JP5046451B2 - 半導体表示装置の作製方法 - Google Patents

半導体表示装置の作製方法 Download PDF

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Publication number
JP5046451B2
JP5046451B2 JP2001288483A JP2001288483A JP5046451B2 JP 5046451 B2 JP5046451 B2 JP 5046451B2 JP 2001288483 A JP2001288483 A JP 2001288483A JP 2001288483 A JP2001288483 A JP 2001288483A JP 5046451 B2 JP5046451 B2 JP 5046451B2
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Japan
Prior art keywords
gate electrode
layer
region
film
forming
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JP2001288483A
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Japanese (ja)
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JP2002190479A5 (https=
JP2002190479A (ja
Inventor
英人 大沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001288483A priority Critical patent/JP5046451B2/ja
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Publication of JP2002190479A5 publication Critical patent/JP2002190479A5/ja
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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001288483A 2000-09-22 2001-09-21 半導体表示装置の作製方法 Expired - Fee Related JP5046451B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001288483A JP5046451B2 (ja) 2000-09-22 2001-09-21 半導体表示装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000289457 2000-09-22
JP2000-289457 2000-09-22
JP2000289457 2000-09-22
JP2001288483A JP5046451B2 (ja) 2000-09-22 2001-09-21 半導体表示装置の作製方法

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JP2002190479A JP2002190479A (ja) 2002-07-05
JP2002190479A5 JP2002190479A5 (https=) 2008-09-25
JP5046451B2 true JP5046451B2 (ja) 2012-10-10

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040011275A (ko) 2002-07-30 2004-02-05 엘지전자 주식회사 휴대용 영상단말기의 카메라 구조
JP2005333107A (ja) * 2004-04-21 2005-12-02 Mitsubishi Electric Corp 半導体装置、画像表示装置および半導体装置の製造方法
CN104241389B (zh) * 2013-06-21 2017-09-01 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
KR102555788B1 (ko) * 2018-04-30 2023-07-17 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
US12237389B2 (en) * 2018-11-02 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN114203726B (zh) * 2021-11-18 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
US12224354B2 (en) 2021-11-18 2025-02-11 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Oxide thin film transistor, display panel and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474604B2 (ja) * 1993-05-25 2003-12-08 三菱電機株式会社 薄膜トランジスタおよびその製法
JPH0945930A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜トランジスタ及びその製造方法
JP2000091591A (ja) * 1998-09-17 2000-03-31 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、薄膜トランジスタを用いたｃ−ｍｏｓインバータ回路、及びそれらの製造方法
JP4531175B2 (ja) * 1998-12-03 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4869464B2 (ja) * 1998-12-25 2012-02-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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JP2002190479A (ja) 2002-07-05

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