JP2004063751A - Solid-state image sensing device and its manufacturing method - Google Patents

Solid-state image sensing device and its manufacturing method Download PDF

Info

Publication number
JP2004063751A
JP2004063751A JP2002219645A JP2002219645A JP2004063751A JP 2004063751 A JP2004063751 A JP 2004063751A JP 2002219645 A JP2002219645 A JP 2002219645A JP 2002219645 A JP2002219645 A JP 2002219645A JP 2004063751 A JP2004063751 A JP 2004063751A
Authority
JP
Japan
Prior art keywords
solid
state imaging
semiconductor substrate
substrate
spacer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002219645A
Other languages
Japanese (ja)
Inventor
Shunichi Hosaka
Hiroshi Maeda
Yoshihisa Negishi
Kazuhiro Nishida
保坂 俊一
前田 弘
根岸 能久
西田 和弘
Original Assignee
Fuji Photo Film Co Ltd
富士写真フイルム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd, 富士写真フイルム株式会社 filed Critical Fuji Photo Film Co Ltd
Priority to JP2002219645A priority Critical patent/JP2004063751A/en
Priority claimed from EP06008632A external-priority patent/EP1686619A3/en
Priority claimed from US10/617,707 external-priority patent/US7074638B2/en
Publication of JP2004063751A publication Critical patent/JP2004063751A/en
Pending legal-status Critical Current

Links

Images

Abstract

A method of manufacturing a solid-state imaging device that can be reduced in size, is easy to manufacture, and has high reliability.
A first semiconductor substrate 101 formed with a solid-state image sensor, a translucent member 220 connected to the semiconductor substrate so as to have a gap facing a light receiving region of the solid-state image sensor, A solid-state imaging device is configured by integrally forming a second semiconductor substrate 901 formed with a peripheral circuit with an optical member having an optical function such as a lens.
[Selection] Figure 1

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a chip size package (CSP) type solid-state imaging device in which a microlens is integrated on a chip.
[0002]
[Prior art]
A solid-state imaging device including a CCD (Charge Coupled Device) is required to be downsized due to the necessity of application to a mobile phone, a digital camera, and the like.
As one of them, a solid-state imaging device in which a microlens is provided in a light receiving area of a semiconductor chip has been proposed. In such a case, for example, by integrally mounting a solid-state imaging device having a microlens in the light-receiving area so as to have an airtight sealing portion between the light-receiving area of the solid-state imaging device and the microlens, There has been proposed a solid-state imaging device that is miniaturized (Japanese Patent Laid-Open No. 7-202152).
[0003]
According to such a configuration, the mounting area can be reduced, and optical components such as a filter, a lens, and a prism can be bonded to the surface of the hermetic sealing portion, and the light collecting ability of the microlens can be improved. It is possible to reduce the mounting size without causing a decrease.
[0004]
[Problems to be solved by the invention]
However, when mounting such a solid-state imaging device, it is necessary to mount the signal on the support substrate on which the solid-state imaging device is mounted, to make electrical connection and to perform sealing by a method such as bonding, when taking out the signal to the outside. There is. As described above, since the number of man-hours is large, there is a problem that a lot of time is required for mounting.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a solid-state imaging device manufacturing method that is easy to manufacture and highly reliable.
It is another object of the present invention to provide a solid-state imaging device that can be easily connected to the main body.
[0005]
[Means for Solving the Problems]
Therefore, in the present invention, a first semiconductor substrate formed with a solid-state image sensor, and a condensing function connected to the first semiconductor substrate so as to have a gap facing the light receiving region of the solid-state image sensor. A second semiconductor substrate constituting a peripheral circuit is stacked on the light-transmitting member and the first semiconductor substrate.
[0006]
According to this configuration, since the optical member having a light collecting function such as a lens is integrated, there is no need to mount the optical member, and the device is small and highly reliable. Further, since the peripheral circuit boards are also laminated, it is easy to mount and easy to assemble to the apparatus, and the entire apparatus can be miniaturized. In addition, since the translucent member is connected to the first semiconductor substrate so as to have a gap facing the light receiving region of the solid-state imaging device, it is possible to provide a solid-state imaging device that is small and has good light collecting properties. It becomes possible.
[0007]
Desirably, by connecting the translucent member to the first semiconductor substrate via a spacer, the dimensional accuracy of the air gap can be improved, and a solid-state imaging device with good optical characteristics can be obtained. Become.
[0008]
Desirably, if the spacer is made of the same material as the translucent member, it does not cause distortion due to a difference in thermal expansion coefficient with respect to a temperature change with respect to the translucent member. It is possible to extend the service life.
[0009]
Desirably, if the spacer is made of the same material as that of the first semiconductor substrate, the first semiconductor substrate is free from distortion due to a difference in thermal expansion coefficient even with respect to a temperature change. It is possible to extend the service life.
[0010]
Desirably, if the spacer is formed by filling a resin material between the translucent member and the first semiconductor substrate, stress is absorbed by elasticity, and thermal expansion occurs even with respect to temperature change. It is possible to extend the life without causing distortion due to the difference in rate.
[0011]
Accordingly, the method of the present invention includes a step of forming a plurality of solid-state imaging elements on the surface of the first semiconductor substrate, a step of forming a peripheral circuit on the surface of the second semiconductor substrate, and facing each light receiving region of the solid-state imaging element. And joining the optical member having a light condensing function to the first semiconductor substrate so as to have a gap, and joining the second semiconductor substrate, and the joined body obtained in the joining step, And a step of separating each solid-state imaging device.
[0012]
According to such a configuration, the solid-state image pickup device substrate and the optical member having a condensing function are positioned at the wafer level and integrated by mounting in a lump, and then separated for each solid-state image pickup device. Therefore, it is possible to form a solid-state imaging device that is extremely easy to manufacture and highly reliable.
[0013]
Preferably, the step of bonding the optical member includes preparing a light-transmitting substrate having a lens and a recess corresponding to a region where the solid-state imaging element is formed, and attaching the light-transmitting substrate to the first light-transmitting substrate. The semiconductor substrate is bonded to the surface.
[0014]
According to such a configuration, the concave portion can be easily formed so as to have a gap opposite to each light receiving region only by forming an optical member such as a lens and the concave portion on the translucent substrate. The number of parts is small, and manufacturing is easy.
[0015]
Preferably, prior to the bonding step, the method includes a step of forming a protruding portion by selectively removing the surface of the first semiconductor substrate so as to surround the light receiving region, and the protruding portion forms the light receiving region and the light receiving region. A gap is formed between the optical member and the optical member.
[0016]
According to such a configuration, it is possible to provide a solid-state imaging device with high workability and high reliability simply by mounting with a protrusion (spacer) formed in advance on the surface of the first semiconductor substrate. It becomes.
[0017]
Further, the bonding step is characterized in that a gap is formed between the first semiconductor substrate and the optical member through a spacer disposed so as to surround the light receiving region. To do.
[0018]
According to such a configuration, it is possible to easily provide a highly reliable solid-state imaging device by simply sandwiching the spacer.
[0019]
In the separating step, the peripheral edge of the optical member is positioned inward of the peripheral edge of the first semiconductor substrate so that the surface of the peripheral edge of the semiconductor substrate is exposed from the optical member. The method further includes a step of cutting the optical member.
[0020]
According to such a configuration, the electrode can be easily taken out on the exposed surface of the first semiconductor substrate.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0022]
(First embodiment)
This solid-state imaging device has a condensing / imaging function on the sealing cover glass itself, as shown in a sectional view in FIG. 1A and an enlarged sectional view in FIG. By configuring, the size can be further reduced.
The sealing cover glass 220 is formed by forming lens regions having different refractive indexes by ion transfer on the surface of a translucent polycarbonate resin. A spacer 203S is provided on the surface of the solid-state image pickup device substrate 100 including the silicon substrate 101 as the first semiconductor substrate on which the solid-state image pickup device 102 is formed so as to have a gap C corresponding to the light receiving region of the silicon substrate 101. A glass substrate 220 with a lens as an optical member is bonded, a peripheral circuit substrate 901 made of a silicon substrate as a second semiconductor substrate is bonded to the back surface of the solid-state imaging device substrate 100, and a contact pad 118 is formed on the back surface. In addition, the periphery of the silicon substrate 101 is individually separated by dicing.
[0023]
In this example, the bonding pad BP is formed so as to be exposed from the spacer in a part of the region not shown, and constitutes a signal extraction terminal and a current supply terminal. Here, the spacer 203S has a height of 10 to 500 μm, preferably 80 to 120 μm.
[0024]
Here, as shown in FIG. 1B, an enlarged cross-sectional view of the main part of the solid-state image pickup device substrate is a silicon on which a solid-state image pickup device is arranged and an RGB color filter 46 and a microlens 50 are formed. A substrate 101 is used.
[0025]
This solid-state imaging device is formed by forming a channel stopper 28 in a p-well 101b formed on the surface of an n-type silicon substrate 101a, and forming a photodiode 14 and a charge transfer device 33 across the channel stopper. Is. Here, the n-type impurity region 14b is formed in the p + channel region 14a, and the photodiode 14 is formed. In addition, a vertical charge transfer channel 20 made of an n-type impurity region having a depth of about 0.3 μm is formed in the p + channel region 14a, and the gate insulating film 30 made of a silicon oxide film is formed thereon. A vertical charge transfer electrode 32 made of a polycrystalline silicon layer is formed to constitute a charge transfer element 33. A read gate channel 26 formed of a p-type impurity region is formed between the vertical charge transfer channel 20 and the photodiode 14 on the side from which signal charges are read out.
[0026]
The n-type impurity region 14b is exposed along the readout gate channel 26 on the surface of the silicon substrate 101, and the signal charge generated in the photodiode 14 is temporarily accumulated in the n-type impurity region 14b. The data is read out through the read gate channel 26.
[0027]
On the other hand, a channel stopper 28 made of a p + -type impurity region exists between the vertical charge transfer channel 20 and the other photodiodes 14, whereby the photodiodes 14 and the vertical charge transfer channels 20 are electrically separated. In addition, the vertical charge transfer channels 20 are separated from each other so as not to contact each other.
[0028]
Further, the vertical charge transfer electrode 32 is formed so as to cover the readout gate channel 26, expose the n-type impurity region 14b, and expose a part of the channel stopper 28. Signal charges are transferred from the readout gate channel 26 below the electrode to which the readout signal is applied among the vertical charge transfer electrodes 32.
[0029]
The vertical charge transfer electrode 32 and the vertical charge transfer channel 20 constitute a vertical charge transfer device (VCCD) 33 that transfers the signal charge generated at the pn junction of the photodiode 14 in the vertical direction. The surface of the substrate on which the vertical charge transfer electrode 32 is formed is covered with a surface protective film 36, and a light shielding film made of tungsten is formed thereon, and only the light receiving region 40 of the photodiode is opened, and the other regions are shielded from light. It is configured as follows.
[0030]
Further, the upper layer of the vertical charge transfer electrode 32 is covered with a planarizing insulating film 43 for planarizing the surface and a translucent resin film 44 formed on the upper layer, and a filter layer 46 is further formed on the upper layer. Yes. In the filter layer 46, a red filter layer 46R, a green filter layer 46G, and a blue filter layer 46B are sequentially arranged so as to form a predetermined pattern corresponding to each photodiode 14.
[0031]
Further, this upper layer is melted after patterning a transmissive resin containing a photosensitive resin having a refractive index of 1.3 to 2.0 through the planarization insulating film 48 by photolithography, and after being rounded by the surface tension, is cooled. This is covered with a microlens array formed by the microlenses 50.
[0032]
Next, the manufacturing process of this solid-state imaging device is shown in FIGS. 2 (a1) to 2 (d) and FIGS. 3 (a) to 3 (c).
[0033]
As shown in FIG. 2A1, a lens array is formed by an ion transfer method, and a sealing cover glass 220 with a lens array is formed. Here, the sealing cover glass 220 with a lens array can be formed by molding, etching, or the like.
As shown in FIG. 2 (a2), an adhesive layer 202 is formed on the spacer silicon substrate 203 and integrated as shown in FIG. 2 (c).
Etching was then performed using a resist pattern formed by an etching method using photolithography as a mask to form spacers 203 as shown in FIG.
Thereafter, an adhesive layer 207 is formed on the surface of the spacer 203S of the sealing cover glass with lens array 220 formed in the step shown in FIG. 2D (shown in FIG. 3A).
[0034]
On the other hand, as shown in FIG. 3B, a solid-state imaging device substrate 100 formed with a reinforcing plate 701 is prepared. When forming the element substrate, as shown in FIG. 3B, a silicon substrate 101 (here, a 4 to 8 inch wafer is used) is prepared. (Although only one unit is shown in the drawing, a plurality of solid-state image sensors are continuously formed on a single wafer.) Here, on the surface of the silicon substrate 101, a part for dividing each solid-state image sensor. The separation after mounting may be facilitated by a method of forming a cutting groove in a region corresponding to the disconnection by a method such as etching.
Then, by using a normal silicon process, a channel stopper layer is formed, a channel region is formed, and an element region 102 such as a charge transfer electrode is formed. Further, a wiring layer is formed on the surface, and a bonding pad BP made of a gold layer is formed for external connection.
[0035]
Thereafter, as shown in FIG. 3C, alignment is performed using alignment marks formed on the peripheral edge of each substrate, and spacers 203S are formed on the solid-state imaging device substrate 100 in which the element regions are formed as described above. The sealing cover glass 220 with a lens array to which is adhered is placed and heated, and both are integrated by the adhesive layer 207. This step is preferably performed in a vacuum or in an inert gas atmosphere such as nitrogen gas.
[0036]
Further, a conductor layer 117 and a pad 118 are formed on the back side of the solid-state image pickup device substrate 100 so as to be connected to the solid-state image pickup device substrate through the through holes H, as shown in FIG. A solid-state imaging device is formed. A silicon oxide film 119 is formed on the inner wall of the through hole.
In this way, it is possible to obtain a solid-state imaging device that is easy to mount, small, and highly reliable.
[0037]
Moreover, the following embodiment demonstrates the modification of the manufacturing process of this cover glass 220 for sealing with a spacer.
[0038]
(Second Embodiment)
Next, a second embodiment of the present invention will be described.
In this embodiment, as shown in FIGS. 4 (a) and 4 (b), a sealing cover glass 220 with a lens array is prepared, and a recess 225 is formed on the back side by etching to form a spacer 223S integrally. It is characterized by.
[0039]
According to such a configuration, the sealing cover glass 220 with a lens array that can be easily formed with good workability and is highly integrated and has no distortion can be obtained.
[0040]
(Third embodiment)
Next, a third embodiment of the present invention will be described.
First, in this embodiment, a glass substrate 220 with a lens array is prepared as shown in FIG.
Then, as shown in FIG. 5B, a photocurable resin is formed on the surface of the glass substrate with lens array 220 by dispenser or screen printing to form a spacer 223S.
Thus, it is possible to easily obtain a sealing cover glass having a spacer and a through hole.
After that, the mounting process shown in FIGS. 3A to 3C is performed in the same manner as described in the above embodiment, and the solid-state image pickup device substrate is bonded, and the peripheral circuit substrate 901 is bonded. To do. Finally, a through hole is formed, and the solid-state imaging device substrate 100 and the peripheral circuit substrate 901 are electrically connected, and then dicing is performed to obtain the solid-state imaging device shown in FIG. Is possible.
[0041]
(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described.
In the fourth embodiment, as shown in FIGS. 6A1 to 6D, a patterned spacer 203S may be attached to the sealing cover glass 220 with a lens array.
[0042]
(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described.
Further, as shown in FIGS. 7A to 7C, the sealing cover glass 220 with a lens array, the spacer 203S, and the solid-state imaging device substrate 100 may be fixed simultaneously.
[0043]
(Sixth embodiment)
Next, a sixth embodiment of the present invention will be described.
Further, as shown in FIGS. 8A to 8D, the sealing cover glass 220 with a lens array is also applied to a solid-state imaging device in which the peripheral circuit board 901 is laminated via the anisotropic conductive film 115. Is also possible.
Instead of the sealing cover glass 200 made of a plate-shaped body, a sealing cover glass 220 with a lens array may be used.
In addition, for the connection of the peripheral circuit board 901, diffusion bonding using ultrasonic waves, solder bonding, and eutectic bonding by thermocompression bonding are also effective. Furthermore, you may make it underfill with resin.
[0044]
(Seventh embodiment)
Next, a seventh embodiment of the present invention will be described.
Further, as shown in FIG. 9, through-holes penetrating the peripheral circuit board and the solid-state imaging device board may be formed in two portions, and a conductor layer 117 may be formed on the through-holes, and taken out downward. Reference numeral 221 denotes a wiring layer.
[0045]
(Eighth embodiment)
Next, an eighth embodiment of the present invention will be described.
As shown in FIG. 10, it is also effective to form a wiring 221 on the side wall of the spacer.
In manufacturing, a through hole is formed in a spacer, a conductor layer is formed in the through hole, a solid-state imaging device substrate and a sealing cover glass with a lens are bonded together, and then divided by a dicing line including the through hole. Side wall wiring can be easily performed.
[0046]
In the above-described embodiment, the method of bonding the solid-state imaging device substrate and the sealing cover glass using the adhesive layer has been described. However, the method is not limited to this, and the method of pouring the mold resin directly A bonding method and room temperature activated direct bonding are also applicable.
[0047]
Further, when the solid-state imaging device substrate and the sealing cover glass are joined using the adhesive layer, the melted adhesive layer does not flow out by forming a recess (a liquid reservoir) in the joined portion. It is good to do so.
[0048]
As described above, the method of the present invention is easy to manufacture and handle because it is divided into pieces after being mounted together without performing individual positioning or electrical connection such as wire bonding. Even simple.
[0049]
As described above, according to the configuration of the present invention, since positioning is performed at the wafer level and integrated by mounting in a lump, and then separated for each solid-state imaging device, manufacturing is easy and reliable. It is possible to form a solid-state imaging device having a high height.
[0050]
In the above-described embodiment, the method of bonding the glass substrate and the spacer constituting the sealing cover glass and the spacer and bonding the solid-state imaging device substrate and the sealing cover glass using the adhesive layer has been described. However, in all the embodiments, when the spacer and the surface of the solid-state imaging device substrate are made of Si, metal, or inorganic compound, they can be appropriately joined by surface activated room temperature bonding without using an adhesive. When the cover glass is Pyrex and the spacer is silicon, anodic bonding can also be used. When an adhesive layer is used, not only a UV adhesive but also a thermosetting adhesive, a semi-curable adhesive, and a thermosetting combined UV curable adhesive may be used as the adhesive layer.
[0051]
Further, in all the embodiments, as the spacer, in addition to the silicon substrate, 42 alloy, metal, glass, photosensitive polyimide, polycarbonate resin, and the like can be appropriately selected.
[0052]
In addition, when the solid-state imaging device substrate and the sealing cover glass are joined using the adhesive layer, it is preferable that the melted adhesive layer does not flow out by forming a liquid reservoir. The same applies to the joint between the spacer and the solid-state imaging device substrate or the sealing cover glass. The melted adhesive layer flows out by forming a concave or convex portion in the joint and forming a liquid reservoir. Do not do it.
[0053]
In the above-described embodiment, the element formed with the cut groove is separated into individual elements by CMP up to the position of the cut groove. However, grinding, polishing, whole surface etching, or the like can also be used.
[0054]
In the above embodiment, when the reinforcing plate (701) is used, as a material, if necessary, a polyimide resin, ceramic, crystallized glass, a front surface and a back surface are formed of an oxidized silicon substrate, The role of a heat insulating substrate can be given. Further, it may be formed of a moisture-proof sealing material or a light shielding material.
[0055]
Moreover, in the said embodiment, when bonding of a glass substrate and a spacer is required, you may be made to carry out by ultraviolet curing resin, thermosetting resin, these combination, or semi-hardened adhesive application | coating. However, when the adhesive is formed, it is possible to appropriately select supply using a dispenser, screen printing, stamp transfer, and the like.
[0056]
In addition, the examples described in the embodiments can be mutually modified within a range applicable to all forms.
[0057]
In the first embodiment, the wiring layer including the bonding pad is a gold layer. However, the wiring layer is not limited to the gold layer, and may be another metal such as aluminum or another conductor layer such as silicide. Needless to say.
The microlens array can also be formed by forming a transparent resin film on the surface of the substrate and forming a lens layer having a refractive index gradient at a predetermined depth by ion transfer from the surface.
[0058]
【The invention's effect】
As described above, according to the solid-state imaging device of the present invention, the translucent substrate with an optical member such as a lens and the peripheral circuit substrate, and the solid-state imaging device substrate are integrally formed. A highly reliable solid-state imaging device can be provided.
Further, according to the method for manufacturing a solid-state imaging device of the present invention, the solid-state imaging device substrate is positioned at the wafer level with respect to the translucent substrate with an optical member such as a lens and the peripheral circuit substrate, and the external extraction electrode terminal is formed In other words, the solid-state imaging device is integrated by being packaged and then separated for each solid-state imaging device. Therefore, it is possible to form a solid-state imaging device that is easy to manufacture and highly reliable.
[Brief description of the drawings]
FIGS. 1A and 1B are a cross-sectional view and an enlarged cross-sectional view showing a main part of a solid-state imaging device according to a first embodiment of the present invention.
FIG. 2 is a diagram showing a manufacturing process of the solid-state imaging device according to the first embodiment of the present invention.
FIG. 3 is a diagram showing a manufacturing process of the solid-state imaging device according to the first embodiment of the present invention.
FIG. 4 is a diagram illustrating a manufacturing process of the solid-state imaging device according to the second embodiment of the present invention.
FIG. 5 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the third embodiment of the present invention.
FIG. 6 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the fourth embodiment of the present invention.
FIG. 7 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the fifth embodiment of the present invention.
FIG. 8 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the sixth embodiment of the present invention.
FIG. 9 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the seventh embodiment of the present invention.
FIG. 10 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the eighth embodiment of the present invention.
[Explanation of symbols]
100 Solid-state image sensor substrate 101 Silicon substrate 102 Solid-state image sensor 220 Cover glass 221 for sealing Glass substrate 203S Spacer

Claims (8)

  1. A first semiconductor substrate formed with a solid-state imaging device;
    A translucent member having a condensing function connected to the first semiconductor substrate so as to have a gap facing the light receiving region of the solid-state imaging device;
    A solid-state imaging device, wherein a second semiconductor substrate constituting a peripheral circuit is stacked on the first semiconductor substrate.
  2. The solid-state imaging device according to claim 1, wherein the translucent member is connected to the semiconductor substrate via a spacer.
  3. The solid-state imaging device according to claim 2, wherein the spacer is made of the same material as the translucent member.
  4. The solid-state imaging device according to claim 2, wherein the spacer is made of the same material as the first semiconductor substrate.
  5. The solid-state imaging device according to claim 2, wherein the spacer is a resin material filled between the translucent member and the first semiconductor substrate.
  6. The solid-state imaging device according to claim 2, wherein a peripheral surface of the first semiconductor substrate is exposed from the translucent member.
  7. The solid-state imaging device according to claim 6, wherein a connection terminal is provided in the exposed exposed portion.
  8. Forming a plurality of solid-state imaging elements on the surface of the first semiconductor substrate;
    Forming a peripheral circuit on the surface of the second semiconductor substrate;
    Bonding an optical member having a light condensing function to the surface of the first semiconductor substrate and bonding a second semiconductor substrate so as to have a gap facing each light receiving region of the solid-state imaging element;
    And a step of separating the joined body obtained in the joining step for each solid-state imaging device.
JP2002219645A 2002-07-29 2002-07-29 Solid-state image sensing device and its manufacturing method Pending JP2004063751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002219645A JP2004063751A (en) 2002-07-29 2002-07-29 Solid-state image sensing device and its manufacturing method

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JP2002219645A JP2004063751A (en) 2002-07-29 2002-07-29 Solid-state image sensing device and its manufacturing method
EP06008632A EP1686619A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
EP06008630A EP1686617A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
EP08015176A EP1990829A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
EP06008631A EP1686618A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
EP08007679A EP1942522A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
EP03254432A EP1387397A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
US10/617,707 US7074638B2 (en) 2002-04-22 2003-07-14 Solid-state imaging device and method of manufacturing said solid-state imaging device
EP10001345A EP2178112A3 (en) 2002-07-29 2003-07-14 Solid-state imaging device and method of manufacturing the same
CN2009101378365A CN101552281B (en) 2002-07-29 2003-07-29 Solid-state imaging device and method of manufacturing said solid-state imaging device
CN03143658A CN100576556C (en) 2002-07-29 2003-07-29 Solid-state imaging apparatus and make the method for described solid-state imaging apparatus
US11/404,897 US7659136B2 (en) 2002-04-22 2006-04-17 Solid-state imaging device and method of manufacturing said solid-state imaging device
US11/404,901 US7638823B2 (en) 2002-04-22 2006-04-17 Solid-state imaging device and method of manufacturing said solid-state imaging device
US11/404,898 US7411230B2 (en) 2002-04-22 2006-04-17 Solid-state imaging device and method of manufacturing said solid-state imaging device
US11/404,902 US7582505B2 (en) 2002-04-22 2006-04-17 Solid-state imaging device and method of manufacturing said solid-state imaging device

Publications (1)

Publication Number Publication Date
JP2004063751A true JP2004063751A (en) 2004-02-26

Family

ID=31940496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002219645A Pending JP2004063751A (en) 2002-07-29 2002-07-29 Solid-state image sensing device and its manufacturing method

Country Status (2)

Country Link
JP (1) JP2004063751A (en)
CN (1) CN101552281B (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281929A (en) * 2006-04-07 2007-10-25 Iwate Toshiba Electronics Co Ltd Solid-state imaging apparatus and its manufacturing method
JP2009543144A (en) * 2006-07-10 2009-12-03 ショット アクチエンゲゼルシャフトSchott AG Method of manufacturing an optoelectronic component and product manufactured by the method
WO2010041579A1 (en) * 2008-10-10 2010-04-15 シャープ株式会社 Wafer scale lens, wafer scale camera module and electronic device
CN102004296A (en) * 2009-08-28 2011-04-06 夏普株式会社 Optical element module and manufacturing method thereof, electronic element module and manufacturing method thereof, and electronic information device
JP2012509586A (en) * 2008-11-20 2012-04-19 クロメック リミテッド Semiconductor device connection
US8269296B2 (en) 2008-08-28 2012-09-18 Oki Semiconductor Co., Ltd. Camera module and method of producing the same
KR101194452B1 (en) 2004-02-27 2012-10-24 헵타곤 마이크로 옵틱스 피티이. 리미티드 Micro-optics on optoelectronics
US8405756B2 (en) 2008-09-25 2013-03-26 Sharp Kabushiki Kaisha Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
US8482926B2 (en) 2008-09-26 2013-07-09 Sharp Kabushiki Kaisha Optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
US8547470B2 (en) 2008-09-25 2013-10-01 Sharp Kabushiki Kaisha Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
KR101332402B1 (en) 2006-07-10 2013-11-25 쇼오트 아게 Method for packaging components
US9085111B2 (en) 2008-09-25 2015-07-21 Sharp Kabushiki Kaisha Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
JP2015135938A (en) * 2013-12-19 2015-07-27 ソニー株式会社 Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
US10157945B2 (en) 2014-07-17 2018-12-18 Setech Co., Ltd. Solid-state imaging device and method for manufacturing the same
US20190096948A1 (en) * 2016-03-25 2019-03-28 Sony Corporation Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037135B (en) * 2013-03-07 2017-09-22 精材科技股份有限公司 Wafer encapsulation body and forming method thereof
JP2016058532A (en) * 2014-09-09 2016-04-21 ソニー株式会社 Solid-state imaging device, and electronic apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002329850A (en) * 2001-05-01 2002-11-15 Canon Inc Chip size package and its manufacturing method

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101194452B1 (en) 2004-02-27 2012-10-24 헵타곤 마이크로 옵틱스 피티이. 리미티드 Micro-optics on optoelectronics
JP2007281929A (en) * 2006-04-07 2007-10-25 Iwate Toshiba Electronics Co Ltd Solid-state imaging apparatus and its manufacturing method
US8519457B2 (en) 2006-04-07 2013-08-27 Kabushiki Kaisha Toshiba Solid-state image pickup device and a camera module
KR101332402B1 (en) 2006-07-10 2013-11-25 쇼오트 아게 Method for packaging components
JP2009543144A (en) * 2006-07-10 2009-12-03 ショット アクチエンゲゼルシャフトSchott AG Method of manufacturing an optoelectronic component and product manufactured by the method
US8269296B2 (en) 2008-08-28 2012-09-18 Oki Semiconductor Co., Ltd. Camera module and method of producing the same
US9085111B2 (en) 2008-09-25 2015-07-21 Sharp Kabushiki Kaisha Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
US8547470B2 (en) 2008-09-25 2013-10-01 Sharp Kabushiki Kaisha Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
US8405756B2 (en) 2008-09-25 2013-03-26 Sharp Kabushiki Kaisha Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
US8482926B2 (en) 2008-09-26 2013-07-09 Sharp Kabushiki Kaisha Optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device
JP2010093200A (en) * 2008-10-10 2010-04-22 Sharp Corp Wafer scale lens, wafer scale module, and electronic equipment
WO2010041579A1 (en) * 2008-10-10 2010-04-15 シャープ株式会社 Wafer scale lens, wafer scale camera module and electronic device
JP2012509586A (en) * 2008-11-20 2012-04-19 クロメック リミテッド Semiconductor device connection
US9202838B2 (en) 2008-11-20 2015-12-01 Ian Radley Semiconductor device connection
CN102004296A (en) * 2009-08-28 2011-04-06 夏普株式会社 Optical element module and manufacturing method thereof, electronic element module and manufacturing method thereof, and electronic information device
JP2015135938A (en) * 2013-12-19 2015-07-27 ソニー株式会社 Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
US10157945B2 (en) 2014-07-17 2018-12-18 Setech Co., Ltd. Solid-state imaging device and method for manufacturing the same
US20190096948A1 (en) * 2016-03-25 2019-03-28 Sony Corporation Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus
US10680026B2 (en) * 2016-03-25 2020-06-09 Sony Corporation Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus

Also Published As

Publication number Publication date
CN101552281B (en) 2012-10-10
CN101552281A (en) 2009-10-07

Similar Documents

Publication Publication Date Title
US9484385B2 (en) Method for fabricating an image sensor package
US9214592B2 (en) Method of making interposer package for CMOS image sensor
US8896079B2 (en) Camera module having a light shieldable layer
TWI475680B (en) Low profile image sensor package and method
KR101457790B1 (en) Improved back side illuminated image sensor architecture, and method of making same
CA2536799C (en) Semiconductor package and method of manufacturing the same
US9305958B2 (en) Solid-state image sensing apparatus and electronic apparatus to improve quality of an image
US7189954B2 (en) Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers
US7534656B2 (en) Image sensor device and method of manufacturing the same
US7064405B2 (en) Solid state imaging device with inner lens and manufacture thereof
CN101034711B (en) Photo-sensor and method of forming the photo-sensor
EP1364412B1 (en) Digital camera comprising a light-sensitive sensor
US6964886B2 (en) Methods of fabrication for flip-chip image sensor packages
US7414661B2 (en) CMOS image sensor using gradient index chip scale lenses
US8119435B2 (en) Wafer level processing for backside illuminated image sensors
US7759751B2 (en) Module for optical apparatus and method of producing module for optical apparatus
US7858420B2 (en) Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US8092734B2 (en) Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
US8164191B2 (en) Semiconductor device
KR101351145B1 (en) Cfa alignment mark formation in image sensors
US8390003B2 (en) Electronic element wafer module with reduced warping
US8216873B2 (en) Back-illuminated type imaging device and fabrication method thereof
EP0393206B1 (en) Image sensor and method of producing the same
EP1462839B1 (en) Module for optical image capturing device comprising objective lens and image sensor
TWI336590B (en) Semiconductor package, semiconductor module and production method thereof, and electronic device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050208

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060324

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070227

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080430

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080626

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090930