JP5041870B2 - Etching composition for thin film transistor liquid crystal display device and method for producing thin film transistor liquid crystal display device. - Google Patents

Etching composition for thin film transistor liquid crystal display device and method for producing thin film transistor liquid crystal display device. Download PDF

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JP5041870B2
JP5041870B2 JP2007123413A JP2007123413A JP5041870B2 JP 5041870 B2 JP5041870 B2 JP 5041870B2 JP 2007123413 A JP2007123413 A JP 2007123413A JP 2007123413 A JP2007123413 A JP 2007123413A JP 5041870 B2 JP5041870 B2 JP 5041870B2
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JP2007305996A (en
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イ，キボム
チョ，サムヨン
キム，ナムソ
クー，ビュンス
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C11D2111/22—

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Description

本発明は薄膜トランジスタ液晶表示装置のエッチング組成物及び薄膜トランジスタ液晶表示装置の製造方法に関する。   The present invention relates to an etching composition for a thin film transistor liquid crystal display device and a method for manufacturing the thin film transistor liquid crystal display device.

エッチング工程は窮極的に基板上に微細回路を形成する過程であって、現像工程によって形成されたフォトレジストパターンと同一の金属パターンを形成する。
エッチング工程はその方式によって大きく湿式エッチングと乾式エッチングに区分され、湿式エッチングは金属などと反応して腐蝕させる酸系の化学薬品を用いてフォトレジストパターンのない部分を溶かして出すことであり、乾式エッチングはイオンを加速させて露出部位の金属を除去することによってパターンを形成することである。 The etching process is a process of extremely forming a fine circuit on the substrate, and forms the same metal pattern as the photoresist pattern formed by the development process.
The etching process is roughly divided into wet etching and dry etching depending on the method, and wet etching is to dissolve and remove the part without the photoresist pattern using acid-based chemicals that react with metals and corrode. Etching is the formation of a pattern by accelerating ions to remove the metal at the exposed sites.

前記乾式エッチングは湿式エッチングに比べて、異方性プロファイルを有しエッチング制御力が優れるという長所がある。しかし、装備が高価であり、大面積化の困難があり、エッチング速度が遅いため生産性が低下するという問題点がある。   The dry etching has an advantage that it has an anisotropic profile and has excellent etching control power compared to the wet etching. However, there are problems that the equipment is expensive, it is difficult to increase the area, and the productivity is lowered because the etching rate is slow.

反面、前記湿式エッチングは乾式エッチングに比べて、大量および大型処理が可能であり、エッチング速度が速いので、生産性が高く、装備が安価であるという長所がある。しかし、前記湿式エッチングはエッチング液および純水の使用量が多く、廃液量が多いという問題点がある。   On the other hand, the wet etching is advantageous in that it can be processed in a large amount and a large size, and the etching rate is fast, so that the productivity is high and the equipment is inexpensive. However, the wet etching has a problem in that the amount of etching solution and pure water used is large and the amount of waste liquid is large.

一般に、乾式エッチングを行う場合、表面の部分硬化されたフォトレジストを除去するためにプラズマアッシング工程が追加されることがある。従って、装備のコスト、工程時間損失などの生産性低下および製品競争力弱化をもたらすことがあり、実際現場では湿式エッチングが主に使用されているのが実情である。   In general, when performing dry etching, a plasma ashing process may be added to remove partially cured photoresist on the surface. Therefore, there is a possibility that the productivity decreases such as equipment cost and process time loss, and the product competitiveness is weakened. In practice, wet etching is mainly used in the field.

また、湿式エッチングに使用されるエッチング液はより精密な微細回路が要求されるため、エッチングしようとする金属の種類に特定されるように適用されている。
一例に、Ａｌ単一膜をエッチングするエッチング液として下記の特許文献１および特許文献２に燐酸、硝酸、酢酸、界面活性剤および水で構成されるエッチング液が開示されている。 Further, since an etching solution used for wet etching requires a more precise fine circuit, it is applied so as to be specified for the type of metal to be etched.
As an example, Patent Literature 1 and Patent Literature 2 below disclose an etching solution composed of phosphoric acid, nitric acid, acetic acid, a surfactant, and water as an etching solution for etching an Al single film.

また、下記の特許文献３はＡｌＮｄ膜をエッチングするために燐酸、硝酸、酢酸、水、およびフルオロカーボン系界面活性剤を含むエッチング液について開示している。下記の特許文献４はアルミニウムおよびＩＴＯをエッチングするためにシュウ酸および組成物のｐＨを３〜４．５に調節できる酸と塩酸、燐酸、および硝酸を含むエッチング液組成物について開示されている。また、下記の特許文献５には銀または銀合金をエッチングするために燐酸、硝酸、酢酸、およびポタシウムオキシサルフェートを含む配線用エッチング液について開示している。さらに、下記の特許文献６はＩＺＯをエッチングするために塩酸、酢酸、阻害剤、および水を含むエッチング液組成物について開示している。   Patent Document 3 below discloses an etchant containing phosphoric acid, nitric acid, acetic acid, water, and a fluorocarbon surfactant for etching an AlNd film. The following Patent Document 4 discloses an etching solution composition containing acid, hydrochloric acid, phosphoric acid, and nitric acid that can adjust the pH of oxalic acid and the composition to 3 to 4.5 in order to etch aluminum and ITO. Patent Document 5 below discloses a wiring etching solution containing phosphoric acid, nitric acid, acetic acid, and potassium oxysulfate for etching silver or a silver alloy. Furthermore, the following patent document 6 discloses an etching solution composition containing hydrochloric acid, acetic acid, an inhibitor, and water for etching IZO.

下記の特許文献７にはソースおよびドレイン電極用ＭｏまたはＭｏＷ（モリブデンとタングステンの合金）をエッチングするために燐酸、硝酸、酢酸、酸化調整剤、および水を含むエッチング液組成物について開示されている。   Patent Document 7 below discloses an etchant composition containing phosphoric acid, nitric acid, acetic acid, an oxidation regulator, and water for etching Mo or MoW (molybdenum and tungsten alloy) for source and drain electrodes. .

しかし、前記のような従来のエッチング液は、一つの金属膜のみをエッチングするための用途に適用されるため、装備と工程の効率性側面でその効果が低下するので、同時に複数の金属膜をエッチングするための組成物について持続的に研究されている。   However, since the conventional etching solution as described above is applied to an application for etching only one metal film, the effect is reduced in terms of equipment and process efficiency. There is a continual study of compositions for etching.

これに関する一例に、下記の特許文献８および特許文献９はＭｏ／ＡｌまたはＭｏ／ＡｌＮｄ、ＭｏＷ／ＡｌＮｄの二重膜をエッチングするために燐酸、硝酸、酢酸、および酸化調整剤を含むエッチング液について開示されている。また、下記の特許文献１０はＭｏ／Ａｌ（ＡｌＮｄ）／Ｍｏ膜をエッチングするために燐酸、硝酸、酢酸、および酸化調整剤を含むエッチング液について開示されている。   As an example of this, Patent Document 8 and Patent Document 9 below describe an etching solution containing phosphoric acid, nitric acid, acetic acid, and an oxidation regulator to etch a Mo / Al or Mo / AlNd, MoW / AlNd double film. It is disclosed. Patent Document 10 below discloses an etching solution containing phosphoric acid, nitric acid, acetic acid, and an oxidation regulator for etching a Mo / Al (AlNd) / Mo film.

また、下記の特許文献１１、特許文献１２、特許文献１３はＭｏ／ＡｌＮｄ、ＭｏＷ／ＡｌＮｄ、Ｍｏ／ＡｌＮｄ／Ｍｏ、ＭｏＷ／ＡｌＮｄ／ＭｏＷ、Ｍｏ単一膜、およびＭｏＷ単一膜に全て適用可能なエッチング液として燐酸、硝酸、酢酸、モリブデンエッチング抑制剤（アンモニウム塩、カリウム塩）、および水を含むエッチング液について開示している。   The following Patent Document 11, Patent Document 12, and Patent Document 13 are all applicable to Mo / AlNd, MoW / AlNd, Mo / AlNd / Mo, MoW / AlNd / MoW, Mo single film, and MoW single film. An etching solution containing phosphoric acid, nitric acid, acetic acid, a molybdenum etching inhibitor (ammonium salt, potassium salt), and water as an etching solution is disclosed.

しかし、前記のような従来のエッチング組成物で薄膜トランジスタ液晶表示装置を構成するソース／ドレイン電極用金属膜のＭｏ膜をエッチングする場合には、プロファイルが図８のようにテーパ不良を起こし、後続工程で積層される上部膜のステップカバレッジに不良を発生させることがあるという問題点がある。   However, when the Mo film of the metal film for the source / drain electrodes constituting the thin film transistor liquid crystal display device is etched with the conventional etching composition as described above, the profile causes a taper defect as shown in FIG. There is a problem in that a defect may occur in the step coverage of the upper film laminated.

さらに、前記の従来のエッチング組成物で薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート電極用金属膜のＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜をエッチングする場合には、図９のように上部Ｍｏ膜の突出現象と下部ＡｌＮｄまたはＭｏ膜のアンダーカット現象が発生するという問題点がある。したがって、前記上部膜の突出現象を防止するために追加の工程を実施して除去しなければならず、下部膜のアンダーカット現象を防止するために傾斜面で上部膜の断線または上下部金属が短絡するという問題点がある。   Further, when the Mo / AlNd double film and the Mo / AlNd / Mo triple film of the metal film for the gate electrode constituting the TFT of the thin film transistor liquid crystal display device are etched with the conventional etching composition, as shown in FIG. In addition, there is a problem that the protrusion phenomenon of the upper Mo film and the undercut phenomenon of the lower AlNd or Mo film occur. Accordingly, in order to prevent the protrusion phenomenon of the upper film, an additional process must be performed and removed. There is a problem of short circuit.

このようなことから、従来の薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲートおよびソース／ドレイン電極用金属膜を多重層構造とする場合には、湿式工程と乾式工程を共に適用することによって、好ましいプロファイルを得ることが一般的であった。   For this reason, when the gate and source / drain electrode metal films constituting the TFT of the conventional thin film transistor liquid crystal display device have a multi-layer structure, a preferred profile is obtained by applying both a wet process and a dry process. It was common to get.

しかし、このような湿式エッチングと乾式エッチングを共に使用することは工程の面倒さによる生産性低下および費用の増加側面で不利であるという問題点がある。
大韓民国特許出願第１０−２００２−００４７９３３号 米国特許第４，８９５，６１７号 大韓民国特許出願第１０−２０００−００４７９３３号 大韓民国特許出願第１０−２００１−００３０１９２号 大韓民国特許出願第１０−２００１−００６５３２７号 大韓民国特許出願第１０−２００２−００１０２８４号 大韓民国特許出願第１０−２００１−００１８３５４号 大韓民国特許出願第１０−２０００−０００２８８６号 大韓民国特許出願第１０−２００１−００７２７５８号 大韓民国特許出願第１０−２０００−００１３８６７号 大韓民国特許出願第１０−２００２−００１７０９３号 大韓民国特許出願第１０−２００３−００８０５５７号 大韓民国特許出願第１０−２００４−００１０４０４号 However, the use of both wet etching and dry etching is disadvantageous in terms of productivity reduction and cost increase due to troublesome processes.
Korean Patent Application No. 10-2002-0047933 US Pat. No. 4,895,617 Korean Patent Application No. 10-2000-0047933 Korean Patent Application No. 10-2001-0030192 Korean Patent Application No. 10-2001-0065327 Korean Patent Application No. 10-2002-0010284 Korean Patent Application No. 10-2001-0018354 Korean Patent Application No. 10-2000-0002886 Korean Patent Application No. 10-2001-0072758 Korean Patent Application No. 10-2000-0013867 Korean Patent Application No. 10-2002-0017093 Korean Patent Application No. 10-2003-0080557 Korean Patent Application No. 10-2004-0010404

このような従来の技術の問題点を解決するために、本発明は同一の組成物を使用して薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料のＭｏ／ＡｌＮｄ二重膜またはＭｏ／ＡｌＮｄ／Ｍｏ三重膜を単一工程で下部膜のＡｌＮｄまたはＭｏのアンダーカット現象がなく湿式エッチングして優れたテーパを収得することができ、同時にソース／ドレイン配線材料のＭｏ単一膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜でも優れたプロファイルを形成することができる薄膜トランジスタ液晶表示装置のエッチング組成物を提供することを目的とする。   In order to solve such a problem of the conventional technique, the present invention uses a Mo / AlNd double film or a Mo / AlNd / film of a gate wiring material constituting a TFT of a thin film transistor liquid crystal display device using the same composition. The Mo trilayer can be wet etched in a single step without the undercut phenomenon of AlNd or Mo in the lower layer to obtain an excellent taper. At the same time, the Mo single layer of the source / drain wiring material and the Mo / AlNd / An object of the present invention is to provide an etching composition for a thin film transistor liquid crystal display device capable of forming an excellent profile even with a Mo triple film.

本発明の他の目的は、同一のエッチング組成物を使用して薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料のＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜とソース／ドレイン配線材料のＭｏ単一膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用して優れたエッチング効果を奏することによって装備の効率性増大および原価節減の可能な薄膜トランジスタ液晶表示装置のエッチング組成物を提供することにある。   Another object of the present invention is to provide Mo / AlNd double film, Mo / AlNd / Mo triple film and source / drain wiring material of the gate wiring material constituting the TFT of the thin film transistor liquid crystal display device using the same etching composition. It is an object to provide an etching composition of a thin film transistor liquid crystal display device capable of increasing the efficiency of equipment and reducing cost by exerting an excellent etching effect when applied to a Mo single film and a Mo / AlNd / Mo triple film. .

本発明の他の目的は、湿式エッチング後に追加の乾式エッチングを実施しなくても湿式エッチングのみでゲート配線材料のＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜とソース／ドレイン配線材料のＭｏ単一膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用して優れたエッチング効果を奏することによって工程を単純化することができ、原価節減および生産性向上に効果的な薄膜トランジスタ液晶表示装置のエッチング組成物を提供することにある。   Another object of the present invention is to form the gate wiring material Mo / AlNd double film and the Mo / AlNd / Mo triple film and the source / drain wiring material only by wet etching without additional dry etching after wet etching. Etching composition of thin film transistor liquid crystal display device which can simplify the process by applying it to Mo single film and Mo / AlNd / Mo triple film, and has an excellent etching effect, and is effective for cost reduction and productivity improvement To provide things.

前記目的を達成するために、本発明は、
薄膜トランジスタ液晶表示装置のＭｏ／ＡｌＮｄ／Ｍｏ三層膜のエッチング組成物であって、
ａ）燐酸５０〜８０重量％；
ｂ）硝酸２〜１５重量％；
ｃ）酢酸３〜２０重量％；
ｄ）リチウム化合物０．０５〜３重量％；
ｅ）燐酸塩化合物０．１〜５重量％；および
ｆ）残量の水
を含むことを特徴とする薄膜トランジスタ液晶表示装置のエッチング組成物を提供する。

In order to achieve the above object, the present invention provides:
A etching composition of Mo / AlNd / Mo three-layered film of a thin film transistor liquid crystal display device,
a) 50-80% by weight phosphoric acid;
b) 2-15% by weight of nitric acid;
c) 3-20% by weight acetic acid;
d) lithium of compound 0.05-3% by weight;
to provide an etching composition of the thin film transistor liquid crystal display device which comprises water and f) the remaining amount; e) phosphoric acid chloride compound 0.1-5 wt%.

また、本発明は、前記エッチング組成物を利用してエッチングする工程を含むことを特徴とする薄膜トランジスタ液晶表示装置の製造方法を提供する。   In addition, the present invention provides a method of manufacturing a thin film transistor liquid crystal display device comprising a step of etching using the etching composition.

本発明によれば、湿式エッチングした後、追加の乾式エッチングを実施しなくても同一の組成物を用いて湿式工程のみで薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料のＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜を下部膜のＡｌＮｄまたはＭｏのアンダーカット現象がなく、優れたテーパを得ることによって後続工程時に傾斜面で断線される不良を防止することができ、同時にソース／ドレイン配線材料のＭｏ単一膜でも逆テーパ現象を防止して、上／下層が短絡される不良を防止することができ、角度が４０〜８０°の優れたプロファイルを形成することができるという長所がある。また、同一のエッチング組成物を用いてゲート配線材料のＭｏ／Ａｌ−Ｎｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜、ソース／ドレイン配線材料のＭｏ単一膜に適用することによって工程の単純化、装備の効率性増大および原価節減が可能であるという効果がある。   According to the present invention, after wet etching, the Mo / AlNd double layer of the gate wiring material constituting the TFT of the thin film transistor liquid crystal display device using only the wet process using the same composition without additional dry etching. The film and the Mo / AlNd / Mo triple film have no undercut phenomenon of AlNd or Mo in the lower film, and by obtaining an excellent taper, it is possible to prevent defects that are disconnected at the inclined surface during the subsequent process, Even when the Mo single film of the drain wiring material is used, the reverse taper phenomenon can be prevented, the upper / lower layer can be prevented from being short-circuited, and an excellent profile with an angle of 40 to 80 ° can be formed. There is. In addition, the same etching composition is used to apply to the Mo / Al—Nd double film and the Mo / AlNd / Mo triple film of the gate wiring material and the Mo single film of the source / drain wiring material, thereby simplifying the process. This has the effect of increasing the efficiency of equipment and reducing costs.

以下、本発明を詳細に説明する。
本発明の薄膜トランジスタ液晶表示装置のエッチング組成物はａ）燐酸；ｂ）硝酸；ｃ）酢酸；ｄ）リチウム系化合物；ｅ）燐酸塩系化合物；およびｆ）水を含むことを特徴とする。 Hereinafter, the present invention will be described in detail.
The etching composition of the thin film transistor liquid crystal display device of the present invention includes a) phosphoric acid; b) nitric acid; c) acetic acid; d) lithium-based compound; e) phosphate-based compound; and f) water.

本発明に使用される前記燐酸、硝酸、酢酸、および水は半導体工程用として使用可能な純度のものを使用することがよく、市販のものを使用したり、工業用等級のものを当該分野で公知の方法によって精製して使用することもできる。   The phosphoric acid, nitric acid, acetic acid, and water used in the present invention are preferably those having a purity that can be used for a semiconductor process. Commercially available products or industrial grade products can be used in this field. It can also be purified and used by a known method.

本発明に使用される前記ａ）の燐酸は酸化アルミニウム（Ａｌ２Ｏ３）を分解する作用を果たし、このような現象は下記の反応メカニズムに従う。
Ａｌ２Ｏ３＋２Ｈ３ＰＯ４→２Ａｌ（ＰＯ４）＋３Ｈ２Ｏ
前記燐酸は、エッチング組成物に５０〜８０重量％で含まれるのが好ましく、さらに好ましくは６２〜７５重量％である。その含量が前記範囲内である場合には硝酸とアルミニウムとが反応して形成された酸化アルミニウム（Ａｌ２Ｏ３）のエッチング速度が速くなって生産性が向上する効果がある。 The phosphoric acid a) used in the present invention acts to decompose aluminum oxide (Al 2 O 3 ), and such a phenomenon follows the following reaction mechanism.
Al 2 O 3 + 2H 3 PO 4 → 2Al (PO 4 ) + 3H 2 O
The phosphoric acid is preferably contained in the etching composition in an amount of 50 to 80% by weight, more preferably 62 to 75% by weight. When the content is within the above range, there is an effect that the etching rate of aluminum oxide (Al 2 O 3 ) formed by the reaction of nitric acid and aluminum is increased and the productivity is improved.

本発明に使用される前記ｂ）の硝酸は、アルミニウムと反応して酸化アルミニウム（Ａｌ２Ｏ３）を形成させる作用を果たし、このような現象は下記の反応メカニズムに従う。
４Ａｌ＋２ＨＮＯ３→２Ａｌ２Ｏ３＋Ｎ２＋Ｈ２
前記硝酸は、エッチング組成物に２〜１５重量％で含まれるのが好ましく、さらに好ましくは２．５〜８重量％である。その含量が前記範囲内である場合には上部膜のＭｏ膜および下部膜のＡｌＮｄ膜で金属膜と他の層の間の選択比を効果的に調節できるという効果がある。また、Ｍｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜でアンダーカット現象を有効に防止することができるとともに、ＰＲアタックの発生を抑制することができる。なお、ＰＲアタックとは、エッチング工程の間にエッチング溶液によって攻撃され、フォトリソグラフィ工程によって、本来の形状又はパターンを維持することができないことを意味する。 The nitric acid b) used in the present invention reacts with aluminum to form aluminum oxide (Al 2 O 3 ), and such a phenomenon follows the following reaction mechanism.
4Al + 2HNO 3 → 2Al 2 O 3 + N 2 + H 2
The nitric acid is preferably contained in the etching composition at 2 to 15% by weight, more preferably 2.5 to 8% by weight. When the content is in the above range, the selectivity between the metal film and other layers can be effectively adjusted by the upper Mo film and the lower AlNd film. Moreover, the undercut phenomenon can be effectively prevented by the Mo / AlNd double film and the Mo / AlNd / Mo triple film, and the occurrence of PR attack can be suppressed. The PR attack means that the original shape or pattern cannot be maintained by the photolithography process because of being attacked by the etching solution during the etching process.

本発明に使用される前記ｃ）の酢酸は反応速度を調節する緩衝剤作用を果たす。
前記酢酸はエッチング組成物に３〜２０重量％で含まれるのが好ましく、さらに好ましくは６〜１５重量％である。その含量が前記範囲内である場合には反応速度を適切に調節してエッチング速度を向上させ、これによって生産性を向上させることができるという効果がある。 The acetic acid of c) used in the present invention serves as a buffer that adjusts the reaction rate.
The acetic acid is preferably contained in the etching composition at 3 to 20% by weight, more preferably 6 to 15% by weight. When the content is within the above range, there is an effect that the etching rate can be improved by appropriately adjusting the reaction rate, thereby improving the productivity.

本発明に使用される前記ｄ）のリチウム系化合物はＭｏ単一膜、Ｍｏ／ＡｌＮｄ二重膜、およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜のプロファイルを向上させる作用を果たす。
前記リチウム系化合物はＬｉＮＯ３、ＣＨ３ＣＯＯＬｉ、Ｃ４Ｈ５Ｏ３Ｌｉ、ＬｉＣｌ、ＬｉＦ、ＬｉＩ、Ｃ２ＨＬｉＯ４、ＬｉＣｌＯ４、Ｌｉ２Ｏ２、Ｌｉ２ＳＯ４、ＬｉＨ２ＰＯ４、またはＬｉ３ＰＯ４等を用いることができ、特にＬｉＮＯ３またはＣＨ３ＣＯＯＬｉを使用するのが好ましい。 The lithium-based compound d) used in the present invention serves to improve the profiles of Mo single film, Mo / AlNd double film, and Mo / AlNd / Mo triple film.
The lithium compound is LiNO 3 , CH 3 COOLi, C 4 H 5 O 3 Li, LiCl, LiF, LiI, C 2 HLiO 4 , LiClO 4 , Li 2 O 2 , Li 2 SO 4 , LiH 2 PO 4 , or Li 3 PO 4 or the like can be used, and it is particularly preferable to use LiNO 3 or CH 3 COOLi.

前記リチウム系化合物はエッチング組成物に０．０５〜３重量％で含まれるのが好ましく、さらに好ましくは０．１〜２重量％である。その含量が０．０５重量％以上の場合には、Ｍｏ単一膜で逆テーパおよびショルダー現象を有効に防止することができ、ゲート配線材料のＭｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜でＡｌＮｄのアンダーカット現象を防止することができる。また、３重量％より少ない場合には、Ｍｏ単一膜のエッチング速度を調整することができ、Ｍｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜で階段型プロファイルを防止することができる。   The lithium compound is preferably included in the etching composition at 0.05 to 3% by weight, more preferably 0.1 to 2% by weight. When the content is 0.05% by weight or more, reverse taper and shoulder phenomenon can be effectively prevented by the Mo single film, and the Mo / AlNd double film and the Mo / AlNd / Mo triple film of the gate wiring material can be prevented. The undercut phenomenon of AlNd can be prevented by the film. When the content is less than 3% by weight, the etching rate of the Mo single film can be adjusted, and the stepped profile can be prevented by the Mo / AlNd double film and the Mo / AlNd / Mo triple film.

本発明に使用される前記ｅ）の燐酸塩系化合物は、硝酸から酸化された酸化アルミニウムの分解を促進させ、このような現象は下記反応メカニズムに従う。
２Ａｌ２Ｏ３＋４ＰＯ４ ３−→４Ａｌ（ＰＯ４）＋３Ｏ２
前記燐酸塩系化合物は、ＰＯ４ ３−に解離させることができる化合物を使用することがよく、具体的にＮａＨ２ＰＯ４、Ｎａ２ＨＰＯ４、Ｎａ３ＰＯ４、ＮＨ４Ｈ２ＰＯ４、（ＮＨ４）２ＨＰＯ４、（ＮＨ４）３ＰＯ４、ＫＨ２ＰＯ４、Ｋ２ＨＰＯ４、Ｋ３ＰＯ４、Ｃａ（Ｈ２ＰＯ４）２、Ｃａ２ＨＰＯ４、またはＣａ３ＰＯ４等が挙げられ、好ましくは（ＮＨ４）Ｈ２ＰＯ４またはＫＨ２ＰＯ４である。 The phosphate compound of e) used in the present invention promotes the decomposition of aluminum oxide oxidized from nitric acid, and such a phenomenon follows the following reaction mechanism.
2Al 2 O 3 + 4PO 4 3 − → 4Al (PO 4 ) + 3O 2
The phosphate compound is preferably a compound that can be dissociated into PO 4 3− , specifically, NaH 2 PO 4 , Na 2 HPO 4 , Na 3 PO 4 , NH 4 H 2 PO 4 , (NH 4 ) 2 HPO 4 , (NH 4 ) 3 PO 4 , KH 2 PO 4 , K 2 HPO 4 , K 3 PO 4 , Ca (H 2 PO 4 ) 2 , Ca 2 HPO 4 , or Ca 3 PO 4 Etc., and (NH 4 ) H 2 PO 4 or KH 2 PO 4 is preferable.

前記燐酸塩系化合物は、エッチング組成物に０．１〜５重量％で含まれるのが好ましく、さらに好ましくは０．５〜３重量％で含まれる。その含量が前記範囲内である場合にはＭｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜で下部膜のＡｌＮｄのアンダーカット現象を発生させないだけでなく、同時にＭｏ単一膜でも優れたプロファイルを形成することができるという長所がある。   The phosphate compound is preferably contained in the etching composition in an amount of 0.1 to 5% by weight, more preferably 0.5 to 3% by weight. When the content is within the above range, the Mo / AlNd bilayer film and the Mo / AlNd / Mo trilayer do not cause the undercut phenomenon of the lower AlNd film, and at the same time, the Mo single film has an excellent profile. There is an advantage that can be formed.

本発明に使用される前記ｆ）の水はエッチング組成物に残量で含まれ、硝酸とアルミニウムが反応して生成された酸化アルミニウム（Ａｌ２Ｏ３）を分解し、エッチング組成物を希釈する作用を果たす。 The water of f) used in the present invention is contained in the etching composition in a residual amount, decomposes aluminum oxide (Al 2 O 3 ) generated by the reaction of nitric acid and aluminum, and dilutes the etching composition. Acts.

前記水は残量のイオン交換樹脂を通じてろ過した純水を使用するのが好ましく、特に比抵抗が１８ＭΩcm以上である超純水を使用するのがさらに好ましい。
また、本発明は前記のような成分からなるエッチング組成物でエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法を提供する。本発明の薄膜トランジスタ液晶表示装置の製造方法で前記のようなエッチング組成物を利用したエッチング工程前後には薄膜トランジスタ液晶表示装置の製造方法に適用される通常の工程が適用されることができるのはもちろんである。 The water is preferably pure water filtered through the remaining amount of ion exchange resin, and more preferably ultrapure water having a specific resistance of 18 MΩcm or more.
In addition, the present invention provides a method for manufacturing a thin film transistor liquid crystal display device including a step of etching with an etching composition comprising the above components. In the method for manufacturing a thin film transistor liquid crystal display device of the present invention, a normal process applied to the method for manufacturing a thin film transistor liquid crystal display device can be applied before and after the etching process using the etching composition as described above. It is.

本発明の薄膜トランジスタ液晶表示装置の製造方法は前記のような成分を含む本発明のエッチング組成物を用いて湿式エッチングした後、追加の乾式エッチングを実施しなくても同一の組成物を用いて湿式工程のみで薄膜トランジスタ液晶表示装置のＴＦＴを構成するゲート配線材料のＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜を下部膜のＡｌＮｄまたはＭｏのアンダーカット現象がなく、優れたテーパを得ることによって、後続工程時に傾斜面で断線される不良を防止することができる。同時にソース／ドレイン配線材料のＭｏ単一膜でも逆テーパ現象を防止して、上／下層が短絡される不良を防止することができ、図１に示したように角度が４０〜７０°の優れたプロファイルを形成することができるという長所がある。また、同一のエッチング組成物を用いてゲート配線材料のＭｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜、ソース／ドレイン配線材料のＭｏ単一膜に適用することによって工程の単純化、装備の効率性増大および原価節減が可能であるという効果がある。   The method of manufacturing the thin film transistor liquid crystal display device of the present invention is a wet etching process using the same composition without performing additional dry etching after wet etching using the etching composition of the present invention containing the above components. The Mo / AlNd double film and the Mo / AlNd / Mo triple film of the gate wiring material constituting the TFT of the thin film transistor liquid crystal display device only by the process have no undercut phenomenon of the lower film AlNd or Mo, and obtain an excellent taper. Therefore, it is possible to prevent a failure that is disconnected at the inclined surface in the subsequent process. At the same time, the reverse taper phenomenon can be prevented even with a single Mo film of the source / drain wiring material, and the upper / lower layer can be prevented from being short-circuited. As shown in FIG. There is an advantage in that a profile can be formed. Simplify and equip the process by applying the same etching composition to Mo / AlNd double film and Mo / AlNd / Mo triple film of gate wiring material and Mo single film of source / drain wiring material using the same etching composition It is possible to increase efficiency and reduce costs.

なお、本発明においては、薄膜トランジスタ液晶表示装置のＴＦＴの電極材料、配線材料について説明しているが、必ずしも液晶表示装置に使用されなくてもよく、他のデバイスに利用されるものであってもよい。また、ＴＦＴに限らず、通常のトランジスタ、キャパシタ等の半導体装置、半導体素子等の種々の素子に用いることができる。さらに、電極、配線のみならず、種々の金属、導電性材料を含む種々の素子、装置、部材等のエッチング組成物として利用することができる。なかでも、Ｍｏ、Ａｌ、Ｎｄの単層膜、これらの合金単層膜、これらの単一積層膜、これらの合金積層膜等、種々の形態の金属、導電性材料に対して適用することができる。   In the present invention, the electrode material and the wiring material of the TFT of the thin film transistor liquid crystal display device are described. However, the material is not necessarily used for the liquid crystal display device, and may be used for other devices. Good. Further, the present invention can be used not only for TFTs but also for various elements such as ordinary transistors, semiconductor devices such as capacitors, and semiconductor elements. Furthermore, it can be used as an etching composition for various elements, devices, members and the like including not only electrodes and wirings but also various metals and conductive materials. In particular, it can be applied to various forms of metals and conductive materials such as Mo, Al, Nd single layer films, alloy single layer films, single layer stacks, alloy layer stacks, etc. it can.

以下、本発明の理解のために好ましい実施形態を提示するが、下記の実施形態は本発明を例示するものに過ぎず、本発明の範囲が下記の実施形態に限定されるのではない。
実施例１
燐酸６８重量％、硝酸４重量％、酢酸１３重量％、ＬｉＮＯ３ １．０重量％、ＫＨ２ＰＯ４ １．５重量％、および残量の水を均一に混合してエッチング組成物を調製した。 Hereinafter, preferred embodiments will be presented for the understanding of the present invention. However, the following embodiments are merely illustrative of the present invention, and the scope of the present invention is not limited to the following embodiments.
Example 1
An etching composition was prepared by uniformly mixing 68% by weight of phosphoric acid, 4% by weight of nitric acid, 13% by weight of acetic acid, 1.0% by weight of LiNO 3 , 1.5% by weight of KH 2 PO 4 , and the remaining amount of water. .

前記調製したエッチング組成物をＭｏ単一膜に適用した結果、図１に示したようにプロファイルの角度が４０〜７０°であって、優れているのを確認することができた。
また、前記製造したエッチング組成物をＭｏ／ＡｌＮｄ二重膜に適用した結果、図２に示したようにアンダーカット現象がなく、優れたプロファイルを形成するのを確認することができた。 As a result of applying the prepared etching composition to the Mo single film, it was confirmed that the profile angle was 40 to 70 ° as shown in FIG.
Moreover, as a result of applying the manufactured etching composition to the Mo / AlNd bilayer film, it was confirmed that an excellent profile was formed without the undercut phenomenon as shown in FIG.

また、前記製造したエッチング組成物をＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用した結果、図３に示したようにアンダーカット現象がなく、優れたプロファイルを形成するのを確認することができた。   Moreover, as a result of applying the manufactured etching composition to the Mo / AlNd / Mo trilayer, it was confirmed that there was no undercut phenomenon as shown in FIG. 3 and an excellent profile was formed.

比較例１〜４
前記実施例１で下記表１に示す成分と組成比で使用したことを除いては前記実施例１と同様の方法でエッチング組成物を調製した。下記表１で単位は重量％である。 Comparative Examples 1-4
An etching composition was prepared in the same manner as in Example 1 except that the components and composition ratios shown in Table 1 below were used in Example 1. In Table 1 below, the unit is% by weight.

Figure 0005041870
前記実施例１、および比較例１〜４で製造したエッチング組成物の性能を、下記のような方法によって評価し、その結果を図１〜７、および下記表２に示した。
Figure 0005041870
 The performances of the etching compositions produced in Example 1 and Comparative Examples 1 to 4 were evaluated by the following methods, and the results are shown in FIGS. 1 to 7 and Table 2 below.

まず、ガラス基板上にＭｏ単一膜、Ｍｏ／ＡｌＮｄ二重膜、およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜をスパッタリングによって形成した後、フォトレジストをコーティングし、現像によってパターンを形成した試片に前記実施例１、および比較例１〜４で調製したエッチング組成物をスプレーしてエッチング処理した。エッチング後、断面を走査電子顕微鏡（ＳＥＭ、Ｓ−４２００、日立社）で観察してエッチング組成物の性能を評価した。   First, a Mo single film, a Mo / AlNd double film, and a Mo / AlNd / Mo triple film are formed on a glass substrate by sputtering, then coated with a photoresist, and a pattern is formed by development. Etching compositions prepared in Example 1 and Comparative Examples 1 to 4 were sprayed and etched. After etching, the cross-section was observed with a scanning electron microscope (SEM, S-4200, Hitachi) to evaluate the performance of the etching composition.

Figure 0005041870
前記表２に示したように、本発明によって製造した実施例１のエッチング組成物は比較例１〜４と比較してＭｏ単一膜、Ｍｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜で全て優れたエッチング効果を奏するのを確認することができた。
Figure 0005041870
 As shown in Table 2, the etching composition of Example 1 manufactured according to the present invention has a Mo single film, a Mo / AlNd double film, and a Mo / AlNd / Mo triple film as compared with Comparative Examples 1 to 4. It was confirmed that all exhibited excellent etching effects.

また、エッチング断面の走査顕微鏡写真は図１〜３に示したように、本発明によって製造した実施例１のエッチング組成物は図２および図３に示したようにゲート配線材料のＭｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜でアンダーカット現象が発生せず、同時に図１に示したようにソース／ドレイン配線材料のＭｏ単一膜でも優れたプロファイルを形成するのを確認することができた。   Moreover, as shown in FIGS. 1 to 3 for scanning micrographs of the etching cross section, the etching composition of Example 1 manufactured according to the present invention is Mo / AlNd 2 as a gate wiring material as shown in FIGS. It is confirmed that the undercut phenomenon does not occur in the heavy film and the Mo / AlNd / Mo triple film, and at the same time, an excellent profile is formed even in the Mo single film of the source / drain wiring material as shown in FIG. did it.

一方、燐酸を５０重量％未満で含む比較例１、硝酸を２重量％未満で含む比較例２の場合には図４および図５に示したようにＭｏ／ＡｌＮｄ二重膜でアンダーカット現象が発生し、Ｍｏ／ＡｌＮｄ／Ｍｏ三重膜では下部膜のＭｏのテーリング現象が発生するのを確認することができた。また、リチウム系化合物を０．０５重量％未満で含む比較例３の場合には図６に示したようにＭｏ単一膜ではショルダーが発生する不良なプロファイルを形成し、Ｍｏ／ＡｌＮｄ二重膜ではアンダーカット現象が発生するのを確認することができた。   On the other hand, in the case of Comparative Example 1 containing less than 50% by weight of phosphoric acid and Comparative Example 2 containing less than 2% by weight of nitric acid, the undercut phenomenon occurs in the Mo / AlNd double film as shown in FIGS. It was confirmed that in the Mo / AlNd / Mo triple film, the tailing phenomenon of Mo in the lower film occurred. Further, in the case of Comparative Example 3 containing less than 0.05% by weight of a lithium compound, as shown in FIG. 6, a poor profile in which a shoulder is generated is formed in the Mo single film, and the Mo / AlNd double film is formed. Then, it was confirmed that the undercut phenomenon occurred.

加えて、燐酸塩系化合物を０．１重量％未満で用いた比較例４の場合には、図７に示したようにＭｏ／ＡｌＮｄ二重膜とＭｏ／ＡｌＮｄ／Ｍｏ三重膜でアンダーカット現象が発生し、Ｍｏ単一膜ではショルダーが発生する不良プロファイルを形成するのを確認することができた。   In addition, in the case of Comparative Example 4 in which the phosphate compound is used at less than 0.1% by weight, the undercut phenomenon is caused by the Mo / AlNd double film and the Mo / AlNd / Mo triple film as shown in FIG. It was confirmed that a defective profile in which a shoulder was generated in the Mo single film was formed.

このような結果から、本発明によるエッチング組成物は従来のエッチング組成物を利用してエッチングする場合と比較して、優れたステップカバレッジを形成したことが分かった。   From these results, it was found that the etching composition according to the present invention formed excellent step coverage as compared with the case of etching using the conventional etching composition.

本発明は、薄膜トランジスタ液晶表示装置のみならず、種々の半導体装置、半導体素子等の電極材料、導電層、反射層等のエッチングにおけるエッチャントとして、さらには、金属膜、金属部材をエッチングすることを必要とする装置、部材等に広範囲に利用することが可能である。   The present invention requires not only etching of thin film transistor liquid crystal display devices but also etching of metal films and metal members as etchants in etching of various semiconductor devices, electrode materials such as semiconductor elements, conductive layers and reflective layers. It can be used for a wide range of devices and members.

本発明の一実施形態によって製造したエッチング組成物をＭｏ単一膜に適用したプロファイルである。It is the profile which applied the etching composition manufactured by one Embodiment of this invention to Mo single film. 本発明の一実施形態によって製造したエッチング組成物をＭｏ／ＡｌＮｄ二重膜に適用したプロファイルを示す写真である。3 is a photograph showing a profile in which an etching composition manufactured according to an embodiment of the present invention is applied to a Mo / AlNd bilayer film. 本発明の一実施形態によって製造したエッチング組成物をＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用したプロファイルを示す写真である。It is a photograph which shows the profile which applied the etching composition manufactured by one Embodiment of this invention to the Mo / AlNd / Mo trilayer. 燐酸を少なく使用した比較例のエッチング組成物をＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用したプロファイルを示す写真である。It is a photograph which shows the profile which applied the etching composition of the comparative example using little phosphoric acid to the Mo / AlNd double film and the Mo / AlNd / Mo triple film. 硝酸を少なく使用した比較例のエッチング組成物をＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用したプロファイルを示す写真である。It is a photograph which shows the profile which applied the etching composition of the comparative example which used less nitric acid to the Mo / AlNd double film and the Mo / AlNd / Mo triple film. リチウム系化合物を少なく使用した比較例のエッチング組成物をＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用したプロファイルを示す写真である。It is a photograph which shows the profile which applied the etching composition of the comparative example which used few lithium compounds to the Mo / AlNd double film and the Mo / AlNd / Mo triple film. 燐酸塩系化合物を少なく使用した比較例のエッチング組成物をＭｏ／ＡｌＮｄ二重膜およびＭｏ／ＡｌＮｄ／Ｍｏ三重膜に適用したプロファイルを示す写真である。It is a photograph which shows the profile which applied the etching composition of the comparative example using few phosphate compounds to the Mo / AlNd double film and the Mo / AlNd / Mo triple film.

Claims (4)

薄膜トランジスタ液晶表示装置のＭｏ／ＡｌＮｄ／Ｍｏ三層膜のエッチング組成物であって、
ａ）燐酸５０〜８０重量％；
ｂ）硝酸２〜１５重量％；
ｃ）酢酸３〜２０重量％；
ｄ）リチウム化合物０．０５〜３重量％；
ｅ）燐酸塩化合物０．１〜５重量％；および
ｆ）残量の水
を含むことを特徴とする薄膜トランジスタ液晶表示装置のエッチング組成物。 A etching composition of Mo / AlNd / Mo three-layered film of a thin film transistor liquid crystal display device,
a) 50-80% by weight phosphoric acid;
b) 2-15% by weight of nitric acid;
c) 3-20% by weight acetic acid;
d) lithium of compound 0.05-3% by weight;
e) phosphate chloride compound 0.1-5 wt%; and f) etching composition of the thin film transistor liquid crystal display device which comprises a water remaining. 前記ｄ）のリチウム化合物が、ＬｉＮＯ3、ＣＨ3ＣＯＯＬｉ、Ｃ4Ｈ5Ｏ3Ｌｉ、ＬｉＣｌ、ＬｉＦ、ＬｉＩ、Ｃ2ＨＬｉＯ4、ＬｉＣｌＯ4、Ｌｉ2Ｏ2、Ｌｉ2ＳＯ4、ＬｉＨ2ＰＯ4およびＬｉ3ＰＯ4からなる群より選択される１種以上の化合物である請求項１に記載のエッチング組成物。 Lithium of compounds of the d) are, LiNO 3, CH 3 COOLi, C 4 H 5 O 3 Li, LiCl, LiF, LiI, C 2 HLiO 4, LiClO 4, Li 2 O 2, Li 2 SO 4, LiH 2 PO 4 and Li 3 et etching composition according to claim 1 is one or more compounds selected from the group consisting of PO 4. 前記ｅ）の燐酸塩化合物が、ＮａＨ2ＰＯ4、Ｎａ2ＨＰＯ4、Ｎａ3ＰＯ4、ＮＨ4Ｈ2ＰＯ4、（ＮＨ4）2ＨＰＯ4、（ＮＨ4）3ＰＯ4、ＫＨ2ＰＯ4、Ｋ2ＨＰＯ4、Ｋ3ＰＯ4、Ｃａ（Ｈ2ＰＯ4）2、Ｃａ2ＨＰＯ4、およびＣａ3ＰＯ4からなる群より選択される1種以上の化合物である請求項１に記載のエッチング組成物。 Phosphate chloride compound of the e) is, NaH 2 PO 4, Na 2 HPO 4, Na 3 PO 4, NH 4 H 2 PO 4, (NH 4) 2 HPO 4, (NH 4) 3 PO 4, KH 2 2. One or more compounds selected from the group consisting of PO 4 , K 2 HPO 4 , K 3 PO 4 , Ca (H 2 PO 4 ) 2 , Ca 2 HPO 4 , and Ca 3 PO 4. d etching composition as claimed. 請求項１〜３のうちのいずれか一項のエッチング組成物を利用してエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法。 The manufacturing method of a thin-film transistor liquid crystal display device including the process etched using the etching composition as described in any one of Claims 1-3 .
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