JP5031252B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5031252B2
JP5031252B2 JP2006092908A JP2006092908A JP5031252B2 JP 5031252 B2 JP5031252 B2 JP 5031252B2 JP 2006092908 A JP2006092908 A JP 2006092908A JP 2006092908 A JP2006092908 A JP 2006092908A JP 5031252 B2 JP5031252 B2 JP 5031252B2
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JP
Japan
Prior art keywords
frequency
electrode
plasma
inductor
processing
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JP2006092908A
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English (en)
Japanese (ja)
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JP2007266533A (ja
JP2007266533A5 (enExample
Inventor
直樹 松本
地塩 輿水
欣延 早川
秀敏 花岡
学 岩田
諭志 田中
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006092908A priority Critical patent/JP5031252B2/ja
Priority to KR1020070030756A priority patent/KR100926380B1/ko
Priority to TW096111087A priority patent/TWI431683B/zh
Priority to US11/694,153 priority patent/US8138445B2/en
Priority to CNA2007100913503A priority patent/CN101047114A/zh
Priority to EP07006722.8A priority patent/EP1840937B1/en
Priority to CN2009101750875A priority patent/CN101661863B/zh
Publication of JP2007266533A publication Critical patent/JP2007266533A/ja
Publication of JP2007266533A5 publication Critical patent/JP2007266533A5/ja
Priority to US13/403,588 priority patent/US8513563B2/en
Application granted granted Critical
Publication of JP5031252B2 publication Critical patent/JP5031252B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2006092908A 2006-03-30 2006-03-30 プラズマ処理装置 Active JP5031252B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006092908A JP5031252B2 (ja) 2006-03-30 2006-03-30 プラズマ処理装置
TW096111087A TWI431683B (zh) 2006-03-30 2007-03-29 Plasma processing device and plasma processing method
KR1020070030756A KR100926380B1 (ko) 2006-03-30 2007-03-29 플라즈마 처리 장치 및 플라즈마 처리 방법
CNA2007100913503A CN101047114A (zh) 2006-03-30 2007-03-30 等离子体处理装置和等离子体处理方法
US11/694,153 US8138445B2 (en) 2006-03-30 2007-03-30 Plasma processing apparatus and plasma processing method
EP07006722.8A EP1840937B1 (en) 2006-03-30 2007-03-30 Plasma processing apparatus and plasma processing method
CN2009101750875A CN101661863B (zh) 2006-03-30 2007-03-30 等离子体处理装置和等离子体处理方法
US13/403,588 US8513563B2 (en) 2006-03-30 2012-02-23 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006092908A JP5031252B2 (ja) 2006-03-30 2006-03-30 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2007266533A JP2007266533A (ja) 2007-10-11
JP2007266533A5 JP2007266533A5 (enExample) 2009-04-02
JP5031252B2 true JP5031252B2 (ja) 2012-09-19

Family

ID=38121789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006092908A Active JP5031252B2 (ja) 2006-03-30 2006-03-30 プラズマ処理装置

Country Status (5)

Country Link
EP (1) EP1840937B1 (enExample)
JP (1) JP5031252B2 (enExample)
KR (1) KR100926380B1 (enExample)
CN (2) CN101047114A (enExample)
TW (1) TWI431683B (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5371238B2 (ja) * 2007-12-20 2013-12-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP4898718B2 (ja) * 2008-02-08 2012-03-21 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
KR101592623B1 (ko) * 2008-12-10 2016-02-11 램 리써치 코포레이션 실리콘 전극 세척용 이머시브 산화 및 에칭 프로세스
US9887069B2 (en) * 2008-12-19 2018-02-06 Lam Research Corporation Controlling ion energy distribution in plasma processing systems
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
JP5591573B2 (ja) * 2009-03-30 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101173293B1 (ko) * 2009-12-31 2012-08-13 엘아이지에이디피 주식회사 기판 처리 장치의 벽면 에너지 손실 저감 장치
US9174296B2 (en) * 2010-10-20 2015-11-03 Lam Research Corporation Plasma ignition and sustaining methods and apparatuses
TWI646869B (zh) 2011-10-05 2019-01-01 美商應用材料股份有限公司 對稱電漿處理腔室
US8872525B2 (en) * 2011-11-21 2014-10-28 Lam Research Corporation System, method and apparatus for detecting DC bias in a plasma processing chamber
JP6018757B2 (ja) 2012-01-18 2016-11-02 東京エレクトロン株式会社 基板処理装置
JP6009171B2 (ja) 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Ｊｃｕ プラズマ処理装置及び方法
JP5906444B2 (ja) 2013-05-14 2016-04-20 パナソニックＩｐマネジメント株式会社 液体処理装置、液体処理方法及びプラズマ処理液
JP6584329B2 (ja) * 2016-01-19 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置
CN107305830B (zh) * 2016-04-20 2020-02-11 中微半导体设备(上海)股份有限公司 电容耦合等离子体处理装置与等离子体处理方法
JP6902450B2 (ja) * 2017-10-10 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法
KR101990577B1 (ko) * 2017-12-22 2019-06-18 인베니아 주식회사 필드 조절 유닛 및 이를 포함하는 플라즈마 처리장치
KR101979223B1 (ko) * 2017-12-22 2019-05-17 인베니아 주식회사 플라즈마 처리장치
TW202013581A (zh) * 2018-05-23 2020-04-01 日商東京威力科創股份有限公司 電漿處理裝置
JP7306886B2 (ja) * 2018-07-30 2023-07-11 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
CN111199860A (zh) 2018-11-20 2020-05-26 江苏鲁汶仪器有限公司 一种刻蚀均匀性调节装置及方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
US11189517B2 (en) * 2019-04-26 2021-11-30 Applied Materials, Inc. RF electrostatic chuck filter circuit
CN110379701A (zh) * 2019-07-24 2019-10-25 沈阳拓荆科技有限公司 具有可调射频组件的晶圆支撑座
JP7641972B2 (ja) * 2020-02-04 2025-03-07 ラム リサーチ コーポレーション プラズマ処理システムのためのｒｆ信号フィルタ構成
CN113936985B (zh) * 2020-07-14 2025-03-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
WO2022202702A1 (ja) * 2021-03-24 2022-09-29 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
CN117448756A (zh) * 2022-07-19 2024-01-26 友威科技股份有限公司 具升降式电极的连续电浆制程系统
CN115607263B (zh) * 2022-09-30 2023-07-11 邦士医疗科技股份有限公司 一种等离子射频手术系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
JP3905870B2 (ja) * 2003-08-01 2007-04-18 東京エレクトロン株式会社 プラズマ処理装置
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20060037704A1 (en) 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method

Also Published As

Publication number Publication date
JP2007266533A (ja) 2007-10-11
KR20070098643A (ko) 2007-10-05
EP1840937B1 (en) 2014-05-07
KR100926380B1 (ko) 2009-11-11
EP1840937A1 (en) 2007-10-03
CN101661863B (zh) 2013-05-29
CN101661863A (zh) 2010-03-03
TWI431683B (zh) 2014-03-21
TW200802598A (en) 2008-01-01
CN101047114A (zh) 2007-10-03

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