JP5038657B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP5038657B2
JP5038657B2 JP2006174725A JP2006174725A JP5038657B2 JP 5038657 B2 JP5038657 B2 JP 5038657B2 JP 2006174725 A JP2006174725 A JP 2006174725A JP 2006174725 A JP2006174725 A JP 2006174725A JP 5038657 B2 JP5038657 B2 JP 5038657B2
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JP
Japan
Prior art keywords
data
port
input
control signal
period
Prior art date
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Expired - Fee Related
Application number
JP2006174725A
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English (en)
Japanese (ja)
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JP2008004218A5 (enExample
JP2008004218A (ja
Inventor
成亘 小松
雅直 山岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006174725A priority Critical patent/JP5038657B2/ja
Priority to US11/812,193 priority patent/US7616519B2/en
Publication of JP2008004218A publication Critical patent/JP2008004218A/ja
Publication of JP2008004218A5 publication Critical patent/JP2008004218A5/ja
Application granted granted Critical
Publication of JP5038657B2 publication Critical patent/JP5038657B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP2006174725A 2006-06-26 2006-06-26 半導体集積回路装置 Expired - Fee Related JP5038657B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006174725A JP5038657B2 (ja) 2006-06-26 2006-06-26 半導体集積回路装置
US11/812,193 US7616519B2 (en) 2006-06-26 2007-06-15 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006174725A JP5038657B2 (ja) 2006-06-26 2006-06-26 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2008004218A JP2008004218A (ja) 2008-01-10
JP2008004218A5 JP2008004218A5 (enExample) 2009-06-04
JP5038657B2 true JP5038657B2 (ja) 2012-10-03

Family

ID=38873435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006174725A Expired - Fee Related JP5038657B2 (ja) 2006-06-26 2006-06-26 半導体集積回路装置

Country Status (2)

Country Link
US (1) US7616519B2 (enExample)
JP (1) JP5038657B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010044821A (ja) * 2008-08-11 2010-02-25 Hitachi Ulsi Systems Co Ltd 半導体装置とメモリマクロ
JP5231190B2 (ja) * 2008-12-05 2013-07-10 株式会社日立超エル・エス・アイ・システムズ 半導体装置とメモリマクロ
US8934308B2 (en) 2011-10-14 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Tracking bit cell
US8806259B2 (en) * 2011-10-28 2014-08-12 Altera Corporation Time division multiplexed multiport memory implemented using single-port memory elements
KR101660611B1 (ko) 2012-01-30 2016-09-27 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 워드 시프트 정적 랜덤 액세스 메모리(ws-sram)
WO2013115778A1 (en) 2012-01-30 2013-08-08 Hewlett-Packard Development Company, L.P. Dynamic/static random access memory (d/sram)
US9230622B2 (en) 2012-11-30 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Simultaneous two/dual port access on 6T SRAM
US9601197B2 (en) 2014-03-10 2017-03-21 Kabushiki Kaisha Toshiba Memory system and control method
KR102512897B1 (ko) * 2018-01-11 2023-03-23 에스케이하이닉스 주식회사 반도체 장치와 그를 포함하는 반도체 시스템

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69034227T2 (de) * 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom-System mit Blocklöschung
US6463529B1 (en) * 1989-11-03 2002-10-08 Compaq Computer Corporation, Inc. Processor based system with system wide reset and partial system reset capabilities
JPH08212784A (ja) 1995-02-03 1996-08-20 Hitachi Ltd 多ポートメモリ装置
JP3892078B2 (ja) * 1996-05-08 2007-03-14 株式会社ルネサステクノロジ 半導体記憶装置
US5991221A (en) * 1998-01-30 1999-11-23 Hitachi, Ltd. Microcomputer and microprocessor having flash memory operable from single external power supply
JP2002526848A (ja) * 1998-09-25 2002-08-20 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ マルチポートメモリを含む装置
US6324103B2 (en) * 1998-11-11 2001-11-27 Hitachi, Ltd. Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device
JP4569915B2 (ja) * 2000-08-11 2010-10-27 エルピーダメモリ株式会社 半導体記憶装置
JP4488282B2 (ja) 2003-09-08 2010-06-23 株式会社日立超エル・エス・アイ・システムズ 半導体集積回路

Also Published As

Publication number Publication date
US20070297270A1 (en) 2007-12-27
US7616519B2 (en) 2009-11-10
JP2008004218A (ja) 2008-01-10

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