JP5041984B2 - 整流回路、電源回路及び半導体装置 - Google Patents

整流回路、電源回路及び半導体装置 Download PDF

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Publication number
JP5041984B2
JP5041984B2 JP2007302727A JP2007302727A JP5041984B2 JP 5041984 B2 JP5041984 B2 JP 5041984B2 JP 2007302727 A JP2007302727 A JP 2007302727A JP 2007302727 A JP2007302727 A JP 2007302727A JP 5041984 B2 JP5041984 B2 JP 5041984B2
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transistor
capacitor
diode
film
voltage
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JP2008161044A (ja
JP2008161044A5 (https=
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豊 塩野入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors

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  • Rectifiers (AREA)
JP2007302727A 2006-11-29 2007-11-22 整流回路、電源回路及び半導体装置 Expired - Fee Related JP5041984B2 (ja)

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JP2006321034 2006-11-29
JP2006321034 2006-11-29
JP2007302727A JP5041984B2 (ja) 2006-11-29 2007-11-22 整流回路、電源回路及び半導体装置

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JP2008161044A JP2008161044A (ja) 2008-07-10
JP2008161044A5 JP2008161044A5 (https=) 2010-12-24
JP5041984B2 true JP5041984B2 (ja) 2012-10-03

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US (2) US7889528B2 (https=)
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Cited By (1)

* Cited by examiner, † Cited by third party
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