JP2003347529A - Solid-state image pickup device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reliable solid-state image pickup device that can be manufactured easily. <P>SOLUTION: The solid-state image pickup device comprises a semiconductor substrate where a solid-state image pickup element is formed, and a translucent member that opposes the light reception region of the solid-state image pickup element and is connected to the semiconductor substrate in such a manner as intervening in a gap. In this case, a connection terminal is provided on a surface opposite to the surface where the semiconductor substrate is fitted in the translucent member, and is connected to the semiconductor substrate via a through hole provided in the translucent member. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device and a method of manufacturing the same, and more particularly to a chip size package (CSP) type solid-state image pickup device in which microlenses are integrated on a chip.

[0002]

2. Description of the Related Art Solid-state imaging devices including CCDs (Charge Coupled Devices) are increasingly required to be miniaturized due to the necessity of application to mobile phones and digital cameras. As one of them, a solid-state imaging device in which a microlens is provided in a light receiving area of a semiconductor chip has been proposed. In such a case, for example, by integrally mounting a solid-state imaging device having a microlens in the light-receiving area so as to have an airtight sealing portion between the light-receiving area of the solid-state imaging device and the microlens, There has been proposed a solid-state imaging device that is miniaturized (Japanese Patent Laid-Open No. 7-202152).

According to such a configuration, the mounting area can be reduced, and optical components such as a filter, a lens, and a prism can be adhered to the surface of the hermetic sealing portion. It is possible to reduce the mounting size without degrading the optical capacity.

[0004]

However, when mounting such a solid-state image pickup device, when taking out the signal to the outside, it is mounted on a support substrate on which the solid-state image pickup device is mounted, and is electrically connected by a method such as bonding. It is necessary to connect and seal. As described above, since there are many steps (man-hours), there is a problem that a lot of time is required for mounting. The present invention has been made in view of the above circumstances, and an object thereof is to provide a solid-state imaging device manufacturing method that is easy to manufacture and highly reliable. It is another object of the present invention to provide a solid-state imaging device that can be easily connected to the main body.

[0005]

SUMMARY OF THE INVENTION Accordingly, a solid-state imaging device according to the present invention is connected to a semiconductor substrate on which a solid-state imaging element is formed, and the semiconductor substrate so as to have a gap facing the light receiving region of the solid-state imaging element. A translucent member, and a connection terminal is disposed on a surface of the translucent member opposite to the semiconductor substrate mounting surface, and the connection terminal is disposed on the translucent member. It is connected to the semiconductor substrate through a through hole.

According to such a configuration, since the signal can be taken out or energized on the translucent member, it can be easily mounted and assembled to the apparatus, and the entire apparatus can be miniaturized. It becomes possible. In addition, since the translucent member is connected to the semiconductor substrate so as to face the light receiving region of the solid-state imaging element, it is possible to provide a solid-state imaging device that is small and has good light collecting properties. .

Desirably, by connecting a translucent member to the semiconductor substrate through a spacer, the dimensional accuracy of the air gap can be improved, and a low-cost solid-state image pickup device having good optical characteristics is obtained. It becomes possible.

Desirably, if the spacer is made of the same material as the translucent member, distortion due to a difference in thermal expansion coefficient may occur between the translucent member and a temperature change. Therefore, it is possible to extend the service life.

Desirably, if the spacer is made of the same material as the semiconductor substrate, there is no distortion caused by the difference in thermal expansion coefficient with respect to the temperature change between the semiconductor substrate and the long lifetime. Can be achieved.

Preferably, the spacer may be made of a resin material. This resin material may be filled between the solid-state imaging device substrate and the translucent substrate, or may be constituted by a sheet-like resin material. If the spacer is formed by filling a resin material between the translucent member and the semiconductor substrate, the stress is absorbed by elasticity, resulting in a difference in thermal expansion coefficient even with respect to a temperature change. It is possible to extend the life without causing distortion.

Desirably, if the spacer is made of 42 alloy or silicon, the cost is low, and distortion due to a difference in thermal expansion coefficient with respect to a temperature change with the semiconductor substrate may occur. Therefore, it is possible to extend the service life. Other metals, ceramics, inorganic materials, etc. may be used without being limited to 42 alloys.

The method of manufacturing a solid-state image pickup device according to the present invention includes a step of forming a plurality of solid-state image pickup elements on a surface of a semiconductor substrate, and the semiconductor substrate so as to have a gap facing each light receiving region of the solid-state image pickup element Including a step of bonding a translucent member having a through hole formed by filling a surface with a conductive material inside, and a step of separating the bonded body obtained in the bonding step for each solid-state imaging device. Features.

According to such a configuration, positioning is performed at the wafer level, and the light-transmitting member having through holes is integrated by mounting in a lump, and then separated for each solid-state imaging device. Therefore, it is possible to form a solid-state imaging device that is easy to manufacture and highly reliable.

Preferably, the step of bonding the translucent member includes preparing a translucent substrate having a plurality of concave portions at positions corresponding to the formation region of the solid-state imaging device and having a through hole in the vicinity of the concave portion. If the process includes the step of bonding the translucent substrate to the surface of the semiconductor substrate, the number of manufacturing steps can be further reduced and the mounting becomes easy.

According to such a configuration, it is possible to easily form a recess so as to have a gap opposite to each light receiving region and to form an electrode only by forming a recess and a through hole in the translucent substrate. Since it is easy to take out, the number of parts is small and the manufacture is easy.

Preferably, prior to the joining step,
A step of forming a projecting portion on the surface of the semiconductor substrate so as to surround the light receiving region, and if the projecting portion forms a gap between the light receiving region and the translucent member, the semiconductor substrate Thus, it is possible to provide a solid-state imaging device with high reliability easily only by this processing. Note that if the etching process for forming the protrusion is performed before the solid-state image sensor is formed, the solid-state image sensor is less damaged, but photolithography on the uneven substrate surface causes a pattern shift. Sometimes. On the other hand, if the etching process for forming the protruding portion is performed after the formation of the solid-state image sensor, there is some damage to the solid-state image sensor, but high-precision element region formation is performed without hindering the manufacturing process of the solid-state image sensor. Is possible.

Preferably, in the bonding step, a gap is formed between the semiconductor substrate and the translucent member via a spacer disposed so as to surround the light receiving region. It is characterized by.

According to such a configuration, it is possible to easily provide a solid-state imaging device having high reliability by simply inserting a spacer.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) In this solid-state image pickup device, a solid-state image pickup element 102 is formed as shown in a sectional view in FIG. 1A and an enlarged sectional view in a main part in FIG. 1B. A glass substrate 201 as a translucent member is bonded to the surface of a solid-state imaging device substrate 100 made of a silicon substrate 101 as a semiconductor substrate via a spacer 203S so as to have a gap C corresponding to the light receiving region of the silicon substrate 101. And bonding pads of the silicon substrate 101
The conductor layer 20 is formed in the through hole 208 formed in the glass substrate 201 and the spacer 203S so as to be connected to BP.
9 and a pad 210 on the upper surface of the glass substrate.
And a signal extraction terminal and a current supply terminal are formed above. Here, the spacer 203S is 10 to 500 μm, preferably 80
The height is ˜120 μm.

Here, the solid-state imaging device substrate is shown in FIG.
As shown in the enlarged cross-sectional view of the main part in (b), the solid-state imaging device is arranged on the surface and the RGB color filter 4 is arranged.
6 and a silicon substrate 101 on which a microlens 50 is formed.

In this solid-state imaging device, a channel stopper 28 is formed in a p-well 101b formed on the surface of an n-type silicon substrate 101a, and a photodiode 14 and a charge transfer device 33 are formed with the channel stopper interposed therebetween. It is made. Here, the n-type impurity region 14b is formed in the p + channel region 14a, and the photodiode 14 is formed. In addition, a vertical charge transfer channel 20 made of an n-type impurity region having a depth of about 0.3 μm is formed in the p + channel region 14a, and the gate insulating film 30 made of a silicon oxide film is formed thereon. A vertical charge transfer electrode 32 made of a polycrystalline silicon layer is formed to constitute a charge transfer element 33.
A read gate channel 26 formed of a p-type impurity region is formed between the vertical charge transfer channel 20 and the photodiode 14 on the side from which signal charges are read out.

The n-type impurity region 1 is formed along the readout gate channel 26 on the surface of the silicon substrate 101.
4b is exposed, and the signal charge generated in the photodiode 14 is temporarily stored in the n-type impurity region 14b and then read out through the read gate channel 26.

On the other hand, a channel stopper 28 made of a p + type impurity region exists between the vertical charge transfer channel 20 and the other photodiode 14, whereby the photodiode 14 and the vertical charge transfer channel 20 are electrically connected. In addition, the vertical charge transfer channels 20 are separated from each other so as not to contact each other.

Further, the vertical charge transfer electrode 32 is formed so as to cover the readout gate channel 26, expose the n-type impurity region 14b, and expose a part of the channel stopper 28. Signal charges are transferred from the readout gate channel 26 below the electrode to which the readout signal is applied among the vertical charge transfer electrodes 32.

The vertical charge transfer electrode 32 is connected to the pn of the photodiode 14 together with the vertical charge transfer channel 20.
A vertical charge transfer device (VCCD) 33 is configured to transfer the signal charge generated at the junction in the vertical direction. The surface of the substrate on which the vertical charge transfer electrode 32 is formed is covered with a surface protective film 36, and a light shielding film made of tungsten is formed thereon, and only the light receiving region 40 of the photodiode is opened, and the other regions are shielded from light. It is configured as follows.

Further, the upper layer of the vertical charge transfer electrode 32 is covered with a flattening insulating film 43 for flattening the surface and a translucent resin film 44 formed thereon, and a filter layer 46 is further formed thereon. Is formed. Filter layer 4
6, a red filter layer 46 </ b> R, a green filter layer 46 </ b> G, and a blue filter layer 46 </ b> B are sequentially arranged so as to form a predetermined pattern corresponding to each photodiode 14.

Further, the upper layer is melted by patterning by photolithography a transparent resin containing a photosensitive resin having a refractive index of 1.3 to 2.0 through the planarization insulating film 48 and rounded by surface tension. It is covered with a microlens array composed of microlenses 50 formed by post-cooling.

Next, the manufacturing process of the solid-state imaging device will be described. This method is integrated after positioning at the wafer level and mounting in a lump as shown in FIGS. 2 (a1) to 2 (f) and FIGS. 3 (a) to 3 (e). Separate for each solid-state image sensor,
This is based on the so-called wafer level CSP method.
(Although only one unit is shown in the drawing, a plurality of solid-state imaging elements are continuously formed on one wafer.) In this method, a spacer 203S is formed in advance and a through-hole that penetrates the glass substrate and the spacer is formed. A sealing cover glass with a spacer 200 in which holes are formed is used.

That is, in this method, the spacer 20 is attached to the glass substrate 201 constituting the sealing cover glass 200.
3S is attached, and in that state, a through hole 208 is formed so as to penetrate the spacer and the glass substrate, a conductor layer is formed thereon, and a signal extraction terminal and a current supply terminal are provided on the surface of the sealing cover glass. It is characterized by forming.

First, as shown in FIG. 2A1, a silicon substrate 203 having a thickness of 10 to 500 μm for preparing a spacer is prepared. Next, as shown in FIG. 2 (a2), a glass substrate 201 for forming the sealing cover glass 200 is prepared. Then, as shown in FIG. 2B, an adhesive layer 202 is applied to the surface of the substrate 203.

Thereafter, as shown in FIG. 2C, a silicon substrate 203 coated with an adhesive layer 202 is adhered to the surface of the glass substrate 201.

Subsequently, as shown in FIG. 2D, a resist pattern is formed by photolithography, and RIE (reactive ion etching) is performed using the resist pattern as a mask, so that a region corresponding to the photodiode, that is, a light receiving region ( An adhesive is applied in advance so as to remove the recess 205 including the region corresponding to 40) in FIG. 1B, or after RIE, removal treatment is performed using oxygen plasma or the like.

Subsequently, as shown in FIG. 2E, a resist pattern is formed by photolithography, and RIE (reactive ion etching) is performed by using the resist pattern as a mask, so that the spacer 203S and the glass substrate 2 are formed.
A through hole 208 is formed so as to penetrate 01.

If necessary, a silicon oxide film (not shown) is formed at least on the inner wall of the spacer made of silicon by CVD. Note that this step is not necessary when the spacer is formed of an insulator such as glass or resin. Further, a light shielding film may be formed on the inner wall or the outer wall of the spacer.

Thereafter, as shown in FIG. 3A, the conductor layer 209 is formed by vacuum screen printing using a conductive paste such as silver paste or copper paste or metal plating on the inner wall of the through hole whose inner wall is insulated. And a through contact region penetrating the spacer 203S and the glass substrate 201 is formed.

Then, as shown in FIG. 3B, a gold bonding pad 21 is connected to the through contact region on the front and back surfaces of the glass substrate with spacers.
0, 211 or bump 212 is formed. Here, when forming the film, a gold thin film is formed on the front surface and the back surface and patterned by an etching method using photolithography, or screen printing, selective plating, or the like can be applied.

Further, as shown in FIG. 3C, an anisotropic conductive resin film 213 is applied.

On the other hand, as shown in FIG.
A solid-state imaging device substrate 100 formed with 01 is prepared.

Then, as shown in FIG. 3E, alignment is performed with alignment marks formed on the peripheral edge of each substrate, and a flat glass substrate is formed on the solid-state imaging device substrate 100 formed as described above. 201 to spacer 20
The cover glass 200 to which 3S is bonded is placed and heated, and both are integrated by the anisotropic conductive film 213. During this integration, ultrasonic diffusion bonding,
Solder bonding, eutectic bonding, etc. are also applicable.

Thereafter, along the dicing line DC,
The entire apparatus is diced and divided into individual solid-state imaging devices. In this way, a solid-state imaging device in which a contact region such as a bonding pad is formed on the sealing cover glass is very easily and highly workable.

In this way, since the individual parts are separated after being mounted together without performing individual positioning or electrical connection such as wire bonding, manufacturing is easy and handling is easy. It is.

In addition, a groove (not shown) is formed in the glass substrate 201 in advance, and after mounting, the surface is removed to a depth reaching the groove by a method such as CMP. It can be easily divided.

Further, it can be easily formed with good workability. In addition, individual solid-state imaging devices can be formed by simply cutting or polishing while the element formation surface is sealed in the gap C by bonding, so that there is little damage to the devices and no dust contamination. It is possible to provide a solid-state imaging device having a high height.

Further, the silicon substrate is removed by CMP to about 2
Since the thickness is reduced to a depth of a factor of 1, the size and thickness can be reduced. Furthermore, since the thickness is reduced after bonding with the glass substrate, it is possible to prevent a decrease in mechanical strength.

As described above, according to the configuration of the present invention, since positioning is performed at the wafer level and integrated by mounting in a lump, and then separated for each solid-state imaging device, manufacturing is easy. In addition, a highly reliable solid-state imaging device can be formed.

In the first embodiment, the wiring layer including the bonding pad is composed of a gold layer. However, the present invention is not limited to the gold layer, and other metal layers such as aluminum or other conductor layers such as silicide. But it goes without saying. The microlens array can also be formed by forming a transparent resin film on the surface of the substrate and forming a lens layer having a refractive index gradient at a predetermined depth by ion transfer from the surface.

As the spacer, a silicon substrate, glass, polycarbonate or the like can be appropriately selected.

(Second Embodiment) Next, a second embodiment of the present invention will be described. In the first embodiment, the solid-state imaging device has been described in which a through-hole penetrating the glass substrate and the spacer is formed, and a contact region such as a bonding pad is formed on the sealing cover glass. In the form, this modification will be described.

First, the present embodiment is characterized by the formation of a through hole in a spacer. As shown in FIG. 4A, a glass substrate 201 is prepared. And FIG.
As shown in (b), on the surface of the glass substrate 201,
A photocurable resin is formed by stereolithography, and the spacer 213 is formed.
Form.

Thereafter, as shown in FIG. 4C, a through hole 208 is formed by an etching method using photolithography. Thus, it is possible to easily obtain a sealing cover glass having a spacer and a through hole.

After that, the mounting process shown in FIGS. 3A to 3E is executed in the same manner as described in the first embodiment, and is bonded to the solid-state image pickup device substrate, followed by dicing. By performing the above, it is possible to obtain the solid-state imaging device shown in FIG.

According to such a method, the spacer is easily formed. In this embodiment, a photo-curing resin is used, but the adhesive itself may be used. Since the glass substrate and the spacer are integrally formed, it is possible to reduce warpage and distortion, and manufacture is also easy.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
The embodiment will be described. In the first embodiment, a silicon substrate for spacer formation is attached to the glass substrate and patterned, but in this embodiment, the glass substrate is etched in one etching process. Thus, the recess and the through hole may be formed simultaneously. Other parts are formed in the same manner as in the first embodiment.

First, in this embodiment, a glass substrate 201 is prepared as shown in FIG. And FIG.
As shown in (b), a resist pattern R is formed on the front surface and the back surface of the glass substrate 201, and the regions where through holes are to be formed have openings on both the front and back surfaces.
In the region where the (cutting groove 204 if necessary) is to be formed, an opening is provided only on the back surface side.

Thereafter, as shown in FIG. 5 (c), the glass substrate is etched from both sides using the resist patterns on the front and back sides as masks, so that a recess 205 and a cutting groove (not shown) are formed.
And the through hole 208 are formed simultaneously.

Thus, it is possible to easily obtain a sealing cover glass in which spacers are integrally formed and through holes are formed. After that, the mounting process shown in FIGS. 3A to 3E is executed in the same manner as described in the first embodiment, and is bonded to the solid-state imaging device substrate, and then dicing is performed. As a result, it is possible to obtain the solid-state imaging device shown in FIG. Since the glass substrate and the spacer are integrally formed, it is possible to reduce warpage and distortion, and manufacture is also easy.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described.
The embodiment will be described. In the first embodiment, a silicon substrate for spacer formation is attached to the glass substrate and patterned, but in this embodiment, the spacer already patterned on the glass substrate 201 is used. 203S is pasted, and finally a through hole is formed by an etching process. Other parts are formed in the same manner as in the first embodiment.

First, in this embodiment, a glass substrate 201 is prepared as shown in FIG. On the other hand, FIG.
As shown in (a2), a silicon substrate 203 for spacer formation is prepared. And as shown in FIG.
The silicon substrate 203 is processed by an etching method using photolithography to obtain a spacer 203S.

Thereafter, as shown in FIG. 6C, an adhesive 202 is applied to the patterned spacer surface. Then, as shown in FIG. 6D, the spacer 203 </ b> S is attached while being aligned with the glass substrate 201. Thereafter, as shown in FIG. 6E, the through hole 208 is etched by an etching method using photolithography.
Form.

In this way, a sealing cover glass in which a spacer is adhered and a through hole is formed can be easily obtained.

If necessary, a silicon oxide film (not shown) is formed at least on the inner wall of the spacer made of silicon by CVD. Note that this step is not necessary when the spacer is formed of an insulator such as glass or resin. Further, a light shielding film may be formed on the inner wall or the outer wall of the spacer.

After that, the mounting process shown in FIGS. 3A to 3E is executed in the same manner as described in the first embodiment, and is bonded to the solid-state image pickup device substrate, followed by dicing. By performing the above, it is possible to obtain the solid-state imaging device shown in FIG.

It should be noted that the glass substrate and the spacer may be bonded together by applying an ultraviolet curable resin, a thermosetting resin, a combination thereof, or semi-cured adhesive application. In forming this adhesive, it is possible to appropriately select supply with a dispenser, screen printing, stamp transfer, and the like.

Further, as shown in FIG. 6C, the light shielding film 215 may be formed by a method such as sputtering a tungsten film on the inner wall of the recess of the spacer. This makes it possible to obtain good imaging characteristics without providing a separate light shielding film.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described.
The embodiment will be described. In the first embodiment, an example is described in which a silicon substrate for spacer formation is attached to a glass substrate, this is patterned, and finally a through-hole penetrating the glass substrate and the spacer is formed by etching. In this embodiment, FIG.
As shown in (a1) to (f), the silicon substrate is etched to form a shape, and the spacer 203S formed up to the through hole 208a shown in FIG. 7 (e1) and the through hole 208b shown in FIG. 7 (b2) are formed. The formed glass substrate 201 is aligned using the alignment mark at the wafer level, and bonded using the adhesive layer 202. Other portions are formed in the same manner as in the twenty-eighth embodiment.

In this case, it is also possible to form a light shielding film (215) on the inner wall where the concave portion of the spacer is desired. According to such a method, since the through holes are individually formed and bonded, alignment is necessary, but since the aspect ratio may be about half, the formation of the through holes becomes easy.

After that, the mounting process shown in FIGS. 3A to 3E is executed in the same manner as described in the first embodiment, and is bonded to the solid-state image pickup device substrate, and then dicing is performed. By performing the above, it is possible to obtain the solid-state imaging device shown in FIG. In addition, after forming a conductor layer in each through-hole of the spacer 203S and the glass substrate 201, both may be aligned and bonded.

(Sixth Embodiment) Next, a sixth embodiment of the present invention will be described.
The embodiment will be described. In the first embodiment, a silicon substrate for spacer formation is attached to a glass substrate, a conductor layer 209 is formed in a through hole that penetrates the glass substrate and the spacer, and then the solid-state imaging device substrate 100 is formed. In this embodiment, FIG. 8 is attached.
As shown to (a)-(d), the said 1st thru | or 4th is carried out to the solid-state image sensor substrate 100 formed by sticking the reinforcement board 701 on the back surface.
The glass substrate 200 with a spacer formed with the through hole 208 formed in the embodiment is aligned and bonded at the wafer level, and then the through hole 2
The conductive layer 209 is formed in 08. A bonding pad 210 is formed so as to be connected to the conductor layer 209. Other portions are formed in the same manner as in the twenty-eighth embodiment. Again, when the conductor layer 209 is embedded, it can be easily formed by vacuum screen printing using a conductive paste such as copper paste or metal plating.

In the above-described embodiment, the bonding between the glass substrate constituting the sealing cover glass and the spacer and the bonding between the solid-state imaging device substrate and the sealing cover glass are performed using the adhesive layer. However, in all the embodiments, when the surface of the spacer and the solid-state imaging device substrate is Si, metal, or inorganic compound, it can be appropriately joined by surface activated room temperature bonding without using an adhesive. . If the cover glass is Pyrex (registered trademark), anodic bonding can also be used when the spacer is Si. When the adhesive layer is used, not only the UV adhesive but also a thermosetting adhesive, a semi-curable adhesive, and a thermosetting combined UV curable adhesive may be used as the adhesive layer.

Further, as described in the first embodiment,
In all the embodiments, as the spacer, in addition to the silicon substrate, 42 alloy, metal, glass, photosensitive polyimide, polycarbonate resin, and the like can be appropriately selected.

Further, when the solid-state image pickup device substrate and the sealing cover glass are joined using the adhesive layer, it is possible to prevent the molten adhesive layer from flowing out by forming a liquid reservoir. Good. The same applies to the joint between the spacer and the solid-state imaging device substrate or the sealing cover glass. The melted adhesive layer flows out by forming a concave or convex portion in the joint and forming a liquid reservoir. Do not do it.

In the above-described embodiment, the element having the cut groove formed is separated into the individual elements by CMP up to the position of the cut groove. However, grinding, polishing, whole surface etching, or the like can also be used. It is.

In the above embodiment, the reinforcing plate (7
In the case of using (01), the material can serve as a heat insulating substrate, if necessary, if it is composed of polyimide resin, ceramic, crystallized glass, an oxidized silicon substrate on the front and back surfaces, and the like. Moreover, you may make it form with a moisture-proof sealing material and a light-shielding material.

As described above, when it is necessary to bond a glass substrate and a spacer, an ultraviolet curable resin,
You may make it perform by thermosetting resin or these combination, or a semi-hardened adhesive application. In forming this adhesive, it is possible to appropriately select supply with a dispenser, screen printing, stamp transfer, and the like.

In addition, the examples described in the embodiments can be mutually modified within a range applicable to all forms.

[0077]

As described above, according to the solid-state imaging device of the present invention, a through hole is formed so as to penetrate the spacer and the sealing cover glass, and an electrode is taken out on the sealing cover glass. Since the terminal is provided, the connection with the outside is easy and the size can be reduced. Further, according to the method for manufacturing a solid-state imaging device of the present invention, the external positioning is performed on the sealing cover glass by positioning at the wafer level, forming a through hole so as to penetrate the spacer and the sealing cover glass. Including the formation of the electrode terminal for extraction, the solid-state image pickup device is integrated by mounting in a lump and then separated for each solid-state image pickup device, thereby forming a solid-state image pickup device that is easy to manufacture and highly reliable. It becomes possible.

[Brief description of the drawings]

FIGS. 1A and 1B are a cross-sectional view and an enlarged cross-sectional view showing a main part of a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a manufacturing process of the solid-state imaging device according to the first embodiment of the present invention.

FIG. 3 is a diagram showing a manufacturing process of the solid-state imaging device according to the first embodiment of the present invention.

FIG. 4 is a diagram illustrating a manufacturing process of the solid-state imaging device according to the second embodiment of the present invention.

FIG. 5 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the third embodiment of the present invention.

FIG. 6 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the fourth embodiment of the present invention.

FIG. 7 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the fifth embodiment of the present invention.

FIG. 8 is a diagram illustrating manufacturing steps of the solid-state imaging device according to the sixth embodiment of the present invention.

[Explanation of symbols]

100 Solid-state image sensor substrate 101 Silicon substrate 102 Solid-state image sensor 200 Cover glass for sealing 201 glass substrate 203S spacer

Continued front page    (72) Inventor Negishi Nohisa             210 Nakanuma, Minamiashigara City, Kanagawa Prefecture Fuji Photo             Within Film Co., Ltd. (72) Inventor Shunichi Hosaka             210 Nakanuma, Minamiashigara City, Kanagawa Prefecture Fuji Photo             Within Film Co., Ltd. F-term (reference) 4M118 AB01 BA10 BA13 CA02 CA03                       CA32 GC07 GD03 HA02 HA11                       HA26 HA29 HA30                 5C024 BX01 CY47 EX22 EX24 EX43                       EX51

Claims (10)

[Claims] 1. A semiconductor substrate formed with a solid-state imaging device, and a translucent member connected to the semiconductor substrate so as to have a gap facing the light-receiving region of the solid-state imaging device, A connection terminal is disposed on a surface of the translucent member facing the semiconductor substrate mounting surface, and the connection terminal is electrically connected to the semiconductor substrate through a through hole disposed in the translucent member. A solid-state imaging device characterized by being connected to each other. 2. The solid-state imaging device according to claim 1, wherein the translucent member is connected to the semiconductor substrate through a spacer. 3. The solid-state imaging device according to claim 2, wherein the spacer is made of the same material as that of the translucent member. 4. The solid-state imaging device according to claim 2, wherein the spacer is made of the same material as the semiconductor substrate. 5. The solid-state imaging device according to claim 2, wherein the spacer is made of a resin material. 6. The solid-state imaging device according to claim 1, wherein the spacer is made of 42 alloy or silicon. 7. A step of forming a plurality of solid-state imaging elements on the surface of the semiconductor substrate, and a surface of the semiconductor substrate is filled with a conductive material so as to have a gap facing each light receiving region of the solid-state imaging element. A method for manufacturing a solid-state imaging device, comprising: a step of bonding a translucent member having a through-hole formed; and a step of separating the joined body obtained in the bonding step for each solid-state imaging device. . 8. The step of bonding the translucent member includes preparing a translucent substrate having a plurality of concave portions at positions corresponding to the formation region of the solid-state imaging device and having a through hole in the vicinity of the concave portion. The method for manufacturing a solid-state imaging device according to claim 7, comprising: a step; and a step of bonding the translucent substrate to the surface of the semiconductor substrate. 9. A step of forming a projecting portion on the surface of the semiconductor substrate so as to surround the light receiving region prior to the joining step, and the projecting portion between the light receiving region and the translucent member. 9. The method for manufacturing a solid-state imaging device according to claim 8, wherein a gap is formed. 10. The bonding step is such that a gap is formed between the semiconductor substrate and the translucent member via a spacer disposed so as to surround the light receiving region. The method for manufacturing a solid-state imaging device according to claim 8, wherein: