JP5042233B2 - n形ドーパント拡散を最小限にするための被着された半導体構造体および製造方法 - Google Patents
n形ドーパント拡散を最小限にするための被着された半導体構造体および製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 239000002019 doping agent Substances 0.000 title claims description 75
- 238000000034 method Methods 0.000 title description 28
- 238000009792 diffusion process Methods 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 8
- 230000015654 memory Effects 0.000 claims abstract description 102
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 64
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 59
- 230000002441 reversible effect Effects 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims description 58
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 47
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 47
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 239000000956 alloy Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 28
- 230000008859 change Effects 0.000 claims description 7
- -1 nitride compound Chemical class 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium dioxide Chemical compound O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- 229910017947 MgOx Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 170
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 238000000151 deposition Methods 0.000 description 23
- 230000008021 deposition Effects 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 239000003989 dielectric material Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 230000006399 behavior Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
Claims (19)
- 層積層体を含む半導体デバイスであって、前記層積層体が、
基板上方の被着された高濃度にnドープされた半導体材料の第1の層であって、第1の層は、厚さが少なくとも約50オングストロームである第1の層と、
高濃度にnドープされていない半導体材料の第2の層であって、第2の層の半導体材料は、少なくとも20at%ゲルマニウムであるシリコン−ゲルマニウム合金であり、第2の層は、厚さが少なくとも約100オングストロームであって、第1の層の上方にありかつこれと接触している第2の層と、
高濃度にnドープされておらず第2の層の上方にありかつこれと接触している半導体材料の第3の層であって、第3の層の半導体材料は、シリコンまたは10at%ゲルマニウム未満であるシリコン−ゲルマニウム合金である第3の層と、を含み、
第1、第2、および第3の層が、半導体デバイス中にある半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、
第3の層の半導体材料が、せいぜい5at%ゲルマニウムである半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、
第1、第2、および第3の層が、垂直配向された接合ダイオードの一部である半導体デバイス。 - 請求項3記載の半導体デバイスにおいて、
ダイオードがp−i−nダイオードであり、第3の層がドープされていないかまたは低濃度にドープされている半導体デバイス。 - 請求項3記載の半導体デバイスにおいて、
支柱を形成するために第1、第2、および第3の層がパターン形成およびエッチングされている半導体デバイス。 - 請求項5記載の半導体デバイスにおいて、
支柱が底部導体と頂部導体との間に垂直に配置され、不揮発性メモリセルが底部導体の一部、支柱、および頂部導体の一部を含む半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、
第1の層が、少なくとも約5×1019ドーパント原子/cm3 のドーパント濃度にドープされる半導体デバイス。 - 請求項7記載の半導体デバイスにおいて、
第3の層が、n形ドーパントの約5×10 17 ドーパント原子/cm3 未満のドーパント濃度を有する半導体デバイス。 - 基板上方に形成された不揮発性メモリセルであって、
基板上方の底部導体の一部と、
底部導体上方の頂部導体の一部と、
底部導体と頂部導体との間に垂直に配置されたダイオードであって、
i)高濃度にnドープされた半導体材料の第1の被着された層と、
ii)高濃度にnドープされていない半導体材料の第2の被着された層であって、第2の層の半導体材料は、少なくとも20at%ゲルマニウムのシリコン−ゲルマニウム合金であり、第2の層は、第1の層の上方にありかつこれと接触して被着される第2の層と、
iii)高濃度にnドープされていない半導体材料の第3の被着された層であって、第3の半導体材料は、シリコンまたは10at%ゲルマニウム未満であるシリコン−ゲルマニウム合金であり、第3の層は、第2の層の上方にありかつこれと接触している第3の層と、を含むダイオードと、
を含む不揮発性メモリセル。 - 請求項9記載の不揮発性メモリセルにおいて、
第1の層の半導体材料が、少なくとも10at%ゲルマニウムであるシリコン−ゲルマニウム合金である不揮発性メモリセル。 - 請求項9記載の不揮発性メモリセルにおいて、
第1の層が、少なくとも約5×1019ドーパント原子/cm3 のドーパント濃度にドープされる不揮発性メモリセル。 - 請求項11記載の不揮発性メモリセルにおいて、
第3の層が、n形ドーパントの約5×1017ドーパント原子/cm3 未満のドーパント濃度を有する不揮発性メモリセル。 - 請求項11記載の不揮発性メモリセルにおいて、
第2の層が、n形ドーパントの約5×1017ドーパント原子/cm3 未満のドーパント濃度を有する不揮発性メモリセル。 - 請求項9記載の不揮発性メモリセルにおいて、
第3の層の半導体材料が、シリコンまたはせいぜい5at%ゲルマニウムであるシリコン−ゲルマニウム合金である不揮発性メモリセル。 - 請求項9記載の不揮発性メモリセルにおいて、
ダイオードが、支柱の形状である不揮発性メモリセル。 - 請求項9記載の不揮発性メモリセルにおいて、
メモリセルが可逆的状態変更素子をさらに含み、前記可逆的状態変更素子は、ダイオードと底部導体との間またはダイオードと頂部導体との間に配置される不揮発性メモリセル。 - 請求項16記載の不揮発性メモリセルにおいて、
可逆的状態変更素子が、NiO、Nb2 O5 、TiO2 、HfO2 、Al2 O3 、CoO、MgOx 、CrO2 、VO、BN、およびAlNから成る群から選ばれる抵抗率切換金属酸化物または窒化物化合物の層を含む不揮発性メモリセル。 - 請求項9記載の不揮発性メモリセルにおいて、
第2の層が、少なくとも約100オングストロームの厚さである不揮発性メモリセル。 - モノリシックな三次元メモリアレイであって、
a)基板上方に形成された第1のメモリレベルであって、
i)複数の実質的に平行で、実質的に共平面の底部導体と、
ii)複数の実質的に平行で、実質的に共平面の頂部導体と、
iii)複数の半導体接合ダイオードであって、各ダイオードは、底部導体の1つと頂部導体の1つとの間に垂直に配置され、かつ高濃度にnドープされた半導体材料の第1の層と、低濃度にnドープされるか、pドープされるか、またはドープされていないシリコン−ゲルマニウム合金の第2の層であって、第2の層は、少なくとも20at%ゲルマニウムであり、第1の層の上方にある第2の層と、低濃度にnドープされるか、pドープされるか、またはドープされていないシリコンまたはシリコン−ゲルマニウム合金の第3の層であって、第3の層は、10at%ゲルマニウム未満であり、第2の層の上方にある第3の層と、を含む複数の半導体接合ダイオードと、を含む第1のメモリレベルと、
b)第1のメモリレベル上方にモノリシック的に形成された少なくとも1つの第2のメモリレベルと、
を含むモノリシックな三次元メモリアレイ。
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PCT/US2006/046133 WO2007067448A1 (en) | 2005-12-09 | 2006-11-30 | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
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Families Citing this family (149)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7767499B2 (en) * | 2002-12-19 | 2010-08-03 | Sandisk 3D Llc | Method to form upward pointing p-i-n diodes having large and uniform current |
US7176064B2 (en) * | 2003-12-03 | 2007-02-13 | Sandisk 3D Llc | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide |
US8018024B2 (en) | 2003-12-03 | 2011-09-13 | Sandisk 3D Llc | P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
US7682920B2 (en) * | 2003-12-03 | 2010-03-23 | Sandisk 3D Llc | Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
US7812404B2 (en) | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US7834338B2 (en) | 2005-11-23 | 2010-11-16 | Sandisk 3D Llc | Memory cell comprising nickel-cobalt oxide switching element |
US7829875B2 (en) | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7808810B2 (en) | 2006-03-31 | 2010-10-05 | Sandisk 3D Llc | Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US7586773B2 (en) | 2007-03-27 | 2009-09-08 | Sandisk 3D Llc | Large array of upward pointing p-i-n diodes having large and uniform current |
US7667999B2 (en) * | 2007-03-27 | 2010-02-23 | Sandisk 3D Llc | Method to program a memory cell comprising a carbon nanotube fabric and a steering element |
US7982209B2 (en) * | 2007-03-27 | 2011-07-19 | Sandisk 3D Llc | Memory cell comprising a carbon nanotube fabric element and a steering element |
US20080315206A1 (en) * | 2007-06-19 | 2008-12-25 | Herner S Brad | Highly Scalable Thin Film Transistor |
US7537968B2 (en) * | 2007-06-19 | 2009-05-26 | Sandisk 3D Llc | Junction diode with reduced reverse current |
US7718546B2 (en) * | 2007-06-27 | 2010-05-18 | Sandisk 3D Llc | Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |
US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7846785B2 (en) * | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7824956B2 (en) * | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US20090104756A1 (en) * | 2007-06-29 | 2009-04-23 | Tanmay Kumar | Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide |
US7902537B2 (en) * | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8349663B2 (en) * | 2007-09-28 | 2013-01-08 | Sandisk 3D Llc | Vertical diode based memory cells having a lowered programming voltage and methods of forming the same |
US20090086521A1 (en) * | 2007-09-28 | 2009-04-02 | Herner S Brad | Multiple antifuse memory cells and methods to form, program, and sense the same |
US20090166610A1 (en) * | 2007-12-31 | 2009-07-02 | April Schricker | Memory cell with planarized carbon nanotube layer and methods of forming the same |
US8558220B2 (en) * | 2007-12-31 | 2013-10-15 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
US8236623B2 (en) | 2007-12-31 | 2012-08-07 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
US8878235B2 (en) | 2007-12-31 | 2014-11-04 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
US7745312B2 (en) * | 2008-01-15 | 2010-06-29 | Sandisk 3D, Llc | Selective germanium deposition for pillar devices |
WO2009091786A1 (en) * | 2008-01-15 | 2009-07-23 | Sandisk 3D Llc | Pillar devices and methods of making thereof |
US7906392B2 (en) | 2008-01-15 | 2011-03-15 | Sandisk 3D Llc | Pillar devices and methods of making thereof |
US8530318B2 (en) * | 2008-04-11 | 2013-09-10 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same |
US7812335B2 (en) * | 2008-04-11 | 2010-10-12 | Sandisk 3D Llc | Sidewall structured switchable resistor cell |
US8304284B2 (en) * | 2008-04-11 | 2012-11-06 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same |
US8110476B2 (en) * | 2008-04-11 | 2012-02-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8048474B2 (en) * | 2008-04-11 | 2011-11-01 | Sandisk 3D Llc | Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing |
TW201001629A (en) * | 2008-04-11 | 2010-01-01 | Sandisk 3D Llc | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same |
US7723180B2 (en) * | 2008-04-11 | 2010-05-25 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US7830698B2 (en) * | 2008-04-11 | 2010-11-09 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US7859887B2 (en) * | 2008-04-11 | 2010-12-28 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US8133793B2 (en) * | 2008-05-16 | 2012-03-13 | Sandisk 3D Llc | Carbon nano-film reversible resistance-switchable elements and methods of forming the same |
US8154005B2 (en) | 2008-06-13 | 2012-04-10 | Sandisk 3D Llc | Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars |
US8471307B2 (en) * | 2008-06-13 | 2013-06-25 | Texas Instruments Incorporated | In-situ carbon doped e-SiGeCB stack for MOS transistor |
DE102008035816B4 (de) * | 2008-07-31 | 2011-08-25 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 | Leistungssteigerung in PMOS- und NMOS-Transistoren durch Verwendung eines eingebetteten verformten Halbleitermaterials |
US20100032639A1 (en) * | 2008-08-07 | 2010-02-11 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8431417B2 (en) * | 2008-08-19 | 2013-04-30 | Sandisk 3D Llc | Methods for increasing carbon nano-tube (CNT) yield in memory devices |
WO2010026865A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and semiconductor device |
JP5454945B2 (ja) * | 2008-09-05 | 2014-03-26 | 株式会社東芝 | 記憶装置 |
US7920407B2 (en) | 2008-10-06 | 2011-04-05 | Sandisk 3D, Llc | Set and reset detection circuits for reversible resistance switching memory material |
CN102265400A (zh) * | 2008-10-23 | 2011-11-30 | 桑迪士克3D有限责任公司 | 展示减少的分层的基于碳的存储器元件和形成其的方法 |
US8284601B2 (en) | 2009-04-01 | 2012-10-09 | Samsung Electronics Co., Ltd. | Semiconductor memory device comprising three-dimensional memory cell array |
KR101548674B1 (ko) * | 2009-08-26 | 2015-09-01 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
US8270199B2 (en) | 2009-04-03 | 2012-09-18 | Sandisk 3D Llc | Cross point non-volatile memory cell |
US8279650B2 (en) | 2009-04-20 | 2012-10-02 | Sandisk 3D Llc | Memory system with data line switching scheme |
US20100279493A1 (en) * | 2009-04-30 | 2010-11-04 | Kishore Kamath | Doping of semiconductor layer for improved efficiency of semiconductor structures |
US20100276785A1 (en) * | 2009-04-30 | 2010-11-04 | Kishore Kamath | Doping of semiconductor layer for improved efficiency of semiconductor structures |
US8154904B2 (en) | 2009-06-19 | 2012-04-10 | Sandisk 3D Llc | Programming reversible resistance switching elements |
US7927977B2 (en) * | 2009-07-15 | 2011-04-19 | Sandisk 3D Llc | Method of making damascene diodes using sacrificial material |
US8207064B2 (en) | 2009-09-17 | 2012-06-26 | Sandisk 3D Llc | 3D polysilicon diode with low contact resistance and method for forming same |
US8481396B2 (en) * | 2009-10-23 | 2013-07-09 | Sandisk 3D Llc | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
US8551855B2 (en) * | 2009-10-23 | 2013-10-08 | Sandisk 3D Llc | Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same |
WO2011056534A2 (en) | 2009-10-26 | 2011-05-12 | Sandisk 3D, Llc | Methods of forming pillars for memory cells using sequential sidewall patterning |
US8298887B2 (en) * | 2009-12-03 | 2012-10-30 | Applied Materials, Inc. | High mobility monolithic p-i-n diodes |
US8551850B2 (en) * | 2009-12-07 | 2013-10-08 | Sandisk 3D Llc | Methods of forming a reversible resistance-switching metal-insulator-metal structure |
US8213243B2 (en) | 2009-12-15 | 2012-07-03 | Sandisk 3D Llc | Program cycle skip |
US8223525B2 (en) | 2009-12-15 | 2012-07-17 | Sandisk 3D Llc | Page register outside array and sense amplifier interface |
US8431492B2 (en) | 2010-02-02 | 2013-04-30 | Sandisk 3D Llc | Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
US8389375B2 (en) * | 2010-02-11 | 2013-03-05 | Sandisk 3D Llc | Memory cell formed using a recess and methods for forming the same |
US8686419B2 (en) * | 2010-02-23 | 2014-04-01 | Sandisk 3D Llc | Structure and fabrication method for resistance-change memory cell in 3-D memory |
US8237146B2 (en) * | 2010-02-24 | 2012-08-07 | Sandisk 3D Llc | Memory cell with silicon-containing carbon switching layer and methods for forming the same |
US20110210306A1 (en) * | 2010-02-26 | 2011-09-01 | Yubao Li | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8481394B2 (en) * | 2010-03-04 | 2013-07-09 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
EP2548238B8 (en) * | 2010-03-16 | 2015-06-17 | SanDisk 3D, LLC | Method of forming bottom electrodes for use with metal oxide resistivity switching layers |
JP2011222929A (ja) * | 2010-03-23 | 2011-11-04 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
US8471360B2 (en) | 2010-04-14 | 2013-06-25 | Sandisk 3D Llc | Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same |
US8436447B2 (en) | 2010-04-23 | 2013-05-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
CN102024676A (zh) * | 2010-05-25 | 2011-04-20 | 福建钧石能源有限公司 | 单室反应器中制造半导体器件的方法 |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8737111B2 (en) | 2010-06-18 | 2014-05-27 | Sandisk 3D Llc | Memory cell with resistance-switching layers |
US8724369B2 (en) | 2010-06-18 | 2014-05-13 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
US8520425B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Resistive random access memory with low current operation |
CN101901763B (zh) * | 2010-06-28 | 2011-12-07 | 启东吉莱电子有限公司 | 可控硅生产工艺 |
US8168506B2 (en) | 2010-07-13 | 2012-05-01 | Crossbar, Inc. | On/off ratio for non-volatile memory device and method |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
JP2012033750A (ja) * | 2010-07-30 | 2012-02-16 | Toshiba Corp | 半導体装置及びその製造方法 |
US8841196B1 (en) | 2010-09-29 | 2014-09-23 | Crossbar, Inc. | Selective deposition of silver for non-volatile memory device fabrication |
US9401475B1 (en) | 2010-08-23 | 2016-07-26 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
JP5075959B2 (ja) * | 2010-09-14 | 2012-11-21 | 株式会社東芝 | 抵抗変化メモリ |
US8883589B2 (en) | 2010-09-28 | 2014-11-11 | Sandisk 3D Llc | Counter doping compensation methods to improve diode performance |
US8389971B2 (en) | 2010-10-14 | 2013-03-05 | Sandisk 3D Llc | Memory cells having storage elements that share material layers with steering elements and methods of forming the same |
US8841648B2 (en) | 2010-10-14 | 2014-09-23 | Sandisk 3D Llc | Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same |
US8187945B2 (en) | 2010-10-27 | 2012-05-29 | Crossbar, Inc. | Method for obtaining smooth, continuous silver film |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8258020B2 (en) | 2010-11-04 | 2012-09-04 | Crossbar Inc. | Interconnects for stacked non-volatile memory device and method |
US8462580B2 (en) | 2010-11-17 | 2013-06-11 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternatrie polarity |
US8355271B2 (en) | 2010-11-17 | 2013-01-15 | Sandisk 3D Llc | Memory system with reversible resistivity-switching using pulses of alternate polarity |
US8791010B1 (en) | 2010-12-31 | 2014-07-29 | Crossbar, Inc. | Silver interconnects for stacked non-volatile memory device and method |
US8866124B2 (en) | 2011-02-02 | 2014-10-21 | Sandisk 3D Llc | Diodes with native oxide regions for use in memory arrays and methods of forming the same |
US9053766B2 (en) | 2011-03-03 | 2015-06-09 | Sandisk 3D, Llc | Three dimensional memory system with intelligent select circuit |
US8374051B2 (en) | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
US8553476B2 (en) | 2011-03-03 | 2013-10-08 | Sandisk 3D Llc | Three dimensional memory system with page of data across word lines |
US8699293B2 (en) | 2011-04-27 | 2014-04-15 | Sandisk 3D Llc | Non-volatile storage system with dual block programming |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9252191B2 (en) * | 2011-07-22 | 2016-02-02 | Crossbar, Inc. | Seed layer for a p+ silicon germanium material for a non-volatile memory device and method |
US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
US8659001B2 (en) | 2011-09-01 | 2014-02-25 | Sandisk 3D Llc | Defect gradient to boost nonvolatile memory performance |
JP2013069933A (ja) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8637413B2 (en) | 2011-12-02 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile resistive memory element with a passivated switching layer |
US8698119B2 (en) | 2012-01-19 | 2014-04-15 | Sandisk 3D Llc | Nonvolatile memory device using a tunnel oxide as a current limiter element |
US8686386B2 (en) | 2012-02-17 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory device using a varistor as a current limiter element |
US8946667B1 (en) | 2012-04-13 | 2015-02-03 | Crossbar, Inc. | Barrier structure for a silver based RRAM and method |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8682809B2 (en) | 2012-04-18 | 2014-03-25 | Scorpcast, Llc | System and methods for providing user generated video reviews |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US8796658B1 (en) | 2012-05-07 | 2014-08-05 | Crossbar, Inc. | Filamentary based non-volatile resistive memory device and method |
US8765566B2 (en) | 2012-05-10 | 2014-07-01 | Crossbar, Inc. | Line and space architecture for a non-volatile memory device |
US9070859B1 (en) * | 2012-05-25 | 2015-06-30 | Crossbar, Inc. | Low temperature deposition method for polycrystalline silicon material for a non-volatile memory device |
US8883603B1 (en) | 2012-08-01 | 2014-11-11 | Crossbar, Inc. | Silver deposition method for a non-volatile memory device |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US9741765B1 (en) | 2012-08-14 | 2017-08-22 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
KR101932230B1 (ko) * | 2012-08-28 | 2018-12-26 | 에스케이하이닉스 주식회사 | 매립비트라인을 구비한 반도체 장치 및 그 제조방법 |
US8796102B1 (en) | 2012-08-29 | 2014-08-05 | Crossbar, Inc. | Device structure for a RRAM and method |
US9312483B2 (en) | 2012-09-24 | 2016-04-12 | Crossbar, Inc. | Electrode structure for a non-volatile memory device and method |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US9406379B2 (en) | 2013-01-03 | 2016-08-02 | Crossbar, Inc. | Resistive random access memory with non-linear current-voltage relationship |
US20140241031A1 (en) | 2013-02-28 | 2014-08-28 | Sandisk 3D Llc | Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same |
US9093635B2 (en) | 2013-03-14 | 2015-07-28 | Crossbar, Inc. | Controlling on-state current for two-terminal memory |
US8947944B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Program cycle skip evaluation before write operations in non-volatile memory |
US8947972B2 (en) | 2013-03-15 | 2015-02-03 | Sandisk 3D Llc | Dynamic address grouping for parallel programming in non-volatile memory |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
CN104022219A (zh) * | 2014-06-26 | 2014-09-03 | 中山大学 | 基于Al2O3薄膜的擦写一次读多次非挥发性存储器 |
US9985101B2 (en) * | 2015-10-30 | 2018-05-29 | Varian Semiconductor Equipment Associates, Inc. | Encapsulated nanostructures and method for fabricating |
KR102494683B1 (ko) | 2016-03-02 | 2023-02-02 | 에스케이하이닉스 주식회사 | 스위칭 소자, 스위칭 소자 어레이, 저항 변화 메모리 장치, 및 이들의 제조 방법 |
US9806256B1 (en) | 2016-10-21 | 2017-10-31 | Sandisk Technologies Llc | Resistive memory device having sidewall spacer electrode and method of making thereof |
FR3089348B1 (fr) * | 2018-11-30 | 2020-10-30 | Commissariat Energie Atomique | procede de fabrication d’une matrice de diodes a base de germanium et a faible courant d’obscurité |
US11302714B2 (en) | 2020-08-05 | 2022-04-12 | Sandisk Technologies Llc | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same |
US11552100B2 (en) | 2020-08-05 | 2023-01-10 | Sandisk Technologies Llc | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same |
US11600634B2 (en) | 2020-08-05 | 2023-03-07 | Sandisk Technologies Llc | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same |
WO2022031357A1 (en) * | 2020-08-05 | 2022-02-10 | Sandisk Technologies Llc | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same |
US20230055422A1 (en) * | 2021-08-23 | 2023-02-23 | Micron Technology, Inc. | Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4319211B4 (de) | 1993-06-09 | 2004-04-15 | Daimlerchrysler Ag | Tunnel-BARITT-Diode |
US5437209A (en) | 1993-09-30 | 1995-08-01 | The Torrington Company | Rocker arm assembly |
TW227629B (en) | 1993-10-30 | 1994-08-01 | Nat Science Committee | Photo receiver with high sensitivity and high current |
JPH08125200A (ja) * | 1994-10-25 | 1996-05-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US6162711A (en) * | 1999-01-15 | 2000-12-19 | Lucent Technologies, Inc. | In-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturing |
US6879014B2 (en) * | 2000-03-20 | 2005-04-12 | Aegis Semiconductor, Inc. | Semitransparent optical detector including a polycrystalline layer and method of making |
US6426547B1 (en) | 2000-12-12 | 2002-07-30 | Information Business Machines Corporation | Lateral polysilicon pin diode and method for so fabricating |
TW512524B (en) | 2001-01-19 | 2002-12-01 | Nat Science Council | Fabrication of amorphous silicon/amorphous silicon gemine NI1PI2N infrared position defectors |
US7038248B2 (en) * | 2002-02-15 | 2006-05-02 | Sandisk Corporation | Diverse band gap energy level semiconductor device |
JP3970729B2 (ja) | 2002-09-20 | 2007-09-05 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US8637366B2 (en) * | 2002-12-19 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states |
US6946719B2 (en) | 2003-12-03 | 2005-09-20 | Matrix Semiconductor, Inc | Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide |
US7265049B2 (en) * | 2002-12-19 | 2007-09-04 | Sandisk 3D Llc | Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices |
US7176064B2 (en) * | 2003-12-03 | 2007-02-13 | Sandisk 3D Llc | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide |
US20050226067A1 (en) | 2002-12-19 | 2005-10-13 | Matrix Semiconductor, Inc. | Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material |
US7285464B2 (en) | 2002-12-19 | 2007-10-23 | Sandisk 3D Llc | Nonvolatile memory cell comprising a reduced height vertical diode |
JP2006511965A (ja) | 2002-12-19 | 2006-04-06 | マトリックス セミコンダクター インコーポレイテッド | 高密度不揮発性メモリを製作するための改良された方法 |
CN1759450B (zh) * | 2003-03-18 | 2012-02-29 | 株式会社东芝 | 可编程阻抗存储器器件 |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
US7172840B2 (en) | 2003-12-05 | 2007-02-06 | Sandisk Corporation | Photomask features with interior nonprinting window using alternating phase shifting |
US6951780B1 (en) * | 2003-12-18 | 2005-10-04 | Matrix Semiconductor, Inc. | Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays |
US20050221200A1 (en) | 2004-04-01 | 2005-10-06 | Matrix Semiconductor, Inc. | Photomask features with chromeless nonprinting phase shifting window |
US20060067117A1 (en) * | 2004-09-29 | 2006-03-30 | Matrix Semiconductor, Inc. | Fuse memory cell comprising a diode, the diode serving as the fuse element |
US7224013B2 (en) | 2004-09-29 | 2007-05-29 | Sandisk 3D Llc | Junction diode comprising varying semiconductor compositions |
US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
US20060250836A1 (en) * | 2005-05-09 | 2006-11-09 | Matrix Semiconductor, Inc. | Rewriteable memory cell comprising a diode and a resistance-switching material |
US7678420B2 (en) | 2005-06-22 | 2010-03-16 | Sandisk 3D Llc | Method of depositing germanium films |
US20070102724A1 (en) * | 2005-11-10 | 2007-05-10 | Matrix Semiconductor, Inc. | Vertical diode doped with antimony to avoid or limit dopant diffusion |
US7816659B2 (en) | 2005-11-23 | 2010-10-19 | Sandisk 3D Llc | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal |
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US7648896B2 (en) | 2010-01-19 |
US20100163831A1 (en) | 2010-07-01 |
TWI331769B (en) | 2010-10-11 |
CN101336478A (zh) | 2008-12-31 |
US8314477B2 (en) | 2012-11-20 |
US20130313505A1 (en) | 2013-11-28 |
CN101336478B (zh) | 2011-02-16 |
KR20080091135A (ko) | 2008-10-09 |
EP1961044A1 (en) | 2008-08-27 |
US20090026582A1 (en) | 2009-01-29 |
WO2007067448A1 (en) | 2007-06-14 |
US7405465B2 (en) | 2008-07-29 |
US20120012808A1 (en) | 2012-01-19 |
JP2009518861A (ja) | 2009-05-07 |
US20060087005A1 (en) | 2006-04-27 |
US8766414B2 (en) | 2014-07-01 |
TW200739683A (en) | 2007-10-16 |
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