CN113529084A - Etching solution for TFT-array substrate - Google Patents
Etching solution for TFT-array substrate Download PDFInfo
- Publication number
- CN113529084A CN113529084A CN202110640813.7A CN202110640813A CN113529084A CN 113529084 A CN113529084 A CN 113529084A CN 202110640813 A CN202110640813 A CN 202110640813A CN 113529084 A CN113529084 A CN 113529084A
- Authority
- CN
- China
- Prior art keywords
- etching
- tft
- array substrate
- metal
- regulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 11
- -1 alkaline earth metal salt Chemical class 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 6
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 6
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 11
- 238000001039 wet etching Methods 0.000 abstract description 6
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002641 lithium Chemical class 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003202 NH4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Weting (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses an etching solution for a TFT-array substrate, which comprises 40-80% of acid components, 10-30% of DIW ultrapure water and 10-30% of Mo etching regulator; the Mo etching regulator comprises ammonium salt and alkaline earth metal salt; the scheme takes acid as a main component, solves the problem of different etching speeds of each metal by adjusting the proportion, can also effectively improve over-etching caused by the galvanic phenomenon and ensure the uniformity of the TFT-array substrate; in addition, the etching speed of the metal is controlled by adding the regulator, the etching profile of the metal layer in wet etching becomes excellent, and extra dry etching is not needed to remove residual metal, so that the process is smooth, the production efficiency is improved, and the cost is reduced.
Description
Technical Field
The invention relates to an etching solution for a TFT-array substrate, belonging to the technical field of semiconductor wet etching.
Background
The semiconductor is usually etched by a wet method in the processing process, and two etching procedures are generally required for etching two metal materials in the wet etching process, so that the problems of high cost, difficult process and the like are caused, and the possibility of product damage is increased by multiple procedures; by changing the formula of the etching solution, the etching process can be reduced to one step, and the etching processing can be simply and economically carried out.
Disclosure of Invention
In view of the above technical problems, the present invention aims to: an etching solution for a TFT-array substrate is provided.
The technical solution of the invention is realized as follows: an etching solution for a TFT-array substrate comprises 40-80% of acid components, 10-30% of DIW ultrapure water and 10-30% of Mo etching regulator; the components of the Mo etching regulator are ammonium salt and alkaline earth metal salt.
Preferably, the acidic component is one or a combination of several of phosphoric acid, nitric acid, acetic acid, hydrochloric acid and hydrofluoric acid.
Preferably, the metal component in the alkaline earth metal salt is one or a combination of several of sodium, potassium and lithium.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the etching solution for the TFT-array substrate takes acid as a main component, solves the problem of different etching speeds of each metal by adjusting the proportion, can effectively improve over-etching caused by the galvanic phenomenon, and ensures the uniformity of the TFT-array substrate; in addition, the etching speed of the metal is controlled by adding the regulator, the etching profile of the metal layer in wet etching becomes excellent, and extra dry etching is not needed to remove residual metal, so that the process is smooth, the production efficiency is improved, and the cost is reduced.
Detailed Description
The present invention will be described with reference to examples.
The etching solution for the TFT-array substrate comprises 40-80% of acid components, 10-30% of DIW ultrapure water and 10-30% of Mo etching regulator; the acidic component is one or a combination of more of phosphoric acid, nitric acid, acetic acid, hydrochloric acid and hydrofluoric acid; the Mo etching regulator comprises ammonium salt and alkaline earth metal salt, wherein the metal component in the alkaline earth metal salt is one or a combination of sodium, potassium and lithium.
The component contents of examples 1 to 3 are shown in the following table:
| raw materials | Example 1 | Example 2 | Example 3 |
| Phosphoric acid | 61 | 0 | 0 |
| Nitric acid | 2.5 | 0 | 45 |
| Acetic acid | 6.6 | 10.5 | 17 |
| Hydrochloric acid | 0 | 44.3 | 0 |
| Hydrofluoric acid | 0 | 0 | 16 |
| DIW ultrapure water | 14.9 | 20.2 | 12 |
| Alkaline earth metal salt | 15 | 25 | 10 |
Wherein, the unit of each component is percentage, the value 0 is that the component is not included, and the total of the raw materials of the formula in each embodiment is 100%.
The etching solution composition provided by the scheme utilizes a few additives to make undercut (undercut) generated by metal etching of a double-layer film (Mo/AlNd) or a triple-layer film (Mo/Al/Mo) or extrusion generated by intermetallic etching speed difference protrude, so that excellent taper etching profile (profile) can be obtained.
The Mo etching regulator is an additive, and selectively regulates the etching speed of molybdenum in the uniform etching process of a Mo/AlNd double-layer film or a Mo/Al/Mo three-layer film so as to prevent the deviation possibly generated by the difference of oxidation tendency of the aluminum layer and the molybdenum layer and enable the etching to be a proper etching profile; alkaline earth metal (sodium or potassium or lithium) salt is used as Mo etching regulator, and the mechanism is that monovalent alkaline ions of ammonium salt and alkaline earth metal (sodium or potassium or lithium) salt are compounded with insoluble molybdenum on the surface of the molybdenum film, such as molybdenum (Mo) and M2O. MoO3 or M2O. 2MoO3 (M is NH4 or Na or K) have micro-reactivity to form oxide, so that the molybdenum etching reaction rate of molybdenum converted into MoPO4 is reduced; and the residual metal is removed without additionally performing dry etching, so that the process is smooth, the production efficiency is improved, and the cost is reduced.
The ammonium salt and the alkaline earth metal salt used as the Mo etching regulator may also reduce gelation (adhesion) between photoresist (photoresist) and metal in the metal layer, make the etching profile of the metal layer in wet etching excellent, and do not generate a lot of remnant.
And has good oxidation ability to metal, but does not contain unstable components such as hydrogen peroxide which can shorten the life of the etching solution, fluorine compounds which corrode the substrate glass, and the like, and the metal of the double or triple layer film is subjected to one-time wet etching by using other types of additives. A superior taper etching profile can be obtained only by the process and no fission of PR used as a mask is generated.
Even if the substrate size is large, the etching uniformity can be maintained, and the generation of stains due to the non-uniform etching can be prevented.
The etching speed is optimized to realize the purpose, the process profit is reduced due to the high etching speed, the reaction speed is adjusted by the action of a buffer solution generated by acetic acid generated by stains due to the generation of uneven etching profiles in the substrate, and the yield can be improved and the process profit can be ensured due to the fact that the boron-containing compound with the effect of inhibiting the etching speed is used as an additive and the content is optimized because the sufficient effect cannot be achieved by only the acetic acid.
The above-mentioned embodiments are merely illustrative of the technical idea and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the scope of the present invention.
Claims (3)
1. An etchant for a TFT-array substrate, comprising: comprises 40-80% of acid component, 10-30% of DIW ultrapure water and 10-30% of Mo etching regulator; the components of the Mo etching regulator are ammonium salt and alkaline earth metal salt.
2. The etching solution for a TFT-array substrate as set forth in claim 1, wherein: the acidic component is one or a combination of more of phosphoric acid, nitric acid, acetic acid, hydrochloric acid and hydrofluoric acid.
3. The etching solution for a TFT-array substrate as set forth in claim 1, wherein: the metal component in the alkaline earth metal salt is one or a combination of sodium, potassium and lithium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110640813.7A CN113529084A (en) | 2021-06-09 | 2021-06-09 | Etching solution for TFT-array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110640813.7A CN113529084A (en) | 2021-06-09 | 2021-06-09 | Etching solution for TFT-array substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113529084A true CN113529084A (en) | 2021-10-22 |
Family
ID=78095730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110640813.7A Pending CN113529084A (en) | 2021-06-09 | 2021-06-09 | Etching solution for TFT-array substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113529084A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115948746A (en) * | 2022-12-30 | 2023-04-11 | 浙江奥首材料科技有限公司 | Al/Mo etching solution, and preparation method and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006339635A (en) * | 2005-05-30 | 2006-12-14 | Dongjin Semichem Co Ltd | Etching composition |
| JP2007305996A (en) * | 2006-05-10 | 2007-11-22 | Dongjin Semichem Co Ltd | Etching composition of thin film transistor liquid display device, and manufacturing method of thin film transistor liquid display device |
| CN101392375A (en) * | 2007-09-18 | 2009-03-25 | 株式会社东进世美肯 | Etchant composition for forming circuit in thin film transistor liquid crystal display device |
| CN101451241A (en) * | 2007-12-07 | 2009-06-10 | 株式会社东进世美肯 | Etchant composition for patterning circuits in thin film transistor-liquid crystal devices |
| CN107151795A (en) * | 2017-06-02 | 2017-09-12 | 苏州晶瑞化学股份有限公司 | A kind of copper-molybdenum alloy film etching solution |
| CN109594079A (en) * | 2017-09-30 | 2019-04-09 | 深圳新宙邦科技股份有限公司 | A kind of molybdenum aluminium shares etching solution and engraving method |
-
2021
- 2021-06-09 CN CN202110640813.7A patent/CN113529084A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006339635A (en) * | 2005-05-30 | 2006-12-14 | Dongjin Semichem Co Ltd | Etching composition |
| JP2007305996A (en) * | 2006-05-10 | 2007-11-22 | Dongjin Semichem Co Ltd | Etching composition of thin film transistor liquid display device, and manufacturing method of thin film transistor liquid display device |
| CN101392375A (en) * | 2007-09-18 | 2009-03-25 | 株式会社东进世美肯 | Etchant composition for forming circuit in thin film transistor liquid crystal display device |
| JP2009076910A (en) * | 2007-09-18 | 2009-04-09 | Dongjin Semichem Co Ltd | Etching fluid composition for metal wiring formation for tft-lcd |
| CN101451241A (en) * | 2007-12-07 | 2009-06-10 | 株式会社东进世美肯 | Etchant composition for patterning circuits in thin film transistor-liquid crystal devices |
| CN107151795A (en) * | 2017-06-02 | 2017-09-12 | 苏州晶瑞化学股份有限公司 | A kind of copper-molybdenum alloy film etching solution |
| CN109594079A (en) * | 2017-09-30 | 2019-04-09 | 深圳新宙邦科技股份有限公司 | A kind of molybdenum aluminium shares etching solution and engraving method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115948746A (en) * | 2022-12-30 | 2023-04-11 | 浙江奥首材料科技有限公司 | Al/Mo etching solution, and preparation method and application thereof |
| CN115948746B (en) * | 2022-12-30 | 2024-04-30 | 浙江奥首材料科技有限公司 | Al/Mo etching solution, and preparation method and application thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211022 |
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