JP4926162B2 - 薄膜トランジスタ液晶表示装置用金属配線形成のためのエッチング液組成物 - Google Patents
薄膜トランジスタ液晶表示装置用金属配線形成のためのエッチング液組成物 Download PDFInfo
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- JP4926162B2 JP4926162B2 JP2008311405A JP2008311405A JP4926162B2 JP 4926162 B2 JP4926162 B2 JP 4926162B2 JP 2008311405 A JP2008311405 A JP 2008311405A JP 2008311405 A JP2008311405 A JP 2008311405A JP 4926162 B2 JP4926162 B2 JP 4926162B2
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明のエッチング液組成物は、全体エッチング液組成物重量に対して、リン酸45〜70重量%、硝酸1.5〜6重量%、酢酸10〜30重量%、スルホン酸化合物0.1〜1.999重量%、Moエッチング調整剤0.01〜3重量%及び組成物総重量を100重量%にする量の水を含み、前記Moエッチング調整剤は、MH 2 PO 4 、M 2 HPO 4 、M 3 PO 4 、MHSO 4 、M 2 SO 4 、CH 3 COOM、MHCO 3 、M 2 CO 3 、MNO 3 及びM 2 C 2 O 4 (MがNH 4 、NaまたはK)の塩化合物からなる群から選択された一つ以上の物質であり、前記スルホン酸化合物は、硫酸(H 2 SO 4 )、硫酸アンモニウム((NH 4 ) 2 SO 4 )、硫酸ナトリウム(Na 2 SO 4 )、硫酸カルシウム(CaSO 4 )、メタンスルホン酸(CH 3 SO 3 H)及び硫酸アルミニウム(Al 2 (SO 4 ) 3 )から構成された群から選択された一つ以上の物質であることを特徴とする。
下記表1に示された組成によってエッチング液組成物を製造した。Moエッチング調整剤としては、硝酸アンモニウム(NH4NO3)を使用し、スルホン酸化合物としては、メタンスルホン酸(CH3SO3H)を使用した。
Claims (4)
- Mo単一膜、Mo/AlNd二重膜またはMo/Al/Mo三重膜のエッチングのためのエッチング液組成物であって、
前記エッチング液組成物は、前記エッチング液組成物全体の重量に対して、リン酸45〜70重量%、硝酸1.5〜6重量%、酢酸10〜30重量%、Moエッチング調整剤0.01〜3重量%、スルホン酸化合物0.1〜1.999重量%及び組成物総重量を100重量%にする量の水を含み、
前記Moエッチング調整剤は、MH 2 PO 4 、M 2 HPO 4 、M 3 PO 4 、MHSO 4 、M 2 SO 4 、CH 3 COOM、MHCO 3 、M 2 CO 3 、MNO 3 及びM 2 C 2 O 4 (MがNH 4 、NaまたはK)の塩化合物からなる群から選択された一つ以上の物質であり、
前記スルホン酸化合物は、硫酸(H 2 SO 4 )、硫酸アンモニウム((NH 4 ) 2 SO 4 )、硫酸ナトリウム(Na 2 SO 4 )、硫酸カルシウム(CaSO 4 )、メタンスルホン酸(CH 3 SO 3 H)及び硫酸アルミニウム(Al 2 (SO 4 ) 3 )から構成された群から選択された一つ以上の物質であることを特徴とするエッチング液組成物。 - 前記Moエッチング調整剤は、KNO 3 、CH 3 COOK、NH 4 NO 3 、CH 3 COONH 4 、KH 2 PO 4 、(NH 4 )H 2 PO 4 及びKHSO 4 からなる群から選択された一つ以上の物質であることを特徴とする請求項1に記載のエッチング液組成物。
- 前記Moエッチング調整剤は、KNO 3 またはCH 3 COONH 4 であることを特徴とする請求項2に記載のエッチング液組成物。
- 前記スルホン酸化合物は、メタンスルホン酸(CH 3 SO 3 H)または硫酸(H 2 SO 4 )であることを特徴とする請求項1に記載のエッチング液組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070127071A KR20090059961A (ko) | 2007-12-07 | 2007-12-07 | 박막트랜지스터-액정표시장치용 금속 배선 형성을 위한식각액 조성물 |
KR10-2007-0127071 | 2007-12-07 |
Publications (2)
Publication Number | Publication Date |
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JP2009206488A JP2009206488A (ja) | 2009-09-10 |
JP4926162B2 true JP4926162B2 (ja) | 2012-05-09 |
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JP2008311405A Expired - Fee Related JP4926162B2 (ja) | 2007-12-07 | 2008-12-05 | 薄膜トランジスタ液晶表示装置用金属配線形成のためのエッチング液組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4926162B2 (ja) |
KR (1) | KR20090059961A (ja) |
CN (1) | CN101451241B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101608985A (zh) * | 2009-07-27 | 2009-12-23 | 上海市机械制造工艺研究所有限公司 | 镀层显示浸蚀剂及多层镀镀层组织结构的一次显示方法 |
CN102373473A (zh) * | 2010-08-06 | 2012-03-14 | 东友Fine-Chem股份有限公司 | 一种用于坡面型刻蚀装置的刻蚀组合物及其使用方法 |
KR101766488B1 (ko) * | 2011-12-15 | 2017-08-09 | 동우 화인켐 주식회사 | 금속 배선 형성을 위한 식각액 조성물 |
KR20140013310A (ko) | 2012-07-23 | 2014-02-05 | 삼성디스플레이 주식회사 | 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 표시판 제조 방법 |
CN102787316A (zh) * | 2012-08-30 | 2012-11-21 | 长沙牧泰莱电路技术有限公司 | 一种pcb电镀微蚀药液及其配制方法 |
KR101953215B1 (ko) * | 2012-10-05 | 2019-03-04 | 삼성디스플레이 주식회사 | 식각 조성물, 금속 배선 및 표시 기판의 제조방법 |
KR102190370B1 (ko) | 2014-01-10 | 2020-12-11 | 삼성전자주식회사 | 도전 패턴의 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
KR102091541B1 (ko) * | 2014-02-25 | 2020-03-20 | 동우 화인켐 주식회사 | 유기 발광 표시 장치의 제조 방법 |
KR102400311B1 (ko) * | 2015-08-31 | 2022-05-20 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 표시 기판 |
KR102368376B1 (ko) * | 2015-09-22 | 2022-02-28 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 |
JP2017139295A (ja) | 2016-02-02 | 2017-08-10 | 東芝メモリ株式会社 | 基板処理装置、基板処理方法、および基板処理液 |
KR101842083B1 (ko) * | 2016-08-08 | 2018-03-29 | (주)에스이피 | 돌기 형성 방법 |
CN109594079B (zh) * | 2017-09-30 | 2021-02-12 | 深圳新宙邦科技股份有限公司 | 一种钼铝共用蚀刻液及蚀刻方法 |
KR102503788B1 (ko) * | 2017-11-21 | 2023-02-27 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법 |
KR102384596B1 (ko) * | 2018-01-08 | 2022-04-08 | 동우 화인켐 주식회사 | Mo-Nb 합금 박막 식각액 조성물 및 이를 이용한 표시장치의 제조방법 |
KR102092914B1 (ko) * | 2019-06-03 | 2020-03-24 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법 |
CN113529084A (zh) * | 2021-06-09 | 2021-10-22 | 昆山晶科微电子材料有限公司 | 一种用于TFT-array基片的蚀刻液 |
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KR101171175B1 (ko) * | 2004-11-03 | 2012-08-06 | 삼성전자주식회사 | 도전체용 식각액 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 |
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JP2009206488A (ja) | 2009-09-10 |
KR20090059961A (ko) | 2009-06-11 |
CN101451241B (zh) | 2011-09-14 |
CN101451241A (zh) | 2009-06-10 |
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