TWI385804B - 薄膜電晶體液晶顯示裝置之蝕刻組成物(二) - Google Patents
薄膜電晶體液晶顯示裝置之蝕刻組成物(二) Download PDFInfo
- Publication number
- TWI385804B TWI385804B TW094133525A TW94133525A TWI385804B TW I385804 B TWI385804 B TW I385804B TW 094133525 A TW094133525 A TW 094133525A TW 94133525 A TW94133525 A TW 94133525A TW I385804 B TWI385804 B TW I385804B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- liquid crystal
- display device
- crystal display
- thin film
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims description 74
- 239000000203 mixture Substances 0.000 title claims description 57
- 239000010408 film Substances 0.000 claims description 62
- 239000010409 thin film Substances 0.000 claims description 27
- 239000004973 liquid crystal related substance Substances 0.000 claims description 26
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 24
- 239000002356 single layer Substances 0.000 claims description 19
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- -1 alkali metal cation Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本發明係有關一種薄膜電晶體液晶顯示裝置之蝕刻組成物,更詳細地說,係關於使用同一組成物將構成薄膜電晶體液晶顯示裝置之TFT(thin film transistor)的閘極線材料Mo/Al-Nd雙層膜,在不發生下部膜Al-Nd的底切(undercut)現象下進行濕式蝕刻,而既可獲得優良的斜面,同時亦可在源極/汲極(source/drain)線材料的Mo單層膜形成優良的輪廓之蝕刻組成物。
蝕刻步驟是在基板上形成微細電路的過程,利用顯影步驟而形成和所形成之光阻圖案相同的金屬圖案。
蝕刻步驟依其方式可大致區分為濕式蝕刻和乾式蝕刻;濕式蝕刻係利用與金屬等起反應而使之腐蝕的酸系列化學品來溶出沒有光阻圖案的部分,乾式蝕刻則是使離子加速以除去露出部位的金屬藉而形成圖案。
乾式蝕刻比起濕式蝕刻有具有非等向性輪廓,蝕刻控制力優異的長處。但是,設備價格昂貴且大面積化有困難度,並因蝕刻速度慢而有生產性(throughput)低的問題。
反之,濕式蝕刻比起乾式蝕刻則有更能做大量及大型處理,並因蝕刻速度快所以有生產性高且設備價格便宜的長處。但是,有蝕刻劑及純水使用量多,且廢液量也多的問題。
通常在實施乾式蝕刻時,為了除去表面之部分硬化的光阻(photoresist),會追加電漿除灰(plasma ashing)步驟,而因其成為設備價格、製程時間損失等生產性降低及製品競爭力弱化的主要因素,故實際上在現場的實情主要還是使用濕式蝕刻。
而,濕式蝕刻所使用的蝕刻劑因為要求更精密的微細電路而依欲蝕刻之金屬的種類適用於特定情況。
下述專利文獻1揭示一種Mo/Al-Nd、Mo-W/Al-Nd、Mo/Al-Nd/Mo、Mo-W/Al-Nd/Mo-W、Mo單層膜及Mo-W單層膜全部都可以適用之蝕刻液,且為含有磷酸、硝酸、醋酸、鉬蝕刻抑制劑(銨鹽)及水之蝕刻液。
【專利文獻1】大韓民國專利申請第2002-0017093號
但是,用前述之習知蝕刻技術或蝕刻組成物來蝕刻構成薄膜電晶體液晶顯示裝置之TFT的閘極電極用金屬膜Mo/Al-Nd雙層膜時,會有發生上部Mo膜的突出現象和下部Al-Nd膜的底切現象的問題,因而有必須實施追加製程以除去該上部膜的突出現象,以及下部膜的底切現象在傾斜面造成上部膜的斷線或上下部金屬短路的問題。
此外,前述習知的蝕刻組成物在蝕刻構成薄膜電晶體液晶顯示裝置的源極/汲極電極用金屬膜Mo膜時,會有造成斜面不良,及使後續製程中所積層的上部膜之階梯覆蓋率(step coverage)發生不良的問題。
因此,實際的狀態是有必要進一步就不僅可以一體適用於構成習知之薄膜電晶體液晶顯示裝置的TFT之閘極及源極/汲極電極用金屬配線材料,而且可以分別地實現適切的終點偵測技術(end point detection,EPD),並且形成優良的輪廓之蝕刻溶液加以研究。
為解決此等習知技術的問題點,本發明之目的在於提供一種使用同一組成物,僅利用濕式步驟將構成薄膜電晶體液晶顯示裝置之TFT的閘極線材料Mo/Al-Nd雙層膜,在沒有下部膜Al-Nd之底切現象下進行蝕刻,即可以獲得優良的斜面,同時也可以在源極/汲極(source/drain)線材料的Mo單層膜形成優良輪廓(profile)之蝕刻組成物,及利用該組成物之薄膜電晶體液晶顯示裝置的製造方法。
本發明另一目的係為提供一種在使用同一組成物來適用於構成薄膜電晶體液晶顯示裝置之TFT的閘極線材料Mo/Al-Nd雙層膜,和源極/汲極線材料的Mo單層膜上顯示優良的蝕刻效果,因而可以增大設備的效率性及節約成本價格之蝕刻組成物及利用該組成物之薄膜電晶體液晶顯示裝置的製造方法。
本發明又一目的係為提供一種於濕式蝕刻後並不追加實施乾式蝕刻,而僅以濕式蝕刻來應用於閘極線材料Mo/Al-Nd雙層膜,和源極/汲極線材料的Mo單層膜上即顯示優良的蝕刻效果,因而可以使製程單純化,且有效節約成本及提高生產性的蝕刻組成物,以及利用該組成物之薄膜電晶體液晶顯示裝置的製造方法。
本發明之其他目的亦在於提供一種可以調節蝕刻組成物的蝕刻能力而能夠適用於所有的閘極及源極/汲極線材料,以對各別的配線材料表現優良的蝕刻效果之蝕刻組成物,以及利用該組成物之薄膜電晶體液晶顯示裝置的製造方法。
為達成前述目的,本發明提供一種含有,a)磷酸50至75重量%;b)硝酸1至15重量%;c)醋酸1至15重量%;d)[H+
]離子濃度調節劑0.1至5重量%;以及e)餘量的水之薄膜電晶體液晶顯示裝置的蝕刻組成物。
另外,本發明提供一種包含以前述蝕刻組成物進行蝕刻的階段之薄膜電晶體液晶顯示裝置的製造方法。
本發明之蝕刻組成物的優點在於,濕式蝕刻後並不追加實施乾式蝕刻,而可以使用同一組成物僅以濕式製程將構成薄膜電晶體液晶顯示裝置之TFT的閘極線材料Mo/Al-Nd雙層膜,在沒有下部膜Al-Nd之底切現象下進行蝕刻即獲得優良的斜面,同時也可以在源極/汲極線材料的Mo單層膜形成優異的輪廓。另外,使用同一蝕刻組成物適用於閘極線材料Mo/Al-Nd雙層膜與源極/汲極線材料的Mo單層膜,因而不僅製程單純化、設備的效率性增大且節約成本價格,且可使蝕刻組成物的表面張力降低而使得蝕刻組成物擴散良好,故有可以在大型基板上使蝕刻均勻性(uniformity)增加的效果。
第1圖將本發明之一實施例的蝕刻組成物適用於Mo/Al-Nd雙層膜及Mo單層膜的結果之照片。
第2圖將習知之蝕刻組成物適用於Mo/Al-Nd雙層膜及Mo單層膜的結果之照片。
以下將詳細說明本發明。
本發明之薄膜液晶顯示裝置的蝕刻組成物係以含有a)磷酸50至75重量%,b)硝酸1至15重量%,c)醋酸1至15重量%,d)[H+
]離子濃度調節劑0.1至5重量%,及e)餘量的水為其特徵。
本發明所使用的磷酸、硝酸、醋酸及水,以使用可以供半導體製程用的純度者為佳,可以或使用市售產品,或者亦可使用將工業用等級的產品以熟習該技藝者一般所公知的方法加以精製而得的產品。
本發明所使用之前述a)的磷酸會執行分解氧化鋁的作用。
前述磷酸在蝕刻組成物中以含有50至70重量%為佳,更佳為含有64至72重量%。當其含量在前述範圍內時,硝酸和鋁反應而形成的氧化鋁就會被適切地分解而使蝕刻速度變快,有提高生產性的效果。
本發明所使用之前述b)的硝酸會與鋁反應而形成氧化鋁。
前述硝酸在蝕刻組成物中以含有1至15重量%為佳,更佳為含有4至8重量%。當其含量在前述範圍內時,具有可以有效地調節由上部膜之Mo膜及下部膜之Al-Nd膜所構成的閘極金屬膜和其他層之間的選擇比的效果;尤其,當前述硝酸不滿1重量%時,會有在Mo/Al-Nd雙層膜發生底切現象的問題。
本發明中所使用之前述c)的醋酸可以發揮調節反應速度之緩衝劑的作用。
前述醋酸在蝕刻組成物中以含有1至15重量%為佳,更佳為含有5至10重量%。當其含量在前述範圍內時,具有可以適切地調節反應速度而使蝕刻速度提高,因而使生產性提高的效果。
本發明所使用之前述d)的[H+
]離子濃度調節劑發揮之作用在於調節鉬(molybdenum)和鋁(aluminium)金屬的蝕刻速度。此係在同一種陰離子存在下調節[H+
]離子的量而調節金屬之蝕刻速度。
前述[H+
]離子濃度調節劑為離子性鹽類,陽離子可以使用NH4 +
、N(CH3
)4 +
等之胺系列,Li+
、Na+
、K+
等之鹼金屬陽離子,Mg2 +
、Ca2 +
等之鹼土金屬(alkali-earth metals)陽離子,或Fe3 +
、Cu2 +
等之過渡金屬(transition metal)陽離子等,陰離子則可以使用NO3 -
、CH3
COO-
、PO4 -
或OH-
等。
前述[H+
]離子濃度調節劑在蝕刻組成物中以含有0.1至5重量%為佳。當其含量在前述範圍時,不僅在Mo/Al-Nd雙層膜可以使下部膜Al-Nd不發生底切現象,同時具有亦可在Mo單層膜形成優良輪廓的效果。
本發明中所使用之前述e)的水在蝕刻組成物中係以餘量含有,發揮使硝酸和鋁反應所生成之氧化鋁分解,以及稀釋蝕刻組成物的作用。
前述水以使用餘量之通過離子交換樹脂過濾過的純水為佳,尤其以使用電阻值在18 mega ohm(MΩ)以上的超純水更佳。
此外,本發明提供一種包括以利用如前所述之成分做成的蝕刻組成物來進行蝕刻的階段之薄膜電晶體液晶顯示裝置的製造方法。本發明之薄膜電晶體液晶顯示裝置的製造方法中,當然也可以在利用如前所述之蝕刻組成物的蝕刻步驟前後,採用適用於薄膜電晶體液晶顯示裝置之製造方法的一般步驟。
本發明之薄膜電晶體液晶顯示裝置的製造方法係使用含有如前所述的成分之本發明蝕刻組成物,其優點在於,即使於濕式蝕刻後不追加實施乾式蝕刻,依然可以使用同一組成物,且僅以濕式製程將構成薄膜電晶體液晶顯示裝置之TFT的閘極線材料Mo/Al-Nd雙層膜,在沒有下部膜Al-Nd的底切現象下進行蝕刻,藉以獲得優良的斜面,並因而可以在後續製程時,防止在傾斜面發生斷線的不良情形,同時亦可防止在源極/汲極線材料之Mo單層膜發生逆斜面現象,從而可以防止上/下層發生短路的不良情形。另外,因為使用同一蝕刻組成物來應用於閘極線材料之Mo/Al-Nd雙層膜以及源極/汲極配線材料之Mo單一膜,所以不僅可以使製程單純化、設備的效率性增大以及成本節約,而且使蝕刻組成物的表張力降低,讓蝕刻組成物擴展良好,因而具有可以在大型基板使蝕刻均勻性增加的效果。
以下雖將揭示供用來理解本發明之較佳實施例,惟下述實施例並未超越作為本發明之例示用,本發明的範圍並不受限於下述實施例。
實施例1
將磷酸68重量%、硝酸5重量%、醋酸10重量%、[H+
]離子濃度調節劑KOH(Potassium Hudroxide)1重量%及餘量的水均勻混合以製造蝕刻組成物。
實施例2~4及比較例1~4
除了使用下表1所示的成分和組成比以外,以和前述實施例同樣的方法實施以製造蝕刻組成物。此時,下表1的單位為重量%。
以如下所述的方法評估在前述實施例1至4及比較例1至4所製造之蝕刻組成物的性能。
首先,於玻璃基板上形成Mo/Al-Nd雙層膜及Mo單層膜後,在塗覆光阻劑並透過顯影而形成圖案的試片上,噴上以前述實施例1至4及比較例1至4所製造的蝕刻組成物以進行蝕刻處理。接著,在蝕刻後,進行終點偵測(EPD,end point detection),利用30%與60%的過度蝕刻(over-etching)測定金屬配線的輪廓,其結果示於下列表2。
另外,將前述實施例1及比較例1的蝕刻組成物應用於Mo/Al-Nd雙層膜及Mo單層膜後,以掃描式電子顯微鏡(SEM,S-4100,日立公司)觀察斷面,其結果分別示於第1圖及第2圖。
從前述表2可以確認,依據本發明所製造的實施例1至4之蝕刻組成物和比較例1至4相比較,Mo/Al-Nd雙層膜與Mo及Mo單層膜全數顯示極佳的蝕刻效果。
另外,如第1圖之蝕刻斷面的掃描顯微鏡照片所示,可以確認在應用了根據本發明所製造之實施例1的蝕刻組成物之Mo/Al-Nd雙層膜並未發生底切現象,同時在Mo單層膜也形成了優良的輪廓。反之,當應用習知之蝕刻組成物的時係如第2圖所示,可以確認在Mo/Al-Nd雙層膜發生了底切現象,在Mo單層膜所形成的輪廓也不好。
第1圖將本發明之一實施例的蝕刻組成物適用於Mo/Al-Nd雙層膜及Mo單層膜的結果之照片。
第2圖將習知之蝕刻組成物適用於Mo/Al-Nd雙層膜及Mo單層膜的結果之照片。
Claims (4)
- 一種薄膜電晶體液晶顯示裝置之蝕刻組成物,包含:a)磷酸50至75重量%;b)硝酸1至15重量%;c)醋酸1至15重量%;d)陽離子係選自於由Li+ 、Na+ 、K+ 、Mg2+ 、Ca2+ 、Fe3+ 及Cu2+ 所組成的群之[H+ ]離子濃度調節劑0.1至5重量%;以及e)餘量的水。
- 如申請專利範圍第1項之薄膜電晶體液晶顯示裝置之蝕刻組成物,其中前述薄膜電晶體液晶顯示裝置為TFT LCD之閘極膜(Mo/Al-Nd雙層膜)。
- 如申請專利範圍第1項之薄膜電晶體液晶顯示裝置之蝕刻組成物,其中前述薄膜電晶體液晶顯示裝置為TFT LCD之源極/汲極膜(Mo單層膜)。
- 一種薄膜電晶體液晶顯示裝置之製造方法,包含以申請專利範圍第1項的蝕刻組成物實施蝕刻處理的階段。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040082378A KR101064626B1 (ko) | 2004-10-14 | 2004-10-14 | 박막트랜지스터 액정표시장치의 에칭 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200616233A TW200616233A (en) | 2006-05-16 |
TWI385804B true TWI385804B (zh) | 2013-02-11 |
Family
ID=36706861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094133525A TWI385804B (zh) | 2004-10-14 | 2005-09-27 | 薄膜電晶體液晶顯示裝置之蝕刻組成物(二) |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101064626B1 (zh) |
CN (1) | CN1760742A (zh) |
TW (1) | TWI385804B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170006480A (ko) | 2015-07-08 | 2017-01-18 | 동우 화인켐 주식회사 | 다층막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
CN115948746B (zh) * | 2022-12-30 | 2024-04-30 | 浙江奥首材料科技有限公司 | 一种Al/Mo蚀刻液、其制备方法与应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW560073B (en) * | 2001-05-18 | 2003-11-01 | Nec Lcd Technologies Ltd | Active matrix substrate for liquid crystal display and its fabrication |
TWI231275B (en) * | 2002-12-12 | 2005-04-21 | Lg Philips Lcd Co Ltd | Etching solution for multiple layer of copper and molybdenum and etching method using the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4074018B2 (ja) * | 1998-12-22 | 2008-04-09 | 東芝松下ディスプレイテクノロジー株式会社 | 薄膜のパターニング方法 |
TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
-
2004
- 2004-10-14 KR KR1020040082378A patent/KR101064626B1/ko active IP Right Grant
-
2005
- 2005-09-27 TW TW094133525A patent/TWI385804B/zh not_active IP Right Cessation
- 2005-10-14 CN CNA2005101128408A patent/CN1760742A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW560073B (en) * | 2001-05-18 | 2003-11-01 | Nec Lcd Technologies Ltd | Active matrix substrate for liquid crystal display and its fabrication |
TWI231275B (en) * | 2002-12-12 | 2005-04-21 | Lg Philips Lcd Co Ltd | Etching solution for multiple layer of copper and molybdenum and etching method using the same |
Also Published As
Publication number | Publication date |
---|---|
KR20060033334A (ko) | 2006-04-19 |
KR101064626B1 (ko) | 2011-09-15 |
TW200616233A (en) | 2006-05-16 |
CN1760742A (zh) | 2006-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI460309B (zh) | 薄膜電晶體液晶顯示裝置之蝕刻組成物 | |
KR101216651B1 (ko) | 에칭 조성물 | |
DE69724187T2 (de) | Suspension zum chemisch-mechanischen Polieren mit fluorierten Additiven und Verfahren zur Benutzung dieser Suspension | |
TWI431162B (zh) | 供用於圖案化薄膜電晶體-液晶裝置中之電路的蝕刻組成物 | |
TWI608126B (zh) | 含銅及鈦之金屬層用蝕刻液組成物 (1) | |
KR20110113902A (ko) | 박막 트랜지스터 액정표시장치용 식각조성물 | |
JP4864434B2 (ja) | 薄膜トランジスタ液晶表示装置用エッチング組成物 | |
KR101339316B1 (ko) | 유리 손상이 없는 구리 / 몰리브데늄막 또는 몰리브데늄 / 구리 / 몰리브데늄 3중 막의 식각 조성물 | |
TW201323660A (zh) | 蝕刻劑組合物及其用於製造薄膜電晶體之方法 | |
TWI385804B (zh) | 薄膜電晶體液晶顯示裝置之蝕刻組成物(二) | |
KR101173901B1 (ko) | 박막 트랜지스터 액정표시장치용 식각조성물 | |
TWI473910B (zh) | 用於薄膜電晶體-液晶顯示器之蝕刻劑 | |
KR101026983B1 (ko) | 박막트랜지스터 액정표시장치의 에칭 조성물 | |
TWI632254B (zh) | 用於金屬層的蝕刻劑組合物,用於使用該組合物蝕刻銅基金屬層的方法,用於製作用於液晶顯示裝置的陣列基板的方法及使用該方法製作的用於液晶顯示裝置的陣列基板 | |
TWI380451B (en) | Etching composition for tft lcd | |
JP2007142409A (ja) | 透明導電膜エッチング組成物 | |
KR20090061756A (ko) | 식각액 조성물 및 이를 이용한 금속 패턴의 형성 방법 | |
KR101236133B1 (ko) | 금속 식각액 조성물 | |
CN113652693A (zh) | 银薄膜蚀刻液组合物、使用该组合物的蚀刻方法及金属图案形成方法 | |
KR20110025378A (ko) | 금속막 식각용 조성물 | |
CN113637972A (zh) | 银薄膜蚀刻液组合物、使用该组合物的蚀刻方法及金属图案形成方法 | |
KR101461180B1 (ko) | 비과산화수소형 구리 에칭제 | |
KR20070062259A (ko) | 액정표시장치의 전극 식각용 식각액 조성물 | |
JP2009218601A (ja) | 薄膜トランジスタ液晶表示装置用エッチング組成物 | |
KR20110135841A (ko) | 금속 식각액 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |