JP5041870B2 - 薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法。 - Google Patents

薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法。 Download PDF

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JP5041870B2
JP5041870B2 JP2007123413A JP2007123413A JP5041870B2 JP 5041870 B2 JP5041870 B2 JP 5041870B2 JP 2007123413 A JP2007123413 A JP 2007123413A JP 2007123413 A JP2007123413 A JP 2007123413A JP 5041870 B2 JP5041870 B2 JP 5041870B2
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etching
alnd
film
liquid crystal
crystal display
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JP2007305996A (ja
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イ，キボム
チョ，サムヨン
キム，ナムソ
クー，ビュンス
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Dongjin Semichem Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007123413A 2006-05-10 2007-05-08 薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法。 Expired - Fee Related JP5041870B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0041943 2006-05-10
KR1020060041943A KR101299131B1 (ko) 2006-05-10 2006-05-10 박막트랜지스터 액정표시장치의 식각 조성물

Publications (2)

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JP2007305996A JP2007305996A (ja) 2007-11-22
JP5041870B2 true JP5041870B2 (ja) 2012-10-03

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JP2007123413A Expired - Fee Related JP5041870B2 (ja) 2006-05-10 2007-05-08 薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法。

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JP (1) JP5041870B2 (zh)
KR (1) KR101299131B1 (zh)
CN (2) CN103184453A (zh)
TW (1) TWI460309B (zh)

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KR101393599B1 (ko) * 2007-09-18 2014-05-12 주식회사 동진쎄미켐 Ｔｆｔ-ｌｃｄ용 금속 배선 형성을 위한 식각액 조성물
KR20090059961A (ko) * 2007-12-07 2009-06-11 주식회사 동진쎄미켐 박막트랜지스터-액정표시장치용 금속 배선 형성을 위한식각액 조성물
KR20090109198A (ko) * 2008-04-15 2009-10-20 주식회사 동진쎄미켐 액정디스플레이 장치용 유리기판의 세정 및 식각 조성물 및이를 이용한 유리기판의 식각 방법
KR101520921B1 (ko) * 2008-11-07 2015-05-18 삼성디스플레이 주식회사 식각액 조성물, 이를 사용한 금속 패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법
KR101531688B1 (ko) * 2008-11-12 2015-06-26 솔브레인 주식회사 투명도전막 식각용액
KR101804572B1 (ko) * 2009-11-03 2017-12-05 동우 화인켐 주식회사 식각액 조성물
KR101717933B1 (ko) * 2010-04-14 2017-03-21 삼성디스플레이 주식회사 표시기판 및 그 제조방법
KR101953215B1 (ko) * 2012-10-05 2019-03-04 삼성디스플레이 주식회사 식각 조성물, 금속 배선 및 표시 기판의 제조방법
WO2014171054A1 (ja) * 2013-04-19 2014-10-23 パナソニック株式会社 酸化アルミニウム膜用のエッチング液と、当該エッチング液を用いた薄膜半導体装置の製造方法
JP6261926B2 (ja) * 2013-09-18 2018-01-17 関東化學株式会社 金属酸化物エッチング液組成物およびエッチング方法
KR20160108944A (ko) * 2015-03-09 2016-09-21 동우 화인켐 주식회사 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
KR102384596B1 (ko) * 2018-01-08 2022-04-08 동우 화인켐 주식회사 Mo-Nb 합금 박막 식각액 조성물 및 이를 이용한 표시장치의 제조방법
KR102368026B1 (ko) * 2018-02-06 2022-02-24 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN111286334A (zh) * 2020-03-19 2020-06-16 厦门思美科新材料有限公司 一种用于ITO/Ag/ITO薄膜一步刻蚀的蚀刻液
US20220049160A1 (en) * 2020-08-13 2022-02-17 Entegris, Inc. Nitride etchant composition and method
CN113529084A (zh) * 2021-06-09 2021-10-22 昆山晶科微电子材料有限公司 一种用于TFT-array基片的蚀刻液
KR20230078912A (ko) * 2021-11-26 2023-06-05 삼성디스플레이 주식회사 인듐산화막 또는 은 함유 금속막 식각액 조성물 및 상기 식각액 조성물의 제조 방법

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JP4864434B2 (ja) * 2005-11-29 2012-02-01 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ液晶表示装置用エッチング組成物

Also Published As

Publication number Publication date
JP2007305996A (ja) 2007-11-22
CN101070596A (zh) 2007-11-14
CN103184453A (zh) 2013-07-03
KR101299131B1 (ko) 2013-08-22
TWI460309B (zh) 2014-11-11
TW200804624A (en) 2008-01-16
KR20070109238A (ko) 2007-11-15

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