparent member 22. Here, a photo-curing type is used as the ultraviolet curable adhesive 41, but a thermo-curing type that cures in a temperature range that does not deteriorate surrounding components such as a microlens may be used.

  The semiconductor image pickup device 12 having the above configuration is formed on a substrate (not shown) on which a bump (not shown) is formed on the electrode 50 and a semiconductor image pickup device connection terminal (not shown) is formed. Mounted on top. At this time, the semiconductor image sensor connection terminal and the semiconductor image sensor 12 are joined by, for example, an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method. Alternatively, after the semiconductor image pickup device 12 is bonded to the substrate with an adhesive or the like, the electrode 50 on the surface of the semiconductor image pickup device 12 and the semiconductor image pickup device connection terminal of the substrate may be connected by wire bonding. Thereby, the semiconductor imaging device 4 of this embodiment is obtained.

  According to the structure of the constituent member described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package. Furthermore, since the first transparent member 22 is obtained by resin molding and can be directly attached to the semiconductor imaging device 12, it can be easily manufactured and can be thinned.

  Next, a method for manufacturing the first transparent member 22 in the semiconductor imaging device of the present embodiment will be described with reference to FIGS. Here, a method for manufacturing the first transparent member array 102 in which a plurality of first transparent members 22 shown in FIGS. 14A and 14B are arranged will be described. In addition, the 1st transparent member array 102 is cut out for every 1st transparent member 22 later, and is separated into pieces. FIGS. 15A to 15C are cross-sectional views showing a process of manufacturing the first transparent member array in the third embodiment.

  In the manufacturing method of this embodiment, first, a resin molding die 180 including an upper mold and a lower mold is prepared in the step shown in FIG. In the resin molding die 180, the thickest part of the cavity is 400 μm, the convex part for forming the hollow part 60 is 5 μm to 100 μm, and the convex part for forming the first transparent member peripheral groove 90 is 300 μm thick. The flatness of both surfaces of the hollow portion 60 is finished within 5 μm. This mold is set in advance to a temperature suitable for molding the transparent resin 190 in the range of 160 ° C to 190 ° C. For convenience of explanation, the thickness of the thickest part is 400 μm, but it may have other thickness. In this case, the thickness is preferably 100 μm to 500 μm.

  Next, in the step shown in FIG. 15B, the transparent resin 190 such as a molten epoxy resin is injected from the gate of the resin molding die 180 prepared in the previous step at an injection rate that can prevent entrainment of bubbles. Inject into mold cavity. Then, it hold | maintains until hardening complete | finishes in the state of pressurization.

  Finally, in the step shown in FIG. 15C, the resin molding die 180 is opened and the first transparent member array 102 is taken out. Thereafter, unnecessary gate portions (not shown) and air vent portions (not shown) integral with the first transparent member array 102 are removed, and wax on the bottom surface of the hollow portion 60 and the bottom surface of the outer frame 65 around the hollow portion is removed. A film (not shown) is removed by polishing, ashing, solvent or the like. By passing through the above processes, the 1st transparent member array 102 in which the 1st transparent member 22 was formed in the length and breadth on the 1st transparent base material 72 surface is obtained.

  Note that the method of forming the semiconductor image sensor array 242 (shown in FIG. 16 and the like) is the same as that in the first embodiment, and thus the description thereof is omitted.

  Next, a method of bonding the first transparent member array 102 and the semiconductor image pickup device array 242 to separate them will be described with reference to FIGS. FIGS. 16A to 16G are cross-sectional views illustrating a method of bonding the first transparent member array and the semiconductor imaging element array in the third embodiment.

  First, in the step shown in FIG. 16A, the semiconductor image sensor array 242 is prepared by the same method as in the first embodiment.

  Next, in the step shown in FIG. 16B, an appropriate amount of the ultraviolet curable resin adhesive 40 is applied on the peripheral circuit region 35 by a drawing method using a fine nozzle (not shown). At this time, the ultraviolet curable adhesive 41 made of, for example, resin is applied in a layout corresponding to the shape of the bottom surface of the outer frame 65 (shown in FIG. 14B and the like) of the first transparent member array 102. Moreover, the application method of the ultraviolet curable adhesive 41 is not limited to the drawing method, and may be a screen printing method or a stamping method.

  Next, in the step shown in FIG. 16C, the bottom surface of the outer frame 65 of the first transparent member 22 constituting the first transparent member array 102 is matched with the peripheral circuit region 35 in the semiconductor image sensor array 242. Perform alignment.

  Next, in the step shown in FIG. 16D, after the outer frame 65 of the first transparent member array 102 is brought into contact with the ultraviolet curable adhesive 41, ultraviolet rays are drawn from above the first transparent member array 102 by a drawing method. Ultraviolet light having a wavelength that cures the curable adhesive 41 is irradiated for a predetermined time. The ultraviolet irradiation is not limited to the drawing method, and may be the entire surface irradiation. In the step of bonding the first transparent member array 102 to the semiconductor image sensor array 242, the adhesive may be finally cured by heating after performing temporary bonding with ultraviolet irradiation.

  Next, in the step shown in FIG. 16 (e), by polishing with alumina powder or grinding with a diamond grindstone from above the first transparent member array 102, the first transparent member array 102 has a depth of about 100 μm. Just remove it. Thereby, the first transparent member array 102 is separated into the individual first transparent members 22. At this time, the processed surface 120 on each of the first transparent members 22 is devitrified with countless scratches.

  Next, in the step shown in FIG. 16 (f), the processed surface 120 that has been devitrified by a mechanical or chemical mechanical method is polished to a mirror surface 130. At this time, an appropriate load is selected to avoid dishing (depression) in the portion of the first transparent member 20 located above the hollow portion 60 or sagging around the first transparent member 22. .

  Finally, in the step shown in FIG. 16G, the semiconductor image sensor array 242 is cut along the dicing lane 230 with a dicing blade (not shown). As a result, the semiconductor imaging device 4 according to the present embodiment that is separated into pieces is finished.

  Thereafter, although not shown, bumps are formed on the electrodes 50 of the semiconductor imaging device 4. Then, the semiconductor imaging device 4 is attached to a semiconductor connection terminal (not shown) of a substrate (not shown) by an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method, or the semiconductor imaging device 4 is attached to the substrate. After bonding with a conductive adhesive or the like, the electrode 50 and the semiconductor image sensor connection terminal of the substrate are connected and attached with a thin metal wire by wire bonding.

  According to the manufacturing method of the present embodiment described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package, and the first transparent member 22 is directly attached to the semiconductor imaging element 12 so that the thickness can be reduced. realizable. Furthermore, the semiconductor imaging device 4 with low cost and small variation can be obtained.

(Fourth embodiment)
A semiconductor imaging device according to the fourth embodiment of the present invention will be described below with reference to FIGS. 17 (a) and 17 (b). FIG. 17A is a schematic perspective view illustrating the entire configuration of the semiconductor imaging device 5 according to the fourth embodiment, and FIG. 17B is a cross-sectional view taken along the line HH in FIG. FIG.

  As shown in FIGS. 17A and 17B, in the semiconductor imaging device 5 of the present embodiment, the semiconductor imaging device 13 exchanges electrical signals with the imaging region 30, the peripheral circuit region 35, and an external circuit. The input / output unit and the electrode 50 of the power supply unit are provided.

  The first transparent member 23 is made of a transparent resin 190 molded by a resin molding die 180 and has a hollow portion 60 on one surface thereof (a surface on the side in contact with the semiconductor imaging element 13). A second transparent member 210 is bonded to the bottom surface of the first transparent member 23 in the hollow portion 60 with the transparent adhesive 200 interposed therebetween. The planar dimension of the hollow portion 60 is at least larger than the imaging region 30 of the semiconductor imaging element 13, the height is higher than the microlens formed in each pixel of the imaging region 30, and the outer dimension of the outer frame 65 around the hollow portion 60. Has a shape smaller than the arrangement region of the electrodes 50 of the semiconductor imaging device 13.

  The first transparent member 23 and the peripheral circuit region 35 in the semiconductor imaging device 13 are bonded and fixed with an ultraviolet curable adhesive 41.

  Next, the structure of each member will be described in detail.

  First, since the configuration of the semiconductor imaging device 13 of the present embodiment is the same as the configuration of the semiconductor imaging device 10 described in the first embodiment, detailed description thereof is omitted here.

  The first transparent member 23 is made of a transparent resin 190 (shown in FIG. 18 (b)) molded by a resin mold 180 (shown in FIG. 18 (a)), and both surfaces have optical planes. Yes. The outer dimension of the first transparent member 23 is set to a size that fits in the center side of the semiconductor imaging element 11 from the arrangement region of the electrodes 50. A hollow portion 60 surrounded by an outer frame 65 is provided on the lower surface of the first transparent member 23.

  The bottom surface of the hollow portion 60 is finished to an optical plane, and a second transparent member 210 having a thickness of 230 μm made of a glass plate having an optical plane is bonded to the bottom surface with a transparent adhesive 200. . The dimensions are such that the vertical and horizontal positions are located on the outer periphery of the imaging region 30 of the semiconductor imaging device 12, and the height is higher than the height of the microlens formed in the pixel group in the imaging region 30. At this time, the surface of the first transparent member 23 located outside the hollow portion 60 and both surfaces of the second transparent member 210 are formed to be parallel with high accuracy. In addition, as a material of the 1st transparent member 23, a thermosetting epoxy resin is mentioned, However, In this invention, a thermoplastic acrylic resin may be sufficient. The material of the second transparent member 210 may be a high-purity glass that does not contain a radioactive element such as uranium or thorium. It may be a crystal having

  Furthermore, the ultraviolet curable adhesive 41 and the transparent adhesive 200 are made of an acrylic resin or an epoxy resin containing a photoreaction initiator. These are solidified by being irradiated with ultraviolet rays after being applied. Although a photo-curing adhesive is used here, a thermo-curing type that cures in a temperature range that does not deteriorate surrounding components such as a microlens may be used.

  The semiconductor image pickup device 13 having the image pickup function configured as described above has bumps (not shown) formed on the electrodes 50, and an SBB (Stud Bump Bonding) method or a TCB (TCB) method is used at the connection portion of the optical system structure. It is attached by the thermocompression bonding method. Alternatively, after the semiconductor image pickup device 13 is bonded on a substrate (not shown) with a conductive adhesive or the like, the electrode 50 and the semiconductor image pickup device connection terminal of the substrate are connected by a thin metal wire by wire bonding. Attached.

  According to the structure described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package. Further, the first transparent member 23 can be obtained by molding the transparent resin 190, and the first transparent member 23 is directly attached to the semiconductor imaging device 13 in a state where the second transparent member 210 is adhered to the bottom surface of the hollow portion 60. Therefore, the semiconductor imaging device can be easily manufactured. Thereby, deformation of the image on the surface of the imaging region 30 of the semiconductor imaging element 13 can be prevented and a reduction in thickness can be realized.

  Next, a method for manufacturing the first transparent member 23 in the semiconductor imaging device of the present embodiment will be described with reference to FIGS. Here, a method of manufacturing the first transparent member array 103 in which a plurality of first transparent members 23 shown in FIGS. 17A and 17B are arranged will be described. In addition, the 1st transparent member array 103 is cut out for every 1st transparent member 23 later, and is separated into pieces. 18 (a) to 18 (e) are cross-sectional views showing a process of manufacturing the first transparent member array in the fourth embodiment.

  In the manufacturing method of the present embodiment, first, in the step shown in FIG. 18A, a resin molding die 180 composed of an upper die and a lower die is prepared. In the resin molding die 180, the thickness of the thickest part of the cavity is 400 μm, the convex part for forming the hollow part 60 is 200 μm to 300 μm, and the convex part for forming the first transparent member peripheral groove 90 is 300 μm. The flatness of both surfaces of the hollow portion 60 is finished within 5 μm. This mold is set in advance to a temperature suitable for molding the transparent resin 190 in the range of 160 ° C to 190 ° C. For convenience of explanation, the thickness of the thickest part is 400 μm, but it may have other thickness. In this case, the thickness is preferably 100 μm to 500 μm.

  Next, the steps shown in FIGS. 18B and 18C are performed. Since these steps are the same as the steps shown in FIGS. 15B and 15C, description thereof will be omitted.

  Next, in the step shown in FIG. 18D, a preliminarily degassed liquid transparent adhesive 200 is applied to the bottom surface of the hollow portion 60 of each first transparent member 23 in the first transparent member array 103.

  Finally, in the step shown in FIG. 18 (e), the second transparent member 210 having a thickness of 230 μm is disposed on the transparent adhesive 200. And before hardening the transparent adhesive 200, it pressure-reduces, heating at low temperature at 40 to 80 degreeC, The interface of the 2nd transparent member 210 and the transparent adhesive 200, and the 1st transparent member 23 hollow part 60 bottom face And bubbles at the interface between the transparent adhesive 200 and the transparent adhesive 200 are removed. Thereafter, the transparent adhesive 200 is finally cured by ultraviolet irradiation or heating. At this time, the thickness of the second transparent member 210 is preferably in the range of 100 μm to 280 μm. In this way, the first transparent member array 103 of this embodiment is obtained.

  On the other hand, in the present embodiment, the method for producing the semiconductor image sensor array 243 before being singulated into the semiconductor image sensor 13 is the same as that in the first embodiment, and thus the description thereof is omitted.

  Next, a method for bonding the first transparent member array 103 and the semiconductor image pickup device array 243 to separate them will be described with reference to FIGS. FIGS. 19A to 19G are cross-sectional views illustrating a method of bonding the first transparent member array and the semiconductor imaging element array in the fourth embodiment.

  First, since the steps shown in FIGS. 19A and 19B are the same as the steps shown in FIGS. 16A and 16B of the third embodiment, description thereof is omitted here.

  Next, in the step shown in FIG. 19C, the bottom surface of the outer frame 65 of the first transparent member 23 constituting the first transparent member array 103 is aligned with the peripheral circuit region 35 in the semiconductor image sensor array 243. Perform alignment. At this time, the second transparent member 210 is already bonded on the bottom surface of the hollow portion 60 of the first transparent member 23.

  Next, after the outer frame 65 of the first transparent member array 103 is brought into contact with the ultraviolet curable adhesive 41 in the step shown in FIG. Ultraviolet rays having a wavelength at which the curable resin adhesive 41 is cured are irradiated for a predetermined time. The ultraviolet irradiation is not limited to the drawing method, and may be the entire surface irradiation. Moreover, you may adhere | attach by heating. Moreover, after performing temporary adhesion by ultraviolet irradiation, the adhesive may be finally cured by heating.

  Next, in the step shown in FIG. 19 (e), by polishing with alumina powder or grinding with a diamond grindstone from above the first transparent member array 103, the first transparent member array 103 has a depth of about 100 μm. Just remove it. As a result, the first transparent member array 103 is separated into the individual first transparent members 23. At this time, the processed surface 120 on each of the first transparent members 23 is devitrified with countless scratches.

  Next, in the step shown in FIG. 19 (f), the machined surface 120 that has been devitrified by a mechanical or chemical mechanical method is polished to a mirror surface 130. At this time, an appropriate load is selected to avoid dishing (depression) in the portion of the first transparent member 20 located above the hollow portion 60 or sagging around the first transparent member 22. .

  Finally, in the step shown in FIG. 19G, the semiconductor image sensor array 243 is cut along the dicing lane 230 with a dicing blade (not shown). As a result, the semiconductor imaging device 5 according to the present embodiment, which is separated into pieces, is finished.

  Thereafter, although not shown, bumps are formed on the electrodes 50 of the semiconductor imaging device 5. Then, the semiconductor imaging device 5 is attached to a semiconductor connection terminal (not shown) of a substrate (not shown) by an SBB (stud bump bonding) method or a TCB (thermocompression bonding) method, or the semiconductor imaging device 5 is attached to the substrate. After bonding with a conductive adhesive or the like, the electrode 50 and the semiconductor image sensor connection terminal of the substrate are connected and attached with a thin metal wire by wire bonding.

  According to the manufacturing method of the semiconductor imaging device 5 of the present embodiment described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package. Further, the first transparent member 23 can be obtained by molding the transparent resin 190, and the first transparent member 23 is directly attached to the semiconductor imaging device 13 with the second transparent member 210 adhered to the bottom surface of the hollow portion 60. Therefore, the semiconductor imaging device can be easily manufactured. Thereby, deformation of the image on the surface of the imaging region 30 of the semiconductor imaging element 13 can be prevented, and a reduction in thickness can be realized.

(Fifth embodiment)
Hereinafter, a semiconductor imaging device according to a fifth embodiment of the present invention will be described with reference to FIG. FIG. 20A is a schematic plan view for explaining the shape of the semiconductor imaging device according to the fifth embodiment, and FIG. 20B is a cross section taken along the line JJ of FIG. FIG.

  As shown in FIGS. 20A and 20B, in the semiconductor imaging device 6 of the present embodiment, the semiconductor imaging device 14 transmits and receives electrical signals between the imaging region 30, the peripheral circuit region 35, and an external circuit. The input / output unit and the electrode 50 of the power supply unit are provided. Since the structure and material of each constituent member are the same as those in the first embodiment, description thereof is omitted here. In the present embodiment, the outer frame 65 of the first transparent member 24 has a tapered cross-sectional shape. Thereby, it becomes possible to adhere to a narrow region of the semiconductor imaging device 14. Since the other structures and materials of the first transparent member 24 are the same as those of the first embodiment, description thereof is omitted here.

  Since the manufacturing method of the semiconductor image sensor array 244 of this embodiment is the same as that of the first embodiment, the description thereof is omitted.

  Next, a method for manufacturing the first transparent member 24 in the semiconductor imaging device of the present embodiment will be described with reference to FIGS. FIGS. 21A and 21B are cross-sectional views showing a process of forming the first transparent member array in the fifth embodiment.

  First, in the step shown in FIG. 21A, wet etching is performed using an etching solution of a hydrofluoric acid mixed solution. Thereby, the 1st transparent member periphery groove | channel 90 of depth 250micrometer-300 micrometers is formed in the part located in the circumference | surroundings of each hollow part 60 among the 1st transparent base materials 73. FIG. In addition, after performing this process by wet etching to the middle, finishing may be performed by dry etching.

  Finally, in the step shown in FIG. 21B, the photoresists 80a and 80b on both surfaces of the first transparent substrate 73 are removed by a removing solution or ashing. By passing through the above processes, the 1st transparent member array 104 in which the 1st transparent member 24 with the narrow width | variety of the outer frame 65 bottom face is obtained.

  Since the method for bonding the semiconductor image pickup device array 244 and the first transparent member array 104 as described above into pieces is the same as that in the first embodiment, description thereof is omitted.

  The separated semiconductor imaging device 6 is formed by forming bumps on the electrodes 50 and attaching the bumps to the connecting portion of the optical system structure by the SBB (Stud Bump Bonding) method or the TCB (Thermocompression Bonding) method. After the image pickup element 14 is bonded to the substrate with a conductive adhesive or the like, the electrode 50 and the semiconductor image pickup element connection terminal of the substrate may be connected by a wire bond and attached.

  Here, as a means for providing an inclination to the side wall of the first transparent member peripheral groove 90 formed around the first transparent member 24, a method in which wet etching processing is applied to the glass of the first transparent base material 73 has been described. . However, in the present invention, an inclination for forming the inclination of the first transparent member 24 is provided in the mold of the resin molding die 180 shown in FIG. The first transparent member 24 may be formed by pouring.

  Further, when the semiconductor imaging element array 244 and the first transparent member array 104 are bonded, the adhesive may be finally cured by heating after temporary bonding with ultraviolet irradiation. Furthermore, when the first transparent member array 104 is singulated, a laser beam that does not damage the surface of the lower semiconductor imaging element 14 by optimizing energy may be used.

  According to the manufacturing method of the present embodiment described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package, and the first and the transparent members 24 can be directly attached to the semiconductor imaging element 14. Can be realized. In addition, since the width of the bottom surface of the outer frame of the first transparent member 24 can be reduced, the area of the semiconductor imaging device 14 can be further reduced. Furthermore, the semiconductor imaging device 6 with low cost and small variation is obtained.

(Sixth embodiment)
Hereinafter, a semiconductor imaging device according to a sixth embodiment of the present invention will be described with reference to FIGS. 22 (a) and 22 (b). FIG. 22A is a schematic plan view for explaining the shape of the semiconductor imaging device according to the sixth embodiment, and FIG. 22B is a cross-sectional view taken along the line KK in FIG. FIG.

  As shown in FIGS. 22A and 22B, in the semiconductor imaging device 7 of this embodiment, the semiconductor imaging device 15 includes a first transparent member 25 and an ultraviolet curable resin adhesive 40. Since the structure and material of each of these constituent members are the same as those in the first embodiment, description thereof is omitted here.

  A method for manufacturing the semiconductor image sensor array 245 in which a plurality of semiconductor image sensors 15 are arranged is also the same as that in the first embodiment, and thus the description thereof is omitted.

  In the present embodiment, the first transparent member peripheral groove 90 formed in the periphery of each of the plurality of first transparent members 25 constituting the first transparent member array 105 bonded to the semiconductor image sensor array 245 (FIG. 21F, etc.) In place of the first transparent member peripheral groove 90 on the lines corresponding to the side wall forming lines, the dicing blade 250 having a thickness of 15 μm to 30 μm removes the depth to 250 μm to 300 μm by a dicing method. A half cut groove is formed. Alternatively, a half-cut groove having a depth of 250 μm to 300 μm may be formed by a dicing blade 250 having the same thickness as the width of the first transparent member peripheral groove 90. Below, the formation method is demonstrated, referring FIG. 23 (a)-(g).

  FIGS. 23A to 23G are cross-sectional views showing a process of producing a first transparent member array 105 in which a plurality of first transparent members are arranged in the sixth embodiment. Note that the manufacturing steps shown in FIGS. 23A to 23E are the same as the steps shown in FIGS. 3A to 3E of the first embodiment, and a description thereof will be omitted.

  In the manufacturing method of the present embodiment, after performing the steps shown in FIGS. 3A to 3E, the side walls of the first transparent member array 105 are formed on the photoresist 80a in the step shown in FIG. A line corresponding to the formation line is cut to a depth of 250 μm to 300 μm by a dicing method to form a half cut groove. For this dicing, a dicing blade 250 having a thickness of 15 μm to 30 μm is used. At this time, when the glass cutting waste during dicing can be removed by the cutting portion cooling water flow, the photoresist 80a on the cutting surface side may not be applied.

  Finally, in the step shown in FIG. 23G, the photoresists 80a and 80b on both sides are removed by a removing solution or ashing. By passing through the above processes, the 1st transparent member array 105 in which the 1st transparent member 25 was formed in the length and breadth on the 1st transparent base material 74 surface is obtained.

  The process of bonding the semiconductor imaging element array 245 and the first transparent member array 105 as described above into pieces is the same as the process shown in FIGS. 6A to 6G of the first embodiment. Therefore, illustration and description thereof are omitted.

  The separated semiconductor imaging device 7 is formed by forming bumps on the electrodes 50 and attaching them to the connecting portion of the optical system structure by the SBB (stud bump bonding) method or the TCB (thermocompression bonding) method, or by using a semiconductor. After the image pickup device 15 is bonded on the substrate with a conductive adhesive or the like, the electrode 50 and the semiconductor image pickup device connection terminal of the substrate may be connected by a wire bond and attached.

  Further, the semiconductor imaging element array 245 and the first transparent member array 105 may be bonded by performing temporary bonding by ultraviolet irradiation and then finally curing the adhesive by heating. Further, for the individualization of the first transparent member array 105, a laser beam that does not damage the surface of the underlying semiconductor imaging device 15 by optimizing energy may be used.

  According to the manufacturing method of the present embodiment described above, the size can be reduced as compared with the semiconductor imaging device in which the semiconductor imaging element is housed in the package, and the first and the transparent members 25 are directly attached to the semiconductor imaging element 15 so that the thickness is reduced. realizable. In addition, since the width of the bottom surface of the outer frame of the first transparent member 25 can be reduced, the area of the semiconductor imaging device 15 can be further reduced. Furthermore, the semiconductor imaging device 7 with low cost and small variation can be obtained.

  The constituent materials of the present invention are not limited to those described in the description from the first embodiment to the sixth embodiment, and are necessary for realizing the object of the present invention as each constituent material. Of course, any known material can be applied as long as it has a function or property.

  In the manufacturing method of the semiconductor imaging device of the present invention, the production of the dust-proof optical member and the adhesion to the semiconductor imaging device array can be performed in a lump. In addition, the semiconductor imaging device manufactured by this method can be reduced in size and thickness, and can be manufactured at a low cost by simplifying the manufacturing method. The possibility is high.

1 is a schematic perspective view illustrating an overall configuration of a semiconductor imaging device according to a first embodiment. (A) is a schematic plan view for demonstrating the shape of the semiconductor imaging device in 1st Embodiment, (b) is a figure which shows the cross section along the AA line of Fig.2 (a). . (A)-(d) is sectional drawing which shows the process of producing a 1st transparent member array in 1st Embodiment. (A) is a schematic plan view which shows the shape of the 1st transparent member array in 1st Embodiment, Comprising: (b) is the cross section along the BB line among the structures shown to Fig.4 (a). FIG. (A) is a schematic plan view which shows the shape of the semiconductor image pick-up element array in 1st Embodiment, (b) is a cross section along CC line among the structures shown to Fig.5 (a). FIG. (A)-(g) is sectional drawing which shows the method of adhere | attaching a 1st transparent member array and a semiconductor image sensor array in 1st Embodiment. (A)-(g) is sectional drawing which shows the modification of the method of adhere | attaching a 1st transparent member array and a semiconductor image pick-up element array in 1st Embodiment. It is a schematic perspective view which shows the whole structure of the semiconductor imaging device in 2nd Embodiment. (A) is a schematic plan view for demonstrating the shape of the semiconductor imaging device in 2nd Embodiment, (b) is a figure which shows the cross section along the DD line of Fig.9 (a). . (A)-(g) is sectional drawing which shows the process of producing the 1st transparent member array 101 in 2nd Embodiment. (A) is a schematic plan view which shows the shape of the 1st transparent member array in 2nd Embodiment, Comprising: (b) is a cross section along the EE line | wire among the structures shown to Fig.11 (a). FIG. (A) is a schematic plan view which shows the shape of the semiconductor image pick-up element array in 2nd Embodiment, (b) is a cross section along the FF line | wire among the structures shown to Fig.12 (a). FIG. (A)-(g) is sectional drawing which shows the method of adhere | attaching a 1st transparent member array and a semiconductor image sensor array in 2nd Embodiment. (A) is a schematic perspective view which shows the whole structure of the semiconductor imaging device in 3rd Embodiment, (b) is a figure which shows the cross section along the GG line of Fig.14 (a). (A)-(c) is sectional drawing which shows the process of producing a 1st transparent member array in 3rd Embodiment. (A)-(g) is sectional drawing which shows the method of adhere | attaching a 1st transparent member array and a semiconductor image sensor array in 3rd Embodiment. (A) is a schematic perspective view which shows the whole structure of the semiconductor imaging device 5 in 4th Embodiment, (b) is a figure which shows the cross section along the HH line | wire of Fig.17 (a). . (A)-(e) is sectional drawing which shows the process of producing a 1st transparent member array in 4th Embodiment. (A)-(g) is sectional drawing which shows the method of adhere | attaching a 1st transparent member array and a semiconductor image sensor array in 4th Embodiment. (A) is a schematic plan view for demonstrating the shape of the semiconductor imaging device in 5th Embodiment, (b) is a figure which shows the cross section along the JJ line | wire of Fig.20 (a). is there. (A), (b) is sectional drawing which shows the process of producing a 1st transparent member array in 5th Embodiment. (A) is a schematic plan view for demonstrating the shape of the semiconductor imaging device in 6th Embodiment, (b) is a figure which shows the cross section along the KK line | wire of Fig.22 (a). is there. (A)-(g) is sectional drawing which shows the process of producing the 1st transparent member array 105 in which multiple 1st transparent members arrange | position in 6th Embodiment.

Explanation of symbols

1-7 Semiconductor imaging device
10-15 Semiconductor image sensor
20-25 First transparent member
30 Imaging area
35 Peripheral circuit area
40, 41 UV curable adhesive
50 electrodes
60 hollow part
65 outer frame
70-74 first transparent substrate
80a, 80b photoresist
90 1st transparent member peripheral groove | channel 100-105 1st transparent member array 110, 111 Semiconductor substrate 120 Processing surface 130 Mirror surface 150 Solder paste 160 1st metal layer 170 2nd metal layer 180 Resin molding die 190 Transparent resin 200 Transparent adhesive 210 Second transparent member 230 Dicing lane 240-245 Semiconductor image sensor array

Claims (14)

A semiconductor imaging device having an imaging region, a peripheral circuit region, and an electrode region, and having a plurality of microlenses in the imaging region; and a transparent member covering the imaging region in the semiconductor imaging device;
The transparent member has a hollow portion having a planar shape larger than the imaging region and a height not contacting the microlens on the surface facing the semiconductor imaging device, and has an outer shape smaller than the peripheral circuit region. And
A semiconductor imaging device in which the semiconductor imaging device and the transparent member are bonded so that the hollow portion is disposed on the imaging region of the semiconductor imaging device.   The semiconductor imaging according to claim 1, wherein the transparent member further includes an outer frame portion disposed in an outer peripheral region of the hollow portion, and the outer frame portion and the peripheral circuit region in the semiconductor imaging element are bonded to each other. apparatus.   The semiconductor imaging device according to claim 1, wherein the transparent member and the semiconductor imaging element are bonded by low melting point solder.   The semiconductor imaging device according to claim 1, wherein a material of the transparent member is any one of glass, amorphous quartz, crystal, and transparent resin.   The transparent member is made of a transparent resin, and on the inner surface of the hollow portion in the transparent member, a flat plate made of at least one of glass, amorphous quartz, and quartz and having an optical flat surface is transparent. The semiconductor imaging device according to claim 1, wherein the semiconductor imaging device is bonded with an adhesive. A semiconductor imaging device having an imaging region in which a plurality of microlenses are formed, a peripheral circuit region disposed on the outer periphery of the imaging region, and an electrode region disposed on the outer periphery of the peripheral circuit region is a semiconductor across a dicing lane. A step (a) of producing a plurality of semiconductor image sensor arrays arranged on a substrate;
A transparent member array in which a transparent member having a hollow portion and an outer frame portion disposed in an outer peripheral region of the hollow portion is separated by a separation groove provided on the same surface as the hollow portion is manufactured. Step (b) to perform,
After the steps (a) and (b), a step (c) of bonding and fixing the peripheral circuit region in the semiconductor image sensor array and the outer frame portion in the transparent member array;
After the step (c), the transparent member array is removed from the side opposite to the surface on which the hollow portion and the separation groove are provided to a thickness at which the separation groove is exposed. A step (d) of individual separation;
After the step (d), a step (e) of mirroring the processed surface of the transparent member;
After the step (d), the semiconductor imaging device includes the step (f) of dicing the dicing lane of the semiconductor imaging device array and dividing the semiconductor imaging device to which the transparent member is bonded and fixed into individual pieces. Device manufacturing method. After the step (a) and before the step (c), further comprising a step of forming an adhesive layer on the peripheral circuit region in the semiconductor imaging device array,
The method of manufacturing a semiconductor imaging device according to claim 6, wherein in the step (c), the adhesive fixing is performed by the adhesive layer.   The step (b) includes a step (g) of forming the separation groove deeper than the hollow portion and wider than the dicing lane at a position corresponding to the dicing lane in the transparent substrate. The manufacturing method of the semiconductor imaging device of description.   The method of manufacturing a semiconductor imaging device according to claim 8, wherein the step (b) further includes a step of forming a first metal layer on a portion of the transparent base material located at an edge of the hollow portion. After the step (a) and before the step (c), a second metal layer is formed on the peripheral circuit region in the semiconductor image sensor array,
10. The method of manufacturing a semiconductor imaging device according to claim 9, wherein in the step (c), the adhesive fixing is performed by joining the first metal layer and the second metal layer with solder.   The method for manufacturing a semiconductor imaging device according to claim 6, wherein, in the step (b), the separation groove is formed by etching.   The method for manufacturing a semiconductor imaging device according to claim 6, wherein in the step (b), the separation groove is formed by dicing.   In the step (b), by forming a transparent resin using a resin molding die, the hollow portion having a planar shape larger than the imaging region and having a height not contacting the microlens, and the hollow The method of manufacturing a semiconductor imaging device according to claim 6, wherein the transparent member array having the separation groove deeper than the portion and wider than the dicing lane is formed.   The semiconductor imaging device according to claim 13, further comprising a step of bonding a flat plate transparent member on the inner surface of the hollow portion in the transparent member array after the step (b) and before the step (c). Production method.

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