JP5046451B2 - 半導体表示装置の作製方法 - Google Patents
半導体表示装置の作製方法 Download PDFInfo
- Publication number
- JP5046451B2 JP5046451B2 JP2001288483A JP2001288483A JP5046451B2 JP 5046451 B2 JP5046451 B2 JP 5046451B2 JP 2001288483 A JP2001288483 A JP 2001288483A JP 2001288483 A JP2001288483 A JP 2001288483A JP 5046451 B2 JP5046451 B2 JP 5046451B2
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- gate electrode
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- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000012535 impurity Substances 0.000 claims description 181
- 238000001312 dry etching Methods 0.000 claims description 88
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 82
- 150000002500 ions Chemical class 0.000 claims description 65
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 33
- 239000003870 refractory metal Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 253
- 239000010408 film Substances 0.000 description 224
- 238000005468 ion implantation Methods 0.000 description 86
- 230000008569 process Effects 0.000 description 53
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 41
- 230000003287 optical effect Effects 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 230000001133 acceleration Effects 0.000 description 17
- 239000004973 liquid crystal related substance Substances 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 238000007687 exposure technique Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
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- 238000000206 photolithography Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007725 thermal activation Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001288483A JP5046451B2 (ja) | 2000-09-22 | 2001-09-21 | 半導体表示装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000289457 | 2000-09-22 | ||
| JP2000-289457 | 2000-09-22 | ||
| JP2000289457 | 2000-09-22 | ||
| JP2001288483A JP5046451B2 (ja) | 2000-09-22 | 2001-09-21 | 半導体表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002190479A JP2002190479A (ja) | 2002-07-05 |
| JP2002190479A5 JP2002190479A5 (enExample) | 2008-09-25 |
| JP5046451B2 true JP5046451B2 (ja) | 2012-10-10 |
Family
ID=26600589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001288483A Expired - Fee Related JP5046451B2 (ja) | 2000-09-22 | 2001-09-21 | 半導体表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5046451B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040011275A (ko) | 2002-07-30 | 2004-02-05 | 엘지전자 주식회사 | 휴대용 영상단말기의 카메라 구조 |
| JP2005333107A (ja) * | 2004-04-21 | 2005-12-02 | Mitsubishi Electric Corp | 半導体装置、画像表示装置および半導体装置の製造方法 |
| CN104241389B (zh) | 2013-06-21 | 2017-09-01 | 上海和辉光电有限公司 | 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法 |
| KR102555788B1 (ko) * | 2018-04-30 | 2023-07-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
| CN114203726B (zh) * | 2021-11-18 | 2023-08-22 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
| US12224354B2 (en) | 2021-11-18 | 2025-02-11 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oxide thin film transistor, display panel and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3474604B2 (ja) * | 1993-05-25 | 2003-12-08 | 三菱電機株式会社 | 薄膜トランジスタおよびその製法 |
| JPH0945930A (ja) * | 1995-07-28 | 1997-02-14 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
| JP2000091591A (ja) * | 1998-09-17 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、薄膜トランジスタを用いたｃ−ｍｏｓインバータ回路、及びそれらの製造方法 |
| JP4531175B2 (ja) * | 1998-12-03 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4869464B2 (ja) * | 1998-12-25 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
-
2001
- 2001-09-21 JP JP2001288483A patent/JP5046451B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002190479A (ja) | 2002-07-05 |
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