JP5033860B2 - 高速感度モデル計算のためのデルタtcc - Google Patents
高速感度モデル計算のためのデルタtcc Download PDFInfo
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- JP5033860B2 JP5033860B2 JP2009248812A JP2009248812A JP5033860B2 JP 5033860 B2 JP5033860 B2 JP 5033860B2 JP 2009248812 A JP2009248812 A JP 2009248812A JP 2009248812 A JP2009248812 A JP 2009248812A JP 5033860 B2 JP5033860 B2 JP 5033860B2
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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- Computer Hardware Design (AREA)
- Epidemiology (AREA)
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- Computer Networks & Wireless Communication (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
但し、λi(i=1,...,N)はN個の最大固有値を示し、φi(・)はTCC行列の対応する固有ベクトルを示す。(式2)はまさにすべてのカーネルが固有級数展開(Eigen series expansion)に保持される場合であり、すなわち、NがTCC行列のランクに等しい場合であることは注目に値する。しかし、実際の適用例では、計算プロセスの速度を上げるためにより小さいN(すなわち、n)を選択することによりこの級数を切り捨てることが典型的である。固有級数に保持されるカーネル数が多いほど、計算量が多くなるという犠牲を払って、より高い正確さが保持される。一般に、対角化動作以前のTCC行列は「生」のTCC行列と呼ぶことができ、以下「rawTCC」と示す。
−投影ビームPBの放射を供給するための放射システムEx、IL。この特定のケースでは放射システムは放射源LAも含む。
−パターニングデバイス(例えば、マスク)MA(例えば、レチクル)を保持するためのマスクホルダが設けられ、アイテムPLに対してマスクを正確に位置決めするための第1の位置決め装置に接続された第1のオブジェクトテーブル(パターニングデバイスサポート又はマスクテーブル)MT
−基板W(例えば、レジストコーティングシリコンウェーハ)を保持するための基板ホルダが設けられ、アイテムPLに対して基板を正確に位置決めするための第2の位置決め装置に接続された第2のオブジェクトテーブル(基板テーブル)WT
−マスクMAの照射部分を基板Wのターゲット部分C(例えば、1つ又は複数のダイを含む)上に結像するための投影システム(「レンズ」)PL(例えば、屈折、反射、又は反射屈折光学システム)
−ステップモードでは、パターニングデバイスサポート(例えば、マスクテーブル)MTは本質的に静止状態に保持され、マスクイメージ全体が一度に(すなわち、単一「フラッシュ」で)ターゲット部分Cに投影される。次に、異なるターゲット部分CをビームPBで照射できるように、基板テーブルWTがx方向及び/又はy方向にシフトする。
−スキャンモードでは、所与のターゲット部分Cが単一「フラッシュ」で露光されないことを除いて、本質的に同じシナリオが適用される。その代わりに、パターニングデバイスサポート(例えば、マスクテーブル)MTは速度vで所与の方向(いわゆる「スキャン方向」、例えば、y方向)に移動可能であり、従って、投影ビームPBはマスクイメージの上をスキャンするようになり、同時に、基板テーブルWTは速度V=Mvで同じ方向又は反対方向に同時に移動し、MはレンズPLの倍率である(典型的に、M=1/4又は1/5)。このように、解像度について妥協する必要なしに、相対的に大きいターゲット部分Cを露光することができる。
Claims (11)
- パターンの基準イメージと追加イメージとの差を決定するための方法であって、基準結像関数を決定すること、前記基準結像関数と追加結像関数との差を表す差分関数のパラメータを決定すること、前記差分関数及び前記決定されたパラメータに基づいて前記パターンの前記基準イメージと前記追加イメージとの差を計算することを含み、
さらに、前記差分関数の項の少なくとも一部を固有関数及び対応する固有値で表すこと、及び、前記固有値に基づいて固有関数及び固有値を無視することによって簡易差分関数を決定することを含む、方法。 - 前記基準結像関数及び前記差分関数に基づいて前記追加結像関数を決定することを含む、請求項1記載の方法。
- 前記追加結像関数が、前記基準結像関数と前記差分関数を連結させることによって決定される、請求項2記載の方法。
- 前記パターンの前記基準イメージと前記追加イメージとの前記差を計算することが、前記パターンの前記基準イメージと前記追加イメージとの像強度の差を決定することを含む、請求項1〜3のいずれかに記載の方法。
- 前記パターンの前記基準イメージと前記追加イメージとの前記差を計算することが、前記基準イメージ及び前記追加イメージにおけるクリティカルディメンションの測定間の差を決定することをさらに含む、請求項4記載の方法。
- 前記簡易差分関数が300個未満の固有値又は100個未満の固有値を含む、請求項1記載の方法。
- 前記基準イメージが、基準条件下の基準光学システムによって形成された前記パターンのイメージをモデリングし、前記追加イメージが、追加光学システムによって形成された、又は追加条件下の前記基準光学システムによって形成された、又は改良基準光学システムによって形成された前記パターンのイメージをモデリングする、請求項1〜6のいずれかに記載の方法。
- 前記追加光学システム、前記基準光学システム、又は前記改良基準光学システムの前記条件を変更することによって前記基準イメージと前記追加イメージとの前記差を減少させることを含む、請求項7記載の方法。
- 前記基準光学システムがリソグラフィ露光装置の投影システムである、請求項8記載の方法。
- 機械実行可能命令を有するコンピュータプログラムであって、前記命令が、請求項1〜9のいずれか1項に記載されたマスクパターンのイメージの変化を決定するための方法を実行するようにコンピュータシステムによって実行される、コンピュータプログラム。
- 請求項10記載のプログラムを格納するコンピュータ可読記憶媒体。
Applications Claiming Priority (4)
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US11302408P | 2008-11-10 | 2008-11-10 | |
US61/113,024 | 2008-11-10 | ||
PCT/US2009/049792 WO2010005957A1 (en) | 2008-07-07 | 2009-07-07 | Illumination optimization |
WOPCT/US2009/049792 | 2009-07-07 |
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JP2010118655A JP2010118655A (ja) | 2010-05-27 |
JP5033860B2 true JP5033860B2 (ja) | 2012-09-26 |
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JP2009248677A Expired - Fee Related JP5033859B2 (ja) | 2008-11-10 | 2009-10-29 | モデルベースの汎用マッチング及びチューニングのための方法及びシステム |
JP2009248812A Active JP5033860B2 (ja) | 2008-11-10 | 2009-10-29 | 高速感度モデル計算のためのデルタtcc |
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JP (2) | JP5033859B2 (ja) |
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2009
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Also Published As
Publication number | Publication date |
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JP2010114443A (ja) | 2010-05-20 |
US20130263064A1 (en) | 2013-10-03 |
US10169522B2 (en) | 2019-01-01 |
US8893058B2 (en) | 2014-11-18 |
US8443307B2 (en) | 2013-05-14 |
JP2010118655A (ja) | 2010-05-27 |
US20100260427A1 (en) | 2010-10-14 |
US20150074619A1 (en) | 2015-03-12 |
US20100146475A1 (en) | 2010-06-10 |
CN101846886B (zh) | 2013-01-09 |
NL2003719A (en) | 2010-05-11 |
US8379991B2 (en) | 2013-02-19 |
CN101846886A (zh) | 2010-09-29 |
NL2003729A (en) | 2011-01-10 |
NL2003718A (en) | 2010-05-11 |
JP5033859B2 (ja) | 2012-09-26 |
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